JP3715942B2 - Wire bonding method - Google Patents

Wire bonding method Download PDF

Info

Publication number
JP3715942B2
JP3715942B2 JP2002128174A JP2002128174A JP3715942B2 JP 3715942 B2 JP3715942 B2 JP 3715942B2 JP 2002128174 A JP2002128174 A JP 2002128174A JP 2002128174 A JP2002128174 A JP 2002128174A JP 3715942 B2 JP3715942 B2 JP 3715942B2
Authority
JP
Japan
Prior art keywords
wire
pair
electrodes
pad
holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002128174A
Other languages
Japanese (ja)
Other versions
JP2002343825A (en
Inventor
秀和 千葉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP2002128174A priority Critical patent/JP3715942B2/en
Publication of JP2002343825A publication Critical patent/JP2002343825A/en
Application granted granted Critical
Publication of JP3715942B2 publication Critical patent/JP3715942B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【０００１】
【発明の属する技術分野】
【０００２】
本発明は、半導体チップと回路基板上に形成されたパッドとの間等を、ボンディングワイヤを配線（ルーピング）しつつ接続するワイヤボンディング方法に関するものである。
【０００３】
【従来の技術】
【０００４】
従来の超音波熱圧着方式のワイヤボンディング方法に用いられるワイヤボンダは、ボンディングワイヤである金線が中心孔に移動自在に挿通された筒状のキャピラリと、カットクランパと、トーチロッドとを備えている。カットクランパは、金線を挟持すると共に所定の電位を与える挟持手段であるサーメット（Ｃｒ−ＳｉＯ）製の２つ１組の挟持電極を持っている。
【０００５】
例えば、金線の先端を回路基板上のパッドに接続する場合、該キャピラリの先端から突出した金線の先端に金球を形成し、この金球をキャピラリの先端で回路基板上のパッドに押し付け、該金球を超音波振動させて接続する。先端が回路基板に接続された金線をもう一方の接続対象のチップのインナーリード等に接続するときには、キャピラリを該インナーリードの位置に移動し、該キャピラリの先端側で金線を押し付け、超音波振動をかけて接続する。接続が終了した金線を切断する場合には、カットクランパの挟持電極で金線を挟持して該金線に張力をかけて切断する。
【０００６】
金線に金球を形成するときには、サーメット製の挟持電極で金線を挟持し、該挟持部とトーチロッドとの間に放電用電圧をかけて、キャピラリの先端から突き出した金線に空中放電を起こさせて融し金球を形成し、これ冷却をする。金線或いは金球を接続対象の基板のパッドに接続するときには、回路基板を加熱しておき、これを該回路基板にキャピラリの先端部分で押圧して超音波振動を与えて超音波熱圧着を行う。
【０００７】
【発明が解決しようとする課題】
【０００８】
しかしながら、従来のワイヤボンディング方法では、次のような課題があった。
【０００９】
使用する各挟持電極は、距離が可変な平行板にそれぞれ取り付けられており、金線を挟持する作用面は、円形になっている。そのため、挟持電極の中心を外れた状態で金線を挟持すると該挟持電極から金線の先端までの距離がばらつき、これが放電印加電圧のばらつきになり、該空中放電で形成される金球の大きさが不安定になる。よって、回路基板のパッドに押圧したときに金球の潰れ方にばらつきが生じ、金球接合強度のばらつきになる。
