JP4430477B2 - High heat dissipation type electronic component storage package - Google Patents

High heat dissipation type electronic component storage package Download PDF

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JP4430477B2
JP4430477B2 JP2004219597A JP2004219597A JP4430477B2 JP 4430477 B2 JP4430477 B2 JP 4430477B2 JP 2004219597 A JP2004219597 A JP 2004219597A JP 2004219597 A JP2004219597 A JP 2004219597A JP 4430477 B2 JP4430477 B2 JP 4430477B2
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heat sink
sink plate
electronic component
heat dissipation
ceramic frame
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JP2006041214A (en
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明義 小阪田
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Sumitomo Metal SMI Electronics Device Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

本発明は、高周波用等の厚さの薄い半導体素子や、コンデンサ等の電子部品からの高発熱をヒートシンク板、更にこれを取り付ける基台から放熱させるために、基台にねじ止めされるヒートシンク板、窓枠状のセラミック枠体、及び外部接続端子の接合体からなる高放熱型電子部品収納用パッケージに関する。   The present invention provides a heat sink plate that is screwed to a base in order to dissipate heat from a thin semiconductor element for high frequency use and the like and a heat sink from a heat sink plate and a base to which the heat sink is attached. The present invention relates to a package for housing a high heat radiation type electronic component comprising a window frame-shaped ceramic frame body and a joined body of external connection terminals.

従来から、例えば、RF(Radio Frequency)基地局用等のシリコンや、ガリウム砒素電界効果トランジスタ等の高周波、高出力の半導体素子や、この半導体素子の近傍に同時に実装されるコンデンサ等の電子部品は、作動時の発熱が大きいので、発生する熱を大気中に良好に放散させなければ、装置を正常に作動させることができなくなる恐れがある。そこで、発熱量の大きい高周波用等の電子部品を実装するための高放熱型電子部品収納用パッケージは、電子部品を搭載する部分のキャビティ部が、電子部品の高周波の領域での電気特性を悪化させないために、略長方形状をした高放熱特性を有する金属板からなるヒートシンク板上に形成された電子部品実装領域をセラミック製窓枠状のセラミック枠体で囲繞するように接合して形成されている。そして、高放熱型電子部品収納用パッケージは、電子部品が実装された後、蓋体でキャビティ部を気密に封止するようになっている。また、高周波信号は、セラミック枠体の一方の主面である上面に接合された外部接続端子を介して入出力されるようになっている。そして、電子部品が封止された高放熱型電子部品収納用パッケージは、ヒートシンク板に放熱された熱を更に外部に放熱させるための基台に、ヒートシンク板の略長方形状の長手方向の両端部に形成されている切り欠き部や、貫通孔にねじが取り付けられてねじ止めして固定される。   Conventionally, for example, electronic components such as silicon for RF (Radio Frequency) base stations, high-frequency and high-power semiconductor elements such as gallium arsenide field-effect transistors, and capacitors simultaneously mounted in the vicinity of the semiconductor elements have been used. Since the generated heat during operation is large, the device may not be able to operate normally unless the generated heat is dissipated well into the atmosphere. Therefore, in the high heat dissipation type electronic component storage package for mounting high frequency heat generation electronic components, the cavity portion of the electronic component mounting portion deteriorates the electrical characteristics in the high frequency region of the electronic components. Therefore, the electronic component mounting area formed on the heat sink plate made of a metal plate having a high heat dissipation characteristic in a substantially rectangular shape is joined so as to be surrounded by a ceramic window frame-shaped ceramic frame. Yes. The high heat dissipation electronic component storage package is configured to hermetically seal the cavity portion with a lid after the electronic component is mounted. The high frequency signal is input / output via an external connection terminal joined to the upper surface which is one main surface of the ceramic frame. The high heat dissipation type electronic component storage package in which the electronic components are sealed is a base for further dissipating the heat radiated to the heat sink plate to the outside, and both ends of the substantially rectangular shape of the heat sink plate in the longitudinal direction. Screws are attached to the notches formed in the through holes and through holes, and fixed by screwing.

図4(A)、(B)に示すように、従来の高放熱型電子部品収納用パッケージ50は、セラミックと熱膨張係数が近似し、しかも熱伝導率の高い、例えば、Cu/Cu−Mo/Cu等の接合複合金属板等からなるヒートシンク板51と、Al等からなるセラミック枠体52を用い、ヒートシンク板51の一方の主面の中央部に、セラミック枠体52をその一方の主面側に形成されたメタライズパターン上にAgCuろう53を介して載置し、加熱炉で加熱するろう付け接合で形成している。また、このろう付け接合に併せて、セラミック枠体52には、外部と接続するための金属部材からなる外部接続端子54をセラミック枠体52の他方の主面側に形成されたメタライズパターン上にAgCuろう53を介して載置し、加熱炉で加熱するろう付け接合で形成している。更に、ヒートシンク板51とセラミック枠体52及び外部接続端子54の金属表面には、Niめっき及びAuめっきを施している。また、ヒートシンク板51の長手方向の両端部には、ヒートシンク板51からの熱を更に外部に放熱させるための基台55に取り付けてねじ56でねじ止めして固定するための切り欠きや、貫通孔等からなる取付部57を設けている。 As shown in FIGS. 4A and 4B, the conventional high heat dissipation electronic component storage package 50 has a thermal expansion coefficient similar to that of ceramic and has a high thermal conductivity, for example, Cu / Cu-Mo. A heat sink plate 51 made of a bonded composite metal plate such as Cu / Cu and a ceramic frame body 52 made of Al 2 O 3 or the like, and the ceramic frame body 52 is placed at the center of one main surface of the heat sink plate 51 This is formed by brazing and joining on a metallized pattern formed on the main surface side through AgCu brazing 53 and heating in a heating furnace. In addition to the brazing and joining, the ceramic frame 52 has an external connection terminal 54 made of a metal member for connection to the outside on the metallized pattern formed on the other main surface side of the ceramic frame 52. It mounts via the AgCu brazing 53 and is formed by brazing joining that is heated in a heating furnace. Furthermore, Ni plating and Au plating are applied to the metal surfaces of the heat sink plate 51, the ceramic frame 52, and the external connection terminal 54. Further, at both ends in the longitudinal direction of the heat sink plate 51, a notch for attaching to a base 55 for further dissipating the heat from the heat sink plate 51 to the outside and fixing with a screw 56 is fixed. A mounting portion 57 made of a hole or the like is provided.

