JP3838570B2 - Manufacturing method of high frequency package - Google Patents

Manufacturing method of high frequency package Download PDF

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Publication number
JP3838570B2
JP3838570B2 JP2003163429A JP2003163429A JP3838570B2 JP 3838570 B2 JP3838570 B2 JP 3838570B2 JP 2003163429 A JP2003163429 A JP 2003163429A JP 2003163429 A JP2003163429 A JP 2003163429A JP 3838570 B2 JP3838570 B2 JP 3838570B2
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heat sink
sink plate
ring
shaped frame
manufacturing
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JP2004363520A (en
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明義 小阪田
浩一 中洲
伊知郎 村木
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Sumitomo Metal SMI Electronics Device Inc
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Sumitomo Metal SMI Electronics Device Inc
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Priority to US10/859,526 priority patent/US20040246682A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

【０００１】
【発明が属する技術分野】
本発明は、半導体素子からの発熱を放熱させるために基台にねじ止めされるヒートシンク板と、セラミック製のリング状枠体を接合して形成される高周波用パッケージの製造方法に関する。
【０００２】
【従来の技術】
従来から、高周波用パッケージには、シリコンや、ガリウム砒素電界効果トランジスタ等の高周波、高出力の半導体素子が実装され、例えば、ＲＦ（Ｒａｄｉｏ Ｆｒｅｑｕｅｎｃｙ）基地局用等のために用いられている。高周波用の半導体素子は、作動時の発熱が大きいので、発生する熱を大気中に良好に放散させなければ、装置を正常に作動させることができなくなる恐れがある。そこで、高周波用パッケージは、半導体素子を実装するためのキャビティ部が、半導体素子の高周波の領域での電気特性を悪化させないために、略長方形状をした高放熱特性を有する金属板からなるヒートシンク板上に形成された半導体素子実装領域をセラミック製のリング状枠体で囲繞するように接合して形成されている。そして、高周波用パッケージは、半導体素子が実装された後、絶縁体の上面に接合される蓋体でキャビティ部を気密に封止するようになっている。また、高周波信号は、絶縁体上面と蓋体との間に接合された外部接続端子を介して入出力されるようになっている。そして、半導体素子が封止された高周波用パッケージは、ヒートシンク板に放熱された熱を更に外部に放熱させるための基台に、ヒートシンク板の略長方形状の長手方向の両端部に形成されている切り欠き部にねじが取り付けられてねじ止めして固定されている。
【０００３】
図５（Ａ）、（Ｂ）に示すように、従来の高周波用パッケージ５０には、セラミックと熱膨張係数が近似し、しかも放熱特性がよい、例えば、銅タングステン（Ｃｕ−Ｗ）系の複合金属板からなるヒートシンク板５１と、アルミナ（Ａｌ２Ｏ３）等からなるセラミック製のリング状枠体５２が用いられている。そして、高周波用パッケージ５０は、ヒートシンク板５１の中央部に、リング状枠体５２がその裏面側に形成されたメタライズパターンにＡｇ−Ｃｕろう５３を介して載置され、加熱炉で加熱されてろう付け接合されて形成されている。このろう付け接合に併せて、リング状枠体５２には、外部と接続するための金属部材からなる外部接続端子５４がリング状枠体５２の表面側に形成されたメタライズパターンにＡｇ−Ｃｕろう５３を介して載置され、加熱炉で加熱されてろう付け接合されている。更に、ヒートシンク板５１とリング状枠体５２及び外部接続端子５４の金属表面には、Ｎｉめっき及びＡｕめっきが施されている。なお、ヒートシンク板５１の長手方向の両端部には、ヒートシンク板５１からの熱を更に外部に放熱させるための基台５５に取り付けてねじ５６でねじ止めして固定するための切り欠き部５７が設けられている。
【０００４】
高周波用パッケージには、ヒートシンク板と基台の間の放熱特性や、電気的特性を向上させることを目的に、ヒートシンク板と基台の間にインジウムシートを挟んでねじで締め付けているもの（例えば、特許文献１参照）や、ヒートシンク板の長手方向の端部に突起を設けてねじで締め付けているものが提案されている（例えば、特許文献２参照）。
【０００５】
【特許文献１】
特開２００１−２３０３４９号公報
【特許文献２】
特開平４−２３３７５２号公報
【０００６】
【発明が解決しようとする課題】
しかしながら、前述したような従来の高周波用パッケージの製造方法は、次のような問題がある。
（１）ヒートシンク板や、外部接続端子の熱膨張係数は、リング状枠体の熱膨張係数に近似させてはいるが、完全に一致させることが難しいので、Ａｇ−Ｃｕろう等の高温ろう材でろう付け接合を行うときに接合部に応力が発生し、接合して形成した接合体に反りが発生するのを防止することができず、決められた許容範囲を超える反りが発生し、作製された高周波用パッケージの反りの選別検査を行って、許容範囲内のみを検出している。特に、ヒートシンク板の基台との接合面である底面の反りの形態が凹形状となる場合には、基台に取り付けた時に基台との間に空間が発生し、放熱特性や、電気的特性が低下するので、凸形状のもののみを検出せざるを得ない。従って、選別工程が必要となると同時に歩留まりの低下をきたし、高周波用パッケージのコスト高となっている。
（２）ヒートシンク板と基台の間にインジウムシートを挟み込んでねじ止めする場合には、インジウムシートが高価であり、高周波用パッケージのコスト高となっている。また、インジウムシートのような介在物を組み立て段階で使用することは、シートの取り扱いが容易でなく、組み立て工程の時間が長くなり、高周波用パッケージのコスト高となっている。
（３）ヒートシンク板の長手方向の端部に突起を設け、基台にねじ止めする場合には、ヒートシンク板の長手方向の端部に突起を設ける程のエリアが殆どなく、ヒートシンク板を基台に密接させる効果を引き出すことができない。
本発明は、かかる事情に鑑みてなされたものであって、放熱特性や、電気的特性に優れた安価な高周波用パッケージの製造方法を提供することを目的とする。
【０００７】
【課題を解決するための手段】

【０００８】
前記目的に沿う本発明に係る高周波用パッケージの製造方法は、略長方形状の金属製のヒートシンク板の長手方向の両端部に基台にねじ止めするための切り欠き部を設け、ヒートシンクの一方の表面の長手方向の中央部にセラミック製のリング状枠体の一方の表面を接合し、リング状枠体の他方の表面に外部接続端子を接合して形成する高周波用パッケージの製造方法において、ヒートシンク板の一方の表面を平面形状の状態のままとし、ヒートシンク板の一方の表面にリング状枠体の一方の表面、及びリング状枠体の他方の表面に 外部接続端子をろう付け接合した後に、ヒートシンク板の他方の表面を研削して略長方形状の長手方向の中心線部を最大突出部とする曲面凸形状に形成する工程を有する。これにより、ヒートシンク板の他方の表面である底面になる側の曲面凸形状は、研削を行って作製しているので、容易に曲面凸形状を形成でき、放熱特性や、電気的特性のよい安価な高周波用パッケージを作製することができる。また、ヒートシンク板、リング状枠体、及び外部接続端子の接合で発生した反りを含んで研削できるので、曲面凸形状のバラツキを少なくでき、高歩留で安価な放熱特性や、電気的特性のよい高周波用パッケージの製造方法を提供することができる。
【０００９】

