JP3739220B2 - Substrate processing method and apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
  In the present invention, a processing liquid is supplied from a nozzle in a state where the lower surface of a semiconductor substrate, a liquid crystal display substrate, a photomask glass substrate, an optical disk substrate or the like (hereinafter simply referred to as a substrate) is separated from a rotation support means. The present invention relates to a substrate processing method and apparatus for supplying and performing processing such as cleaning on the lower surface of the substrate.
[0002]
[Prior art]
  As a conventional substrate processing apparatus of this type, for example, a spin base that supports the substrate in a state in which the peripheral portion of the substrate is abutted and the lower surface of the substrate is spaced apart, and a central portion of the spin base is placed on the lower surface of the substrate. Toward this, there are those equipped with a nozzle that discharges only a treatment liquid containing chemical liquid or pure water at a constant flow rate. In the apparatus having such a configuration, the processing liquid supplied to the center of the lower surface of the substrate is expanded by centrifugal force by supplying the processing liquid from the nozzle at a constant large flow rate while rotating the spin base at a high speed, thereby lowering the lower surface of the substrate. The entire surface is covered, and dirt such as particles adhering to the lower surface of the substrate is cleaned and removed.
[0003]
[Problems to be solved by the invention]
  However, the conventional example having such a configuration has the following problems.
  That is, when the flow rate is greatly displaced, such as when the processing liquid starts to be discharged from the nozzle or when the discharge is stopped, the processing liquid from the nozzle is temporarily directed toward the lower surface of the substrate. In this case, the nozzle itself and its surrounding spin base may be contaminated by the chemical liquid contained in the processing liquid. In this way, if processing is continued in a state where the nozzle itself and the spin base are contaminated with the chemical solution, the substrate that has been cleaned by the processing solution is contaminated because the drying process is performed in a contaminated atmosphere during subsequent spin drying. There is a problem that it ends up.
[0004]
  The present invention has been made in view of such circumstances, and a substrate that can clean a contaminated portion by devising the rotation speed and flow rate and prevent the processed substrate from being contaminated. It is an object of the present invention to provide a processing method and apparatus.
[0005]
[Means for Solving the Problems]
  In order to achieve such an object, the present invention has the following configuration.
  That is, the method invention described in claim 1 supports the substrate on the rotation support means so that the lower surface of the substrate is separated from the upper surface of the rotation support means, and rotates the substrate integrally with the rotation support means. ,Placed below the boardFrom the nozzleOn the bottom of the boardAfter the first process of supplying the processing liquid, and after the first process, the substrate rotation speed is slower than that in the first process, and the pure water flow rate is higher than the processing liquid flow rate in the first process. LessIn state, Discharging pure water from the nozzleBelow the boardAnd a second process of cleaning the rotation support means and the nozzle.
[0006]
  According to a second aspect of the present invention, the substrate is supported on the rotation support means so that the lower surface of the substrate is separated from the upper surface of the rotation support means, and the substrate is rotated integrally with the rotation support means. A first process of supplying a processing liquid from a nozzle disposed below the substrate to a lower surface of the substrate, the umbrella-shaped blocking member shielding the upper side of the gas jet port at the upper end, and the first process Thereafter, the pure water is discharged from the nozzle in at least one of a state in which the substrate rotation speed is slower than that in the first step and a state in which the pure water flow rate is lower than the processing liquid flow rate in the first step. And a second process in which pure water from the nozzle flows down and is washed down the upper surface of the blocking member of the nozzle to wash the rotation support means and the nozzle.
[0007]
  Claims3The method invention described in claim 1Or claim 2In the substrate processing method according to claim 3, after the second step, the substrate is rotated integrally with the rotation support unit, and pure water is supplied from the nozzle to the lower surface of the substrate to clean the lower surface of the substrate. The process is carried out.
[0008]
  Claims4The apparatus invention described in the above, rotation support means for rotatably supporting the substrate in a state where the lower surface of the substrate is separated,Provided below the substrate,A nozzle that supplies processing liquid and pure water sequentially from below the substrate supported by the rotation support means, and a predetermined amount of the processing liquid is supplied from the nozzle while rotating the rotation support means and the substrate integrally. After processing the bottom surface of the substrate, the rotational speed and flowAmountIn a state lower than the treatment, supplying pure water from the nozzle,Below the boardThe rotation support means and a control means for controlling to perform a process of cleaning the nozzle.
[0009]
  According to a fifth aspect of the present invention, the upper end portion of the apparatus has a rotation support means for rotatably supporting the substrate with the lower surface of the substrate spaced apart, and an umbrella-shaped blocking member for shielding the upper part of the gas outlet. A nozzle for supplying processing liquid and pure water sequentially from below the substrate supported by the rotation support means, and supplying a predetermined amount of the processing liquid from the nozzle while rotating the rotation support means and the substrate integrally. Then, after processing the lower surface of the substrate, pure water is supplied from the nozzle in a state where at least one of the rotation speed and the flow rate is lower than that in the processing, and the rotation support means and the nozzle below the substrate are cleaned. Control means for controlling to perform processing, wherein the control means causes the pure water from the nozzle to flow down and wash down the upper surface of the shielding member.Is.
[0010]
  Claims6The device invention described in claim4 or claim 5The substrate processing apparatus according to claim 1, further comprising supply means for selectively supplying a treatment liquid and pure water to the nozzle, wherein the supply means includes a pipe communicating with the nozzle and a first pipe for supplying pure water to the pipe. 1 pure water supply source, first flow rate adjusting means for adjusting the flow rate of pure water from the first treatment liquid supply source to the pipe, and a second pure water supply for supplying pure water to the pipe. Source, second flow rate adjusting means for adjusting the flow rate of pure water from the second pure water supply source to the pipe to be smaller than the flow rate of the first flow rate adjusting means, and the first flow rate And a chemical solution injection means for injecting a chemical solution into the pipe downstream from the adjustment means and the second flow rate adjustment means, and when the control means processes the lower surface of the substrate, the first pure water While supplying pure water from the supply source and the second pure water supply source, When the chemical liquid is injected from the liquid injection means to supply a processing liquid obtained by mixing pure water and the chemical liquid, and the nozzle is cleaned, the rotation support means processes the lower surface of the substrate. When rotating only the pure water from the second pure water supply source and cleaning the rotation support means, the rotation support means is more than when processing the lower surface of the substrate. Further, the supply means is controlled so as to rotate at a low speed and supply only pure water from the first pure water supply source.
