JP2005308849A - Thin film device, manufacturing method for same, liquid crystal display apparatus and electroluminescence display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve heat resistance and moisture resistance by using a substrate with flexural modulus of not more than 1 GPa. <P>SOLUTION: A thin film device 10 in which a thin film device layer 13 is formed on a plastic substrate (support substrate 11) with the flexural modulus of not more than 1 GPa or a thin film device 20 in which a thin film device layer 22 is formed on a support substrate 21 which is a compound substrate on which a plastic substrate 23 with the flexural modulus of not more than 1GPa and a glass substrate 24 are laminated together, are used for forming a liquid crystal display apparatus or an electroluminescence display apparatus. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a thin film device, a thin film device manufacturing method, a liquid crystal display device, and an electroluminescence display device that can be easily transferred onto an actual use substrate after being manufactured on a production substrate having high heat resistance.

  In recent years, thin film devices have been required to be thinner, lighter, and more robust due to the downsizing of equipment used. However, since a thin film device is manufactured in an environment of high temperature and vacuum, there are limitations on the substrate used for manufacturing. For example, in a liquid crystal display device using a thin film transistor, a quartz substrate that can withstand a temperature of 1000 ° C. and a glass substrate that can withstand a temperature of 500 ° C. are used. Although thinning of these substrates is also under consideration, as long as quartz substrates and glass substrates are used, the substrate size must be reduced in consideration of the decrease in substrate rigidity, thereby reducing productivity. . In addition, as the substrate becomes thinner, the robustness rapidly decreases, which is a practical problem. As described above, the performance required for the manufacturing substrate is different from the performance required for actual use. In addition, there is an attempt to manufacture a thin film transistor directly on a thin, lightweight, and robust plastic substrate, but the difficulty is high in terms of heat-resistant temperature.

  Therefore, a technique for transferring a thin film device formed on a production substrate having a high heat-resistant temperature to an actual use substrate has been studied. As a transfer method, a peeling layer is provided and a device is peeled off after the device is manufactured (for example, see Patent Document 1), or a glass substrate is removed by etching (for example, see Patent Document 2). Etc. are being considered.

  When removing the glass substrate by etching, it is possible to leave the glass without completely removing the glass substrate. However, in this case, if the thickness of the glass substrate is less than 300 μm, the impact resistance is low. In use, it is necessary to increase the impact resistance by attaching a plastic substrate.

Japanese Patent Laid-Open No. 10-125930 Japanese Patent Laid-Open No. 2003-68995

  When a thin film device is formed or transferred onto a plastic substrate, the thermal expansion coefficient of the thin film layer or partially remaining glass is different from that of the plastic substrate. Further, when the temperature is further raised in the warped state, a crack may be generated in the thin film layer or the partially remaining glass substrate, and the glass substrate may be destroyed. Similarly, the water absorption rate of the thin film layer or partially remaining glass substrate is different from that of the plastic substrate, so that it is warped when left in a high humidity environment. Or the thin film layer or the partially remaining glass substrate may crack. In order to solve these problems, a plastic substrate having a low expansion coefficient and low water absorption rate may be used. However, such a plastic substrate is opaque and is used for a display device such as a liquid crystal display device or an organic electroluminescence display device. There is a problem that it is inappropriate as a substrate.

  The thin film device of the present invention is characterized in that a thin film device layer is formed on a plastic substrate having a flexural modulus of 1 GPa or less.

  The thin film device of the present invention is characterized in that a thin film device layer is formed on a composite substrate in which a plastic substrate having a flexural modulus of 1 GPa or less and a glass substrate are bonded together.

  The method of manufacturing a thin film device according to the present invention includes forming a thin film device layer on a first substrate and then forming a second substrate on the thin film device layer via a first adhesive layer or a coating layer and a first adhesive layer. Bonding, a step of completely or partially separating or removing the first substrate by a step including at least one of a chemical treatment, a mechanical polishing treatment, and an ultraviolet irradiation treatment, and a first of the thin film device layer A thin film device comprising: a step of adhering a first substrate left on a side where a substrate is formed or a partially left substrate to a third substrate via a second adhesive layer; and a step of separating or removing the second substrate. In this manufacturing method, the most main feature is that a substrate having a flexural modulus of 1 GPa or less is used for the third substrate.

  The method of manufacturing a thin film device according to the present invention includes forming a thin film device layer on a first substrate and then forming a second substrate on the thin film device layer via a first adhesive layer or a coating layer and a first adhesive layer. Bonding, a step of completely or partially separating or removing the first substrate by a step including at least one of a chemical treatment, a mechanical polishing treatment, and an ultraviolet irradiation treatment, and a first of the thin film device layer A step of forming a third substrate by applying and curing a liquid resin on the side where the substrate is formed or the first substrate side which is partially left, and a step of separating or removing the second substrate; In the thin film device manufacturing method provided, the main feature is that a substrate having a flexural modulus of 1 GPa or less is used for the third substrate.

  The liquid crystal display device of the present invention is most characterized by using a thin film device in which a thin film device layer is formed on a plastic substrate having a flexural modulus of 1 GPa or less.

  The liquid crystal display device of the present invention uses a thin film device in which a thin film device layer is formed on a composite substrate in which a plastic substrate having a flexural modulus of 1 GPa or less and a glass substrate are bonded together.

  In the liquid crystal display device of the present invention, after forming a thin film device layer on the first substrate, the second substrate is bonded onto the thin film device layer via the first adhesive layer or the covering layer and the first adhesive layer. A step of completely or partially separating or removing the first substrate by a step including at least one of chemical treatment, mechanical polishing treatment, and ultraviolet irradiation treatment, and the first substrate of the thin film device layer comprises: A thin film device manufactured by the step of adhering the formed first or partially left first substrate to a third substrate via a second adhesive layer and the step of separating or removing the second substrate. In the liquid crystal display device used, the main feature is that a substrate having a flexural modulus of 1 GPa or less is used as the third substrate.

  In the liquid crystal display device of the present invention, after forming a thin film device layer on the first substrate, the second substrate is bonded onto the thin film device layer via the first adhesive layer or the covering layer and the first adhesive layer. A step of completely or partially separating or removing the first substrate by a step including at least one of chemical treatment, mechanical polishing treatment, and ultraviolet irradiation treatment, and the first substrate of the thin film device layer comprises: It is manufactured by a step of forming a third substrate by applying and curing a liquid resin on the side of the first substrate that has been formed or partially left, and a step of separating or removing the second substrate. In the liquid crystal display device using the thin film device, the most important feature is that a substrate having a flexural modulus of 1 GPa or less is used for the third substrate.

