JP3845511B2 - Grinding apparatus and grinding method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a machining method and a machining apparatus for performing machining while supplying a machining fluid to a contact portion between a working element and a workpiece when various kinds of machining are performed by bringing the working element into contact with the workpiece. It is.
[0002]
[Prior art]
In various types of processing apparatuses, when processing is performed by bringing the action element into contact with the workpiece, the workpiece is supplied to the contact portion between the action element and the workpiece, and the workpiece is cooled by cooling the contact portion. To improve the processing accuracy and quality.
[0003]
As a processing apparatus that performs processing while supplying a processing liquid, for example, a dicing apparatus 50 for dicing a semiconductor wafer as shown in FIG. 14 is well known. In this dicing apparatus 50, the semiconductor wafer W as a workpiece is held by the frame F via the holding tape T and stored in the cassette 71 as shown in FIG.
[0004]
On the surface of the semiconductor wafer W, there are streets S that are a plurality of linear regions arranged in a grid at predetermined intervals, and circuit patterns are applied to a number of rectangular regions partitioned by the streets S. Yes.
[0005]
The semiconductor wafers W housed in the cassette 71 are taken out one by one by the carry-in / out means 72 to the temporary placement area 73, sucked by the conveyance means 74, and conveyed to the chuck table 58 by the rotation of the conveyance means 74. Suction hold.
[0006]
When the semiconductor wafer W is held on the chuck table 58, the chuck table 58 moves in the X-axis direction, is positioned immediately below the alignment means 75, and a street to be cut is detected by processing such as pattern matching. Further, when the chuck table 58 is moved in the X-axis direction, it receives the action of the cutting means 77 having the rotating cutting blade 76 which is a working element while receiving the supply of the cutting liquid which is a kind of machining liquid. The detected street is cut. Thus, dicing is performed by cutting the streets one by one vertically and horizontally, and individual chips are formed.
[0007]
As shown in FIG. 16, the cutting means 77 has a configuration in which a cutting blade 76 is covered with a blade cover 78, and the outer peripheral portions 79 on both surfaces of the cutting blade 76 are electrodeposited with abrasive grains such as diamond abrasive grains. It is fixed by (electroforming) to form fixed abrasive grains. Further, as shown in FIG. 17, the cutting means 77 is provided with cutting fluid nozzles 82a and 82b so as to sandwich a cutting blade 76 attached to the tip of a rotary spindle 81 rotatably supported by a spindle housing 80 from both sides. During cutting, the cutting fluid nozzles 82a and 82b supply about 2 liters of cutting fluid per minute to cool the semiconductor wafer W.
[0008]
[Problems to be solved by the invention]
However, in the cutting means 77 having such a configuration, the cutting fluid spreads over the entire surface of the semiconductor wafer W to some extent, and the cutting fluid is supplied mainly to the contact portion between the cutting blade 76 and the semiconductor wafer W. Regardless, the cooling effect of the contact portion is not sufficient. Therefore, chipping is likely to occur at the edge of the chip formed by dicing, and there is a problem in terms of processing accuracy and chip quality.
[0009]
Further, when a large amount of the cutting fluid for the semiconductor wafer W is supplied, cutting waste generated by cutting is mixed with the cutting fluid and discharged in a large amount, which causes an environmental problem.
[0010]
Furthermore, since the cutting fluid is sufficiently supplied to the contact portion between the semiconductor wafer W and the cutting blade 76, the cutting fluid is used more than necessary, which is wasteful and uneconomical. In particular, it is extremely uneconomical when expensive water such as distilled water is used as the cutting fluid to improve chip quality.
[0011]
The above-described problems occur not only in the above-described dicing apparatus but also in various processes in which processing is performed while supplying the processing liquid to the contact portion between the working element and the workpiece. Therefore, in various types of processing, there is a problem to be solved by reducing the amount of processing liquid used without causing deterioration in processing accuracy and the quality of a product formed by processing.