[0011]
  Claims7The device invention described in claim4 or claim 5The substrate processing apparatus according to claim 1, further comprising a supply unit that selectively supplies a processing solution and pure water to the nozzle, the supply unit including a pipe communicating with the nozzle and a pure water that supplies pure water to the pipe. A water supply source, a flow rate adjusting means for adjusting the flow rate of pure water from the pure water supply source to the pipe, and a chemical liquid injection means for injecting a chemical liquid into the pipe that is downstream of the flow rate adjusting means, When processing the lower surface of the substrate, the control means supplies the pure water by setting the flow rate adjusting means to the first pure water flow rate, and injects the chemical solution from the chemical solution injection means, When supplying the processing liquid obtained by mixing water and chemical liquid and cleaning the nozzle, the rotation support means is rotated at a lower speed than when the lower surface of the substrate is processed, and the flow rate adjustment is performed. Means for the first pure water When only the pure water is supplied with the second pure water flow rate smaller than the amount and the rotation support means is washed, the flow rate adjusting means is less than the first pure water flow rate and the second pure water flow rate. The supply means is controlled so as to supply only pure water at a third pure water flow rate higher than the pure water flow rate.
[0012]
  According to an eighth aspect of the present invention, there is provided a rotation support means for rotatably supporting a substrate with the lower surface of the substrate being spaced apart, and a treatment liquid and pure water from below the substrate supported by the rotation support means. A predetermined amount of processing liquid is supplied from the nozzle while rotating the rotation supporting means and the substrate integrally with the nozzle. Then, after the lower surface of the substrate is processed, pure water is supplied from the nozzle in a state where at least one of the rotation speed and the flow rate is lower than the processing, and the rotation supporting means and the nozzle are cleaned. Control means for controlling the pipe, the supply means communicating with the nozzle, a first pure water supply source for supplying pure water to the pipe, and the pipe from the first processing liquid supply source. Pure water flow to A first flow rate adjusting means for adjusting the flow rate, a second pure water supply source for supplying pure water to the pipe, and a flow rate of pure water from the second pure water supply source to the pipe. Second flow rate adjusting means for adjusting the flow rate to be smaller than the flow rate of the flow rate adjusting means, and chemical solution injecting means for injecting the chemical solution into the pipe located downstream of the first flow rate adjusting means and the second flow rate adjusting means And the control means supplies pure water from the first pure water supply source and the second pure water supply source when processing the lower surface of the substrate, and supplies the chemical liquid from the chemical liquid injection means. When the nozzle is cleaned by supplying a treatment liquid obtained by mixing pure water and a chemical solution by injecting the rotation support means at a lower speed than when treating the lower surface of the substrate. While rotating, only pure water is supplied from the second pure water supply source. When cleaning the rotation support means, the rotation support means is rotated at a lower speed than when the lower surface of the substrate is processed, and only pure water is supplied from the first pure water supply source. The supply means is controlled.
[0013]
  According to a ninth aspect of the present invention, there is provided a rotation support means for rotatably supporting a substrate with the lower surface of the substrate spaced apart, and a treatment liquid and pure water from below the substrate supported by the rotation support means. A predetermined amount of processing liquid is supplied from the nozzle while rotating the rotation supporting means and the substrate integrally with the nozzle. Then, after the lower surface of the substrate is processed, pure water is supplied from the nozzle in a state where at least one of the rotation speed and the flow rate is lower than the processing, and the rotation supporting means and the nozzle are cleaned. Control means for controlling, the supply means, a pipe communicating with the nozzle, a pure water supply source for supplying pure water to the pipe, and a flow rate of pure water from the pure water supply source to the pipe To adjust the flow Adjusting means, and chemical solution injection means for injecting a chemical solution into the pipe downstream from the flow rate adjusting means, and the control means sets the flow rate adjusting means to the first flow rate when processing the lower surface of the substrate. When pure water is supplied with the pure water flow rate set, and when the chemical liquid is injected from the chemical liquid injection means, a treatment liquid obtained by mixing pure water and the chemical liquid is supplied and the nozzle is cleaned. The rotation support means is rotated at a lower speed than when the lower surface of the substrate is processed, and the flow rate adjusting means is set to a second pure water flow rate smaller than the first pure water flow rate. When supplying only water and washing the rotation support means, the flow rate adjusting means is set to a third pure water flow rate that is less than the first pure water flow rate and greater than the second pure water flow rate. The supply means to supply only pure water It is characterized in that Gosuru.
[0014]
[Action]
  The effect | action of the method invention of Claim 1 is as follows.
  From the nozzle located below the substrateAfter the first process of supplying the processing liquid to the lower surface of the substrate, the rotational speed and flowAmountA second process is performed in which only pure water is supplied from the nozzle in a state of lower than that during processing of the substrate. Rotational speedButLow speed (including stop)BecauseSince the centrifugal force is very small, even if the pure water supplied from the nozzle reaches the lower surface of the substrate, it falls on the nozzle and the rotation support means at the center before spreading toward the peripheral edge of the substrate. It flows out to the surroundings. Also flow rateButLower flow rate than when processing substratesBecauseThe pure water hardly flows upward from the nozzle and flows down to the surroundings by flowing down the nozzle itself and the rotation support means. Therefore, it is possible to clean the nozzle and the rotation support means that are contaminated with the chemical during the substrate processing with pure water.
[0015]
  The effect | action of the method invention of Claim 2 is as follows.
  An umbrella-shaped blocking member that shields the upper side of the gas outlet is provided at the upper end, and after the first step of supplying the processing liquid to the lower surface of the substrate from a nozzle disposed below the substrate, at least the rotational speed and the flow rate A second process of supplying only pure water from the nozzle is performed in a state in which either one is lower than the substrate processing time. If the rotation speed is set to a low speed (including stop), the centrifugal force is very small, so even if the pure water supplied from the nozzle reaches the lower surface of the substrate, it will be centered before spreading toward the peripheral edge of the substrate. It falls on the nozzle and rotation support means at the part and flows out to the surroundings. Further, if the flow rate is set to a lower flow rate than that at the time of processing the substrate, pure water is hardly discharged from the nozzle and flows down to the surroundings by flowing down the nozzle itself and the rotation support means. Therefore, it is possible to clean the nozzle and the rotation support means that are contaminated with the chemical during the substrate processing with pure water. In addition, since the nozzle is provided with an umbrella-shaped blocking member, it is possible to prevent the processing liquid from flowing into the gas outlet and to appropriately guide the processing liquid to the upper surface of the rotation support means.
