JP2008159975A - Package for housing semiconductor element, and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a package for housing a semiconductor element and a method of manufacturing the same, having superior heat radiation performance and electrical characteristics and proper dimensional accuracy, at a low cost. <P>SOLUTION: A package 10 for housing a semiconductor element consists of: an approximate rectangular shaped heat sink 11 made of a metallic plate having a high heat radiation performance; a window flame shaped insulating frame body 12 made of ceramics in the center part in a longitudinal direction of one main surface of the heat sink 11; and a junction structure 15 to which an external connection terminal 14 made of a metallic plate on an upper side of the insulating frame body 12 are jointed. In the package 10, a grinding surface 18 is provided over the whole surface of the other main surface of the heat sink 11 of the junction structure 15. The position of the grinding surface 18 intersects notch surfaces 19 and 19a, consisting of a C side and an R side preliminarily provided at both ridges of at least short-length direction of the other main surface of the heat sink 11. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention is a semiconductor element housing in which a semiconductor element is housed and formed by joining a heat sink plate to be bonded to a base or a ceramic insulating frame to dissipate heat generated from the semiconductor element. The present invention relates to a package and a manufacturing method thereof.

  Conventionally, high-frequency, high-power semiconductor elements such as silicon and gallium arsenide field effect transistors are mounted on a semiconductor element storage package, for example, to form a module for an RF (Radio Frequency) base station or the like. Some are used. Since high-frequency semiconductor elements generate a large amount of heat during operation, the device may not be able to operate normally unless the generated heat is dissipated well into the atmosphere. Therefore, a package for housing a semiconductor element for mounting a semiconductor element for high frequency has a substantially rectangular shape so that the cavity for mounting the semiconductor element does not deteriorate the electrical characteristics in the high frequency region of the semiconductor element. The semiconductor element mounting region formed on the heat sink plate made of a metal plate having a high heat dissipation characteristic is joined and surrounded by an insulating frame body having a ceramic window frame shape. In this semiconductor element storage package, the semiconductor element is mounted in the cavity portion, mounted in a conductive state with an external connection terminal by a bonding wire or the like, and then the cavity portion is bonded to the upper surface of the insulator. Is hermetically sealed. The high-frequency signal is input / output via an external connection terminal joined between the upper surface of the insulator and the lid. The semiconductor element storage package in which the semiconductor elements are sealed is formed on both ends of the substantially rectangular shape of the heat sink plate on the base for further radiating the heat radiated to the heat sink plate to the outside. A screw is attached to the screw mounting portion, and is fixed by screwing.

As shown in FIGS. 5A and 5B, the conventional semiconductor element housing package 50 for housing a high-frequency semiconductor element has a thermal expansion coefficient approximate to that of ceramic, and has good heat dissipation characteristics. For example, a heat sink plate 51 having a substantially rectangular shape of a copper tungsten (Cu—W) based composite metal plate and an insulating frame 52 having a ceramic window frame shape made of alumina (Al ₂ O ₃ ) or the like are used. ing. The semiconductor element storage package 50 is placed on the metallized pattern having the insulating frame 52 formed on the back side thereof at the center in the longitudinal direction of the heat sink plate 51 via the Ag-Cu brazing 53, and the heating furnace It is heated and brazed and joined. In conjunction with this brazing and joining, an external connection terminal 54 made of a metal member for connecting to the outside is provided on the insulating frame 52 with Ag—Cu brazing 53 formed on the metallized pattern formed on the surface side of the insulating frame 52. And is brazed and joined by heating in a heating furnace. Further, Ni plating and Au plating are applied to the metal surfaces of the heat sink plate 51, the insulating frame 52, and the external connection terminal 54. At both ends in the longitudinal direction of the heat sink plate 51, screw mounting portions 57 are attached to a base 55 for further dissipating the heat from the heat sink plate 51 to the outside and fixed with screws 56. Is provided.

A conventional package for storing semiconductor elements for storing high-frequency semiconductor elements is provided between the heat sink plate and the base for the purpose of improving heat dissipation characteristics and electrical characteristics between the heat sink plate and the base. In other words, an indium sheet is sandwiched and tightened with a screw (for example, see Patent Document 1).
Further, a semiconductor element housing package for housing a high-frequency semiconductor element is disclosed in which a protrusion is provided at the longitudinal end of a heat sink plate and tightened with a screw (for example, Patent Document 2). reference).
Furthermore, in a package for housing semiconductor elements for housing high-frequency semiconductor elements, the lower surface of the heat sink plate after joining the insulating frame and the external connection terminal to the heat sink plate is formed into a curved convex shape. Forming by grinding or pressing is disclosed (for example, see Patent Document 3).