高放熱型電子部品収納用パッケージには、電子部品の放熱性を改善するために、ヒートシンク板に、厚み方向に配列した炭素繊維を炭素で結合した一方向性複合材料からなる芯体の上下両面にチタン、ジルコニア、バナジウムもしくはこれらを主成分とする合金の少なくとも1種よりなる接着層と、銅からなる中間層と、モリブデンからなる主層の3層構造を有する金属層を被着させたものを用いたパッケージが提案されている(例えば、特許文献1参照)。また、高放熱型電子部品収納用パッケージには、ヒートシンク板と基台との密着性をよくして電子部品の放熱性を改善するために、ヒートシンク板の長手方向の両端部に突起を設け、この突起を支点にし突起部から若干内側の両端部をねじで締め付けて、ヒートシンク板の長手方向の中央部を基台に密接させるものが提案されている(例えば、特許文献2参照)。更には、高放熱型電子部品収納用パッケージには、ヒートシンク板と基台の間の放熱特性や、電気的特性を向上させることを目的に、ヒートシンク板と基台の間にインジウムシートを挟んでねじで締め付けているものが提案されている(例えば、特許文献3参照)。   The high heat dissipation type electronic component storage package has upper and lower surfaces of a core made of a unidirectional composite material in which carbon fibers arrayed in the thickness direction are bonded to the heat sink plate in order to improve heat dissipation of the electronic component. A metal layer having a three-layer structure consisting of an adhesive layer made of at least one of titanium, zirconia, vanadium or an alloy containing these as a main component, an intermediate layer made of copper, and a main layer made of molybdenum is applied. A package using the above has been proposed (see, for example, Patent Document 1). In addition, in the high heat dissipation type electronic component storage package, in order to improve the heat dissipation of the electronic component by improving the adhesion between the heat sink plate and the base, protrusions are provided at both ends in the longitudinal direction of the heat sink plate, A method has been proposed in which both ends on the inside of the protrusion are tightened with screws using the protrusion as a fulcrum, and the central portion in the longitudinal direction of the heat sink plate is brought into close contact with the base (for example, see Patent Document 2). Furthermore, in the high heat dissipation type electronic component storage package, an indium sheet is sandwiched between the heat sink plate and the base for the purpose of improving heat dissipation characteristics and electrical characteristics between the heat sink plate and the base. What has been tightened with screws has been proposed (for example, see Patent Document 3).

特開2000−183197号公報JP 2000-183197 A 特開平4−233752号公報Japanese Patent Laid-Open No. 4-237552 特開2001−230349号公報JP 2001-230349 A

しかしながら、前述したような従来の高放熱型電子部品収納用パッケージは、次のような問題がある。
(1)高放熱型電子部品収納用パッケージに実装される最近の電子部品、例えば、RF基地局用等で代表される半導体素子や、コンデンサ等の電子部品は、高周波化が進んで電子部品からの発熱が大きくなり、高放熱化対応のために電子部品の厚さを薄型化にして対応している。このような薄型化された半導体素子や、コンデンサ等の電子部品をAuSiろう等の接合材で加熱接合して実装する場合においては、電子部品が搭載されるヒートシンク板の表面の僅かな突起や、表面に付着した小塊異物等の存在によって、接合材の冷却過程の収縮によって、電子部品にクラックや、破壊が発生することがあり、装置として機能しない致命的な欠陥となっている。
(2)従来の高放熱型電子部品収納用パッケージは、電子部品の高放熱化対応のために、ヒートシンク板の材料や構造を変更したり、ヒートシンク板と基台との密着性を改善したとしても、電子部品の薄型化での高放熱性対応を解消するまでには至らないので、ヒートシンク板の表面の僅かな突起の存在による電子部品のクラック発生を防止することが難しくなっている。
本発明は、かかる事情に鑑みてなされたものであって、半導体素子や、コンデンサ等の電子部品の高放熱化対応のために、電子部品の厚さを薄型化にしたとしても、電子部品にクラックや、破壊の発生のない高放熱型電子部品収納用パッケージを提供することを目的とする。
However, the conventional high heat dissipation electronic component storage package as described above has the following problems.
(1) Recent electronic components mounted on a package for storing high heat radiation type electronic components, for example, semiconductor elements represented by for RF base stations, electronic components such as capacitors, etc. As the heat generation increases, the thickness of the electronic components is reduced to cope with higher heat dissipation. When mounting such thinned semiconductor elements and electronic components such as capacitors by heat bonding with a bonding material such as AuSi brazing, slight protrusions on the surface of the heat sink plate on which the electronic components are mounted, Due to the presence of a small foreign substance attached to the surface, the shrinkage of the cooling process of the bonding material may cause a crack or breakage of the electronic component, which is a fatal defect that does not function as a device.
(2) The conventional high heat dissipation type electronic component storage package has changed the material and structure of the heat sink plate or improved the adhesion between the heat sink plate and the base in order to cope with the high heat dissipation of the electronic component. However, it is difficult to prevent the occurrence of cracks in the electronic component due to the presence of slight protrusions on the surface of the heat sink plate because the high heat dissipation response due to the thinning of the electronic component cannot be eliminated.
The present invention has been made in view of such circumstances, and even if the thickness of the electronic component is reduced in order to cope with higher heat dissipation of the electronic component such as a semiconductor element or a capacitor, the electronic component An object of the present invention is to provide a high heat dissipation type electronic component storage package that is free from cracks and breakage.

前記目的に沿う本発明に係る高放熱型電子部品収納用パッケージは、電子部品からの発熱を放熱するための金属板からなるヒートシンク板にセラミック枠体がろう付け接合され、セラミック枠体内のヒートシンク板上に電子部品が載置される高放熱型電子部品収納用パッケージにおいて、ヒートシンク板とセラミック枠体をAgCuろうで接合し、ヒートシンク板の表面にめっき被膜が施された後、セラミック枠体で囲繞されたヒートシンク板の電子部品が載置されるキャビティ部の底面にセラミック枠体の内壁とクリアランスを有して嵌合でき、ヒートシンク板との当接面が中心部で最大突出部となる曲率半径を有する凸形状からなる上治具を当接すると共に、ヒートシンク板の裏面全体を包含して裏面との当接面がヒートシンク板の裏面中心部で最大凹み部となる上治具の曲率半径と同じ曲率半径を有する凹形状からなる下治具を当接してヒートシンク板が上治具と下治具を介して押圧されて、キャビティ部の底面が平滑面を有する。 The high heat dissipation type electronic component storage package according to the present invention that meets the above-mentioned object is characterized in that a ceramic frame is brazed and joined to a heat sink plate made of a metal plate for radiating heat generated from the electronic component, and the heat sink plate in the ceramic frame is joined. In a high heat dissipation type electronic component storage package on which electronic components are placed, a heat sink plate and a ceramic frame are joined with AgCu brazing , and a plating film is applied to the surface of the heat sink plate, and then surrounded by a ceramic frame. The radius of curvature at which the inner wall of the ceramic frame can be fitted to the bottom of the cavity where the electronic components of the heat sink plate are placed with a clearance, and the contact surface with the heat sink plate is the maximum protrusion at the center. with contact of the upper jig consisting of a convex shape having a back surface of the contact surface is a heat sink plate with the backside to encompass the entire back surface of the heat sink plate And the heat sink plate lower jig abuts consisting concave shape having the same radius of curvature as the upper tool radius of the largest recess in eccentric part is pressed through the upper jig and the lower jig, the cavity The bottom surface has a smooth surface.

