JP2005128411A - Electro-optical device, method for manufacturing the same and display apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electro-optical device whose weight can be made light even when a substrate for an electro-optical device which consists of hard material, such as glass is used and moreover in which a curved display surface can be constituted and a method for manufacture the electro-optical device and a display apparatus. <P>SOLUTION: In an electro-optical device 1, since a TFT array substrate 10 and a counter substrate 20 constituting a liquid crystal panel 100 are respectively thinned to thickness of 25μm or less, the liquid crystal panel 100 can be bent at a center part in the lateral direction or a center part in the vertical direction. Thereby, in the panel 100, terminals 14 and a liquid crystal inlet 54 are arranged at areas where are avoided from the center part in the lateral direction of the panel 100 and the center part in the vertical direction of the panel 100. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to an electro-optical device in which an electro-optical material is held on a substrate, a manufacturing method thereof, and a display device using the electro-optical device.

  In an electro-optical device such as a liquid crystal device or an organic electroluminescence display device, an electro-optical material is held by the substrate for the electro-optical device, and various images are displayed using the substantially central region of the substrate for the electro-optical device as an image display region. Is done. In the image display area, a large number of pixels including pixel switching elements and pixel electrodes are formed in a matrix in each position corresponding to the intersection of the scanning lines and data lines extending vertically and horizontally.

For the electro-optical device, it is desired to reduce the weight, and in order to meet such a demand, it has been proposed to use a plastic film substrate as a substrate for the electro-optical device (see, for example, Patent Document 1).
JP 2003-43496 A

  However, since the plastic film substrate has a heat resistant temperature of 200 ° C. and is significantly lower than the heat resistant temperature of the glass substrate (800 ° C.), when forming wirings and pixel electrodes on the substrate using a semiconductor process, There is a problem that it is easily damaged. For the same reason, since a non-linear element for pixel switching cannot be formed on the plastic film substrate, it is impossible to manufacture an active matrix type electro-optical device. However, when a thin glass substrate or quartz substrate is used from the beginning as the electro-optical device substrate, there is a problem that it breaks during the manufacturing process. In addition, when an electro-optical device is configured using a plastic film substrate, there is a problem that moisture resistance is low.

  In view of the above problems, the object of the present invention is to reduce the weight even when a substrate for an electro-optical device made of a hard material such as glass is used, and further, a curved display surface can be configured. It is an object to provide an electro-optical device, a method for manufacturing the electro-optical device, and a display device using the same.

  In order to solve the above problems, in the present invention, an electro-optical material is held by an electro-optical device substrate, and a flexible substrate or an IC chip is mounted on a terminal formed on the electro-optical device substrate. In the electro-optical device, the electro-optical device substrate is a substrate made of a hard material having a thickness of 50 μm or less.

  In the present invention, after the electro-optical device substrate is formed by holding the electro-optical material on the original substrate made of a hard material having a thickness exceeding 50 μm, for example, 0.5 mm, and forming the terminals The substrate is preferably a substrate whose thickness is reduced to 50 μm or less by polishing the original substrate. If comprised in this way, since the board | substrate for electro-optical apparatuses is thick until the middle of manufacturing an electro-optical apparatus, there is no possibility of breaking during a manufacturing process. In addition, since the electro-optic device substrate is thinned not by chemical etching but by polishing, the surface of the electro-optic device substrate is not roughened. In addition, a large number of terminals are formed on the electro-optical device substrate. However, unlike chemical etching, the outer surface of the electro-optical device substrate can be selectively polished in the case of polishing, resulting in damage to the terminals. Nor. Further, when a pair of substrates for an electro-optical device are bonded together by a sealing material as in a liquid crystal device, unlike the chemical etching, the sealing material is not deteriorated in the case of polishing.

  In the present invention, pixels having pixel electrodes for driving the electro-optical material are arranged in a matrix on the electro-optical device substrate, and a non-linear element for pixel switching is formed in each of the pixels. Preferably it is. The term “nonlinear element” as used herein means a pixel switching TFT and a thin film diode (TFD element) of a liquid crystal device, and a driving transistor that supplies current to the electroluminescence element in an electroluminescence display device.

  In the present invention, the electro-optical device substrate is a glass substrate or a quartz substrate.

  In the present invention, it is preferable that an outer peripheral corner portion of the surface opposite to the side holding the electro-optical material is chamfered in the electro-optical device substrate.

  In the present invention, it is preferable that the terminals are formed on the electro-optical device substrate in a central region in the vertical direction of the electro-optical device substrate and a region avoiding the central region in the horizontal direction. With this configuration, even if the electro-optic device substrate is bent at the center portion, the terminal region is not affected.

  In the present invention, the electro-optical device substrate is preferably used in a curved state.

  In the present invention, it is preferable that the electro-optical device substrate is curved in a region avoiding a region where the terminals are formed. With this configuration, even when the electro-optical device substrate is bent, the flexible substrate and the IC chip mounted on the terminals are not affected.

