JP2003280549A - Active matrix type display device, and its producing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an active matrix type display device which is formed by sticking a thin glass layer obtained by forming active elements as a film onto a light resin substrate so as not to break it, and also to provide its producing method. <P>SOLUTION: The matrix type display device includes: the resin substrate comprising recessions and a wall enclosing each recession on one front surface, and comprising each notch which is arranged at least one place on each wall; the thin glass layer bonded onto the recession of the resin substrate via an adhesive layer; the active elements arrayed on the thin glass layer; a display part which is arranged on the thin glass layer, is driven by the active elements, and performs display at each pixel; and an opposing substrate disposed on the display part. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix type display device and its manufacturing method.

[0002]

2. Description of the Related Art A thin film transistor (TFT) is provided in each pixel.
The active matrix type display device in which the active elements such as are arranged can realize a high quality flat type display device. As the display unit of this active matrix type display device, a liquid crystal serving as a light shutter, a self-luminous organic EL, an electrophoretic element encapsulated by a microcapsule, or the like can be used. Further, since these active matrix type display devices can be made thin and lightweight, they are suitable for portable information devices such as notebook computers and PDAs.

In a TFT used as an active element, a semiconductor film made of amorphous silicon, polycrystalline silicon or the like is used as an active layer. These TF
In order to obtain good film quality such as a semiconductor film and a gate insulating film when T is manufactured, amorphous silicon is used in an amount of 250 to 3
A process temperature of about 50 to about 650 ° C. is required for silicon having good crystallinity such as polycrystalline silicon. Therefore, the material of the substrate is limited, and glass substrates such as alkali-free glass have been used conventionally.

Since portable information equipment is expected to be widely used with the development of wireless networks in the future, further thinning and lightening of the display device are required. To meet this demand, an active matrix type display device using a resin substrate instead of a glass substrate has been proposed as a substrate.

As an example of an active matrix type display device using a resin substrate, it has been reported that the heat resistance of the resin substrate is increased and a TFT having a process temperature as low as possible is formed. In this method, since the resin substrate has a specific gravity of 1/2 or less as compared with the glass substrate, the resin substrate can be made lighter, and since the plastic is flexible, it can be bent, and it has characteristics such as strong impact resistance. You can

However, the resin substrate simply has a heat resistance of 1
Not only is it as low as about 00 to 200 ° C., but it is also deformed by absorbing moisture, and its coefficient of linear expansion is about one digit higher than that of the glass substrate. This tendency is remarkable especially in the transparent resin substrate required for the display device. From these, peeling, disconnection, etc. occur when an active element or the like is formed on a resin substrate. Therefore, when a resin substrate is used, it is not possible to form a highly precise pattern like when forming an active element or the like on a glass substrate,
Further, there is a problem that the performance of the pixel switch and the driving circuit in the pixel section using the TFT is deteriorated. Furthermore, when a resin substrate is used, if a brittle metal or an insulating material is used, cracks are likely to occur, which limits the usable material system.

On the other hand, as another example of an active matrix type display device using a resin substrate, a method of transferring a TFT formed on a glass substrate or a silicon substrate to the resin substrate is disclosed in Japanese Patent Laid-Open No. 2001-7340. It is proposed in the bulletin. This conventional transfer method is shown in FIGS.
Will be explained.

First, as shown in FIG. 15A, a separation layer 1502 made of an insulating film or the like serving as an etching stopper is formed on an element formation substrate 1501 made of glass or the like, and a normal process is applied thereon. An element 1503 such as a TFT or an electrode is formed.

Next, as shown in FIG. 15B, an adhesive / peeling layer 1504 having adhesiveness is formed on the intermediate substrate 1505, and the element 150 formed on the element forming substrate 1501.
3 through the adhesive / peel layer 1504
Glue to.

Next, as shown in FIG. 15C, the element formation substrate 1501 is separated by a separation layer 1502 by etching or the like.
Remove so that it remains.

Next, as shown in FIG. 15D, an adhesive layer 1506 having adhesiveness is formed on a transfer destination substrate 1507 made of plastic. Then, the separation layer 1502 is attached to the adhesive layer 1506.

Next, as shown in FIG. 15E, the element 1503 is transferred from the intermediate substrate 1505 to the transfer destination substrate 1507 by dissolving the adhesive / peelable layer 1504 with a solvent.

In the transfer method as shown in FIG. 15, since it is possible to use glass or the like having good heat resistance as the material of the element forming substrate 1501, it is possible to perform the TFT with high precision and high performance.
Is thought to be formed.

However, in this method, since the element forming substrate 1501 is completely removed, the remaining separation layer 1502 is removed.
The element 1503 is damaged in the case where the element formation substrate 1501 is etched together with a hole or a region where the separation layer 1502 is too thin. Particularly in a large-screen active matrix display device, there is a high possibility of receiving such damage, and there is a problem such as a decrease in yield.

Further, for the liquid crystal or the organic EL used as the display unit, the plastic used as the transfer destination substrate 1507 easily permeates moisture and oxygen, so that the deterioration becomes remarkable. Therefore, it is necessary to form an inorganic gas barrier layer or the like on the resin substrate to block moisture and oxygen as much as possible.

