JP3853793B2 - Conductive paste for solar cell, solar cell and method for producing solar cell - Google Patents

Description

  The present invention relates to a conductive paste capable of providing high electrical conductivity and excellent adhesion to a semiconductor, a solar cell on which a surface electrode obtained by firing this conductive paste is formed, and manufacture of a solar cell Regarding the method.

  Conventionally, a semiconductor having a pn junction, for example, a silicon semiconductor in which an n-type silicon layer is provided on one surface of a p-type silicon substrate, uses the n-type silicon layer side as a light-receiving surface and increases the light-receiving efficiency on the light-receiving surface side surface. In addition, an anti-reflection layer is provided on the anti-reflection layer side, and a surface electrode having an arbitrary pattern and connected to the semiconductor is provided, and a back electrode is provided on the back surface thereof. Was taking out the power.

  At this time, in order to form the surface electrode, since a thin layer made of a material having a high electrical resistance value such as titanium oxide, silicon dioxide, silicon nitride or the like used as an antireflection layer was used, The surface electrode forming portion of the antireflection layer is removed by etching, and an electrode material such as a baking type conductive paste is printed on the removed portion, and this electrode material is baked at a temperature of about 550 to 900 ° C. And the electrode were connected.

  In addition, since the formation of the electrode by etching is complicated, not suitable for mass production, and cost is high, the paste-like electrode material can be directly printed on the antireflection layer without etching removal of the antireflection layer. The method of connecting an electrode and a semiconductor by applying and baking as it has come to be performed. This method utilizes the fact that when the fired paste-type electrode material printed and applied on the antireflection layer is heated and melted, the antireflection layer located below the electrode material is also melted at the same time. A semiconductor substrate is brought into contact to obtain an ohmic connection between the electrode material and the semiconductor.

At this time, the electrode material for forming the surface electrode contains an element belonging to Group V of the periodic table such as phosphorus (for example, refer to Patent Document 1), or at least one of Ag powder, V, Mo, and W. Containing one kind of metal or a compound thereof (for example, refer to Patent Document 2), or containing one or more of Ti, Bi, Co, Zn, Zr, Fe, and Cr components (for example, , Patent Document 3), and a method for obtaining more stable conductivity by blending various additives has been proposed.
JP 62-49676 A JP-A-10-326522 JP 2001-313400 A

  However, the surface electrode obtained by blending an electrode material such as these conductive pastes with an additive containing a metal and firing it can obtain a stable ohmic connection between the semiconductor and the surface electrode. In particular, when silicon nitride having a high electric resistance value is used as the antireflection layer, not only sufficient conduction cannot be obtained, but also the adhesion strength of the surface electrode is not sufficient to withstand modularization.

  Therefore, the present invention has been made in view of the above circumstances, and firing a surface electrode that can obtain sufficient electrical conductivity and can efficiently extract an electrode from a semiconductor through an antireflection layer. It aims at providing the electrically conductive paste obtained by this.

  As a result of intensive studies, the present inventors have found that the above-mentioned problems can be solved by adding and blending fine particles of a predetermined metal or metal compound having a fine particle diameter into the conductive paste for electrode formation, The present invention has been completed.

That is, the conductive paste of the present invention is a conductive paste comprising an organic binder, a solvent, a glass frit, and a conductive powder made of silver powder or a powder that deposits silver by firing . Y, In, and Mo At least one metal selected from the group consisting of powders of the metal compounds, and an average particle size of 0.001 μm or more and less than 0.1 μm.

  It is preferable that the compounding quantity of this metal or metal compound is 0.1-8 mass parts with respect to 100 mass parts of electroconductive powder.

  In addition, the solar cell of the present invention is a solar cell including a front surface electrode obtained by firing a conductive paste, a silicon semiconductor having a pn junction, an antireflection layer, and a back electrode. The conductive paste is the conductive paste of the present invention.

  Furthermore, the manufacturing method of the solar cell of the present invention includes a printing / coating step of printing or coating the conductive paste of the present invention on an antireflection layer of a silicon semiconductor having a pn junction having an antireflection layer formed on the surface thereof. The conductive paste printed or applied on the antireflection layer includes a firing step for conducting the conductive paste with the silicon semiconductor by firing.

  The conductive paste of the present invention is obtained by uniformly dispersing ultrafine particle additives, and is fired to stabilize between the semiconductor and the conductive paste existing via the antireflection layer. A surface electrode having high conductivity and excellent adhesion can be formed.