  In the present invention, when the electro-optical device is configured as a liquid crystal device, a liquid crystal panel in which two substrates for the electro-optical device are bonded together with a sealing material, and liquid crystal as the electro-optical material is injected and held between the substrates. Is used.

  In the present invention, the liquid crystal injection port composed of the discontinuous portion of the sealing material is sealed with a sealing material, and is formed in a central region in the vertical direction and a central region in the horizontal direction of the liquid crystal panel. It is preferable that With this configuration, even if the electro-optic device substrate is bent at the center portion, the sealing material is not affected.

  In the present invention, the liquid crystal panel is preferably curved in a region avoiding the position where the liquid crystal inlet is formed. With this configuration, even if the electro-optic device substrate is bent at the center portion, the sealing material is not affected.

  In the present invention, in the case of a liquid crystal device, since two electro-optical device substrates are bonded together with a sealing material, it is preferable that the two electro-optical device substrates have a thickness of 25 μm or less.

  In the present invention, in the case of a transmissive or transflective liquid crystal device, a polarizing plate and a backlight device are required. Therefore, when a liquid crystal panel is curved, a light transmission having a curved surface with a sheet-like polarizing member attached thereto. Preferably, a liquid crystal panel is used, the liquid crystal panel is overlaid on the convex curved surface side of the plate frame, and a backlight light source is disposed on the concave curved surface side of the plate frame.

  In the present invention, when the electro-optic device is configured as an electroluminescence display device, an electroluminescence material as the electro-optic material is held on the electro-optic device substrate to constitute an electroluminescence element.

  In the present invention, an electro-optical material is held by an electro-optical device substrate made of a hard material, and a flexible substrate or an IC chip is mounted on a terminal formed on the electro-optical device substrate. In the manufacturing method, the electro-optical device substrate has a thickness of 50 μm or less, and a mold release process is performed when a flexible substrate or an IC chip is mounted on the terminal of the electro-optical device substrate. The electro-optical device substrate is placed on the surface of the base, and in this state, an anisotropic conductive material is sandwiched between the terminal and the flexible substrate or the IC chip and heated and pressurized. . With this configuration, the anisotropic conductive material does not adhere to the base even if the anisotropic conductive material overflows from the substrate and touches the base due to the thin substrate for the electro-optical device. Accordingly, when the electro-optical device substrate is removed from the base, no excessive force is applied to the electro-optical device substrate, so that the electro-optical device substrate is not broken.

  The electro-optical device to which the present invention is applied can be used as a display device of an electronic device such as a mobile computer or a mobile phone, and can be used to configure a display device having a curved display surface.

  In the present invention, a hard substrate such as a glass substrate is used as the substrate for the electro-optical device. However, since the thickness of the substrate for the electro-optical device is 50 μm or less, the weight of the electro-optical device can be reduced. Further, unlike a plastic film substrate, a pixel substrate, a wiring, and further a non-linear element can be formed using a semiconductor process as long as it is a hard substrate such as a glass substrate. Furthermore, when the thickness is 50 μm or less, the electro-optical device substrate can be used in a curved state.

  Embodiments of the present invention will be described below with reference to the drawings.

[Embodiment 1]
(Basic configuration of electro-optical device)
1A, 1B, and 1C are a plan view, a cross-sectional view, and an enlarged cross-sectional view of an outer peripheral corner portion of a liquid crystal panel, as viewed from the counter substrate side of the electro-optical device to which the present invention is applied. FIG. 2 is an equivalent circuit diagram of various elements and wirings in a plurality of pixels formed in a matrix in the image display region of the electro-optical device. Note that, in each drawing used in the description of the present embodiment, each layer and each member have different scales so that each layer and each member can be recognized on the drawing.

  1A and 1B, an electro-optical device 1 according to this embodiment includes a transmissive or transflective active matrix liquid crystal panel 100. The liquid crystal panel 100 has a rectangular frame shape. A liquid crystal 50 as an electro-optical material is held between the TFT array substrate 10 (electro-optical device substrate) and the counter substrate 20 (electro-optical device substrate) bonded together by the sealing material 52 applied to the substrate. Yes. A liquid crystal injection port 54 is formed in the sealing material 52 by a discontinuous portion. After the liquid crystal 50 is injected between the liquid crystal injection port 54 and the substrate, the liquid crystal injection port 54 is sealed with a sealing material 55. Yes. Inside the sealing material 52, a peripheral parting 53 made of a light shielding material is formed along the sealing material 52. In this embodiment, the TFT array substrate 10 is larger than the counter substrate 20, and a large number of terminals 14 are formed along one side of the TFT array substrate 10 in the protruding region 12 from the counter substrate 20. Thus, the flexible substrate 120 on which the driving IC 110 is COF-mounted is connected. A configuration in which a data line driving circuit and a scanning line driving circuit are formed on the TFT array substrate 10 instead of the flexible substrate 120 on which the driving IC 110 is COF-mounted, or the driving IC 110 is mounted on the TFT array substrate 10. In either case, a terminal is formed in the overhang region 12 of the TFT array substrate 10.

