JP2002255695A5 - - Google Patents
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- Publication number
- JP2002255695A5 JP2002255695A5 JP2001059195A JP2001059195A JP2002255695A5 JP 2002255695 A5 JP2002255695 A5 JP 2002255695A5 JP 2001059195 A JP2001059195 A JP 2001059195A JP 2001059195 A JP2001059195 A JP 2001059195A JP 2002255695 A5 JP2002255695 A5 JP 2002255695A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- group iii
- compound
- inas
- inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 150000001875 compounds Chemical class 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 1
- 230000005294 ferromagnetic Effects 0.000 claims 1
- 229910052723 transition metal Inorganic materials 0.000 claims 1
- 150000003624 transition metals Chemical class 0.000 claims 1
Claims (1)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001059195A JP3989182B2 (en) | 2001-03-02 | 2001-03-02 | Ferromagnetic III-V compound and method for adjusting ferromagnetic properties thereof |
EP02701657A EP1367151A1 (en) | 2001-03-02 | 2002-02-28 | Ii-vi group or iii-v group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics |
US10/468,833 US20040112278A1 (en) | 2001-03-02 | 2002-02-28 | II-IV group or III-V compound based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics |
CNB028058283A CN1313656C (en) | 2001-03-02 | 2002-02-28 | II-VI group or III-V group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics |
PCT/JP2002/001889 WO2002070793A1 (en) | 2001-03-02 | 2002-02-28 | Ii-vi group or iii-v group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics |
KR10-2003-7011104A KR100531514B1 (en) | 2001-03-02 | 2002-02-28 | Ⅱ-Ⅵ group or Ⅲ-Ⅴ group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics |
TW091103879A TWI254088B (en) | 2001-03-02 | 2002-03-01 | Single crystalline ferromagnetic compounds of II-VI group or III-V group and the adjustment method of their ferromagnetic properties |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001059195A JP3989182B2 (en) | 2001-03-02 | 2001-03-02 | Ferromagnetic III-V compound and method for adjusting ferromagnetic properties thereof |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2002255695A JP2002255695A (en) | 2002-09-11 |
JP2002255695A5 true JP2002255695A5 (en) | 2004-08-12 |
JP3989182B2 JP3989182B2 (en) | 2007-10-10 |
Family
ID=18918794
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001059195A Expired - Fee Related JP3989182B2 (en) | 2001-03-02 | 2001-03-02 | Ferromagnetic III-V compound and method for adjusting ferromagnetic properties thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3989182B2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006028299A1 (en) * | 2004-09-10 | 2006-03-16 | Osaka University | Antiferromagnetic half metallic semiconductor and method for forming the same |
KR100666729B1 (en) | 2005-07-11 | 2007-01-09 | 한국과학기술연구원 | Method for manufacturing room temperature nanobelts zns ferromagnetic semiconductor |
CN101710524B (en) * | 2009-12-02 | 2011-08-17 | 中国科学院半导体研究所 | Method for preparing InAs room-temperature ferro magnetic semiconductor material |
CN110620176A (en) * | 2019-08-30 | 2019-12-27 | 松山湖材料实验室 | Method for preparing magnetic semiconductor epitaxial film and product thereof |
-
2001
- 2001-03-02 JP JP2001059195A patent/JP3989182B2/en not_active Expired - Fee Related
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