JP3781002B2 - Tape carrier for semiconductor device and method for manufacturing tape carrier for semiconductor device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device tape carrier for mounting a semiconductor chip to form a semiconductor package, and particularly to a semiconductor device tape carrier having a bendability called COF (Chip on Film) and manufacturing of the semiconductor device tape carrier. Regarding the method .
[0002]
[Prior art]
In the manufacturing process of a TAB (Tape Automated Bonding) tape, which is a conventional tape carrier for a semiconductor device having a bending property called COF, when the thickness of the insulating film with copper having a two-layer structure is reduced to about 40 μm, a perforation hole ( At the time of transport to the next process by supporting the feed holes), wrinkles and partial creases occur in the insulating film, making it difficult to transport the TAB tape.
[0003]
Therefore, as shown in the cross-sectional view in the width direction of the TAB tape in FIG. 8A, in the configuration in which the copper layer 1 serving as the copper wiring pattern layer is formed on the insulating film 2, the lower surface of the insulating film 2 is formed. A reinforcing tape 3 is attached. Next, a photoresist (not shown) is coated and baked, followed by exposure and development, and etching of the copper layer 1 to form a copper wiring pattern layer 1a as shown in FIG. 8B. Then, tin plating for LSI flip chip connection is performed, the photoresist is removed, and then the tin plating is baked to form a tin plating layer 4 as shown in FIG. The solder resist 5 is applied by printing, and the solder resist 5 is cured by heat treatment. That is, in order to eliminate the wrinkles and partial breakage of the insulating film 2, the reinforcement of the TAB tape was attempted by attaching the reinforcing tape 3. (For example, refer to Patent Document 1).
[0004]
[Patent Document 1]
Japanese Patent Laid-Open No. 2000-223795
[Problems to be solved by the invention]
However, in the conventional TAB tape, as shown in FIG. 9A, when the copper wiring pattern layer 1a is formed by etching the copper layer 1, a part of the copper layer 1 is lost. The difference in the amount of thermal expansion and contraction between the layers causes the balance of the forces acting between the layers to be lost, causing the TAB tape to warp. When warping occurs in this way, there is a problem that conveyance to the next process becomes difficult and the yield of products decreases.
[0006]
Further, as shown in FIG. 9B, a thermosetting solder resist 5 is formed on the copper wiring pattern layer 1a and the insulating film 2 via the tin plating layer 4, and the solder resist 5 is cured by heat treatment. When it is made to warp, there is a problem that warp due to heat occurs, making it difficult to convey to the next process, and the work efficiency of the TAB tape processing in the next process and the dimensional quality of the TAB tape are lowered.
[0007]
The present invention has been made in view of the above points, and by eliminating the warp at the time of forming the copper wiring pattern layer and the warp at the time of thermosetting of the thermosetting solder resist, the yield at the time of transporting the product to the next process. An object of the present invention is to provide a tape carrier for a semiconductor device that can improve the working efficiency of product processing in the next process and the dimensional quality of the product.
[0008]
[Means for Solving the Problems]
In order to solve the above problems, a tape carrier for a semiconductor device according to the present invention is a tape carrier for a semiconductor device in which a copper layer for forming a copper wiring pattern is formed on an insulating film, on the lower surface of the insulating film. has bonded to reinforcing tapes through-hole formed in advance, the holes, as well are arrayed substantially on a straight line along the tape width, the holes, the copper by patterning of the copper wiring The reinforcing tape is disposed in a region below or near the region where a part of the layer disappears, and the reinforcing tape has heat resistance that does not deform at 180 ° C. × 2 hours or more .
[0009]
A method of manufacturing a tape carrier for a semiconductor device according to the present invention includes forming a copper wiring pattern by etching a copper layer formed on an insulating film, and forming a thermosetting solder resist on the copper wiring pattern. In the method for manufacturing a tape carrier, when the reinforcing tape having a through hole formed in advance is bonded to the lower surface of the insulating film, a plurality of the holes are arranged on a substantially straight line along the tape width, The hole is disposed below or near a region where the copper layer is partially removed by patterning of the copper wiring, and the reinforcing tape has heat resistance that does not deform at 180 ° C. for 2 hours or more. It is characterized by that.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0011]
(Embodiment)
1A and 1B show the structure of a TAB tape according to an embodiment of the present invention, where FIG. 1A is a partial plan view between perforation holes of a TAB tape, and FIG. 1B is a width direction between perforation holes of a TAB tape. It is sectional drawing at the time of cut | disconnecting.
[0012]
This TAB tape is characterized in that, in the configuration in which the copper layer 1 is formed on the insulating film 2, the reinforcing tape 6 in which a plurality of through holes 6a are formed is attached to the lower surface of the insulating film 2. Have. However, FIG. 1 shows a portion inside a perforation hole provided at both ends of the TAB tape, that is, a portion of the tape width B1 used for actually mounting a semiconductor chip to constitute a semiconductor package. .