  The electroluminescence display device of the present invention is characterized by using a thin film device in which a thin film device layer is formed on a plastic substrate having a flexural modulus of 1 GPa or less.

  The electroluminescent display device according to the present invention is characterized by using a thin film device in which a thin film device layer is formed on a composite substrate in which a plastic substrate having a flexural modulus of 1 GPa or less and a glass substrate are bonded together. To do.

  In the electroluminescence display device of the present invention, after the thin film device layer is formed on the first substrate, the second substrate is formed on the thin film device layer via the first adhesive layer or the covering layer and the first adhesive layer. A step of bonding, a step of completely or partially separating or removing the first substrate by a step including at least one of chemical treatment, mechanical polishing treatment, and ultraviolet irradiation treatment, and the first substrate of the thin film device layer The thin film device manufactured by the step of bonding the first substrate left or partially left to the third substrate via the second adhesive layer and the step of separating or removing the second substrate In the electroluminescence display device using the above, the main feature is that a substrate having a flexural modulus of 1 GPa or less is used as the third substrate.

  In the electroluminescence display device of the present invention, after the thin film device layer is formed on the first substrate, the second substrate is formed on the thin film device layer via the first adhesive layer or the covering layer and the first adhesive layer. A step of bonding, a step of completely or partially separating or removing the first substrate by a step including at least one of chemical treatment, mechanical polishing treatment, and ultraviolet irradiation treatment, and the first substrate of the thin film device layer Manufactured by applying a liquid resin on the side where the substrate has been formed or the first substrate side that is partially left and then curing it, and forming the third substrate, and separating or removing the second substrate In the electroluminescence display device using the thin film device to be manufactured, the main feature is that a substrate having a flexural modulus of 1 GPa or less is used as the third substrate.

  In the thin film device of the present invention, a thin film device layer is formed on a plastic substrate having a bending elastic modulus of 1 GPa or less, or a thin film is formed on a composite substrate in which a plastic substrate having a bending elastic modulus of 1 GPa or less and a glass substrate are bonded together. Since the device layer is formed, the stress caused by the expansion of the plastic substrate due to the heat absorption and water absorption of the thin film device layer and the remaining glass substrate can be relieved, so the heat resistance and moisture resistance can be improved. There is an advantage that it can be planned.

  Since the thin film device manufacturing method of the present invention uses a substrate having a flexural modulus of 1 GPa or less as the third substrate or a composite substrate in which a plastic substrate having a flexural modulus of 1 GPa or less and a glass substrate are bonded together, the thin film device Since the stress caused by the expansion of the plastic substrate due to the heat absorption or water absorption of the device layer or the remaining glass substrate can be relieved, there is an advantage that heat resistance and moisture resistance can be improved.

  The liquid crystal display device of the present invention uses a thin film device in which a thin film device layer is formed on a plastic substrate having a flexural modulus of 1 GPa or less, or a plastic substrate having a flexural modulus of 1 GPa or less and a glass substrate are bonded together. Since a thin film device with a thin film device layer formed on a composite substrate is used, the stress caused by the plastic substrate stretching due to heat absorption and water absorption of the thin film device layer and the remaining glass substrate can be relieved. There is an advantage that improvement of moisture resistance and moisture resistance can be achieved.

  Since the liquid crystal display device of the present invention uses a substrate having a flexural modulus of 1 GPa or less as the third substrate or a composite substrate in which a plastic substrate having a flexural modulus of 1 GPa or less and a glass substrate are bonded together, the thin film device layer In addition, since the stress caused by the plastic substrate stretching due to heat absorption or water absorption of the remaining glass substrate can be relaxed, there is an advantage that heat resistance and moisture resistance can be improved.

  The electroluminescence display device of the present invention uses a thin film device in which a thin film device layer is formed on a plastic substrate having a flexural modulus of 1 GPa or less, or a plastic substrate having a flexural modulus of 1 GPa or less and a glass substrate are bonded. Since a thin film device with a thin film device layer formed on the combined composite substrate is used, the stress caused by the plastic substrate stretching due to heat absorption and water absorption of the thin film device layer and the remaining glass substrate can be relieved. There is an advantage that improvement of moisture and improvement of moisture resistance can be achieved.

  Since the electroluminescence display device of the present invention uses a substrate having a flexural modulus of 1 GPa or less as the third substrate or a composite substrate in which a plastic substrate having a flexural modulus of 1 GPa or less and a glass substrate are bonded together, the thin film device Since the stress caused by the plastic substrate stretching due to heat absorption or water absorption of the layer or the remaining glass substrate can be relaxed, there is an advantage that heat resistance and moisture resistance can be improved.

  The bending elastic modulus is 1 GPa or less for the purpose of relaxing heat stress and moisture resistance of the thin film device layer and the remaining glass substrate to improve the heat resistance and moisture resistance. This was realized by using the substrate.

  That is, as shown in FIG. 1A, the thin film device 10 is a thin film device that drives a display device (for example, a liquid crystal display device, an electroluminescence display device, etc.) on a support substrate 11 via, for example, an adhesive layer 12. The layer 13 (including the protective layer 14) is formed. As the support substrate 11, a plastic substrate having a flexural modulus of 1 GPa or less is used. Alternatively, as shown in FIG. 1B, the thin film device 20 is obtained by forming a thin film device layer 22 for driving a display device (for example, a liquid crystal display device, an electroluminescence display device, etc.) on a support substrate 21. The support substrate 21 is a composite substrate in which a plastic substrate 23 having a flexural modulus of 1 GPa or less and a glass substrate 24 are bonded together, and the thin film device layer 22 is formed on the glass substrate 24. The thickness of the glass substrate 24 is preferably 300 μm or less. When a glass substrate having a thickness exceeding 300 μm is used, the effect of using the plastic substrate 23 having a flexural modulus of 1 GPa or less cannot be found.

  As a material for the plastic substrate, a resin (plastic) having a flexural modulus of 1 GPa or less, such as an epoxy resin, a polymethyl methacrylate resin, a silicone resin, a urethane resin, a low density polyethylene resin, or a fluororesin can be used.

  Next, the reason why a plastic substrate having a bending elastic modulus of 1 GPa or less is used for the third substrate 127 will be described with reference to FIG. FIG. 2 shows the heat resistance of a thin film device transferred to a support substrate (third substrate) made of a plastic substrate having different bending elastic moduli, and is a relationship diagram between the heat resistant temperature of the thin film device and the bending elastic modulus of the third substrate. It is. The heat resistance indicates the upper limit of the temperature at which the substrate does not crack when it is heated with the substrate fixed so as not to warp.

