JP3760064B2 - 半導体装置の製造方法及び半導体装置の平坦化加工装置 - Google Patents

半導体装置の製造方法及び半導体装置の平坦化加工装置 Download PDF

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Publication number
JP3760064B2
JP3760064B2 JP22492699A JP22492699A JP3760064B2 JP 3760064 B2 JP3760064 B2 JP 3760064B2 JP 22492699 A JP22492699 A JP 22492699A JP 22492699 A JP22492699 A JP 22492699A JP 3760064 B2 JP3760064 B2 JP 3760064B2
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JP
Japan
Prior art keywords
semiconductor device
fixed abrasive
wet
polishing
abrasive disc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP22492699A
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English (en)
Japanese (ja)
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JP2001047360A5 (https=
JP2001047360A (ja
Inventor
創一 片桐
感 安井
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Hitachi Ltd
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Hitachi Ltd
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Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP22492699A priority Critical patent/JP3760064B2/ja
Priority to US09/634,740 priority patent/US6390895B1/en
Publication of JP2001047360A publication Critical patent/JP2001047360A/ja
Priority to US10/124,457 priority patent/US6477825B2/en
Publication of JP2001047360A5 publication Critical patent/JP2001047360A5/ja
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Publication of JP3760064B2 publication Critical patent/JP3760064B2/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP22492699A 1999-08-09 1999-08-09 半導体装置の製造方法及び半導体装置の平坦化加工装置 Expired - Fee Related JP3760064B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP22492699A JP3760064B2 (ja) 1999-08-09 1999-08-09 半導体装置の製造方法及び半導体装置の平坦化加工装置
US09/634,740 US6390895B1 (en) 1999-08-09 2000-08-08 Flattening and machining method and apparatus
US10/124,457 US6477825B2 (en) 1999-08-09 2002-04-18 Flattening and machining method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22492699A JP3760064B2 (ja) 1999-08-09 1999-08-09 半導体装置の製造方法及び半導体装置の平坦化加工装置

Publications (3)

Publication Number Publication Date
JP2001047360A JP2001047360A (ja) 2001-02-20
JP2001047360A5 JP2001047360A5 (https=) 2004-10-07
JP3760064B2 true JP3760064B2 (ja) 2006-03-29

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JP22492699A Expired - Fee Related JP3760064B2 (ja) 1999-08-09 1999-08-09 半導体装置の製造方法及び半導体装置の平坦化加工装置

Country Status (2)

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US (2) US6390895B1 (https=)
JP (1) JP3760064B2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3538042B2 (ja) * 1998-11-24 2004-06-14 松下電器産業株式会社 スラリー供給装置及びスラリー供給方法
JP2002254295A (ja) * 2001-02-28 2002-09-10 Kawasaki Microelectronics Kk 化学機械研磨装置の研磨パッドの前処理方法
KR100462868B1 (ko) * 2001-06-29 2004-12-17 삼성전자주식회사 반도체 폴리싱 장치의 패드 컨디셔너
JP3934388B2 (ja) * 2001-10-18 2007-06-20 株式会社ルネサステクノロジ 半導体装置の製造方法及び製造装置
US7066801B2 (en) * 2003-02-21 2006-06-27 Dow Global Technologies, Inc. Method of manufacturing a fixed abrasive material
US6910951B2 (en) 2003-02-24 2005-06-28 Dow Global Technologies, Inc. Materials and methods for chemical-mechanical planarization
TWI293266B (en) * 2004-05-05 2008-02-11 Iv Technologies Co Ltd A single-layer polishing pad and a method of producing the same
US20100130107A1 (en) * 2008-11-24 2010-05-27 Applied Materials, Inc. Method and apparatus for linear pad conditioning

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59136934A (ja) 1983-01-27 1984-08-06 Nec Corp 半導体装置の製造方法
JPS62114870A (ja) 1985-11-09 1987-05-26 Kanebo Ltd ラツピング研磨機の研磨面保湿方法
JPH02185374A (ja) 1989-01-13 1990-07-19 Kanebo Ltd 合成砥石
US5665201A (en) * 1995-06-06 1997-09-09 Advanced Micro Devices, Inc. High removal rate chemical-mechanical polishing
JP3311203B2 (ja) * 1995-06-13 2002-08-05 株式会社東芝 半導体装置の製造方法及び半導体製造装置、半導体ウェーハの化学的機械的ポリッシング方法
JP3778594B2 (ja) * 1995-07-18 2006-05-24 株式会社荏原製作所 ドレッシング方法
CN1197542A (zh) 1995-09-13 1998-10-28 株式会社日立制作所 抛光方法和设备
US5879226A (en) * 1996-05-21 1999-03-09 Micron Technology, Inc. Method for conditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers
JP3676030B2 (ja) * 1997-04-10 2005-07-27 株式会社東芝 研磨パッドのドレッシング方法及び半導体装置の製造方法
JPH10303155A (ja) * 1997-04-24 1998-11-13 Hitachi Ltd 研磨方法および装置
US6184121B1 (en) * 1997-07-10 2001-02-06 International Business Machines Corporation Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same
US6191038B1 (en) * 1997-09-02 2001-02-20 Matsushita Electronics Corporation Apparatus and method for chemical/mechanical polishing
US5957757A (en) * 1997-10-30 1999-09-28 Lsi Logic Corporation Conditioning CMP polishing pad using a high pressure fluid
US6113462A (en) * 1997-12-18 2000-09-05 Advanced Micro Devices, Inc. Feedback loop for selective conditioning of chemical mechanical polishing pad
US6004861A (en) * 1997-12-19 1999-12-21 Advanced Micro Devices Process for making a discontinuous source/drain formation for a high density integrated circuit
JP2956694B1 (ja) * 1998-05-19 1999-10-04 日本電気株式会社 研磨装置及び研磨方法
TW377502B (en) * 1998-05-26 1999-12-21 United Microelectronics Corp Method of dual damascene
JP4095731B2 (ja) * 1998-11-09 2008-06-04 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
US6306008B1 (en) * 1999-08-31 2001-10-23 Micron Technology, Inc. Apparatus and method for conditioning and monitoring media used for chemical-mechanical planarization

Also Published As

Publication number Publication date
US6477825B2 (en) 2002-11-12
JP2001047360A (ja) 2001-02-20
US20020111125A1 (en) 2002-08-15
US6390895B1 (en) 2002-05-21

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