【００１０】
前記目的に沿う本発明に係る高周波用パッケージの他の製造方法は、略長方形状の金属製のヒートシンク板の長手方向の両端部に基台にねじ止めするための切り欠き部を設け、ヒートシンクの一方の表面の長手方向の中央部にセラミック製のリング状枠体の一方の表面を接合し、リング状枠体の他方の表面に外部接続端子を接合して形成する高周波用パッケージの製造方法において、ヒートシンク板の平面形状の一方の表面にリング状枠体の一方の表面、及びリング状枠体の他方の表面に外部接続端子をろう付け接合した後に、ヒートシンク板の一方の表面側からろう付け接合温度以下の温度で加熱しながら押圧して、ヒートシンク板の他方の表面を略長方形状の長手方向の中心線部を最大突出部とする曲面凸形状に形成する工程を有する。これにより、ヒートシンク板の他方の表面である底面になる側の曲面凸形状は、押圧を行って作製しているので、容易に曲面凸形状を形成でき、放熱特性や、電気的特性のよい安価な高周波用パッケージを作製することができる。また、ヒートシンク板、リング状枠体、及び外部接続端子のろう付け接合で発生した反りを含んで押圧できるので、曲面凸形状のバラツキを少なくでき、しかも、ろう付け接合温度以下の温度で加熱しながら押圧してリング状枠体の破壊の発生を防止しながら曲面凸形状に形成できるので、高歩留で安価な放熱特性や、電気的特性のよい高周波用パッケージを作製することができる。
【００１１】