【００１０】
また、空中放電を繰り返すと、挟持電極の作用面が著しく摩耗し、安定した空中放電状態が得られなくなり、形成される金球にばらつきが生じるという課題があった。
【００１１】
一方、管理面からいえば、挟持電極が金線を挟持するので、該挟持電極の作用面を高精度で平行に対向させる必要があり、定期交換等の管理を困難なものにしていた。
【００１２】
【課題を解決するための手段】
【００１３】
前記課題を解決するために、本発明のうちの請求項１に係る発明は、半導体チップ上のパッドと前記半導体チップが搭載された回路基板上のパッドとの間を接続するワイヤボンディング方法において、作用面がそれぞれ回転可能に設けられている１対の挾持電極間にワイヤを挾持する工程と、トーチロッドにより前記ワイヤに第１の電位を印加する工程と、前記挾持電極により前記ワイヤに直接第２の電位を印加して前記の先端に溶融ボールを形成する工程と、前記溶融ボールを固化する工程と、前記ワイヤを開放する工程と、前記回路基板のパッドに前記固化したボールをキャピラリにより押し付ける工程と、前記固化したボールを前記回路基板のパッドに圧着するために超音波振動を与える工程と、前記挾持電極間に前記ワイヤを再度挾持し、前記挾持電極を前記回路基板のパッドから離れる方向に移動させることにより前記ワイヤを切断する工程と、を含んでいる。
請求項２に係る発明は、請求項１のワイヤボンディング方法において、前記作用面は矩形である。
【００１４】
請求項３に係る発明は、半導体チップ上のパッドと前記半導体チップが搭載された回路基板上のパッドとの間を接続するワイヤボンディング方法において、それぞれ矩形形状の作用面を有し、かつ前記作用面にはワイヤに点接触する複数の微小突起が設けられている１対の挾持電極間に前記ワイヤを挾持する工程と、トーチロッドにより前記ワイヤに第１の電位を印加する工程と、前記挾持電極により前記ワイヤに直接第２の電位を印加して前記ワイヤの先端に溶融ボールを形成する工程と、前記溶融ボールを固化する工程と、前記ワイヤを開放する工程と、前記回路基板のパッドに前記固化したボールをキャピラリにより押し付ける工程と、前記固化したボールを前記回路基板のパッドに圧着するために超音波振動を与える工程と、前記挾持電極間に前記ワイヤを再度挾持し、前記挾持電極を前記回路基板のパッドから離れる方向に移動させることにより前記ワイヤを切断する工程と、を含んでいる。
【００１５】
請求項４に係る発明は、半導体チップ上のパッドと前記半導体チップが搭載された回路基板上のパッドとの間を接続するワイヤボンディング方法において、それぞれ作用面を有する１対の挾持電極間にワイヤを挾持する工程と、前記ワイヤを、前記１対の挟持電極のそれぞれを支持する部材の少なくとも一方に取り付けられたヒータによって加熱する工程と、トーチロッドにより前記ワイヤに第１の電位を印加する工程と、前記挾持電極により前記ワイヤに直接第２の電位を印加して前記ワイヤの先端に溶融ボールを形成する工程と、前記溶融ボールを固化する工程と、前記ワイヤを開放する工程と、前記回路基板のパッドに前記固化したボールをキャピラリにより押し付ける工程と、前記固化したボールを前記回路基板のパッドに圧着するために超音波振動を与える工程と、前記挾持電極間に前記ワイヤを再度挾持し、前記挾持電極を前記回路基板のパッドから離れる方向に移動させることにより前記ワイヤを切断する工程と、を含んでいる。
請求項５に係る発明は、請求項４のワイヤボンディング方法において、前記作用面は矩形である。
【００１６】
請求項６に係る発明は、半導体チップ上のパッドと前記半導体チップが搭載された回路基板上のパッドとの間を接続するワイヤボンディング方法において、それぞれ作用面を有する１対の第１挾持電極と、それぞれ作用面を有する１対の第２挾持電極との内、１対の前記第１挟持電極が有する前記作用面及び１対の前記第２挟持電極が有する前記作用面の少なくとも１対の前記作用面は、それぞれ回転可能に設けられた１対の前記第１挟持電極及び１対の前記第２挟持電極を用い、１対の前記第１挾持電極間にワイヤを挾持する工程と、トーチロッドにより前記ワイヤに第１の電位を印加する工程と、前記第１挾持電極により前記ワイヤに直接第２の電位を印加して前記ワイヤの先端に溶融ボールを形成する工程と、前記溶融ボールを固化する工程と、前記ワイヤを開放する工程と、前記回路基板のパッドに前記固化したボールをキャピラリにより押し付ける工程と、前記固化したボールを前記回路基板のパッドに圧着するために超音波振動を与える工程と、１対の前記第２挾持電極間に前記ワイヤを再度挾持し、前記第２挾持電極を前記回路基板のパッドから離れる方向に移動させることにより前記ワイヤを切断する工程と、を含んでいる。
