JP3847500B2 - 半導体ウェハ平坦化加工方法および平坦化加工装置 - Google Patents

半導体ウェハ平坦化加工方法および平坦化加工装置 Download PDF

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Publication number
JP3847500B2
JP3847500B2 JP28768299A JP28768299A JP3847500B2 JP 3847500 B2 JP3847500 B2 JP 3847500B2 JP 28768299 A JP28768299 A JP 28768299A JP 28768299 A JP28768299 A JP 28768299A JP 3847500 B2 JP3847500 B2 JP 3847500B2
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wafer
polishing
semiconductor wafer
polishing tool
abrasive grains
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JP2001110763A5 (enExample
JP2001110763A (ja
Inventor
感 安井
創一 片桐
雅彦 佐藤
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Hitachi Ltd
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Hitachi Ltd
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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP28768299A 1999-10-08 1999-10-08 半導体ウェハ平坦化加工方法および平坦化加工装置 Expired - Fee Related JP3847500B2 (ja)

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JP28768299A JP3847500B2 (ja) 1999-10-08 1999-10-08 半導体ウェハ平坦化加工方法および平坦化加工装置

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JP28768299A JP3847500B2 (ja) 1999-10-08 1999-10-08 半導体ウェハ平坦化加工方法および平坦化加工装置

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JP2001110763A JP2001110763A (ja) 2001-04-20
JP2001110763A5 JP2001110763A5 (enExample) 2005-02-17
JP3847500B2 true JP3847500B2 (ja) 2006-11-22

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JP28768299A Expired - Fee Related JP3847500B2 (ja) 1999-10-08 1999-10-08 半導体ウェハ平坦化加工方法および平坦化加工装置

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111716253A (zh) * 2019-03-19 2020-09-29 东芝存储器株式会社 研磨装置及研磨方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5676832B2 (ja) * 2001-06-08 2015-02-25 エルエスアイ コーポレーション 半導体ウエハの化学的機械的研磨における欠陥密度低減方法及びスラリ流量制御方法
SG10201810852TA (en) * 2014-10-03 2019-01-30 Ebara Corp Substrate processing apparatus and processing method
JP7562994B2 (ja) * 2020-06-08 2024-10-08 株式会社Sumco ウェーハ外周部の研磨装置
JP7764258B2 (ja) * 2022-01-14 2025-11-05 株式会社ディスコ ウェーハの研磨方法及び貼り合わせワークの研磨方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111716253A (zh) * 2019-03-19 2020-09-29 东芝存储器株式会社 研磨装置及研磨方法

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