【００１２】
【発明の実施の形態】
続いて、添付した図面を参照しつつ、本発明を具体化した実施の形態について説明し、本発明の理解に供する。
ここに、図１（Ａ）、（Ｂ）はそれぞれ本発明の一実施の形態に係る高周波用パッケージの製造方法で作製される高周波用パッケージの平面図、正面図、図２（Ａ）、（Ｂ）はそれぞれ同高周波用パッケージの製造方法で作製される高周波用パッケージに半導体素子が実装されて基台に取り付けられる説明図、図３（Ａ）〜（Ｃ）はそれぞれ同高周波用パッケージの製造方法の一部の説明図、図４（Ａ）、（Ｂ）はそれぞれ同高周波用パッケージの他の製造方法の一部の説明図である。
【００１３】
図１（Ａ）、（Ｂ）に示すように、本発明の一実施の形態に係る高周波用パッケージ１０の製造方法で作製される高周波用パッケージ１０は、実装される半導体素子から発生する高温、且つ大量の熱を放熱するための略長方形板状の高放熱特性を有し、セラミックと熱膨張係数が近似する金属板からなるヒートシンク板１１の一方の表面に、セラミック製のリング状枠体１２の一方の表面を、高温ろう材１３でろう付け接合して有している。また、高周波用パッケージ１０は、リング状枠体１２の他方の表面である上面に、半導体素子１９（図２（Ａ）参照）をキャビティ部１６に搭載して電気的に接続し、外部との電気的導通を行うための金属板からなるリードフレーム形状の外部接続端子１４を高温ろう材１３でろう付け接合して有している。更に、ヒートシンク板１１の長手方向の両端部には、基台２０（図２（Ｂ）参照）にねじ２１（図２（Ａ）、（Ｂ）参照）でねじ止めして取り付けるための切り欠き部１７を有している。そして、このヒートシンク板１１と、リング状枠体１２、及び外部接続端子１４とで、接合体１５を形成している。
【００１４】
この接合体１５からなる高周波用パッケージ１０の底面側であるヒートシンク板１１の他方の表面は、長手方向の両端部から中心線部にかけて表面側に突出し、中心線部で最大突出部となる曲面凸形状１８を有している。そして、この高周波用パッケージ１０は、図２（Ａ）、（Ｂ）に示すように、キャビティ部１６に半導体素子１９がダイボンドされ、半導体素子１９と外部接続端子１４とをボンディングワイヤ２２で接続された後、樹脂や、セラミックや、金属等からなる蓋体２３を樹脂や、ガラス等の接着材２４で接着してキャビティ部１６内が気密に封止されて、高周波用モジュール基板２５を形成している。この高周波用モジュール基板２５は、半導体素子１９からの発熱をヒートシンク板１１に放熱し、更に、外部に放熱させるための基台２０に、ヒートシンク板１１に設けられている切り欠き部１７にねじ２１を挿通させてねじ止めして固定される。このねじ止めを行った時に、高周波用パッケージ１０のヒートシンク板１１の他方の表面は、少なくとも、リング状枠体１２内に実装された半導体素子１９の実装エリア部に相当する部分が基台２０に密接することができる曲面凸形状１８を有している。
【００１５】
次いで、図３（Ａ）〜（Ｃ）を参照しながら、本発明の一実施の形態に係る高周波用パッケージ１０の製造方法を説明する。
高周波用パッケージ１０を形成するためのヒートシンク板１１は、熱膨張係数をセラミックの熱膨張係数と近似させ、熱伝導率の高い高放熱特性を有する、例えば、ポーラス状のタングステン（Ｗ）に銅（Ｃｕ）を含浸させたりして作製されるＣｕ−Ｗ系の複合金属材料や、Ｃｕとモリブデン（Ｍｏ）からなるＣｕ−Ｍｏ系の合金金属材料から形成されている。そして、切削加工や、粉末冶金等の手法を用いて基台２０にねじ止め固定するための切り欠き部１７を設けて、実質的に長方形状に形成されている。なお、因みに、ヒートシンク板１１がＣｕ−Ｗの場合は、Ｃｕ−Ｗの熱伝導率が２３０Ｗ／ｍ・ｋ程度であり、半導体素子１９からの発熱を効率よく放熱させることができる。
【００１６】
次に、図３（Ａ）に示すように、ヒートシンク板１１を研削する時には、ヒートシンク板１１の長手方向の下面側に両端部と中央部でそれぞれ硬度の違う、例えば、熱硬化性樹脂からなる樹脂体２６が張り付けるられている。この樹脂体２６は、ヒートシンク板１１の両端部側に硬度の高い高硬度樹脂を用い、中央部に硬度の低い抵硬度樹脂を用いて構成されている。そして、図３（Ｂ）に示すように、研削台上に樹脂体２６を介して載置されたヒートシンク板１１は、ダイヤモンド砥粒付きのグラインダー２７等で研削される。この研削によって、ヒートシンク板１１は、樹脂体２６の硬度の高い樹脂の部分では研削面と反対側の面側へのヒートシンク板１１の撓みによる逃げの発生が小さくなるので、研削量が多くなり、硬度の低い樹脂の部分ではヒートシンク板１１の撓みによる逃げの発生が大きくなるので、研削量が少なくなる。そして、図３（Ｃ）に示すように、ヒートシンク板１１は、研削時の撓みが解放されることで、結果的に、高周波用パッケージ１０の底面となる他方の表面の長手方向の中心線部を最大突出部とする曲面凸形状１８に形成される。そして、ヒートシンク板１１に付着している樹脂体２６は、剥離除去されて、他方の表面に曲面凸形状１８を有するヒートシンク板１１を作製している。
【００１７】
次いで、リング状枠体１２を形成するためのセラミックは、セラミックの一例であるＡｌ２Ｏ３からなり、Ａｌ２Ｏ３粉末にマグネシア、シリカ、カルシア等の焼結助剤を適当量加えた粉末に、ジオクチルフタレート等の可塑剤と、アクリル樹脂等のバインダー、及びトルエン、キシレン、アルコール類等の溶剤を加え、十分に混練し、脱泡して粘度２０００〜４００００ｃｐｓのスラリーを作製する。次いで、ドクターブレード法等によって、例えば、厚み０．２５ｍｍのロール状のシートを形成し、適当なサイズの矩形状に切断したセラミックグリーンシートを作製する。
【００１８】
次に、１又は複数枚のセラミックグリーンシートには、窓枠形状のリング状になるように中空部を打ち抜き加工すると共に、タングステンや、モリブデン等の高融点金属からなる金属導体ペーストを用いて、リング状枠体１２の下面側である一方の表面、及び上面側である他方の表面となるようにスクリーン印刷して金属導体パターンを形成する。また、セラミックグリーンシートが複数枚の場合には、積層して積層体の一方の表面、及び他方の表面が金属導体パターンとなるようにスクリーン印刷して形成する。そして、高融点金属とセラミックグリーンシートを還元雰囲気中で同時焼成して両表面に金属導体パターンを有するリング状枠体１２を作製する。なお、一方の表面の金属導体パターンは、ヒートシンク板１１とリング状の全周にわたってろう付け接合するためにリング状枠体１２の下面全周面に形成されている。また、因みに、Ａｌ２Ｏ３の熱膨張係数は、６．７×１０−６／ｋ程度であり、Ｃｕ−Ｗの熱膨張係数が、６．５×１０−６／ｋ程度であって、近似はしているが一致させることは難しい。
【００１９】
次いで、リング状枠体１２の上面である他方の表面に接合されるリードフレーム形状の金属板からなる外部接続端子１４は、ＫＶ（Ｆｅ−Ｎｉ−Ｃｏ系合金、商品名「Ｋｏｖａｒ（コバール）」）、４２アロイ（Ｆｅ−Ｎｉ系合金）等のセラミックと熱膨張係数が近似する金属部材からなり、切削加工や、エッチング加工や、打ち抜き加工等で所定の形状に形成されている。なお、因みに、ＫＶの熱膨張係数は、５．３×１０−６／ｋ程度であり、Ａｌ２Ｏ３の熱膨張係数の、６．７×１０−６／ｋ程度とは、互いに近似はしているが一致させることは難しい。
【００２０】