  Therefore, according to the solar cell of the present invention, it has a surface electrode obtained by this conductive paste, can secure a stable connection, and can obtain high power generation efficiency. According to this, a solar cell having high power generation efficiency can be manufactured.

  The present invention will be described in detail below.

First, the conductive paste of the present invention will be described.
The conductive paste of the present invention is a conductive paste comprising an organic binder, a solvent, glass frit, conductive powder, and at least one metal selected from Y, In and Mo or a metal compound thereof. The metal or the metal compound thereof has a mean particle diameter of 0.001 μm or more and less than 0.1 μm.

  The organic binder used in the present invention can be used without particular limitation as long as it has a thermal decomposability that has been conventionally used as a baked type resin composition. For example, methyl cellulose, ethyl cellulose, carboxymethyl cellulose, etc. Organic derivatives such as cellulose derivatives, polyvinyl alcohols, polyvinylpyrrolidones, acrylic resins, vinyl acetate-acrylate copolymers, butyral resin derivatives such as polyvinyl butyral, phenol-modified alkyd resins, castor oil fatty acid-modified alkyd resins A binder is mentioned. These resin can be used individually or in mixture of 2 or more types.

  The solvent used in the present invention is not particularly limited as long as it can dissolve the organic binder, and it is preferable to dissolve and mix the organic binder in advance in the production of the conductive paste. Examples of the solvent include dioxane, hexane, toluene, ethyl cellosolve, cyclohexanone, butyl cellosolve, butyl cellosolve acetate, butyl carbitol acetate, diethylene glycol diethyl ether, diacetone alcohol, terpineol, and benzyl alcohol. These can be used individually or in mixture of 2 or more types.

  As this solvent, a solvent having an appropriate boiling point is selected in accordance with the drying conditions, the coating method, and the working conditions.

  The conductive powder used in the present invention is a component that imparts conductivity to the paste, and a commonly used conductive powder can be used. For example, silver powder, silver oxide, silver carbonate, silver acetate, etc. Examples thereof include powders, copper, nickel and the like from which silver alone is precipitated by firing. These can be used alone or in admixture of two or more.

  This conductive powder contains silver powder or powder that deposits silver by firing, and preferably contains 70 to 100% by mass of silver with respect to the conductive powder. In the case where conduction is possible through the antireflection layer as in the present invention, firing is performed at a relatively high temperature, for example, 550 to 850 ° C. In this case, in the case of silver, the reducing property is reduced. Even if the atmosphere is not used, the conductivity is not lowered due to surface oxidation.

  The particle shape of the conductive powder is not particularly limited, and may be flake powder, spherical powder, amorphous powder, or a mixture thereof. Moreover, the average particle diameter (D50) should just be a 20 micrometer or less, and it is preferable that it is 0.1-10 micrometers. When the thickness exceeds 20 μm, dispersion in the organic binder (vehicle) is deteriorated, which causes a problem in workability and printability of the paste. Among these, the conductive powder is particularly preferably a spherical powder of 0.1 to 2.0 μm.

  Moreover, it is preferable that the compounding quantity of electroconductive powder is the range of 70-92 mass% with respect to the whole electroconductive paste in a liquid state. If it is less than 70% by mass, the blending amount of the conductive powder is too small, and the firing density of the electrode is lowered.

  The glass frit used in the present invention is a component that improves adhesion when a conductive paste is printed or coated on an antireflection layer and fired, and is antireflective by interaction with the additive metal or its metal compound. It erodes the layer and effectively performs the functions of both electrical contact and physical adhesion with the semiconductor layer. The glass frit may be any one commonly used for conductive pastes, and typically includes borosilicate glass. A borosilicate glass having a softening temperature of 300 ° C. or more and a firing temperature or less, for example, 800 ° C. or less. Lead acid glass frit can be used. The shape is not particularly limited and may be spherical or crushed powder, and the average particle diameter (D50) is preferably 0.1 to 20 μm. However, in order to maximize the interaction with the additive metal that is the object of the present invention, the average particle diameter (D50) is 1 to 3 μm, and particles having a diameter of 0.5 μm or less and 10 μm or more are cut sharp. It is preferable to use a glass frit having a particle size distribution.

  The blending amount of the glass frit is preferably in the range of 0.05 to 10 parts by mass with respect to 100 parts by mass of the conductive powder, and the electrode obtained by firing the conductive paste does not exhibit interfacial peeling, It is particularly preferably 1 to 5 parts by mass because it does not cause glass floating or poor soldering.