  Usually, a thin film device (active substrate) used for a liquid crystal display device is required to have a heat resistant temperature of 100 ° C. or higher. As shown in FIG. 2, in order for the heat resistant temperature of the thin film device to be 100 ° C. or higher, the flexural modulus of the support substrate is required to be 1 GPa or lower. When the flexural modulus of the support substrate exceeds 1 GPa, the heat-resistant temperature of the thin film device becomes lower than 100 ° C., and a thin film device that gives sufficient reliability to the liquid crystal display device cannot be obtained. Further, as the bending elastic modulus is lowered, the heat resistant temperature rises, but cannot be raised above the heat resistant temperature specific to the resin constituting the support substrate, so that the heat resistant temperature is constant. For example, when an epoxy resin substrate is used as the support substrate, the heat resistance temperature of the epoxy resin is 250 ° C., and even if the flexural modulus is lowered, a heat resistance temperature of 250 ° C. or higher cannot be obtained. Note that the flexural modulus of the material varies somewhat depending on the temperature of the atmosphere. Therefore, the flexural modulus in a room temperature (for example, about 18 ° C. to 25 ° C.) environment, which is a normal environment where a liquid crystal display device is used, was used as a reference.

  On the other hand, an engineer plastic is generally used as a substrate for forming a thin film device, and these substrates have a flexural modulus exceeding 1 GPa. For example, according to page 119 of “Plastic Data Book” published by the Industrial Research Council, a polycarbonate substrate often used as an optical transparent substrate has a flexural modulus of 2.3 GPa, and a polyether sulfone substrate has a flexural modulus of 2. 6 GPa. When a thin film device is formed or transferred onto these substrates, the plastic substrate has high rigidity (proportional to the flexural modulus), so that the stress applied to the thin film device layer or partially left glass substrate becomes strong.

  Therefore, like the thin film devices 10 and 20 of the present invention, a plastic substrate having a bending elastic modulus at room temperature of 1 GPa or less is used for the supporting substrate 11 or a plastic substrate having a bending elastic modulus at room temperature of 1 GPa or less. By using the composite substrate in which the glass substrate 24 and the glass substrate 24 are bonded as the support substrate 21, warpage of the thin film devices 10 and 20 can be suppressed. The reason is that even if the plastic substrate expands or contracts due to heat or water absorption, the rigidity of the plastic substrate is weak, so the stress due to expansion and contraction can be relaxed, and the stress applied to the thin film device layers 13 and 22 or the glass substrate 24 becomes weak. Because. Therefore, in the thin film devices 10 and 20 of the present invention, there is an advantage that the heat resistance and moisture resistance can be improved.

  A thin film device manufacturing method, a thin film device and a liquid crystal display device according to a first embodiment of the present invention will be described with reference to FIGS. In this example, an active substrate for liquid crystal using a plastic substrate was produced.

First, a method for forming a thin film device layer will be described with reference to the schematic sectional view of FIG. As shown in FIG. 3, a protective layer 102 of the first substrate 101 is formed on the first substrate 101 at the time of subsequent etching with hydrofluoric acid. As the first substrate 101, a glass substrate having a thickness of about 0.4 mm to 1.1 mm, for example, 0.7 mm is used. A quartz substrate may be used instead of the glass substrate. The protective layer 102 is formed using a material that can withstand hydrofluoric acid. For example, a molybdenum (Mo) layer is used, and the protective layer 102 is formed to a thickness of, for example, 500 nm. Although the thickness of the molybdenum layer is 500 nm this time, there is no problem even if the thickness is appropriately changed as long as it can withstand hydrofluoric acid. The molybdenum protective layer 102 can be formed by sputtering, for example. Thereafter, the insulating layer 103 is formed. The insulating layer 103 is formed, for example, by forming a silicon oxide (SiO ₂ ) film to a thickness of 500 nm. The insulating layer 103 can be formed by, for example, a plasma CVD method.

  Next, general low-temperature polysilicon technology such as “2003 FPD Technology Encyclopedia” (published on March 25, 2003, p.166-183 and p.198-201), “'99 latest liquid crystal process technology” (Press Journal 1998, p. 53-59), “Flat Panel Display 1999” (Nikkei Business Publications, 1998, p. 132-139), etc. A thin film device layer including a TFT was formed by a thin film transistor (hereinafter referred to as TFT) process. An example of a method for forming the thin film device layer will be described below.

First, a conductive film for forming the gate electrode 104 was formed over the insulating layer 103 formed over the first substrate 101 with the protective layer 102 interposed therebetween. For example, a molybdenum (Mo) film having a thickness of 100 nm was used as the conductive film. As a method for forming the molybdenum film, for example, a sputtering method was used. Then, the conductive film was formed on the gate electrode 104. The gate electrode 104 was formed by patterning using a general photolithography technique and etching technique. Next, a gate insulating film 105 was formed so as to cover the gate electrode 104. The gate insulating film 105 is formed of a silicon oxide (SiO ₂ ) layer or a stacked body of a silicon oxide (SiO ₂ ) layer and a silicon nitride (SiN _x ) layer by, for example, plasma CVD. Further, an amorphous silicon layer (thickness 30 nm to 100 nm) was continuously formed.

This amorphous silicon layer was irradiated with a XeCl excimer laser pulse having a wavelength of 308 nm and melted and recrystallized to produce a crystalline silicon layer (polysilicon layer). Using this polysilicon layer, a polysilicon layer 106 serving as a channel formation region was formed, and a polysilicon layer 107 consisting of an n ⁻ type doped region and a polysilicon layer 108 consisting of an n ⁺ type doped region were formed on both sides thereof. . Thus, the active region has an LDD (Lightly Doped Drain) structure for achieving both a high on-current and a low off-current. A stopper layer 109 was formed on the polysilicon layer 106 to protect the channel when n ⁻ -type phosphorus ions were implanted. The stopper layer 109 is formed of, for example, a silicon oxide (SiO ₂ ) layer.

Further, a passivation film 110 made of a silicon oxide (SiO ₂ ) layer or a laminate of a silicon oxide (SiO ₂ ) layer and a silicon nitride (SiN _x ) layer was formed by plasma CVD. A source electrode 111 and a drain electrode 112 connected to each polysilicon layer 108 were formed on the passivation film 110. Each of the source electrode 111 and the drain electrode 112 is formed of a conductive material such as aluminum, an aluminum alloy, or a refractory metal.

