JP3850324B2 - Active matrix display device and manufacturing method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an active matrix display device and a manufacturing method thereof.
[0002]
[Prior art]
An active matrix display device in which an active element such as a thin film transistor (TFT) is arranged in each pixel can realize a high-quality flat display device. As a display portion of the active matrix display device, a liquid crystal serving as a light shutter, an organic EL that emits light, an electrophoretic element sealed by a microcapsule, or the like can be used. In addition, these active matrix display devices can be made thin and light, and are therefore suitable for portable information devices such as notebook computers and PDAs.
[0003]
As a TFT used as an active element, a semiconductor film made of amorphous silicon, polycrystalline silicon, or the like is used for an active layer. In producing these TFTs, in order to obtain a good film quality such as a semiconductor film or a gate insulating film, amorphous silicon is about 250 to 350 ° C., and polycrystalline silicon or the like is 400 to 650 ° C. Requires a moderate process temperature. Therefore, the material of the substrate is limited, and glass substrates such as non-alkali glass have been used conventionally.
[0004]
Since portable information devices are considered to be widely used in the future with the development of wireless networks, display devices are required to be thinner and lighter. In response to this requirement, an active matrix display device using a resin substrate instead of a glass substrate as a substrate has been proposed.
[0005]
As an example of an active matrix display device using a resin substrate, it has been reported that TFTs having a process temperature as low as possible are formed by increasing the heat resistance of the resin substrate. In this method, since the specific gravity of the resin substrate is 1/2 or less than that of the glass substrate, the resin substrate can be reduced in weight, and since the plastic is flexible, the resin substrate can be bent and has high impact resistance. I can do it.
[0006]
However, the resin substrate is not only low in heat resistance of about 100 to 200 ° C., but also deformed due to moisture absorption, and its linear expansion coefficient is about one digit larger than that of the glass substrate. Such a tendency is particularly remarkable in a transparent resin substrate required for a display device. For these reasons, when an active element or the like is formed on a resin substrate, peeling or disconnection occurs. Therefore, when a resin substrate is used, a high-precision pattern cannot be formed as in the case where an active element or the like is formed on a glass substrate, and a pixel switch or a pixel switch using a TFT There has been a problem that the performance of the drive circuit and the like is lowered. Furthermore, when a resin substrate is used, there are many restrictions on the material system that can be used. For example, if a brittle metal or an insulating material is used, cracks are likely to occur.
[0007]
On the other hand, as another example of an active matrix display device using a resin substrate, a method of transferring a TFT formed on a glass substrate or a silicon substrate to a resin substrate is disclosed in Japanese Patent Application Laid-Open No. 2001-7340. Proposed. This conventional transfer method will be described with reference to FIGS.
[0008]
First, as shown in FIG. 15A, an isolation layer 1502 made of an insulating film or the like serving as an etching stopper is formed on an element forming substrate 1501 made of glass or the like, and a TFT or an electrode is formed thereon using a normal process. An element 1503 is formed.
[0009]
Next, as shown in FIG. 15B, an adhesive / release layer 1504 having adhesiveness is formed on the intermediate substrate 1505, and the element 1503 formed on the element formation substrate 1501 is interposed via the adhesive / release layer 1504. Then, it is bonded to the intermediate substrate 1505.
[0010]
Next, as shown in FIG. 15C, the element formation substrate 1501 is removed by etching or the like so that the separation layer 1502 remains.
[0011]
Next, as shown in FIG. 15D, an adhesive layer 1506 having adhesiveness is formed on a transfer destination substrate 1507 made of plastic. Then, the separation layer 1502 is bonded to the adhesive layer 1506.
[0012]
Next, as shown in FIG. 15E, the element 1503 is transferred from the intermediate substrate 1505 to the transfer destination substrate 1507 by dissolving the adhesive / release layer 1504 with a solvent.
[0013]
In the transfer method as shown in FIG. 15, glass with good heat resistance or the like can be used as a material for the element formation substrate 1501, so that it is considered that a high-performance TFT can be formed with high accuracy.
[0014]
However, in this method, in order to completely remove the element formation substrate 1501, there are holes in the remaining separation layer 1502, or the separation layer 1502 has a region that is too thin and is etched together with the element formation substrate 1501. In addition, the element 1503 is damaged. Particularly, a large-screen active matrix display device has a high possibility of receiving such damage, and thus has a problem such as a decrease in yield.
[0015]
Further, for a liquid crystal, an organic EL, or the like used as a display portion, the plastic used as the transfer destination substrate 1507 easily transmits moisture and oxygen, so that the deterioration becomes significant. Therefore, it has been necessary to form an inorganic gas barrier layer or the like on the resin substrate to block moisture and oxygen as much as possible.
[0016]
As described above, conventionally, it has been difficult to obtain an active matrix display device that can be formed with a high yield using a lightweight resin substrate.