  On the TFT array substrate 10, pixel electrodes 9a are formed in a matrix. A light shielding film 23 called a black matrix or a black stripe is formed in a region facing the vertical and horizontal boundary regions of the pixel electrode 9a of the TFT array substrate 10 on the counter substrate 20, and an ITO film is formed on the upper layer side. The counter electrode 21 is formed. In the case where the electro-optical device 1 is configured for color display, an RGB color filter and a surface protective film are provided in a region of the counter substrate 20 facing each pixel electrode (described later) of the TFT array substrate 10. Form.

  In the electro-optical device 1, the phase difference depends on the type of liquid crystal 50 to be used, that is, the operation mode such as TN (twisted nematic) mode, STN (super TN) mode, and normally white mode / normally black mode. Although a film, a polarizing plate, etc. are arrange | positioned in the predetermined direction, only the polarizing plates 140 and 150 are represented here.

  In the image display area of the electro-optical device 1 having such a structure, as shown in FIG. 2, a plurality of pixels 100a are configured in a matrix. In each of these pixels 100a, a pixel electrode 9a and a pixel switching TFT 30 (thin film semiconductor element) for driving the pixel electrode 9 are formed, and pixel signals S1, S2,... Sn are supplied. The data line 6a to be connected is electrically connected to the source of the TFT 30. The pixel signals S1, S2,... Sn written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. Good. Further, the scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2,... Gm are applied to the scanning line 3a in a pulse-sequential manner in this order at a predetermined timing. It is configured. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and the pixel signal S1, S2,... Sn supplied from the data line 6a is turned on by turning on the TFT 30 as a switching element for a certain period. Are written in each pixel at a predetermined timing. In this way, the pixel signals S1, S2,... Sn at a predetermined level written to the liquid crystal 50 through the pixel electrode 9a are constant between the counter electrode 21 of the counter substrate 20 shown in FIG. Hold for a period.

  Here, the liquid crystal 50 modulates light and enables gradation display by changing the orientation and order of the molecular assembly according to the applied voltage level. In the normally white mode, the amount of incident light passing through the portion of the liquid crystal 50 is reduced according to the applied voltage. In the normally black mode, the incident light is changed according to the applied voltage. The amount of light passing through the portion of the liquid crystal 50 increases. As a result, the electro-optical device 1 as a whole emits light having a contrast corresponding to the pixel signals S1, S2,.

  In order to prevent the retained pixel signals S1, S2,... Sn from leaking, a storage capacitor 60 may be added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode 21. is there. For example, the voltage of the pixel electrode 9a is held by the storage capacitor 60 (thin film capacitor element) for a time that is three orders of magnitude longer than the time when the source voltage is applied. As a result, the charge retention characteristics are improved, and the electro-optical device 1 with a high contrast ratio can be realized. As a method for forming the storage capacitor 60, as illustrated in FIG. 2, the storage capacitor 60 is formed between the storage capacitor 60 and the capacitor line 3 b that is a wiring for forming the storage capacitor 60, or with the previous scanning line 3 a. Any of them may be formed between them.

  In the electro-optical device 1 configured as described above, in this embodiment, the TFT array substrate 10 and the counter substrate 20 constituting the liquid crystal panel 100 are both 50 μm or less, and in this embodiment, an extremely thin glass substrate or quartz substrate such as 25 μm. It is composed of a hard material.

  Accordingly, in the liquid crystal panel 100 and the electro-optical device 1 of the present embodiment, a hard substrate such as a glass substrate is used as the electro-optical device substrate (TFT array substrate 10 and counter substrate 20), but the thickness is 50 μm or less. Therefore, the weight of the liquid crystal panel 100 and the electro-optical device 1 can be reduced. Further, unlike a plastic film substrate, if it is a hard substrate such as a glass substrate, the pixel electrode 9a, the wiring such as the data line 6a and the scanning line 3a, and the TFT 30 (non-linear element) are formed using a semiconductor process. be able to.

(Chamfer structure for substrate)
In the liquid crystal panel 100, for the TFT array substrate 10 and the counter substrate 20, various wirings are formed by a semiconductor process in the state of a large original substrate from which a large number of them can be obtained, and then the large original substrates are bonded together. Configure a large panel. After the liquid crystal 50 is injected, the large panel is cut with a scribe blade. Therefore, micro cracks are generated at the corners of the TFT array substrate 10 and the counter substrate 20.

  Therefore, in this embodiment, as shown in FIG. 1C, in the TFT array substrate 10 and the counter substrate 20, the outer peripheral corner portions 101 and 201 on the surface opposite to the side holding the liquid crystal 50 are chamfered. Has been.

  Therefore, in the TFT array substrate 10 and the counter substrate 20, no microcracks remain on the cut surface. Therefore, when the electro-optical device 1 is manufactured, the TFT array substrate 10 and the counter substrate 20 are cracked due to the growth of the microcracks. Does not occur.