[0016]
  Claims3According to the method invention described in the above, the third process of cleaning the back surface of the substrate in a clean state is performed by supplying pure water to the lower surface of the substrate after the second process of rotating support means / nozzle cleaning. Can do.
[0017]
  Claims4The operation of the device invention described in 1 is as follows.
  The control means supplies the processing liquid to the lower surface of the substrate and performs processing, and then the rotational speed and flow rate.AmountIn a state lower than the previous processing, Provided below the substrateControl is performed so that only pure water is supplied from the nozzle. Rotational speedButLower than during processingBecauseEven if pure water supplied from the nozzle reaches the lower surface of the substrate, it flows down to the periphery of the nozzle or the rotation support means at the center. Also flow rateButLower flow rate than processingBecauseThe pure water hardly flows upward from the nozzle and flows down to the surroundings by flowing down the nozzle itself and the rotation support means. Therefore, it is possible to clean the nozzles and the rotation support means that are contaminated with the chemical during the processing of the substrate.
[0018]
  The operation of the device invention according to claim 5 is as follows.
  The control means performs the processing by supplying the processing liquid to the lower surface of the substrate, and then shields the upper part of the gas jet port with at least one of the rotational speed and the flow rate being lower than the previous processing. The blocking member is provided at the upper end, and control is performed so that only pure water is supplied from a nozzle disposed below the substrate. If the rotation speed is lower than that during processing, even if pure water supplied from the nozzle reaches the lower surface of the substrate, it flows down to the periphery of the nozzle and the rotation support means at the center. If the flow rate is set lower than that at the time of processing, pure water is hardly discharged upward from the nozzle and flows down to the surroundings by flowing down the nozzle itself and the rotation support means. Therefore, it is possible to clean the nozzles and the rotation support means that are contaminated with the chemical during the processing of the substrate. In addition, since the nozzle is provided with an umbrella-shaped blocking member, it is possible to prevent the processing liquid from flowing into the gas outlet and to appropriately guide the processing liquid to the upper surface of the rotation support means.
[0019]
  Claims6According to the apparatus invention described in (4), when processing the lower surface of the substrate, the control means supplies pure water from the first pure water supply source and the second pure water supply source, and from the chemical solution injection means. The supply means is controlled to inject the chemical liquid into the pipe and supply the processing liquid from the nozzle to the substrate. Therefore, the flow rate of the processing liquid at this time is the sum of the flow rates of the first flow rate adjusting means and the second flow rate adjusting means for adjusting the flow rates of the first pure water supply source and the second pure water supply source. Therefore, the maximum flow rate is suitable for processing the substrate.
[0020]
  Further, when cleaning the nozzle, the rotation support means is rotated at a lower speed than during the substrate processing, and the supply means is controlled so as to supply only pure water from the second pure water supply source. Therefore, the flow rate of the processing liquid at this time is only the flow rate by the second flow rate adjusting means for adjusting the flow rate of the second pure water supply source, and is the minimum flow rate suitable for nozzle cleaning.
[0021]
  Further, when cleaning the rotation support means, the rotation support means is rotated at a lower speed than during the substrate processing, and the supply means is controlled so as to supply only pure water from the first pure water supply source. Therefore, the flow rate of the processing liquid at this time is only the flow rate by the first flow rate adjusting means for adjusting the flow rate of the first pure water supply source, and is an intermediate flow rate suitable for the rotation support means.
[0022]
  ThereforeBy controlling the supply means as described above, the control means can clean the nozzles and the rotation support means that are contaminated with the chemical after the substrate is processed.
[0023]
  Claims7According to the apparatus invention described above, when processing the lower surface of the substrate, the control means sets the flow rate of pure water to the first pure water flow rate suitable for substrate processing by the flow rate adjusting means from the pure water supply source. While supplying, the supply means is controlled so as to inject the chemical liquid from the chemical liquid injection means into the pipe and supply the processing liquid from the nozzle to the substrate.
[0024]
  Further, when cleaning the nozzle, the rotation support means is rotated at a lower speed than when the substrate is processed, and the flow rate adjusting means is adjusted to a second flow rate smaller than the first pure water flow rate, and the nozzle cleaning is performed. The supply means is controlled so as to supply only pure water from the pure water supply source at an appropriate flow rate.
[0025]
  Further, when cleaning the rotation support means, the rotation support means is rotated at a lower speed than when the substrate is processed, and the flow rate adjusting means is smaller than the first pure water flow rate and larger than the second pure water flow rate. The supply means is controlled to supply only pure water from the pure water supply source at the third flow rate.
[0026]
  Therefore, when the control means controls the supply means as described above, the maximum first pure water flow rate during the substrate processing, the minimum second pure water flow rate during the nozzle cleaning, and the intermediate during the cleaning of the rotation support means. The third pure water flow rate and the flow rate suitable for each process can be set, and after the substrate is processed, the nozzles and the rotation support means that are contaminated with the chemical solution can be cleaned.
[0027]
  According to the apparatus invention of claim 8, the control means supplies pure water from the first pure water supply source and the second pure water supply source when processing the lower surface of the substrate. Then, the supply means is controlled so that the chemical liquid is injected from the chemical liquid injection means into the pipe and the processing liquid is supplied from the nozzle to the substrate. Therefore, the flow rate of the processing liquid at this time is the sum of the flow rates of the first flow rate adjusting means and the second flow rate adjusting means for adjusting the flow rates of the first pure water supply source and the second pure water supply source. Therefore, the maximum flow rate is suitable for processing the substrate. Further, when cleaning the nozzle, the rotation support means is rotated at a lower speed than during the substrate processing, and the supply means is controlled so as to supply only pure water from the second pure water supply source. Therefore, the flow rate of the processing liquid at this time is only the flow rate by the second flow rate adjusting means for adjusting the flow rate of the second pure water supply source, and is the minimum flow rate suitable for nozzle cleaning. Further, when cleaning the rotation support means, the rotation support means is rotated at a lower speed than during the substrate processing, and the supply means is controlled so as to supply only pure water from the first pure water supply source. Therefore, the flow rate of the processing liquid at this time is only the flow rate by the first flow rate adjusting means for adjusting the flow rate of the first pure water supply source, and is an intermediate flow rate suitable for the rotation support means. Therefore, the control means controls the supply means as described above, so that the nozzles and the rotation support means that are contaminated with the chemical solution can be cleaned after the substrate is processed.