  After forming each source electrode 111 and drain electrode 112, a color filter 113 was formed. The color filter 113 was formed by applying a color resist on the entire surface and then patterning with a lithography technique. A contact hole 113C is formed in the color filter 113 so that the source electrode 111 and a liquid crystal driving electrode to be formed later are connected. This color filter forming step was performed three times to form three colors of RGB (red, green, and blue). Next, a protective film 114 was formed for planarization. The protective film 114 is made of, for example, a polymethylmethacrylic acid resin. A contact hole 114C is formed in the protective film 114 so that the source electrode 111 and the liquid crystal driving electrode are connected. Thereafter, a pixel electrode 115 connected to the source electrode 111 was formed. The pixel electrode 115 is formed of a transparent electrode, for example. The transparent electrode is formed of indium tin oxide (ITO), for example, and a sputtering method is used as the formation method.

  Through the above steps, an active matrix substrate was manufactured on the first substrate 101. In addition, a bottom gate type polysilicon TFT is manufactured this time, but the same can be applied to a top gate type polysilicon TFT or an amorphous TFT.

  Next, a process of transferring the thin film device layer 121 on the first substrate 101 onto the plastic substrate will be described with reference to manufacturing process sectional views of FIGS.

  As shown in FIG. 4 (1), the first bonding is performed while heating the protective layer 102, the insulating layer 103, and the thin film device layer 121 on the first substrate 101 to 80 ° C. to 140 ° C. with a hot plate 122. The agent 123 was applied to a thickness of about 1 mm, the second substrate 124 was placed on top, and cooled to room temperature while being pressurized. As the second substrate 124, for example, a molybdenum substrate having a thickness of 1 mm was used. Alternatively, a glass substrate may be used for the second substrate 124. Alternatively, the first adhesive 123 may be applied on the second substrate 124 and the thin film device layer 121 side of the first substrate 101 on which the thin film device layer 121 is formed from the protective layer 102 may be placed thereon. As the first adhesive 123, for example, a hot melt adhesive was used.

  Next, as shown in FIG. 4B, the first substrate 101 to which the second substrate 124 was attached was immersed in hydrofluoric acid (HF) 125, and the first substrate 101 was etched. This etching is automatically stopped at the protective layer 102 because the molybdenum layer as the protective layer 102 is not etched by the hydrofluoric acid 125. As an example, the hydrofluoric acid 125 used here has a weight concentration of 50%, and this etching time was 3.5 hours. The concentration and etching time of the hydrofluoric acid 125 can be changed as long as the glass of the first substrate 101 can be completely etched.

  As a result of the etching with hydrofluoric acid 125, as shown in FIG. 5 (3), the first substrate 101 [see FIG. 4 (2)] is completely etched, and the protective layer 102 is exposed.

Next, with a mixed acid [for example, 72 wt% phosphoric acid (H ₃ PO ₄ ), ₃ wt% nitric acid (HNO ₃ ) and 10 wt% acetic acid (CH ₃ COOH)], the protective layer 102 [see FIG. A molybdenum layer (thickness: 500 nm) was etched. This is because there is a problem if there is an opaque molybdenum layer in order to manufacture a transmissive liquid crystal panel. The time required to etch a 500 nm thick molybdenum layer with the mixed acid is about 1 minute. As a result of this etching, as shown in FIG. 5 (4), this mixed acid does not etch the silicon oxide that is the first insulating layer 103, so that the etching automatically stops at the first insulating layer 103.

  Next, as shown in FIG. 5 (5), after the etching, a second adhesive layer 126 was formed on the back side of the thin film device layer 121, that is, on the surface of the insulating layer 103. As the method for applying the second adhesive layer 126, spray coating is used this time, but other methods such as dip coating or spin coating may be used.

  Subsequently, as shown in FIG. 6 (6), the third substrate 127 is attached to the second adhesive layer 126, vacuum defoaming is performed, and the second adhesive layer 126 is cured by irradiating with ultraviolet rays. 127 was fixed. A plastic substrate was used as the third substrate 127. Resin materials that can be used for this plastic substrate include resins (plastics) having a flexural modulus of 1 GPa or less, such as epoxy resin, polymethyl methacrylate resin, silicone resin, urethane resin, low-density polyethylene resin, and fluorine resin. . In this example, an epoxy resin film having a thickness of 0.2 mm was used as an example. This flexural modulus was 500 MPa. The second adhesive layer 126 has a thickness of 10 μm and a flexural modulus of 100 MPa.

  Next, the substrate is dipped in alcohol (not shown), and the first adhesive layer 123 (see FIG. 4 (1)) made of a hot-melt adhesive is melted to form the second substrate 124 (see FIG. 4 (1)). ))] Was removed. As a result, as shown in FIG. 6 (7), a thin film device (active substrate) 100 in which the thin film device layer 121 was placed on the third substrate 127 via the second adhesive layer 126 and the insulating layer 103 was obtained. Hereinafter, in the first embodiment, a thin film device will be described as an active substrate.

  In the thin film device and the method for manufacturing the thin film device, since a substrate having a flexural modulus of 1 GPa or less is used as the third substrate 127, stress due to the extension of the plastic substrate due to heat absorption or water absorption of the thin film device layer can be relieved. There is an advantage that heat resistance and moisture resistance can be improved.

  Next, an example of manufacturing the counter substrate will be described with reference to a schematic cross-sectional view of FIG.

  As shown in FIG. 7, as the counter substrate 130, a plastic substrate is prepared as the support substrate 131, and a transparent electrode 132 is formed on the entire surface on the support substrate 131 side. As the resin material used for the support substrate 131, for example, a resin (plastic) having a flexural modulus of 1 GPa or less such as polymethyl methacrylate resin, epoxy resin, silicone resin, urethane resin, low density polyethylene resin, fluororesin, or the like is used. I can give you. For the transparent electrode 132, for example, ITO (indium tin oxide) was used. This ITO film was formed by sputtering, for example.

  Next, although not shown, an opening serving as a pad portion for taking an electrode was formed in the counter substrate 130 by laser processing. Next, an alignment process (for example, a polyimide film) was applied to the counter substrate 130 and the active substrate 100 to perform a rubbing process. The rubbing direction was performed so that the counter substrate 130 and the active substrate 100 were orthogonal to each other.

Next, as shown in the schematic cross-sectional view of FIG. 8, a sealant (not shown) was applied to the active substrate 100, and a number of spacers 140 were dispersed on the counter substrate 130. Then, after the active substrate 100 and the counter substrate 130 were bonded together, the sealing agent was cured by irradiating with ultraviolet rays while applying pressure (for example, pressurizing at a pressure of about 1 kg / cm ² ). Next, after cutting into a panel size by laser processing, the liquid crystal 150 is injected from an injection port (not shown), the injection port is covered with a mold resin, the mold resin is cured, and the liquid crystal display device 1 is manufactured. did.