As described above, conventionally, it has been difficult to obtain an active matrix type display device which can be formed with a high yield by using a lightweight resin substrate.

[0017]

SUMMARY OF THE INVENTION The present invention is an active matrix type in which a thin glass layer in which an active element is formed and thinned is attached to a lightweight resin substrate so as not to cause cracks. An object is to provide a display device and a manufacturing method thereof.

[0018]

Therefore, according to the present invention, there is provided a resin substrate having a recess on one surface and a wall surrounding the recess, and a notch provided at least at one position of the wall,
A thin glass layer adhered to the depressions of the resin substrate via an adhesive layer, active elements provided in an array on the thin glass layer, and active elements provided on the thin glass layer and driven by the active elements to display each pixel There is provided an active matrix type display device comprising a display unit capable of performing the display and a counter substrate provided on the display unit.

Further, according to the present invention, a resin substrate having a U-shaped convex portion on three sides of the outer periphery of one surface and a concave portion inside thereof is bonded to the concave portion of the resin substrate via an adhesive layer. Thin glass layer, active elements provided in an array on the thin glass layer, a display unit provided on the thin glass layer and driven by the active element for each pixel, and a counter provided on the display unit Provided is an active matrix type display device comprising a substrate.

The present invention also includes a resin substrate, a thin glass layer adhered on the resin substrate via an adhesive layer, and a protective member adhered around the thin glass layer on the resin substrate via the adhesive layer. An array of active elements provided on the thin glass layer in an array, a display section provided on the thin glass layer and driven by the active elements and capable of displaying each pixel, and a counter substrate provided on the display section. Provided is an active matrix type display device characterized in that a protective member is provided with a notch at least at one location.

According to the present invention, the resin substrate, the thin glass layer adhered on the resin substrate via the adhesive layer, and the three sides around the thin glass layer on the resin substrate are adhered via the adhesive layer. A protective member, active elements provided in an array on the thin glass layer, a display section provided on the thin glass layer and driven by the active elements and capable of displaying each pixel, and a counter substrate provided on the display section An active matrix type display device characterized by comprising:

Further, according to the present invention, a step of forming active elements in an array on a glass substrate, a step of thinning the glass substrate on which the active elements are formed into a thin glass layer, and a depression on one surface of the resin substrate. A step of forming a wall surrounding the recess and a notch provided in at least one location of the wall, a step of bonding the thin glass layer to the recess of the resin substrate via an adhesive layer, and a thin glass layer And a counter substrate are opposed to each other to form a display portion driven by an active element and capable of displaying each pixel, and a method of manufacturing an active matrix type display device.

Further, according to the present invention, a step of forming active elements in an array on a glass substrate, a step of thinning the glass substrate on which the active elements are formed into a thin glass layer, and an outer periphery of one surface of the resin substrate. A step of forming a U-shaped convex portion on three sides and a concave portion inside thereof, and a step of adhering the thin glass layer to the concave portion of the resin substrate via an adhesive layer,
And a thin glass layer and a counter substrate are opposed to each other to form a display portion driven by active elements and capable of displaying for each pixel, thereby providing a method for manufacturing an active matrix type display device.

Further, according to the present invention, a step of forming active elements in an array on a glass substrate, a step of thinning the glass substrate on which the active elements are formed into a thin glass layer, and a thin glass layer on the resin substrate. The step of adhering through the adhesive layer, the step of adhering the protective member around the thin glass layer on the resin substrate through the adhesive layer, and the thin glass layer and the counter substrate are opposed to each other and driven by the active element. And a step of forming a display portion capable of displaying for each pixel, wherein the protective member is provided with a notch at least at one location, and a method for manufacturing an active matrix type display device is provided.

Further, according to the present invention, a step of forming active elements in an array on a glass substrate, a step of thinning the glass substrate on which the active elements are formed into a thin glass layer, and a thin glass layer on a resin substrate. The step of adhering through the adhesive layer, the step of adhering the protective member to the three sides of the thin glass layer on the resin substrate through the adhesive layer, the thin glass layer and the counter substrate are opposed to each other, and the active element And a step of forming a display unit capable of displaying for each pixel driven by the above method, and a method for manufacturing an active matrix type display device.

[0026]

Embodiments of the present invention will be described in detail below with reference to the drawings, but the present invention is not limited to these embodiments.

(First Embodiment) First, a first embodiment of the present invention will be described. 1A and 1B are views showing an active matrix display device of the present embodiment. FIG. 1A is a plan view, FIG. 1B is a sectional view taken along line AA ′, and FIG. 1C is BB ′.
FIG. 2 to 6 are cross-sectional views showing steps of the active matrix type display device of this embodiment. FIG. 7 is a cross-sectional view showing the element structure of the active matrix display device of this embodiment.

As shown in FIG. 1, the active matrix display device of the present embodiment has a recess 109 on one surface and a wall surrounding the recess 109, and four notches 108 provided in this wall. An active element circuit region having a resin substrate 107, a thin glass layer 105 adhered to the depressions 109 of the resin substrate 107 via an adhesive layer 106, and active elements arranged in an array on the thin glass layer 105. And 102.