[0017]
[Problems to be solved by the invention]
The present invention provides an active matrix display device capable of forming a thin glass layer formed by thinning an active element on a lightweight resin substrate so as not to be cracked, and a method for manufacturing the same. For the purpose.
[0018]
[Means for Solving the Problems]
Therefore, the present invention has a resin substrate having a recess on one surface and a wall surrounding the recess, and having a notch provided in at least one position of the wall, and is bonded to the resin substrate via an adhesive layer. A thin glass layer, an active element provided in an array on the thin glass layer, a display unit provided on the thin glass layer and driven by the active element and capable of displaying each pixel, and provided on the display unit An active matrix display device comprising an opposite substrate is provided.
[0019]
Further, the present invention provides a resin substrate having a U-shaped convex portion on three sides of the outer periphery of one surface and a concave portion inside thereof, and a thin glass bonded to the concave portion of the resin substrate via an adhesive layer An active element provided in an array on the thin glass layer, a display unit provided on the thin glass layer and driven by the active element and capable of displaying each pixel, and a counter substrate provided on the display unit An active matrix display device is provided.
[0020]
The present invention also provides a resin substrate, a thin glass layer bonded to the resin substrate via an adhesive layer, a protective member bonded to the periphery of the thin glass layer on the resin substrate via the adhesive layer, and a thin glass An active element provided in an array on the layer; a display unit provided on the thin glass layer that is driven by the active element and capable of displaying each pixel; and a counter substrate provided on the display unit. Provides an active matrix display device characterized in that a notch is provided in at least one place.
[0021]
The present invention also includes a resin substrate, a thin glass layer bonded to the resin substrate via an adhesive layer, and a protective member bonded to the three sides around the thin glass layer on the resin substrate via the adhesive layer. And an active element provided in an array on the thin glass layer, a display unit provided on the thin glass layer and driven by the active element and capable of displaying each pixel, and a counter substrate provided on the display unit. An active matrix display device is provided.
[0022]
The present invention also includes a step of forming active elements in an array on a glass substrate, a step of thinning the glass substrate on which the active elements are formed to form a thin glass layer, a depression on one surface of the resin substrate, A step of forming a wall surrounding the recess and a notch provided in at least one portion of the wall; a step of bonding the thin glass layer to the recess of the resin substrate through the adhesive layer; and the thin glass layer and the counter substrate And a step of forming a display portion that is driven by an active element and can display each pixel, and providing a method for manufacturing an active matrix display device.
[0023]
The present invention also includes a step of forming active elements in an array on a glass substrate, a step of thinning the glass substrate on which the active elements are formed to form a thin glass layer, and three sides of the outer periphery of one surface of the resin substrate. Forming a U-shaped convex portion and a concave portion inside thereof, a step of bonding the thin glass layer to the concave portion of the resin substrate through the adhesive layer, and the thin glass layer and the counter substrate are opposed to each other. And a step of forming a display portion that is driven by an active element and that can display each pixel, and provides a method of manufacturing an active matrix display device.
[0024]
The present invention also includes a step of forming active elements in an array on a glass substrate, a step of thinning the glass substrate on which the active elements are formed to form a thin glass layer, and a thin glass layer on the resin substrate. And a step of adhering the protective member around the thin glass layer on the resin substrate via the adhesive layer, and the thin glass layer and the counter substrate are opposed to each other and driven by the active element for each pixel. And a step of forming a display portion capable of displaying, and a protective member is provided with a notch in at least one place.
[0025]
The present invention also includes a step of forming active elements in an array on a glass substrate, a step of thinning the glass substrate on which the active elements are formed to form a thin glass layer, and a thin glass layer on the resin substrate. Driven by the active element with the thin glass layer and the counter substrate facing each other, the step of adhering the protective member to the three sides around the thin glass layer on the resin substrate via the adhesive layer And a step of forming a display portion capable of displaying for each pixel. A method for manufacturing an active matrix display device is provided.
[0026]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below in detail with reference to the drawings, but the present invention is not limited to these embodiments.
[0027]
(First embodiment)
First, a first embodiment of the present invention will be described. 1A and 1B are diagrams showing an active matrix display device according to the present embodiment, where FIG. 1A is a plan view, FIG. 1B is a cross-sectional view taken along line AA ′, and FIG. 1C is a cross-sectional view taken along line BB ′. It is. 2 to 6 are sectional views showing the steps of the active matrix display device of this embodiment. FIG. 7 is a cross-sectional view showing the element configuration of the active matrix display device of this embodiment.
[0028]
As shown in FIG. 1, the active matrix display device of this embodiment has a recess 109 on one surface and a wall surrounding the recess 109, and a resin substrate having four notches 108 provided on the wall. 107, a thin glass layer 105 bonded to the depression 109 of the resin substrate 107 via an adhesive layer 106, and an active element circuit region 102 having active elements provided in an array on the thin glass layer 105. Have.
