JP3826581B2 - 半導体基板および半導体基板の製造方法 - Google Patents
半導体基板および半導体基板の製造方法 Download PDFInfo
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- JP3826581B2 JP3826581B2 JP25886898A JP25886898A JP3826581B2 JP 3826581 B2 JP3826581 B2 JP 3826581B2 JP 25886898 A JP25886898 A JP 25886898A JP 25886898 A JP25886898 A JP 25886898A JP 3826581 B2 JP3826581 B2 JP 3826581B2
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- semiconductor substrate
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- 239000000758 substrate Substances 0.000 title claims description 80
- 239000004065 semiconductor Substances 0.000 title claims description 35
- 238000000034 method Methods 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000013078 crystal Substances 0.000 claims description 48
- 239000010409 thin film Substances 0.000 claims description 25
- 150000001875 compounds Chemical class 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 239000003870 refractory metal Substances 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 136
- 239000010408 film Substances 0.000 description 52
- 229910004298 SiO 2 Inorganic materials 0.000 description 23
- 230000007547 defect Effects 0.000 description 19
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 12
- 238000000206 photolithography Methods 0.000 description 9
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 239000002346 layers by function Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25886898A JP3826581B2 (ja) | 1998-08-06 | 1998-09-11 | 半導体基板および半導体基板の製造方法 |
| US09/369,148 US6368733B1 (en) | 1998-08-06 | 1999-08-05 | ELO semiconductor substrate |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22328198 | 1998-08-06 | ||
| JP10-223281 | 1998-08-06 | ||
| JP25886898A JP3826581B2 (ja) | 1998-08-06 | 1998-09-11 | 半導体基板および半導体基板の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000114178A JP2000114178A (ja) | 2000-04-21 |
| JP2000114178A5 JP2000114178A5 (enrdf_load_stackoverflow) | 2005-07-07 |
| JP3826581B2 true JP3826581B2 (ja) | 2006-09-27 |
Family
ID=26525376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25886898A Expired - Fee Related JP3826581B2 (ja) | 1998-08-06 | 1998-09-11 | 半導体基板および半導体基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3826581B2 (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6821805B1 (en) | 1999-10-06 | 2004-11-23 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device, semiconductor substrate, and manufacture method |
| JP4396816B2 (ja) | 2003-10-17 | 2010-01-13 | 日立電線株式会社 | Ｉｉｉ族窒化物半導体基板およびその製造方法 |
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1998
- 1998-09-11 JP JP25886898A patent/JP3826581B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000114178A (ja) | 2000-04-21 |
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