Japanese Patent No. 3619734 Japanese Patent Laid-Open No. 4-237552 JP 2004-363520 A

However, the conventional semiconductor element storage package and the manufacturing method thereof as described above have the following problems.
(1) Although the thermal expansion coefficient of the heat sink plate and the external connection terminal is approximated to the thermal expansion coefficient of the insulating frame, it is difficult to completely match it. When brazing and joining, stress is generated in the joint, and it is impossible to prevent warpage from occurring in the joined body formed by joining, and warpage exceeding the specified allowable range occurs and is produced. In addition, the inspection of the warpage of the package for housing the semiconductor element is performed to detect only the allowable range. In particular, when the shape of the warp of the bottom surface, which is the joint surface with the base of the heat sink plate, is a concave shape, a space is generated between the base and the base when it is attached to the base. Since the characteristics deteriorate, it is necessary to detect only a flat or slightly convex shape as much as possible. Therefore, the sorting step is required and at the same time the yield is lowered, and the cost of the package for housing semiconductor elements is increased. In addition, even if the bottom surface of the heat sink plate is generally flat or convex, it is impossible to eliminate small undulations on the surface, so there is a limit to the adhesion with the base, and the heat transfer efficiency is reduced. Heat dissipation characteristics and electrical characteristics will be degraded.
(2) A package for housing a semiconductor element as disclosed in Japanese Patent No. 3619734 is expensive because an indium sheet is expensive to insert and screw an indium sheet between a heat sink plate and a base. The cost of the package is high. Further, using an inclusion such as an indium sheet in the assembly stage makes it difficult to handle the sheet, lengthens the assembly process, and increases the cost of the package for housing a semiconductor element.
(3) A package for housing a semiconductor element as disclosed in Japanese Patent Application Laid-Open No. Hei 4-233752 is provided with a protrusion on the end of the heat sink plate in the longitudinal direction and the end of the heat sink plate in the longitudinal direction when screwed to the base. There is almost no area to the extent that the projection is provided on the part, and the effect of bringing the heat sink plate into close contact with the base cannot be brought out.
(4) When the lower surface of the heat sink plate is protruded downward or flatly ground by the manufacturing method of a package for housing a semiconductor element as disclosed in Japanese Patent Application Laid-Open No. 2004-363520, the burr is formed from the end surface. It is generated by popping out and becomes larger than a predetermined size, and the cost of the semiconductor element storage package is increased due to the decrease in yield and the occurrence of reworking work. In particular, when the heat sink plate is a metal plate containing Cu in order to give the heat sink plate high heat dissipation properties, the malleability of the metal plate is high and burrs are likely to occur in the grinding direction during grinding. Yes.
The present invention has been made in view of such circumstances, and an object of the present invention is to provide an inexpensive package for housing a semiconductor element that is excellent in heat dissipation characteristics and electrical characteristics and has high dimensional accuracy, and a method for manufacturing the same.

  A package for housing a semiconductor element according to the present invention that meets the above-mentioned object is a substantially rectangular heat sink plate made of a metal plate having high heat dissipation characteristics, and a window made of ceramic at the center in the longitudinal direction of one main surface of the heat sink plate. In a semiconductor element storage package comprising a frame-shaped insulating frame and a bonded body in which an external connection terminal made of a metal plate is bonded to the upper surface of the insulating frame, the entire surface of the other main surface of the heat sink plate of the bonded body is ground. And a grinding surface is provided so as to intersect with a notch surface formed of a C surface or an R surface provided in advance on at least both lateral ridges of the other main surface of the heat sink plate.

  The method for manufacturing a package for housing a semiconductor device according to the present invention in accordance with the above object includes a substantially rectangular heat sink plate made of a metal plate having high heat dissipation characteristics, and a ceramic at the longitudinal center of one main surface of the heat sink plate. In a manufacturing method of a package for housing a semiconductor element in which a window frame-shaped insulating frame body and an external connection terminal made of a metal plate are bonded to the upper surface of the insulating frame body to form a bonded body, before forming the bonded body A process of chamfering a cut surface formed of a C surface or an R surface on at least both lateral ridges of the other main surface of the heat sink plate, and after forming the joined body, the other main surface of the heat sink plate Is reciprocated along the longitudinal direction to make the grinding depth smaller than the size of the cut-out surface consisting of the C-plane or R-plane, and the ground surface is formed on the entire other main surface of the heat sink plate. Comprising the step of.

