JP2002260922A5 - - Google Patents

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Publication number
JP2002260922A5
JP2002260922A5 JP2001059303A JP2001059303A JP2002260922A5 JP 2002260922 A5 JP2002260922 A5 JP 2002260922A5 JP 2001059303 A JP2001059303 A JP 2001059303A JP 2001059303 A JP2001059303 A JP 2001059303A JP 2002260922 A5 JP2002260922 A5 JP 2002260922A5
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JP
Japan
Prior art keywords
group
iii
nitride
inn
aln
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2001059303A
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Japanese (ja)
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JP2002260922A (en
JP3938284B2 (en
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Publication date
Application filed filed Critical
Priority claimed from JP2001059303A external-priority patent/JP3938284B2/en
Priority to JP2001059303A priority Critical patent/JP3938284B2/en
Priority to PCT/JP2002/001889 priority patent/WO2002070793A1/en
Priority to US10/468,833 priority patent/US20040112278A1/en
Priority to EP02701657A priority patent/EP1367151A1/en
Priority to CNB028058283A priority patent/CN1313656C/en
Priority to KR10-2003-7011104A priority patent/KR100531514B1/en
Priority to TW091103879A priority patent/TWI254088B/en
Publication of JP2002260922A publication Critical patent/JP2002260922A/en
Publication of JP2002260922A5 publication Critical patent/JP2002260922A5/ja
Publication of JP3938284B2 publication Critical patent/JP3938284B2/en
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Claims (1)

ＧａＮ， ＡｌＮ， ＩｎＮ，またはＢＮよりなる群から選ばれるＩＩＩ−Ｖ族系窒化物において、Ｖ， Ｃｒ，またはＭｎよりなる群から選ばれる少なくとも１種の遷移金属がＩＩＩ族元素を置換して混晶を形成してなることを特徴とする単結晶強磁性ＩＩＩ−Ｖ族系窒化物。In a group III-V nitride selected from the group consisting of GaN, AlN, InN, or BN, at least one transition metal selected from the group consisting of V, Cr, or Mn replaces the group III element and is mixed. A single crystal ferromagnetic III- V group nitride characterized by forming crystals.
JP2001059303A 2001-03-02 2001-03-02 Ferromagnetic GaN-based mixed crystal compound and method for adjusting the ferromagnetic properties thereof Expired - Fee Related JP3938284B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001059303A JP3938284B2 (en) 2001-03-02 2001-03-02 Ferromagnetic GaN-based mixed crystal compound and method for adjusting the ferromagnetic properties thereof
CNB028058283A CN1313656C (en) 2001-03-02 2002-02-28 II-VI group or III-V group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics
US10/468,833 US20040112278A1 (en) 2001-03-02 2002-02-28 II-IV group or III-V compound based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics
EP02701657A EP1367151A1 (en) 2001-03-02 2002-02-28 Ii-vi group or iii-v group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics
PCT/JP2002/001889 WO2002070793A1 (en) 2001-03-02 2002-02-28 Ii-vi group or iii-v group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics
KR10-2003-7011104A KR100531514B1 (en) 2001-03-02 2002-02-28 Ⅱ-Ⅵ group or Ⅲ-Ⅴ group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics
TW091103879A TWI254088B (en) 2001-03-02 2002-03-01 Single crystalline ferromagnetic compounds of II-VI group or III-V group and the adjustment method of their ferromagnetic properties

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001059303A JP3938284B2 (en) 2001-03-02 2001-03-02 Ferromagnetic GaN-based mixed crystal compound and method for adjusting the ferromagnetic properties thereof

Publications (3)

Publication Number Publication Date
JP2002260922A JP2002260922A (en) 2002-09-13
JP2002260922A5 true JP2002260922A5 (en) 2004-08-12
JP3938284B2 JP3938284B2 (en) 2007-06-27

Family

ID=18918884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001059303A Expired - Fee Related JP3938284B2 (en) 2001-03-02 2001-03-02 Ferromagnetic GaN-based mixed crystal compound and method for adjusting the ferromagnetic properties thereof

Country Status (1)

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JP (1) JP3938284B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3979138B2 (en) * 2001-12-20 2007-09-19 住友電気工業株式会社 Optical isolator and polarizer
JP2005183947A (en) * 2003-11-26 2005-07-07 Ricoh Co Ltd Method for growing group iii nitride crystal, group iii nitride crystal, group iii nitride semiconductor device, and light emitting device
US7790585B2 (en) * 2004-09-10 2010-09-07 Osaka University Antiferromagnetic half-metallic semiconductor and manufacturing method therefor
US20130008508A1 (en) * 2010-03-18 2013-01-10 National University Corporation Kyoto Institute Of Technology Light absorbing material and photoelectric conversion element

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