[0029]
In the present embodiment, one surface of the resin substrate 107 has a depression 109 and a surrounding wall, and a thin glass layer 105 in which the active element circuit region 102 is formed in the depression 109 is provided. There is a notch 108 in the wall provided around the glass layer 105. With this configuration, the thin glass layer 105 can be bonded to the resin substrate 107 through the adhesive layer 106 without applying a large stress while protecting the thin glass layer 105 from being cracked or the like. Further, when bubbles or the like enter between the thin glass layer 105 and the resin substrate 107 during bonding, the bubbles easily escape from the notch 108.
[0030]
Next, a method for manufacturing the active matrix display device of this embodiment will be described with reference to FIGS.
[0031]
As shown in FIG. 2, an active element circuit region 102 having a TFT array using a low-temperature polysilicon as an active layer and a peripheral driver circuit is formed on a glass substrate 101 made of alkali-free glass having a thickness of about 0.7 mm. .
[0032]
As shown in FIG. 3, the side of the glass substrate 101 on which the active element circuit region 102 is formed is bonded to an intermediate substrate 103 made of glass, resin, or the like via an adhesive / release layer 104. As the adhesive / peeling layer 104, a water-soluble photo-curing adhesive, wax softened by heating or cooling, a hot melt adhesive, or the like can be used.
[0033]
As shown in FIG. 4, the glass substrate 101 is polished by a method such as mechanical polishing, chemical polishing, mechanical chemical polishing, or the like to form a thin glass layer 105. The film thickness of the thin glass layer 105 is preferably about 150 μm or less. When the film thickness of the thin glass layer 105 is larger than about 150 μm, the thin glass layer 105 is easily broken when stress is applied by bending or the like after the active matrix display device is completed. Further, the thickness of the thin glass layer 105 is preferably about 100 μm or less. In order to make it possible to use the thin glass layer 105 as a moisture or oxygen barrier layer, the thickness of the thin glass layer 105 is preferably about 1 μm or more.
[0034]
As shown in FIG. 5, a thin glass layer 105 bonded to the intermediate substrate 103 is bonded via a bonding layer 106 on a resin substrate 107 in which a recess 109 and a wall surrounding the recess 109 are formed. The size of the recess 109 is provided so as to correspond to the size of the thin glass layer 105, and at least one notch 108 is provided on the wall around the recess 109 as shown in FIG. By providing a plurality of cutouts 108, it is easy to escape when air bubbles enter the adhesive layer 106 between the thin glass layer 105 and the resin substrate 107. In this embodiment, the cutouts 108 are located near the center of each side. One by one. The size of the recess 109 does not match the size of the thin glass layer 105, and a slight gap may be provided between the wall around the recess 109 and the thin glass layer 105. In that case, the adhesive is also applied to the side of the wall. Enters and the resin substrate 107 and the thin glass layer 105 adhere well. It is preferable that the relationship between the depth of the depression 109 and the thickness of the thin glass layer 105 is approximately the same, or the depth of the depression 109 is increased. Since the thin glass layer 105 is embedded in the depression 109 by making the depth of the depression 109 the same or larger, the thin glass layer 105 can be sufficiently protected. If the depth of the depression 109 is too large compared to the thickness of the thin glass layer 105, it is difficult to take out the wiring from the signal line driving circuit or the scanning line driving circuit to the outside of the substrate. The width of the wall around the depression 109 is preferably about 1 mm or more and 5 mm or less. If it is smaller than about 1 mm, it may not be sufficient to protect the thin glass layer 105. If it is larger than about 5 mm, the size of the element circuit region 102 is smaller than the size of the resin substrate 107. Because it becomes.
[0035]
As the resin substrate 107, polyether sulfone (PES), polyallyl ether nitrile (PEN), polyethylene terephthalate (PET), or the like can be used, but is not limited thereto. Among these, PES and the like are particularly preferable because processing such as formation of the recess 109 is easy. In addition, as the adhesive layer 106, a material having a low viscosity is preferable because air bubbles hardly enter between the thin glass layer 105 and the resin substrate 107.
[0036]
The method of forming the recess 109, the surrounding wall, and the notch provided in the wall on the resin substrate 107 is an injection molding method, or a substrate having a uniform thickness is heated and pressed with a press machine. A method or a method of forming a mold having a desired shape and pouring a substrate material into the mold can be used.
[0037]
As shown in FIG. 6, the adhesive / peeling layer 104 is peeled off after the adhesiveness of the adhesive / peeling layer 104 is lowered by irradiating ultraviolet rays or heating from the intermediate substrate 103 side. A thin glass layer 105 in which the active element circuit region 102 is formed is bonded to a resin substrate 107 having a recess 109 and a wall around the recess 109 and having a notch 108 in the wall via an adhesive layer 106. The configuration is as follows.
[0038]
Next, an example of an element structure that can be used in the active matrix display device of this embodiment will be described with reference to FIG. In FIG. 7, the display device includes only two pixels, but in reality, the display device has a matrix shape in which a large number of pixels are provided vertically and horizontally as viewed from the display surface.