請求項1記載の高放熱型電子部品収納用パッケージは、ヒートシンク板とセラミック枠体をAgCuろうで接合し、ヒートシンク板の表面にめっき被膜が施された後、セラミック枠体で囲繞されたヒートシンク板の電子部品が載置されるキャビティ部の底面にセラミック枠体の内壁とクリアランスを有して嵌合でき、ヒートシンク板との当接面が中心部で最大突出部となる曲率半径を有する凸形状からなる上治具を当接すると共に、ヒートシンク板の裏面全体を包含して裏面との当接面がヒートシンク板の裏面中心部で最大凹み部となる上治具の曲率半径と同じ曲率半径を有する凹形状からなる下治具を当接してヒートシンク板が上治具と下治具を介して押圧されて、キャビティ部の底面が平滑面を有するので、キャビティ部の底面の僅かな突起や、表面に付着した小塊異物等を容易且つ確実に潰してヒートシンク板中に埋め込んでキャビティ部の底面を平滑にすることができ、キャビティ部の底面に接合される半導体素子や、コンデンサ等の電子部品が厚さを薄型化したものであっても、電子部品にクラックや、破壊を発生させることなく電子部品を接合することができる。また、ヒートシンク板に僅かな反りがあっても、キャビティ部の表面の僅かな突起や、表面に付着した小塊異物等を容易に潰してキャビティ部の底面を平滑にすることができ、電子部品が厚さを薄型化されたものであっても、電子部品にクラックや、破壊を発生させることなく接合することができると共に、ヒートシンク板裏面を緩やかな曲率半径を有する凸形状とすることができて基台との取付密着性を向上でき、電子部品からの発熱の放熱化を向上させることができる。 Sink high heat dissipation type electronic component storing package according to claim 1 Symbol placement is that by joining the heat sink plate and the ceramic frame body at AgCu brazing, after the plating film is applied to the surface of the heat sink plate, which is surrounded by the insulating wall A convex portion having a radius of curvature that can be fitted with a clearance between the inner wall of the ceramic frame body and a clearance on the bottom surface of the cavity portion on which the electronic components of the plate are placed , and the contact surface with the heat sink plate is the maximum protruding portion at the center portion. with contact of a shape upper jig, the same radius of curvature as the radius of curvature of the upper jig contact surface with the back surface to encompass the entire back surface of the heat sink plate with the maximum recess in the back surface center portion of the heat sink plate the is pressed through a heat sink plate lower jig abuts consisting concave shape upper jig and the lower jig having, since the bottom surface of the cavity portion has a smooth surface, a small bottom of the cavity Force and, embedded in the heat sink plate in and nodules foreign objects easily and reliably crushed attached to the surface can be made smooth the bottom of the cavity, and a semiconductor element is bonded to the bottom surface of the cavity, capacitors, etc. Even if the electronic component has a reduced thickness, the electronic component can be joined without causing cracks or breakage in the electronic component. In addition, even if the heat sink plate is slightly warped, it is possible to easily crush the slight protrusions on the surface of the cavity portion and small foreign matter adhering to the surface to smooth the bottom surface of the cavity portion. Even if the thickness is reduced, it can be bonded to electronic components without causing cracks or breakage, and the back surface of the heat sink plate can have a convex shape with a gentle radius of curvature. Thus, the mounting adhesion with the base can be improved, and the heat release from the electronic components can be improved.

続いて、添付した図面を参照しつつ、本発明を具体化した実施の形態について説明し、本発明の理解に供する。
ここに、図1(A)、(B)はそれぞれ本発明の一実施の形態に係る高放熱型電子部品収納用パッケージの平面図、A−A’線縦断面図、図2(A)、(B)はそれぞれ同高放熱型電子部品収納用パッケージの変形例の説明図、他の変形例の説明図、図3(A)、(B)はそれぞれ同高放熱型電子部品収納用パッケージに電子部品が実装されて基台に取り付けられる説明図である。
Next, embodiments of the present invention will be described with reference to the accompanying drawings to provide an understanding of the present invention.
Here, FIGS. 1A and 1B are a plan view, a vertical cross-sectional view taken along line AA ′, and FIG. 2A, respectively, of a high heat dissipation electronic component storage package according to an embodiment of the present invention. (B) is an explanatory view of a modified example of the same high heat dissipation type electronic component storage package, an explanatory view of another modified example, and FIGS. 3 (A) and (B) are respectively the same high heat dissipation type electronic component storage package It is explanatory drawing by which an electronic component is mounted and attached to a base.