[0028]
  According to the apparatus invention of claim 9, when the control means processes the lower surface of the substrate, the flow rate adjusting means sets the flow rate of pure water to the first pure water flow rate suitable for substrate processing. While supplying from a pure water supply source, a supply means is controlled so that a chemical | medical solution may be inject | poured into piping from a chemical | medical solution injection | pouring means, and a process liquid may be supplied to a board | substrate from a nozzle. Further, when cleaning the nozzle, the rotation support means is rotated at a lower speed than when the substrate is processed, and the flow rate adjusting means is adjusted to a second flow rate smaller than the first pure water flow rate, and the nozzle cleaning is performed. The supply means is controlled so as to supply only pure water from the pure water supply source at an appropriate flow rate. Further, when cleaning the rotation support means, the rotation support means is rotated at a lower speed than when the substrate is processed, and the flow rate adjusting means is smaller than the first pure water flow rate and larger than the second pure water flow rate. The supply means is controlled to supply only pure water from the pure water supply source at the third flow rate. Therefore, when the control means controls the supply means as described above, the maximum first pure water flow rate during the substrate processing, the minimum second pure water flow rate during the nozzle cleaning, and the intermediate during the cleaning of the rotation support means. The third pure water flow rate and the flow rate suitable for each process can be set, and after the substrate is processed, the nozzles and the rotation support means that are contaminated with the chemical solution can be cleaned.
[0029]
DETAILED DESCRIPTION OF THE INVENTION
  An embodiment of the present invention will be described below with reference to the drawings.
  FIG. 1 is a block diagram showing a schematic configuration of a substrate processing apparatus according to the present invention, and FIG. 2 is a block diagram showing a schematic configuration of a supply mechanism in FIG.
[0030]
  The hollow rotating shaft 1 is configured to be rotatable around a vertical axis by an electric motor 3. A disc-shaped spin base 5 is integrally connected to the upper end of the rotating shaft 1. Near the periphery of the spin base 5, a plurality of support pins 7 that stand and hold the outer peripheral end of the substrate W are provided upright. The substrate W is horizontally supported by these support pins 7 while floating from the upper surface of the spin base 5. The spin base 5 corresponds to the rotation support means of the present invention.
[0031]
  Above the spin base 5, an upper cleaning nozzle 9 that supplies a cleaning liquid toward the vicinity of the rotation center on the upper surface of the substrate W and an upper gas nozzle 11 that supplies an inert gas such as nitrogen gas or a gas such as dry air are arranged. ing. The upper cleaning nozzle 9 is connected to a cleaning liquid supply source 15 through an on-off valve 13, and the cleaning liquid is supplied from the upper cleaning nozzle 9 by opening / closing control of a control unit 17 corresponding to control means. The upper gas nozzle 11 is connected to a gas supply source 21 through an on-off valve 19 and is configured to supply gas from the upper gas nozzle 11 in accordance with the opening / closing control of the control unit 17.
[0032]
  In the hollow portion of the rotating shaft 1, a lower cleaning liquid nozzle 23 corresponding to the nozzle of the present invention is erected coaxially. A supply mechanism 27 corresponding to the supply means of the present invention is communicated with the lower cleaning liquid nozzle 23 via a pipe 25.
[0033]
  The supply mechanism 27 will be described with reference to FIG.
  A first pure water supply source 29 for supplying pure water is communicated with one end side of the pipe 25, and the flow rate thereof is adjusted by a pressure regulator 31. A flow meter 33 is disposed on the downstream side of the pressure regulator 31, and the control unit 17 obtains a difference from a preset flow rate (first flow rate FV1), and a command voltage based on the difference is obtained. The electropneumatic converter 35 adjusts the air pressure to the pressure adjuster 31 accordingly. The other end side of the pipe 25 is connected to the lower cleaning nozzle 23. The first pure water supply source 29 corresponds to the first pure water supply source of the present invention, and the pressure regulator 31 corresponds to the first flow rate adjusting means.
[0034]
  A chemical solution injection part 37 corresponding to the chemical solution injection means of the present invention is disposed downstream of the flow meter 33. The chemical liquid injection unit 37 is configured such that the amount of each fluid injected into the pipe 25 can be independently adjusted by flow rate control valves 39, 41, and 43 that function as an on-off valve and a flow rate control valve. In addition, an on-off valve 45 for opening and closing the pipe 25 is provided on the downstream side of the flow meter 33.
[0035]
  The flow rate control valve 39 communicates with the first chemical solution supply source 47 to adjust the injection amount of the first chemical solution into the pipe 25, and the flow rate adjustment valve 41 communicates with the second chemical solution supply source 49. The injection amount of the second chemical liquid into the pipe 25 is adjusted. The flow rate adjusting valve 43 (second flow rate adjusting means) communicates with the second pure water supply source 51 and adjusts the flow rate of the pure water to the pipe 25.
[0036]
  The above-described opening / closing control of the flow rate control valves 39, 41, 43 and the opening / closing valve 45 is controlled by the control unit 17 in an integrated manner. The flow rate control valves 39, 41, and 43 are set in advance so as to have a certain flow rate. In particular, the flow rate of the second flow rate control valve 43 is a first level set in advance by the pressure regulator 31. The second flow rate FV2 is less than the first flow rate FV1, and is adjusted in advance.