[0039]
7 is described above the thin glass layer 105, which is different from that in FIG.
[0040]
As shown in FIG. 7, on the thin glass layer 105, a first undercoat insulating film 1001 and a second undercoat insulating film 1002 are stacked, and a polysilicon film comprising an active layer 1004 and source / drain regions 1005 is formed. 1003 is provided for each pixel. A gate insulating film 1006 is provided over the entire surface, and a gate electrode 1007 is provided in a region corresponding to the active layer 1004 on the gate insulating film 1006. An interlayer insulating film 1008 is provided over the entire surface of the gate electrode 1007, and a source electrode 1009 and a drain electrode 1010 connected to the source / drain region 1005 through contact holes are provided thereon. Wirings such as scanning lines and signal lines 1012 are provided in the same layer as the source electrode 1009 and the drain electrode 1010. A passivation film 1011 is provided over the entire surface, and a pixel electrode 1013 connected to the drain electrode 1010 through a contact hole is provided over the passivation film 1011. A counter substrate 1017 having a counter electrode 1014 formed thereon is provided over the liquid crystal layer 1016. The counter substrate 1017 and the resin substrate 107 are sealed with a seal 1015.
[0041]
A method for manufacturing the element having such a configuration will be described.
[0042]
First, a first undercoat insulating film 1001 and a second undercoat insulating film 1002 are formed on the glass substrate 101. The first undercoat insulating film 1001 is made of silicon nitride and has a thickness of about 500 nm, and the second undercoat insulating film 1002 is made of silicon oxide and has a thickness of about 100 nm. These undercoat insulating films may be a single layer or other materials. The film thickness is preferably about 100 to 500 nm.
[0043]
On the second undercoat insulating film 1002, amorphous silicon that will later become the active layer 1004 and the source / drain regions 1005 is formed to a thickness of about 50 nm, and is crystallized by excimer laser annealing to form a polysilicon layer. After patterning as 1003, patterning is performed. As a crystallization method, in addition to simple laser irradiation, a laser irradiation intensity distribution is formed to grow crystals in the surface to increase the grain size, or a method of crystallization at a high temperature without using a laser. Good. In temperature rising crystallization, a method of crystallization using a metal such as Ni can also be used. The crystal grain size may be from a relatively small one such as about 0.1 μm to 10 μm or more to a large one close to a single crystal, or may be one in which lattices are continuously connected at the crystal grain boundary. The source / drain region 1005 is formed by introducing n-type and p-type impurities by ion doping, mass-separated ion implantation, or the like. After forming the gate electrode described later, a self-aligned structure using the gate electrode as a mask may be applied, and a low-concentration doping region is provided between the source / drain region 1005 of the high-concentration impurity and the active layer 1004. An sandwiched LDD structure may be applied.
[0044]
Next, a gate insulating film 1006 is formed on the entire surface by a plasma CVD method or the like so as to have a thickness of about 100 nm.
[0045]
Next, in a region corresponding to the active layer 1004, the gate electrode 1007 is formed using a metal such as Mo, MoW, MoTa, Al or Al—Cu, an alloy, or highly doped silicon. To form.
[0046]
Over the gate electrode 1007, an interlayer insulating film 1008 having a thickness of about 400 nm is formed on the entire surface using a silicon oxide film, a laminated film of a silicon oxide film and a silicon nitride film, or the like.
[0047]
On the interlayer insulating film 1008, through electrodes are formed in the gate insulating film 1006 and the interlayer insulating film 1008 so as to be connected to the source / drain regions 1005, and the source electrode 1009 and the drain electrode 1010 are respectively connected to Mo, MoW, MoTa, Al, and the like. It is formed using a metal such as Al-Cu, an alloy, or highly doped silicon.
[0048]
Further, in the same layer as the source electrode 1009 and the drain electrode 1010, wirings such as scanning lines and signal lines 1012 are formed using the same conductive material as described above.
[0049]
After these electrodes and wirings are formed, a passivation film 1011 is formed to a thickness of about 500 nm by a plasma CVD method using a silicon nitride film or the like.
[0050]
A pixel electrode 1013 that is connected to the drain electrode 1010 through a through hole formed in the passivation film 1011 is provided on the passivation film 1011. When the pixel electrode 1013 has a color filter on array (COA) structure or a transmission type, a transparent conductive film such as ITO may be used. In the case of a reflective type, a metal having a high reflectivity such as Al or Ag can be used.
[0051]
A counter electrode 1014 is formed on a counter substrate 1017 made of resin or the like using a transparent conductive film such as ITO. The surface of the counter substrate 1017 on the side where the counter electrode 1014 is formed and the surface of the resin substrate 107 on which the thin glass layer 105 on which the above-described element circuit region is formed are opposed to each other and sealed with a seal 1015. . Liquid crystal is injected as a display portion between these substrates to form a liquid crystal layer 1016, and the active matrix display device of this embodiment is completed.
