JP3858589B2 - 液晶装置及び電子機器 - Google Patents

液晶装置及び電子機器 Download PDF

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Publication number
JP3858589B2
JP3858589B2 JP2000368933A JP2000368933A JP3858589B2 JP 3858589 B2 JP3858589 B2 JP 3858589B2 JP 2000368933 A JP2000368933 A JP 2000368933A JP 2000368933 A JP2000368933 A JP 2000368933A JP 3858589 B2 JP3858589 B2 JP 3858589B2
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Japan
Prior art keywords
liquid crystal
wiring
degrees
routing
routing wiring
Prior art date
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Expired - Fee Related
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JP2000368933A
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English (en)
Japanese (ja)
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JP2002169158A5 (cg-RX-API-DMAC7.html
JP2002169158A (ja
Inventor
貴友 戸田
直樹 牧野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
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Seiko Epson Corp
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Priority to JP2000368933A priority Critical patent/JP3858589B2/ja
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Publication of JP2002169158A5 publication Critical patent/JP2002169158A5/ja
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  • Liquid Crystal (AREA)
JP2000368933A 2000-12-04 2000-12-04 液晶装置及び電子機器 Expired - Fee Related JP3858589B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000368933A JP3858589B2 (ja) 2000-12-04 2000-12-04 液晶装置及び電子機器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000368933A JP3858589B2 (ja) 2000-12-04 2000-12-04 液晶装置及び電子機器

Publications (3)

Publication Number Publication Date
JP2002169158A JP2002169158A (ja) 2002-06-14
JP2002169158A5 JP2002169158A5 (cg-RX-API-DMAC7.html) 2004-12-24
JP3858589B2 true JP3858589B2 (ja) 2006-12-13

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ID=18839054

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Application Number Title Priority Date Filing Date
JP2000368933A Expired - Fee Related JP3858589B2 (ja) 2000-12-04 2000-12-04 液晶装置及び電子機器

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JP (1) JP3858589B2 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4723213B2 (ja) * 2003-08-29 2011-07-13 株式会社半導体エネルギー研究所 発光素子の作製方法
US7291967B2 (en) 2003-08-29 2007-11-06 Semiconductor Energy Laboratory Co., Ltd. Light emitting element including a barrier layer and a manufacturing method thereof
US7902747B2 (en) 2003-10-21 2011-03-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having a thin insulating film made of nitrogen and silicon and an electrode made of conductive transparent oxide and silicon dioxide
JP5945467B2 (ja) * 2012-07-11 2016-07-05 スタンレー電気株式会社 液晶表示装置

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Publication number Publication date
JP2002169158A (ja) 2002-06-14

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