JP2002260922A5 - - Google Patents

Download PDF

Info

Publication number
JP2002260922A5
JP2002260922A5 JP2001059303A JP2001059303A JP2002260922A5 JP 2002260922 A5 JP2002260922 A5 JP 2002260922A5 JP 2001059303 A JP2001059303 A JP 2001059303A JP 2001059303 A JP2001059303 A JP 2001059303A JP 2002260922 A5 JP2002260922 A5 JP 2002260922A5
Authority
JP
Japan
Prior art keywords
group
iii
nitride
inn
aln
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001059303A
Other languages
English (en)
Japanese (ja)
Other versions
JP3938284B2 (ja
JP2002260922A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2001059303A external-priority patent/JP3938284B2/ja
Priority to JP2001059303A priority Critical patent/JP3938284B2/ja
Priority to KR10-2003-7011104A priority patent/KR100531514B1/ko
Priority to US10/468,833 priority patent/US20040112278A1/en
Priority to EP02701657A priority patent/EP1367151A1/en
Priority to CNB028058283A priority patent/CN1313656C/zh
Priority to PCT/JP2002/001889 priority patent/WO2002070793A1/ja
Priority to TW091103879A priority patent/TWI254088B/zh
Publication of JP2002260922A publication Critical patent/JP2002260922A/ja
Publication of JP2002260922A5 publication Critical patent/JP2002260922A5/ja
Publication of JP3938284B2 publication Critical patent/JP3938284B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2001059303A 2001-03-02 2001-03-02 強磁性ＧａＮ系混晶化合物及びその強磁性特性の調整方法 Expired - Fee Related JP3938284B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001059303A JP3938284B2 (ja) 2001-03-02 2001-03-02 強磁性ＧａＮ系混晶化合物及びその強磁性特性の調整方法
CNB028058283A CN1313656C (zh) 2001-03-02 2002-02-28 Ⅱ－ⅵ族或ⅲ－ⅴ族系单结晶铁磁性化合物及其铁磁性特性的调整方法
US10/468,833 US20040112278A1 (en) 2001-03-02 2002-02-28 II-IV group or III-V compound based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics
EP02701657A EP1367151A1 (en) 2001-03-02 2002-02-28 Ii-vi group or iii-v group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics
KR10-2003-7011104A KR100531514B1 (ko) 2001-03-02 2002-02-28 Ⅱ-ⅵ족 또는 ⅲ-ⅴ족계 단결정(單結晶) 강자성(强磁性)산화물및 그 강자성 특성의 조정방법
PCT/JP2002/001889 WO2002070793A1 (fr) 2001-03-02 2002-02-28 Compose ferromagnetique monocristallin sur la base du groupe ii-vi ou du groupe iii-v et procede pour adapter ses caracteristiques ferromagnetiques
TW091103879A TWI254088B (en) 2001-03-02 2002-03-01 Single crystalline ferromagnetic compounds of II-VI group or III-V group and the adjustment method of their ferromagnetic properties

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001059303A JP3938284B2 (ja) 2001-03-02 2001-03-02 強磁性ＧａＮ系混晶化合物及びその強磁性特性の調整方法

Publications (3)

Publication Number Publication Date
JP2002260922A JP2002260922A (ja) 2002-09-13
JP2002260922A5 true JP2002260922A5 (enExample) 2004-08-12
JP3938284B2 JP3938284B2 (ja) 2007-06-27

Family

ID=18918884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001059303A Expired - Fee Related JP3938284B2 (ja) 2001-03-02 2001-03-02 強磁性ＧａＮ系混晶化合物及びその強磁性特性の調整方法

Country Status (1)

Country Link
JP (1) JP3938284B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3979138B2 (ja) * 2001-12-20 2007-09-19 住友電気工業株式会社 光アイソレータおよび偏光子
JP2005183947A (ja) * 2003-11-26 2005-07-07 Ricoh Co Ltd Ｉｉｉ族窒化物の結晶成長方法およびｉｉｉ族窒化物結晶およびｉｉｉ族窒化物半導体デバイスおよび発光デバイス
JPWO2006028299A1 (ja) * 2004-09-10 2008-05-08 国立大学法人大阪大学 反強磁性ハーフメタリック半導体及びその製造方法
EP2549546A4 (en) * 2010-03-18 2017-08-23 National University Corporation Kyoto Institute of Technology Light-absorbing material and photoelectric conversion element using same

Similar Documents

Publication Publication Date Title
EP1698714A3 (en) Target used to form a hard film
WO2002093591A3 (en) Iron-based rare earth alloy nanocomposite magnet and method for producing the same
NL300390I1 (en) Anti-IL-12 antibodies, compositions, methods and uses.
DE60136652D1 (de) Eisen-cobalt-vanadium-legierung
PT1415311E (pt) Utilização de um material para refrigeração magnética e processo para a sua fabricação
WO2005002469A3 (en) Annuloplasty chain
GEP20084399B (en) Crystal forms of azithromycin
USD446161S1 (en) Ornamental knot
EP1174525A3 (en) Thin film, method for manufacturing thin film, and electronic component
WO2002087031A3 (en) Multi-level closed loop resonators and method for fabricating same
TW200520265A (en) Group-III nitride semiconductor device
JP2002260922A5 (enExample)
USD530150S1 (en) Stemware
GB2420118B (en) A trimethylgallium, a method for producing the same and a gallium nitride thin film grown from the trimethylgallium
JP2002255695A5 (enExample)
MXPA03009318A (es) Ligandos de integrina alfa v beta 6.
USD495033S1 (en) Faucet
Tomkovich et al. Ringing and migratory links of Taimyr waders
USD445514S1 (en) Hook tape screening repair patch
WO2006065734A3 (en) Fish hook and related methods
USD470070S1 (en) Watchback
EP1283176A3 (en) Metal band
EP1710613A4 (en) POLYGONAL MIRROR AND MOLD FOR MOLDING A POLYGON MIRROR sb / sb
ATE397572T1 (de) Verflüssigende zusammensetzung
EP1245701A3 (en) A method of fabricating a Group III nitride film