  Since the liquid crystal display device 1 manufactured by the above process uses a plastic substrate having a bending elastic modulus of 1 GPa or less as the third substrate 127 that serves as a support substrate for the active substrate 100, the third substrate 127 and the thin film device layer can be used even when the temperature is increased. No cracks or the like occur in 121.

  The liquid crystal display device of the present invention uses the active substrate (thin film device) 100 in which the thin film device layer 121 is formed on the third substrate 127 made of a plastic substrate having a flexural modulus of 1 GPa or less. Since the stress due to elongation of the plastic substrate due to heat absorption or water absorption can be relieved, there is an advantage that heat resistance and moisture resistance can be improved.

  A thin film device manufacturing method and a second embodiment of the thin film device and liquid crystal display device according to the present invention will be described with reference to FIGS. In the second example, an active substrate for reflective liquid crystal was produced on a plastic substrate.

  First, a method for forming a thin film device layer will be described with reference to the schematic sectional view of FIG. As shown in FIG. 9, an amorphous silicon layer 202 is formed on the first substrate 201. As the first substrate 101, a glass substrate having a thickness of about 0.4 mm to 1.1 mm, for example, 0.7 mm is used. A quartz substrate may be used instead of the glass substrate. The film thickness of the amorphous silicon layer 202 is 50 nm, for example. If this film thickness is 10 nm to 500 nm, there is no problem. A plasma CVD method was used as a method for forming the amorphous silicon layer 202. In the plasma CVD method, a low temperature is desirable so that the amorphous silicon layer 202 contains a large amount of hydrogen and as long as the thin film device layer is not peeled off during manufacturing. This time, the film was formed at 150 ° C. There is no problem even if the amorphous silicon layer 202 is formed by low pressure CVD, atmospheric pressure plasma CVD, ECR, or sputtering.

  Next, a protective insulating layer 203 is formed over the amorphous silicon layer 202. The protective insulating layer 203 is formed with a thickness of 100 nm, for example. The protective insulating layer 203 can be formed by a plasma CVD method, for example.

  Thereafter, general low-temperature polysilicon technology such as “2003 FPD Technology Encyclopedia” (published on March 25, 2003, p.166-183 and p.198-201), “'99 latest liquid crystal process technology” ( Press Journal 1998, p. 53-59), “Flat Panel Display 1999” (Nikkei BP, 1998, p. 132-139), etc. A thin film device layer including a TFT was formed by a process (hereinafter referred to as TFT). An example of a method for forming the thin film device layer will be described below.

First, a conductive film for forming the gate electrode 204 was formed over the protective insulating layer 203 formed over the first substrate 201 with the amorphous silicon layer 202 interposed therebetween. For example, a molybdenum (Mo) film having a thickness of 100 nm was used as the conductive film. As a method for forming the molybdenum film, for example, a sputtering method was used. Then, the conductive film was formed on the gate electrode 204. The gate electrode 204 was formed by patterning using a general photolithography technique and etching technique. Next, a gate insulating film 205 was formed so as to cover the gate electrode 204. The gate insulating film 205 is formed of a silicon oxide (SiO ₂ ) layer or a stacked body of a silicon oxide (SiO ₂ ) layer and a silicon nitride (SiN _x ) layer, for example, by plasma CVD. Further, an amorphous silicon layer (thickness 30 nm to 100 nm) was continuously formed.

This amorphous silicon layer was irradiated with a XeCl excimer laser pulse having a wavelength of 308 nm and melted and recrystallized to produce a crystalline silicon layer (polysilicon layer). Using this polysilicon layer, a polysilicon layer 206 serving as a channel formation region was formed, and a polysilicon layer 207 composed of an n ⁻ type doped region and a polysilicon layer 208 composed of an n ⁺ type doped region were formed on both sides thereof. . Thus, the active region has an LDD (Lightly Doped Drain) structure for achieving both a high on-current and a low off-current. A stopper layer 209 is formed on the polysilicon layer 206 to protect the channel when n ⁻ type phosphorus ions are implanted. The stopper layer 209 is formed of a silicon oxide (SiO ₂ ) layer, for example.

Further, a passivation film 210 made of a silicon oxide (SiO ₂ ) layer or a laminate of a silicon oxide (SiO ₂ ) layer and a silicon nitride (SiN _x ) layer was formed by plasma CVD. A source electrode 211 and a drain electrode 212 connected to each polysilicon layer 208 were formed on the passivation film 210. Each of the source electrode 211 and the drain electrode 212 is formed of a conductive material such as aluminum, an aluminum alloy, or a refractory metal.

  After forming the source electrode 211 and the drain electrode 212, a protective layer 213 was formed to protect the element and to perform planarization. The protective layer 213 is formed of, for example, a polymethyl methacrylic resin material. The protective layer 213 is formed so that the surface of the protective layer 213 is uneven so that the surface of the reflective layer formed on the protective layer 213 is uneven in the next step. Next, a contact hole 213C was formed by a normal contact hole forming technique so that the source electrode 211 and a liquid crystal driving electrode formed later were connected to the protective film 213. Thereafter, a reflective layer 214 was formed on the surface of the protective layer 213 and the inner surface of the contact hole 213C. The reflective layer 214 was formed by depositing silver (Ag) by sputtering, for example.

  After forming the reflective layer 214, a color filter 215 was formed. This was formed by applying a color resist on the entire surface and then patterning with a lithography technique. Next, a contact hole 215 </ b> C was formed so that the source electrode 211 and a liquid crystal driving electrode to be formed later were connected to the color filter 215. This color filter forming step was performed three times to form three colors of RGB (red, green, and blue).

  Thereafter, pixel electrodes 216 were formed on the surface of the color filter 215 and the inner surface of the contact hole 215C. The pixel electrode 216 is formed by depositing, for example, indium tin oxide (ITO) by sputtering, for example. Accordingly, the pixel electrode 216 is formed to be connected to the source electrode 211.

  Through the above steps, an active matrix substrate was produced on the first substrate 201 made of a glass substrate. In addition, a bottom gate type polysilicon TFT is manufactured this time, but the same can be applied to a top gate type polysilicon TFT or an amorphous TFT.

  Next, the process of transferring the thin film device layer on the first substrate 201 onto the plastic substrate will be described with reference to the manufacturing process sectional views of FIGS.

  As shown in FIG. 10A, the second substrate 223 is formed on the thin film device layer 221 formed on the first substrate 201 via the amorphous silicon layer 202 and the protective insulating layer 203 via the first adhesive 222. Paste. As the second substrate 223, for example, a molybdenum substrate having a thickness of 1 mm was used. Alternatively, a glass substrate may be used for the second substrate 223. Alternatively, the first adhesive 222 may be formed on the second substrate 223, and the thin film device layer 221 side of the first substrate 201 on which the amorphous silicon layer 202 to the thin film device layer 221 are formed may be placed. . For the first adhesive 222, for example, a hot melt adhesive was used.

