JP3740037B2 - TEMPERATURE SENSOR AND METHOD FOR MANUFACTURING THE TEMPERATURE SENSING ELEMENT - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a temperature sensor and a method for manufacturing the temperature detection element.
[0002]
[Prior art]
In semiconductor devices, temperature control with extremely high accuracy has been demanded as patterns become finer and wafers become larger. A temperature sensor generally used at present is a Pt resistance temperature sensor, and its resistance value is about 100Ω. For this reason, in order to measure the temperature with high accuracy, it is necessary to pass a measurement current of 1 to 2 mA to the Pt line due to limitations of circuit technology (limits such as high-speed sampling, AD resolution, and miniaturization). In that case, since the temperature sensor has a shape that is miniaturized in order to enhance high-speed response, a temperature increase larger than the control temperature range occurs. In other words, the temperature control range for semiconductors and the like is ± 0.01 ° C., but depending on the shape, the temperature rise of the Pt resistance temperature sensor (heat generation due to measurement current) can be as high as 0.1 ° C., which is more than 10 times the control temperature range It may also be. In such a case, if the flow of the gas to be controlled is constant, there is no problem in controllability because the temperature rise remains constant, but the flow of the gas is constantly fluctuating when viewed microscopically. For this reason, the temperature rise of the Pt resistance temperature sensor always fluctuates (because heat dissipation changes depending on the flow velocity), and the true target temperature cannot be measured. For example, if the gas flow changes by 10% without any other conditions changing, the detected temperature fluctuates by 10% (about 0.01 ° C) with a temperature rise of 0.1 ° C, and the temperature is It will be controlled as temperature. Therefore, there has been a demand for a temperature sensor that cannot perform high-precision control, has a large resistance value, has a small temperature rise, and can measure temperature with higher accuracy in a semiconductor manufacturing apparatus.
[0003]
The Pt temperature sensor uses a very thin Pt wire having an outer diameter of about 0.01 mm as a resistor, and has a resistance value of about 100Ω. For this reason, in order to measure the temperature with high accuracy, it is necessary to pass a measurement current of 1 to 2 mA to the Pt line due to limitations of circuit technology (limits such as high-speed sampling, AD resolution, and miniaturization). In that case, since the temperature sensor has a shape that is miniaturized in order to enhance high-speed response, a temperature increase larger than the control temperature range occurs. In other words, the temperature control range of semiconductors and the like is ± 0.01 ° C., but depending on the shape, the temperature rise of the Pt temperature sensor (heat generation due to measurement current) can be as high as 0.1 ° C., which is more than 10 times the control temperature range. There may be. In such a case, if the flow of the gas to be controlled is constant, there is no problem in the controllability because the temperature rise remains constant, but the flow of the gas is constantly changing when viewed microscopically. Therefore, the temperature rise of the Pt line temperature sensor always fluctuates (because heat dissipation changes depending on the flow velocity), and the true target temperature cannot be measured. For example, if the gas flow changes by 10% without any other conditions changing, the detected temperature fluctuates by 10% (about 0.01 ° C) with a temperature rise of 0.1 ° C, and the temperature is It will be controlled as temperature. Therefore, there has been a demand for a temperature sensor that cannot perform high-precision control, has a large resistance value, has a small temperature rise, and can measure temperature with higher accuracy in semiconductor manufacturing apparatuses.
[0004]
As the resistance value of the temperature sensor increases, less measurement current is required to detect the same temperature. The temperature rise due to the measurement current of the temperature sensor is small because it is proportional to the square of the current. That is, when the resistance value is 1 kΩ, the measured current is 1/10 of Pt100Ω, that is, 0.1 to 0.2 mA, and the temperature rise is 1/10. Become. In this case, even if the flow fluctuates, the fluctuation is within the control temperature, and high-precision control is possible.
[0005]
Since the current Pt temperature sensor manufactures a temperature sensor element by winding an extremely fine Pt wire around a glass tube, a small and high resistance element cannot be manufactured. For example, in order to produce a resistance value of 1 kΩ, a Pt wire 10 times longer is wound, which increases the size of the element itself.