(Method for manufacturing electro-optical device)
3A and 3B are a plan view and a cross-sectional view of an intermediate product of a liquid crystal panel to which the present invention is applied as viewed from the counter substrate side. 4A to 4D are process cross-sectional views of the polishing process for the counter substrate in the manufacturing process of the electro-optical device of the invention. FIGS. 5A and 5B are explanatory diagrams of a fixing head and a diaphragm for pressing an intermediate product against a surface plate using fluid pressure in the method for manufacturing an electro-optical device according to the present invention. 6A to 6E are process cross-sectional views such as a polishing process for the TFT array substrate in the manufacturing process of the electro-optical device of the present invention. FIG. 7 is an explanatory diagram showing a state where a flexible substrate is mounted on a liquid crystal panel in the method of manufacturing an electro-optical device to which the present invention is applied.

  In the electro-optical device 1 of this embodiment, the TFT array substrate 10 and the counter substrate 20 are both 50 μm or less, and in this embodiment, are made of a hard material such as a very thin glass substrate or quartz substrate of 25 μm. In configuring the electro-optical device 1 with such a thin substrate, in this embodiment, as shown in FIGS. 3A and 3B, a thick TFT array substrate 10 and a counter substrate 20 having a thickness of about 0.5 mm. After the manufacturing process 100 ′ of the electro-optical device 1 is manufactured using the (original substrate), the TFT array substrate 10 and the counter substrate 20 are each thinned to a predetermined thickness, for example, 25 μm. When the electro-optical device 1 is manufactured, various wirings and the like are formed for the TFT array substrate 10 and the counter substrate 20 by a semiconductor process in a state of a large original substrate from which a large number of them can be obtained. In the description, the TFT array substrate 10 and the counter substrate 20 are not distinguished from the original substrate, and will be referred to as the TFT array substrate 10 and the counter substrate 20. Further, the chamfering of the outer peripheral corner portions 101 and 201 of the TFT array substrate 10 and the counter substrate 20 described with reference to FIG. 1C is performed at the stage of the intermediate product shown in FIGS. 3A and 3B. Keep it. The chamfering at that time is left after the polishing step described below.

  More specifically, in the method of manufacturing the electro-optical device 1 according to this embodiment, first, a semiconductor process is used for a glass substrate having a thickness exceeding 50 μm, for example, a glass substrate having a thickness of about 0.5 mm. The TFT array substrate 10 is manufactured by forming the scanning lines 3a, the data lines 6a, the terminals 14, the pixel electrodes 9a, and the like, and similarly, a glass substrate having a thickness exceeding 50 μm, for example, a thickness of about 0.5 mm. The counter substrate 20 is manufactured by forming the counter electrode 21 and the like on the glass substrate using a semiconductor process. At that time, for example, for the TFT for pixel switching, an amorphous silicon film polycrystallized by a method such as laser annealing is used as the active layer, and the gate insulating film is not oxidized by the thermal oxidation method. A film or the like is formed by a CVD method or the like. Since such a method can be performed at a processing temperature of 600 ° C. or lower, it is called a low-temperature process, and a glass substrate can be used for the TFT array substrate 10.

  Next, the TFT array substrate 10 and the counter substrate 20 are bonded to each other with a predetermined gap by the sealing material 52, and then the liquid crystal 50 is injected inward from the liquid crystal injection port 54 formed by the cut portion of the sealing material 52. Next, the liquid crystal injection port 54 is sealed with a sealing material 55 to manufacture an intermediate product 100 ′ of the electro-optical device 1 shown in FIG. In the state of the intermediate product 100 ′, a large number of terminals 14 are exposed in the protruding region 12 of the TFT array substrate 10 from the counter substrate 20.

  On the other hand, as shown in FIG. 4A, a polishing apparatus 200 used in this embodiment includes a ceramic surface plate 210 in which a recess 220 is formed in a portion where an intermediate product 100 ′ of the electro-optical device 1 is disposed. The recess 220 is filled with a wax 250.

  When polishing the intermediate product 100 ′ with the polishing apparatus 200, first, in the first step, the wax 250 is heated to a temperature of about 80 ° C. indirectly or indirectly via the surface plate 210 and melted. Let Then, the intermediate product 100 ′ is overlaid on the surface of the melted wax 250, and the intermediate product 100 ′ is pressed into the recess 220 by the fixing head 260 shown in FIG.

  Here, a number of nozzle holes 265 are formed on the bottom surface of the fixing head 260, and compressed air is ejected from these nozzle holes 265. For this reason, in this embodiment, the intermediate product 100 ′ is pressed against the bottom of the recess 220 of the surface plate 210 by the compressed air jetted from the fixing head 260 without being in contact with the fixing head 260.

  Here, instead of the fixing head 260 shown in FIG. 5 (A), as shown in FIG. 5 (B), a diaphragm 270 having elasticity is put on the product 100 ′ being manufactured and partitioned by this diaphragm 270. Of the two spaces, fluid such as air or liquid is supplied into the space 275 opposite to the side on which the halfway product 100 ′ is disposed, and the halfway product 100 is produced by the diaphragm 270 that is inflated by the fluid pressure. 'May be pressed against the bottom of the recess 220 of the surface plate 210.

