JP2002255695A5 - - Google Patents

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Publication number
JP2002255695A5
JP2002255695A5 JP2001059195A JP2001059195A JP2002255695A5 JP 2002255695 A5 JP2002255695 A5 JP 2002255695A5 JP 2001059195 A JP2001059195 A JP 2001059195A JP 2001059195 A JP2001059195 A JP 2001059195A JP 2002255695 A5 JP2002255695 A5 JP 2002255695A5
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JP
Japan
Prior art keywords
group
group iii
compound
inas
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001059195A
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Japanese (ja)
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JP3989182B2 (en
JP2002255695A (en
Filing date
Publication date
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Priority claimed from JP2001059195A external-priority patent/JP3989182B2/en
Priority to JP2001059195A priority Critical patent/JP3989182B2/en
Priority to PCT/JP2002/001889 priority patent/WO2002070793A1/en
Priority to US10/468,833 priority patent/US20040112278A1/en
Priority to CNB028058283A priority patent/CN1313656C/en
Priority to EP02701657A priority patent/EP1367151A1/en
Priority to KR10-2003-7011104A priority patent/KR100531514B1/en
Priority to TW091103879A priority patent/TWI254088B/en
Publication of JP2002255695A publication Critical patent/JP2002255695A/en
Publication of JP2002255695A5 publication Critical patent/JP2002255695A5/ja
Publication of JP3989182B2 publication Critical patent/JP3989182B2/en
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Claims (1)

GaAs,InAs,InP,またはGaPよりなる群から選ばれるIII−V族系化合物において、VまたはCrよりなる群から選ばれる少なくとも1種の遷移金属がIII族元素を置換して混晶を形成してなることを特徴とする単結晶強磁性III−V族系化合物。In a group III-V compound selected from the group consisting of GaAs, InAs, InP, and GaP, at least one transition metal selected from the group consisting of V or Cr replaces a group III element to form a mixed crystal. A single crystal ferromagnetic group III- V compound, characterized by comprising:
JP2001059195A 2001-03-02 2001-03-02 Ferromagnetic III-V compound and method for adjusting ferromagnetic properties thereof Expired - Fee Related JP3989182B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001059195A JP3989182B2 (en) 2001-03-02 2001-03-02 Ferromagnetic III-V compound and method for adjusting ferromagnetic properties thereof
EP02701657A EP1367151A1 (en) 2001-03-02 2002-02-28 Ii-vi group or iii-v group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics
US10/468,833 US20040112278A1 (en) 2001-03-02 2002-02-28 II-IV group or III-V compound based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics
CNB028058283A CN1313656C (en) 2001-03-02 2002-02-28 II-VI group or III-V group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics
PCT/JP2002/001889 WO2002070793A1 (en) 2001-03-02 2002-02-28 Ii-vi group or iii-v group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics
KR10-2003-7011104A KR100531514B1 (en) 2001-03-02 2002-02-28 Ⅱ-Ⅵ group or Ⅲ-Ⅴ group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics
TW091103879A TWI254088B (en) 2001-03-02 2002-03-01 Single crystalline ferromagnetic compounds of II-VI group or III-V group and the adjustment method of their ferromagnetic properties

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001059195A JP3989182B2 (en) 2001-03-02 2001-03-02 Ferromagnetic III-V compound and method for adjusting ferromagnetic properties thereof

Publications (3)

Publication Number Publication Date
JP2002255695A JP2002255695A (en) 2002-09-11
JP2002255695A5 true JP2002255695A5 (en) 2004-08-12
JP3989182B2 JP3989182B2 (en) 2007-10-10

Family

ID=18918794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001059195A Expired - Fee Related JP3989182B2 (en) 2001-03-02 2001-03-02 Ferromagnetic III-V compound and method for adjusting ferromagnetic properties thereof

Country Status (1)

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JP (1) JP3989182B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006028299A1 (en) * 2004-09-10 2006-03-16 Osaka University Antiferromagnetic half metallic semiconductor and method for forming the same
KR100666729B1 (en) 2005-07-11 2007-01-09 한국과학기술연구원 Method for manufacturing room temperature nanobelts zns ferromagnetic semiconductor
CN101710524B (en) * 2009-12-02 2011-08-17 中国科学院半导体研究所 Method for preparing InAs room-temperature ferro magnetic semiconductor material
CN110620176A (en) * 2019-08-30 2019-12-27 松山湖材料实验室 Method for preparing magnetic semiconductor epitaxial film and product thereof

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