[0006]
[Problems to be solved by the invention]
As described above, the conventional Pt temperature sensor has a problem as described below because it is a wound type and has a low resistance value.
[0007]
(1) Since the resistance value of the Pt line is usually as low as about 100Ω, it is necessary to supply a large measurement current when measuring a minute temperature change. However, in this case, the thermal influence due to self-heating is inevitably increased, so that highly accurate measurement cannot be performed.
[0008]
For example, when a resistor having a resistance value of 100Ω is used, when the temperature changes by 1 ° C., the resistance value changes by about 0.4Ω, and when the current at that time is 1 mA, the signal voltage becomes 0.4 mV. Therefore, the power consumption at this time is 10 ^-Four W (W = RI ² = 100 × 10 ^-3 × 10 ^-3 If the protective tube has a diameter of 1.5 to 2 mm, the temperature rises by about 0.1 to 0.2 m ° C. Therefore, if such a temperature sensor is used in a semiconductor manufacturing apparatus and temperature control is performed at 10 m ° C., the amount of heat generated (power consumption) of the sensor itself is large and control is disturbed. Therefore, when a pattern having a pattern width of about 0.1 μm is formed by photoetching on the large-diameter wafer described above, sufficient control can be achieved by shifting the temperature of the temperature sensor due to the heat generated by the sensor itself or interfering with temperature control. Can not be.
[0009]
(2) Since the insulating tube is used to insulate the Pt line from the protective tube for storing the Pt wire, the outer diameter of the protective tube is further increased, and the sensitivity (response) to the temperature change is low.
[0010]
Therefore, the present inventors diligently studied the above problems (1) and (2), and as a result of producing various sensors and conducting experiments, when using Ni foil resistors instead of Pt wires, Since the resistance pattern can be miniaturized by a semiconductor lithography technique, the power consumption can be reduced with high resistance, and the problem (1) has been completely solved.
[0011]
Further, when a trimming pattern is provided in the resistance pattern and laser trimming adjustment is performed in comparison with the standard element, a resistance value as designed is obtained, and variations in the initial resistance value can be reduced.
[0012]
In addition, if a Ni foil resistor is provided on a substrate and this substrate is inserted into a protective tube, a glass tube and an insulating tube are not required. Therefore, the protective tube can be reduced in diameter, and a temperature sensor that has a quick response to temperature changes is provided. As a result, the problem (2) was solved.
[0013]
In manufacturing the temperature sensor using the Ni foil resistor, Ni foil manufactured by rolling was used. In this case, in order to increase the resistance value, it is necessary to reduce the thickness of the Ni foil and reduce the pattern width (generally about three times the thickness), but the thickness by rolling is about 3 μm. At the limit, if it is rolled thinner than that, handling becomes difficult, and at the same time, problems such as pinholes, tearing, and uneven thickness occur in the Ni foil. Therefore, in addition to forming a desired fine resistance pattern by the photolithography technique, when the film thickness is further reduced by using the etching technique, pinholes and breakage do not occur, and the thickness can be made uniform. Moreover, since the pattern width can be reduced if the thickness is reduced (about 3 times the thickness), a Ni foil resistor having a smaller size and a higher resistance value (about 1,000Ω) could be obtained. .
[0014]
The present invention has been made on the basis of the above-described conventional problems and examination results, and the object of the present invention is that the pad portion can be thinned without peeling, and both miniaturization and high resistance value can be achieved simultaneously. An object of the present invention is to provide a temperature sensor that can be achieved and a method of manufacturing the temperature detection element.
[0015]
[Means for Solving the Problems]
In order to achieve the above object, a manufacturing method of a temperature detection element according to a first invention is a manufacturing method of a temperature detection element in which a Ni foil resistor is bonded to a substrate, and the Ni foil manufactured by rolling is used as the substrate. A bonding process for bonding to the surface of the Ni foil with an adhesive, an etching process for thinning the Ni foil to a predetermined thickness by wet etching or dry etching, and applying a resist to the Ni foil to form a predetermined shape by photolithography and etching. The Ni foil resistor and the resistor forming step for forming the pad portion are provided.