In this embodiment, one surface of the resin substrate 107 has the recess 109 and the surrounding wall, and the recess 1
There is a thin glass layer 105 in which the active element circuit region 102 is formed, and a notch 108 is formed in a wall provided around the thin glass layer 105. With this configuration, the thin glass layer 105 can be bonded to the resin substrate 107 via the adhesive layer 106 without applying a large stress to the thin glass layer 105 while protecting the thin glass layer 105 from being cracked or the like. Further, when air bubbles or the like enter between the thin glass layer 105 and the resin substrate 107 at the time of bonding, the notch 1
Air bubbles can easily escape from 08.

Next, a method of manufacturing the active matrix type display device of this embodiment will be described with reference to FIGS.

As shown in FIG. 2, an active element circuit region 102 having a TFT array using a low temperature polysilicon as an active layer and a peripheral driver circuit is formed on a glass substrate 101 made of alkali-free glass having a thickness of about 0.7 mm.
To form.

As shown in FIG. 3, the side of the glass substrate 101 on which the active element circuit region 102 is formed is adhered to the intermediate substrate 103 made of glass, resin or the like via the adhesion / peel layer 104. As the adhesion / peel-off layer 104, a water-soluble photo-curable adhesive, a wax or a hot-melt adhesive that becomes soft by heating or cooling, or the like can be used.

As shown in FIG. 4, the glass substrate 101 is polished by a method such as mechanical polishing, chemical polishing, or mechanical chemical polishing to form a thin glass layer 105. The thickness of the thin glass layer 105 is preferably about 150 μm or less. When the thickness of the thin glass layer 105 is larger than about 150 μm, the thin glass layer 105 is likely to be broken when stress is applied by bending or the like after the active matrix type display device is completed. Further, the thickness of the thin glass layer 105 is preferably about 100 μm or less. In order to enable the thin glass layer 105 to be used as a moisture or oxygen barrier layer, the thin glass layer 105 preferably has a thickness of about 1 μm or more.

As shown in FIG. 5, the thin glass layer 105 adhered to the intermediate substrate 103 is adhered to the intermediate substrate 103 via the adhesive layer 106 on the resin substrate 107 having the recess 109 and the wall surrounding the recess 109. The size of the recess 109 is the thin glass layer 1
It is provided so as to correspond to the size of 05, and at least one notch 108 is provided on the wall around the recess 109 as shown in FIG. By providing a plurality of notches 108, the adhesive layer 10 between the thin glass layer 105 and the resin substrate 107 is formed.
In the present embodiment, one notch 108 is provided near the center of each side because bubbles easily escape when 6 enters. The size of the recess 109 and the size of the thin glass layer 105 do not match, and the wall around the recess 109 and the thin glass layer 1
A slight gap may be provided between the resin substrate 107 and the thin glass layer 105 so that the resin substrate 107 and the thin glass layer 105 adhere well to each other. The depth of the recess 109 and the thickness of the thin glass layer 105 are about the same, or the recess 10
It is preferable to increase the depth of 9. The thin glass layer 105 can be sufficiently protected because the thin glass layer 105 is embedded in the recess 109 by making the depth approximately the same or making the depth of the recess 109 large. Thin glass layer 10
If the depth of the recess 109 is set to be larger than the thickness of 5, it becomes difficult to take out the wiring from the signal line driving circuit or the scanning line driving circuit to the outside of the substrate, which is not preferable. Also,
The width of the wall around the recess 109 is about 1 mm or more and 5 mm
The following is preferable. If it is smaller than about 1 mm, it may not be enough to protect the thin glass layer 105, and if it is larger than about 5 mm, the size of the element circuit region 102 is smaller than the size of the resin substrate 107. Because it will be.

As the resin substrate 107, polyether sulfone (PES), polyallyl ether nitrile (PES)
EN), polyethylene terephthalate (PET) and the like can be used, but not limited thereto. Of these, PES and the like are particularly preferable because they can be easily processed such as forming the recess 109. Also, the adhesive layer 10
As for 6, the one having lower viscosity is the thin glass layer 105.
It is preferable that air bubbles do not easily enter between the resin substrate 107 and the resin substrate 107.

As the method of forming the recess 109, the peripheral wall thereof, and the notch provided in the wall in the resin substrate 107, the injection molding method or the method of heating a substrate having a uniform thickness to press the machine is used. It is possible to use a method of pressing with, a method of forming a die having a desired shape and pouring the material of the substrate into the die.

As shown in FIG. 6, the adhesive / peeling layer 10 is irradiated with ultraviolet rays from the side of the intermediate substrate 103 or by heating.
The adhesive property of No. 4 is reduced and then peeled. And the depression 10
The thin glass layer 10 in which the active element circuit region 102 is formed on the resin substrate 107 having the notch 108 on the wall and the wall 9 around the active element circuit region 9 via the adhesive layer 106.
5 is bonded.

Next, an example of an element structure that can be used in the active matrix type display device of this embodiment will be described with reference to FIG. In FIG. 7, the display device has only two pixels, but in actuality, it has a matrix shape in which a large number of pixels are provided vertically and horizontally when viewed from the display surface.