  The semiconductor element storage package according to claim 1 is a substantially rectangular heat sink plate made of a metal plate having a high heat dissipation characteristic, and a window frame shape made of ceramic at the center in the longitudinal direction of one main surface of the heat sink plate. An insulating frame and a grounding surface on the entire surface of the other main surface of the heat sink plate of the joined body in which an external connection terminal made of a metal plate is joined to the upper surface of the insulating frame, and the position of the grinding surface is the other side of the heat sink plate The other side of the heat sink plate having warpage and undulation when forming a joined body because it has a notch surface formed of a C surface or an R surface provided in advance at least on both ridges in the short direction of the main surface. The main surface has a ground surface, has high flatness, excellent adhesion to the base, and can be provided as an inexpensive package excellent in heat dissipation characteristics and electrical characteristics. In addition, since the heat sink plate has a grinding surface at least on the C-attached surface at both ridges in the short-side direction, or on the oblique state portion of the ridge portion by the R-attached surface, the notch surface consisting of the C surface or the R surface It is possible to provide a package for housing a semiconductor element that prevents generation of burrs. Further, the heat sink plate has a cut-out surface made of the C surface or the R surface so that the outer dimension of the grinding surface in the longitudinal direction is smaller than the outer dimension between the end surfaces, for example, even if burrs are generated, Since it fits in the oblique state portion viewed from the cross section of the cut-out surface made of the R surface, a semiconductor element housing package having excellent dimensional accuracy can be provided without exceeding the outer dimension between the end surfaces.

  A manufacturing method of a package for housing a semiconductor element according to claim 2, wherein a heat sink plate having a substantially rectangular shape made of a metal plate having a high heat dissipation characteristic, and a window made of ceramic at a central portion in the longitudinal direction of one main surface of the heat sink plate. Before forming a joined body by joining a frame-shaped insulating frame and an external connection terminal made of a metal plate to the upper surface of the insulating frame, C is formed at both ridges on the other main surface of the heat sink plate. A chamfering process is performed on the cut surface of the surface or the R surface, and after forming the joined body, the other main surface of the heat sink plate is reciprocally ground along the longitudinal direction to obtain a grinding depth of C And a step of forming a ground surface on the entire surface of the other main surface of the heat sink plate, so that the heat of the ceramic and the metal plate when forming the joined body is included. Expansion coefficient By providing a fully ground surface on the other main surface after forming the joined body, the surface of the heat sink plate having higher flatness and excellent adhesion to the base due to warpage and undulation generated from the difference Therefore, it is possible to provide an inexpensive method for manufacturing a package for housing a semiconductor element, which has excellent heat dissipation characteristics and electrical characteristics. In addition, the heat sink plate is subjected to grinding by reciprocally grinding toward the oblique state portion in a cross-sectional view of the ridge portion by the cut surface formed by the C surface or the R surface at both ridge portions in the short direction. It is possible to provide a method for manufacturing a package for housing a semiconductor element that prevents generation. Furthermore, even if burrs are generated by performing grinding, for example, the external dimensions of the grinding surface in the longitudinal direction are smaller than the external dimensions between the end faces due to the cut surface formed by the C surface or the R surface. The cross-sectional view of the cut-out surface consisting of the C-plane or R-plane fits in the oblique state part, has excellent dimensional accuracy without exceeding the outer dimension between the end faces, has high yield and low cost heat dissipation characteristics, and electrical characteristics A method for manufacturing a good package for housing semiconductor elements can be provided.

Next, embodiments of the present invention will be described with reference to the accompanying drawings to provide an understanding of the present invention.
1A and 1B are a plan view, a longitudinal sectional view taken along line AA ′, and FIGS. 2A and 2B, respectively, of a package for housing a semiconductor element according to an embodiment of the present invention. Is an explanatory view of both ridges in the short direction of the heat sink plate of the semiconductor element storage package, and FIGS. 3A and 3B are mounted on the base with the semiconductor element mounted on the semiconductor element storage package, respectively. FIGS. 4A to 4D are explanatory views of the method for manufacturing the semiconductor element storage package.