  Next, xenon chlorine (XeCl) excimer laser light was irradiated from the first substrate 201 side made of a glass substrate. Since glass transmits the excimer laser light, the laser light is absorbed by the amorphous silicon layer 202. When the amorphous silicon layer 202 absorbs ultraviolet rays, hydrogen is generated, and the thin film device layer 221 and the first substrate 201 are separated from each other with the amorphous silicon layer 202 as a boundary. Details of this technique are disclosed in Japanese Patent Laid-Open No. 10-125930. As a result, as shown in FIG. 10B, the protective insulating layer 203 was exposed.

  Next, as illustrated in FIG. 10C, the second adhesive layer 224 was formed on the protective insulating layer 203. The second adhesive layer 224 is formed by applying an ultraviolet curable adhesive. As the method of applying the second adhesive layer 224, spray coating is used this time, but other methods such as dip coating or spin coating may be used.

  Subsequently, as shown in FIG. 11 (4), the third substrate 225 is attached to the second adhesive layer 224, vacuum defoaming is performed, and the second adhesive layer 224 is cured by irradiating with ultraviolet rays. 225 was fixed. A plastic substrate was used as the third substrate 225. Examples of the resin material that can be used for the plastic substrate include a resin (plastic) having a flexural modulus of 1 GPa or less, such as polymethyl methacrylate resin, epoxy resin, silicone resin, urethane resin, low-density polyethylene resin, and fluororesin. Can be given. As an example, a polymethyl methacrylate resin film having a thickness of 0.2 mm was used this time. This flexural modulus was 100 MPa. The second adhesive layer 224 has a thickness of 10 μm and a flexural modulus of 100 MPa.

  Next, the substrate is dipped in alcohol (not shown), and the first adhesive layer 222 (see FIG. 10 (1)) made of hot melt adhesive is melted to form the second substrate 223 (see FIG. 10 (1)). ))] Was removed. As a result, as shown in FIG. 11 (5), a thin film device (active substrate) 200 was obtained in which the thin film device layer 221 was placed on the third substrate 225 via the second adhesive layer 224 and the insulating layer 203.

  In the thin film device and the method for manufacturing the thin film device, since a substrate having a flexural modulus of 1 GPa or less is used for the third substrate 225, stress due to the extension of the plastic substrate due to heat absorption or water absorption of the thin film device layer can be relieved. There is an advantage that heat resistance and moisture resistance can be improved. Furthermore, since polymethyl methacrylate resin having a lower flexural modulus than that of the third substrate of the first embodiment is used for the third substrate 225, the heat-resistant temperature can be raised as compared with the thin film device of the first embodiment.

Next, a general assembly process for a liquid crystal display device may be performed. For example, as shown in FIG. 7, the counter substrate 130 is formed. Thereafter, although not shown, an alignment film (for example, a polyimide film) is applied to the counter substrate 130 and the active substrate 200, and an alignment process for performing a rubbing process is performed. Next, a sealant (not shown) was applied to the active substrate 200, and a number of spacers (not shown) were dispersed on the counter substrate 130. Then, after the active substrate 200 and the counter substrate 130 were bonded together, the sealing agent was cured by irradiating ultraviolet rays while applying pressure, for example, at 1 kg / cm ² . Next, after cutting into the size of the panel by laser processing, liquid crystal was injected from the injection port, the injection port was covered with a mold resin, and the mold resin was cured to produce a liquid crystal display panel.

  The liquid crystal display device of the present invention uses the active substrate (thin film device) 200 in which the thin film device layer 221 is formed on the third substrate 225 made of a plastic substrate having a flexural modulus of 1 GPa or less. Since the stress due to elongation of the plastic substrate due to heat absorption or water absorption can be relieved, there is an advantage that heat resistance and moisture resistance can be improved.

  An embodiment according to a method for manufacturing a thin film device, a thin film device and an electroluminescence display device of the present invention will be described with reference to FIGS. In this example, an active matrix substrate was produced on a plastic substrate by a transfer method to produce an active matrix organic electroluminescence (hereinafter abbreviated as EL) display.

  First, a method for forming a thin film device layer will be described with reference to the schematic sectional view of FIG.

  As shown in FIG. 12, a general low-temperature polysilicon technology such as “2003 FPD Technology Encyclopedia” (published on March 25, 2003, pages 166-183 and pages 198-201) is formed on a glass substrate 301. ), “'99 Latest Liquid Crystal Process Technology” (Press Journal 1998, p. 53-59), “Flat Panel Display 1999” (Nikkei Business Publications, 1998, p. 132-139), etc. A thin film device layer including a TFT was formed by a low temperature polysilicon bottom gate thin film transistor (hereinafter, thin film transistor is referred to as TFT) process. An example of a method for forming the thin film device layer will be described below.

First, a conductive film for forming the gate electrode 304 was formed over the first substrate 301. For example, a molybdenum (Mo) film having a thickness of 100 nm was used as the conductive film. As a method for forming the molybdenum film, for example, a sputtering method was used. Then, the conductive film was processed to form a gate electrode 304. The gate electrode 304 was formed by patterning using a general photolithography technique and etching technique. Next, a gate insulating film 305 was formed so as to cover the gate electrode 304. The gate insulating film 305 is formed of a silicon oxide (SiO ₂ ) layer or a stacked body of a silicon oxide (SiO ₂ ) layer and a silicon nitride (SiN _x ) layer, for example, by plasma CVD. Further, an amorphous silicon layer (thickness 30 nm to 100 nm) was continuously formed.

This amorphous silicon layer was irradiated with a XeCl excimer laser pulse having a wavelength of 308 nm, melted and recrystallized to produce a crystalline silicon layer. Using this polysilicon layer, a polysilicon layer 306 serving as a channel formation region was formed, and a polysilicon layer 307 composed of an n ⁻ type doped region and a polysilicon layer 308 composed of an n ⁺ type doped region were formed on both sides thereof. . Thus, the active region has an LDD (Lightly Doped Drain) structure for achieving both a high on-current and a low off-current. A stopper layer 309 is formed on the polysilicon layer 306 to protect the channel when n ⁻ type phosphorus ions are implanted. The stopper layer 309 is formed of, for example, a silicon oxide (SiO ₂ ) layer.

Further, a passivation film 310 made of a silicon oxide (SiO ₂ ) layer or a laminate of a silicon oxide (SiO ₂ ) layer and a silicon nitride (SiN _x ) layer was formed by plasma CVD. A source electrode 311 and a drain electrode 312 connected to each polysilicon layer 308 were formed on the passivation film 310. Each source electrode 311 and drain electrode 312 is made of, for example, aluminum.