  Next, the melted wax 250 is naturally cooled or forcedly cooled to a temperature of 25 ° C. to solidify the wax 250. As a result, as shown in FIG. 4B, the intermediate product 100 ′ is fixed through the wax 250 in the recess 220 of the surface plate 210 with the counter substrate 20 facing upward.

Next, as shown in FIG. 4C, as the lapping step of the second step, the polishing head 280 is disposed above the intermediate product 100 ′, and the polishing head 280 is rotated around the axis. The surface plate 210 is also rotated at a speed different from that of the polishing head 280. In this state, while supplying a suspension of abrasive grains between the polishing head 280 and the product 100 ′ being manufactured, the arrow P As shown in FIG. 1, the surface of the counter substrate 20 of the intermediate product 100 ′ is polished at a speed of about 7.2 μm / min while applying a load of about 150 g / cm ² to the polishing head 280. The thickness is reduced to 25 μm. At that time, a part of the sealing material 55 is also polished.

Next, as a polishing step of the second step, a soft polishing cloth is attached to the lower end of the polishing head 280, and a suspension of abrasive grains is added between the polishing head 280 and the intermediate product 100 ′ as necessary. While being supplied and as indicated by an arrow P, the surface of the polished counter substrate 20 is smoothed while applying a load of about 50 g / cm ² to the polishing head 280. Thereby, the counter substrate 20 has a light transmittance equivalent to that of glass.

  Next, as a third step, the solidified wax 250 is melted by heating to a temperature of about 80 ° C. indirectly or directly through the surface plate 210 as shown in FIG. In addition, the intermediate product 100 ′ is removed from the recess 220 of the surface plate 210. Then, the intermediate product is washed with an organic solvent to remove the wax, followed by water washing and alcohol rinsing, followed by drying.

  After thinning the counter substrate 20 in this way, as shown in FIG. 6A, the intermediate product 100 ′ is turned upside down, and the intermediate product 100 ′ is again formed into the concave portion of the surface plate 210. Fix to 220. At that time, the wax 250 is heated to a temperature of about 80 ° C. and melted, and the intermediate product 100 ′ is manufactured by the fixing head 260 shown in FIG. 5 (A) or the diaphragm 280 shown in FIG. 5 (B). While being pressed against the bottom of the recess 220 of the surface plate 210, the melted wax 250 is cooled and solidified, and as shown in FIG. 100 'is fixed in the recess 220 of the surface plate 210 with wax 250 (first step).

Next, as shown in FIG. 6C, while the polishing head 280 is rotated, the platen 210 is also rotated at a speed different from that of the polishing head 280 to supply a suspension of abrasive grains, and As shown by the arrow P, while applying a load of about 150 g / cm ² to the polishing head 280, the surface of the TFT array substrate 10 of the product 100 ′ being manufactured is polished at a speed of about 7.2 μm / min. The thickness is reduced from 0.5 mm to 25 μm. At that time, a part of the sealing material 55 is also polished (a lapping step in the second step).

Next, a soft polishing cloth is attached to the lower end portion of the polishing head 280, and a suspension of abrasive grains is supplied as necessary, and as indicated by an arrow P, the polishing head 280 is supplied with about 50 g / cm. The surface of the polished TFT array substrate 10 is smoothed while applying a load of about ² . Thereby, the TFT array substrate 10 has a light transmittance equivalent to that of glass (a polishing step in the second step).

  Next, the solidified wax 250 is heated to a temperature of about 80 ° C. and melted, and as shown in FIG. Is removed from the recess 220 (third step). Then, the intermediate product is washed with an organic solvent to remove the wax, followed by water washing and alcohol rinsing, followed by drying.

  Thereafter, as shown in FIG. 6 (E), the flexible substrate 120 on which the driving IC 110 is COF-mounted is applied to the projecting region 12 of the TFT array substrate 10 with an anisotropic conductive film or anisotropic conductive paste. Connect with an anisotropic conductive material.

  At this time, in this embodiment, as shown in FIG. 7, the liquid crystal panel 100 is placed on a base 401 whose surface is subjected to a release treatment with a release material 402 such as grease or fluororesin coating. An anisotropic conductive material 400 is sandwiched between the terminal 14 of the TFT array substrate 10 and the terminal 145 of the flexible substrate 120 and heated and pressurized by the head 403. Therefore, even if the anisotropic conductive material 400 overflows from the TFT array substrate 10 and touches the base 401 due to the thin TFT array substrate 10, the anisotropic conductive material 400 does not adhere to the base 401. . Therefore, when the liquid crystal panel 100 is removed from the base 401, an excessive force is not applied to the TFT array substrate 10, so that the TFT array substrate 10 is not broken. Such a method can also be applied when an IC chip is mounted on the TFT array substrate 10.