[0016]
A method for manufacturing a temperature detecting element according to a second invention is a method for manufacturing a temperature detecting element in which a Ni foil resistor is bonded to a substrate, and the Ni foil manufactured by rolling is bonded to the surface of the substrate with an adhesive. Bonding step, applying a resist to the Ni foil, forming a Ni foil resistor and a pad portion of a predetermined shape by photolithography and etching, and forming the Ni foil resistor by wet etching or dry etching. And an etching process for thinning the film to a predetermined thickness.
[0017]
According to a third aspect of the present invention, in the first or second aspect of the invention, the Ni foil resistor has a thickness of 3 μm or less.
[0018]
According to a fourth aspect of the present invention, there is provided a method for manufacturing a temperature detecting element according to the second aspect, wherein the pad portion is masked and etched to leave the pad portion thicker than the Ni foil resistor.
[0019]
A temperature sensor according to a fifth aspect of the present invention includes a temperature detection element in which a Ni foil resistor for temperature detection is bonded to a substrate, and an elongated protective tube that houses the temperature detection element, and the Ni foil resistor is etched. The film is thinned to a thickness of 3 μm or less.
[0020]
A temperature sensor according to a sixth aspect of the present invention includes a temperature detection element in which a Ni foil resistor for temperature detection is bonded to a substrate, and an elongated protective tube that houses the temperature detection element, and the Ni foil resistor is etched by It is made thinner than the thickness of the pad part.
[0021]
In the first and second inventions, since the etching process is provided, it is possible to form a Ni foil resistor that is thinner than the thickness limit of Ni foil rolling. Therefore, the resistance value can be increased. Further, if the thickness is small, the pattern width can be narrowed. As the resist, either a positive type or a negative type may be used. In the third and fifth inventions, pinholes and breakage do not occur, and a Ni foil resistor having a uniform thickness can be obtained.
In the fourth and sixth inventions, if the pad portion is thick, the strength is high, and it does not peel off when plating or connecting lead wires.
[0022]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described in detail based on embodiments shown in the drawings.
FIG. 1 is a cross-sectional view showing an embodiment of a temperature sensor according to the present invention, FIG. 2 is a cross-sectional view of an element unit, and FIG. 3 is a plan view of a temperature detection element. In these drawings, a temperature sensor generally indicated by reference numeral 1 is composed of an element unit 2 and a metal pipe 3 that houses the element unit 2, and constitutes a four-wire temperature sensor.
[0023]
The element unit 2 includes a temperature detection element 4 attached to a distal end portion of a flexible printed circuit board 5, an elongated protective tube 6 that houses the temperature detection element 4 together with the flexible printed circuit board 5, an external lead wire 7, The external lead wire 7 and the flexible printed circuit board 5 are electrically connected, and the protective tube 6 is hermetically sealed with the hermetic component 8 and the like.
[0024]
The temperature detection element 4 includes a ceramic substrate 10 made of alumina or the like, and a Ni foil resistor 11 bonded to the surface of the ceramic substrate 10 with an adhesive. The ceramic substrate 10 is formed in a thin and elongated sheet shape having a width of 0.7 to 1 mm, a length of 8 to 10 mm, and a thickness of about 0.4 mm.
[0025]
The Ni foil resistor 11 is formed such that the resistance pattern meanders in the longitudinal direction of the ceramic substrate 10 as shown in FIG. The return path pattern 11B is formed so as to be shifted by a half pitch and mesh with each other in a non-contact state, and has a total of four electrode portions (pad portions) 13 (13a to 13d). The Ni foil resistor 11 has a thickness of 1 to 3 μm, a width of 6 to 10 μm, a resistance value of about 1,000Ω, and the entire surface is covered with an insulating film. However, it may not be covered.