【００１７】
請求項７に係る発明は、請求項６のワイヤボンディング方法において、１対の前記第１挟持電極が有する前記作用面及び１対の前記第２挟持電極が有する前記作用面の少なくとも１対の前記作用面は、それぞれ矩形形状である。
【００１８】
請求項８に係る発明は、請求項６又は７のワイヤボンディング方法において、前記１対の第１挟持電極が有する前記作用面及び前記１対の第２挟持電極が有する前記作用面の少なくとも１対の前記作用面には、前記ワイヤに点接触する複数の微小突起が設けられている。
請求項９に係る発明は、請求項６、７又は８のワイヤボンディング方法において、それぞれ作用面を有する１対の前記第１挾持電極間にワイヤを挾持する工程の後であって、前記トーチロッドにより前記ワイヤに第１の電位を印加する工程の前に、前記ワイヤを、１対の前記第１挟持電極のそれぞれを支持する部材の少なくとも一方に取り付けられたヒータによって加熱する工程をさらに含んでいる。
【００１９】
【発明の実施の形態】
【００２０】
（第１の実施形態）
【００２１】
図２は、本発明の第１の実施形態を示すワイヤボンディング方法に用いられるワイヤボンダの概略の構成図である。
【００２２】
このワイヤボンダのスプールユニット１には、スプール１ａがセットされている。スプール１ａには、ボンディングワイヤである金線２が巻装されている。スプール１ａから繰り出された金線２は、金線ガイド３に導かれてエアクランパ４の中心孔を通っている。エアクランパ４は筒状をなし、金線２にエアーでバックテンションをかけるものである。エアクランパ４から出た金線２は、トランスデューサ５で支持された筒状のキャピラリ６の中心穴の後端側から先端側に挿通されている。トランスデューサ５は、キャピラリ６を移動させて先端側を接続対象に押圧させる機能と、該キャピラリ６に超音波振動を与える機能とを有している。
【００２３】
キャピラリ６の先端の近傍には、トーチロッド７が配置され、該キャピラリ６の後端側とエアクランパ４との間には、カットクランパ１０が配置されている。
【００２４】
図１は、図２における本発明の第１の実施形態を示すワイヤボンディング方法に用いられるカットクランパの構成図である。
【００２５】
カットクランパ１０は、シャフト１１に取り付けられた第１の支持部材である固定板１２と、伸縮自在のシャフト１３に取り付けられた第２の支持部材である可動板１４とを有している。これらの固定板１２及び可動板１４は平行であり、距離がソレノイド１５によって変化するようになっている。固定板１２と可動板１４とには、２つ１組のサーメット製の薄板状の第１、第２の挟持電極１６，１７がそれぞれ取り付けられている。第１、第２の挟持電極１６，１７は第１、第２の挟持手段であり、金線２を作用面で挟持すると共に該金線２に所定の電位を印加するものである。挟持電極１６，１７の金線２を挟持する作用面は、共に矩形形状（例えば、四辺形）になっており、該作用面が対向するように平行に取り付けられているばかりでなく、回転可能に取り付けられている。可動板１４とシャフト１１の間には、例えばスプリング１８が取り付けられている。スプリング１８は、可動板１４の動きを矯正するものである。
【００２６】
次に、このワイヤボンダを用いたワイヤボンディング方法について説明する。
【００２７】
例えば、回路基板であるシリコン基板に形成されたパッドと半導体チップのインナーリードとの間をルーピングして接続する場合、従来と同様、キャピラリ６の先端側から突き出した金線２に金球２ａを形成する。この時には、カットクランパ１０のソレノイド１５により、可動板１４を固定板１２側に動かして距離を狭め、挟持電極１６，１７で金線２を挟持する。そして、挟持電極１６，１７とトーチロッド７とにそれぞれ固有の電位を与え、放電電圧を印加する。放電電圧が印加されると、キャピラリ６の先端から突き出た金線２の先端が空中放電し、金線２が融けて球状の溶融ボールになる。放電電圧の印加を停止すると、溶融ボールが冷却されて金球２ａになる。
【００２８】