With respect to the structure of FIG. 7, different from FIG. 1 above the thin glass layer 105 will be described.

As shown in FIG. 7, a first undercoat insulating film 1001 and a second undercoat insulating film 1002 are laminated on the thin glass layer 105 to form an active layer 100.
4 and the source / drain regions 1005 are provided with a polysilicon film 1003 for each pixel. A gate insulating film 1006 is provided on the entire surface of the gate insulating film 1006.
A gate electrode 1007 is provided on the region corresponding to the active layer 1004 on 06. An interlayer insulating film 1008 is provided on the entire surface of the gate electrode 1007, and a source electrode 1009 and a drain electrode 1010 connected to the source / drain region 1005 through contact holes are provided thereon. Source electrode 1009 and drain electrode 101
Wirings such as scanning lines and signal lines 1012 are provided in the same layer as 0. A passivation film 1011 is provided on the entire surface thereof, and a pixel electrode 1013 connected to the drain electrode 1010 via a contact hole is provided on the passivation film 1011. Liquid crystal layer 101
Counter substrate 101 having counter electrode 1014 formed via 6
7 is provided. In addition, the counter substrate 1017 and the resin substrate 1
A seal 1015 seals the gap between 07 and 07.

A method of manufacturing an element having such a structure will be described.

First, a first undercoat insulating film 1001 and a second undercoat insulating film 1002 are formed on the glass substrate 101. The first undercoat insulating film 1001 is made of a silicon nitride film and has a thickness of about 500 nm.
The second undercoat insulating film 1002 is made of a silicon oxide film and has a thickness of about 100 nm. These undercoat insulating films may be a single layer or may use another material. The film thickness is preferably about 100 to 500 nm.

An active layer 1004 and a source / drain region 1 are formed on the second undercoat insulating film 1002 later.
Amorphous silicon to be 005 is formed to have a film thickness of about 50 nm, crystallized by excimer laser annealing to form a polysilicon layer 1003, and then patterned. As a crystallization method, in addition to simple laser irradiation, there is also a technique of forming a laser irradiation intensity distribution to grow crystals in a plane to increase the grain size, or a method of crystallization at elevated temperature without using a laser. Good. In the temperature-rising crystallization, a method of crystallizing using a metal such as Ni can be used. The crystal grain size may be from a relatively small grain size of about 0.1 μm to 10 μm or more to a large grain size close to a single crystal, or may be one in which lattices are continuously connected at grain boundaries. The source / drain regions 1005 are formed by introducing n-type and p-type impurities by ion doping, ion implantation with mass separation, or the like. After forming a gate electrode described later, a self-aligned structure using the gate electrode as a mask may be applied, and a low-concentration doping region may be formed between the high-concentration source / drain region 1005 and the active layer 1004. A sandwiched LDD structure may be applied.

Next, a silicon oxide film is formed over the entire surface of the gate insulating film 1006 by a plasma CVD method or the like so as to have a film thickness of about 100 nm.

Next, in the region corresponding to the active layer 1004,
The gate electrode 1007 is formed using a metal or alloy such as Mo, MoW, MoTa, Al, or Al—Cu, or highly doped silicon to have a thickness of about 250 nm.

An interlayer insulating film 1008 having a thickness of about 400 nm is formed on the entire surface of the gate electrode 1007 by using a silicon oxide film or a laminated film of a silicon oxide film and a silicon nitride film.
To form.

A source electrode 1009 and a drain electrode 1010, which are provided with through holes in the gate insulating film 1006 and the interlayer insulating film 1008 and are connected to the source / drain regions 1005, respectively, are formed on the interlayer insulating film 1008 by Mo,
Metals and alloys such as MoW, MoTa, Al and Al-Cu,
Alternatively, it is formed using highly-doped silicon or the like.

Wirings such as scanning lines and signal lines 1012 are formed in the same layer as the source electrode 1009 and the drain electrode 1010, using the same conductive material as described above.

After forming these electrodes and wirings, a passivation film 1011 is formed to a thickness of about 500 nm by a plasma CVD method using a silicon nitride film or the like.

The pixel electrode 101, which is connected to the drain electrode 1010 through the through hole formed in the passivation film 1011 on the passivation film 1011.
3 is provided. The pixel electrode 1013 is a color filter.
In the case of adopting an on array (COA) structure or a transmissive type, a transparent conductive film such as ITO may be used. Further, when the reflection type is used, a metal having a high reflectance such as Al or Ag can be used.

On the counter substrate 1017 made of resin or the like, IT
The counter electrode 1014 is formed using a transparent conductive film such as O. The surface of the counter substrate 1017 on which the counter electrode 1014 is formed and the surface of the resin substrate 107 on which the thin glass layer 105 on which the element circuit region is formed are attached are opposed to each other and sealed with a seal 1015. . Liquid crystal is injected as a display unit between these substrates to form a liquid crystal layer 1016, and the active matrix display device of this embodiment is completed.