次いで、ヒートシンク板１１と、リング状枠体１２、及び外部接続端子１４を接合して形成する接合体１５の作製方法を説明する。先ず、ヒートシンク板１１の全表面、リング状枠体１２の両面の金属導体パターンの表面、及び外部接続端子１４の全表面には、それぞれＮｉや、Ｎｉ合金等からなる第１のＮｉめっきを施す。次に、ヒートシンク板１１の平面形状からなる一方の表面の中央部に、例えば、ＢＡｇ−８（Ａｇが７２％と、残部がＣｕからなる共晶合金）等のＡｇ−Ｃｕろうからなる高温ろう材１３を介してリング状枠体１２の下面側である一方の表面を当接させて載置し、約７８０〜９００℃で加熱してろう付け接合している。次に、リング状枠体１２の上面に、例えば、ＢＡｇ−８等のＡｇ−Ｃｕろうからなる高温ろう材１３を介して外部接続端子１４の先端部の下面側を当接させて載置し、約７８０〜９００℃で加熱してろう付け接合している。このヒートシンク板１１と、リング状枠体１２の接合、及びリング状枠体１２と外部接続端子１４の接合によって、接合体１５を形成している。なお、接合体１５の形成は、ヒートシンク板１１と、リング状枠体１２の接合、及びリング状枠体１２と外部接続端子１４の接合を同時に行って形成することもできる。次に、接合体１５の外表面に露出する全金属表面上には、第２のＮｉめっきが施され、更に、Ｎｉめっき上にＡｕめっきが施されることで、高周波用パッケージ１０を作製している。
【００２１】
ここで、ヒートシンク板１１の他方の表面が曲面凸形状１８からなる高周波用パッケージ１０の製造方法には、先ず、ヒートシンク板１１の両表面を平面形状のままの状態で一方の表面にリング状枠体１２の一方の表面を、及び、リング状枠体１２の上面の他方の表面に外部接続端子１４をろう付け接合して接合体１５を形成した後に、ヒートシンク板１１の他方の表面をダイヤモンド砥粒付きのグラインダー２７等で研削することで作製することができる。この研削は、前記の製造方法の場合と同様に、ヒートシンク板１１の一方の表面側に接合されたリング状枠体１２及び外部接続端子１４の面側の長手方向の両端部に硬度の高い樹脂、中央部に硬度の低い樹脂、例えば、それぞれ硬度の違う熱硬化性樹脂が張り付けられて行われている。そして、ヒートシンク板１１の他方の表面に長手方向の中心線部を最大突出部とする曲面凸形状１８を形成している。
【００２２】
次いで、図４（Ａ）、（Ｂ）を参照しながら、本発明の一実施の形態に係る高周波用パッケージ１０の他の製造方法を説明する。
接合体１５を形成するためのヒートシンク板１１、リング状枠体１２、及び外部接続端子１４は、前記の高周波用パッケージ１０の製造方法の場合と同様な材料が用いられている。ヒートシンク板１１に形成される曲面凸形状１８は、前記の製造方法では研削されて形成されているが、本発明の一実施の形態に係る高周波用パッケージ１０の他の製造方法では、ヒートシンク板１１の一方の表面から押圧して形成されている。図４（Ａ）に示すように、この押圧方法は、先ず、平板からなる平面台板２８上に載置された２本の支点棒２９にヒートシンク板１１をブリッジ状に載置させている。あるいは、ヒートシンク板１１の長手方向端部の稜辺が、円柱体の側部形状のようにして曲率半径を備えた溝状の凹部を有する曲面台板３０の凹部内で当接するようにして載置させている。次に、図４（Ｂ）に示すように、ヒートシンク板１１の長手方向の中心線部で上部から、断面視してＶ字や、Ｕ字形状等の刃先、又は、所望する曲面凸形状１８と実質的に同等の形状の上金型を有する押圧体３１で押圧して高周波用パッケージ１０の底面となるヒートシンク板１１の他方の表面に長手方向の中心線部を最大突出部とする曲面凸形状１８を形成している。この後の高周波用パッケージ１０の製造方法は、前記の製造方法と同様に、ヒートシンク板１１の一方の表面にリング状枠体１２の一方の表面をろう付け接合すると共に、リング状枠体１２の他方の表面に外部接続端子１４をろう付け接合して、高周波用パッケージ１０を作製している。
【００２３】
また、上記の押圧は、ヒートシンク板１１の一方の表面にリング状枠体１２の一方の表面、及び、リング状枠体１２の他方の表面に外部接続端子１４を接合した後に、ヒートシンク板１１の一方の表面側からろう付け接合した時の温度より以下の温度、すなわち約７８０℃未満の温度で加熱しながら押圧体３１で押圧するのがよい。この加熱によって、ヒートシンク板１１とリング状枠体１２、リング状枠体１２と外部接続端子１４のそれぞれの接合に用いられた高温ろう材１３が軟化された状態で押圧することができるので、セラミックからなるリング状枠体１２を破壊させることなく、ヒートシンク板１１の他方の表面に、ヒートシンク板１１の長手方向の中心線部を最大突出部とする曲面凸形状１８を形成することができる。なお、平面台板２８や、曲面台板３０は、ステンレス等の金属部材から形成され、曲面台板３０の凹部の曲率半径は、ヒートシンク板１１の大きさ、形状によって選択できるが、７００〜９００ｍｍ程度がよい。また、加熱温度は、接合体１５の大きさ、形状や、高温ろう材の種類によって選択できるが、２５０〜４００℃程度がよい。
【００２４】
【実施例】
本発明者は、Ｃｕ−Ｗからなり、外形寸法４０×１０ｍｍ、厚み１．６ｍｍの平板状のヒートシンク板の一方の表面を平面状態のままとし、ヒートシンク板の基台に密接させる面である他方の表面をヒートシンク板の長手方向の両端部から中心線部にかけて突出し中心線部で最大突出部となる曲面凸形状に切削して形成したヒートシンク板を準備した。また、Ａｌ２Ｏ３からなり、外形寸法３１×９．５ｍｍ、内形寸法２７．５×６ｍｍ、厚み０．２５ｍｍのリング状枠体、及び、ＫＶからなり、外形寸法１１．５×５ｍｍ、厚み０．１５ｍｍの４枚の外部接続端子を準備した。そして、ヒートシンク板の一方の表面とリング状枠体の一方の表面、及び、リング状枠体の他方の表面と外部接続端子をＢＡｇ−８からなるＡｇ−Ｃｕろうでろう付け接合して、実施例１の高周波用パッケージを作製した。
【００２５】
また、本発明者は、Ｃｕ−Ｗからなり、外形寸法４０×１０ｍｍ、厚み１．６ｍｍの平板状のヒートシンク板の他方の表面がヒートシンク板の長手方向の両端部から中心線部にかけて突出し中心線部で最大突出部となる曲面凸形状になるように、ヒートシンク板を曲率半径が８００ｍｍからなる曲面台板上に載置し、ヒートシンク板の一方の表面から押圧して形成したヒートシンク板を準備した。また実施例１の場合と同様に、Ａｌ２Ｏ３からなり、外形寸法３１×９．５ｍｍ、内形寸法２７．５×６ｍｍ、厚み０．２５ｍｍのリング状枠体、及び、ＫＶからなり、外形寸法１１．５×５ｍｍ、厚み０．１５ｍｍの４枚の外部接続端子を準備した。そして、ヒートシンク板の一方の表面とリング状枠体の一方の表面、及び、リング状枠体の他方の表面と外部接続端子をＢＡｇ−８からなるＡｇ−Ｃｕろうでろう付け接合して、実施例２の高周波用パッケージを作製した。
【００２６】
更に、本発明者は、比較例として、Ｃｕ−Ｗからなり、外形寸法４０×１０ｍｍ、厚み１．６ｍｍの平板状のヒートシンク板と、Ａｌ２Ｏ３からなり、外形寸法３１×９．５ｍｍ、内形寸法２７．５×６ｍｍ、厚み０．２５ｍｍのリング状枠体、及び、ＫＶからなり、外形寸法１１．５×５ｍｍ、厚み０．１５ｍｍの４枚の外部接続端子を準備した。そして、ヒートシンク板の一方の表面とリング状枠体の一方の表面、及び、リング状枠体の他方の表面と外部接続端子をＢＡｇ−８からなるＡｇ−Ｃｕろうでろう付け接合して、従来の高周波用パッケージを作製した。
【００２７】
実施例１、実施例２、及び比較例の各サンプル１０個について、ろう付け接合前と後のヒートシンク板の底面である他方の表面の反りの発生度合を測定した。測定結果を折れ線グラフにして表１に示す。なお、縦軸の矢印の範囲は、それぞれの反りの測定値のバラツキの範囲を示している。また、反りの値が＋（プラス）は、凸モードの反りであり、反りの値が−（マイナス）は、凹モードの反りである。
【００２８】
【表１】
【００２９】
実施例１、及び実施例２は、いずれも凸モードの反りを有し、基台との接合も問題なく密着して接合していることが確認でき、ヒートシンク板の他方の表面を曲面凸形状することが、確実に密着性を確保するのに有効であることが確認できた。これに反して、比較例は、凸モードと凹モードの反りが混在し、ろう付け接合後の反りの値のバラツキも大きくなっている。特に凹モードの反りを有するものは、基台との接合間に空洞が確認され、密着性に問題があることが確認できた。
【００３０】
【発明の効果】

