JP3760967B2 - Active matrix substrate, manufacturing method thereof, and liquid crystal display panel - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an active matrix substrate using a two-terminal nonlinear element as a switching element, a method for manufacturing the same, and a liquid crystal display panel.
[0002]
[Background]
In recent years, for example, as described in Japanese Patent Application Laid-Open No. 5-341325, in order to meet the demand for an improvement in the area ratio of all the pixels in the aperture ratio, that is, the area where light transmission or reflection of the liquid crystal panel display unit is controlled. An interlayer insulating film is provided on the surface of the substrate on which the wiring electrode and the two-terminal nonlinear element are formed without forming the wiring electrode, the two-terminal nonlinear element and the pixel electrode on the same surface of the substrate, and the interlayer insulation is provided. A liquid crystal display panel composed of an active matrix substrate having a pixel electrode formed on a film has been proposed.
[0003]
When the active matrix substrate has this structure, it is possible to overlap the wiring electrode and the transparent pixel electrode in the film thickness direction of the substrate, and the aperture ratio can be improved. However, in this substrate, since light leaks from the gaps between the pixel electrodes, a reduction in contrast cannot be avoided.
[0004]
[Problems to be solved by the invention]
An object of the present invention is to provide an active matrix substrate having a high aperture ratio and an improved contrast, a method for manufacturing the same, and a liquid crystal display panel.
[0005]
[Means for Solving the Problems]
That is, the active matrix substrate of the present invention is
substrate,
Wiring electrodes arranged in a predetermined pattern on the substrate;
A line-shaped light shielding layer disposed along a direction intersecting with the wiring electrode, and at least one end of which is electrically separated from at least one of the adjacent first wiring electrode and second wiring electrode;
A two-terminal nonlinear element having a first conductive film, an insulating film, and a second conductive film stacked on the substrate and connected to the wiring electrode;
An interlayer insulating film provided on a surface of the substrate on which the wiring electrode, the light shielding layer, and the two-terminal nonlinear element are formed;
A pixel electrode formed in a predetermined pattern on the interlayer insulating film, and a contact portion for connecting the two-terminal nonlinear element and the pixel electrode via a contact hole formed in the interlayer insulating film;
Including
The wiring electrode and the light shielding layer have a portion facing an end portion of the pixel electrode through the interlayer insulating film in a thickness direction of the substrate.
[0006]
In the active matrix substrate of the present invention, an interlayer insulating film is provided on the surface of the substrate on which the wiring electrode and the light shielding layer are formed, and the pixel electrode is formed on this interlayer insulating film. The pattern of the pixel electrode can be set without any change. In other words, by interposing the interlayer insulating film, the wiring electrode and the light shielding layer can be overlapped with the end portion of the pixel electrode, so that the area of the region for controlling the transmission or reflection of light can be increased. it can. As a result, a high aperture ratio can be achieved. Further, not only the light shielding layer but also the wiring electrode plays a role of shielding light, and the wiring electrode and the light shielding layer overlap with the end portion (outer peripheral portion) of the pixel electrode in a plan view, that is, in the thickness direction of the substrate. Light can be suppressed, and as a result, the contrast can be increased.
[0007]
The light shielding layer may be formed of either an insulator or a conductor as long as it has a light shielding function, but for simplification of the process, at least one of the first conductive film and the second conductive film is used. It is desirable to form in the same process. When the light shielding layer is formed in the same process as the first conductive film or the second conductive film, when one of the adjacent wiring electrodes is the first wiring electrode and the other is the second wiring electrode, The light shielding layer has one end continuous with the first wiring electrode and the other end electrically separated from the second wiring electrode. Thus, the first wiring electrode and the second wiring electrode are not electrically connected, and a short circuit between the first wiring electrode and the second wiring electrode can be prevented. In this case, the light shielding layer may be configured to be electrically connected to the wiring electrode and connected to one terminal of the two-terminal nonlinear element.
[0008]
In the active matrix substrate of the present invention, the two-terminal nonlinear element may be directly connected to the wiring electrode. In this case, one end of the light shielding layer is connected to the first wiring electrode, the other end is electrically separated from the second wiring electrode, and the other end is as close as possible to the second wiring electrode. Preferably it is provided. As a result, light leakage from the periphery of the pixel region can be more reliably suppressed and high contrast can be obtained.