[0012]
[Means for Solving the Problems]
  As a specific means for solving the above problems, the present invention provides:A chuck table that holds and rotates a workpiece, and a grinding means in which a spindle is rotatably supported at the center of the spindle housing, a disc mounter is mounted at the lower end of the spindle, and a grinding wheel is mounted at the lower portion of the mounter. A grinding wheel disposed in a wheel base constituting a grinding wheel and disposed in an arc shape through a grinding water supply path for circulating the grinding water in the spindle and a branch path of the mounter The grinding water supply port for supplying grinding water to the nozzle and the jet outlet for ejecting gas are directed toward the chuck table, and the gas ejected from the jet outlet pushes the grinding water into the contact portion between the workpiece and the grinding wheel. Grinding apparatus comprising at least gas ejection meansIs to provide.
[0013]
  The present invention also provides:A chuck table that holds and rotates a workpiece, and a grinding means in which a spindle is rotatably supported at the center of the spindle housing, a disc mounter is mounted at the lower end of the spindle, and a grinding wheel is mounted at the lower portion of the mounter. A grinding wheel disposed in a wheel base constituting a grinding wheel and disposed in an arc shape through a grinding water supply path for circulating the grinding water in the spindle and a branch path of the mounter The grinding water supply port for supplying the grinding water to the nozzle and the jet outlet for ejecting the gas are directed toward the chuck table, and the gas ejected from the jet outlet pushes the grinding water into the contact portion between the workpiece and the grinding wheel. A grinding method for grinding a workpiece by a grinding device comprising at least a gas jetting means, wherein a chuck table for holding the workpiece is rotated. While rotating the spindle, the grinding means is lowered to press the rotating grinding wheel against the workpiece, and the grinding water is supplied to the workpiece from the grinding water supply port, and the gas is supplied to the gas ejection means. Thus, the present invention provides a grinding method in which grinding water is pushed into a contact portion between a workpiece and a grinding wheel by a gas ejected from an ejection port to grind the workpiece.
[0014]
  Further, it is an additional requirement that air of 3 to 5 atmospheres be ejected from the outlet of the gas ejection means at 5 to 20 liters / minute.
[0015]
  According to the grinding apparatus and the grinding method configured as described above, the grinding water is forcibly pushed into the contact portion between the grinding wheel and the workpiece by ejecting a gas such as air, which is extremely effective and efficient. Grinding water is supplied to the contact portion. Therefore, the cooling of the workpiece is promoted, and the surface burn hardly occurs. In addition, grinding distortion and cracks are unlikely to occur, the surface roughness is eliminated, mirror polishing is possible, and the workpiece can be ground thinly without reducing the spindle rotation speed.
[0016]
  Furthermore, the degree of wear of the grinding wheel is reduced, the life is increased, the load current of the motor driving the spindle is reduced, and the stability is increased.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
As a first embodiment of the present invention, a grinding apparatus 30 shown in FIG. 1 and a method of grinding a semiconductor wafer while supplying grinding water using the grinding apparatus 30 will be described as an example.
[0018]
In the grinding apparatus 30, a semiconductor wafer, which is a workpiece to be ground, is unloaded from the cassette 37b to the center alignment table 37d by the unloading / unloading means 37c, and is held in the vicinity of the center alignment table 37d by the transfer means 35b. Is mounted on the chuck table 33.
[0019]
The chuck table 33 is positioned immediately below the grinding means 34b, which is a processing means, by the rotation of the turntable 32. The chuck table 33 rotates and is an action element attached to the lower part of the grinding means 32b. The grinding wheel is lowered while rotating and an appropriate pressing force is applied, whereby grinding of the semiconductor wafer, for example, rough finishing is performed here.
[0020]
Further, the turntable 32 further rotates and is positioned immediately below the grinding means 34a, the chuck table 33 rotates, and the grinding wheel mounted on the lower part of the grinding means 34a descends while rotating to apply an appropriate pressing force. As a result, grinding of the semiconductor wafer, for example, mirror finishing is performed here.
[0021]
The chuck table 33 holding the semiconductor wafer thus ground is moved to the vicinity of the temporary holder 36a by the rotation of the turntable 32, and the semiconductor wafer after grinding is transferred to the temporary holder 36a by the transfer means 35a. And cleaning is performed. And after washing | cleaning, after conveying to the center alignment table 37e, it accommodates in the cassette 37a by the carrying in / out means 37c.