  In this way, a thin film transistor (TFT) was formed by a low temperature polysilicon bottom gate type thin film transistor (TFT) process.

  Next, after forming a protective insulating layer 313 with, for example, a methyl methacrylate resin-based resin on the passivation film 310 so as to cover the source electrode 311, the drain electrode 312, and the like by, for example, spin coating, a general photolithography technique is used. Then, the protective insulating layer 313 was removed so that the source electrode 311 and the anode electrode of the organic EL element to be formed later could be connected by etching technique.

  Next, an organic EL element was formed over the protective insulating layer 313. The organic EL element includes an anode electrode 314, an organic layer, and a cathode electrode 317. The anode electrode 314 is formed, for example, by depositing chromium (Cr) by sputtering, and is connected to the source electrode 311 of each TFT so that an electric current can flow individually.

  The organic layer has a structure in which an organic hole transport layer 315 and an organic light emitting layer 316 are laminated. As the organic hole transport layer 315, for example, copper phthalocyanine was formed to a thickness of 30 nm by vapor deposition. The organic light emitting layer 316 is green, Alq3 [tris (8-quinolinolato) aluminum (III)] is 50 nm thick, and blue is bathocuproine (2,9-dimethyl-4,7-diphenyl-1, 10phenanthroline) to a thickness of 14 nm and red as BSB-BCN [2,5-bis {4- (N-methoxyphenyl-N-phenylamino) styryl} benzene-1,4-dicarbonitrile] to a thickness of 30 nm. did.

As the cathode electrode 317, indium tin oxide (In ₂ O ₃ + SnO ₂ : ITO) was used.

  This time, the above structure was used as an organic EL element, but an electrode was combined with an electron transport layer, a hole transport layer, an electron injection layer, a hole injection layer, an electron blocking layer, a hole blocking layer, and a light emitting layer. A known structure may be used.

Further, a passivation film 318 was formed so as to cover the cathode electrode 317. This time, as the passivation film 318, a silicon nitride (SiN _x ) film having a thickness of, for example, 200 nm is formed by sputtering. Alternatively, the passivation film 318 may be formed by a CVD method, a vapor deposition method, or the like.

  Hereinafter, the TFT layer to the organic EL layer are referred to as a thin film device layer. Next, the process of transferring the thin film device layer on the first substrate 301 onto the plastic substrate will be described with reference to the manufacturing process sectional views of FIGS.

  As shown in FIG. 13 (1), the first adhesive layer 323 is formed, for example, as a hot melt adhesive while heating a thin film device layer 321 formed on the first substrate 301 to 80 ° C. to 140 ° C. with a hot plate 322. For example, applied to a thickness of about 1 mm. Next, the second substrate 324 was placed on the first adhesive layer 323, and the second substrate 324 was cooled to room temperature while being pressed toward the first substrate 301. As the second substrate 324, for example, a molybdenum (Mo) substrate having a thickness of 1 mm was used. Alternatively, a hot melt adhesive may be applied on the second substrate 324, and the thin film device layer 321 side of the first substrate 301 on which the thin film device layer 321 is formed may be placed.

  Next, as shown in FIG. 13B, the substrate on which the second substrate 324 was attached was immersed in hydrofluoric acid 325, and the first substrate 301 was etched. In this etching, since the first substrate 301 is left so as to have a thickness of about 30 μm, for example, the etching end point is controlled by the etching time, for example. As an example, the hydrofluoric acid 325 used here has a weight concentration of 15% to 25%, and the etching time was about 3 hours at room temperature while stirring the hydrofluoric acid solution by bubbling by air blow. There is no problem even if the concentration of hydrofluoric acid 325 and the etching time are appropriately changed. Instead of the etching, the first substrate 301 may be thinned by polishing such as mechanical polishing and chemical mechanical polishing. The thickness of the first substrate 101 made of the glass substrate is preferably 300 μm or less. When a glass substrate having a thickness exceeding 300 μm is used, the effect of using a plastic substrate having a flexural modulus of 1 GPa or less, which will be described later, cannot be found.

  As a result of the etching with hydrofluoric acid 325, as shown in FIG. 14 (3), a thin film device layer 321 is formed on the first substrate 301, and further, the first adhesive layer 323 is formed on the thin film device layer 321. A substrate on which the second substrate 324 is formed is obtained.

  Thereafter, as shown in FIG. 14 (4), a second adhesive layer 326 is formed on the surface of the first substrate 301 opposite to the surface on which the thin film device layer 321 is formed. For example, the second adhesive layer 326 is formed by applying, for example, a polymethyl methacrylate resin-based ultraviolet curable adhesive by a spin coating technique. In film formation by the spin coating technique, the film thickness was about 100 μm. Thereafter, the second adhesive layer 326 was cured by irradiating with ultraviolet rays, and this was used as the third substrate 327. The third substrate 327 has a thickness of about 100 μm and a flexural modulus of 100 MPa. In the third embodiment, there is an advantage that it is not necessary to defoam, since it is not necessary to prepare a separate plastic substrate as in the first embodiment. Further, the 100 MPa plastic substrate is difficult to handle as in the second embodiment, but in this embodiment, it is easy to handle because it is formed by coating. Further, after the second adhesive layer 326 is cured, the remaining first substrate (glass substrate) 301 is 30 μm even if the rigidity of the plastic substrate is low, and the remaining first substrate 301 and third substrate 327 are Since they are integrated, there is an advantage that they are rigid and easy to handle.

  Next, the substrate is immersed in alcohol (not shown), and the first adhesive layer 322 [see FIG. 13 (1)] made of a hot-melt adhesive is melted to form the second substrate 323 [see FIG. 13 (1). 14), and as shown in FIG. 14 (5), a thin film device (active substrate) 300 on which the thin film device layer 321 was placed on the third substrate 327 via the remaining first substrate 301 was obtained.

  Thereafter, although not shown in the drawing, it may be carried out in a generally assembled process of an organic electroluminescence display device.

  Since the electroluminescent display device of the present invention uses the active substrate (thin film device) 300 in which the thin film device layer 321 is formed on the third substrate 327 made of a plastic substrate having a flexural modulus of 1 GPa or less, the thin film device layer 321 is used. Since the stress due to elongation of the plastic substrate due to heat absorption or water absorption can be relieved, there is an advantage that heat resistance and moisture resistance can be improved.

  The thin film device, the thin film device manufacturing method, the liquid crystal display device and the electroluminescence display device of the present invention are suitable for application to a display device such as a liquid crystal display device using a plastic substrate and an organic electroluminescence display device.