[0009]
The manufacturing method of the active matrix substrate according to the present invention includes:
(A) forming a first conductive film constituting a two-terminal nonlinear element on a substrate;
(B) forming an insulating film on the first conductive film;
(C) forming a second conductive film on the insulating film;
(D) forming a wiring electrode;
(E) A line-shaped light shielding layer that is disposed along a direction intersecting the wiring electrode and at least one end is electrically separated from at least one of the adjacent first wiring electrode and second wiring electrode. Forming step,
(F) forming an interlayer insulating film on the surface of the substrate on which the wiring electrode, the light shielding layer, and the two-terminal nonlinear element are formed;
(G) forming a contact hole in the interlayer insulating film;
(H) forming a pixel electrode in a predetermined pattern on the interlayer insulating film, and forming a contact portion for connecting the two-terminal nonlinear element and the pixel electrode through the contact hole; Including
At least the step (a) and the step (e) are performed in the same step.
[0010]
According to this manufacturing method, since the first conductive film and the light shielding layer can be formed in the same process, the manufacturing process can be simplified.
[0011]
In addition, a method for manufacturing an active matrix substrate according to the present invention includes:
(A) forming a first conductive film constituting a two-terminal nonlinear element on a substrate;
(B) forming an insulating film on the first conductive film;
(C) forming a second conductive film on the insulating film;
(D) forming a wiring electrode;
(E) A line-shaped light shielding layer that is disposed along a direction intersecting the wiring electrode and at least one end is electrically separated from at least one of the adjacent first wiring electrode and second wiring electrode. Forming step,
(F) forming an interlayer insulating film on the surface of the substrate on which the wiring electrode, the light shielding layer, and the two-terminal nonlinear element are formed;
(G) forming a contact hole in the interlayer insulating film;
(H) forming a pixel electrode in a predetermined pattern on the interlayer insulating film, and forming a contact portion connecting the two-terminal nonlinear element and the pixel electrode through the contact hole; Including
At least the step (c) and the step (e) may be performed in the same step.
[0012]
According to this manufacturing method, since the second conductive film and the light shielding layer can be formed at the same time, the manufacturing process can be simplified.
[0013]
Furthermore, the liquid crystal display panel of the present invention is
The active matrix substrate according to claim 1,
A counter substrate provided with a wiring electrode at a position facing the pixel electrode of the active matrix substrate, and a liquid crystal layer sealed between the active matrix substrate and the counter substrate,
It is characterized by including.
[0014]
According to the liquid crystal display panel, high-contrast display with high contrast is possible, and it can be applied to a wide range of applications.
[0015]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
[0016]
First embodiment (active matrix substrate)
A first embodiment of an active matrix substrate as an example of the present invention will be described with reference to FIGS. FIG. 1 is a plan view schematically showing a part of the structure of the active matrix substrate, FIG. 2 is a cross-sectional view schematically showing a portion along the line AA in FIG. 1, and FIG. FIG. 2 is a cross-sectional view schematically showing a portion along the line BB in FIG. 1.
[0017]
The active matrix substrate 100 includes an insulating and transparent substrate, such as a substrate 30 made of glass or plastic, an insulating film 31 formed on the surface of the substrate 30, and a predetermined pattern on the insulating film 31. The wiring electrode 48 formed, the two-terminal nonlinear element 40 having a so-called back-to-back structure laminated on the insulating film 31, and the direction intersecting the wiring electrode 48. And a light shielding layer 52 disposed in a row. Further, the active matrix substrate 100 includes an interlayer insulating film 20 provided on the surface of the insulating film 31 on which the wiring electrode 48, the light shielding layer 52, and the two-terminal nonlinear element 40 are formed, and a predetermined thickness on the interlayer insulating film 20. And a contact portion 24 that connects the pixel electrode 54 and the two-terminal nonlinear element 40 via the contact hole 22 formed in the interlayer insulating film 20.
[0018]
The wiring electrode 48 (48a, 48b) is composed of a first conductive film 482, an insulating film 484 and a second insulating film 486, which are stacked on the insulating film 31, as shown in an enlarged view in FIG. Has been. In the wiring electrode 48, the first conductive film 482 functions as a wiring electrode when the first conductive film 42 of the two-terminal nonlinear element 40 is anodized. The wiring electrode 48 is formed in the same process as the two-terminal nonlinear element 40.