[0022]
A wall 38 is erected from the end of the work table 31, and a pair of rails 39 are provided in the vertical direction on the inner surface of the wall 38, and a slide plate 40 is provided along the rails 39. As the plate moves up and down, the grinding means 34a and 34b fixed to the slide plate 40 move up and down.
[0023]
As shown in FIG. 2, the grinding means 34 a and 34 b have a spindle 42 rotatably supported at the center portion of the spindle housing 41, and a mounter 43 on a disc is attached to the lower end of the spindle 42. The grinding wheel 44 is mounted on the lower part. In addition, as shown in FIG. 6, a grinding water supply passage 45 through which the grinding water flows is passed through the spindle 42, and this grinding water supply passage 45 passes through a branch passage 46 in the mounter 44 and is connected to the grinding wheel 44. It penetrates to the grinding water supply port 47. Further, a grinding wheel 48 as an action element is provided on the outside of the grinding water supply port 47 so as to protrude downward.
[0024]
In the vicinity of the chuck table 33, there is provided gas ejection means 10 in which the nozzle 11 stands from the work table 31, and the nozzle 12 at the tip thereof is directed toward the chuck table 33. As shown in FIG. 2, the gas ejection means 10 is supplied with a gas such as high-pressure air from the gas supply unit 13 and ejects a gas 14 from the ejection port 12. In addition, the gas ejection means 10 may be comprised so that the gas 14 may be ejected from the one ejection port 12 provided in the nozzle 11 which can rotate and move up and down like FIG. 3 (A). As shown in FIG. 3B, the nozzle 11 may be configured such that a plurality of jets 12 are arranged in a horizontally extending manner so that the gas 14 is jetted from each jet 12. Further, as shown in FIG. 3C, the gas ejection means 10 may be configured such that the nozzle 11 is provided with a slit-shaped ejection port 12 in the horizontal direction.
[0025]
The vertical movement of the grinding means 34 (34a, 34b), the rotation of the spindle 42, and the rotation of the chuck table 33 are controlled by the control unit 20 and configured as shown in FIG.
[0026]
A pulse motor 21 is provided on the outer upper portion of the wall body 38, and a drive unit 23 is engaged with a ball screw 22 that is driven by the pulse motor 21 and rotates. The drive unit 23 passes through the wall body 38 and is connected to the slide plate 40. Then, the control unit 20 drives the pulse motor 21 via the pulse motor driver 24, and the drive unit 23 moves up and down by rotating the ball screw 22 as the pulse motor 21 rotates. The grinding means 34 moves up and down by moving up and down along 39. The drive unit 23 is directly connected to the control unit 20 and drives the rotation of the spindle 42 under the control of the control unit 20.
[0027]
The linear scale 25 is arranged in the vertical direction outside the wall body 38, and the position information of the drive unit 23 on the linear scale 25 is transferred to the control unit 20, and this position information is the grinding means in the control unit 20. 34 is used for precise control of vertical movement.
[0028]
The control unit 20 is connected to an encoder 27 and a servo motor 28 provided below the chuck table 33 via a servo driver 26. By driving the encoder 27 and the servo motor 28, the control unit 20 The rotation can be controlled.
[0029]
When grinding the semiconductor wafer W held on the chuck table 33 by the grinding means 34 (34a, 34b), the chuck table 33 is rotated and the grinding means 34 (34a, 34b) is lowered while the spindle 42 is rotated. Then, grinding is performed by pressing the grinding wheel 48 rotating with respect to the semiconductor wafer W. At the same time, grinding water, which is a machining liquid, is introduced from the upper part of the grinding water supply path 45, and the semiconductor wafer W is fed from the grinding water supply port 47, which is a machining liquid supply means, via the grinding water supply path 45 and the branch path 46. Grinding water 49 is supplied.
[0030]
The grinding wheel 44 has a wheel base 44a. As shown in FIG. 5, the grinding wheel 44 has a grinding water supply port 47 for supplying grinding water in a circular arc shape at constant intervals, and a constant outside thereof. A grinding wheel 48 is arranged in an arc shape at each interval. And the upper part is being fixed to the mounter 43 with the volt | bolt etc. The grinding wheel 48 is a fixed abrasive in which abrasive grains such as diamond abrasive grains are fixed on one surface by a bonding agent such as resinoid bond.