[0026]
14 is a resistance pattern for trimming, and several types of resistance patterns having different resistance values such as 1Ω, 2Ω, and 3Ω are formed. This resistance pattern 14 is all electrically connected to the Ni foil resistor 11 when the Ni foil resistor 11 is formed from Ni foil by a well-known photolithography technique and etching technique, and the resistance value is adjusted by laser trimming. Sometimes separated as appropriate. That is, if the resistance value of the Ni foil resistor 11 is 995Ω, for example, the resistance value is 5Ω lower than the desired resistance value of 1,000Ω, one 1Ω resistance pattern and two 2Ω resistance patterns are separated, The Ni foil resistor 11 is 000Ω. The actual trimming is adjusted with finer values.
[0027]
Such a Ni foil resistor 11 is formed by bonding a Ni foil produced by rolling to the surface of the ceramic substrate 10 with an adhesive, reducing the thickness of the Ni foil itself by dry etching or wet etching, and by photolithography technology. It can be easily formed by transferring and exposing the mask pattern and dissolving and removing portions other than the pattern. At this time, the pad portion 13 is also formed at the same time.
[0028]
The flexible printed circuit board 5 is formed in an elongated strip shape with polyimide or the like, so that the flexible printed circuit board 5 has substantially the same width as the ceramic substrate 10, and four circuit patterns 16 are formed in parallel on the surface, one end side of which is Each pad portion 13 of the Ni foil resistor 11 is bump-bonded (or wire-bonded) to the external lead wire 7 via a hermetic component 8 and to the other end side. Of the four circuit patterns 16, for example, two on both sides are used as current lines for supplying current to the Ni foil resistor 11, and a signal for detecting a voltage when the inner two are energized to the Ni foil resistor 11. Used as a detection line. Such a flexible printed circuit board 5 is inserted into the protective tube 6 together with the hermetic component 8, and presses the temperature detecting element 4 against the inner wall surface at the tip of the protective tube 6.
[0029]
The external lead wire 7 is composed of four (only two are shown in FIG. 1), two of which are for current lines, the other two are for signal detection lines, and one end is a terminal (lead) of the hermetic component 8. Line) 20 is connected to solder 21 and the other end is connected to circuit pattern 16 by solder. Reference numeral 22 denotes a stainless braided wire that protects the external lead wire 7.
[0030]
The hermetic component 8 includes four terminals 20, a metal ring 23 such as Kovar formed in a cylindrical shape with both ends open, and a sealing glass that seals the terminal 20 in the metal ring 23. 24, and the opening of the protective tube 6 is hermetically sealed. The solder connection portions between the terminals 20 and the lead wires 7 and the circuit pattern 16 are sealed with a synthetic resin 25, respectively. Each terminal 20 is potted with a synthetic resin 26.
[0031]
The protective tube 6 is manufactured by laser welding two different-diameter pipes made of SUS304, SUS316, or the like, that is, a small-diameter pipe 6A and a large-diameter pipe 6B with their axes aligned with each other. Inert gas or oil such as dry air is sealed.
[0032]
The small-diameter pipe 6A is a straight pipe that is closed at the distal end and open at the proximal end, has an outer diameter of 1.0 to 1.4 mm, a thickness of 0.05 mm, and a length of about 20 to 30 mm. The temperature detecting element 4 is incorporated together with the flexible printed board 5. Such a small diameter pipe 6A can be easily manufactured by drawing a pipe material.
[0033]
The large-diameter pipe 6B is a pipe having both ends open and is fitted into the metal pipe 3, and has an outer diameter of 3.0 mm, a length of about 7-8 mm, and a small-diameter pipe 6A at the center of the front end surface. The cylindrical boss part 30 which forms the connection part is integrally projected. The boss portion 30 has an outer diameter of 1.2 to 1.8 mm, a thickness of about 0.1 to 0.2 mm, and the same thickness as the large diameter pipe 6B. Such a large diameter pipe 6B can be easily manufactured by drawing a pipe material in the same manner as the small diameter pipe 6A.
[0034]
The metal pipe 3 is made of SUS316 or the like and is open at both ends, has an outer diameter of 4.0 mm, an inner diameter of 3.0 mm, and a length of about 30 to 50 mm. 6B and the stainless steel braid 22 of the external lead wire 7 are fitted and inserted, and the inside is filled with a synthetic resin (thermosetting resin) 31.