[0019]
Assuming that one of the two adjacent wiring electrodes 48 is the first wiring electrode 48a and the other wiring electrode is 48b, in the example shown in FIGS. 1 to 3, one end of the light shielding layer 52 is the first wiring electrode. The second conductive film 486 is electrically connected to the second conductive film 486, and the other end is separated from the second wiring electrode 48b. The light shielding layer 52 is formed by the same process as the second conductive film 486 of the wiring electrode 48 and the second conductive film 46 a of the two-terminal nonlinear element 40. The light shielding layer is not limited to this as long as it has conductivity, and may be composed of the first conductive film and the insulating film, or the first conductive film, the insulating film, and the second film similar to the wiring electrode 48. You may be comprised from the electrically conductive film.
[0020]
As shown in FIGS. 1 and 2, the two-terminal nonlinear element 40 includes a first conductive film 42, an insulating film 44 formed on the surface of the first conductive film 42, and the insulating film 44. It is composed of second conductive films 46a and 46b formed on the surface and spaced apart from each other. The first conductive film 42, the insulating film 44, and the one second conductive film 46a constitute a first two-terminal nonlinear element 40a, and the first conductive film 42, the insulating film 44, and the other second conductive film 46a. A second two-terminal nonlinear element 40b is configured from the conductive film 46b. In this embodiment, the first two-terminal nonlinear element 40a and the second two-terminal nonlinear element 40b are connected in series with opposite polarities.
[0021]
The two-terminal nonlinear element 40 is provided at the tip of the light shielding layer 52. One second conductive film 46 a constituting the two-terminal nonlinear element 40 is formed by a part of the light shielding layer 52. One end of the other second conductive film 46 b constituting the two-terminal nonlinear element 40 extends on the insulating film 31 to form the contact portion 24. A part of the pixel electrode 54 formed in a predetermined pattern on the interlayer insulating film 20 is electrically connected to the contact portion 24 through the contact hole 22. As described above, the two-terminal nonlinear element 40 having the back-to-back structure has one terminal connected to the light shielding layer 52 and the other terminal connected to the pixel electrode 54. The pixel electrode 54 is made of a transparent conductive film such as an ITO film.
[0022]
The feature of this embodiment is that, as shown in FIGS. 1 to 3, the end portion 56 of the pixel electrode 54 faces the wiring electrodes 48 (48 a, 48 b) and a part of the light shielding layer 52. It is formed in a state. That is, when the active matrix substrate 100 is viewed from the thickness direction of the substrate, the end portion 56 of the pixel electrode 54, the wiring electrode 48, and the light shielding layer 52 are continuously over, with the interlayer insulating film 20 interposed therebetween. It is formed in a wrapped state.
[0023]
The interlayer insulating film 20 is composed of an insulator capable of exposure and phenomenon. Among the insulators, organic materials such as Optmer PC manufactured by JSR Co., Ltd., RN-901 manufactured by Nissan Chemical Industries, Ltd., etc. (Positive type) photosensitive polyimide is preferable because it is easy to pattern.
[0024]
The insulating film 31 is made of, for example, tantalum oxide. The insulating film 31 prevents the first conductive film 42 from being peeled off by heat treatment performed after the deposition of the second conductive film 46 and prevents diffusion of impurities from the substrate 30 to the first conductive film 42. Since it is formed for the purpose of doing so, it is not always necessary if these are not problems.
[0025]
The first conductive film 42 may be tantalum alone or an alloy film containing tantalum as a main component and an element belonging to Groups 6, 7 and 8 in the periodic table. Preferred examples of the element added to the alloy include tungsten, chromium, molybdenum, rhenium, yttrium, lanthanum, and dysprolium. In particular, tungsten is preferable as the element, and the content is preferably 0.1 to 6 atomic%, for example. Although the said 2nd electrically conductive film 46 is not specifically limited, Usually, chromium, aluminum, etc. are comprised.
[0026]
In FIG. 1, the two-terminal nonlinear element 40 is connected at the end of the light shielding layer 52, but this shows a particularly preferable form. Even if it is not a part, the objective of this invention can fully be achieved.