  As shown in FIGS. 1A and 1B, a semiconductor element housing package 10 according to an embodiment of the present invention is a high-frequency, high-power semiconductor such as silicon or gallium arsenide field-effect transistor to be mounted. The heat sink plate 11 has a high heat dissipation characteristic for dissipating a high temperature and a large amount of heat generated from the element, and is made of a substantially rectangular metal plate whose thermal expansion coefficient is approximated as much as possible. The semiconductor element storage package 10 has a heat sink plate 11 on one main surface with the back side of an insulating frame 12 made of a ceramic window frame shape brazed with a high temperature brazing material 13. Yes. Further, the semiconductor element storage package 10 is brazed with a high-temperature brazing material 13 on the surface side of the insulating frame 12 with a lead frame-shaped external connection terminal 14 made of a metal plate for electrical connection with the outside. It has joined. The semiconductor element storage package 10 is formed as a joined body 15 of the heat sink plate 11, the insulating frame body 12, and the external connection terminal 14. In the semiconductor element storage package 10 formed of the joined body 15, one main surface of the heat sink plate 11 is used as a mounting surface of the semiconductor element 20 (see FIG. 3A), and the inner peripheral side wall surface of the insulating frame 12 is used. A cavity portion 16 for accommodating the semiconductor element 20 serving as the surrounding surface of the semiconductor element 20 is formed. Further, in the semiconductor element storage package 10, screws 26 (see FIGS. 3A and 3B) are screwed onto the base 25 (see FIG. 3B) at both ends of the heat sink plate 11 in the longitudinal direction. It has a screw mounting portion 17 for stopping and mounting.

  The package 10 for housing a semiconductor element has a ground surface 18 that is ground over the entire surface of the other main surface on the bottom surface side of the heat sink plate 11 of the joined body 15 and the entire surface is flat. Here, as shown in FIG. 2 (A), the heat sink plate 11 has at least both ends of the other major surface on the bottom surface side in the longitudinal direction in advance before the grinding surface 18 is formed. It has the notch surface 19 which consists of C surface provided in the both ridges of a short direction. The package 10 for housing a semiconductor element is ground so that the relationship between the grinding surface 18 and the dimension a of the C surface and the grinding depth b satisfies a> b> 0. Have to cross. Alternatively, as shown in FIG. 2 (B), the heat sink plate 11 has at least substantially rectangular longitudinal ends of the other main surface on the bottom surface side in advance before the grinding surface 18 is formed. It has a notch surface 19a made of an R surface provided at both ridges in the short direction. The package 10 for housing a semiconductor element is ground so that the relationship between the dimension a of the R surface and the grinding depth b is a> b> 0, and the cut surface 19a Have to cross.

  As shown in FIGS. 3A and 3B, in the semiconductor element housing package 10, the semiconductor element 20 is die-bonded to the cavity portion 16, and the semiconductor element 20 and the external connection terminal 14 are connected by the bonding wire 21. After that, the lid body 22 made of resin, ceramic, metal or the like is bonded with an adhesive 23 such as resin or glass, and the cavity portion 16 is hermetically sealed to form the high-frequency module substrate 24. is doing. The high-frequency module substrate 24 radiates heat generated from the semiconductor element 20 to the heat sink plate 11, and further to the base 25 for radiating the heat to the outside, and screws 26 to screw mounting portions 17 provided on the heat sink plate 11. Is fixed by screwing.

Next, a method for manufacturing the semiconductor element housing package 10 according to the embodiment of the present invention will be described with reference to FIGS. 4 (A) to 4 (D), the cut-out surfaces 19 and 19a are typically represented by a C-plane cut-out surface 19 and formed by an R-plane cut-out surface 19a. The form to be performed is omitted.
As shown in FIG. 4A, the heat sink plate 11 for forming the semiconductor element housing package 10 has high heat dissipation characteristics, that is, excellent thermal conductivity as much as possible, and the thermal expansion coefficient as high as that of ceramic. It needs to be approximated. Therefore, the heat sink plate 11 is produced by, for example, impregnating copper (Cu) into a substantially rectangular porous W formed by press-molding powdery tungsten (W) and firing. A Cu-W metal plate made of a composite metal plate is used. In addition, for the heat sink plate 11, for example, a bonding metal produced in a substantially rectangular shape by rolling a Cu-Mo or punching and pressing a bonding plate in which a Cu plate is bonded to both sides of a pressed metal plate. A Cu / Cu—Mo / Cu metal plate made of a plate is used. Further, the heat sink plate 11 has at least a substantially rectangular shape on the other main surface, which is the surface opposite to the one main surface on the side to which an insulating frame 12 (see FIG. 4B) to be described later is joined. A notch surface 19 is formed by chamfering processing consisting of a C surface at both ridges in the short direction, which are both ends in the longitudinal direction. Further, the heat sink plate 11 is formed with screw mounting portions 17 (see FIG. 3A) for fixing with screws at both ends in the longitudinal direction. The notch surface 19 and the screw mounting portion 17 can be formed at the same time as the above-described press molding or punching press molding, but can also be formed later by cutting or the like.

