JP3938284B2 - 強磁性ＧａＮ系混晶化合物及びその強磁性特性の調整方法 - Google Patents

強磁性ＧａＮ系混晶化合物及びその強磁性特性の調整方法 Download PDF

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JP3938284B2
JP3938284B2 JP2001059303A JP2001059303A JP3938284B2 JP 3938284 B2 JP3938284 B2 JP 3938284B2 JP 2001059303 A JP2001059303 A JP 2001059303A JP 2001059303 A JP2001059303 A JP 2001059303A JP 3938284 B2 JP3938284 B2 JP 3938284B2
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Prior art keywords
ferromagnetic
gan
transition metal
metal element
mixed crystal
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JP2001059303A
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Japanese (ja)
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JP2002260922A5 (enExample
JP2002260922A (ja
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博 吉田
和則 佐藤
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Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
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Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
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Priority to JP2001059303A priority Critical patent/JP3938284B2/ja
Application filed by Japan Science and Technology Agency, National Institute of Japan Science and Technology Agency filed Critical Japan Science and Technology Agency
Priority to KR10-2003-7011104A priority patent/KR100531514B1/ko
Priority to CNB028058283A priority patent/CN1313656C/zh
Priority to US10/468,833 priority patent/US20040112278A1/en
Priority to EP02701657A priority patent/EP1367151A1/en
Priority to PCT/JP2002/001889 priority patent/WO2002070793A1/ja
Priority to TW091103879A priority patent/TWI254088B/zh
Publication of JP2002260922A publication Critical patent/JP2002260922A/ja
Publication of JP2002260922A5 publication Critical patent/JP2002260922A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
    • H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
    • H01F1/404—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of III-V type, e.g. In1-x Mnx As
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0009—Antiferromagnetic materials, i.e. materials exhibiting a Néel transition temperature

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
JP2001059303A 2001-03-02 2001-03-02 強磁性ＧａＮ系混晶化合物及びその強磁性特性の調整方法 Expired - Fee Related JP3938284B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001059303A JP3938284B2 (ja) 2001-03-02 2001-03-02 強磁性ＧａＮ系混晶化合物及びその強磁性特性の調整方法
CNB028058283A CN1313656C (zh) 2001-03-02 2002-02-28 Ⅱ－ⅵ族或ⅲ－ⅴ族系单结晶铁磁性化合物及其铁磁性特性的调整方法
US10/468,833 US20040112278A1 (en) 2001-03-02 2002-02-28 II-IV group or III-V compound based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics
EP02701657A EP1367151A1 (en) 2001-03-02 2002-02-28 Ii-vi group or iii-v group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics
KR10-2003-7011104A KR100531514B1 (ko) 2001-03-02 2002-02-28 Ⅱ-ⅵ족 또는 ⅲ-ⅴ족계 단결정(單結晶) 강자성(强磁性)산화물및 그 강자성 특성의 조정방법
PCT/JP2002/001889 WO2002070793A1 (fr) 2001-03-02 2002-02-28 Compose ferromagnetique monocristallin sur la base du groupe ii-vi ou du groupe iii-v et procede pour adapter ses caracteristiques ferromagnetiques
TW091103879A TWI254088B (en) 2001-03-02 2002-03-01 Single crystalline ferromagnetic compounds of II-VI group or III-V group and the adjustment method of their ferromagnetic properties

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001059303A JP3938284B2 (ja) 2001-03-02 2001-03-02 強磁性ＧａＮ系混晶化合物及びその強磁性特性の調整方法

Publications (3)

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JP2002260922A JP2002260922A (ja) 2002-09-13
JP2002260922A5 JP2002260922A5 (enExample) 2004-08-12
JP3938284B2 true JP3938284B2 (ja) 2007-06-27

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JP2001059303A Expired - Fee Related JP3938284B2 (ja) 2001-03-02 2001-03-02 強磁性ＧａＮ系混晶化合物及びその強磁性特性の調整方法

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3979138B2 (ja) * 2001-12-20 2007-09-19 住友電気工業株式会社 光アイソレータおよび偏光子
JP2005183947A (ja) * 2003-11-26 2005-07-07 Ricoh Co Ltd Ｉｉｉ族窒化物の結晶成長方法およびｉｉｉ族窒化物結晶およびｉｉｉ族窒化物半導体デバイスおよび発光デバイス
JPWO2006028299A1 (ja) * 2004-09-10 2008-05-08 国立大学法人大阪大学 反強磁性ハーフメタリック半導体及びその製造方法
EP2549546A4 (en) * 2010-03-18 2017-08-23 National University Corporation Kyoto Institute of Technology Light-absorbing material and photoelectric conversion element using same

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