In the active matrix type display device of the present embodiment, the element circuit region is formed on a heat-resistant substrate such as a non-alkali glass substrate, and then the substrate is thinned and bonded to a lightweight resin substrate. Then, on the resin substrate 107,
A recess 109 and a wall provided around the recess 109 are formed, and at least one notch is provided in the wall, and the thin glass layer 105 is bonded to the recess 109 via the adhesive layer 106. Then, the glass substrate is thinned to form the thin glass layer 105.
However, in this embodiment, the thin glass layer 105 is fitted in the recess 109, so that the resin substrate 107 is further provided around the end of the thin glass layer 105. Therefore, the thin glass layer 105 is protected. Therefore, an active matrix type display device using the lightweight resin substrate 107 can be obtained. When the active element is formed directly on the resin substrate 107,
Although there is a possibility that water, oxygen, etc. may pass through, the resin substrate 10
Since the thin glass layer 105 is provided on the adhesive layer 106 via the adhesive layer 106, the thin glass layer 105 serves as a moisture or gas barrier layer.

Further, if air bubbles enter when the thin glass layer 105 is bonded to the recess 109 of the resin substrate 107 via the adhesive layer 106, the recess 1 is formed on the side surface of the thin glass layer 105.
09 has a peripheral wall, and the adhesive layer 106 is the resin substrate 1
Since it also enters between the wall of 07 and the thin glass layer 105,
It becomes difficult for these bubbles to escape. When an active matrix display device is completed with bubbles, the refractive index of light differs between the region containing bubbles and the region not containing bubbles. Then, it becomes impossible to form a transmissive display device.
There is a possibility that cracks may occur starting from the area containing the bubbles. However, in the present embodiment, the notch 1
Since 08 is provided, even if there is a wall of the resin substrate 107 around the recess 109 to protect the thin glass layer 105, bubbles easily escape from the notch 108, which is preferable. In the present embodiment, the number of notches 108 is four, but the number is not limited to this, and at least one,
It is sufficient if bubbles can escape. Further, the position of the notch 108 need not be the center of each side. Since it may be used as a transmissive display device, it is not preferable to make a path for escape of bubbles in the substrate surface in a direction perpendicular to the substrate surface.

In the present embodiment, the thin glass layer 105
The resin substrate 107 and the resin substrate 107 are adhered to each other via the adhesive layer 106. Since the thin glass layer 105 that has been thinned has low strength, it is not possible to adhere them by applying a large force. Therefore, even if bubbles enter between them, they cannot be escaped by strongly pressing them in order to escape, but the provision of the notch 108 allows the bubbles to escape.

In this embodiment, the step of thinning the glass substrate 101 to form the thin glass layer 105 is performed by the adhesion / peel layer 1
It was performed after being bonded to the intermediate substrate 103 via 04,
It is not limited to this. For example, the glass substrate 1
01 is bonded and fixed to the counter substrate 1017,
The thin glass layer 105 may be formed by thinning the glass substrate 101.

In this embodiment, an active matrix type display device in which one pixel is composed of one switching transistor, a pixel electrode, an auxiliary capacitor and the like is shown. However, in addition to this, a memory circuit (flip-flop) is provided for each pixel. ; SRAM type, storage capacity and driver transistor: DRAM
Type) may be provided to reduce power consumption. Further, as the control circuit, a control circuit, a CPU, a memory, and the like may be integrally formed in addition to the driver circuit for the scan line and the signal line. It may be considered that the active element circuit region 102 includes these circuits and display electrodes. Microfabrication is essential in these circuits, but since they are formed on a non-alkali glass substrate, the substrate is less likely to be deformed, and processing precision is high, and high performance and highly integrated circuits can also be applied.

In the active matrix type display device of this embodiment, as shown in FIG. 7, the side on which the element circuit region of the active matrix substrate is formed is combined with a counter substrate provided with a counter electrode, and the periphery is fixed by a seal. A cell is formed by the above method, and liquid crystal is injected into the cell to form a liquid crystal display device, but the present invention is not limited to this. For example, even in the case of a liquid crystal display device, when TN liquid crystal or the like is used as the liquid crystal, an alignment film may be formed, and a spacer or the like may be provided between both substrates to keep a gap. In addition, the active element circuit region is configured as a current drive type peripheral driver circuit, a configuration using a selection switch with 2 to 6 transistors, a current supply drive transistor, a transistor characteristic variation correction circuit, and the like in the display unit, and the like. Alternatively, an organic EL display device using an organic EL element may be formed. In addition to this, in the present embodiment, a pair of comb-shaped pixel electrodes are provided on the element circuit region side without the counter electrode even in the case where an electrophoretic element is used as a display section or when liquid crystal is used, in the display surface direction. It may be applied to a method of driving a liquid crystal by applying an electric field to the.

(Second Embodiment) Next, a second embodiment will be described with reference to FIG. FIG. 8 is a plan view of the active matrix type display device according to the second embodiment. Regarding the present embodiment, only the points different from the first embodiment will be described, and the similar portions will be omitted.

In the active matrix display device of this embodiment, the notch 201 is provided at the intersection of the four sides of the resin substrate 107, that is, at the apex.

