JP3766235B2 - パタン形成方法および半導体装置の製造方法 - Google Patents
パタン形成方法および半導体装置の製造方法 Download PDFInfo
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- JP3766235B2 JP3766235B2 JP16480799A JP16480799A JP3766235B2 JP 3766235 B2 JP3766235 B2 JP 3766235B2 JP 16480799 A JP16480799 A JP 16480799A JP 16480799 A JP16480799 A JP 16480799A JP 3766235 B2 JP3766235 B2 JP 3766235B2
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- 150000001875 compounds Chemical class 0.000 claims description 37
- 230000005855 radiation Effects 0.000 claims description 30
- 239000000126 substance Substances 0.000 claims description 29
- 239000011248 coating agent Substances 0.000 claims description 25
- 238000000576 coating method Methods 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 25
- 239000000203 mixture Substances 0.000 claims description 21
- 238000001312 dry etching Methods 0.000 claims description 15
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- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical group [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
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- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 10
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
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- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
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- MIBQYWIOHFTKHD-UHFFFAOYSA-N adamantane-1-carbonyl chloride Chemical compound C1C(C2)CC3CC2CC1(C(=O)Cl)C3 MIBQYWIOHFTKHD-UHFFFAOYSA-N 0.000 description 2
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- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
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- FUGYGGDSWSUORM-UHFFFAOYSA-N 4-hydroxystyrene Chemical compound OC1=CC=C(C=C)C=C1 FUGYGGDSWSUORM-UHFFFAOYSA-N 0.000 description 1
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- 238000001393 microlithography Methods 0.000 description 1
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- 150000004767 nitrides Chemical class 0.000 description 1
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- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
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- SXYFKXOFMCIXQW-UHFFFAOYSA-N propanedioyl dichloride Chemical compound ClC(=O)CC(Cl)=O SXYFKXOFMCIXQW-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
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- 238000007086 side reaction Methods 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
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- 229910052682 stishovite Inorganic materials 0.000 description 1
- 150000003505 terpenes Chemical group 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- GAQUIYRRYYKVMJ-UHFFFAOYSA-M tetrahydroxyazanium;hydroxide Chemical compound [OH-].O[N+](O)(O)O GAQUIYRRYYKVMJ-UHFFFAOYSA-M 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- ILWRPSCZWQJDMK-UHFFFAOYSA-N triethylazanium;chloride Chemical compound Cl.CCN(CC)CC ILWRPSCZWQJDMK-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
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Images
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16480799A JP3766235B2 (ja) | 1999-06-11 | 1999-06-11 | パタン形成方法および半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16480799A JP3766235B2 (ja) | 1999-06-11 | 1999-06-11 | パタン形成方法および半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000352821A JP2000352821A (ja) | 2000-12-19 |
| JP2000352821A5 JP2000352821A5 (enrdf_load_stackoverflow) | 2004-08-19 |
| JP3766235B2 true JP3766235B2 (ja) | 2006-04-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16480799A Expired - Fee Related JP3766235B2 (ja) | 1999-06-11 | 1999-06-11 | パタン形成方法および半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3766235B2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7642145B2 (en) * | 2002-07-30 | 2010-01-05 | Hitachi, Ltd. | Method for producing electronic device |
| JP4627536B2 (ja) * | 2007-03-27 | 2011-02-09 | 株式会社日立製作所 | 化合物、ネガ型レジスト組成物およびパターン形成方法 |
| KR101156489B1 (ko) * | 2008-12-02 | 2012-06-18 | 제일모직주식회사 | 반사방지 하드마스크 조성물 |
-
1999
- 1999-06-11 JP JP16480799A patent/JP3766235B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP2000352821A (ja) | 2000-12-19 |
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