【００３１】
請求項１記載の高周波用パッケージの製造方法は、ヒートシンク板の一方の表面を平面形状の状態のままとし、ヒートシンク板の一方の表面にリング状枠体の一方の表面、及びリング状枠体の他方の表面に外部接続端子をろう付け接合した後に、ヒートシンク板の他方の表面を研削して略長方形状の長手方向の中心線部を最大突出部とする曲面凸形状に形成する工程を有するので、ヒートシンク板の他方の表面である底面になる側の曲面凸形状は、研削を行って作製して容易に形成でき、放熱特性や、電気的特性のよい安価な高周波用パッケージを作製することができる。また、接合体に発生した反りを含んで研削でき、曲面凸形状のバラツキを少なくできて高歩留で安価な放熱特性や、電気的特性のよい高周波用パッケージの製造方法を提供することができる。
【００３２】

【００３３】
請求項２記載の高周波用パッケージの製造方法は、ヒートシンク板の平面形状の一方の表面にリング状枠体の一方の表面、及びリング状枠体の他方の表面に外部接続端子をろう付け接合した後に、ヒートシンク板の一方の表面側からろう付け接合温度以下の温度で加熱しながら押圧して、ヒートシンク板の他方の表面を略長方形状の長手方向の中心線部を最大突出部とする曲面凸形状に形成する工程を有するので、ヒートシンク板の他方の表面である底面になる側の曲面凸形状は、押圧を行って作製して容易に曲面凸形状が形成でき、放熱特性や、電気的特性のよい安価な高周波用パッケージを作製することができる。また、接合体に発生した反りを含んで押圧できて曲面凸形状のバラツキを少なくできる。更に、ろう付け接合温度以下の温度で加熱しながら押圧してリング状枠体の破壊の発生を防止しながら曲面凸形状に形成できて高歩留で安価な放熱特性や、電気的特性のよい高周波用パッケージを作製することができる。
【００３４】

