JPH04369625A - Liquid crystal display device - Google Patents

Liquid crystal display device

Info

Publication number
JPH04369625A
JPH04369625A JP3146437A JP14643791A JPH04369625A JP H04369625 A JPH04369625 A JP H04369625A JP 3146437 A JP3146437 A JP 3146437A JP 14643791 A JP14643791 A JP 14643791A JP H04369625 A JPH04369625 A JP H04369625A
Authority
JP
Japan
Prior art keywords
thin film
layer
metal thin
resistance
lead wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3146437A
Other languages
Japanese (ja)
Inventor
Kazuhiko Tadokoro
田所 一彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP3146437A priority Critical patent/JPH04369625A/en
Publication of JPH04369625A publication Critical patent/JPH04369625A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)

Abstract

PURPOSE:To suppress the increase in the resistance of lead wiring electrodes and to prevent the degradation in display grade by connecting a metallic thin film of the 1st layer constituting an MIM element to a picture element electrode and constituting the lead wiring electrode of a metallic thin film of the 2nd layer of a metallic thin film and the 3rd layer having the resistance lower than the resistance of this layer. CONSTITUTION:The MIM element 14 constituted of the metallic thin film 11 of the 1st layer, the anodized film 12 thereof and the metallic thin film 13 of the 2nd layer is disposed on one main surface of an insulating substrate 10. A picture element electrode 15 is connected to the metallic thin film 11 of the 1st layer. The lead wiring electrode 17 is constituted of the metallic thin film 13 of the 2nd layer and the metallic this film 16 of the 3rd layer having the resistance lower than the resistance of this film. A counter electrode 19 is formed on one main surface of the insulating substrate 18. Two sheets of the insulating substrates 10, 18 are so combined that the respective main surface sides thereof face each other. A liquid crystal layer 20 is crimped in this spacing. Then, the increase in the resistance of the lead wiring electrode 17 is suppressed without impairing the element characteristics of the MIM element 14. The degradation in the display grade by the trend toward the larger sizes of the screen and the higher accuracy is prevented.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】この発明は、MIM素子を設置し
た液晶表示装置、特にその構造に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device equipped with MIM elements, and particularly to its structure.

【0002】0002

【従来の技術】近年、液晶表示器を用いた表示装置は、
パ−ソナル・コンピュ−タ−、ワ−ドプロセッサ−、更
にはOA用の端末機器、TV用画像表示等の大容量情報
表示用途に使用されてきており、より高画質が求められ
るようになってきた。このスイッチング(素子列)アレ
イには各種あるが、構造が簡単で、製造が容易である2
端子の非線形抵抗素子、中でも、現在のところ実用化さ
れているものとしてMIM型を挙げることができる。
[Prior Art] In recent years, display devices using liquid crystal displays have been
It has been used for large-capacity information display applications such as personal computers, word processors, office automation terminal equipment, and TV image displays, and higher image quality is now required. It's here. There are various types of switching (element row) arrays, but two have a simple structure and are easy to manufacture.
Among the terminal nonlinear resistance elements, the MIM type is one that is currently in practical use.

【0003】図3は従来のMIM素子を設置したマトリ
クス型液晶表示装置の一例を示す図であり、同図(a)
は一画素の構造を示す平面図、同図(b)は同図(a)
のA−A´断面に相当する素子部の断面図である。これ
を製造工程に従って説明すると、まず、絶縁基板1上に
MIM素子の下側の金属とリ―ド配線電極を兼ねる一層
目金属薄膜(Ta)2を成膜し、所定の形状にパタ―ニ
ングした後、陽極酸化を行なって表面に絶縁膜(Ta2
 O5 )3を形成する。次に、MIM素子の上側の金
属と画素電極への接続電極を兼ねる二層目金属薄膜(T
a、Cr、Ti等)4を成膜し、所定の形状にパタ―ニ
ングする。最後に、画素透明電極(ITO)5の成膜・
パタ―ニングを行なう。
FIG. 3 is a diagram showing an example of a matrix type liquid crystal display device equipped with a conventional MIM element.
is a plan view showing the structure of one pixel, and (b) is a plan view showing the structure of one pixel.
FIG. 3 is a cross-sectional view of the element portion corresponding to the AA' cross section of FIG. To explain this according to the manufacturing process, first, a first layer metal thin film (Ta) 2, which also serves as the lower metal of the MIM element and the lead wiring electrode, is formed on the insulating substrate 1, and then patterned into a predetermined shape. After that, an insulating film (Ta2) is formed on the surface by anodic oxidation.
O5 )3 is formed. Next, a second metal thin film (T
a, Cr, Ti, etc.) 4 is formed into a film and patterned into a predetermined shape. Finally, the pixel transparent electrode (ITO) 5 is formed and
Perform patterning.