[0027]
In FIG. 1, the two-terminal nonlinear element 40 has a back-to-back structure, but may be a cross type composed of a single first conductive film-insulating film-second conductive film. There is no problem.
[0028]
The active matrix substrate 100 having such a configuration has the following functions.
[0029]
(A) By forming the light shielding layer 52 integrally with the second conductive film 486 of the wiring electrode 48, the light shielding layer 52 can have a wiring function. The wiring electrode 48 and the light shielding layer 52 function as a light shielding layer because they have a sufficient thickness not to transmit light. As for the unit pixel region, the light shielding layer is surrounded almost completely by the first wiring electrode 48a, the second wiring electrode 48b, and the pair of opposed light shielding layers 52, 52 so as to surround the pixel electrode 54 almost completely. Can be formed. Furthermore, since the wiring electrode 48, the light shielding layer 52, and the pixel electrode 54 are formed in an overlapping state at the end of the pixel electrode 54, light leakage can be suppressed. As a result, the present embodiment has an extremely high light shielding function, and can display an image with high contrast.
[0030]
(B) Further, the wiring electrode 48, the light shielding layer 52, the two-terminal nonlinear element 40, and the pixel electrode 54 are provided on different surfaces (the front surface and the back surface of the interlayer insulating film) via the interlayer insulating film 20. Therefore, compared with the case where the pixel electrode, the wiring electrode, and the two-terminal nonlinear element are formed on the same plane, the area of the pixel electrode can be greatly increased, and the aperture ratio of the substrate can be increased.
[0031]
(LCD panel)
FIG. 4 shows an example of an equivalent circuit of an active matrix type liquid crystal display panel using the two-terminal nonlinear element 40. The liquid crystal display panel 10 includes a scanning signal driving circuit 200 and a data signal driving circuit 210. The liquid crystal display panel 10 is provided with signal lines, that is, a plurality of scanning lines 12 and a plurality of data lines 14. The scanning lines 12 are provided by the scanning signal driving circuit 200, and the data lines 14 are provided by the data signal driving circuit 210. Driven by. In each pixel region 16, a two-terminal nonlinear element 40 and a liquid crystal display element (liquid crystal layer) 41 are connected in series between the scanning line 12 and the data line 14. In FIG. 4, the two-terminal nonlinear element 40 is connected to the scanning line 12 side and the liquid crystal display element 41 is connected to the data line 14 side. The liquid crystal display element 41 may be provided on the scanning line 12 side on the line 14 side.
[0032]
FIG. 5 is a perspective view schematically showing an example of the structure of the liquid crystal display panel according to the first embodiment. In the liquid crystal display panel 10, two substrates, that is, an active matrix substrate 100 and a counter substrate 300 are provided to face each other, and liquid crystal is sealed between the substrates 100 and 300. As described above, the active matrix substrate 100 has the insulating film 31 formed on the substrate 30. A plurality of signal lines (scanning lines) 12 are provided on the surface of the insulating film 31. In the counter substrate 300, a plurality of data lines 14 are formed in a strip shape on the substrate 32 so as to intersect the scanning lines 12. 5, the same members as those shown in FIGS. 1 to 3 are denoted by the same reference numerals.
[0033]
Then, based on the signals applied to the scanning lines 12 and the data lines 14, the liquid crystal display element 41 is switched to the display state, the non-display state, or an intermediate state thereof to control the display operation. As a control method for the display operation, a generally used method can be applied.
[0034]
(Manufacturing process of active matrix substrate)
Next, a method for manufacturing the active matrix substrate of the present invention exemplified above will be described. The active matrix substrate is manufactured by the following process, for example.
[0035]
(1) First, an insulating film 31 made of tantalum oxide is formed on the substrate 30. The insulating film 31 can be formed by, for example, a method of thermally oxidizing a tantalum film deposited by a sputtering method, or a sputtering or co-sputtering method using a target made of tantalum oxide. Since this insulating film 31 is provided to improve the adhesion of the first conductive film 42 and prevent the diffusion of impurities from the substrate 30, it is formed with a film thickness of, for example, about 50 to 200 nm. The
[0036]
Next, the first conductive film 42 of the two-terminal nonlinear element 40 made of tantalum or a tantalum alloy and the first conductive film 482 of the wiring electrode 48 are formed on the insulating film 31. A suitable value for the film thickness of the first conductive film 42 is selected depending on the characteristics of the two-terminal nonlinear element 40 and is usually about 100 to 500 nm. As a method of forming the first conductive films 42 and 482 made of a tantalum alloy, a sputtering method using a mixed target, a co-sputtering method, an electron beam evaporation method, or the like can be used. As an element contained in the tantalum alloy, elements of Groups 6, 7 and 8 in the periodic table, preferably the above-described elements such as tungsten, chromium, molybdenum and rhenium can be selected.