The metal or metal compound used in the present invention is a component that acts on the antireflection layer together with the glass frit when the conductive paste is baked to form the surface electrode, and provides conductivity with the semiconductor, It is selected from at least one metal selected from Y, In and Mo or a compound containing these metals. These can be used alone or in admixture of two or more.

  The average particle diameter of the metal or metal compound is fine particles of 0.001 μm or more and less than 0.1 μm, and preferably 0.01 to 0.05 μm.

  Moreover, although the quantity of this metal or metal compound is selected according to the kind of additive, the thickness of an antireflection layer, and baking conditions, it is 0.1-8 with respect to 100 mass parts of electroconductive powder. 0.0 part by mass, preferably 0.5 to 3.0 parts by mass. If the amount is less than 0.1 parts by mass, sufficient conduction through the antireflection layer cannot be obtained by firing. If the amount exceeds 8.0 parts by mass, the insulating layer at the semiconductor / surface electrode interface generated by firing becomes thick and conductive. Not only can it be removed, it also has an adverse effect on semiconductors.

  The metal or metal compound may be blended with its components in powder form, but in that case, since it is an ultrafine particle, aggregation is intense and it is difficult to uniformly disperse it in the paste. Therefore, a colloidal solution in which a metal or a metal compound is dispersed in a range of 5 to 30% by mass in a dispersion solvent in advance is prepared, and in this state, it is blended into a paste in which other components are mixed and kneaded. As the solvent for dispersion used in this case, the same solvent as that in which the organic binder is dissolved may be used, and among them, an alcohol solvent is preferable.

  At this time, it is particularly preferable to add an appropriate amount of a dispersion stabilizer according to the type of additive to the colloidal solution to prevent the aggregation of ultrafine particles, and this dispersion stabilizer is used for the surface electrode after firing. It is necessary to select one that does not leave the component, and examples thereof include hydroxypropyl cellulose, polyvinyl pyrrolidone, polyvinyl alcohol, starch derivatives, amylose derivatives, primary to tertiary fatty acids and salts thereof.

  In addition, when using a colloidal solution of this metal or metal compound, in order to adjust a stable colloidal solution, for example, by applying ultrasonic vibration of 40 kHz to 1 MHz, the dispersibility is increased, and other components are added. It can also be mixed with the mixed paste.

As the metal compound used here, in addition to oxides and hydroxides of metals selected from Y, In and Mo , metal compounds such that metal fine particles are deposited at a temperature lower than the softening point of the glass frit during firing, For example, an organometallic compound etc. are mentioned.

  In addition to these essential components, the conductive paste of the present invention can contain an antifoaming agent, a coupling agent, and other additives as long as the object of the present invention is not adversely affected. This conductive paste can be produced by thoroughly mixing these components, followed by further kneading with a disperser, a kneader, a three-roll mill, a pot mill, etc., and then degassing under reduced pressure according to a conventional method.

  Next, the solar cell of this invention takes out the electromotive force which arises by light reception of the pn junction of a silicon semiconductor as an electric current, and demonstrates the solar cell of this invention hereafter with reference to drawings.

  FIG. 1 is a sectional view showing an embodiment of the solar cell of the present invention, and FIG. 2 is a diagram showing a surface electrode of the solar cell of the present invention.

  The solar cell 1 of the present invention includes a p-type silicon semiconductor substrate 2, an n-type impurity layer 3 formed on one surface of the semiconductor substrate, an antireflection layer 4 covering the surface of the n-type impurity layer, and the surface of the antireflection layer 4 And the back electrode 6 formed on the surface opposite to the antireflection layer 4 of the semiconductor substrate.

  The semiconductor substrate 2 made of p-type silicon may be either polycrystalline or single crystal, and has a pn junction with the n-type impurity layer 3 so as to generate an electromotive force by receiving light. This pn junction is formed close to the light receiving surface. The semiconductor substrate may be an n-type semiconductor substrate. In this case, the light-receiving surface side may be a p-type impurity layer.

  An antireflection layer 4 is provided on the light receiving surface of the solar cell 1 by an arbitrary method such as CVD in order to prevent reflection on the light receiving surface and increase the light receiving efficiency. Examples of the material for the antireflection layer include titanium oxide, silicon dioxide, silicon nitride, and the like, and silicon nitride is preferable because of its excellent stability as a device. This antireflection layer can also function as a passivation layer, and its thickness is usually 0.05 to 1.0 μm.