図1(A)、(B)に示すように、本発明の一実施の形態に係る高放熱型電子部品収納用パッケージ10は、実装される、例えば、高周波用の半導体素子や、コンデンサ等の電子部品22(図3(A)参照)から発生する高温、且つ大量の熱を放熱するための高放熱特性を有し、セラミックと熱膨張係数が近似する略長方形板状の金属板からなるヒートシンク板11の一方の主面に、セラミック製のセラミック枠体12の一方の主面を、例えば、AgCuろう等の高温ろう材(図示せず)でろう付け接合して有している。このヒートシンク板11とセラミック枠体12との接合によって、高放熱型電子部品収納用パッケージ10には、セラミック枠体12の壁面と、この壁面で囲繞されたヒートシンク板11の一方の主面とで電子部品22を搭載するためのキャビティ部13が形成されている。また、高放熱型電子部品収納用パッケージ10は、セラミック枠体12の他方の主面である上面に、電子部品22をキャビティ部13のヒートシンク板11上に搭載して電気的に接続し、外部との電気的導通を行うための金属板からなるリードフレーム形状の外部接続端子14を、例えば、AgCuろう等の高温ろう材(図示せず)でろう付け接合して有している。更には、高放熱型電子部品収納用パッケージ10は、ヒートシンク板11の長手方向の両端部に、基台27(図3(B)参照)にねじ28(図3(A)、(B)参照)でねじ止めして取り付けるための切り欠きや、貫通孔等からなる取付部15を有している。そして、高放熱型電子部品収納用パッケージ10は、ヒートシンク板11と、セラミック枠体12、及び外部接続端子14の接合体16として形成されている。   As shown in FIGS. 1A and 1B, a high heat dissipation electronic component storage package 10 according to an embodiment of the present invention is mounted on, for example, a high frequency semiconductor element or a capacitor. A heat sink composed of a substantially rectangular plate-like metal plate having high heat dissipation characteristics for radiating a large amount of heat generated from the electronic component 22 (see FIG. 3A) and having a thermal expansion coefficient approximate to that of ceramic. One main surface of the ceramic frame 12 made of ceramic is brazed and joined to one main surface of the plate 11 with a high-temperature brazing material (not shown) such as AgCu brazing. By bonding the heat sink plate 11 and the ceramic frame body 12, the high heat dissipation electronic component housing package 10 has a wall surface of the ceramic frame body 12 and one main surface of the heat sink plate 11 surrounded by the wall surface. A cavity portion 13 for mounting the electronic component 22 is formed. Further, the high heat dissipation type electronic component storage package 10 has an electronic component 22 mounted on the heat sink plate 11 of the cavity portion 13 and electrically connected to the upper surface, which is the other main surface of the ceramic frame 12, and externally connected. A lead frame-shaped external connection terminal 14 made of a metal plate for electrical continuity is brazed with a high-temperature brazing material (not shown) such as AgCu brazing, for example. Further, the high heat dissipation type electronic component storage package 10 has a base 27 (see FIG. 3B) and screws 28 (see FIGS. 3A and 3B) at both ends of the heat sink plate 11 in the longitudinal direction. ), And a mounting portion 15 made up of a through-hole or the like. The high heat dissipation electronic component storage package 10 is formed as a joined body 16 of the heat sink plate 11, the ceramic frame body 12, and the external connection terminal 14.

この接合体16からなる高放熱型電子部品収納用パッケージ10には、接合体16の表面に露出する全ての金属面に、例えば、Niや、NiCo等のめっき被膜が施された後、電子部品22が載置されるキャビティ部13の底面部分のヒートシンク板11の一方の主面には、セラミック枠体12の内壁との間に若干のクリアランスを有して嵌合できる上治具17が当接される。また、ヒートシンク板11の他方の主面である裏面には、裏面全体を包含するようにして下治具18が当接される。そして、ヒートシンク板11は、上治具17と下治具18を介して押圧されている。この押圧によって、高放熱型電子部品収納用パッケージ10は、キャビティ部13の表面に突出する僅かな突起や、表面に付着した小塊異物等を潰したキャビティ部13の底面が平滑面19を有している。   In the high heat dissipation type electronic component storage package 10 composed of the joined body 16, after all the metal surfaces exposed on the surface of the joined body 16 are plated with, for example, Ni or NiCo, the electronic component An upper jig 17 that can be fitted with a slight clearance between the inner wall of the ceramic frame 12 is applied to one main surface of the heat sink plate 11 at the bottom surface portion of the cavity portion 13 on which 22 is placed. Touched. Further, the lower jig 18 is brought into contact with the back surface which is the other main surface of the heat sink plate 11 so as to include the entire back surface. The heat sink plate 11 is pressed through the upper jig 17 and the lower jig 18. Due to this pressing, the high heat dissipation electronic component storage package 10 has a smooth surface 19 on the bottom surface of the cavity portion 13 crushed by slight protrusions protruding on the surface of the cavity portion 13 and small foreign matter adhering to the surface. is doing.

次いで、図2(A)、(B)を参照しながら、本発明の一実施の形態に係る高放熱型電子部品収納用パッケージ10の変形例の高放熱型電子部品収納用パッケージ10a、及び他の変形例の高放熱型電子部品収納用パッケージ10bを説明する。
図2(A)に示すように、高放熱型電子部品収納用パッケージ10の変形例の高放熱型電子部品収納用パッケージ10aは、高放熱型電子部品収納用パッケージ10の場合と同様に、ヒートシンク板11、セラミック枠体12、及び外部接続端子14からなる接合体16の表面に露出する全ての金属面にめっき被膜が施される。この後に、キャビティ部13の底面部分のヒートシンク板11の一方の主面には、セラミック枠体12の内壁との間に若干のクリアランスを有して嵌合でき、ヒートシンク板11との当接面が中心部で最大突出部となる緩やかな曲率半径を有する凸形状20からなる上治具17aが当接される。そして、ヒートシンク板11の他方の主面である裏面には、裏面全体を包含するようにして下治具18が当接され、ヒートシンク板11が上治具17aと下治具18を介して押圧されている。この押圧によって、高放熱型電子部品収納用パッケージ10aは、ヒートシンク板11に僅かな反りがあったとしても、キャビティ部13の表面に突出する僅かな突起や、表面に付着した小塊異物等を容易且つ確実にヒートシンク板11中に埋め込んでキャビティ部13の底面が平滑面19を有している。
Next, referring to FIGS. 2A and 2B, a high heat dissipation type electronic component storage package 10a as a modified example of the high heat dissipation type electronic component storage package 10 according to an embodiment of the present invention, and others. A high heat radiation type electronic component storage package 10b of the modified example will be described.
As shown in FIG. 2A, a high heat dissipation type electronic component storage package 10a, which is a modification of the high heat dissipation type electronic component storage package 10, is similar to the case of the high heat dissipation type electronic component storage package 10. All the metal surfaces exposed on the surface of the joined body 16 including the plate 11, the ceramic frame body 12, and the external connection terminals 14 are plated. After this, one main surface of the heat sink plate 11 on the bottom surface of the cavity portion 13 can be fitted with a slight clearance between the inner wall of the ceramic frame 12 and the contact surface with the heat sink plate 11. The upper jig 17a made of the convex shape 20 having a gentle radius of curvature that becomes the maximum protrusion at the center is brought into contact. Then, the lower jig 18 is brought into contact with the back surface which is the other main surface of the heat sink plate 11 so as to include the entire back surface, and the heat sink plate 11 is pressed via the upper jig 17 a and the lower jig 18. Has been. By this pressing, even if the heat sink plate 11a has a slight warp, the high heat dissipation electronic component storage package 10a removes a slight protrusion protruding on the surface of the cavity portion 13 or a small lump foreign matter adhering to the surface. The bottom surface of the cavity 13 has a smooth surface 19 that is embedded in the heat sink plate 11 easily and reliably.