【0004】0004

【発明が解決しようとする課題】ところが、表示画面の
大画面化・高精細化を行なうためには、リ―ド配線電極
を長くて細くしなければならないため、図3に示したよ
うな液晶表示装置では、リ―ド配線電極の配線抵抗が高
くなる。このリ―ド配線電極の高抵抗化を防ぐためには
、一層目金属薄膜をより低抵抗な金属に変更すればよい
が、一層目金属薄膜はMIM素子の下側の金属を兼ね、
その表面に陽極酸化によってMIM素子の絶縁膜を形成
するので、この変更はMIM素子の特性に与える影響が
大きく、金属材料選択の範囲が限定され有効な手段とは
なり得ない。また、一層目金属薄膜の膜厚を厚くして低
抵抗化することはMIM素子側面でのオープンの原因と
なる。更に、一層目金属薄膜の下に低抵抗金属薄膜を設
け、リ―ド配線電極を二層化配線抵抗を低下させること
は、MIM素子の下側の金属も二層構造となってしまう
ため、低抵抗金属薄膜側面でのリーク電流によってMI
M素子の特性を低下させる。このように、従来の構造の
MIM素子を設置したマトリクス型液晶表示装置では、
リ―ド配線電極の高抵抗化を防止するのが困難である。 このリ―ド配線電極の高抵抗化により、印加された選択
(信号)パルス電圧の波形が鈍って、表示品位を低下さ
せるという問題を生じる。
[Problems to be Solved by the Invention] However, in order to make the display screen larger and higher in definition, the lead wiring electrodes must be made longer and thinner, so the liquid crystal display as shown in FIG. In display devices, the wiring resistance of lead wiring electrodes increases. In order to prevent this lead wiring electrode from increasing in resistance, the first layer metal thin film can be changed to a metal with lower resistance, but the first layer metal thin film also serves as the metal under the MIM element.
Since the insulating film of the MIM element is formed on the surface by anodic oxidation, this change has a large influence on the characteristics of the MIM element, limits the range of metal material selection, and cannot be an effective means. Further, increasing the thickness of the first metal thin film to lower the resistance causes an open on the side surface of the MIM element. Furthermore, by providing a low-resistance metal thin film under the first layer metal thin film and making the lead wiring electrode into a two-layer structure to lower the wiring resistance, the metal underneath the MIM element will also have a two-layer structure. MI due to leakage current on the side of the low-resistance metal thin film
Degrades the characteristics of the M element. In this way, in a matrix type liquid crystal display device equipped with MIM elements of the conventional structure,
It is difficult to prevent the lead wiring electrode from becoming high in resistance. This increase in the resistance of the lead wiring electrode causes the waveform of the applied selection (signal) pulse voltage to become dull, resulting in a problem of deterioration of display quality.

【0005】この発明は上記事情に鑑みなされたもので
あり、MIM素子の特性に影響を与えずに、リード配線
電極の高抵抗化を抑え、それによる表示品位の低下を防
止することを目的とする。
[0005] The present invention was made in view of the above circumstances, and its purpose is to suppress the increase in resistance of lead wiring electrodes and prevent the resulting deterioration of display quality without affecting the characteristics of the MIM element. do.