It is a schematic structure sectional view explaining an embodiment concerning a thin film device of the present invention. It is a related figure of the heat-resistant temperature of a thin film device, and the bending elastic modulus of a 3rd board | substrate. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view illustrating a first embodiment of a thin film device manufacturing method, a thin film device, and a liquid crystal display device according to the present invention. It is manufacturing process sectional drawing which shows 1st Example which concerns on the manufacturing method of a thin film device of this invention, a thin film device, and a liquid crystal display device. It is manufacturing process sectional drawing which shows 1st Example which concerns on the manufacturing method of a thin film device of this invention, a thin film device, and a liquid crystal display device. It is manufacturing process sectional drawing which shows 1st Example which concerns on the manufacturing method of a thin film device of this invention, a thin film device, and a liquid crystal display device. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view illustrating a first embodiment of a method for manufacturing a thin film device, a thin film device, and a liquid crystal display device according to the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view illustrating a first embodiment of a method for manufacturing a thin film device, a thin film device, and a liquid crystal display device according to the present invention. It is a schematic structure sectional view showing the 2nd example concerning a manufacturing method of a thin film device of the present invention, a thin film device, and a liquid crystal display. It is manufacturing process sectional drawing which shows 2nd Example which concerns on the manufacturing method of a thin film device of this invention, a thin film device, and a liquid crystal display device. It is manufacturing process sectional drawing which shows 2nd Example which concerns on the manufacturing method of a thin film device of this invention, a thin film device, and a liquid crystal display device. It is a schematic structure sectional view showing one example concerning a manufacturing method of a thin film device of the present invention, a thin film device, and an electroluminescence display. It is manufacturing process sectional drawing which shows one Example which concerns on the manufacturing method of the thin film device of this invention, a thin film device, and an electroluminescent display apparatus. It is manufacturing process sectional drawing which shows one Example which concerns on the manufacturing method of the thin film device of this invention, a thin film device, and an electroluminescent display apparatus.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Thin film device, 11 ... Support substrate, 13 ... Thin film device layer

Claims (12)

A thin film device, wherein a thin film device layer is formed on a plastic substrate having a flexural modulus of 1 GPa or less. A thin film device layer, wherein a thin film device layer is formed on a composite substrate in which a plastic substrate having a flexural modulus of 1 GPa or less and a glass substrate are bonded together. Forming a thin film device layer on the first substrate and then bonding the second substrate on the thin film device layer via the first adhesive layer or the coating layer and the first adhesive layer;
Separating or removing the first substrate completely or partially by a process including at least one of chemical treatment, mechanical polishing treatment, and ultraviolet irradiation treatment;
Bonding the first substrate left or partially left of the first substrate of the thin film device layer to a third substrate via a second adhesive layer;
A method of manufacturing a thin film device comprising: separating or removing the second substrate;
A method of manufacturing a thin film device, wherein a substrate having a flexural modulus of 1 GPa or less is used as the third substrate. Forming a thin film device layer on the first substrate and then bonding the second substrate on the thin film device layer via the first adhesive layer or the coating layer and the first adhesive layer;
Separating or removing the first substrate completely or partially by a process including at least one of chemical treatment, mechanical polishing treatment, and ultraviolet irradiation treatment;
Forming a third substrate by applying and curing a liquid resin on the side of the thin film device layer on which the first substrate has been formed or on the first substrate that has been partially left;
A method of manufacturing a thin film device comprising: separating or removing the second substrate;
A method of manufacturing a thin film device, wherein a substrate having a flexural modulus of 1 GPa or less is used as the third substrate. A liquid crystal display device using a thin film device in which a thin film device layer is formed on a plastic substrate having a flexural modulus of 1 GPa or less. A liquid crystal display device using a thin film device in which a thin film device layer is formed on a composite substrate in which a plastic substrate having a flexural modulus of 1 GPa or less and a glass substrate are bonded together. An electroluminescence display device using a thin film device in which a thin film device layer is formed on a plastic substrate having a flexural modulus of 1 GPa or less. An electroluminescence display device comprising a thin film device in which a thin film device layer is formed on a composite substrate in which a plastic substrate having a flexural modulus of 1 GPa or less and a glass substrate are bonded together. Forming a thin film device layer on the first substrate and then bonding the second substrate on the thin film device layer via the first adhesive layer or the coating layer and the first adhesive layer;
Separating or removing the first substrate completely or partially by a process including at least one of chemical treatment, mechanical polishing treatment, and ultraviolet irradiation treatment;
Bonding the first substrate left or partially left of the first substrate of the thin film device layer to a third substrate via a second adhesive layer;
In a liquid crystal display device using a thin film device manufactured by separating or removing the second substrate,
A substrate having a bending elastic modulus of 1 GPa or less is used as the third substrate. Forming a thin film device layer on the first substrate and then bonding the second substrate on the thin film device layer via the first adhesive layer or the coating layer and the first adhesive layer;
Separating or removing the first substrate completely or partially by a process including at least one of chemical treatment, mechanical polishing treatment, and ultraviolet irradiation treatment;
Forming a third substrate by applying and curing a liquid resin on the side of the thin film device layer on which the first substrate has been formed or on the first substrate that has been partially left;
In a liquid crystal display device using a thin film device manufactured by separating or removing the second substrate,
A substrate having a bending elastic modulus of 1 GPa or less is used as the third substrate. Forming a thin film device layer on the first substrate and then bonding the second substrate on the thin film device layer via the first adhesive layer or the coating layer and the first adhesive layer;
Separating or removing the first substrate completely or partially by a process including at least one of chemical treatment, mechanical polishing treatment, and ultraviolet irradiation treatment;
Bonding the first substrate left or partially left of the first substrate of the thin film device layer to a third substrate via a second adhesive layer;
In an electroluminescence display device using a thin film device manufactured by separating or removing the second substrate,
A substrate having a flexural modulus of 1 GPa or less is used as the third substrate. An electroluminescence display device, wherein: Forming a thin film device layer on the first substrate and then bonding the second substrate on the thin film device layer via the first adhesive layer or the coating layer and the first adhesive layer;
Separating or removing the first substrate completely or partially by a process including at least one of chemical treatment, mechanical polishing treatment, and ultraviolet irradiation treatment;
Forming a third substrate by applying and curing a liquid resin on the side of the thin film device layer on which the first substrate has been formed or on the first substrate that has been partially left;
In an electroluminescence display device using a thin film device manufactured by separating or removing the second substrate,
A substrate having a flexural modulus of 1 GPa or less is used as the third substrate. An electroluminescence display device, wherein:

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