図2(B)に示すように、高放熱型電子部品収納用パッケージ10の他の変形例の高放熱型電子部品収納用パッケージ10bは、高放熱型電子部品収納用パッケージ10、10aの場合と同様に、接合体16の表面に露出する全ての金属面にめっき被膜が施される。この後に、キャビティ部13の底面部分のヒートシンク板11の一方の主面には、セラミック枠体12の内壁との間に若干のクリアランスを有して嵌合できる上治具17、又は、ヒートシンク板11との当接面が緩やかな曲率半径を有する凸形状20からなる上治具17aが当接される。そして、ヒートシンク板11の他方の主面である裏面には、裏面全体を包含するようにして、ヒートシンク板11の裏面との当接面がヒートシンク板11の裏面中心部で最大凹み部となる緩やかな曲率半径を有する凹形状21からなる下治具18aが当接され、ヒートシンク板11がこの下治具18aと、上治具17又は凸形状20を有する上治具17aを介して押圧されている。この押圧によって、高放熱型電子部品収納用パッケージ10bは、ヒートシンク板11に僅かな反りがあったとしても、キャビティ部13の底部表面に突出する僅かな突起や、表面に付着した小塊異物等を容易にヒートシンク板11中に埋め込むと共に、ヒートシンク板11裏面を緩やかな曲率半径を有する凸状とすることができて基台27との取付密着性を向上し、電子部品22からの発熱の放熱化を向上できるキャビティ部13の底面が平滑面19を有している。なお、接合体16を形成した後に、曲げ強度の高いヒートシンク板11の裏面に凸状を持たせるためには、大きい押圧力が必要となるので、接合体16を形成する前に、ヒートシンク板11の裏面に凸状を形成しておくことが好ましい。この場合の下治具18aに形成する凹形状21は、ヒートシンク板11の裏面の凸状と略同等の曲率半径を有する凹みを設けるのがよい。   As shown in FIG. 2B, the high heat dissipation type electronic component storage package 10b of another modification of the high heat dissipation type electronic component storage package 10 is the same as the case of the high heat dissipation type electronic component storage package 10, 10a. Similarly, a plating film is applied to all metal surfaces exposed on the surface of the joined body 16. After this, the upper jig 17 that can be fitted with a slight clearance between the inner wall of the ceramic frame 12 or the heat sink plate on one main surface of the heat sink plate 11 at the bottom surface of the cavity portion 13. The upper jig 17a made of a convex shape 20 having a gentle curvature radius at the contact surface with the contact 11 is contacted. Then, the back surface, which is the other main surface of the heat sink plate 11, includes the entire back surface so that the contact surface with the back surface of the heat sink plate 11 becomes a maximum recess at the center of the back surface of the heat sink plate 11. A lower jig 18 a made of a concave shape 21 having a large radius of curvature is brought into contact with the heat sink plate 11 and is pressed through the lower jig 18 a and the upper jig 17 or the upper jig 17 a having a convex shape 20. Yes. Due to this pressing, even if the heat sink plate 11 is slightly warped, the high heat dissipation type electronic component storage package 10b has slight protrusions protruding on the bottom surface of the cavity part 13, small lump foreign matter adhering to the surface, etc. Can be easily embedded in the heat sink plate 11, and the back surface of the heat sink plate 11 can be formed into a convex shape having a gentle radius of curvature to improve attachment adhesion to the base 27, and heat dissipation from the electronic component 22. The bottom surface of the cavity 13 that can improve the smoothing has a smooth surface 19. In addition, in order to give convexity to the back surface of the heat sink plate 11 having high bending strength after the joined body 16 is formed, a large pressing force is required. Therefore, before the joined body 16 is formed, the heat sink plate 11 is formed. It is preferable that a convex shape is formed on the back surface. In this case, the concave shape 21 formed in the lower jig 18 a is preferably provided with a concave having a radius of curvature substantially equal to the convex shape of the back surface of the heat sink plate 11.

図3(A)、(B)に示すように、高放熱型電子部品収納用パッケージ10、10a、10bは、キャビティ部13に電子部品22が接合され、電子部品22と外部接続端子14とがボンディングワイヤ23等で接続された後、樹脂や、セラミックや、金属等からなる蓋体24を樹脂や、ガラス等の接着材25で接着してキャビティ部13内が気密に封止されて、例えば、高周波用モジュール基板26等を形成している。この高周波用モジュール基板26は、電子部品22からの発熱をヒートシンク板11に放熱し、更に、外部に放熱させるための基台27に、ヒートシンク板11に設けられている取付部15にねじ28を挿通させてねじ止めして固定される。高周波用モジュール基板26は、電子部品22の発熱を効率よく基台27から放熱させるために、ヒートシンク板11の他方の主面である裏面が緩やかな曲率半径の凸状を有することで、少なくとも、キャビティ部13内に実装された電子部品22の実装エリア部に相当する部分が基台27に密接していることが好ましい。   As shown in FIGS. 3 (A) and 3 (B), in the high heat radiation type electronic component storage package 10, 10a, 10b, the electronic component 22 is joined to the cavity portion 13, and the electronic component 22 and the external connection terminal 14 are connected. After being connected with the bonding wire 23 or the like, the lid 24 made of resin, ceramic, metal, or the like is bonded with an adhesive 25 such as resin or glass, and the cavity 13 is hermetically sealed. The high frequency module substrate 26 and the like are formed. The high frequency module substrate 26 radiates heat generated from the electronic component 22 to the heat sink plate 11, and further attaches screws 28 to the mounting portion 15 provided on the heat sink plate 11 to the base 27 for radiating heat to the outside. It is inserted and fixed with screws. The high-frequency module substrate 26 has at least a convex surface with a gentle curvature radius on the back surface, which is the other main surface of the heat sink plate 11, in order to efficiently dissipate the heat generated by the electronic component 22 from the base 27. A portion corresponding to the mounting area portion of the electronic component 22 mounted in the cavity portion 13 is preferably in close contact with the base 27.