(Effect of this embodiment)
As described above, in the present embodiment, when the TFT array substrate 10 and the counter substrate 20 constituting the electro-optical device 1 are thinned, the TFT array substrate 10 and the counter substrate are formed after forming the electro-optical device 1 during production 100 ′. Each of 20 is polished to a predetermined thickness, and the thickness is reduced from 0.5 mm to 50 μm or less, and further to 25 μm or less. Therefore, even when a hard substrate such as a glass substrate is used as the substrate for the electro-optical device such as the TFT array substrate 10 and the counter substrate 20, the electro-optical device 1 can be reduced in weight.

  In this embodiment, since a hard substrate such as a glass substrate is used as the TFT array substrate 10 and the counter substrate 20, a pixel electrode, wiring, and further a nonlinear element can be formed using a semiconductor process.

  In addition, the TFT array substrate 10 and the counter substrate 20 are each as thick as 0.5 mm until the electro-optical device 1 is manufactured. Therefore, the TFT array substrate 10 and the counter substrate 20 are not broken during the manufacturing process.

  Further, since the TFT array substrate 10 and the counter substrate 20 are thinned by polishing instead of chemical etching, the surfaces of the TFT array substrate 10 and the counter substrate 20 are not greatly roughened. Similarly, the sealing material 52 and the sealing material 55 are not deteriorated by the etching solution.

  In addition, a large number of terminals 14 are formed on the TFT array substrate 10, but unlike the chemical etching, the outer surface of the TFT array substrate 10 can be selectively polished in the case of polishing, so that the terminals 14 are damaged. Nor. Moreover, since the terminal 14 is always covered with the wax 250 during polishing, damage to the terminal 14 can be reliably prevented.

  Furthermore, the intermediate product 100 of the electro-optical device 1 can be fixed on the surface plate 210 simply by solidifying the wax 250 that has been melted. The product 100 or the electro-optical device 1 can be detached from the surface plate 210. In addition, if the fixing is performed using the wax 250, the stress for fixing does not concentrate on a part of the product 100 being manufactured, so that the TFT array substrate 10 and the counter substrate 20 are not cracked. In addition, since fluid pressure is used when pressing the intermediate product 100 ′ toward the surface plate 210, a uniform force is applied to the entire surface of the intermediate product 100 ′ against the surface plate 210. Therefore, the intermediate product 100 ′ can be fixed in an appropriate posture, that is, parallel to the reference surface of the surface plate 210. Furthermore, since the wax 250 is melted at a temperature of about 80 ° C., the liquid crystal 50 is not deteriorated.

[Embodiment 2]
In the electro-optical device 1 of the present embodiment, the TFT array substrate 10 and the counter substrate 20 constituting the liquid crystal panel 100 can be curved when they are each thinned to 25 μm or less. As described with reference to FIG. An electro-optical device having a curved display surface can be configured.

  FIG. 8 is an explanatory diagram of the electro-optical device according to Embodiment 2 of the present invention. As shown in FIG. 8, in this embodiment, a cylindrical plate frame 320 having a curved surface with a sheet-like polarizing plate 140 is used. Here, the plate-like frame 320 is made of a light transmissive material such as PET, acrylic, glass, and the like, and is fixed on the table 330.

  In the plate-shaped frame 320, the liquid crystal panel 100 described with reference to FIGS. 1A, 1B, and 1C is overlaid on the convex curved surface to which the polarizing plate 140 is attached. On the panel 100, a sheet-like polarizing plate 150 is stacked in a curved state. Further, a backlight light source 310 made of a cold cathode tube or the like is arranged on the convex curved surface side of the plate frame 320, that is, inside the cylindrical plate frame 320.

  The electro-optical device 1 configured as described above is provided with a curved display surface and can conveniently view an image from a wide angle range.

  In this embodiment, as shown in FIGS. 1A and 8, the liquid crystal panel 100 is curved at a position avoiding the terminals 14 and the liquid crystal inlet 54 shown in FIG. Therefore, since a large stress is not applied to the sealing material 55 and the mounting portion of the flexible substrate 110, the yield and reliability of the electro-optical device 1 are not lowered even if the liquid crystal panel 100 is bent.

[Embodiment 3]
In the electro-optical device 1 of the present embodiment, when the TFT array substrate 10 and the counter substrate 20 constituting the liquid crystal panel 100 are thinned to 25 μm or less, as shown in FIGS. 9A and 9B, the arrows A1, A display device having a curved display surface can be configured by curving in both directions of A2 and arrows B1 and B2. At that time, in most cases, the liquid crystal panel 100 is curved at the central portion in the horizontal direction or at the central portion in the vertical direction.

  Therefore, in this embodiment, in the TFT array substrate 10, the terminals 14 are formed in a region avoiding the central portion in the horizontal direction of the liquid crystal panel 100 or the central portion in the vertical direction. Further, in the liquid crystal panel 100, the liquid crystal inlet 54 is also formed in a region avoiding the central portion in the horizontal direction of the liquid crystal panel 100 or the central portion in the vertical direction. Therefore, according to the present embodiment, even when the liquid crystal panel 100 is bent, no great stress is applied to the mounting portion of the sealing material 55 and the flexible substrate 110. The yield and reliability of the optical device 1 are not lowered.