[0037]
  Although details will be described later, when the cleaning process is performed on the lower surface of the substrate W, the control unit 17 opens the on-off valve 45, and the pressure regulator 31 sets the first flow rate FV1 via the electropneumatic converter 35. The pure water from the first pure water supply source 29 adjusted in this way is supplied to the pipe 25, and the flow rate adjustment valve 43 adjusts the second flow rate FV2 to be smaller than the first flow rate FV1. Pure water from two pure water supply sources 51 is injected into the pipe 25. Further, a required amount of the first or / and second chemical solution is injected through the flow rate control valves 39 and 41. Accordingly, a cleaning liquid (processing liquid) obtained by mixing a required amount of a chemical solution with a large flow rate of pure water, which is a combination of the first flow rate FV1 and the second flow rate FV2, is supplied to the lower surface of the substrate W. Yes.
[0038]
  Further, when cleaning the ejection part of the lower cleaning nozzle 23 or the shielding member 63 to which the cleaning liquid has adhered, the on-off valve 45 and the flow rate control valves 39 and 41 are closed, and the flow rate control valve 43 causes the first flow rate FV1 to be closed. In addition, only pure water from the second pure water supply source 51 adjusted to be the second flow rate FV2 having a small flow rate is injected into the pipe 25.
[0039]
  Further, when cleaning the upper surface of the spin base 5 to which the cleaning liquid is adhered, the on-off valve 45 is opened and the flow rate control valves 39, 41, 43 are closed, and the first flow rate FV1 (this is controlled by the pressure regulator 31). In the example, only pure water from the first pure water supply source 29 adjusted to be 2.4 liters / minute) is supplied to the pipe 25. That is, the flow rate of the cleaning liquid or pure water supplied from the lower cleaning nozzle 23 can be varied according to the three processing modes of the substrate cleaning process, the lower cleaning nozzle 23 cleaning, and the spin base 5 cleaning. It is like that.
[0040]
  In addition, a gas supply path 53 is formed in a space between the inner peripheral surface of the rotating shaft 1 and the lower cleaning nozzle 23, and a tip portion of the gas supply path 53 functions as a gas ejection port 55. Gas is supplied to the space between the base 5. The gas outlet 55 is connected to the gas supply source 61 through an on-off valve 57 and a flow rate control valve 59 controlled by the control unit 17.
[0041]
  Further, an umbrella-shaped blocking member 63 is attached to the upper end portion of the lower cleaning nozzle 23 described above. The blocking member 63 is formed in a shape so as to cover the upper side of the gas ejection port 55, and the upper surface is inclined so as to descend from the ejection part 65 toward the peripheral part. The gas ejected from the gas ejection port 55 is supplied to the space between the lower surface of the substrate W and the upper surface of the spin base 5 through a gap between the lower surface of the blocking member 63 and the upper surface of the spin base 5 and is not shown. Is supplied directly from the large number of small holes formed in the blocking member 63 toward the lower surface of the substrate W.
[0042]
  The operation of the apparatus configured as described above will be described with reference to the flowchart of FIG. 3 and the schematic diagram of FIG. The description of the operations of the upper cleaning nozzle 9 and the upper gas nozzle 11 provided above the substrate W is omitted.
[0043]
  Step S1 (substrate cleaning)
  The control unit 17 controls the rotation of the motor 3 to rotate the substrate W at a high speed at the first rotation speed. The rotation speed (rotation speed) at this time is, for example, about 600 rpm. At the same time, the on-off valve 45 is opened, and the first pure water supply adjusted to the first flow rate FV1 (for example, 2.4 liters / min) by the pressure regulator 31 through the electropneumatic converter 35. The pure water from the source 29 is supplied to the pipe 25, and from the second pure water supply source 51 that is adjusted by the flow rate control valve 43 so that the second flow rate FV2 (for example, 0.5 liter / min) is obtained. Of pure water is injected into the pipe 25. Further, a required chemical solution is injected at a predetermined flow rate through the flow rate control valves 39 and 41, and a pure flow of a large flow rate (in this example, 2.9 liters / minute) that combines the first flow rate FV1 and the second flow rate FV2. A cleaning liquid obtained by mixing a chemical with water is supplied to the lower surface of the substrate W.
[0044]
  Therefore, as shown in FIG. 4A, the cleaning liquid supplied at a large flow rate (2.9 liters / minute) is ejected from the jetting portion 65 to the lower surface of the substrate W with a strong centrifugal force. The lower surface of the substrate W is moved toward the peripheral edge by force and scattered around. At this time, the droplets of the cleaning liquid CS including the chemical liquid and the droplets P including particles adhering to the lower surface of the substrate W adhere to the blocking member 63 of the lower cleaning nozzle 23 and the upper surface of the spin base 5.
[0045]
  This step S1 corresponds to the first process of the present invention.
[0046]
  Step S2 (substrate pure water rinse)
  The control unit 17 closes the flow rate control valves 39 and 41 and stops the injection of both chemical solutions while maintaining the first rotational speed in step S1. Therefore, as shown in FIG. 4A, only pure water DIW is supplied to the substrate W at a high flow rate (2.9 liters / minute) from the lower cleaning nozzle 23 while rotating at high speed. Only the lower surface of the substrate W is rinsed with pure water. However, at this time, as shown in FIG. 4A, the droplet P remains attached to the blocking member 63 of the lower cleaning nozzle 23 and the upper surface of the spin base 5.
[0047]
  Step S3 (nozzle pure water rinse)
  The controller 17 decelerates the rotation speed of the motor 3 to a second rotation speed (for example, 20 rpm) lower than the first rotation speed, closes the on-off valve 45, and controls the electropneumatic converter 35. Stop and open the flow control valve 43. As a result, only the pure water DIW is supplied to the lower cleaning nozzle 23 at a second flow rate FV2 (0.5 liter / min) smaller than the first flow rate FV1. Accordingly, as shown in FIG. 4B, the pure water DIW supplied at a small flow rate flows down the shielding member 63 of the lower cleaning nozzle 23 without going upward, and the spin base 5 is moved to the peripheral portion by a weak centrifugal force. Flow down toward and scatter around. At this time, the droplets P adhering mainly to the jet port 65 and the shielding member 63 of the lower cleaning nozzle 23 are washed away.