On the surface of the antireflection layer 4, a pattern-printed surface electrode 5 is formed. The conductive paste of the present invention, that is, an organic binder, a solvent, glass frit, conductive powder, Y, In And a conductive paste comprising at least one metal selected from Mo and a powder of the metal compound thereof is obtained by firing.

  Further, a back electrode 6 is formed as a thin layer on the entire surface of the semiconductor substrate 2 on which the surface electrode is formed, and this back electrode is also formed of an electrode material such as a conductive paste. is there. The conductive paste that can be used here does not need to be the same conductive paste as the surface electrode 5, and a known conductive paste can be used, but when the same conductive paste as the surface electrode 5 is used, This is preferable in that the adhesive strength is increased.

  In addition, the solar cell 1 of the present invention can be provided with other elements for performing a function as a solar cell. For example, a solder layer for improving the reliability of the solar cell on the surface of the surface electrode 5 May be provided.

Next, the manufacturing method of the solar cell of this invention is demonstrated.
The manufacturing method of the solar cell of the present invention includes a printing / coating step of printing or coating the conductive paste of the present invention on an antireflection layer of a silicon semiconductor having a pn junction having an antireflection layer formed on the surface thereof, The conductive paste printed or applied on the antireflection layer includes a firing step for conducting the conductive paste with the silicon semiconductor by firing.

In the present invention, first, an organic binder, a solvent, a glass frit, a conductive powder, Y, In, and Y on an antireflection layer of a silicon semiconductor having a pn junction having an antireflection layer formed on the entire surface of one side. A conductive paste comprising at least one metal selected from Mo or a metal compound thereof is printed or applied. This is a method usually used in the manufacture of solar cells, such as screen printing. Any other pattern shape can be printed as long as it is not particularly limited. The shape of the pattern may be any shape, but is preferably, for example, a parallel line shape or a lattice shape, and the conductive paste printed here becomes a surface electrode by the next baking step.

  The antireflection layer is made of titanium oxide, silicon dioxide, silicon nitride, or the like. For example, in order to form a silicon nitride film, a mixed gas of silane and ammonia is plasmatized by glow discharge decomposition and deposited. The plasma CVD method can be performed. This antireflection layer is preferably formed so that the refractive index is about 1.8 to 2.3 in consideration of the difference in refractive index from the substrate.

  Next, the conductive paste printed or applied on the surface of the antireflection layer is baked to join the silicon semiconductor for conduction, but is dried in an oven at 80 to 150 ° C. for 5 to 30 minutes and then baked. Thus, conduction between the semiconductor and the surface electrode can be achieved via the antireflection layer, and the surface electrode can be completed.

  Firing is preferably performed at a peak temperature in the range of 550 to 850 ° C. because the glass frit is sufficiently softened to form a uniform and dense electrode to provide conductivity and not deteriorate the semiconductor. In the temperature profile, the total time is preferably set to 10 to 90 seconds, and the temperature rising time until reaching the peak temperature and the cooling time for returning from the peak temperature to room temperature are preferably as short as possible. Further, if necessary, a debuying step for burning off the organic binder may be performed at 250 to 400 ° C. for several seconds to several tens of seconds before raising the temperature to the peak temperature.

  In addition, a back electrode is formed on the reverse surface (back surface) of the semiconductor substrate where the antireflection layer is provided, but before the firing step of the present invention, an electrode material such as conductive paste or metal is applied to the back surface. If it is dried, it is preferable because not only the front surface electrode but also the back surface electrode can be formed simultaneously in the firing step of the present invention. As the electrode material for forming the back electrode, a conductive paste containing a metal such as aluminum or silver powder can be used, and the use of the conductive paste of the present invention is preferable from the viewpoint of increasing the adhesive strength.

  Conduction between the silicon semiconductor and the surface electrode is possible because the metal added to the conductive paste or a part of its metal compound melts by acting on the glass frit during firing, and this mixture prevents reflection This is because it acts on the layer. For example, in the case of an antireflection layer made of silicon nitride, the main three components of glass / silicon nitride / metal additive erode the antireflection layer by forming a stable liquid phase in the firing temperature range, resulting in a semiconductor It is possible to achieve both electrical contact and physical adhesion between the electrode and the surface electrode.

