JP3820427B2 - 集束イオンビーム装置 - Google Patents

集束イオンビーム装置 Download PDF

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Publication number
JP3820427B2
JP3820427B2 JP2002239396A JP2002239396A JP3820427B2 JP 3820427 B2 JP3820427 B2 JP 3820427B2 JP 2002239396 A JP2002239396 A JP 2002239396A JP 2002239396 A JP2002239396 A JP 2002239396A JP 3820427 B2 JP3820427 B2 JP 3820427B2
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Japan
Prior art keywords
sample
ion beam
focused ion
sample stage
processing
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Expired - Fee Related
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JP2002239396A
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Japanese (ja)
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JP2003162973A5 (enExample
JP2003162973A (ja
Inventor
利昭 藤井
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Hitachi High Tech Science Corp
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SII NanoTechnology Inc
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Priority to JP2002239396A priority Critical patent/JP3820427B2/ja
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Publication of JP2003162973A5 publication Critical patent/JP2003162973A5/ja
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JP2002239396A 2002-08-20 2002-08-20 集束イオンビーム装置 Expired - Fee Related JP3820427B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002239396A JP3820427B2 (ja) 2002-08-20 2002-08-20 集束イオンビーム装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002239396A JP3820427B2 (ja) 2002-08-20 2002-08-20 集束イオンビーム装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9334657A Division JPH11167894A (ja) 1997-12-04 1997-12-04 集束イオンビーム加工方法

Publications (3)

Publication Number Publication Date
JP2003162973A JP2003162973A (ja) 2003-06-06
JP2003162973A5 JP2003162973A5 (enExample) 2005-07-14
JP3820427B2 true JP3820427B2 (ja) 2006-09-13

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ID=19196439

Family Applications (1)

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JP2002239396A Expired - Fee Related JP3820427B2 (ja) 2002-08-20 2002-08-20 集束イオンビーム装置

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JP (1) JP3820427B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102606686B1 (ko) * 2018-11-12 2023-11-29 주식회사 히타치하이테크 화상 형성 방법 및 화상 형성 시스템

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JP2003162973A (ja) 2003-06-06

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