[0031]
When the surface of the semiconductor wafer is ground using the grinding apparatus 30 configured as described above, the semiconductor wafer W to be ground is placed on the chuck table 33 and held as shown in FIG. Under the control of 20, the chuck table 33 is rotated, the spindle 42 is rotated and the grinding wheel 44 is rotated while the grinding means 34 (34a, 34b) is lowered, and the rotating grinding wheel 48 is appropriately pressed. The surface of the semiconductor wafer W is ground by bringing it into contact with the semiconductor wafer W while applying pressure.
[0032]
At this time, expensive pure water is supplied to the grinding water supply passage 45 at a rate of 0.4 liter / minute, and the pure water is supplied to the semiconductor wafer W as the grinding water 15 from the grinding water supply port 47 via the branch passage 46. Is done.
[0033]
At the same time, gas is supplied to the gas jetting means 10 and the air 14 having a pressure of 3 to 5 atm is preferably jetted from the air outlet 12 at 5 to 20 liters / minute. As the grinding water, not only pure water but also lubricating oil or the like can be used. As the gas ejected from the gas ejecting means 10, in addition to air, an inert gas and a machining liquid in a mist form are used. A gas mixed with can be used.
[0034]
The flow of the grinding water 15 is increased by the jetted air 14 and forcibly enters a slight gap at the contact portion between the semiconductor wafer W and the grinding wheel 48 as shown in FIG. And the cooling water of the semiconductor wafer W is further accelerated | stimulated by generation | occurrence | production of the vaporization heat by vaporization of grinding water by the grinding water which entered in this way.
[0035]
Thus, even if the supply amount of the grinding water is as small as 0.4 liter / minute, the cooling of the semiconductor wafer W is promoted by the ejection of air, and the surface burn of the semiconductor wafer W is less likely to occur. Specifically, when air was used, surface burning did not occur even after grinding about 300 semiconductor wafers, but when air was not used, grinding was not possible in the second grinding. This was confirmed by experiments. Therefore, when air is not used, it is necessary to supply cutting water of 2 liters / minute or more as in the prior art.
[0036]
Further, when air is supplied, grinding distortion and cracks are less likely to occur in the semiconductor wafer W, the surface roughness is eliminated and mirror surface grinding becomes possible, and the thickness of the semiconductor wafer can be reduced without reducing the rotational speed of the spindle 42. Can be thinly ground, for example, to 200 μm or less.
[0037]
Furthermore, wear of the grinding wheel 48 is reduced and the service life is extended. Specifically, when grinding is performed by supplying only grinding water as in the prior art, and when grinding is performed by supplying air 14 from the gas ejection means 10 and performing grinding as in the present invention. As a result of measuring the wear amount of the grinding wheel 48 for each of the above, the graph shown in FIG. 8 was obtained.
[0038]
In FIG. 8, the horizontal axis (X-axis) represents the number of grindings, and the vertical axis (Y-axis) represents the amount of wear. In either case, the amount of wear increases as the number of grindings increases. Although there is a proportional relationship, the slope of the straight line in the grinding of the present invention using air is 0.6969, and the slope of the straight line in the conventional grinding not using air is 1.0034. In the case of, the inclination of the straight line is smaller by about 30%, and the degree of wear is smaller. That is, it was confirmed that the grinding of the present invention can extend the life of the grinding wheel by about 30%.
[0039]
In order to prevent the rotation speed of the spindle 42 from being reduced due to friction between the grinding wheel 48 and the semiconductor wafer W during grinding, an additional current may be applied to the motor that drives the spindle 42. In the case of the grinding of the invention, it was confirmed by experiments that the grinding liquid enters a slight gap formed between the grinding wheel 48 and the semiconductor wafer W, so that the friction is small and the additional current can be reduced. The experimental results are shown in the graph of FIG. 9 with the number of grinding on the horizontal axis and the additional current on the vertical axis. In the case of the grinding of the present invention, the average is about 0.7 amperes than in the case of conventional grinding. It was confirmed that the additional current can be reduced as much as possible. Furthermore, as shown in the graph, it was confirmed that the steep increase of the additional current due to the wear variation of the grinding wheel 48 seen in the conventional grinding is eliminated and the stability of the additional current is increased.