通常、高放熱型電子部品収納用パッケージ10、10a、10bには、ヒートシンク板11のキャビティ部13の底部表面に僅かな突起状に突出する異物や、ろう付け接合時にキャビティ部13の底部表面に流れ出したろう材のエッチング処理後に残った残り滓による小塊異物等が付着している。しかしながら、上記の高放熱型電子部品収納用パッケージ10、10a、10bは、この僅かな突起や、小塊異物等をヒートシンク板11中に埋め込んで平滑面19を有しているので、薄型化された電子部品22が接合材を介して接合され、接合材の冷却過程での引っ張り応力が発生したとしても電子部品22にクラックや、破壊の発生を防止することができる。   Usually, the high heat dissipation type electronic component storage packages 10, 10 a, and 10 b have foreign matters protruding in a slightly protruding shape on the bottom surface of the cavity portion 13 of the heat sink plate 11, or on the bottom surface of the cavity portion 13 during brazing joining. Small lump foreign matter or the like due to the remaining residue remaining after the etching processing of the brazing material that has flowed out adheres. However, the high heat dissipation type electronic component storage package 10, 10 a, 10 b has a smooth surface 19 by embedding these slight protrusions and small foreign matter in the heat sink plate 11. Even if the electronic component 22 is bonded through the bonding material and a tensile stress is generated in the cooling process of the bonding material, the electronic component 22 can be prevented from being cracked or broken.

次いで、本発明の一実施の形態に係る高放熱型電子部品収納用パッケージ10、10a、10b(以下、代表して10と記す)の製造方法を説明する。
先ず、高放熱型電子部品収納用パッケージ10を形成する接合体16に用いられる各部材について、説明する。接合体16を形成するためのヒートシンク板11は、熱膨張係数をセラミックの熱膨張係数と近似させ、熱伝導率の高い高放熱特性を有する、例えば、ポーラス状のタングステン(W)に銅(Cu)を含浸させたりして作製されるCu−W系の複合金属板や、Cuとモリブデン(Mo)からなるCu−Mo系の合金金属板や、Cu−Mo系複合金属板の両面にCu板をクラッドしたCu/Cu−Mo/Cuの接合板等から形成されている。ヒートシンク板11の選定には、放熱特性を向上させるために、熱伝導性のよいCuの比率を高めたものを用いることが有効であるが、Cuは熱膨張係数が高いので、セラミックとの熱膨張係数の整合性を図るためのCu以外の材料選定や、Cuと他の金属との板材としての構造が重要となる。そして、ヒートシンク板11は、切削加工や、粉末冶金等の手法を用いて基台27にねじ止め固定するための取付部15を設けて、実質的に長方形状に形成されている。なお、因みに、ヒートシンク板11がCu−Wの場合は、熱伝導率が220W/m・K程度、熱膨張係数が7.8×10−6/K(30〜800℃)程度であり、Cu/Cu−Mo/Cu(厚さ比率=2:3:2)の場合は、熱伝導率が260W/m・K程度、熱膨張係数が9.2×10−6/K(30〜800℃)程度であるので、接合体16の許容反りと許容放熱特性に合わせて材料の選定がなされている。
Next, a manufacturing method of the high heat radiation type electronic component storage package 10, 10a, 10b (hereinafter referred to as 10) according to an embodiment of the present invention will be described.
First, each member used for the joined body 16 forming the high heat radiation type electronic component storage package 10 will be described. The heat sink plate 11 for forming the joined body 16 has a thermal expansion coefficient approximate to that of a ceramic and has high heat dissipation characteristics with high thermal conductivity, for example, porous tungsten (W) and copper (Cu Cu-W-based composite metal plates prepared by impregnating a Cu-Mo-based composite metal plate, Cu-Mo-based alloy metal plates made of Cu and molybdenum (Mo), and Cu plates on both sides of the Cu-Mo-based composite metal plate. Is formed from a Cu / Cu—Mo / Cu bonding plate or the like clad. In selecting the heat sink plate 11, it is effective to use a material having a high ratio of Cu having good thermal conductivity in order to improve heat dissipation characteristics. However, since Cu has a high thermal expansion coefficient, Material selection other than Cu for achieving consistency of expansion coefficients, and a structure as a plate material of Cu and another metal are important. The heat sink plate 11 is formed in a substantially rectangular shape by providing an attachment portion 15 for screwing and fixing to the base 27 using a technique such as cutting or powder metallurgy. Incidentally, when the heat sink plate 11 is Cu—W, the thermal conductivity is about 220 W / m · K, the thermal expansion coefficient is about 7.8 × 10 −6 / K (30 to 800 ° C.), and Cu / Cu—Mo / Cu (thickness ratio = 2: 3: 2), the thermal conductivity is about 260 W / m · K, and the thermal expansion coefficient is 9.2 × 10 −6 / K (30 to 800 ° C. Therefore, the material is selected in accordance with the allowable warpage and allowable heat dissipation characteristics of the joined body 16.

次に、接合体16を形成するためのセラミック枠体12は、アルミナ(Al)や、窒化アルミニウム(AlN)や、低温焼成セラミック等からなるセラミックから形成されている。セラミック枠体12がセラミックの一例であるAlからなる場合には、先ず、Al粉末にマグネシア、シリカ、カルシア等の焼結助剤を適当量加えた粉末に、ジオクチルフタレート等の可塑剤と、アクリル樹脂等のバインダー、及びトルエン、キシレン、アルコール類等の溶剤を加え、十分に混練し、脱泡して粘度2000〜40000cpsのスラリーを作製している。次いで、ドクターブレード法等によって、例えば、厚み0.25mmのロール状のシートを形成し、適当なサイズの矩形状に切断したセラミックグリーンシートを作製する。 Next, the ceramic frame 12 for forming the joined body 16 is formed of a ceramic made of alumina (Al 2 O 3 ), aluminum nitride (AlN), low-temperature fired ceramic, or the like. When the ceramic frame 12 is made of Al 2 O 3 which is an example of ceramic, first, dioctyl phthalate or the like is added to a powder obtained by adding an appropriate amount of a sintering aid such as magnesia, silica or calcia to Al 2 O 3 powder. A plasticizer, a binder such as an acrylic resin, and a solvent such as toluene, xylene, and alcohols are added, kneaded sufficiently, and defoamed to prepare a slurry having a viscosity of 2000 to 40000 cps. Next, for example, a roll-shaped sheet having a thickness of 0.25 mm is formed by a doctor blade method or the like, and a ceramic green sheet cut into a rectangular shape having an appropriate size is produced.