[Other embodiments]
In the above-described embodiment, both the TFT array substrate 10 and the counter substrate 20 constituting the electro-optical device 1 are thinned. However, even when one of the substrates is thinned by polishing, Weight reduction can be achieved.

  The present invention may also be applied to an active matrix liquid crystal device (panel) using TFD as a pixel switching element or a passive matrix liquid crystal device (panel).

  Furthermore, the present invention may be applied not only to a liquid crystal device but also to an organic electroluminescence type display device shown in FIG.

  FIG. 10 is a block diagram of an active matrix type electro-optical device using a charge injection type organic thin film electroluminescence element.

  An electro-optical device 1p shown in FIG. 10 is an active matrix type that drives and controls a light emitting element such as an EL (electroluminescence) element or an LED (light emitting diode) element that emits light when a driving current flows through an organic semiconductor film. Since all of the light-emitting elements that are display devices and are used in this type of electro-optical device self-emit, there is an advantage that a backlight is not required and that the viewing angle dependency is small.

  In the electro-optical device 1p shown here, on the TFT array substrate 10p, a plurality of scanning lines 103p, a plurality of data lines 106p extending in a direction crossing the extending direction of the scanning lines 103p, and these A plurality of common power supply lines 23p parallel to the data line 106p and a pixel region 15p corresponding to the intersection of the data line 106p and the scanning line 103p are configured. For the data line 106p, a data side driving circuit 101p including a shift register, a level shifter, a video line, and an analog switch is configured. A scanning side drive circuit 104p having a shift register and a level shifter is configured for the scanning line 103p.

  Each pixel region 15p holds a first TFT 31p to which a scanning signal is supplied to the gate electrode via the scanning line 103p, and an image signal supplied from the data line 106p via the first TFT 31p. A storage capacitor 33p to be connected, a second TFT 32p (thin film semiconductor element) to which an image signal held by the storage capacitor 33p is supplied to the gate electrode, and a common power supply line 23p through the second TFT 32p. Thus, a light emitting element 40p into which a driving current flows from the common power supply line 23p is configured. Therefore, since the storage capacitor 33p holds the image signal supplied from the data line 106p via the first TFT 31p, even if the first TFT 31p is turned off, the gate electrode 31p of the second TFT 32p is not connected to the image signal. Is held at a potential corresponding to. Therefore, since the drive current continues to flow from the common power supply line 23p to the light emitting element 40p, the light emitting element 40p continues to emit light and displays an image.

  Also in such an electro-optical device 1p, since the light emitting element 40p, the TFT 31p, the data line 106p, and the like are formed on the TFT array substrate 10p using a semiconductor process, a hard substrate such as a glass substrate is used as the TFT array substrate 10p. However, if the hard substrate is thinned by polishing using wax fixation, the electro-optical device 1p can be reduced in weight. Here, if it is a wax, it melts at a temperature of about 80 ° C., so that the electroluminescent material does not deteriorate.

  In this type of electro-optical device 1p, the surface of the TFT array substrate 10p may be covered with a hard protective substrate such as a glass substrate. In such a configuration, the TFT array substrate 10p or the protective substrate may be covered. If either one is polished, the electro-optical device 1p can be reduced in thickness and weight. Furthermore, if both the TFT array substrate 10p and the protective substrate are thinned to 25 μm or less, the electro-optical device 1p having a curved shape can be manufactured.

[Applied to display devices]
The electro-optical device to which the present invention is applied can be used as a display device of an electronic device such as a mobile computer or a mobile phone. In addition, since the electro-optical device to which the present invention is applied is reduced in thickness and weight, it can be mounted on various household products in addition to the above electronic devices. Especially for electro-optical devices with curved display surfaces, display devices that can be mounted on proof devices with display devices, electronic rice cookers with display devices, water bottles with display devices, in-vehicle display devices, advertising display devices, wrists, etc. It can be used to configure various display devices such as devices and books with display devices.

  In the present invention, a hard substrate such as a glass substrate is used as the substrate for the electro-optical device. However, since the thickness of the substrate for the electro-optical device is 50 μm or less, the weight of the electro-optical device can be reduced. Further, unlike a plastic film substrate, a pixel substrate, a wiring, and further a non-linear element can be formed using a semiconductor process as long as it is a hard substrate such as a glass substrate. In addition, if the electro-optic device substrate is thinned to 50 μm or less, a curved display surface can be formed, so that a new display device can be provided.