【0006】[0006]

【課題を解決するための手段】この発明は、液晶層を挟
持する2枚の絶縁基板の少なくとも一方に、リード配線
電極と接続されたMIM素子及び画素電極を各画素ごと
に配置してなる液晶表示装置についてのものである。そ
して、MIM素子は一層目金属薄膜、この一層目金属薄
膜の陽極酸化膜及び二層目金属薄膜によって形成され、
画素電極は一層目金属薄膜に接続され、リード配線電極
は二層目金属薄膜及びこれより低抵抗な三層目金属薄膜
からなる。
[Means for Solving the Problems] The present invention provides a liquid crystal display in which an MIM element connected to a lead wiring electrode and a pixel electrode are arranged for each pixel on at least one of two insulating substrates sandwiching a liquid crystal layer. This is about display devices. The MIM element is formed by a first metal thin film, an anodized film of the first metal thin film, and a second metal thin film,
The pixel electrode is connected to the first metal thin film, and the lead wiring electrode is made up of the second metal thin film and the third metal thin film, which has a lower resistance.

【0007】[0007]

【作用】この発明では、リ―ド配線電極の一部である二
層目金属薄膜より抵抗の低い三層目金属薄膜が、MIM
素子の絶縁層と接触しないように構造上工夫してあるた
め、MIM素子の特性を劣化させることなく、リード配
線電極を低抵抗化することができる。
[Operation] In this invention, the third layer metal thin film, which is a part of the lead wiring electrode and has a lower resistance than the second layer metal thin film,
Since the structure is designed to avoid contact with the insulating layer of the element, the resistance of the lead wiring electrode can be reduced without deteriorating the characteristics of the MIM element.

【0008】[0008]

【実施例】以下、この発明の詳細を図面を参照して説明
する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The details of the present invention will be explained below with reference to the drawings.

【0009】図1はこの発明の一実施例を示す図であり
、同図(a)は一画素の構造を示す平面図、同図(b)
は同図(a)のA−A´断面に相当する素子部における
装置の断面図である。図1に示すように、絶縁基板10
の一主面上には一層目金属薄膜11、その陽極酸化膜1
2及び二層目金属薄膜13より構成されるMIM素子1
4が配置され、画素電極15は一層目金属薄膜11に接
続されている。そして、二層目金属薄膜13と三層目金
属薄膜16によりリード配線電極17が構成されている
。また、絶縁基板18の一主面上には対向電極19が形
成されている。そして、2枚の絶縁基板10,18は互
いの一主面側が対向するように組合せられ、この間隙に
は液晶層20が挟持されている。
FIG. 1 is a diagram showing an embodiment of the present invention, and FIG. 1(a) is a plan view showing the structure of one pixel, and FIG. 1(b) is a plan view showing the structure of one pixel.
2 is a sectional view of the device in the element portion corresponding to the AA' section in FIG. As shown in FIG. 1, an insulating substrate 10
On one main surface is a first metal thin film 11, and its anodic oxide film 1.
MIM element 1 composed of 2 and second layer metal thin film 13
4 is arranged, and the pixel electrode 15 is connected to the first layer metal thin film 11. A lead wiring electrode 17 is constituted by the second metal thin film 13 and the third metal thin film 16. Further, a counter electrode 19 is formed on one main surface of the insulating substrate 18 . The two insulating substrates 10 and 18 are combined so that one main surface side faces each other, and a liquid crystal layer 20 is sandwiched between the two insulating substrates 10 and 18.