1又は複数枚のセラミックグリーンシートには、窓枠形状になるように中空部を打ち抜き加工すると共に、タングステンや、モリブデン等の高融点金属からなる金属導体ペーストを用いて、セラミック枠体12の下面側が一方の主面、上面側が他方の主面となるようにスクリーン印刷してそれぞれ金属導体パターンを形成する。また、セラミックグリーンシートが複数枚の場合には、積層して積層体の一方の主面、及び他方の主面が金属導体パターンとなるようにスクリーン印刷して形成する。そして、高融点金属とセラミックグリーンシートを還元雰囲気中で同時焼成して両表面に金属導体パターンを有するセラミック枠体12を作製する。なお、一方の表面の金属導体パターンは、ヒートシンク板11と窓枠形状の全周にわたってろう付け接合するためにセラミック枠体12の下面全周面に形成されている。また、因みに、Alの熱膨張係数は、6.7×10−6/K程度であり、ヒートシンク板11と近似はしているが一致させることは難しいので、基本的に接合後の反りの発生を防止することが難しい。 One or a plurality of ceramic green sheets are punched into a hollow shape so as to have a window frame shape, and a metal conductor paste made of a refractory metal such as tungsten or molybdenum is used to form a lower surface of the ceramic frame 12. The metal conductor pattern is formed by screen printing so that the side becomes one main surface and the upper surface side becomes the other main surface. Further, when there are a plurality of ceramic green sheets, they are laminated and screen-printed so that one main surface and the other main surface of the laminate are metal conductor patterns. Then, a refractory metal and a ceramic green sheet are simultaneously fired in a reducing atmosphere to produce a ceramic frame 12 having metal conductor patterns on both surfaces. The metal conductor pattern on one surface is formed on the entire peripheral surface of the lower surface of the ceramic frame 12 in order to braze and join the heat sink plate 11 to the entire periphery of the window frame shape. In addition, the thermal expansion coefficient of Al 2 O 3 is about 6.7 × 10 −6 / K, and although it is approximate to the heat sink plate 11 but is difficult to match, basically, after joining, It is difficult to prevent warping.

次に、接合体16を形成するための外部接続端子14は、KV(Fe−Ni−Co系合金、商品名「Kovar(コバール)」)や、42アロイ(Fe−Ni系合金)等のセラミックと熱膨張係数が近似する金属部材からなり、切削加工や、エッチング加工や、打ち抜き加工等で1つの高放熱型電子部品収納用パッケージ10に設ける複数の外部接続端子14をタイバー部で支え持つようにしたリードフレーム形状に形成されている。なお、因みに、KVの熱膨張係数は、5.3×10−6/K程度であり、セラミックの熱膨張係数に近似させている。 Next, the external connection terminals 14 for forming the joined body 16 are ceramics such as KV (Fe—Ni—Co alloy, trade name “Kovar”) or 42 alloy (Fe—Ni alloy). And a plurality of external connection terminals 14 provided in one high heat radiation type electronic component storage package 10 by a tie bar portion by cutting, etching, punching, or the like. It is formed in a lead frame shape. Incidentally, the thermal expansion coefficient of KV is about 5.3 × 10 −6 / K, which is approximated to the thermal expansion coefficient of ceramic.

次いで、ヒートシンク板11と、セラミック枠体12、及び外部接続端子14を接合して形成する接合体16の作製方法を説明する。先ず、ヒートシンク板11の全表面、セラミック枠体12の両面の金属導体パターンの表面、及び外部接続端子14の全表面には、それぞれNiや、Ni合金等からなる第1のNiめっきを施す。次に、ヒートシンク板11の平面形状からなる一方の主面の中央部に、例えば、BAg−8(Agが72%と、残部がCuからなる共晶合金)等のAg−Cuろうからなるセラミック枠体12の形状に合わせた窓枠形状の高温ろう材を介してセラミック枠体12の下面側である一方の主面を当接させて載置し、約780〜900℃で加熱してろう付け接合している。次に、セラミック枠体12の上面側である他方の主面に、例えば、BAg−8等のAg−Cuろうからなる高温ろう材を介して外部接続端子14の先端部の下面側を当接させて載置し、約780〜900℃で加熱してろう付け接合している。このヒートシンク板11と、セラミック枠体12の接合、及びセラミック枠体12と外部接続端子14の接合によって、接合体16を形成している。そして、接合体16の外表面に露出する全金属表面上には、第2のNiめっきが施される。なお、接合体16の形成は、ヒートシンク板11と、セラミック枠体12の接合、及びセラミック枠体12と外部接続端子14の接合を同時に行って形成することもできる。   Next, a manufacturing method of the joined body 16 formed by joining the heat sink plate 11, the ceramic frame body 12, and the external connection terminal 14 will be described. First, the first Ni plating made of Ni, Ni alloy, or the like is applied to the entire surface of the heat sink plate 11, the surfaces of the metal conductor patterns on both surfaces of the ceramic frame 12, and the entire surface of the external connection terminal 14. Next, a ceramic made of Ag-Cu brazing such as BAg-8 (eutectic alloy consisting of 72% Ag and the remainder Cu) is formed at the center of one main surface of the heat sink plate 11 having a planar shape. Place one main surface on the lower surface side of the ceramic frame 12 in contact with a window frame-shaped high-temperature brazing material that matches the shape of the frame 12, and heat at about 780 to 900 ° C. It is attached. Next, the lower surface side of the tip end portion of the external connection terminal 14 is brought into contact with the other main surface, which is the upper surface side of the ceramic frame body 12, via a high-temperature brazing material made of, for example, Ag-Cu brazing such as BAg-8. And brazed by heating at about 780 to 900 ° C. A joined body 16 is formed by joining the heat sink plate 11 and the ceramic frame body 12 and joining the ceramic frame body 12 and the external connection terminal 14. Then, the second Ni plating is performed on the entire metal surface exposed on the outer surface of the joined body 16. The joined body 16 can be formed by simultaneously joining the heat sink plate 11 and the ceramic frame body 12 and joining the ceramic frame body 12 and the external connection terminal 14 together.

次いで、接合体16のセラミック枠体12で囲繞されたヒートシンク板11のキャビティ部13の底面には、セラミック枠体12の内壁とクリアランスを有して嵌合できるステンレス等からなる上治具17や、ヒートシンク板11との当接面が緩やかな曲率半径、例えば、2000mm程度の曲率半径の凸形状20を有する上治具17aが当接される。また、接合体16のヒートシンク板11の裏面には、ヒートシンク板11全体を包含して当接するステンレス等からなる下治具18や、ヒートシンク板11との当接面が緩やかな曲率半径、例えば、2000mm程度の曲率半径の凹形状21を有する下治具18aが当接される。そして、プレス機の基台上に下治具18、18aを載置し、上治具17、17aの上から押圧している。この押圧によって、ヒートシンク板11のキャビティ部13の底面は、ヒートシンク板の表面の僅かな突起や、表面に付着した小塊異物等が潰されて、平滑面19に仕上げられている。   Next, on the bottom surface of the cavity portion 13 of the heat sink plate 11 surrounded by the ceramic frame 12 of the joined body 16, an upper jig 17 made of stainless steel or the like that can be fitted with a clearance with the inner wall of the ceramic frame 12, The upper jig 17a having a convex shape 20 having a gentle curvature radius, for example, about 2000 mm, is brought into contact with the heat sink plate 11. Further, on the back surface of the heat sink plate 11 of the joined body 16, the lower jig 18 made of stainless steel or the like that includes the entire heat sink plate 11 and the contact surface with the heat sink plate 11 have a gentle curvature radius, for example, A lower jig 18a having a concave shape 21 having a radius of curvature of about 2000 mm is brought into contact. Then, the lower jigs 18 and 18a are placed on the base of the press machine and pressed from above the upper jigs 17 and 17a. By this pressing, the bottom surface of the cavity portion 13 of the heat sink plate 11 is finished to a smooth surface 19 by crushing slight protrusions on the surface of the heat sink plate, small lump foreign matter attached to the surface, and the like.