【図面の簡単な説明】
【図１】 （Ａ）、（Ｂ）はそれぞれ本発明の一実施の形態に係る高周波用パッケージの製造方法で作製される高周波用パッケージの平面図、正面図である。
【図２】 （Ａ）、（Ｂ）はそれぞれ同高周波用パッケージの製造方法で作製される高周波用パッケージに半導体素子が実装されて基台に取り付けられる説明図である。
【図３】 （Ａ）〜（Ｃ）はそれぞれ同高周波用パッケージの製造方法の一部の説明図である。
【図４】 （Ａ）、（Ｂ）はそれぞれ同高周波用パッケージの他の製造方法の一部の説明図である。
【図５】 （Ａ）、（Ｂ）はそれぞれ従来の高周波用パッケージの説明図である。
【符号の説明】
１０：高周波用パッケージ、１１：ヒートシンク板、１２：リング状枠体、１３：高温ろう材、１４：外部接続端子、１５：接合体、１６：キャビティ部、１７：切り欠き部、１８：曲面凸形状、１９：半導体素子、２０：基台、２１：ねじ、２２：ボンディングワイヤ、２３：蓋体、２４：接着材、２５：高周波用モジュール基板、２６：樹脂体、２７：グラインダー、２８：平面台板、２９：支点棒、３０：曲面台板、３１：押圧体[0001]
[Technical field to which the invention belongs]
  The present invention provides a high-frequency package formed by joining a heat sink plate screwed to a base to dissipate heat generated from a semiconductor element and a ceramic ring-shaped frame.TheIt relates to a manufacturing method.
[0002]
[Prior art]
  Conventionally, high-frequency and high-power semiconductor elements such as silicon and gallium arsenide field-effect transistors are mounted on high-frequency packages, and are used for, for example, RF (Radio Frequency) base stations. Since high-frequency semiconductor elements generate a large amount of heat during operation, the device may not be able to operate normally unless the generated heat is dissipated well into the atmosphere. Therefore, the high-frequency package is a heat sink plate made of a metal plate having a high heat dissipation characteristic in a substantially rectangular shape so that the cavity portion for mounting the semiconductor element does not deteriorate the electrical characteristics in the high-frequency region of the semiconductor element. The semiconductor element mounting region formed above is joined and surrounded by a ceramic ring-shaped frame. In the high frequency package, after the semiconductor element is mounted, the cavity portion is hermetically sealed with a lid bonded to the upper surface of the insulator. The high-frequency signal is input / output via an external connection terminal joined between the upper surface of the insulator and the lid. The high-frequency package in which the semiconductor element is sealed is formed at both ends of the heat sink plate in a substantially rectangular longitudinal direction on a base for further radiating the heat radiated to the heat sink plate to the outside. A screw is attached to the notch and is fixed by screwing.
[0003]
  As shown in FIGS. 5A and 5B, the conventional high-frequency package 50 has a thermal expansion coefficient that is similar to that of ceramic and has good heat dissipation characteristics, for example, a copper tungsten (Cu—W) -based composite. A heat sink plate 51 made of a metal plate and alumina (Al2O3A ceramic ring-shaped frame 52 made of or the like is used. The high-frequency package 50 is placed on a metallized pattern having a ring-shaped frame 52 formed on the back side thereof at the center of the heat sink plate 51 via Ag—Cu brazing 53 and heated in a heating furnace. It is formed by brazing. In conjunction with this brazing, the ring-shaped frame 52 has an external connection terminal 54 made of a metal member for connection to the outside, and a metallized pattern formed on the surface side of the ring-shaped frame 52 with Ag—Cu brazing. 53, and is brazed and joined by heating in a heating furnace. Further, Ni plating and Au plating are applied to the metal surfaces of the heat sink plate 51, the ring-shaped frame 52 and the external connection terminal 54. At both ends of the heat sink plate 51 in the longitudinal direction, notches 57 for attaching to a base 55 for further dissipating the heat from the heat sink plate 51 to the outside and fixing with screws 56 are fixed. Is provided.
[0004]
  In a high frequency package, an indium sheet is sandwiched between a heat sink plate and a base and tightened with a screw for the purpose of improving heat dissipation characteristics and electrical characteristics between the heat sink plate and the base (for example, , Patent Document 1), and a method in which a protrusion is provided at the end of the heat sink plate in the longitudinal direction and tightened with screws (for example, see Patent Document 2).
[0005]
[Patent Document 1]
            JP 2001-230349 A
[Patent Document 2]
            Japanese Patent Laid-Open No. 4-237552
[0006]
[Problems to be solved by the invention]
  However, the conventional high frequency package as described above.TheThe manufacturing method has the following problems.
  (1) Although the thermal expansion coefficient of the heat sink plate and the external connection terminal is approximated to the thermal expansion coefficient of the ring-shaped frame, it is difficult to make it completely coincide with each other. When brazing and joining, stress is generated in the joint, and it is impossible to prevent warpage from occurring in the joined body formed by joining, and warpage exceeding the specified allowable range occurs, making it The high-frequency package is subjected to a screening inspection for warping, and only the allowable range is detected. In particular, when the shape of the warp of the bottom surface, which is the joint surface with the base of the heat sink plate, is a concave shape, a space is generated between the base and the base when it is attached to the base. Since the characteristics are degraded, only convex shapes must be detected. Therefore, the sorting step is required and at the same time the yield is lowered, and the cost of the high frequency package is high.
  (2) When the indium sheet is sandwiched between the heat sink plate and the base and screwed, the indium sheet is expensive, which increases the cost of the high frequency package. In addition, using an inclusion such as an indium sheet in the assembly stage makes it difficult to handle the sheet, lengthens the assembly process, and increases the cost of the high-frequency package.
  (3) When a projection is provided at the longitudinal end of the heat sink plate and screwed to the base, there is almost no area to provide a projection at the longitudinal end of the heat sink plate. It is not possible to bring out the effect of close contact.
  The present invention has been made in view of such circumstances, and is an inexpensive high-frequency package excellent in heat dissipation characteristics and electrical characteristics.TheAn object is to provide a manufacturing method.
[0007]
[Means for Solving the Problems]
  
[0008]
  The method for manufacturing a high-frequency package according to the present invention that meets the above-described object is a method for manufacturing a heat sink plate made of a substantially rectangular metal.Provide notches for screwing the base to both ends in the longitudinal direction.One surfaceThe longitudinal center ofIn the method for manufacturing a high-frequency package in which one surface of a ceramic ring-shaped frame is bonded to the other surface of the ring-shaped frame and the external connection terminal is bonded, Leave it in shape,One surface of the ring-shaped frame body on one surface of the heat sink plate, and the other surface of the ring-shaped frame body After brazing the external connection terminals,The other surface is ground to form a curved surface with a substantially rectangular central line in the longitudinal direction as the maximum protrusion.AboutHave. As a result, the curved convex shape on the side that becomes the bottom surface, which is the other surface of the heat sink plate, is manufactured by grinding, so that the curved convex shape can be easily formed, and the heat dissipation characteristics and electrical characteristics are good and inexpensive. A high-frequency package can be manufactured.In addition, since it can be ground including the warpage generated by joining the heat sink plate, ring-shaped frame, and external connection terminal, variation in the convex shape of the curved surface can be reduced, high yield and low cost heat dissipation characteristics, and electrical characteristics. A method for manufacturing a good high frequency package can be provided.
[0009]
  
[0010]
  Another method for manufacturing a high-frequency package according to the present invention that meets the above-described object is that of a substantially rectangular metal heat sink plate.Provide notches for screwing the base to both ends in the longitudinal direction.One surfaceThe longitudinal center ofIn the method of manufacturing a high frequency package, one surface of a ceramic ring-shaped frame body is bonded to the other surface of the ring-shaped frame body.After brazing and joining the external connection terminal to one surface of the ring-shaped frame body on one surface of the planar shape and the other surface of the ring-shaped frame body,One surface~ sideFromWhile heating at a temperature below the brazing joint temperaturePressHeat sink plateA process for forming the other surface into a convex shape with a substantially rectangular shape with the center line in the longitudinal direction as the maximum protrusion.AboutHave. Accordingly, the curved convex shape on the side that becomes the bottom surface, which is the other surface of the heat sink plate, is produced by pressing, so that the curved convex shape can be easily formed, and the heat radiation characteristics and electrical characteristics are good and inexpensive. A high-frequency package can be manufactured.In addition, since it can be pressed including the warp generated during brazing and joining of the heat sink plate, ring-shaped frame, and external connection terminal, variation in the curved convex shape can be reduced, and heating is performed at a temperature lower than the brazing joining temperature. Therefore, it can be formed into a curved convex shape while preventing the ring-shaped frame body from being broken, so that it is possible to produce a high-frequency package with high yield and low heat dissipation characteristics and good electrical characteristics.
[0011]
  