(A), (B), and (C) are a plan view, a cross-sectional view, and an enlarged cross-sectional view of an outer peripheral corner portion of a liquid crystal panel, when the electro-optical device according to Embodiment 1 of the present invention is viewed from the counter substrate side. is there FIG. 6 is an equivalent circuit diagram of various elements and wirings in a plurality of pixels formed in a matrix in an image display region of an electro-optical device to which the present invention is applied. (A), (B) is the top view which looked at the halfway product of the liquid crystal panel used for the electro-optical apparatus to which this invention was applied from the counter substrate side, and its sectional drawing. (A)-(D) are process sectional drawings of the grinding | polishing process with respect to a counter substrate among the manufacturing processes of the electro-optical apparatus of this invention. (A), (B) is explanatory drawing of the fixing head and diaphragm which press the product in the middle of manufacture to the surface plate using fluid pressure in the manufacturing method of the electro-optical apparatus of this invention. (A)-(E) are process sectional drawings, such as a grinding | polishing process with respect to a TFT array board | substrate, among the manufacturing processes of the electro-optical apparatus of this invention. FIG. 6 is an explanatory diagram showing a state where a flexible substrate is mounted on a liquid crystal panel in the method for manufacturing an electro-optical device according to Embodiment 1 of the present invention. FIG. 6 is an explanatory diagram of an electro-optical device according to a second embodiment of the invention. FIG. 6 is a plan view and a cross-sectional view of a liquid crystal panel used in an electro-optical device according to Embodiment 3 of the present invention when viewed from a counter substrate side. It is a block diagram of an active matrix type electro-optical device using a charge injection type organic thin film electroluminescence element.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Electro-optical device, 10 TFT array substrate (electro-optical device substrate), 14 terminals, 20 Counter substrate (electro-optical device substrate), 52 Sealing material, 54 Liquid crystal inlet, 55 Sealing material, 100 Liquid crystal panel, 100 ′ Liquid crystal panel intermediate product, 101 outer peripheral corner of TFT array substrate, 201 outer peripheral corner of counter substrate, 200 polishing device, 210 surface plate, 250 wax, 280 polishing head, 310 backlight light source, 320 plate shape Frame, 400 anisotropic conductive material, 401 base, 400 release material

Claims (17)

In an electro-optical device in which an electro-optical material is held by an electro-optical device substrate, and a flexible substrate or an IC chip is mounted on a terminal formed on the electro-optical device substrate.
The electro-optical device is a substrate made of a hard material having a thickness of 50 μm or less.   2. The electro-optical device substrate according to claim 1, wherein the electro-optical material is held on the original substrate made of a hard material having a thickness of more than 50 μm, and after forming the terminals, An electro-optical device, which is a substrate thinned to 50 μm or less by polishing.   3. The electro-optical device substrate according to claim 1, wherein pixels having pixel electrodes for driving the electro-optical material are arranged in a matrix, and a non-linear element for pixel switching is provided in each of the pixels. An electro-optical device formed.   4. The electro-optical device according to claim 1, wherein the electro-optical device substrate is a glass substrate or a quartz substrate.   5. The electro-optical device according to claim 1, wherein the electro-optical device substrate has a chamfered outer peripheral corner portion of a surface opposite to a side holding the electro-optical material. apparatus.   6. The electro-optical device substrate according to claim 1, wherein the terminal is formed in a central region in the vertical direction of the electro-optical device substrate and a region avoiding the central region in the horizontal direction. An electro-optical device.   7. The electro-optical device according to claim 1, wherein the electro-optical device substrate is used in a curved state.   8. The electro-optical device according to claim 1, wherein the electro-optical device substrate is curved in a region avoiding a region where the terminals are formed.   9. The liquid crystal panel according to claim 1, further comprising: a liquid crystal panel in which a liquid crystal as the electro-optical material is held between the two substrates for the electro-optical device bonded together by a sealing material. An electro-optical device.   10. The electro-optical device according to claim 9, wherein each of the two electro-optical device substrates has a thickness of 25 μm or less.   11. The liquid crystal injection port consisting of a discontinuous portion of the sealing material according to claim 9 or 10, wherein the liquid crystal injection port is sealed with a sealing material and avoids a central region in the vertical direction and a central region in the horizontal direction of the liquid crystal panel. An electro-optical device formed by:   12. The electro-optical device according to claim 9, wherein the liquid crystal panel is curved in a region avoiding a position where the liquid crystal injection port is formed.   The plate-shaped frame according to any one of claims 9 to 12, further comprising a light-transmitting plate-like frame having a curved surface on which a sheet-like polarizing member is affixed, the liquid crystal panel being stacked on a convex curve side of the plate-like frame, An electro-optical device, characterized in that a light source for backlight is arranged in the concave curved surface side of the frame.   9. The electro-optical device according to claim 1, wherein an electroluminescence material as the electro-optical material is held on the electro-optical device substrate. In an electro-optical device manufacturing method in which an electro-optical substance is held by an electro-optical device substrate made of a hard material, and a flexible substrate or an IC chip is mounted on a terminal formed on the electro-optical device substrate.
The electro-optical device substrate has a thickness of 50 μm or less,
When a flexible substrate or an IC chip is mounted on the terminal of the electro-optical device substrate, the electro-optical device substrate is placed on a base surface that has been subjected to a mold release process, and in this state, the terminal A method of manufacturing an electro-optical device, wherein an anisotropic conductive material is sandwiched between the flexible substrate and the IC chip and heated and pressurized.   An electro-optical device manufactured by the manufacturing method defined in claim 15.   A display device comprising the electro-optical device defined in any one of claims 1 to 16.

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