When the thin glass layer 105 and the resin substrate 107 are bonded to each other via the adhesive layer 106, after bubbles have entered, the bubbles are likely to converge on the apex of the thin glass layer 105. Also,
If air bubbles are present at this apex, peeling between the thin glass layer 105 and the resin substrate 107 is likely to occur. However, in this embodiment, not only the same effect as in the first embodiment can be obtained, but also because the notch 201 is provided at the apex, bubbles easily escape and peeling hardly occurs. .

(Third Embodiment) Next, a third embodiment will be described with reference to FIG. FIG. 9 is a plan view of the active matrix type display device according to the third embodiment. Regarding the present embodiment, only the points different from the first embodiment will be described, and the similar portions will be omitted.

The active matrix type display device of the present embodiment is similar to the first embodiment in that the thin glass layer 105 is fitted into the recess of the resin substrate 107, but the recess of the resin substrate 107 is not four sides. The third embodiment is different from the first embodiment in that the three sides are covered with a U-shaped convex portion. That is, the resin substrate 107 has the U-shaped convex portion 302 and the concave portion 301 inside thereof, and the thin glass layer 105 has the concave portion 301.
It is adhered on the upper surface via the adhesive layer 106.

Also in this embodiment, the thin glass layer 105 is used.
Since is surrounded by the U-shaped three-sided convex portions 302, the strength is increased, and bubbles can escape from one side. Note that, also in this embodiment, the protrusion 302 may be further provided with a notch.

(Fourth Embodiment) Next, a fourth embodiment will be described with reference to FIG. FIG. 10 is a sectional view of the active matrix type display device according to the fourth embodiment. Regarding the present embodiment, only the points different from the first embodiment will be described, and the similar portions will be omitted.

In the active matrix type display device of the present embodiment, the protection member 401 is provided in the shape of a frame on the outer periphery on one surface of the resin substrate 107, and the protection member 401 is not formed on the resin substrate 107. The inner side becomes a hollow. The protective member 401 has at least one notch.

In this embodiment, PEN or PE is formed on the outer periphery of the resin substrate 107 without forming a depression in the resin substrate 107.
A point where the protective member 401 made of S, PET, polycarbonate (PC) or the like is adhered using an adhesive (not shown) such as an ultraviolet curable type or a thermosetting type made of an acrylic resin, an epoxy resin, an aryl resin or the like. Only the manufacturing method of the active matrix type display device of the first embodiment is different. As the adhesive, the same adhesive as the adhesive layer 106 for adhering the thin glass layer 105 and the resin substrate 107 may be used. Also, the first
Similar to the embodiment of FIG.
The width of the adhesive surface to be adhered to, that is, the width of the wall is about 1 mm to 5 mm, and the depth of the recess formed by the side surface of the protective member 401 and the surface of the resin substrate 107 is the same as or smaller than the thickness of the thin glass layer 105. It is preferably a little deeper.

Also in this embodiment, the same effect as that of the first embodiment can be obtained. In addition, the resin substrate 104
It is difficult to provide a uniform depth of depressions when forming the depressions on the substrate surface, but in the present embodiment, since the processing of the substrate surface of the resin substrate 104 is not necessary, the active matrix with a higher yield can be obtained. A mold display device can be formed.

(Fifth Embodiment) Next, a fifth embodiment will be described with reference to FIG. FIG. 11 is a cross-sectional view of the active matrix type display device according to the fifth embodiment. Regarding the present embodiment, only the points different from the first embodiment will be described, and the similar portions will be omitted.

In the active matrix type display device of this embodiment, the protection member 501 is provided on the side surface of the resin substrate 107 instead of providing the depression on the resin substrate.
To form a wall, and the wall and the surface of the resin substrate 107 form a depression. The protective member 501 has at least one notch.

In the present embodiment, the protective member 501 and the side surface of the resin substrate 107 are adhered to the side surface of the resin substrate 107 and the upper portion thereof using the same adhesive and protective material as those in the fourth embodiment. Also in this embodiment, the same effect as that of the first and fourth embodiments can be obtained.

(Sixth Embodiment) Next, a sixth embodiment will be described with reference to FIG. FIG. 12 is a sectional view of the active matrix type display device according to the sixth embodiment. Regarding the present embodiment, only the points different from the first embodiment will be described, and the similar portions will be omitted.

In the active matrix type display device of the present embodiment, the protection member 601 is provided so as to surround the side surface of the resin substrate 107, instead of providing the resin substrate with a depression. The protective member 601 has a flat surface that is continuous with the resin substrate 107 on one substrate surface and a flat surface that is continuous with the resin substrate 107 on the other substrate surface and a wall that makes the flat surface a dent on the outer periphery. Form the resin substrate 107
It is provided so as to surround. Further, at least one notch is provided in the portion which becomes the wall of the protection member 601.

In this embodiment, the protective member 501 and the side surface of the resin substrate 107 are adhered to the side surface of the resin substrate 107 by using the same adhesive or the same material as the protective member as in the fourth embodiment. Also in this embodiment, the same effect as that of the first and fourth embodiments can be obtained.

(Seventh Embodiment) Next, a seventh embodiment will be described with reference to FIG. FIG. 13 is a cross-sectional view of the active matrix type display device according to the seventh embodiment. Regarding the present embodiment, only the points different from the first embodiment will be described, and the similar portions will be omitted.