[0037]
(2) Next, insulating films 44 and 484 made of tantalum oxide are formed on the first conductive film 42 forming the two-terminal nonlinear element 40 and the first conductive film 482 forming the wiring electrode 48. The insulating films 44 and 484 are formed by oxidizing the surfaces of the first conductive films 42 and 482 using, for example, an anodic oxidation method. Although the chemical conversion liquid used for anodization is not specifically limited, For example, 0.01-0.1 weight% citric acid aqueous solution can be used. A preferable film thickness is selected for the insulating film 44 depending on the characteristics of the two-terminal nonlinear element, for example, about 20 to 70 nm.
[0038]
(3) Next, a metal film such as chromium, aluminum, titanium, or molybdenum is deposited by sputtering, for example, and after the film is formed, patterning is performed by a commonly used photolithography and etching technique to form a two-terminal nonlinear element. 40 second conductive films 46 and light shielding layers 52 are formed. A suitable value for the film thickness of the second conductive film 46 is selected depending on the characteristics of the two-terminal nonlinear element, and is usually about 30 to 200 nm.
[0039]
(4) Insulating film in which a photosensitive resin solution such as Optomer PC manufactured by JSR Co., Ltd. or RN-901 manufactured by Nissan Chemical Industries Co., Ltd. is formed is formed with the wiring electrode 48, the light shielding layer 52, and the two-terminal nonlinear element 40. 31 is applied. Then, an interlayer insulating film 20 having a predetermined pattern of contact holes 22 reaching the contact portion 24 of the two-terminal nonlinear element 40 is provided by a commonly used photolithography technique.
[0040]
(5) The pixel electrode 54 is formed of a transparent conductive film, for example, an ITO film. The pixel electrode 54 is formed on the interlayer insulating film 20 and the contact hole 22. The film thickness of the pixel electrode 54 is normally about 30 to 200 nm. The transparent conductive film can be formed by a sputtering method or an electron beam evaporation method, and is patterned by a commonly used photolithography and etching technique after the film formation.
[0041]
Second embodiment (active matrix substrate)
A second embodiment of the active matrix substrate will be described with reference to FIGS. FIG. 6 is a plan view schematically showing the structure of the active matrix substrate 400, and FIG. 7 is a cross-sectional view schematically showing a portion along the line CC in FIG.
[0042]
The active matrix substrate 400 according to the present embodiment is basically the same as that of the first embodiment except that the two-terminal nonlinear element 40 is not connected to the light shielding layer 52 except for the first embodiment described above. It is very similar to the form. Members having substantially the same functions as those shown in FIGS. 1 to 3 are given the same reference numerals, and detailed descriptions thereof are omitted.
[0043]
That is, the active matrix substrate 400 includes an insulating and transparent substrate 30, an insulating film 31 formed on the surface of the substrate 30, and wiring electrodes 48 formed on the insulating film 31 in a predetermined pattern. A back-to-back non-linear element 40 having a back-to-back structure, and a light shielding layer 52 disposed along a direction intersecting the wiring electrode 48. Further, the active matrix substrate 400 includes an interlayer insulating film 20 provided on the surface of the insulating film 31 on which the wiring electrode 48, the light shielding layer 52, and the two-terminal nonlinear element 40 are formed, and a predetermined thickness on the interlayer insulating film 20. And a contact portion 24 that connects the pixel electrode 54 and the two-terminal nonlinear element 40 via the contact hole 22 formed in the interlayer insulating film 20.