[0035]
Next, the manufacturing procedure of the temperature sensor 1 having the above structure will be described.
FIG. 4 is a flowchart showing the manufacturing procedure.
First, in step (hereinafter referred to as SP) 100, an Ni material ingot is prepared, and this ingot is rolled to produce a Ni foil having a required thickness (SP101). The thickness of the Ni foil obtained by rolling is 3 μm or more, and if it is less than that, it is not preferable because handling becomes difficult and pinholes are formed or the thickness becomes uneven.
[0036]
Next, the Ni foil is bonded to a large ceramic substrate with an adhesive (SP102), and the Ni foil is thinned by wet etching or dry etching over the entire surface (SP103). In the case of wet etching, it is immersed in an etching solution and dissolved little by little. In the case of dry etching, ions and electrons are irradiated on the Ni foil surface by sputtering, plasma, etc., and then gradually etched. By such an etching process, the thickness of the Ni foil is set to 1.0 to 3 μm, preferably 1.5 to 3 μm. When the thickness is 1 μm or less, wrinkles are formed, torn, or holes are formed, which is not preferable.
[0037]
Next, the Ni foil is etched into a predetermined pattern by a photolithography technique (photoetching), and the Ni foil resistor 11 and the pad portion 13 are manufactured (SP104). That is, a resist is applied to the entire surface of the Ni foil by spin coating, and ultraviolet light (or electron beam) is irradiated to transfer and expose the mask pattern onto the resist. Next, the exposed resist is dissolved with a solution, and unnecessary portions of the resist are removed. A negative resist or a positive resist is selected depending on whether the exposed portion is left or removed. The Ni foil is exposed in the portion where the resist is removed, and the exposed Ni foil is removed by wet etching or dry etching. When the remaining resist is peeled off, removed, and cleaned, the manufacture of the Ni foil resistor 11 and the pad portion 13 having a predetermined pattern shown in FIG. 3 is completed. Here, a series of processes from application of the resist to manufacture of the Ni foil resistor 11 and the pad portion 13 is referred to as a resistor forming process.
[0038]
Next, in order to increase the strength of the pad portion 13 and facilitate bonding when attaching the electrode, the surface of the pad portion 13 is plated to make it thicker than the Ni foil resistor 11 (SP105). At this time, the Ni foil resistor is masked. The thickness of the pad portion 13 including the plating layer is about 3 μm. If the thickness of the pad portion 13 is thin, the pad portion 13 may not be able to withstand the stress after plating and the pad portion 13 may be peeled off. Moreover, even if it does not peel off after the plating process, it may be peeled off by heat at the time of subsequent bump bonding or when wire bonding is performed, which is not preferable.
[0039]
Next, the resistance value of the Ni foil resistor 11 is adjusted by laser trimming to a predetermined resistance value (SP106). This resistance value adjustment is performed by separating the trimming resistor pattern 14 from the Ni foil resistor 11 by laser trimming while comparing with the standard element.
[0040]
Then, the ceramic substrate is cut into a predetermined size (SP107). As a result, a plurality of temperature detecting elements 4 are manufactured.
[0041]
The flexible printed board 5 is performed in parallel with the production of the temperature detection element 4 (SP108), and the temperature detection element 4 is electrically joined by a solder piece (SP109). Next, in step SP110, the flexible printed circuit board 5 and the terminals 20 of the hermetic component 8 are soldered.
[0042]
The protective tube 6 is performed in parallel with the production of the temperature detection element 4 and the flexible printed circuit board 5 (SP111), and the temperature detection element 4 is incorporated together with the flexible printed circuit board 5 and the hermetic component 8 inside so It is sealed by the component 8 (SP112).
[0043]
At this time, the front end and the back surface of the temperature detecting element 4 are pressed against the inner wall surface of the tip of the small diameter pipe 6A. This pressing is performed by using a restoring force due to elasticity of the flexible printed circuit board 5 itself. In addition, before sealing the large-diameter pipe 6 </ b> B with the hermetic component 8, an inert gas or oil is sealed inside the protective tube 6.
