JP3865863B2 - 遠紫外線露光用ポジ型フォトレジスト組成物 - Google Patents

遠紫外線露光用ポジ型フォトレジスト組成物 Download PDF

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Publication number
JP3865863B2
JP3865863B2 JP11579797A JP11579797A JP3865863B2 JP 3865863 B2 JP3865863 B2 JP 3865863B2 JP 11579797 A JP11579797 A JP 11579797A JP 11579797 A JP11579797 A JP 11579797A JP 3865863 B2 JP3865863 B2 JP 3865863B2
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Japan
Prior art keywords
group
embedded image
resin
monomer
alkali
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Expired - Lifetime
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JP11579797A
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Japanese (ja)
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JPH10307396A (ja
JPH10307396A5 (enExample
Inventor
健一郎 佐藤
一也 上西
利明 青合
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富士フイルムホールディングス株式会社
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Priority to JP11579797A priority Critical patent/JP3865863B2/ja
Publication of JPH10307396A publication Critical patent/JPH10307396A/ja
Publication of JPH10307396A5 publication Critical patent/JPH10307396A5/ja
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Publication of JP3865863B2 publication Critical patent/JP3865863B2/ja
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Expired - Lifetime legal-status Critical Current

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
JP11579797A 1997-05-06 1997-05-06 遠紫外線露光用ポジ型フォトレジスト組成物 Expired - Lifetime JP3865863B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11579797A JP3865863B2 (ja) 1997-05-06 1997-05-06 遠紫外線露光用ポジ型フォトレジスト組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11579797A JP3865863B2 (ja) 1997-05-06 1997-05-06 遠紫外線露光用ポジ型フォトレジスト組成物

Publications (3)

Publication Number Publication Date
JPH10307396A JPH10307396A (ja) 1998-11-17
JPH10307396A5 JPH10307396A5 (enExample) 2004-10-14
JP3865863B2 true JP3865863B2 (ja) 2007-01-10

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ID=14671325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11579797A Expired - Lifetime JP3865863B2 (ja) 1997-05-06 1997-05-06 遠紫外線露光用ポジ型フォトレジスト組成物

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JP (1) JP3865863B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69938171T2 (de) 1998-12-11 2008-05-29 Daicel Chemical Industries, Ltd. Verfahren zur herstellung von organischen verbindungen mit imid-katalysatoren
US7537879B2 (en) * 2004-11-22 2009-05-26 Az Electronic Materials Usa Corp. Photoresist composition for deep UV and process thereof
US7951522B2 (en) 2004-12-29 2011-05-31 Tokyo Ohka Kogyo Co., Ltd. Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal
US7927778B2 (en) 2004-12-29 2011-04-19 Tokyo Ohka Kogyo Co., Ltd. Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal
JP4661397B2 (ja) * 2005-06-27 2011-03-30 Jsr株式会社 感放射線性樹脂組成物
JP4796792B2 (ja) * 2005-06-28 2011-10-19 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
KR20100126734A (ko) * 2008-03-12 2010-12-02 다이셀 가가꾸 고교 가부시끼가이샤 락톤 골격을 포함하는 단량체, 고분자 화합물 및 포토레지스트 조성물
JP6435109B2 (ja) * 2013-04-26 2018-12-05 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法

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Publication number Publication date
JPH10307396A (ja) 1998-11-17

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