[0048]
  Step S4 (spin base pure water rinse)
  The rotational speed of the motor 3 is reduced to a third rotational speed (for example, 10 rpm) that is lower than the second rotational speed, the flow control valve 43 is closed, the on-off valve 45 is opened, and the pressure regulator 31 Resume control. Thereby, only the pure water DIW is supplied to the lower cleaning nozzle 23 at the first flow rate FV1 (2.4 liter / min). Therefore, as shown in FIG. 4C, the pure water DIW discharged from the jet part 65 of the lower cleaning nozzle 23 is directed to the lower surface of the substrate W, and from the center of rotation to the periphery due to the upward force and weak centrifugal force. Although it expands somewhat toward the part, when it expands to some extent, it falls onto the spin base 5 and flows down to the periphery. As a result, the droplets P attached to the spin base 5 are washed away.
[0049]
  In addition, said step S3 and step S4 are equivalent to a 2nd process.
[0050]
  Step S5 (substrate pure water rinse)
  While increasing the rotation speed to the first rotation speed (600 rpm), the flow rate adjusting valve 43 is opened. Therefore, as shown in FIG. 4A, only pure water DIW is supplied to the substrate W at a high flow rate (2.9 liters / minute) from the lower cleaning nozzle 23 while rotating at a high speed. Only the lower surface of is rinsed with pure water.
[0051]
  This step S5 corresponds to the third process of the present invention.
[0052]
  Step S6 (spin dry)
  The flow control valve 43 is closed, the control of the pressure regulator 31 is stopped, the open / close valve 45 is closed, and the supply of pure water from the lower cleaning nozzle 23 is stopped. Then, the on-off valve 57 is opened, and an inert gas adjusted to an appropriate flow rate by the flow rate adjusting valve 59 is supplied from the gas supply path 53 toward the lower surface of the substrate W. Then, the rotation of the motor 3 is set to a fourth rotation speed (3,000 rpm) higher than the first rotation speed. As a result, the inert gas is supplied to the substrate W while idling at high speed, and the substrate W is dried and dried.
[0053]
  As described above, when the lower surface of the substrate is processed (FIG. 4A), the cleaning liquid CS is supplied at the maximum flow rate, and when the lower cleaning nozzle 23 is cleaned (FIG. 4B), Since pure water DIW is supplied at a minimum flow rate while rotating at a low speed and the spin base 5 is cleaned (FIG. 4C), it is rotated at a low speed and pure water DIW is supplied at an intermediate flow rate. The lower cleaning nozzle 23 and the spin base 5 can be cleaned only by relatively simple control such as activation / deactivation of the motor 3 and the flow rate regulating valves 39, 41, 43, the pressure regulator 31, and the opening / closing valve 45. . Therefore, the lower cleaning nozzle 23 and the spin base 5 that are soiled with the chemical solution during the processing of the substrate W can be cleaned with pure water, and the substrate W is contaminated by the chemical solution that has adhered during the subsequent spin dry processing. Can be prevented.
[0054]
  <Modification>
  In the above embodiment, the supply mechanism 27 is configured as shown in FIG. 2, and a large flow rate (2.4 liters / minute), a small flow rate (0.5 liters / minute), and a medium flow rate (2.4 liters). The flow rate is adjusted in three steps in the order of / min), but the supply mechanism 27 may be configured as shown in FIG.
[0055]
  That is, pure water is supplied only from the pure water supply source 29 communicating with the pipe 25, and the flow rate of pure water is adjusted only by the pressure regulator 31 (flow rate adjusting means) provided in the pipe 25. . The control unit 17 is preset with command voltages corresponding to three types of first to third (large, medium and small) pure water flow rates, and switches the command voltage according to the processing mode, so that three types of pure water flow rates are set. Adjust to (Large, Medium and Small). During the cleaning process, the flow rate control valves 39 and 41 are adjusted to inject a chemical solution into a large amount of pure water, and supply the cleaning solution to the lower cleaning nozzle 23. While adopting such a configuration, the control unit 17 controls the motor 3 to vary the rotation speed according to the processing mode, so that the same effect as the above-described embodiment can be obtained. In this modification, since the flow rate adjustment operation is performed by one pressure regulator 31, the other pure water supply source (51) and the flow rate adjustment valve (43) are unnecessary, and the configuration is relatively simple. be able to.
[0056]
  In the above-described embodiment apparatus, when the lower cleaning nozzle 23 and the spin base 5 are rinsed, both the rotation speed of the substrate W and the flow rate of the pure water DIW are set lower than those during the cleaning of the substrate W. Even if only one of them is lowered, the same effect as the above-described processing can be obtained.
[0057]
【The invention's effect】
  As is clear from the above description, according to the method invention of claim 1,From the nozzle located below the substrateAfter supplying the processing liquid to the bottom surface of the substrate and performing processing, the rotational speed and flowAmountBy supplying only pure water from the nozzle in a state lower than that during substrate processing, the pure water is dropped on the nozzle and the rotation support means at the center of the lower surface of the substrate, or the pure water is rotated by the nozzle itself and rotation. It can flow down to the support means. Therefore, the nozzle and the rotation support means that are contaminated with the chemical solution during the substrate processing can be cleaned with pure water, and the problem that the substrate is contaminated by the chemical solution that has adhered during the subsequent spin dry processing is prevented. be able to.
[0058]
  According to the method of the present invention, after the processing liquid is supplied to the lower surface of the substrate and the processing is performed, at least one of the rotational speed and the flow rate is set lower than that during the processing of the substrate. By supplying only pure water from the nozzle, the pure water can be dropped on the nozzle or the rotation support means at the center of the lower surface of the substrate, or the pure water can flow down to the nozzle itself or the rotation support means. Therefore, the nozzle and the rotation support means that are contaminated with the chemical solution during the substrate processing can be cleaned with pure water, and the problem that the substrate is contaminated by the chemical solution that has adhered during the subsequent spin dry processing is prevented. be able to. In addition, since the nozzle is provided with an umbrella-shaped blocking member, it is possible to prevent the processing liquid from flowing into the gas outlet and to appropriately guide the processing liquid to the upper surface of the rotation support means.
[0059]
  Claims3According to the method invention described in (4) above, by supplying pure water to the lower surface of the substrate after the rotation support means / nozzle cleaning process, the processing of the back surface of the substrate can be finished in a clean state.