[0012]
DETAILED DESCRIPTION OF THE INVENTION
  Next, embodiments of the present invention will be described with reference to the accompanying drawings to provide an understanding of the present invention.
  Here, FIGS. 1A and 1B show the high frequency package according to the embodiment of the present invention.Of high-frequency packages manufactured by manufacturing methodsA plan view, a front view, and FIGS. 2A and 2B are the same high-frequency package.Package for high frequency produced by this manufacturing methodFIG. 3 (A) to FIG. 3 (C) are partial explanatory views of a method of manufacturing the same high-frequency package, and FIG. 4 (A) and FIG. It is explanatory drawing of a part of other manufacturing method of the package for high frequency each.
[0013]
  As shown in FIGS. 1A and 1B, a high frequency package 10 according to an embodiment of the present invention is shown.The high frequency package 10 manufactured by the manufacturing method ofIs one of the heat sink plates 11 having a high heat dissipation characteristic of a substantially rectangular plate shape for radiating a large amount of heat generated from a semiconductor element to be mounted, and made of a metal plate having a thermal expansion coefficient approximate to ceramic. One surface of the ring-shaped frame body 12 made of ceramic is brazed with a high-temperature brazing material 13 to the surface. In addition, the high frequency package 10 has a semiconductor element 19 (see FIG. 2A) mounted on the cavity portion 16 and electrically connected to the upper surface, which is the other surface of the ring-shaped frame 12, and connected to the outside. A lead frame-shaped external connection terminal 14 made of a metal plate for electrical conduction is brazed and joined with a high-temperature brazing material 13. Further, at both ends in the longitudinal direction of the heat sink plate 11, notches for screwing the base 20 (see FIG. 2B) with screws 21 (see FIGS. 2A and 2B) and attaching them. A portion 17 is provided. The heat sink plate 11, the ring frame 12, and the external connection terminals 14 form a joined body 15.
[0014]
  The other surface of the heat sink plate 11 which is the bottom surface side of the high-frequency package 10 composed of the joined body 15 projects to the surface side from both end portions in the longitudinal direction to the center line portion, and is a curved convexity that becomes the maximum projecting portion at the center line portion. It has a shape 18. As shown in FIGS. 2A and 2B, the high-frequency package 10 has a semiconductor element 19 die-bonded to the cavity 16 and the semiconductor element 19 and the external connection terminal 14 are connected by a bonding wire 22. After that, a lid 23 made of resin, ceramic, metal, or the like is bonded with an adhesive 24 such as resin or glass, and the cavity 16 is hermetically sealed to form a high-frequency module substrate 25. ing. The high-frequency module substrate 25 radiates heat generated from the semiconductor element 19 to the heat sink plate 11 and further to the base 20 for dissipating the heat to the outside, and a screw 21 on the notch portion 17 provided on the heat sink plate 11. Is fixed by screwing. When this screwing is performed, at least the other surface of the heat sink plate 11 of the high frequency package 10 corresponds to the mounting area of the semiconductor element 19 mounted in the ring frame 12 on the base 20. It has a curved convex shape 18 that can be in close contact.
[0015]
  Next, a method for manufacturing the high frequency package 10 according to the embodiment of the present invention will be described with reference to FIGS.
  The heat sink plate 11 for forming the high frequency package 10 has a thermal expansion coefficient approximate to that of ceramic and has a high heat dissipation characteristic with high thermal conductivity, for example, porous tungsten (W) with copper ( It is formed from a Cu—W composite metal material produced by impregnating Cu) or a Cu—Mo alloy metal material composed of Cu and molybdenum (Mo). And the notch part 17 for screwing and fixing to the base 20 is provided using methods, such as cutting and powder metallurgy, and it is formed in the substantially rectangular shape. Incidentally, when the heat sink plate 11 is Cu—W, the thermal conductivity of Cu—W is about 230 W / m · k, and the heat generated from the semiconductor element 19 can be efficiently dissipated.
[0016]
  Next, as shown in FIG. 3A, when the heat sink plate 11 is ground, the heat sink plate 11 is made of, for example, a thermosetting resin having different hardness at both ends and the central portion on the lower surface side in the longitudinal direction. A resin body 26 is attached. The resin body 26 is configured by using a high-hardness resin having a high hardness on both ends of the heat sink plate 11 and using a low-hardness resin having a low hardness at the center. As shown in FIG. 3B, the heat sink plate 11 placed on the grinding table via the resin body 26 is ground by a grinder 27 with diamond abrasive grains. Due to this grinding, the heat sink plate 11 is less likely to escape due to the bending of the heat sink plate 11 toward the surface opposite to the grinding surface in the resin portion 26 where the resin body 26 has a high hardness. In the resin portion having low hardness, the occurrence of escape due to the bending of the heat sink plate 11 becomes large, so the amount of grinding is reduced. And as shown in FIG.3 (C), the heat sink board 11 is the centerline part of the longitudinal direction of the other surface used as the bottom face of the package 10 for high frequency by releasing the bending | flexion at the time of grinding as a result. Is formed into a curved convex shape 18 with a maximum protrusion. And the resin body 26 adhering to the heat sink board 11 is peeled and removed, and the heat sink board 11 which has the curved-surface convex shape 18 on the other surface is produced.
[0017]
  Next, the ceramic for forming the ring-shaped frame 12 is Al which is an example of ceramic.2O3Made of Al2O3Add a suitable amount of sintering aids such as magnesia, silica, and calcia to the powder, and add a plasticizer such as dioctyl phthalate, a binder such as acrylic resin, and a solvent such as toluene, xylene, and alcohols. The slurry is kneaded and degassed to prepare a slurry having a viscosity of 2000 to 40000 cps. Next, for example, a roll-shaped sheet having a thickness of 0.25 mm is formed by a doctor blade method or the like, and a ceramic green sheet cut into a rectangular shape having an appropriate size is produced.
[0018]
  Next, in one or a plurality of ceramic green sheets, a hollow portion is punched into a ring shape in a window frame shape, and a metal conductor paste made of a refractory metal such as tungsten or molybdenum is used. A metal conductor pattern is formed by screen printing so that one surface on the lower surface side of the ring-shaped frame 12 and the other surface on the upper surface side are formed. When there are a plurality of ceramic green sheets, they are formed by screen printing so that one surface of the laminate and the other surface are metal conductor patterns. Then, a refractory metal and a ceramic green sheet are simultaneously fired in a reducing atmosphere to produce a ring-shaped frame 12 having metal conductor patterns on both surfaces. The metal conductor pattern on one surface is formed on the entire peripheral surface of the lower surface of the ring-shaped frame 12 so as to be brazed and joined to the heat sink plate 11 over the entire ring-shaped periphery. In addition, Al2O3The thermal expansion coefficient of 6.7 × 10-6/ K, and the thermal expansion coefficient of Cu-W is 6.5 × 10-6/ K, which is approximate but difficult to match.
[0019]
  Next, the external connection terminal 14 made of a lead-frame-shaped metal plate joined to the other surface, which is the upper surface of the ring-shaped frame body 12, is KV (Fe—Ni—Co alloy, trade name “Kovar”). ), 42 alloy (Fe—Ni alloy), etc., and a metal member having a similar thermal expansion coefficient, and is formed into a predetermined shape by cutting, etching, punching, or the like. Incidentally, the thermal expansion coefficient of KV is 5.3 × 10-6/ K, Al2O3Of the thermal expansion coefficient of 6.7 × 10-6Although it is approximated to / k, it is difficult to match.
[0020]
  Next, a manufacturing method of the joined body 15 formed by joining the heat sink plate 11, the ring-shaped frame body 12, and the external connection terminal 14 will be described. First, the first Ni plating made of Ni, Ni alloy, or the like is applied to the entire surface of the heat sink plate 11, the surfaces of the metal conductor patterns on both sides of the ring-shaped frame 12, and the entire surface of the external connection terminal 14. . Next, a high-temperature brazing made of an Ag—Cu brazing material such as BAg-8 (eutectic alloy consisting of 72% Ag and the balance Cu) is provided at the center of one surface of the heat sink plate 11 having a planar shape. One surface on the lower surface side of the ring-shaped frame 12 is placed in contact with the material 13 and heated at about 780 to 900 ° C. for brazing and joining. Next, on the upper surface of the ring-shaped frame body 12, the lower surface side of the distal end portion of the external connection terminal 14 is placed in contact with the high temperature brazing material 13 made of Ag—Cu brazing such as BAg-8. , Brazing and heating at about 780 to 900 ° C. A joined body 15 is formed by joining the heat sink plate 11 and the ring-shaped frame body 12 and joining the ring-shaped frame body 12 and the external connection terminal 14. The joined body 15 can also be formed by simultaneously joining the heat sink plate 11 and the ring-shaped frame body 12 and joining the ring-shaped frame body 12 and the external connection terminal 14 together. Next, a second Ni plating is applied on the entire metal surface exposed on the outer surface of the joined body 15, and further, an Au plating is applied on the Ni plating, thereby producing the high frequency package 10. ing.
[0021]
  Here, in the manufacturing method of the high frequency package 10 in which the other surface of the heat sink plate 11 is formed with the curved convex shape 18, first, a ring-shaped frame is formed on one surface while both surfaces of the heat sink plate 11 remain in a planar shape. After forming the joined body 15 by brazing the external connection terminal 14 to one surface of the body 12 and the other surface of the upper surface of the ring-shaped frame 12, the other surface of the heat sink plate 11 is diamond-ground. Grinding with grained grinder 27 etc.Can be made withit can. As in the case of the above manufacturing method, this grinding is a resin having high hardness at both ends in the longitudinal direction on the surface side of the ring-shaped frame 12 and the external connection terminals 14 joined to one surface side of the heat sink plate 11. A resin having a low hardness, for example, a thermosetting resin having a different hardness is attached to the central portion. A curved convex shape 18 is formed on the other surface of the heat sink plate 11 with the center line portion in the longitudinal direction as the maximum protruding portion.
[0022]
  Next, another method for manufacturing the high-frequency package 10 according to one embodiment of the present invention will be described with reference to FIGS.
  The heat sink plate 11, the ring-shaped frame body 12, and the external connection terminals 14 for forming the joined body 15 are made of the same materials as those in the method for manufacturing the high-frequency package 10. The curved convex shape 18 formed on the heat sink plate 11 is formed by grinding in the above manufacturing method, but in another manufacturing method of the high frequency package 10 according to the embodiment of the present invention, the heat sink plate 11 is formed. It is formed by pressing from one surface. As shown in FIG. 4A, in this pressing method, first, the heat sink plate 11 is placed in a bridge shape on two fulcrum rods 29 placed on a flat base plate 28 made of a flat plate. Alternatively, the heat sink plate 11 is mounted so that the edge of the end portion in the longitudinal direction of the heat sink plate 11 comes into contact with the concave portion of the curved base plate 30 having a groove-like concave portion having a radius of curvature like the side shape of a cylindrical body. It is put. Next, as shown in FIG. 4 (B), a cutting edge having a V shape, U shape or the like, or a desired curved convex shape 18 when viewed in cross section from the top at the longitudinal center line portion of the heat sink plate 11. A curved convex surface having a center line in the longitudinal direction as a maximum protrusion on the other surface of the heat sink plate 11 which is pressed by a pressing body 31 having an upper mold substantially equivalent to the shape of the heat sink plate 10. A shape 18 is formed. In the subsequent manufacturing method of the high frequency package 10, one surface of the ring-shaped frame body 12 is brazed and joined to one surface of the heat sink plate 11, as in the above-described manufacturing method. The external connection terminal 14 is brazed and joined to the other surface to produce the high frequency package 10.
[0023]
  Further, the above-described pressing is performed by joining the external connection terminal 14 to one surface of the ring-shaped frame body 12 on one surface of the heat-sink plate 11 and the other surface of the ring-shaped frame body 12. It is preferable to press with the pressing body 31 while heating at a temperature below the temperature when brazed from one surface side, that is, a temperature lower than about 780 ° C. By this heating, the high-temperature brazing material 13 used for joining the heat sink plate 11 and the ring-shaped frame body 12 and the ring-shaped frame body 12 and the external connection terminal 14 can be pressed in a softened state. Without destroying the ring-shaped frame body 12, the curved convex shape 18 having the maximum protruding portion at the center line portion in the longitudinal direction of the heat sink plate 11 can be formed on the other surface of the heat sink plate 11. The flat base plate 28 and the curved base plate 30 are made of a metal member such as stainless steel, and the radius of curvature of the concave portion of the curved base plate 30 can be selected depending on the size and shape of the heat sink plate 11, but 700 to 900 mm. The degree is good. The heating temperature can be selected depending on the size and shape of the joined body 15 and the type of the high-temperature brazing material, but is preferably about 250 to 400 ° C.
[0024]
【Example】
  The inventor of the present invention is made of Cu-W, and the other surface, which is a surface that keeps one surface of a flat heat sink plate having an outer dimension of 40 × 10 mm and a thickness of 1.6 mm in a flat state and is in close contact with the base of the heat sink plate A heat sink plate was prepared by cutting the surface of the heat sink plate into a curved convex shape that protrudes from both longitudinal ends of the heat sink plate to the center line portion and becomes the maximum protrusion at the center line portion. Al2O3A ring-shaped frame having an outer dimension of 31 × 9.5 mm, an inner dimension of 27.5 × 6 mm, and a thickness of 0.25 mm, and KV, and 4 of an outer dimension of 11.5 × 5 mm and a thickness of 0.15 mm. Two external connection terminals were prepared. Then, one surface of the heat sink plate and one surface of the ring-shaped frame body, and the other surface of the ring-shaped frame body and the external connection terminal are brazed and joined with Ag-Cu brazing made of BAg-8. The high frequency package of Example 1 was produced.
[0025]
  Further, the inventor of the present invention is made of Cu-W, and the other surface of the flat heat sink plate having an outer dimension of 40 × 10 mm and a thickness of 1.6 mm protrudes from both ends in the longitudinal direction of the heat sink plate to the center line portion. A heat sink plate was prepared by placing the heat sink plate on a curved base plate having a radius of curvature of 800 mm and pressing from one surface of the heat sink plate so as to have a curved convex shape that is the maximum protrusion at the portion. . Further, as in the case of Example 1, Al2O3A ring-shaped frame having an outer dimension of 31 × 9.5 mm, an inner dimension of 27.5 × 6 mm, and a thickness of 0.25 mm, and KV, and 4 of an outer dimension of 11.5 × 5 mm and a thickness of 0.15 mm. Two external connection terminals were prepared. Then, one surface of the heat sink plate and one surface of the ring-shaped frame body, and the other surface of the ring-shaped frame body and the external connection terminal are brazed and joined with Ag-Cu brazing made of BAg-8. The high frequency package of Example 2 was produced.
[0026]
  Furthermore, as a comparative example, the inventor made of Cu-W, a flat heat sink plate having an outer dimension of 40 × 10 mm and a thickness of 1.6 mm, and Al2O3A ring-shaped frame having an outer dimension of 31 × 9.5 mm, an inner dimension of 27.5 × 6 mm, and a thickness of 0.25 mm, and KV, and 4 of an outer dimension of 11.5 × 5 mm and a thickness of 0.15 mm. Two external connection terminals were prepared. Then, one surface of the heat sink plate and one surface of the ring-shaped frame body, and the other surface of the ring-shaped frame body and the external connection terminal are brazed and joined with Ag-Cu brazing made of BAg-8. A high frequency package was prepared.
[0027]
  About each sample of Example 1, Example 2, and a comparative example, the generation | occurrence | production degree of curvature of the other surface which is the bottom face of the heat sink board before brazing joining and after was measured. The measurement results are shown as a line graph in Table 1. In addition, the range of the arrow on the vertical axis indicates the range of variation in the measured values of each warp. A warp value of + (plus) is a convex mode warp, and a warp value of-(minus) is a concave mode warp.
[0028]
[Table 1]
[0029]
  Example 1 and Example 2 both have a warp in the convex mode, and it can be confirmed that the junction with the base is closely adhered and joined without any problem, and the other surface of the heat sink plate has a curved convex shape. It was confirmed that it was effective to ensure adhesion. On the other hand, in the comparative example, the warp in the convex mode and the concave mode is mixed, and the variation in the value of the warp after brazing is large. In particular, in the case of the concave mode warpage, a cavity was confirmed between the joint and the base, and it was confirmed that there was a problem in adhesion.
[0030]
【The invention's effect】
  