[0044]
Assuming that one of the two adjacent wiring electrodes 48 is a first wiring electrode 48a and the other wiring electrode is 48b, one end of the light shielding layer 52 is the first conductive film 482 of the first wiring electrode 48a ( The other end is formed in a state separated from the second wiring electrode 48b. The light shielding layer 52 is formed by the same process as the first conductive film 482 of the wiring electrode 48 and the first conductive film 42 of the two-terminal nonlinear element 40. The tip of the light shielding layer 52 connected to the first wiring electrode 48a extends to a position close to the second conductive wiring electrode 48b and the two-terminal nonlinear element 40 connected thereto. In the example shown in FIGS. 6 and 7, the light shielding layer 52 includes a conductive film 522 and an insulating film 524 formed on the surface of the conductive film 522.
[0045]
One second conductive film 46a constituting the two-terminal nonlinear element 40 is formed by a part of the second conductive film 486 of the second wiring electrode 48b. The other second conductive film 46 b constituting the two-terminal nonlinear element 40 is connected to the pixel electrode 54 formed in a predetermined pattern on the interlayer insulating film 20 via the contact portion 24. Thus, in the present embodiment, the back-to-back two-terminal nonlinear element 40 has one terminal connected to the wiring electrode 48 and the other terminal connected to the pixel electrode 54.
[0046]
What is characteristic of this embodiment is that, as in the first embodiment, the end portion 56 of the pixel electrode 54 faces the wiring electrodes 48 (48a, 48b) and a part of the light shielding layer 52. It is formed in a state. That is, when the active matrix substrate 400 is viewed from the thickness direction of the substrate, the end portion 56 of the pixel electrode 54, the wiring electrode 48, and the light shielding layer 52 are continuously over, with the interlayer insulating film 20 interposed therebetween. It is formed in a wrapped state.
[0047]
Also in this embodiment, similarly to the first embodiment, a high light shielding function and an aperture ratio are provided. That is, (a) the wiring electrode 48 and the light shielding layer 52 function as a light shielding layer because they have a sufficient thickness so as not to transmit light. As for the unit pixel region, the light shielding layer is surrounded almost completely by the first wiring electrode 48a, the second wiring electrode 48b, and the pair of opposed light shielding layers 52, 52 so as to surround the pixel electrode 54 almost completely. Can be formed. Furthermore, since the wiring electrode 48 and the light shielding layer 52 and the pixel electrode 54 are formed in an overlapping state at the end portion 56 of the pixel electrode 54, light leakage can be suppressed. As a result, the present embodiment has an extremely high light shielding function, and can display an image with high contrast. Further, (b) the wiring electrode 48, the light shielding layer 52, the two-terminal nonlinear element 40, and the pixel electrode 54 are provided on different surfaces (the front surface and the back surface of the interlayer insulating film) via the interlayer insulating film 20. Therefore, compared with the case where the pixel electrode, the wiring electrode, and the two-terminal nonlinear element are formed on the same plane, the area of the pixel electrode can be greatly increased, and the aperture ratio of the substrate can be increased.
[0048]
In the first embodiment, since the two-terminal nonlinear element 40 is connected to the wiring electrode 48 through the light shielding layer 52, the light shielding layer 52 must be made of a conductive material. In the second embodiment, since the two-terminal nonlinear element 40 is directly connected to the wiring electrode 48 without interposing a light shielding layer, the light shielding layer 52 is not only a conductive substance but also an insulating material. It may consist of a substance. However, the light shielding layer 52 is preferably formed in the same process as the first conductive films 42 and 482 or the second conductive films 44 and 486 from the viewpoint of simplification of the process. When the light shielding layer 52 is formed of an insulating material having a light shielding property, it is not necessary to consider the short circuit between the first and second wiring electrodes 48 a and 48 b, so that both ends of the light shielding layer are connected to the wiring electrode 48. May be.
[0049]
In the above embodiment, the wiring electrode has a multilayer structure having the same cross-sectional shape as the two-terminal nonlinear element, but may be composed of a single conductive film.
[0050]
[Brief description of the drawings]
FIG. 1 is a plan view schematically showing a structure of an active matrix substrate according to a first embodiment.
2 is a cross-sectional view taken along line AA in FIG.
3 is a cross-sectional view taken along line BB in FIG.
FIG. 4 is a diagram showing an equivalent circuit of the liquid crystal display panel of the present invention.
FIG. 5 is a perspective view schematically showing a liquid crystal display panel of the present invention.
FIG. 6 is a plan view schematically showing the structure of an active matrix substrate according to a second embodiment.