[0013]
The holes 6a are formed at the center of the tape width B1 and at positions on both sides that are a predetermined distance away from the center, and are formed at predetermined intervals along the longitudinal direction of the TAB tape in such an arrangement in the width B1 direction. Has been. Each hole 6 a is formed in advance in the reinforcing tape 6.
[0014]
By sticking the reinforcing tape 6 in which the holes 6 a are formed in this manner to the lower surface of the insulating film 1, the warping of the TAB tape, which has been a problem in the past, can be eliminated. The reason for this will be explained.
[0015]
As shown in FIG. 2, generally, the change in curvature 1 / R of the cantilever type bimetal obtained by bonding the two metal plates 11 and 12 can be expressed by 1 / R≈2D / L ² . However, D is the amount of tip deflection, and L is the length of the bent portion.
[0016]
As shown to Fig.3 (a), in the structure which affixed the copper layer 1 and the insulating film 2, thickness ratio of the copper layer 1 (it makes index 1) and the insulating film 2 (it makes index 2) is set. If m = h1 / h2, the elastic modulus ratio is n = E1 / E2, and the total thickness is h = h1 + h2, the change in curvature is
1 / R = {6 (α1-α2) (1 + m) ² A} / h {3 (1 + m) ² + (1 + mn) (m ² + 1 / mn)}
It becomes. However, (alpha) is a thermal expansion coefficient and A is a thermal contraction rate.
[0017]
Here, it is assumed that the copper layer 1 has a thickness h = 8 μm, an elastic modulus E = 80000, a thermal expansion coefficient α = 16 ppm / ° C., and a thermal contraction rate A = 0%. Also, Kapton EN made by Sumitomo Metal Mining was used for the insulating film 2 and the Kapton EN layer 2 had a thickness h = 38 μm, an elastic modulus E = 5000, a thermal expansion coefficient α = 16 ppm / ° C., and a thermal contraction rate A = −. Suppose that it is 0.02%.
[0018]
In this case, the distortion thermal stress σ due to thermal contraction of both 1 and 2 is
σ1 = E1 (ε−A1 × B)
σ2 = E2 (ε−A2 × B)
It becomes. Where ε is the amount of thermal expansion and B is the tape width.
[0019]
As shown in FIG. 3B, in the case of the above characteristics, since the Kapton EN layer 2 is extremely small with a heat shrinkage ratio A = −0.02%, it shrinks by heating and slightly warps.
[0020]
On the other hand, as shown in FIG. 4A, when the reinforcing tape 16 having no holes is attached to the lower surface of the Kapton EN layer 2, the reinforcing tape 16 has a thickness h = 57 μm and an elastic modulus E. = 4000, coefficient of thermal expansion α = 17 ppm / ° C., and thermal contraction rate A = −2.0%. However, in this case, since the characteristics of the copper layer 1 and the Kapton EN layer 2 which are the same as those described above are close, they are regarded as an integral one. In this case, as shown in FIG. 4B, since the reinforcing tape 16 has a large thermal shrinkage ratio A = −2.0%, it shrinks by heating and warps excessively.
[0021]
In this case, if the reinforcing tape 6 shown in FIG. 1 is the reinforcing tape 16 without the holes 6a, the actual width B2 of the reinforcing tape is the same as the tape width B1, so that the warp (curvature ratio) of the entire TAB tape. ) Is B2 / B1 = 1.0.
[0022]
Further, in the reinforcing tape 6 having the hole 6a shown in FIG. 1, the reinforcing tape substantial width B2 = B2a + B2b + B2c + B2d obtained by subtracting the length of the hole 6a from the tape width B1 on a substantially straight line in the tape width direction is: If it is 50% of the total, the warp of the entire TAB tape is as small as B2 / B1 = 0.5.
[0023]
Further, assuming that the reinforcing tape substantial width B2 is 40% of the whole, the warp of the entire TAB tape is as small as B2 / B1 = 0.4. When the reinforcing tape substantial width B2 is 20% of the whole, the warp of the entire TAB tape is further reduced to B2 / B1 = 0.2.
[0024]
Therefore, as shown in FIG. 5A, even when a part of the copper layer 1 disappears when the copper layer 1 is etched to form the copper wiring pattern layer 1a, below or below the lost region. If there is a hole 6a in the vicinity area, it is the same as the absence of the reinforcing tape 6 below or in the vicinity of the lower area. Therefore, the balance of the forces acting between the layers of the TAB tape is not lost, and the TAB tape is warped. Will not occur.