  Such a mixture of glass and metal additive erodes the antireflection layer, but remains on the interface between the surface electrode and the semiconductor, so that the residual amount is large and unevenly distributed. However, in the present invention, the metal or the metal compound as an additive is made into ultrafine particles, so that it can be easily dissolved into glass as compared with a commonly used particle size additive. Thus, the additive compounding amount can be greatly reduced. Thereby, the glass / metal additive mixture acts uniformly on the antireflection layer, and at the same time, the residual amount can be suppressed and the ohmic characteristics after firing can be further stabilized.

  In particular, by using the conductive paste of the present invention as the material of the surface electrode, in the firing process of the present invention, the conduction between the silicon semiconductor existing through the antireflection layer under the surface electrode and the surface electrode is effective. The electromotive force generated by light reception can be efficiently extracted as a current.

  In addition, according to the present invention, a stable connection can be ensured even when an antireflection layer is formed of silicon nitride, which has conventionally been difficult to ensure conduction, and a solar cell with high power generation efficiency is obtained. be able to.

Next, an example explains the present invention.
In the following examples and comparative examples, 100 parts by mass of ethyl cellulose, ETHOCEL STD (trade name, manufactured by Dow Chemical Co.), 360 parts by mass of terpineol (manufactured by Yasuhara Chemical Co., Ltd.) and 40 parts by mass of diethyl phthalate A viscous resin is obtained by performing a dissolution reaction at 85 ° C. for 1 hour in this, and 20 parts by mass of this resin, 3.5 parts by mass of lead borosilicate glass frit (softening point 430 ° C., average particle size 3.0 μm), nonionic type A mixture of 0.5 part by mass of dispersant and 100 parts by mass of silver powder (spherical, average particle size 1.6 μm) was used as a master formulation.

(Examples 1-3 )
90 parts by mass of propylene glycol and 1 part by mass of hydroxypropylcellulose are put into 10 parts by mass of ultrafine molybdenum oxide particles (manufactured by C.I. Kasei Co., Ltd.) having an average particle size of 0.08 μm, and dispersed with ultrasonic waves for 1 hour. An ultrafine colloid was prepared. This colloidal solution is blended to 100 parts by mass of the master-blended silver powder so that it becomes 0.5 parts by mass, 3.0 parts by mass, and 5.0 parts by mass in terms of molybdenum oxide. A conductive paste was produced by performing a kneading process and degassing under reduced pressure.

(Examples 4 to 6 )
After dissolving yttrium nitrate in dehydrated ethanol and refluxing it under heating, nitrogen gas saturated with water vapor at 50 ° C. was introduced at a flow rate of 50 mL / min for 2 hours, and the temperature was maintained and monoethanol was maintained. A solution in which amine was dissolved in dehydrated ethanol was slowly added over 2 hours using a tube pump. Furthermore, after refluxing for 1 hour after the addition, the mixture was cooled, unreacted products and products were removed by ultrafiltration, and the concentration was adjusted to prepare a colloidal solution of 15% yttrium oxide having an average particle size of 0.008 μm. . This colloidal solution was blended so as to be 0.5 parts by mass, 3.0 parts by mass, and 5.0 parts by mass in terms of yttrium oxide with respect to 100 parts by mass of the silver powder of the master composition. The conductive paste was manufactured by carrying out a kneading process and degassing under reduced pressure.

(Examples 7 to 9 )
Dissolve indium chloride in isopropyl alcohol, add excess water and triethanolamine sequentially over 1 hour while stirring at 120 ° C., then reflux for another 1 hour, then cool and unreacted by ultrafiltration The product was removed and the concentration was adjusted to prepare a colloidal solution of 15 mass% indium hydroxide having an average particle size of 0.006 μm. This colloidal solution is blended so as to be 0.5 parts by weight, 3.0 parts by weight, and 5.0 parts by weight in terms of indium hydroxide with respect to 100 parts by weight of the master blended silver powder. A kneading process was performed with a roll mill, and degassed under reduced pressure to produce a conductive paste.

(Comparative Examples 1-7)
5.0 parts by mass of titanium oxide, bismuth oxide, molybdenum oxide, zinc oxide, yttrium oxide, and indium hydroxide having an average particle diameter of 5.0 μm are mixed with 100 parts by mass of the master compounded silver powder. A kneading process was performed with the present roll mill, and degassed under reduced pressure to produce a conductive paste. Moreover, the conductive paste (only master mixing | blending) which does not mix | blend an additive metal was also manufactured similarly, and it was set as the comparative example 1.