[0040]
Next, as a second embodiment of the present invention, a dicing apparatus for dicing a semiconductor wafer and a method for dicing a semiconductor wafer while supplying a cutting fluid in the dicing apparatus will be described as an example. Note that the dicing apparatus described here differs from the dicing apparatus 50 described in the prior art only in the configuration of the cutting means, and other than that, it is configured in the same manner as in the prior art. The description is omitted.
[0041]
As shown in FIG. 10, the cutting means 51 that is a processing means has a configuration in which a cutting blade 52 that is an action element is covered with a blade cover 53, and the outer peripheral portions 54 on both sides of the cutting blade 52 are made of diamond grinding. Abrasive grains such as grains are fixed by electrodeposition (electroforming) to form fixed abrasive grains. Further, as shown in FIG. 11, two cutting fluid nozzles 55a and 55b, which are machining fluid supply means, are arranged in parallel with the cutting blade 52 at a certain distance from the blade cover 53 so as to sandwich the cutting blade 52. It is installed.
[0042]
As shown in FIG. 11, a cutting fluid nozzle 56 for supplying a cutting fluid as a processing fluid is disposed near the contact portion between the cutting blade 52 and the semiconductor wafer W at a position on the extended line of the surface of the cutting blade 52. Further, on the outside thereof, gas ejection means 57 for ejecting a gas such as high-pressure air is disposed.
[0043]
When cutting the semiconductor wafer W, which is a workpiece, using the cutting means 51 configured in this way, a cutting fluid, for example, water is supplied from each cutting fluid nozzle, and the semiconductor wafer W is sucked and held. The chuck table 58 as the holding means moves in the X-axis direction, and the cutting blade 52 as the action element rotates to form dicing grooves.
[0044]
As shown in FIG. 11, the cutting water supplied from the cutting fluid nozzles 55 a and 55 b flows toward the contact portion between the cutting blade 52 and the semiconductor wafer W, and the cutting fluid supplied from the cutting fluid nozzle 56 is also It flows toward the contact part. Further, the cutting fluid supplied from the cutting fluid nozzle 56 is concentrated on the contact portion by the air ejected from the gas ejection means 57, and the cutting fluid is sufficiently supplied to the contact portion, and the cutting blade 52 and the semiconductor wafer W Intrusions into the slight gap formed between the two and cooling is promoted.
[0045]
Moreover, the evaporation of the cutting fluid is promoted by the ejection of air, and the heat of the contact portion is taken away by the heat of vaporization, so that the cooling effect is further increased.
[0046]
As described above, when the cutting fluid is concentrated on the contact portion between the cutting blade 52 and the semiconductor wafer W and cooling of the contact portion is promoted, chipping is unlikely to occur in the semiconductor wafer W during cutting, and processing accuracy is increased. It was confirmed that the quality of the chip was improved.
[0047]
Note that the cutting means may be configured as shown in FIGS. In the cutting means 62 in the example of FIGS. 12 and 13, two cutting fluid nozzles 60a and 60b are arranged in parallel with the cutting blade 59 at a certain distance so as to sandwich the cutting blade 59, and further Two gas ejection means 61a and 61b are arranged in parallel on the outside. A large number of air jets (not shown) are provided on the cutting fluid nozzle side of the gas jetting means 61a and 61b.
[0048]
When air is ejected while supplying the cutting fluid in such a configuration, the cutting fluid supplied from the cutting fluid nozzle 60a is mostly composed of the cutting blade 59 and the semiconductor wafer W by the air ejected from the gas ejection means 61a. Concentrate on one side of the contact. Similarly, most of the cutting fluid supplied from the cutting fluid nozzle 60b is concentrated on the other side of the contact portion between the cutting blade 59 and the semiconductor wafer W by the air ejected from the gas ejection means 61b.
[0049]
Thus, the cutting water enters the contact portion between the cutting blade and the semiconductor wafer W more than in the case of the example of FIG. 11, and the cooling effect is further enhanced. As a result, chip processing accuracy and quality are further improved.