[0025]
Further, as shown in FIG. 5B, a thermosetting solder resist 5 is formed on the copper wiring pattern layer 1a and the insulating film 2 via the tin plating layer 4, and the solder resist 5 is cured by heat treatment. Conventionally, warping due to heat has occurred. However, in the present embodiment, as described above, since the hole 6a exists in the region below or near the region where the copper layer 1 has been partially removed by etching, the balance of the forces acting between the layers of the TAB tape is high. Will not collapse, and the TAB tape will not warp.
[0026]
Therefore, the yield when the TAB tape is conveyed to the next process can be improved, and the work efficiency of the TAB tape processing in the next process and the dimensional quality of the TAB tape can be improved.
[0027]
Moreover, it is preferable that the reinforcement tape 6 has heat resistance which does not deform | transform at 180 degreeC x 2 hours or more. This is because the solder resist 5 can withstand the heat treatment.
[0028]
The thickness of the copper layer 1 is preferably 0.2 μm to 25 μm. The reason for this is that, in the insulating film 2 with Cu having a two-layer structure, the thickness of the copper layer 1 of 0.2 μm is the minimum film thickness by sputtering. Further, the thickness of 25 μm is the limit for forming a fine wiring pitch of 60 μm (copper wiring width: 30 μm, space: 30 μm). This is because when the pitch is 25 μm or more, when forming a fine wiring pitch of 60 μm, defects such as chipping, thinning, and thickening of the wiring are few and it becomes impossible to form with high yield.
[0029]
Next, a first embodiment in which a TAB tape is actually formed according to such a principle will be described.
[0030]
Sumitomo Metal Mining 38 μm thick Kapton EN is used for the insulating film 2, 8 μm thick copper plated product is used for the copper layer 1, and FANUC 50 μm thick NT-50 (product name) is used for the reinforcing tape 6. Was used. Each width is assumed to be 540 mm.
[0031]
First, using the mold for the reinforcing tape NT-50, the holes 6a were continuously formed as described above. Next, after a copper-plated product was bonded to Kapton EN by a roll laminator, reinforcing tape NT-50 having holes 6a was bonded to Kapton EN and cut to a width of 105 mm to be used.
[0032]
Next, a perforation hole is opened, a photoresist is coated and baked, followed by exposure and development. By etching the copper plating product, a copper wiring pattern layer 1a is formed, and tin plating for flip chip connection of LSI is performed. gave. In the etching, the TAB tape did not warp.
[0033]
Here, for comparison, the same processing was performed using the reinforcing tape NT-50 having no holes 6a. As a result, the TAB tape was slightly warped, but could be conveyed to the next step.
[0034]
Next, after removing the photoresist, the tin plating is baked to form a tin plating layer 4, and further, a thermosetting solder resist 5 is applied by printing, and the solder resist 5 is heat treated (150 ° C. × 1 hour). Cured by Even in this heat treatment, the TAB tape did not warp. As a result, the yield when transporting the TAB tape to the next process can be improved, and the work efficiency of the TAB tape processing in the next process and the dimensional quality of the TAB tape can be improved.
[0035]
On the other hand, in the case of using the reinforcing tape NT-50 having no hole 6a for comparison, the tube was deformed and could not be conveyed.
[0036]
Next, as a second embodiment, 25 μm Iupirix S made by Sumitomo Metal Mining is used for the insulating film 2, a copper plated product having a thickness of 8 μm is used for the copper layer 1, and 50 μm made by Kawamura Sangyo is used for the reinforcing tape 6. The heat-resistant backing product name KT-508ZZ was used. Each width is assumed to be 540 mm.
[0037]
First, using the mold for the reinforcing tape KT-508ZZ, the holes 6a were continuously formed as described above. Next, after a copper-plated product was bonded to Upilex S by a roll laminator, reinforcing tape KT-508ZZ having holes 6a was attached to Upilex S and cut to a width of 105 mm to be used.
[0038]
Next, a perforation hole was opened, a photoresist was coated and baked, and then exposure and development were performed. By etching the copper plating product, a copper wiring pattern layer 1a was formed, and tin plating was performed. In the etching, the TAB tape did not warp.
[0039]
Here, for comparison, as a result of performing the same processing using the reinforcing tape NT-50 having no holes 6a, warping occurred in the TAB tape, and the conveyance to the next process was adversely affected.
[0040]
Next, after removing the photoresist, the tin plating is baked to form a tin plating layer 4, and further, a thermosetting solder resist 5 is applied by printing, and the solder resist 5 is heat treated (150 ° C. × 1 hour). Cured by Even in this heat treatment, the TAB tape did not warp. As a result, the yield when transporting the TAB tape to the next process can be improved, and the work efficiency of the TAB tape processing in the next process and the dimensional quality of the TAB tape can be improved.
[0041]
On the other hand, in the case of using the reinforcing tape KT-508ZZ without the hole 6a for comparison, deformation occurred in a cylindrical shape, and conveyance was impossible.