As shown in FIG. 4B, a window frame made of ceramic such as alumina (Al ₂ O ₃ ) or aluminum nitride (AlN) is provided in the central portion in the longitudinal direction of one main surface of the heat sink plate 11. The insulating frame 12 having a shape is joined. Further, the upper surface of the insulating frame 12 has a thermal expansion coefficient similar to that of the ceramic forming the insulating frame 12, for example, KV (Fe—Ni—Co alloy, trade name “Kovar”), 42 An external connection terminal 14 made of a metal member such as alloy (Fe—Ni alloy) is joined to form a joined body 15. The external connection terminal 14 is manufactured by forming a metal member into a predetermined shape by cutting, etching, punching, or the like. Incidentally, the thermal expansion coefficient of Al ₂ O ₃ when the insulating frame 12 is made of Al ₂ O ₃ is about 6.7 × 10 ⁻⁶ / k, and the heat sink plate 11 is made of Cu—W. The thermal expansion coefficient of Cu-W is about 6.5 × 10 ⁻⁶ / k, and although it is approximated, it is difficult to match. In addition, the thermal expansion coefficient of KV when the external connection terminal 14 is made of KV is about 5.3 × 10 ⁻⁶ / k, and the thermal expansion coefficient of the insulating frame 12 when made of Al ₂ O _3. Is approximately 6.7 × 10 ⁻⁶ / k, but they are close to each other but difficult to match. Therefore, warpage and undulation occur in the bonded body 15 due to the difference in thermal expansion coefficient between them.

Here, a brief description will be given of a case where the insulating frame 12 is formed of ceramic made of, for example, Al ₂ O ₃ . Al in order to form the ₂ O ₃ insulating frame 12 made of, first, magnesia Al ₂ O ₃ powder, silica, an appropriate amount was added powder a sintering aid such as calcia, dioctyl phthalate plasticizer Then, a binder such as an acrylic resin and a solvent such as toluene, xylene, and alcohols are added, kneaded sufficiently, and defoamed to prepare a slurry having a viscosity of 2000 to 40000 cps. Next, from the slurry, for example, a roll-like sheet having a thickness of 0.25 mm is formed by a doctor blade method or the like, and a ceramic green sheet cut into a rectangular shape of an appropriate size is produced. Next, one or more of the ceramic green sheets are punched into a hollow shape so as to form a window frame-shaped ring, and a metal conductor paste made of a refractory metal such as tungsten or molybdenum is used. A metal conductor printing pattern is formed by screen printing on the lower surface side and the upper surface side. Further, when there are a plurality of ceramic green sheets, they are laminated to form a metal conductor print pattern on the upper surface side and lower surface side of the multilayer body. Then, the refractory metal and the ceramic green sheet are simultaneously fired in a reducing atmosphere to produce an insulating frame 12 having metal conductor patterns on both surfaces. Note that the metal conductor pattern on the lower surface side is formed on the entire peripheral surface in order to braze and bond to the heat sink plate 11 over the entire periphery of the window frame shape.

  Next, a method for manufacturing the joined body 15 formed by joining the heat sink plate 11, the insulating frame body 12, and the external connection terminal 14 will be briefly described. First, the entire surface of the heat sink plate 11, the surfaces of the metal conductor patterns on both sides of the insulating frame 12, and the entire surface of the external connection terminal 14 are each subjected to Ni plating made of Ni, Ni alloy, etc. Form. Then, a high-temperature brazing material 13 made of Ag—Cu brazing material such as BAg-8 (Agutectic alloy consisting of 72% Ag and the balance Cu) is interposed in the central portion of one main surface of the heat sink plate 11. Then, the lower surface side of the insulating frame 12 is placed in contact with each other and heated at about 780 to 900 ° C. for brazing and joining. Furthermore, on the upper surface side of the insulating frame 12, for example, the lower surface side of the distal end portion of the external connection terminal 14 is brought into contact with and placed through a high-temperature brazing material 13 made of Ag—Cu brazing such as BAg-8, It is heated and brazed at about 780 to 900 ° C. A joined body 15 is formed by joining the heat sink plate 11 and the insulating frame body 12 and joining the insulating frame body 12 and the external connection terminal 14. Note that the joined body 15 can also be formed by simultaneously joining the heat sink plate 11 and the insulating frame body 12 and joining the insulating frame body 12 and the external connection terminal 14 together.