次いで、接合体16には、Niめっき上にAuめっきが施される。上記のようにして形成された接合体16は、高周波用の半導体素子や、コンデンサ等の電子部品22を実装するために、セラミック枠体12の開口部とヒートシンク板11の一方の主面とで形成されているキャビティ部13を有し、ヒートシンク板11の他方の主面が放熱用の基台27に当接できる高放熱型電子部品収納用パッケージ10として形成されている。   Next, Au plating is applied to the joined body 16 on the Ni plating. The joined body 16 formed as described above is formed between the opening of the ceramic frame 12 and one main surface of the heat sink plate 11 in order to mount a high-frequency semiconductor element or an electronic component 22 such as a capacitor. The heat sink plate 11 is formed as a high heat radiation type electronic component storage package 10 having a formed cavity portion 13 and having the other main surface of the heat sink plate 11 in contact with a heat radiation base 27.

本発明の高周波用パッケージは、シリコンや、ガリウム砒素電界効果トランジスタ等の高周波、高出力で放熱性を考慮した薄型の半導体素子や、コンデンサ等の電子部品を実装し、例えば、RF(Radio Frequency)基地局用等のために用いることができる。   The high-frequency package of the present invention is mounted with a thin semiconductor element taking into consideration heat dissipation such as high frequency, high output such as silicon or gallium arsenide field effect transistor, and an electronic component such as a capacitor. For example, RF (Radio Frequency) It can be used for a base station or the like.

(A)、(B)はそれぞれ本発明の一実施の形態に係る高放熱型電子部品収納用パッケージの平面図、A−A’線縦断面図である。FIGS. 4A and 4B are a plan view and a longitudinal sectional view taken along line A-A ′ of a high heat dissipation electronic component storage package according to an embodiment of the present invention, respectively. (A)、(B)はそれぞれ同高放熱型電子部品収納用パッケージの変形例の説明図、他の変形例の説明図である。(A), (B) is explanatory drawing of the modification of the high heat dissipation type electronic component storage package, respectively, and explanatory drawing of another modification. (A)、(B)はそれぞれ同高放熱型電子部品収納用パッケージに電子部品が実装されて基台に取り付けられる説明図である。(A), (B) is explanatory drawing by which an electronic component is mounted in the same high heat dissipation type electronic component storage package, and is attached to a base. (A)、(B)はそれぞれ従来の高放熱型電子部品収納用パッケージの平面図、B−B’線縦断面図である。(A) and (B) are a plan view and a B-B ′ line longitudinal sectional view of a conventional high heat dissipation electronic component storage package, respectively.

符号の説明Explanation of symbols

10、10a、10b:高放熱型電子部品収納用パッケージ、11:ヒートシンク板、12:セラミック枠体、13:キャビティ部、14:外部接続端子、15:取付部、16:接合体、17、17a:上治具、18、18a:下治具、19:平滑面、20:凸形状、21:凹形状、22:電子部品、23:ボンディングワイヤ、24:蓋体、25:接着材、26:高周波用モジュール基板、27:基台、28:ねじ   10, 10a, 10b: High heat dissipation type electronic component storage package, 11: Heat sink plate, 12: Ceramic frame, 13: Cavity part, 14: External connection terminal, 15: Attachment part, 16: Joint, 17, 17a : Upper jig, 18, 18a: Lower jig, 19: Smooth surface, 20: Convex shape, 21: Concave shape, 22: Electronic component, 23: Bonding wire, 24: Lid, 25: Adhesive, 26: Module board for high frequency, 27: base, 28: screw

Claims (1)

電子部品からの発熱を放熱するための金属板からなるヒートシンク板にセラミック枠体がろう付け接合され、該セラミック枠体内の前記ヒートシンク板上に前記電子部品が載置される高放熱型電子部品収納用パッケージにおいて、
前記ヒートシンク板と前記セラミック枠体をAgCuろうで接合し、前記ヒートシンク板の表面にめっき被膜が施された後、前記セラミック枠体で囲繞された前記ヒートシンク板の前記電子部品が載置されるキャビティ部の底面に前記セラミック枠体の内壁とクリアランスを有して嵌合でき、前記ヒートシンク板との当接面が中心部で最大突出部となる曲率半径を有する凸形状からなる上治具を当接すると共に、前記ヒートシンク板の裏面全体を包含して該裏面との当接面が前記ヒートシンク板の裏面中心部で最大凹み部となる前記上治具の曲率半径と同じ曲率半径を有する凹形状からなる下治具を当接して前記ヒートシンク板が前記上治具と前記下治具を介して押圧されて、前記キャビティ部の底面が平滑面を有することを特徴とする高放熱型電子部品収納用パッケージ。
A highly radiating electronic component housing in which a ceramic frame is brazed and joined to a heat sink plate made of a metal plate for radiating heat generated from the electronic component, and the electronic component is placed on the heat sink plate in the ceramic frame In the package for
A cavity where the heat sink plate and the ceramic frame are joined with AgCu brazing , and a plating film is applied to the surface of the heat sink plate, and then the electronic component of the heat sink plate surrounded by the ceramic frame is placed An upper jig made of a convex shape having a radius of curvature at which the contact surface with the heat sink plate becomes the maximum protruding portion at the center is applied to the bottom surface of the portion with a clearance with the inner wall of the ceramic frame. while contact, concave shape having the same radius of curvature as the abutment surface is the upper tool radius of the maximum recess in the back surface center portion of the heat sink plate with the back surface to encompass the entire back surface of the heat sink plate the heat sink plate lower jig abuts consisting is pressed through the lower jig and said upper jig, high discharge bottom surface of the cavity is characterized by having a smooth surface Type electronic component storing package.
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