[0052]
In the active matrix display device of this embodiment, an element circuit region is formed on a heat-resistant substrate such as an alkali-free glass substrate, and then the substrate is thinned and bonded to a lightweight resin substrate. The resin substrate 107 is formed with a recess 109 and a wall provided around the recess 109. At least one notch is provided in the wall, and the thin glass layer 105 is bonded to the recess 109 via the adhesive layer 106. Let Then, when the glass substrate is thinned to make the thin glass layer 105, cracking is particularly likely to occur from the end portion. However, in this embodiment, the thin glass layer 105 is fitted in the recess 109, so that the thin glass layer 105 Since the resin substrate 107 is further provided around the end portion, the thin glass layer 105 is protected. Therefore, an active matrix display device using a lightweight resin substrate 107 can be obtained. When an active element is formed directly on the resin substrate 107, moisture or oxygen may be transmitted. However, since the thin glass layer 105 exists on the resin substrate 107 with the adhesive layer 106 interposed therebetween, the thin element is thin. The glass layer 105 becomes a moisture or gas barrier layer.
[0053]
Further, if bubbles are formed when the thin glass layer 105 is bonded to the recess 109 of the resin substrate 107 via the adhesive layer 106, the side surface of the thin glass layer 105 has a wall around the recess 109, and the bonding is also performed. Since the layer 106 also enters between the wall of the resin substrate 107 and the thin glass layer 105, the bubbles are difficult to escape. When an active matrix display device is completed with bubbles contained therein, the refractive index of light differs between a region containing bubbles and a region not containing bubbles. Then, it becomes impossible to form a transmissive display device, and there is a possibility that cracking may occur starting from the region containing the bubbles. However, in this embodiment, since the notch 108 is provided, even if there is a wall of the resin substrate 107 around the recess 109 in order to protect the thin glass layer 105, the bubbles can easily escape from the notch 108. ,preferable. In the present embodiment, the number of the notches 108 is four. However, the number is not limited to this, and it is sufficient that at least one bubble is removed. Further, the position of the notch 108 need not be the center of each side. Since there is a possibility of being used as a transmissive display device, it is not preferable to create a bubble escape path in the substrate surface in a direction perpendicular to the substrate surface.
[0054]
In this embodiment, the thin glass layer 105 and the resin substrate 107 are bonded via the adhesive layer 106, and the strength of the thin glass layer 105 thinned is low. I can't do that. Therefore, even if a bubble enters between them, it cannot be pressed firmly to escape the bubble, but can be released by providing the notch 108.
[0055]
In this embodiment, the step of thinning the glass substrate 101 to form the thin glass layer 105 is performed after the glass substrate 101 is bonded to the intermediate substrate 103 via the adhesive / peeling layer 104, but is not limited thereto. For example, after the glass substrate 101 is bonded to the counter substrate 1017 and fixed, the glass substrate 101 may be thinned to form the thin glass layer 105.
[0056]
In the present embodiment, an active matrix display device in which one pixel includes one switching transistor, a pixel electrode, an auxiliary capacitor, and the like is shown. However, in addition to this, a memory circuit (flip-flop; SRAM type) is provided for each pixel. A storage capacitor and a driver transistor (DRAM type) may be provided to achieve low power consumption. In addition to the scanning line and signal line driver circuits, a control circuit, a CPU, a memory, and the like may be integrally formed as the control circuit. The active element circuit region 102 including these circuits and display electrodes may be considered. Although microfabrication is essential for these circuits, since they are formed on an alkali-free glass substrate, the substrate is less deformed, can be applied to circuits with high processing accuracy, high performance, and high integration.
[0057]
As shown in FIG. 7, the active matrix display device according to the present embodiment combines the active matrix substrate on the side where the element circuit region is formed with the counter substrate provided with the counter electrode, and fixes the periphery with a seal. Although the liquid crystal display device is formed by injecting liquid crystal into the liquid crystal display device, the present invention is not limited to this. For example, even when a liquid crystal display device is used, when a TN liquid crystal or the like is used as the liquid crystal, an alignment film may be formed, or a spacer may be provided between the two substrates to keep the gap. In addition, the active element circuit area is configured to include a current drive type peripheral driver circuit, a selection switch using 2 to 6 transistors in the pixel, a current supply drive transistor, a transistor characteristic variation correction circuit, and the like. An organic EL display device using an organic EL element may be formed. In this embodiment, in addition to the case where an electrophoretic element is used as a display unit or a liquid crystal is used, a pair of comb-shaped pixel electrodes are provided on the element circuit region side without using the counter electrode, and the display surface direction The present invention may also be applied to a method of driving a liquid crystal by applying an electric field.
[0058]
(Second Embodiment)
Next, a second embodiment will be described with reference to FIG. FIG. 8 is a plan view of an active matrix display device according to the second embodiment. In the present embodiment, only differences from the first embodiment will be described, and the same parts will be omitted.