[0050]
In the present embodiment, the grinding apparatus and the dicing apparatus are described as examples of the processing apparatus, but the present invention is not limited to these. For example, a shaft grinder that grinds the outer peripheral surface of a shaft made of cylindrical iron, a surface grinder that performs various processing on the surface of stone, glass, metal, etc., a cutting machine that cuts various hard materials, a semiconductor ingot The present invention can also be applied to a semiconductor ingot cutting machine or the like for slicing.
[0051]
In addition, there are various working elements used in these various apparatuses, such as natural diamond abrasive grains, artificial diamond abrasive grains, CBN abrasive grains, carborundum abrasive grains, alundum abrasive grains, Any fixed abrasive that is a grindstone hardened by vitrified bond, metal bond, resinoid bond, electrodeposition, electroforming, or the like may be used.
[0052]
In addition, when the processing apparatus is installed in a relatively sealed room such as a clean room, the gas ejected from the gas ejection means is preferably air. This is because in the case of an inert gas, the operator may have difficulty breathing.
[0053]
【The invention's effect】
According to the processing apparatus and the processing method configured as described above, the processing liquid is forcibly pushed into the contact portion between the working element and the workpiece by ejecting a gas such as air, which is extremely effective and efficient. The working liquid is supplied to the gas, and the gas is blown to promote the vaporization of the working liquid, and the heat of vaporization takes the heat of the contact portion to increase the cooling effect.
[0054]
Therefore, even if the supply amount of the processing liquid is significantly smaller than the conventional one, for example, 1/5 or less, processing comparable to the conventional one is possible. For example, in the surface grinding of a semiconductor wafer, it can be achieved conventionally. The remaining 200 μm or less thin grinding and mirror polishing can be performed. In addition, the amount of wear of the grinding wheel is reduced by reducing friction during grinding, and the life of the grinding wheel can be extended.
[0055]
Further, in the dicing of the semiconductor wafer, the contact portion is sufficiently cooled by the heat of vaporization in combination with the forced supply of the machining liquid into the contact portion between the working element and the semiconductor wafer. Chipping is less likely to occur on both sides of the chip, making it possible to produce high quality chips.
[0056]
The present invention is not limited to a cutting device such as a grinding device or a dicing device, but can be applied to all processing devices that process a workpiece with an action element while supplying the processing fluid. By saving energy, environmental problems and economic problems can be solved simultaneously.
[0057]
In addition, the quality of the workpiece can be made equal to that of the prior art, and an excellent effect of enabling high quality processing that could not be achieved conventionally is achieved.
[Brief description of the drawings]
FIG. 1 is a perspective view showing an external appearance of a grinding apparatus which is a first embodiment of a processing apparatus according to the present invention.
FIG. 2 is an explanatory view showing a grinding means, a chuck table and a gas ejection means of the grinding apparatus.
FIG. 3 is a perspective view showing an example of gas ejection means disposed in the grinding apparatus.
FIG. 4 is an explanatory view showing a configuration of a main part of the grinding apparatus.
FIG. 5 is an explanatory view showing a grinding wheel constituting the grinding means of the grinding apparatus.
FIG. 6 is an explanatory view showing a state in which grinding water is supplied using the grinding apparatus and air is blown to grind the semiconductor wafer.
7 is an enlarged view of a portion indicated by A in FIG.
FIG. 8 is a graph showing the relationship between the number of grinding and the wear amount of a grinding wheel when a semiconductor wafer is ground using the grinding apparatus according to the present invention.
FIG. 9 is a graph showing the relationship between the number of grinding and the spindle additional current value when a semiconductor wafer is ground using the grinding apparatus.
FIG. 10 is an explanatory view showing a cutting means of a dicing apparatus which is a second embodiment of the processing apparatus according to the present invention.
FIG. 11 is an explanatory view showing a first configuration example of the cutting means and a state in which the semiconductor wafer is diced while supplying cutting water and blowing air using the cutting means.
FIG. 12 is an explanatory view showing a second configuration example of the cutting means and a state in which the semiconductor wafer is diced while supplying cutting water and blowing air using the cutting means.
FIG. 13 is an explanatory view showing a second configuration example of the cutting unit and a state in which the semiconductor wafer is diced while supplying cutting water and blowing air using the cutting unit.