[0060]
  Claims4According to the apparatus invention described in Item 1, the substrate processing method described in Item 1 can be suitably implemented.
[0061]
  Moreover, according to the apparatus invention of Claim 5, the substrate processing method of Claim 2 can be implemented suitably.
[0062]
  Claims6When processing the lower surface of the substrate, the processing liquid is supplied at the maximum flow rate by the first flow rate adjusting means and the second flow rate adjusting means, and the nozzle is cleaned. Rotating at a low speed and supplying pure water at a minimum flow rate by the second flow rate adjusting means, and cleaning the rotation support means, rotating at a low speed and supplying pure water at an intermediate flow rate by the first flow rate adjusting means. Since the supply is performed, the nozzle and the rotation support means can be cleaned only by relatively simple control such as the number of rotations of the substrate support means and the operation / non-operation of the first and second flow rate adjustment means.
[0063]
  Claims7According to the apparatus invention described in the above, when processing the lower surface of the substrate, the flow rate adjusting means supplies the processing liquid with the first pure water flow rate, and when cleaning the nozzle, the nozzle is rotated at a low speed and the flow rate is adjusted. When the adjustment means is used to supply only pure water at a second pure water flow rate less than the first pure water flow rate and the rotation support means is washed, the rotation support means is rotated at a low speed and the first pure water is supplied by the flow rate adjustment means. Since the flow rate adjusting operation is performed by one flow rate adjusting means so that only pure water is supplied at a flow rate smaller than the second flow rate and larger than the second pure water flow rate, the nozzle has a relatively simple configuration. And the rotation support means can also be cleaned.
[0064]
  According to the apparatus invention of claim 8, when processing the lower surface of the substrate, the processing liquid is supplied at the maximum flow rate by the first flow rate adjusting means and the second flow rate adjusting means, and the nozzle is When cleaning, rotate at a low speed and supply pure water at a minimum flow rate by the second flow rate adjusting means, and when cleaning the rotation support means, rotate at a low speed and perform an intermediate operation by the first flow rate adjusting means. Since pure water is supplied at a flow rate, the nozzles and the rotation support means can be cleaned only by relatively simple control such as the number of rotations of the substrate support means and the operation / non-operation of the first and second flow rate adjustment means. can do.
[0065]
  According to the apparatus invention of claim 9, when processing the lower surface of the substrate, when supplying the processing liquid to the first pure water flow rate by the flow rate adjusting means and cleaning the nozzle, When rotating at low speed and supplying only pure water at a second pure water flow rate lower than the first pure water flow rate by the flow rate adjusting means and cleaning the rotation support means, the rotation support means is rotated at a low speed and the flow rate adjusting means at the flow rate adjusting means. Since the flow rate adjusting operation is performed by one flow rate adjusting means so as to supply only pure water at a flow rate smaller than the first pure water flow rate and larger than the second pure water flow rate, The nozzle and the rotation support means can be cleaned with a simple configuration.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view showing a schematic configuration of a substrate processing apparatus according to the present invention.
FIG. 2 is a block diagram showing a schematic configuration of a supply mechanism.
FIG. 3 is a flowchart showing a flow of a cleaning process.
FIG. 4 is a schematic diagram showing a state during each processing.
FIG. 5 is a block diagram showing a modification of the supply mechanism.
[Explanation of symbols]
    W ... Substrate
    1… Rotating shaft
    3 ... Motor
    5 ... Spin base (rotation support means)
    7… Support pin
  17 ... Control part (control means)
  23 ... Lower cleaning nozzle (nozzle)
  25… Piping
  27 ... Supply mechanism (supply means)
  29 ... 1st pure water supply source
  31 ... Pressure regulator (first flow rate adjusting means)
  33 ... Flow meter
  37 ... Chemical injection part (chemical injection means)
  39, 41 ... Flow control valve
  43 ... Flow control valve (second flow control means)
  45 ... On-off valve

Claims (9)

The substrate is supported on the rotation support means so that the lower surface of the substrate is separated from the upper surface of the rotation support means, and while rotating the substrate integrally with the rotation support means, the nozzle is disposed from the nozzle disposed below the substrate. A first step of supplying a treatment liquid to the lower surface ;
After said first step, said the substrate rotation speed first process slower state than during, and with less status than the processing liquid flow rate during the pure water flow rate of the first step, pure water from the nozzle A second step of cleaning the rotation support means and the nozzle below the substrate by discharging
A substrate processing method comprising: An umbrella-type shield that supports the substrate on the rotation support means so that the lower surface of the substrate is separated from the upper surface of the rotation support means, and shields the upper part of the gas ejection port while rotating the substrate integrally with the rotation support means. A first step of providing a blocking member on the upper end and supplying a processing liquid from a nozzle disposed below the substrate to the lower surface of the substrate;
  After the first process, at least one of a state where the substrate rotation speed is slower than that during the first process and a state where the pure water flow rate is lower than the treatment liquid flow rate during the first process, A second process in which pure water is discharged from the nozzle and the pure water from the nozzle flows down and is washed down the upper surface of the blocking member of the nozzle, and the rotation support means and the nozzle are washed;
  A substrate processing method comprising: In the substrate processing method of Claim 1 or Claim 2 ,
Substrate cleaning method for performing a third step of cleaning the lower surface of the substrate by supplying pure water from the nozzle to the lower surface of the substrate while rotating the substrate integrally with the rotation support means after the second step. . Rotation support means for rotatably supporting the substrate with the lower surface of the substrate spaced apart;
A nozzle that is provided below the substrate and sequentially supplies the processing liquid and pure water from below the substrate supported by the rotation support means;
Wherein while rotating the rotary support means and the substrate together, after processing the lower surface of the substrate by supplying a predetermined amount of the treatment liquid from the nozzle, in a state where the rotational speed and flow amount was lower than the process, the Control means for supplying pure water from a nozzle and controlling the rotation support means below the substrate and the process of cleaning the nozzle;
A substrate processing apparatus comprising: Rotation support means for rotatably supporting the substrate with the lower surface of the substrate spaced apart;
A nozzle-type blocking member that shields the upper part of the gas jet port at the upper end, and a nozzle that sequentially supplies the processing liquid and pure water from below the substrate supported by the rotation support means;