[0044]
The external lead wire 7 is performed in parallel with the production of the temperature detecting element 4, the flexible printed circuit board 5 and the protective tube 6 (SP113), and is electrically connected to the terminal 20 of the hermetic component 8 (SP114). Further, it is housed in the metal pipe 3 and sealed with the resin 31 (SP115). Thereby, the element unit 2 is completed. The element unit 2 is inspected for performance (SP116), and the acceptable product is housed in the metal pipe 3 and sealed with the resin 31 to complete the temperature sensor 1 (SP117).
[0045]
FIG. 5 is a flowchart showing another manufacturing procedure of the present invention.
In this manufacturing method, a Ni foil formed by rolling is bonded to a large ceramic substrate with an adhesive, a resist is applied to the Ni foil, a mask pattern is transferred and exposed by a photolithography technique, and portions other than the exposed portion are etched. The Ni foil is dissolved and removed to form a predetermined pattern shape, that is, a resistor and a pad portion (SP121). Next, the Ni foil resistor 11 is manufactured by thinning the Ni foil to a desired film thickness by wet etching or dry etching (SP122). At this time, the pad portion 13 is masked so as not to be etched, and the thickness remains thicker than that of the Ni foil resistor 11. Since the other steps are exactly the same as the manufacturing procedure shown in FIG. 4, the same steps are denoted by the same reference numerals and description thereof is omitted.
[0046]
According to the temperature sensor 1 having such a structure, since the extremely thin Ni foil resistor 11 is used, a resistor having a higher resistance value than that of the conventional Pt temperature sensor can be formed. Is easy to manufacture and can be miniaturized. That is, in the conventional Pt temperature sensor, when the resistance value is increased, the length of the Pt resistance wire is increased and the shape is inevitably increased. For this reason, the resistance value could not be increased to about 100Ω or more.
[0047]
On the other hand, the temperature sensor 1 according to the present invention is thin because the Ni foil manufactured by rolling is thinned by dry etching or wet etching and a predetermined resistance pattern is formed by photolithography. The Ni foil resistor 11 having a narrow pattern width and a high resistance value can be manufactured. For example, when the thickness of 3 μm is 2 μm, the resistance value can be increased by about 1.5 times. Accordingly, the pattern width can be about 6 μm, and the resistance value can be further increased by about 1.5 times. The resistance value can be increased to twice or more (1.5 × 1.5 = 2.25) by a synergistic effect. Therefore, it is possible to manufacture a resistor having a resistance value of 1,000Ω.
[0048]
In addition, the Ni foil resistor 11 is relatively easy to manufacture as compared with the Pt wire, and the temperature detecting element 4 itself can be formed in an elongated strip shape regardless of the high resistance value. The diameter of the 6 small-diameter pipe 6A can be reduced to 1.0 mm or less. As a result, the temperature sensor 1 itself can also be reduced in size. Furthermore, if the protective tube 6 can be formed thinly, the heat capacity is also reduced, so that the responsiveness to the temperature change of the measurement target can be improved.
[0049]
Further, since the pad portion 13 is formed thicker than the Ni foil resistor 11, the strength is high, and a good electrical connection can be obtained without peeling during the plating process, bump bonding or wire bonding. it can.
[0050]
[Comparison of Conventional Pt Temperature Sensor and Temperature Sensor of the Present Invention]
The conventional Pt temperature sensor has a resistance value of 100Ω, passes a measurement current of 1 to 2 mA, and extracts a temperature change output.
For example, when the current is 1 mA
Heat value of resistor (power consumption RI ² )
100x10 ^-3 × 10 ^-3 = 10 ^-Four W = 0.1 mW.
The sensitivity is pt TCR (temperature coefficient) = 3850 ppm / ° C.
The sensitivity at 1 ° C is
100x3850x10 ^-6 × 1 × 10 ^-3 = 385 μV / ° C
It becomes.
Since the sensitivity at 1 m ° C. is 1/1000, it becomes 0.385 μV / m ° C.
[0051]
On the other hand, when the Ni foil resistor 25 having a resistance value of 1,000Ω and TCR = 6000 ppm / ° C. is used, the resistance value becomes 10 times, so that the same sensitivity (temperature change output) can be obtained. The measurement current can be 0.064 mA, that is, 1/15.