7 is a cross-sectional view taken along line CC in FIG. 6. FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Liquid crystal display panel 12 Scan line 14 Data line 16 Pixel area 20 Interlayer insulating film 22 Contact hole 24 Contact part 30, 32 Substrate 31 Insulating film 40 Two-terminal nonlinear element 41 Liquid crystal display element 42 First conductive film 44 Insulating film 46 , 46a, 46b Second conductive film 48 Wiring electrode 48a First wiring electrode 48b Second wiring electrode 52 Light-shielding layer 54 Pixel electrode 56 Pixel electrode edge 100, 400 Active matrix substrate 200 Scan signal driving circuit 210 Data signal Drive circuit 300 Counter substrate

Claims (8)

substrate,
Wiring electrodes arranged in a predetermined pattern on the substrate;
A line-shaped arrangement disposed along a direction intersecting the wiring electrode, one end of which is electrically connected to the adjacent first wiring electrode and the other end of which is electrically separated from the adjacent second wiring electrode. Light shielding layer,
Having a first conductive film, an insulating film, and a second conductive film laminated on the substrate;
A two-terminal nonlinear element connected to the wiring electrode;
An interlayer insulating film provided on a surface of the substrate on which the wiring electrode, the light shielding layer, and the two-terminal nonlinear element are formed;
A pixel electrode formed in a predetermined pattern on the interlayer insulating film, and a contact portion for connecting the two-terminal nonlinear element and the pixel electrode through a contact hole formed in the interlayer insulating film;
Including
The active matrix substrate, wherein the wiring electrode and the light shielding layer have a portion facing an end of the pixel electrode through the interlayer insulating film in the thickness direction of the substrate. In claim 1,
The light shielding layer is formed in the same process as the first conductive film of the two-terminal nonlinear element. In claim 1,
The active matrix substrate, wherein the light shielding layer is formed in the same step as the second conductive film of the two-terminal nonlinear element. In any one of Claims 1 thru | or 3,
An active matrix substrate, wherein one terminal of the two-terminal nonlinear element is electrically connected to the other end of the light shielding layer. In any one of Claims 1 thru | or 3,
An active matrix substrate, wherein one terminal of the two-terminal nonlinear element is electrically connected to the wiring electrode. (A) forming a first conductive film constituting a two-terminal nonlinear element on a substrate;
(B) forming an insulating film on the first conductive film;
(C) forming a second conductive film on the insulating film;
(D) forming a wiring electrode;
(E) A line-shaped light shielding layer that is disposed along a direction intersecting the wiring electrode and at least one end is electrically separated from at least one of the adjacent first wiring electrode and second wiring electrode. Forming step,
(F) forming an interlayer insulating film on the surface of the substrate on which the wiring electrode, the light shielding layer, and the two-terminal nonlinear element are formed;
(G) forming a contact hole in the interlayer insulating film;
(H) forming a pixel electrode in a predetermined pattern on the interlayer insulating film, and forming a contact portion for connecting the two-terminal nonlinear element and the pixel electrode through the contact hole; Including
An active matrix substrate manufacturing method, wherein at least the step (a) and the step (e) are performed in the same step. (A) forming a first conductive film constituting a two-terminal nonlinear element on a substrate;
(B) forming an insulating film on the first conductive film;
(C) forming a second conductive film on the insulating film;
(D) forming a wiring electrode;
(E) A line-shaped light shielding layer that is disposed along a direction intersecting the wiring electrode and at least one end is electrically separated from at least one of the adjacent first wiring electrode and second wiring electrode. Forming step,
(F) forming an interlayer insulating film on the surface of the substrate on which the wiring electrode, the light shielding layer, and the two-terminal nonlinear element are formed;
(G) forming a contact hole in the interlayer insulating film;
(H) forming a pixel electrode in a predetermined pattern on the interlayer insulating film, and forming a contact portion connecting the two-terminal nonlinear element and the pixel electrode through the contact hole; Including
An active matrix substrate manufacturing method, wherein at least the step (c) and the step (e) are performed in the same step. An active matrix substrate according to any one of claims 1 to 5,
A counter substrate provided with a wiring electrode at a position facing the pixel electrode of the active matrix substrate, and a liquid crystal layer sealed between the active matrix substrate and the counter substrate,
A liquid crystal display panel comprising:

Images