FIG. 14 is a perspective view showing an appearance of a dicing apparatus.
FIG. 15 is an explanatory view showing the surface of a semiconductor wafer held by a frame.
FIG. 16 is an explanatory view showing conventional cutting means in a dicing apparatus.
FIG. 17 is an explanatory diagram showing the configuration of the cutting means and how the semiconductor wafer is diced while supplying cutting water using the cutting means.
[Explanation of symbols]
10 …… Gas ejection means 11 …… Nozzle 12 …… Jet 13 …… Gas supply unit
14 …… Air
20 …… Control unit 21 …… Pulse motor 22 …… Ball screw 23 …… Drive unit
24 …… Pulse motor driver 25 …… Linear scale
26 …… Servo driver 27 …… Encoder 28 …… Servo motor
30 …… Grinding device 31 …… Working table 32 …… Turntable
33 …… Chuck table 34, 34a, 34b …… Grinding means
35a, 35b ... Conveying means 36a, 36b ... Temporary cradle
37a, 37b …… Cassette 37c …… Loading / unloading means
37d, 37e …… Center alignment table 38 …… Wall body 39 …… Rail
40 …… Slide plate 41 …… Spindle housing 42 …… Spindle
43 …… Mounter 44 …… Grinding wheel 44a …… Wheel base
45 …… Grinding water supply path 46 …… Branch path 47 …… Grinding water supply port
48 …… Grinding wheel 49 …… Grinding water
50 …… Dicing machine 51 …… Cutting means 52 …… Cutting blade
53 …… Blade cover 54 …… Outer periphery 55a, 55b …… Cutting fluid nozzle
56 …… Cutting fluid nozzle 57 …… Gas ejection means 58 …… Blade cover
59 …… Cutting blade 60a, 60b …… Cutting fluid nozzle
61a, 61b …… Gas ejection means 62 …… Cutting means
71 …… Cassette 72 …… Loading / unloading means 73 …… Temporary storage area
74 …… Conveying means 75 …… Alignment means 76 …… Cutting blade
77 …… Cutting means 78 …… Blade cover 79 …… Blade cover
80 …… Spindle housing 81 …… Rotating spindle
82a, 82b ... Cutting fluid nozzle

Claims (3)

A chuck table that holds and rotates a workpiece, and a grinding machine in which a spindle is rotatably supported at the center of a spindle housing, a mounter on a disc is mounted at the lower end of the spindle, and a grinding wheel is mounted at the lower part of the mounter A grinding device including means,
Grinding water is supplied to a grinding water supply path that is disposed on a wheel base constituting the grinding wheel and that passes through the spindle, and that passes through the branching path of the mounter. A grinding water supply port,
A gas jetting means for injecting the grinding water into a contact portion between the workpiece and the grinding stone by the gas jetted from the jetting port, the jetting port for jetting gas being directed toward the chuck table;
Grinding device composed at least from. A chuck table that holds and rotates a workpiece, and a grinding machine in which a spindle is rotatably supported at the center of a spindle housing, a mounter on a disc is mounted at the lower end of the spindle, and a grinding wheel is mounted at the lower part of the mounter A grinding device including means,
Grinding water is supplied to a grinding water supply path that is disposed on a wheel base constituting the grinding wheel and that passes through the spindle, and that passes through the branching path of the mounter. A grinding water supply port,
A gas jetting means for injecting the grinding water into a contact portion between the workpiece and the grinding stone by the gas jetted from the jetting port, the jetting port for jetting gas being directed toward the chuck table;
A grinding method for grinding a work piece by a grinding device constituted at least from
While rotating the chuck table holding the workpiece and rotating the spindle, the grinding means is lowered to press the rotating grinding wheel against the workpiece, and the workpiece is fed from the grinding water supply port. Grinding water is supplied to the workpiece, gas is supplied to the gas ejection means, and the grinding water is pushed into the contact portion between the workpiece and the grinding wheel by the gas ejected from the ejection port. Grinding method to grind. The grinding method according to claim 2, wherein air of 3 to 5 atm is ejected from an outlet of the gas ejection means at 5 to 20 liters / minute.

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