In the active matrix display device of the present embodiment, the resin substrate is not provided with the depression, but the protective member 701 is provided in a frame shape on the outer periphery on one surface of the resin substrate 107, and the protective member 701 is provided on the wall. The inner side becomes a hollow. The protective member 701 has at least one notch. In addition, on the thin glass layer 105 adhered to the inside of the first protective member 701 via the adhesive layer 106, the upper surface of the outer periphery of the thin glass layer 105 is covered from the outermost periphery of the first protective member 701. It has a second protective member 702 provided in a frame shape.

Also in this embodiment, the same effect as that of the first embodiment can be obtained. Further, since the second protective member 702 is provided on the outer circumferences of the first protective member 701 and the thin glass layer 105, the upper surface of the thin glass layer 105 can be protected.

(Eighth Embodiment) Next, an eighth embodiment will be described with reference to FIG. FIG. 14 is a sectional view of the active matrix type display device according to the eighth embodiment. Regarding the present embodiment, only the points different from the first embodiment will be described, and the similar portions will be omitted.

The active-matrix display device of this embodiment has a recess 801 in the resin substrate 107 and a wall surrounding the recess 801, and at least one notch is formed in this wall as in the first embodiment. There is an adhesive layer 1 in the depression 801.
The first embodiment is that the thin glass layer 105 is adhered via 06, and the protective member 802 is provided in a frame shape so as to cover the outermost surface of the resin substrate 107 and the upper surface of the outer surface of the thin glass layer 105. Different from the form.

In this embodiment, the effects of both the first and seventh embodiments can be obtained.

The fourth to eighth embodiments have been described using only the sectional views, but in these embodiments, as shown in the first to third embodiments, respectively. Any combination may be used as those having various notches. That is, the fourth to eighth embodiments
In the embodiment of the present invention, at least one notch is provided somewhere in the wall around the recess as in the first and second embodiments, or as in the third embodiment, three sides are provided. Assuming that the wall covered with the U-shape has a recess inside, a thin glass layer may be fitted into the recess.

In addition to the first embodiment, a structure is shown in which a thin glass layer on which an active element is formed is simply attached to a resin substrate, and a display portion on the thin glass layer is opposed to a display portion provided on the display portion. The counter substrate on which the electrodes are formed is omitted.

Although the notch is provided in each of the above-described embodiments, the shape does not have to be the one described above as long as a path through which bubbles escape can be formed when bubbles enter the wall. The same effect can be obtained by providing a through hole or a notch that does not penetrate the wall.

[0083]

As described in detail above, according to the present invention,
It is possible to provide an active matrix type display device capable of forming a thin glass layer in which an active element is formed and thinning it on a lightweight resin substrate without causing a crack, and a manufacturing method thereof.

[Brief description of drawings]

FIG. 1A is a plan view showing an active matrix display device according to a first embodiment of the present invention,
(B) is sectional drawing between AA ', (c) is sectional drawing between BB'.

FIG. 2 is a cross-sectional view showing a manufacturing process of the active matrix display device according to the first embodiment of the present invention.

FIG. 3 is a cross-sectional view showing a manufacturing process of the active matrix display device according to the first embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a manufacturing process of the active matrix display device according to the first embodiment of the present invention.

FIG. 5 is a cross-sectional view showing the manufacturing process of the active matrix display device according to the first embodiment of the invention.

FIG. 6 is a cross-sectional view showing the manufacturing process of the active matrix display device according to the first embodiment of the invention.

FIG. 7 is a cross-sectional view showing an element configuration of the active matrix display device according to the first embodiment of the present invention.

FIG. 8 is a plan view showing an active matrix display device according to a second embodiment of the present invention.

FIG. 9 is a plan view showing an active matrix type display device according to a third embodiment of the present invention.

FIG. 10 is a sectional view showing an active matrix display device according to a fourth embodiment of the present invention.

FIG. 11 is a cross-sectional view showing an active matrix display device according to a fifth embodiment of the present invention.

FIG. 12 is a sectional view showing an active matrix type display device according to a sixth embodiment of the present invention.

FIG. 13 is a sectional view showing an active matrix display device according to a seventh embodiment of the present invention.

FIG. 14 is a sectional view showing an active matrix display device according to an eighth embodiment of the present invention.

15 (a), (b), (c), (d), (e)
8A and 8B are cross-sectional views showing a manufacturing process of a conventional active matrix display device.