While rotating the rotation support means and the substrate integrally, supplying a predetermined amount of processing liquid from the nozzle to process the lower surface of the substrate, at least one of the rotational speed and the flow rate is lower than that in the processing. And a control means for controlling to supply pure water from the nozzle and to perform a process of cleaning the rotation support means and the nozzle below the substrate,
The substrate processing apparatus, wherein the control means causes pure water from the nozzle to flow down and wash the upper surface of the shielding member. In the substrate processing apparatus of Claim 4 or Claim 5 ,
A supply means for selectively supplying a treatment liquid and pure water to the nozzle;
The supply means includes
Piping connected to the nozzle;
A first pure water supply source for supplying pure water to the pipe;
First flow rate adjusting means for adjusting a flow rate of pure water from the first treatment liquid supply source to the pipe;
A second pure water supply source for supplying pure water to the pipe;
Second flow rate adjusting means for adjusting the flow rate of pure water from the second pure water supply source to the pipe to be smaller than the flow rate of the first flow rate adjusting means;
A chemical liquid injection means for injecting a chemical liquid into the pipe located downstream of the first flow rate adjustment means and the second flow rate adjustment means,
When the lower surface of the substrate is processed, the control means supplies pure water from the first pure water supply source and the second pure water supply source and injects chemical liquid from the chemical liquid injection means. By supplying a treatment liquid obtained by mixing pure water and a chemical solution and cleaning the nozzle, the rotation support means is rotated at a lower speed than when the lower surface of the substrate is treated, When supplying only pure water from the second pure water supply source and cleaning the rotation support means, the rotation support means is rotated at a lower speed than when the lower surface of the substrate is processed, and the first A substrate processing apparatus, wherein the supply means is controlled so as to supply only pure water from one pure water supply source. In the substrate processing apparatus of Claim 4 or Claim 5 ,
A supply means for selectively supplying a treatment liquid and pure water to the nozzle;
The supply means includes
Piping connected to the nozzle;
A pure water supply source for supplying pure water to the pipe;
Flow rate adjusting means for adjusting the flow rate of pure water from the pure water supply source to the pipe;
A chemical solution injection means for injecting a chemical solution into the pipe, which is downstream of the flow rate adjustment means,
When processing the lower surface of the substrate, the control means supplies the pure water by setting the flow rate adjusting means to the first pure water flow rate, and injects the chemical solution from the chemical solution injection means, When supplying the processing liquid obtained by mixing water and chemical liquid and cleaning the nozzle, the rotation support means is rotated at a lower speed than when the lower surface of the substrate is processed, and the flow rate adjustment is performed. When the means is set to a second pure water flow rate smaller than the first pure water flow rate and only pure water is supplied to clean the rotation support means, the flow rate adjusting means is set to the first pure water flow rate. A substrate processing apparatus, wherein the supply means is controlled so as to supply only pure water at a third pure water flow rate that is smaller than the water flow rate and higher than the second pure water flow rate. Rotation support means for rotatably supporting the substrate with the lower surface of the substrate spaced apart;
A nozzle for sequentially supplying a processing solution and pure water from below the substrate supported by the rotation support means;
Supply means for selectively supplying a treatment liquid and pure water to the nozzle;
While rotating the rotation support means and the substrate integrally, supplying a predetermined amount of processing liquid from the nozzle to process the lower surface of the substrate, at least one of the rotational speed and the flow rate is lower than that in the processing. A control means for controlling to supply pure water from the nozzle, and to perform a process of cleaning the rotation support means and the nozzle,
The supply means includes
Piping connected to the nozzle;
A first pure water supply source for supplying pure water to the pipe;
First flow rate adjusting means for adjusting a flow rate of pure water from the first treatment liquid supply source to the pipe;
A second pure water supply source for supplying pure water to the pipe;
Second flow rate adjusting means for adjusting the flow rate of pure water from the second pure water supply source to the pipe to be smaller than the flow rate of the first flow rate adjusting means;
A chemical liquid injection means for injecting a chemical liquid into the pipe located downstream of the first flow rate adjustment means and the second flow rate adjustment means,
When the lower surface of the substrate is processed, the control means supplies pure water from the first pure water supply source and the second pure water supply source and injects chemical liquid from the chemical liquid injection means. When cleaning the nozzle by supplying a treatment liquid obtained by mixing pure water and a chemical solution, The rotation support means is rotated at a lower speed than when the lower surface of the substrate is processed, and only the pure water is supplied from the second pure water supply source to clean the rotation support means. A substrate processing apparatus, wherein the support means is rotated at a lower speed than when the lower surface of the substrate is processed, and the supply means is controlled to supply only pure water from the first pure water supply source. . Rotation support means for rotatably supporting the substrate with the lower surface of the substrate spaced apart;
A nozzle for sequentially supplying a processing solution and pure water from below the substrate supported by the rotation support means;
Supply means for selectively supplying a treatment liquid and pure water to the nozzle;
While rotating the rotation support means and the substrate integrally, supplying a predetermined amount of processing liquid from the nozzle to process the lower surface of the substrate, at least one of the rotational speed and the flow rate is lower than that in the processing. A control means for controlling to supply pure water from the nozzle and to perform a process of cleaning the rotation support means and the nozzle,
The supply means includes
Piping connected to the nozzle;
A pure water supply source for supplying pure water to the pipe;
Flow rate adjusting means for adjusting the flow rate of pure water from the pure water supply source to the pipe;
A chemical solution injection means for injecting a chemical solution into the pipe downstream of the flow rate adjustment means,
When processing the lower surface of the substrate, the control means supplies the pure water by setting the flow rate adjusting means to the first pure water flow rate, and injects the chemical solution from the chemical solution injection means, When supplying the processing liquid obtained by mixing water and chemical liquid and cleaning the nozzle, the rotation support means is rotated at a lower speed than when the lower surface of the substrate is processed, and the flow rate adjustment is performed. When the means is set to a second pure water flow rate smaller than the first pure water flow rate and only pure water is supplied to clean the rotation support means, the flow rate adjusting means is set to the first pure water flow rate. A substrate processing apparatus, wherein the supply means is controlled so as to supply only pure water at a third pure water flow rate that is smaller than the water flow rate and higher than the second pure water flow rate.

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