JP3936996B2 - 単結晶窒化ガリウムの製造方法 - Google Patents
単結晶窒化ガリウムの製造方法 Download PDFInfo
- Publication number
- JP3936996B2 JP3936996B2 JP2003281481A JP2003281481A JP3936996B2 JP 3936996 B2 JP3936996 B2 JP 3936996B2 JP 2003281481 A JP2003281481 A JP 2003281481A JP 2003281481 A JP2003281481 A JP 2003281481A JP 3936996 B2 JP3936996 B2 JP 3936996B2
- Authority
- JP
- Japan
- Prior art keywords
- gallium nitride
- single crystal
- pressure
- high pressure
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/0665—Gallium nitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/0685—Crystal sintering
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
赤崎勇 編著、「青色発光デバイスの魅力」、株式会社工業調査会、107〜185頁、1997年5月1日発行
Claims (1)
- 6万気圧以上10万気圧以下、2200℃以上2500℃以下の高温高圧下で一致溶融させた窒化ガリウム融液を、前記高圧下で徐冷することにより単結晶を得ることを特徴とする、単結晶窒化ガリウムの製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003281481A JP3936996B2 (ja) | 2003-07-29 | 2003-07-29 | 単結晶窒化ガリウムの製造方法 |
US10/892,131 US7294198B2 (en) | 2003-07-29 | 2004-07-16 | Process for producing single-crystal gallium nitride |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003281481A JP3936996B2 (ja) | 2003-07-29 | 2003-07-29 | 単結晶窒化ガリウムの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005047749A JP2005047749A (ja) | 2005-02-24 |
JP3936996B2 true JP3936996B2 (ja) | 2007-06-27 |
Family
ID=34266969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003281481A Expired - Fee Related JP3936996B2 (ja) | 2003-07-29 | 2003-07-29 | 単結晶窒化ガリウムの製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7294198B2 (ja) |
JP (1) | JP3936996B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9550971B2 (en) | 2009-04-14 | 2017-01-24 | Therapeutic Proteins International, LLC | Universal bioreactors and methods of use |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100068122A1 (en) * | 2008-08-25 | 2010-03-18 | Chien-Min Sung | Gem Growth Cubic Press and Associated Methods |
EP2761642B1 (en) | 2011-09-29 | 2017-08-23 | Nitride Solutions Inc. | Ion beam generator and method of manufacturing a composition using said generator |
CN114408878B (zh) * | 2022-01-11 | 2023-03-21 | 吉林大学 | 一种钠五唑的高温高压制备和低温常压截获方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6270569B1 (en) * | 1997-06-11 | 2001-08-07 | Hitachi Cable Ltd. | Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method |
TW393786B (en) * | 1998-03-26 | 2000-06-11 | Min Shr | Method for manufacturing an epitaxial chip |
JP3864870B2 (ja) * | 2001-09-19 | 2007-01-10 | 住友電気工業株式会社 | 単結晶窒化ガリウム基板およびその成長方法並びにその製造方法 |
-
2003
- 2003-07-29 JP JP2003281481A patent/JP3936996B2/ja not_active Expired - Fee Related
-
2004
- 2004-07-16 US US10/892,131 patent/US7294198B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9550971B2 (en) | 2009-04-14 | 2017-01-24 | Therapeutic Proteins International, LLC | Universal bioreactors and methods of use |
Also Published As
Publication number | Publication date |
---|---|
US20050098089A1 (en) | 2005-05-12 |
JP2005047749A (ja) | 2005-02-24 |
US7294198B2 (en) | 2007-11-13 |
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