[0059]
In the active matrix display device of this embodiment, the position of the notch 201 is provided at the intersection of the four sides of the resin substrate 107, that is, at the apex.
[0060]
When the thin glass layer 105 and the resin substrate 107 are bonded via the adhesive layer 106, the bubbles are likely to converge at the apex of the thin glass layer 105 after the bubbles enter. Further, if there is a bubble at this apex portion, the thin glass layer 105 and the resin substrate 107 are easily separated. However, in the present embodiment, not only can the same effect as in the first embodiment be obtained, but also because the notch 201 is provided at the apex, there is also an effect that bubbles can easily escape and peeling does not easily occur. .
[0061]
(Third embodiment)
Next, a third embodiment will be described with reference to FIG. FIG. 9 is a plan view of an active matrix display device according to the third embodiment. In the present embodiment, only differences from the first embodiment will be described, and the same parts will be omitted.
[0062]
The active matrix display device of this embodiment is the same as that of the first embodiment in that the thin glass layer 105 is fitted in the recess of the resin substrate 107, but the recess of the resin substrate 107 is not four sides but three sides. Is different from the first embodiment in that it is covered with a U-shaped convex portion. That is, the resin substrate 107 has a U-shaped convex portion 302 and a concave portion 301 inside thereof, and the thin glass layer 105 is bonded onto the concave portion 301 via the adhesive layer 106.
[0063]
Also in this embodiment, since the thin glass layer 105 is surrounded by the U-shaped convex portions 302 on the three sides, the strength increases, and bubbles can escape from one side. In the present embodiment also, the protrusion 302 may be further provided with a notch.
[0064]
(Fourth embodiment)
Next, a fourth embodiment will be described with reference to FIG. FIG. 10 is a sectional view of an active matrix display device according to the fourth embodiment. In the present embodiment, only differences from the first embodiment will be described, and the same parts will be omitted.
[0065]
In the active matrix display device according to the present embodiment, a recess is not provided in the resin substrate, but a protective member 401 is provided in a frame shape on the outer periphery on one surface of the resin substrate 107, and the protective member 401 serves as a wall to the inside. Is a depression. The protective member 401 has at least one notch.
[0066]
In this embodiment, without forming a recess in the resin substrate 107, a protective member 401 made of PEN, PES, PET, polycarbonate (PC), or the like is provided on the outer periphery of the resin substrate 107 with an acrylic, epoxy, or aryl type. The only difference from the method of manufacturing the active matrix display device of the first embodiment is that the bonding is performed using an ultraviolet curing type or thermosetting type adhesive (not shown) made of resin or the like. As the adhesive, the same adhesive as the adhesive layer 106 that adheres the thin glass layer 105 and the resin substrate 107 may be used. Similarly to the first embodiment, the width of the adhesive surface of the protective member 401 to the resin substrate 107, that is, the width of the wall is about 1 mm to 5 mm, and is formed by the side surface of the protective member 401 and the surface of the resin substrate 107. The depth of the depression is preferably about the same as or slightly deeper than the thickness of the thin glass layer 105.
[0067]
Also in this embodiment, the same effect as that of the first embodiment can be obtained. In addition, when providing a depression on the substrate surface of the resin substrate 104, it is difficult to provide a uniform depression depth, but in this embodiment, since the processing of the substrate surface of the resin substrate 104 is not necessary, An active matrix display device with a high yield can be formed.
[0068]
(Fifth embodiment)
Next, a fifth embodiment will be described with reference to FIG. FIG. 11 is a sectional view of an active matrix display device according to the fifth embodiment. In the present embodiment, only differences from the first embodiment will be described, and the same parts will be omitted.
[0069]
In the active matrix display device of this embodiment, the resin substrate 107 is not provided with a depression, but a protective member 501 is provided on the side surface of the resin substrate 107, and a wall is formed by the protective member 501. To form a depression. The protective member 501 has at least one notch.
[0070]
In the present embodiment, the protective member 501 and the side surface of the resin substrate 107 are bonded to the side surface of the resin substrate 107 and the upper portion thereof by using the same adhesive and protective material as in the fourth embodiment. Also in this embodiment, the same effects as those in the first embodiment and the fourth embodiment can be obtained.
[0071]
(Sixth embodiment)
Next, a sixth embodiment will be described with reference to FIG. FIG. 12 is a sectional view of an active matrix display device according to the sixth embodiment. In the present embodiment, only differences from the first embodiment will be described, and the same parts will be omitted.
[0072]
In the active matrix display device according to the present embodiment, the protective member 601 is provided so as to surround the side surface of the resin substrate 107 instead of providing the resin substrate with a depression. The protective member 601 forms a flat surface continuously with the resin substrate 107 on one substrate surface, and a flat surface continuous with the resin substrate 107 on the other substrate surface and a wall having a recess as a flat surface on the outer periphery. It is formed so as to surround the resin substrate 107. And the part used as the wall of the protection member 601 has at least one notch.