  As shown in FIG. 4C, the grinder 27 with diamond abrasive grains is rotated at high speed along the longitudinal direction of the other main surface, which is the lower surface side of the heat sink plate 11, in the joined body 15. Grinding is performed by moving it back and forth. The grinding depth b is smaller than the dimension a of the C surface, which is the size of the notch surface 19 made of the C surface, that is, b <a, and at any part of the other main surface of the heat sink plate 11. The ground surface 18 is formed on the entire surface by grinding so that 0 <b. The bonded body 15 is plated with Ni on all metal surfaces exposed on the outer surface, and further with Au plating on the Ni plating, thereby producing the semiconductor element housing package 10. Therefore, as shown in FIG. 4D, in this semiconductor element housing package 10, the ground surface 18 of the other main surface of the heat sink plate 11 of the joined body 15 is in a state of intersecting with the notch surface 19. . The polishing surface 18 produced by the above-described manufacturing method can prevent the occurrence of burrs, that is, protrusions due to polishing, by the cut-out surface 19 formed of the C surface. The dimensions can be maintained. Further, the dimension of the heat sink plate 11 in the longitudinal direction is such that even if burrs are generated on the polished surface 18, the burrs are small enough to fit within the cut-out surface 19 formed of the C surface. Can be maintained at a predetermined size.

  The package for housing a semiconductor element of the present invention mounts a high-frequency, high-power semiconductor element such as silicon or a gallium arsenide field effect transistor, and can be used, for example, for an RF (Radio Frequency) base station. Further, it can be used as a method for manufacturing a package for housing a semiconductor element for mounting the semiconductor element as described above and using it as a high-performance high-frequency module substrate.

FIGS. 4A and 4B are a plan view and a longitudinal sectional view taken along line A-A ′ of a package for housing a semiconductor element according to an embodiment of the present invention, respectively. FIGS. (A), (B) is explanatory drawing of the ridge part of the transversal direction of the heat sink board of the package for semiconductor element accommodation, respectively. (A), (B) is explanatory drawing by which a semiconductor element is mounted in the same semiconductor element storage package, respectively, and is attached to a base. (A)-(D) is explanatory drawing of the manufacturing method of the package for the said semiconductor element accommodation, respectively. (A), (B) is explanatory drawing of the package for the conventional semiconductor element accommodation, respectively.

Explanation of symbols

  10: package for housing semiconductor elements, 11: heat sink plate, 12: insulating frame, 13: high-temperature brazing material, 14: external connection terminal, 15: joined body, 16: cavity portion, 17: screw mounting portion, 18: grinding Surface, 19, 19a: Notched surface, 20: Semiconductor element, 21: Bonding wire, 22: Lid, 23: Adhesive, 24: High-frequency module substrate, 25: Base, 26: Screw, 27: Grinder

Claims (2)

A substantially rectangular heat sink plate made of a metal plate having high heat dissipation characteristics, a window frame-shaped insulating frame made of ceramic at the center in the longitudinal direction of one main surface of the heat sink plate, and an upper surface of the insulating frame In a package for housing a semiconductor element composed of a joined body to which an external connection terminal made of a metal plate is joined,
A C surface that has a ground surface on the entire surface of the other main surface of the heat sink plate of the joined body, and the position of the ground surface is provided in advance on at least both lateral ridges of the other main surface of the heat sink plate; Or a package for housing a semiconductor element, wherein the package is crossed with a cut-out surface formed of an R surface. A substantially rectangular heat sink plate made of a metal plate having high heat dissipation characteristics, a window frame-shaped insulating frame made of ceramic at the center in the longitudinal direction of one main surface of the heat sink plate, and an upper surface of the insulating frame In a manufacturing method of a package for housing a semiconductor element, in which an external connection terminal made of a metal plate is joined to form a joined body,
Before forming the joined body, a step of chamfering a cut surface formed of a C surface or an R surface on at least both lateral ridges of the other main surface of the heat sink plate; and
After the joined body is formed, the other main surface of the heat sink plate is reciprocally ground along the longitudinal direction so that the grinding depth is smaller than the size of the notch surface formed of the C surface or the R surface. And a method of manufacturing a package for housing a semiconductor element, comprising the step of forming a ground surface on the entire other main surface of the heat sink plate.

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