[0031]
  Claim1The manufacturing method of the described package for high frequency, the one surface of the heat sink plate is left in a planar shape state,After brazing and joining the external connection terminal to one surface of the ring-shaped frame body on one surface of the heat sink plate and the other surface of the ring-shaped frame body,The other surface is ground to form a curved surface with a substantially rectangular central line in the longitudinal direction as the maximum protrusion.AboutTherefore, the curved convex shape on the bottom surface, which is the other surface of the heat sink plate, can be easily formed by grinding, and an inexpensive high-frequency package with good heat dissipation characteristics and electrical characteristics is manufactured. be able to.In addition, it is possible to provide a method for manufacturing a high-frequency package that can be ground including warpage generated in the joined body, can reduce variations in the convex shape of the curved surface, has high yield, is inexpensive, and has good electrical characteristics. .
[0032]
  
[0033]
  Claim2The manufacturing method of the described high frequency packageAfter brazing and joining the external connection terminal to one surface of the ring-shaped frame body on one surface of the planar shape and the other surface of the ring-shaped frame body,One surface~ sideFromWhile heating at a temperature below the brazing joint temperaturePressHeat sink plateA process for forming the other surface into a convex shape with a substantially rectangular shape with the center line in the longitudinal direction as the maximum protrusion.AboutTherefore, the curved convex shape on the side that becomes the bottom surface, which is the other surface of the heat sink plate, can be formed by pressing to easily form the curved convex shape, and it can be easily formed into a curved convex shape for heat radiation and low-cost high-frequency electric characteristics. A package can be produced.Moreover, it can press including the curvature generate | occur | produced in the conjugate | zygote and can reduce the variation of a curved-surface convex shape. Furthermore, it can be formed into a curved convex shape while preventing it from being broken by pressing it while heating at a temperature equal to or lower than the brazing joint temperature, and it has good yield and low heat dissipation characteristics and electrical characteristics. A high frequency package can be manufactured.
[0034]
  
[Brief description of the drawings]
FIGS. 1A and 1B are diagrams of a high-frequency package according to an embodiment of the present invention, respectively.Of high-frequency packages manufactured by manufacturing methodsIt is a top view and a front view.
FIG. 2 (A) and (B) are the same high frequency packages.Package for high frequency produced by this manufacturing methodFIG. 6 is an explanatory diagram in which a semiconductor element is mounted on and attached to a base.
FIGS. 3A to 3C are explanatory views of a part of the method for manufacturing the same high-frequency package. FIGS.
FIGS. 4A and 4B are explanatory views of a part of another manufacturing method of the high-frequency package.
FIGS. 5A and 5B are explanatory diagrams of a conventional high-frequency package, respectively.
[Explanation of symbols]
  10: high frequency package, 11: heat sink plate, 12: ring-shaped frame, 13: high-temperature brazing material, 14: external connection terminal, 15: joined body, 16: cavity portion, 17: notch, 18: convex surface Shape: 19: Semiconductor element, 20: Base, 21: Screw, 22: Bonding wire, 23: Lid, 24: Adhesive, 25: Module substrate for high frequency, 26: Resin body, 27: Grinder, 28: Plane Base plate, 29: fulcrum bar, 30: curved base plate, 31: pressing body

Claims (2)

略長方形状の金属製のヒートシンク板の長手方向の両端部に基台にねじ止めするための切り欠き部を設け、前記ヒートシンクの一方の表面の前記長手方向の中央部にセラミック製のリング状枠体の一方の表面を接合し、該リング状枠体の他方の表面に外部接続端子を接合して形成する高周波用パッケージの製造方法において、
前記ヒートシンク板の一方の表面を平面形状の状態のままとし、前記ヒートシンク板の一方の表面に前記リング状枠体の一方の表面、及び該リング状枠体の他方の表面に前記外部接続端子をろう付け接合した後に、前記ヒートシンク板の他方の表面を研削して前記略長方形状の長手方向の中心線部を最大突出部とする曲面凸形状に形成する工程を有することを特徴とする高周波用パッケージの製造方法。A notch for screwing to the base is provided at both longitudinal ends of a substantially rectangular metal heat sink plate, and a ceramic ring-shaped frame is provided at the longitudinal center of one surface of the heat sink. In a method for manufacturing a high-frequency package formed by bonding one surface of a body and bonding an external connection terminal to the other surface of the ring-shaped frame,
One surface of the heat sink plate is left in a planar shape, the one surface of the ring-shaped frame body on one surface of the heat sink plate, and the external connection terminal on the other surface of the ring-shaped frame body after brazing, characterized in that it has a more engineering of forming a curved convex shape to maximize protrusion center line of the longitudinal direction by grinding the other surface of the substantially rectangular shape of the heat sink plate RF Package manufacturing method. 略長方形状の金属製のヒートシンク板の長手方向の両端部に基台にねじ止めするための切り欠き部を設け、前記ヒートシンクの一方の表面の前記長手方向の中央部にセラミック製のリング状枠体の一方の表面を接合し、該リング状枠体の他方の表面に外部接続端子を接合して形成する高周波用パッケージの製造方法において、
前記ヒートシンク板の平面形状の一方の表面に前記リング状枠体の一方の表面、及び該リング状枠体の他方の表面に前記外部接続端子をろう付け接合した後に、前記ヒートシンク板の一方の表面側から前記ろう付け接合温度以下の温度で加熱しながら押圧して、前記ヒートシンク板の他方の表面を前記略長方形状の長手方向の中心線部を最大突出部とする曲面凸形状に形成する工程を有することを特徴とする高周波用パッケージの製造方法。A notch for screwing to the base is provided at both longitudinal ends of a substantially rectangular metal heat sink plate, and a ceramic ring-shaped frame is provided at the longitudinal center of one surface of the heat sink. In a method for manufacturing a high-frequency package formed by bonding one surface of a body and bonding an external connection terminal to the other surface of the ring-shaped frame,
One surface of the ring-shaped frame body on one surface of the planar shape of the heat sink plate , and one surface of the heat sink plate after brazing the external connection terminal to the other surface of the ring-shaped frame body A process of forming the other surface of the heat sink plate into a curved convex shape with the center line portion in the longitudinal direction of the substantially rectangular shape as a maximum projecting portion by pressing while heating at a temperature equal to or lower than the brazing joining temperature from the side. A method for manufacturing a high-frequency package, comprising:
JP2003163429A 2003-06-09 2003-06-09 Manufacturing method of high frequency package Expired - Lifetime JP3838570B2 (en)

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