(Test Example 1)
Next, a silicon nitride layer having a thickness of 850 mm was formed by plasma CVD on one surface of polycrystalline silicon having a side of 30 mm. Thereafter, a commercially available baked aluminum paste was printed on the surface (back surface) opposite to that on which the silicon nitride layer was formed, and dried in an oven at 120 ° C. for 15 minutes. Two test pieces thus obtained were taken for each example or comparative example, and the conductive pastes produced in Examples 1 to 9 and Comparative Examples 1 to 7 were respectively formed on the surface of the silicon nitride layer. Nine square electrode patterns with a side of 5 mm were created by screen printing. These test pieces were dried in an oven at 120 ° C. for 15 minutes, and then the conductive paste on the front surface and the aluminum paste on the back surface were simultaneously fired using an electric furnace equipped with a belt. The temperature at the center of the furnace is set to 600 ° C., and the test piece is sent to the center of the furnace in 5 seconds. The test piece stays in the center for 5 seconds, and further from there to the exit of the furnace for 5 seconds. The printed conductive paste was baked to produce a surface electrode.

  The resistance value between the front surface electrode and the back surface aluminum electrode thus obtained was measured using a curve tracer model 571 manufactured by Sony Tektronix, Inc., and an average value of 18 measured values in each example and comparative example Was a resistance value through the silicon nitride layer. The results were as shown in Table 1.

(Test Example 2)
Further, a 1 mm × 1 mm silicon chip was mounted with the conductive pastes of Examples 1 to 9 and Comparative Examples 1 to 7, respectively, on the silicon nitride layer of silicon that had been printed and dried to aluminum paste, and the oven at 120 ° C. And then baked under the same conditions as in Test Example 1. The results of measuring the shear bond strength of this silicon chip are shown in Table 1. The measured values are obtained by averaging 10 pastes of each of the examples and comparative examples, and taking the average value.

  As is clear from the above description and Table 1, the conductive paste of the present invention is obtained by uniformly dispersing the additive metal in the form of ultrafine particles, so that the semiconductor paste can be connected to the semiconductor via the antireflection layer in the firing step during electrode formation. Stable high conductivity and adhesive force can be provided between the electrodes. This effect is not only superior to the conventional additive metal, but also the additive metal that has been used for the same purpose has improved electrical and physical connection reliability by adjusting its particle size. In particular, it is remarkable when silicon nitride, which is difficult to ensure electrical conduction as an antireflection layer, is used. Therefore, the present invention can increase the power generation efficiency of the solar cell and is very useful in industry.

It is sectional drawing of the solar cell which concerns on this invention. It is the figure which showed the pattern of the surface electrode of the solar cell which concerns on this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Solar cell, 2 ... Antireflection layer, 3 ... Silicon substrate, 4 ... pn junction, 5 ... Back electrode, 6 ... Front electrode

Claims (6)

In a conductive paste comprising an organic binder, a solvent, a glass frit, and a conductive powder made of silver powder or a powder that deposits silver by firing ,
A conductive paste for solar cells , comprising a powder of at least one metal selected from Y, In and Mo or a metal compound thereof, and having an average particle size of 0.001 μm or more and less than 0.1 μm. The conductive paste for solar cell according to claim 1, wherein the compounding amount of the metal or the metal compound is 0.1 to 8 parts by mass with respect to 100 parts by mass of the conductive powder. The metal or metal compound is dispersed in a solvent for dispersion to form a colloidal solution, and the colloidal solution is kneaded with a paste prepared by mixing the organic binder, the solvent, the glass frit and the conductive powder in advance. The electrically conductive paste for solar cells of Claim 1 or 2. In a solar cell configured to include a surface electrode obtained by firing a conductive paste, a silicon semiconductor having a pn junction, an antireflection layer, and a back electrode,
The said conductive paste is the conductive paste for solar cells of any one of Claims 1 thru | or 3, The solar cell characterized by the above-mentioned.   The solar cell according to claim 4, wherein the antireflection layer is formed of a silicon nitride film. A printing / coating step of printing or applying the solar cell conductive paste according to any one of claims 1 to 3 on a silicon semiconductor antireflection layer having a pn junction having an antireflection layer formed on the surface; ,
A method for manufacturing a solar cell, comprising: a baking step for conducting the conductive paste for solar cell printed or applied on the antireflection layer by baking the silicon semiconductor.

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