【0010】図2は図1(a)におけるMIM素子14
を有する基板の製造工程を示す平面図である。これを製
造工程に従って説明すると、まず、図2(a)に示すよ
うに、例えばガラスからなる絶縁基板10上にITOを
スパッタリング、蒸着等の方法で成膜した後、パタ―ニ
ングして画素電極15を形成する。次に、絶縁基板10
上に例えばTaを成膜した後、パタ―ニングして一層目
金属薄膜11を形成する。続いて、この一層目金属薄膜
11の陽極酸化を行なって、図2(b)に示すように、
Ta2 O5 からなる陽極酸化膜12を形成する。次
に、一層目金属薄膜11と陽極酸化膜12を図2(c)
に示すような形状にパタ―ニングする。続いて、絶縁基
板10上に例えばCrとAlを順次成膜した後、図2(
d)に示すような形状にパタ―ニングして、Crからな
る二層目金属薄膜13とAlからなる三層目金属薄膜1
6を形成する。
FIG. 2 shows the MIM element 14 in FIG. 1(a).
FIG. To explain this according to the manufacturing process, first, as shown in FIG. 2(a), ITO is formed into a film by sputtering, vapor deposition, etc. on an insulating substrate 10 made of glass, for example, and then patterned to form a pixel electrode. form 15. Next, the insulating substrate 10
After forming a film of Ta, for example, thereon, patterning is performed to form the first metal thin film 11. Subsequently, this first layer metal thin film 11 is anodized, as shown in FIG. 2(b).
An anodic oxide film 12 made of Ta2O5 is formed. Next, the first layer metal thin film 11 and anodic oxide film 12 are formed as shown in FIG. 2(c).
Pattern it into the shape shown in . Subsequently, after sequentially forming, for example, Cr and Al films on the insulating substrate 10, as shown in FIG.
A second metal thin film 13 made of Cr and a third metal thin film 1 made of Al are patterned into the shape shown in d).
form 6.

【0011】この実施例では、MIM素子14を構成す
る二層目金属薄膜13上に、これより低抵抗な三層目金
属薄膜16を設け、この2つの薄膜をリ―ド配線電極1
7とすることにより、MIM素子14の素子特性を損な
うことなく、リ―ド配線電極抵抗の低下が可能となる。 この結果、表示画面の大画面化・大容量化に伴うリ―ド
配線電極抵抗の増大を抑え、それによる表示品位の低下
を防ぐことができる。また、一層目金属薄膜11をリー
ド配線電極17に用いないため、基板外部との電気的接
続を行うための端子部に陽極酸化膜による絶縁膜が形成
されることがなく、その形成を防止したり、除去したり
する工程を行なう必要がなくなる。更に、この実施例に
おいて、二層目金属薄膜13の形成・パタ―ニングを行
なってから、三層目金属薄膜16の形成・パタ―ニング
を行なうように変更すれば、リード配線電極17のオ―
プンを確実に防ぐことができる。
In this embodiment, a third metal thin film 16 having a lower resistance is provided on the second metal thin film 13 constituting the MIM element 14, and these two thin films are connected to the lead wiring electrode 1.
7, it is possible to reduce the lead wiring electrode resistance without impairing the device characteristics of the MIM element 14. As a result, it is possible to suppress an increase in lead wiring electrode resistance due to an increase in the size and capacity of a display screen, and to prevent a deterioration in display quality due to this. In addition, since the first layer metal thin film 11 is not used for the lead wiring electrode 17, an insulating film made of an anodic oxide film is not formed on the terminal portion for electrical connection to the outside of the board, and this can be prevented. There is no need to carry out the process of cleaning or removing it. Furthermore, in this embodiment, if the formation and patterning of the second layer metal thin film 13 is performed and then the formation and patterning of the third layer metal thin film 16 is performed, the originality of the lead wiring electrode 17 can be improved. ―
Poon can be definitely prevented.

【0012】なお、一層目金属薄膜11を図2(b)に
示すような形状にパタ―ニングしてから陽極酸化を行な
うのは、一層目金属薄膜11の側面の一部を陽極酸化し
て、この部分で一層目金属薄膜11と二層目金属薄膜1
3がショ―トするのを防止するためである。また、二層
目金属薄膜13の材料としては、Cr以外にTaやTi
であってもよい。
Note that the first layer metal thin film 11 is patterned into the shape shown in FIG. 2(b) and then anodized. , in this part, the first layer metal thin film 11 and the second layer metal thin film 1
This is to prevent 3 from being shorted. In addition to Cr, the second metal thin film 13 may be made of Ta or Ti.
It may be.