[0073]
In the present embodiment, the protective member 501 and the side surface of the resin substrate 107 are bonded to the side surface of the resin substrate 107 using the same adhesive and the material of the protective member as in the fourth embodiment. Also in this embodiment, the same effects as those in the first embodiment and the fourth embodiment can be obtained.
[0074]
(Seventh embodiment)
Next, a seventh embodiment will be described with reference to FIG. FIG. 13 is a sectional view of an active matrix display device according to the seventh embodiment. In the present embodiment, only differences from the first embodiment will be described, and the same parts will be omitted.
[0075]
In the active matrix display device of this embodiment, the resin substrate 107 is not provided with a depression, but a protective member 701 is provided in a frame shape on the outer periphery on one surface of the resin substrate 107, and the protective member 701 serves as a wall to the inside. Is a depression. The protective member 701 has at least one notch. Further, the upper surface of the outer periphery of the thin glass layer 105 is covered from the outermost periphery of the first protective member 701 on the thin glass layer 105 bonded to the inner side of the first protective member 701 through the adhesive layer 106. A second protective member 702 is provided in a frame shape.
[0076]
Also in this embodiment, the same effect as the first embodiment can be obtained. In addition, since the second protective member 702 is provided on the outer periphery of the first protective member 701 and the thin glass layer 105, the upper surface of the thin glass layer 105 can be protected.
[0077]
(Eighth embodiment)
Next, an eighth embodiment will be described with reference to FIG. FIG. 14 is a sectional view of an active matrix display device according to the eighth embodiment. In the present embodiment, only differences from the first embodiment will be described, and the same parts will be omitted.
[0078]
The active matrix display device according to the present embodiment has a recess 801 and a wall surrounding the recess 801 in the resin substrate 107, and is similar to the first embodiment in that it has at least one notch in the wall. The thin glass layer 105 is bonded to the recess 801 via the adhesive layer 106, and the protective member 802 is provided in a frame shape so as to cover the upper surface of the outer periphery of the thin glass layer 105 from the outermost periphery of the resin substrate 107. Is different from the first embodiment.
[0079]
In the present embodiment, it is possible to obtain the effects of both the first embodiment and the seventh embodiment.
[0080]
In the fourth to eighth embodiments, description has been made using only cross-sectional views, but in these embodiments, notches such as those shown in the first to third embodiments, respectively, are provided. Any of these may be combined. That is, in the fourth embodiment to the eighth embodiment, as in the first embodiment and the second embodiment, at least one notch is provided somewhere on the wall around the depression, or the third embodiment As in the embodiment, it is possible to assume a configuration in which a hollow is formed on the inside of a wall covered with a U-shape on three sides, and a thin glass layer is fitted in the recess.
[0081]
In addition to the first embodiment, a configuration in which a thin glass layer on which an active element is formed is simply pasted to a resin substrate is shown, and a display unit provided thereon and a counter electrode provided on the display unit are formed. The counter substrate is omitted.
[0082]
In addition, although the example which provided the notch in each above-mentioned embodiment was shown, if the path which a bubble escapes when a bubble enters is formed, it is not necessary to have the shape mentioned above, and a through-hole penetrating a wall or The same effect can be obtained by providing a notch that does not penetrate the wall.
[0083]
【The invention's effect】
As described above in detail, according to the present invention, an active matrix type in which a thin glass layer formed by thinning an active element can be attached to a lightweight resin substrate without being cracked. A display device and a manufacturing method thereof can be provided.
[Brief description of the drawings]
FIG. 1A is a plan view showing an active matrix display device according to a first embodiment of the present invention, FIG. 1B is a cross-sectional view taken along line AA ′, and FIG. FIG.
FIG. 2 is a cross-sectional view showing a manufacturing process of the active matrix display device according to the first embodiment of the invention.
FIG. 3 is a cross-sectional view showing a manufacturing process of the active matrix display device according to the first embodiment of the invention.
FIG. 4 is a cross-sectional view showing a manufacturing process of the active matrix display device according to the first embodiment of the invention.
FIG. 5 is a cross-sectional view showing a manufacturing process of the active matrix display device according to the first embodiment of the invention.
FIG. 6 is a cross-sectional view showing a manufacturing process of the active matrix display device according to the first embodiment of the invention.
FIG. 7 is a cross-sectional view showing an element configuration of the active matrix display device according to the first embodiment of the present invention.
FIG. 8 is a plan view showing an active matrix display device according to a second embodiment of the present invention.
FIG. 9 is a plan view showing an active matrix display device according to a third embodiment of the present invention.
FIG. 10 is a cross-sectional view showing an active matrix display device according to a fourth embodiment of the present invention.
FIG. 11 is a cross-sectional view showing an active matrix display device according to a fifth embodiment of the present invention.