[0042]
As another application example, as shown in FIG. 6, the same effect as in the above embodiment can be obtained even when a reinforcing tape 6 in which holes 6 b and 6 c having large and small elliptical diameters are randomly formed is used.
[0043]
Further, as shown in FIGS. 7A and 7B, when the copper wiring pattern layer 1a is left in the vicinity of the perforation hole 8 of the TAB tape, as shown in FIGS. 7C and 7D, the copper wiring In the case where the pattern layer 1a is not left, the same effect as in the above embodiment can be obtained in any case.
[0044]
【The invention's effect】
As described above, in the present invention , a reinforcing tape having a through hole formed in advance is bonded to the lower surface of the insulating film, and a plurality of the holes are arranged on a substantially straight line along the tape width. And the hole is disposed in a region below or near the region where the copper layer is partially removed by patterning of the copper wiring, and the reinforcing tape is heat resistant so as not to be deformed at 180 ° C. × 2 hours or more. A reinforcing tape having a property was bonded.
[0045]
As a result, even if a portion of the copper layer disappears when the copper wiring pattern is formed by etching the copper layer, if there is a hole in the region below or below the lost region, the region below or below the region is removed. Since this is the same as the absence of the reinforcing tape, the balance of the forces acting between the layers of the tape is not lost, and the tape is not warped. In addition, when a thermosetting solder resist is formed on a copper wiring pattern and an insulating film via a tin plating layer, and this solder resist is cured by heat treatment, warping due to heat has conventionally occurred. In the invention, since there is a hole below or near the region where the copper layer is partially removed, the balance of the force acting between the layers of the tape is not broken by heat, and the tape is not warped. Therefore, the yield at the time of transporting the tape to the next process can be improved, and the work efficiency of the tape processing in the next process and the dimensional quality of the tape can be improved.
[Brief description of the drawings]
FIG. 1 shows a configuration of a TAB tape according to an embodiment of the present invention, where (a) is a partial plan view between perforation holes of the TAB tape, and (b) is a width direction between perforation holes of the TAB tape. It is sectional drawing at the time of cut | disconnecting.
FIG. 2 is a diagram for explaining a change in curvature of a cantilever type bimetal obtained by bonding two general metal plates.
FIG. 3 is a view for explaining warpage of a TAB tape when a copper layer is formed on an insulating film.
FIG. 4 is a view for explaining warpage of a TAB tape when a reinforcing tape is bonded under an insulating film on which a copper layer is formed.
5A is a cross-sectional view when a reinforcing tape having a plurality of holes is bonded to an insulating film on which a copper wiring pattern layer is formed, and FIG. 5B is a cross-sectional view of the structure of FIG. It is sectional drawing at the time of forming a tin plating layer on a wiring pattern layer and forming a thermosetting solder resist thereon.
FIG. 6 is a diagram showing a configuration of a TAB tape in which a reinforcing tape in which large and small elliptical holes are formed is bonded under an insulating film.
FIGS. 7A and 7B are diagrams showing a case where a copper layer is left in the vicinity of a perforation hole and FIGS. 7C and 7D are not left.
FIG. 8 is a cross-sectional view showing a configuration at the time of manufacturing a TAB tape to which a conventional reinforcing tape is attached.
FIG. 9 is a view for explaining warpage of the TAB tape at the time of conventional copper wiring pattern layer formation and thermosetting of a thermosetting solder resist.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Copper layer 1a Copper wiring pattern layer 2 Insulating film 4 Tin plating layer 5 Thermosetting type solder resist 3, 6, 16 Reinforcement tape 6a, 6b, 6c Hole 8 Perforation hole 11, 12 Metal plate

Claims (2)

In a tape carrier for a semiconductor device in which a copper layer for forming a copper wiring pattern is formed on an insulating film, a reinforcing tape in which a through-hole is previously formed is bonded to the lower surface of the insulating film , A plurality of holes are arranged on a substantially straight line along the tape width, and the holes are arranged in a region below or below the region where the copper layer is partially removed by patterning of the copper wiring. And a tape carrier for a semiconductor device , wherein the reinforcing tape has heat resistance that does not deform at 180 ° C. for 2 hours or more . In a method for manufacturing a tape carrier for a semiconductor device, a copper wiring pattern is formed by etching a copper layer formed on an insulating film, and a thermosetting solder resist is formed on the copper wiring pattern. In addition, when attaching a reinforcing tape having a through hole formed in advance, a plurality of the holes are arranged on a substantially straight line along the tape width, and the holes are formed by patterning the copper wiring. A method of manufacturing a tape carrier for a semiconductor device, wherein the reinforcing tape is disposed in a region below or near a region where a part of the layer disappears, and the reinforcing tape has heat resistance that does not deform at 180 ° C. for 2 hours or more. .

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