【0013】[0013]

【発明の効果】この発明は、MIM素子を構成する一層
目金属薄膜を画素電極に接続し、リ―ド配線電極を二層
目金属薄膜及びそれより低抵抗な三層目金属薄膜によっ
て構成することにより、MIM素子の素子特性を損なう
ことなくリ―ド配線電極の抵抗の増大を抑え、大画面化
・高精細化による表示品位の低下のない液晶表示装置を
提供することができる。
[Effects of the Invention] According to the present invention, the first metal thin film constituting the MIM element is connected to the pixel electrode, and the lead wiring electrode is formed by the second metal thin film and the third metal thin film having a lower resistance. As a result, it is possible to suppress an increase in the resistance of the lead wiring electrode without impairing the element characteristics of the MIM element, and to provide a liquid crystal display device that does not suffer from deterioration in display quality due to larger screens and higher definition.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】この発明の一実施例を示す平面図及び断面図で
ある。
FIG. 1 is a plan view and a sectional view showing an embodiment of the present invention.

【図2】この発明の一実施例における製造工程を示す平
面図である。
FIG. 2 is a plan view showing a manufacturing process in an embodiment of the present invention.

【図3】従来の液晶表示装置の一例を示す平面図及び断
面図である。
FIG. 3 is a plan view and a cross-sectional view showing an example of a conventional liquid crystal display device.

【符号の説明】[Explanation of symbols]

10,18……絶縁基板 11……一層目金属薄膜 12……陽極酸化膜 13……二層目金属薄膜 14……MIM素子 15……画素電極 16……三層目金属薄膜 17……リード配線電極 20……液晶層 10, 18...Insulating substrate 11...First layer metal thin film 12...Anodic oxide film 13...Second layer metal thin film 14...MIM element 15...Pixel electrode 16...Third layer metal thin film 17...Lead wiring electrode 20...Liquid crystal layer

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  液晶層を挟持する2枚の絶縁基板の少
なくとも一方に、リード配線電極と接続されたMIM(
Metal−Insulator−Metal )素子
及び画素電極を各画素ごとに配置してなる液晶表示装置
において、前記MIM素子は一層目金属薄膜、この一層
目金属薄膜の陽極酸化膜及び二層目金属薄膜によって形
成され、前記画素電極は前記一層目金属薄膜に接続され
、前記リード配線電極は前記二層目金属薄膜及びこれよ
り低抵抗な三層目金属薄膜からなることを特徴とする液
晶表示装置。
1. An MIM (MIM) connected to lead wiring electrodes on at least one of two insulating substrates sandwiching a liquid crystal layer.
In a liquid crystal display device in which a Metal-Insulator-Metal) element and a pixel electrode are arranged for each pixel, the MIM element is formed by a first metal thin film, an anodized film of the first metal thin film, and a second metal thin film. A liquid crystal display device characterized in that the pixel electrode is connected to the first layer metal thin film, and the lead wiring electrode is made of the second layer metal thin film and a third layer metal thin film having a lower resistance than the second layer metal thin film.
JP3146437A 1991-06-19 1991-06-19 Liquid crystal display device Pending JPH04369625A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3146437A JPH04369625A (en) 1991-06-19 1991-06-19 Liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3146437A JPH04369625A (en) 1991-06-19 1991-06-19 Liquid crystal display device

Publications (1)

Publication Number Publication Date
JPH04369625A true JPH04369625A (en) 1992-12-22

Family

ID=15407647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3146437A Pending JPH04369625A (en) 1991-06-19 1991-06-19 Liquid crystal display device

Country Status (1)

Country Link
JP (1) JPH04369625A (en)

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