JP3823692B2 - 露光基板の製造方法及び電気光学装置の製造方法、並びに露光基板及び電気光学装置 - Google Patents
露光基板の製造方法及び電気光学装置の製造方法、並びに露光基板及び電気光学装置 Download PDFInfo
- Publication number
- JP3823692B2 JP3823692B2 JP2000176963A JP2000176963A JP3823692B2 JP 3823692 B2 JP3823692 B2 JP 3823692B2 JP 2000176963 A JP2000176963 A JP 2000176963A JP 2000176963 A JP2000176963 A JP 2000176963A JP 3823692 B2 JP3823692 B2 JP 3823692B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- exposure
- pattern
- length
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 260
- 238000004519 manufacturing process Methods 0.000 title claims description 40
- 238000011156 evaluation Methods 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 67
- 230000003287 optical effect Effects 0.000 claims description 33
- 230000002093 peripheral effect Effects 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000010408 film Substances 0.000 description 103
- 239000011229 interlayer Substances 0.000 description 36
- 239000010410 layer Substances 0.000 description 27
- 239000004973 liquid crystal related substance Substances 0.000 description 26
- 239000004065 semiconductor Substances 0.000 description 21
- 230000002950 deficient Effects 0.000 description 12
- 238000000206 photolithography Methods 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 230000005856 abnormality Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 239000003566 sealing material Substances 0.000 description 6
- 238000012790 confirmation Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000176963A JP3823692B2 (ja) | 2000-06-13 | 2000-06-13 | 露光基板の製造方法及び電気光学装置の製造方法、並びに露光基板及び電気光学装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000176963A JP3823692B2 (ja) | 2000-06-13 | 2000-06-13 | 露光基板の製造方法及び電気光学装置の製造方法、並びに露光基板及び電気光学装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001358050A JP2001358050A (ja) | 2001-12-26 |
| JP2001358050A5 JP2001358050A5 (https=) | 2004-12-24 |
| JP3823692B2 true JP3823692B2 (ja) | 2006-09-20 |
Family
ID=18678619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000176963A Expired - Fee Related JP3823692B2 (ja) | 2000-06-13 | 2000-06-13 | 露光基板の製造方法及び電気光学装置の製造方法、並びに露光基板及び電気光学装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3823692B2 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4617650B2 (ja) * | 2003-09-26 | 2011-01-26 | セイコーエプソン株式会社 | 多面取り用フォトマスク、電気光学装置の製造方法 |
-
2000
- 2000-06-13 JP JP2000176963A patent/JP3823692B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001358050A (ja) | 2001-12-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101183374B1 (ko) | 액정표시장치 및 그 제조방법 | |
| US9618816B2 (en) | Array substrate for liquid crystal display device and method of fabricating the same | |
| JP3375966B2 (ja) | 表示素子及びその製造方法 | |
| KR100539833B1 (ko) | 액정표시장치용 어레이 기판 및 그 제조방법 | |
| US8330924B2 (en) | Array substrate having first and second data lines for a liquid crystal display device and manufacturing method for the same | |
| US20050231671A1 (en) | Vertically aligned mode liquid crystal display | |
| US6982769B2 (en) | Substrate for liquid-crystal display device and fabrication method thereof | |
| US8466863B2 (en) | Liquid crystal display and method for manufacturing the same | |
| KR20070068918A (ko) | 액정표시장치 및 그 제조방법 | |
| JPH11153809A (ja) | フォトマスク及びアクティブ素子アレイ基板の製造方法 | |
| US6567135B1 (en) | Liquid crystal display device and method for fabricating the same | |
| US6856369B2 (en) | Electrode substrate for liquid crystal display panel, method of fabricating the electrode substrate, and liquid crystal display panel | |
| KR100324913B1 (ko) | 표시장치용 어레이 기판 및 그 제조방법 | |
| JP3823692B2 (ja) | 露光基板の製造方法及び電気光学装置の製造方法、並びに露光基板及び電気光学装置 | |
| US20060152655A1 (en) | Thin film transistor array panel | |
| KR100650400B1 (ko) | 액정 표시 장치용 어레이 기판 및 그의 제조 방법 | |
| US7608541B2 (en) | Method of forming fine pattern, liquid crystal display device having a fine pattern and fabricating method thereof | |
| US7898641B2 (en) | Production process of a display device, and a display device | |
| US8435722B2 (en) | Method for fabricating liquid crystal display device | |
| KR20050101578A (ko) | 표시장치용 기판, 표시장치의 제조 방법 및 이를 제조하기위한 노광 시스템 | |
| KR20070075159A (ko) | 표시장치 및 그 제조방법 | |
| KR100996213B1 (ko) | 액정 표시 장치 및 그 제조 방법 | |
| KR20050100416A (ko) | 표시장치용 기판 및 기판 노광 방법 | |
| KR20060136045A (ko) | 액정표시장치 및 그 제조방법 | |
| KR20010111821A (ko) | 반도체 소자의 제조 방법 및 이를 이용한 액정 표시장치용 박막 트랜지스터 기판의 제조 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040116 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040116 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20051006 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20051011 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20051107 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20060606 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20060619 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100707 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110707 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110707 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120707 Year of fee payment: 6 |
|
| LAPS | Cancellation because of no payment of annual fees |