0.385 × 10 ^-6 ÷ (1000 × 6000 × 10 ^-6 × 10 ^-3 × 10 ^-3 )
= 0.064 mA
The calorific value (power consumption) of the Ni foil resistor 25 is
1000x0.064x10 ^-3 × 0.064 × 10 ^-3 = 0.004 x 10 ^-3 It becomes 1/25 at W = 0.004 mW.
Therefore, increasing the resistance value can reduce power consumption while maintaining sensitivity, and is very effective when used in a semiconductor manufacturing apparatus that requires temperature control of 1 m ° C.
[0052]
In the above-described embodiment, the ceramic substrate 10 is used as the substrate of the temperature detection element 4, but the present invention is not limited to this, and a substrate made of glass, silicon, metal, or the like is used. Also good.
[0053]
【The invention's effect】
As described above, according to the temperature sensor of the present invention, the film thickness of the Ni foil resistor can be reduced, and the resistance value can be increased in size. Therefore, low power consumption is small and highly accurate temperature measurement can be performed, and it is particularly suitable for temperature measurement of a semiconductor manufacturing apparatus or the like that requires highly accurate temperature control. Further, peeling of the pad portion can be prevented and good electrical connection can be obtained. Furthermore, the Ni foil resistor can obtain a desired resistance value freely and inexpensively as compared with the Pt resistance wire.
Moreover, according to the manufacturing method of the temperature detection element which concerns on this invention, a thin Ni foil resistor with high resistance value can be manufactured easily.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an embodiment of a temperature sensor according to the present invention.
FIG. 2 is a sectional view of an element unit.
FIG. 3 is a plan view of a temperature detection element.
FIG. 4 is a flowchart showing a manufacturing procedure of the present invention.
FIG. 5 is a flowchart showing another manufacturing procedure of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Ni foil resistor temperature sensor, 2 ... Element unit, 3 ... Metal pipe, 4 ... Temperature detection element, 5 ... Flexible printed circuit board, 6 ... Protection tube, 7 ... External lead wire, 8 ... Hermetic component, 10 ... Ceramic Substrate, 11 ... Ni foil resistor, 13 ... pad part.

Claims (6)

A method of manufacturing a temperature detecting element in which a Ni foil resistor is bonded to a substrate,
An adhesion step of adhering Ni foil produced by rolling to the surface of the substrate with an adhesive;
An etching step of thinning the Ni foil to a predetermined thickness by wet etching or dry etching;
A resistor forming step of applying a resist to the Ni foil and forming a Ni foil resistor and a pad portion of a predetermined shape by photolithography and etching,
A method for manufacturing a temperature detecting element, comprising: A method of manufacturing a temperature detecting element in which a Ni foil resistor is bonded to a substrate,
An adhesion step of adhering Ni foil produced by rolling to the surface of the substrate with an adhesive;
A resistor forming step of applying a resist to this Ni foil and forming a Ni foil resistor and a pad portion of a predetermined shape by photolithography and etching,
An etching step of thinning the Ni foil resistor to a predetermined thickness by wet etching or dry etching;
A method for manufacturing a temperature detecting element, comprising: In the manufacturing method of the temperature detection element of Claim 1 or 2,
A method of manufacturing a temperature detecting element, wherein the thickness of the Ni foil resistor is 3 μm or less. In the manufacturing method of the temperature detection element of Claim 2,
A method of manufacturing a temperature detecting element, wherein the pad portion is masked and etched to leave the pad portion thicker than the Ni foil resistor. A temperature detection element in which a Ni foil resistor for temperature detection is bonded to a substrate and an elongated protective tube for housing the temperature detection element, and the Ni foil resistor is thinned to a thickness of 3 μm or less by etching. Temperature sensor. A temperature detection element in which a Ni foil resistor for temperature detection is joined to a substrate and an elongated protective tube for housing the temperature detection element are provided, and the Ni foil resistor is made thinner than the thickness of the pad portion by etching. Temperature sensor.

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