[Explanation of symbols]

101 ... Glass substrate 102 ... Element circuit area 103, 1505 ... Intermediate substrate 104, 1504 ... Adhesion / peeling layer 105 ... Thin glass layer 106, 1506 ... Adhesive layer 107 ... Resin substrate 108, 201 ... Notches 109, 801 ... hollow 301 ... Recess 302 ... convex portion 401, 501, 601, 802 ... Protective member 701 ... First protective member 702 ... Second protective member 1001 ... First undercoat insulating film 1002 ... second undercoat insulating film 1003 ... Polysilicon layer 1004 ... Active layer 1005 ... Source / drain region 1006 ... Gate insulating film 1007 ... Gate electrode 1008 ... Interlayer insulating film 1009 ... Source electrode 1010 ... Drain electrode 1011 ... passivation film 1012 ... Scanning line / signal line 1013 ... Pixel electrode 1014 ... Counter electrode 1015 ... Seal 1016 ... Liquid crystal layer 1017 ... Counter substrate 1501 ... Element formation substrate 1502 ... Separation layer 1503 ... element 1507 ... Transfer destination substrate

Continuation of front page (51) Int.Cl. ⁷ identification code FI theme code (reference) // H05B 33/14 H05B 33/14 A (72) Inventor Yutaka Onozuka 1 Komukai Toshiba-cho, Kawasaki-shi, Kanagawa Incorporated company Toshiba Research & Development Center (72) Inventor Takeshi Hioki 1 Komukai Toshiba Town, Komu-ku, Kawasaki City, Kanagawa Prefecture Incorporated Toshiba Research & Development Center (72) Inventor Masahiko Akiyama Komukai, Kawasaki City, Kanagawa Prefecture Toshiba Town No. 1 F-term in the Research and Development Center of Toshiba Corporation (reference) 2H089 HA40 JA10 KA11 QA11 QA12 TA01 TA06 TA09 2H092 JA25 JA34 JA37 JA41 JB22 JB31 KA18 NA29 PA01 3K007 BB01 CA01 CA05 DB03 FA00 FA02 GA00 5C09 4 A47AA15A43 CA19 CA24 DA12 DA13 EA04 EB01 FA01 FA02 FB01 FB02 FB15 GB10 5G435 AA17 AA18 BB05 BB12 CC09 EE37 HH14 HH20 KK05 LL07

Claims (8)

[Claims] 1. A resin substrate having a recess on one surface and a wall surrounding the recess, and a notch provided in at least one location of the wall, and an adhesive layer interposed on the recess of the resin substrate. A thin glass layer adhered together, an active element provided in an array on the thin glass layer, a display unit provided on the thin glass layer and driven by the active element and capable of displaying for each pixel, An active matrix display device comprising: a counter substrate provided on a display portion. 2. A resin substrate having a U-shaped convex portion on three sides of the outer periphery of one surface and a concave portion inside the convex portion, and the resin substrate is adhered to the concave portion of the resin substrate through an adhesive layer. A thin glass layer, active elements provided in an array on the thin glass layer, a display unit provided on the thin glass layer and driven by the active element and capable of displaying for each pixel, and on the display unit An active matrix display device comprising: a counter substrate provided. 3. A resin substrate, a thin glass layer bonded to the resin substrate via an adhesive layer, and a protective member bonded to the periphery of the thin glass layer on the resin substrate via the adhesive layer. An active element provided in an array on the thin glass layer, a display section provided on the thin glass layer and driven by the active element and capable of displaying for each pixel, and a counter substrate provided on the display section And a cutout is provided at least at one place in the protection member. 4. A resin substrate, a thin glass layer bonded onto the resin substrate via an adhesive layer, and three peripheral sides of the thin glass layer on the resin substrate bonded via an adhesive layer. A protective member, active elements provided in an array on the thin glass layer, a display section provided on the thin glass layer and driven by the active element for each pixel, and provided on the display section An active matrix type display device. 5. A step of forming active elements in an array on a glass substrate, a step of thinning the glass substrate on which the active elements are formed into a thin glass layer, and a depression on one surface of a resin substrate. A step of forming a wall surrounding the recess and a notch provided in at least one location of the wall, a step of adhering the thin glass layer to the recess of the resin substrate via an adhesive layer, A thin glass layer and a counter substrate are opposed to each other to form a display unit driven by the active element and capable of displaying for each pixel, and a method for manufacturing an active matrix type display device. 6. A step of forming active elements in an array on a glass substrate, a step of thinning the glass substrate on which the active elements are formed into a thin glass layer, and a step of forming an outer periphery of one surface of a resin substrate. U-shaped protrusions on three sides,
A step of forming a concave part inside thereof, a step of adhering the thin glass layer to the concave part of the resin substrate via an adhesive layer, and a step of adhering the thin glass layer and a counter substrate to each other to form the active element. And a step of forming a display unit capable of displaying each pixel by driving the active matrix type display device. 7. A step of forming active elements in an array on a glass substrate, a step of thinning the glass substrate on which the active elements are formed into a thin glass layer, and a step of forming the thin glass layer on a resin substrate. The step of adhering through the adhesive layer, the step of adhering the protective member around the thin glass layer on the resin substrate through the adhesive layer, the thin glass layer and the counter substrate are opposed to each other, and the active And a step of forming a display portion that is driven by an element and is capable of displaying for each pixel, wherein the protective member is provided with a notch at least at one location. 8. A step of forming active elements in an array on a glass substrate, a step of thinning the glass substrate on which the active elements are formed into a thin glass layer, and a step of forming the thin glass layer on a resin substrate. Bonding via an adhesive layer, bonding the protective member to the three sides of the thin glass layer on the resin substrate via the adhesive layer, and facing the thin glass layer and the counter substrate. And a step of forming a display unit which is driven by the active element and can display each pixel, the method of manufacturing an active matrix type display device.