FIG. 12 is a cross-sectional view showing an active matrix display device according to a sixth embodiment of the present invention.
FIG. 13 is a cross-sectional view showing an active matrix display device according to a seventh embodiment of the present invention.
FIG. 14 is a cross-sectional view showing an active matrix display device according to an eighth embodiment of the present invention.
15 (a), (b), (c), (d), and (e) are cross-sectional views showing a manufacturing process of a conventional active matrix display device.
[Explanation of symbols]
101 ... Glass substrate
102: Element circuit area
103, 1505 ... Intermediate substrate
104, 1504 ... Adhesion / peeling layer
105 ... Thin glass layer
106, 1506... Adhesive layer
107: Resin substrate
108, 201 ... notches
109, 801 ... depression
301 ... concave
302 ... convex portion
401, 501, 601, 802 ... Protective member
701 ... First protective member
702 ... Second protective member
1001... First undercoat insulating film
1002 ... Second undercoat insulating film
1003 ... Polysilicon layer
1004 ... Active layer
1005 ... Source / drain region
1006 ... Gate insulating film
1007 ... Gate electrode
1008 ... Interlayer insulating film
1009 ... Source electrode
1010 ... Drain electrode
1011 ... Passivation film
1012: Scanning line / signal line
1013: Pixel electrode
1014 ... Counter electrode
1015 ... Seal
1016 ... Liquid crystal layer
1017 ... Counter substrate
1501... Element formation substrate
1502 ... Separation layer
1503 element
1507 ... Transfer destination substrate

Claims (8)

A resin substrate having a recess on one surface and a wall surrounding the recess, and having a notch provided in at least one location of the wall;
A thin glass layer bonded via an adhesive layer on the recess of the resin substrate;
Active elements provided in an array on the thin glass layer;
A display unit provided on the thin glass layer and driven by the active element and capable of being displayed for each pixel;
An active matrix display device comprising: a counter substrate provided on the display portion. A resin substrate having a U-shaped convex part on the three sides of the outer periphery of one surface, and a concave part inside thereof,
A thin glass layer adhered on the concave portion of the resin substrate via an adhesive layer;
Active elements provided in an array on the thin glass layer;
A display unit provided on the thin glass layer and driven by the active element and capable of being displayed for each pixel;
An active matrix display device comprising: a counter substrate provided on the display portion. A resin substrate;
A thin glass layer adhered on the resin substrate via an adhesive layer;
A protective member adhered to the periphery of the thin glass layer on the resin substrate via an adhesive layer;
Active elements provided in an array on the thin glass layer;
A display unit provided on the thin glass layer and driven by the active element and capable of being displayed for each pixel;
A counter substrate provided on the display unit,
An active matrix display device, wherein the protective member is provided with a notch at least at one location. A resin substrate;
A thin glass layer adhered on the resin substrate via an adhesive layer;
A protective member bonded to the three sides around the thin glass layer on the resin substrate via an adhesive layer;
Active elements provided in an array on the thin glass layer;
A display unit provided on the thin glass layer and driven by the active element and capable of being displayed for each pixel;
An active matrix display device comprising: a counter substrate provided on the display portion. Forming active elements in an array on a glass substrate;
Thinning the glass substrate on which the active element is formed into a thin glass layer;
Forming a recess on one surface of the resin substrate, a wall surrounding the recess, and a notch provided in at least one location of the wall;
A step of adhering the thin glass layer to the depression of the resin substrate through an adhesive layer, and a display unit that is driven by the active element and can be displayed for each pixel with the thin glass layer and the counter substrate facing each other. And a process for forming the active matrix display device. Forming active elements in an array on a glass substrate;
Thinning the glass substrate on which the active element is formed into a thin glass layer;
Forming a U-shaped convex part on the three sides of the outer periphery of one surface of the resin substrate, and a concave part inside thereof;
A step of adhering the thin glass layer to the concave portion of the resin substrate through an adhesive layer, and a display unit that is driven by the active element and can be displayed for each pixel with the thin glass layer and the counter substrate facing each other. And a process for forming the active matrix display device. Forming active elements in an array on a glass substrate;
Thinning the glass substrate on which the active element is formed into a thin glass layer;
Adhering the thin glass layer on a resin substrate via an adhesive layer;
Bonding a protective member around the thin glass layer on the resin substrate via an adhesive layer;
Forming the display unit that is driven by the active element and can be displayed for each pixel, with the thin glass layer facing the counter substrate,
A method of manufacturing an active matrix display device, wherein the protective member is provided with a notch at least at one location. Forming active elements in an array on a glass substrate;
Thinning the glass substrate on which the active element is formed into a thin glass layer;
Adhering the thin glass layer on a resin substrate via an adhesive layer;
Adhering a protective member to the three sides around the thin glass layer on the resin substrate via an adhesive layer;
And a step of forming a display portion that is driven by the active element and capable of displaying each pixel, with the thin glass layer facing the counter substrate.

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