金球２ａを形成した後、可動板１４と固定板１２の間隔を開いて挟持電極１６，１７を開放すると共に、トランスデューサ５でキャピラリ６の先端を基板のパッドに押し付けるようにする。これにより、金球２ａがパッドに押圧される。この状態でトランスデューサ５を介してキャピラリ６に超音波振動を与え、金球２ａに該超音波振動を伝える。ここで、基板が加熱されていれば、金線２の先端の金球２ａがパッドに超音波熱圧着される。
【００２９】
先端が基板に接続された金線２をもう一方の接続対象の半導体チップのインナーリード等に接続するときには、キャピラリ６を該インナーリードの位置に移動し、該キャピラリ６の先端側で金線２を押圧し、トランスデューサ５を介して超音波振動を金線２に与え、金線２がインナーリードに超音波熱圧着される。これにより、金線２がルーピングされて接続されたことになる。金線２を切断する場合には、可動板１４と固定板１２の間隔を狭めて挟持電極１６，１７を閉じる。これにより、金線２が挟持される。金線２を挟持した状態でカットクランパ１０全体を上方に動かすことにより、金線２に張力がかかり、該金線２が切れる。
【００３０】
以上のように、この第１の実施形態では、次の（１）〜（３）のような効果がある。
【００３１】
（１） 図３は、挟持電極１６，１７と金線２の関係を示す図である。
【００３２】
従来のワイヤボンディング方法では、円形の挟持電極を使用していたので、その挟持電極の中心を金線２が通るように挟持した場合と、中心を通らない状態で金線２を挟持した場合とでは、金線２の挟持される長さが異なる。これに対し、矩形の挟持電極１６，１７で金線２を挟持する場合には、対辺が平行なので、図３のように、金線２が挟持電極１６，１７の中心を通らなくても、金線２の挟持される長さが等しくなる。そのため、空中放電させるための放電印加電圧にばらつきがなくなり、安定した大きさの金球２ａを形成することができる。
【００３３】
（２） 作用面が矩形の挟持電極１６，１７を用いたので、この挟持電極１６，１７の中心の位置を高精度に合わせる必要がなくなると共に、該挟持電極１６，１７における金線２の挟持中心位置も高精度に合わせる必要がなくなり、管理が容易になる。
【００３４】
（３） 作用面が回転可能な挟持電極１６，１７を用いているので、定期管理のときに、該挟持電極１６，１７の作用面を回転させれば、摩耗のない状態で金線２を挟持できるようになる。よって、従来では定期管理毎に行っていた作用面の高精度な平行位置出しを定期管理毎に行う必要がなくなり、該高精度の平行位置出しの頻度を減少できる。
【００３５】
（第２の実施形態）
図４（ａ），（ｂ）は、本発明の第２の実施形態を示すワイヤボンディング方法に用いられるカットクランパの構成図であり、同図（ａ）は全体の構成、同図（ｂ）は同図（ａ）の挟持電極２６，２７を示している。
【００３６】
このカットクランパは、第１の実施形態を示す図１のワイヤボンダにおけるカットクランパ１０を変形したものであり、該カットクランパ１０を示す図２と同様に、シャフト２１に取り付けられた固定板２２と、伸縮自在のシャフト２３に取り付けられた可動板２４とを有している。固定板２２と可動板２４とには、２つ１組のサーメット製の第１、第２の挟持電極２６，２７がそれぞれ取り付けられている。挟持電極２６，２７は、金線２を挟持するためと該金線２に所定の電位を印加するための両方に用いるものであるが、第１の実施形態とは異なり、これらの挟持電極２６，２７の作用面には、金線２に点接触する無数の微小な突起が形成されている。挟持電極２６，２７の作用面の形状は、共に矩形形状になっており、該作用面が対向するように平行に取り付けられているばかりでなく、回転可能に取り付けられている。可動板２４とシャフト２１の間には、該可動板２４の動きを矯正するスプリング２８が取り付けられている。
【００３７】
このカットクランパを取り付けたワイヤボンダを用いたワイヤボンディング方法では、第１の実施形態と同様の方法により、金線２を回路基板上に形成されたパッドと半導体チップのインナーリードとの間を金線で接続する。また、定期管理も第１の実施形態と同様に行われる。
【００３８】
以上のように、この第２の実施形態では、第１の実施形態と同様に、カットクランパの挟持電極２６，２７の作用面を矩形にすると共に、該挟持電極２６，２７の作用面を回転可能にしたものを使用するので、第１の実施形態と同様に、金線２の挟持される長さが等しくなり、放電印加電圧にばらつきがなくなり、安定した大きさの金球２ａを形成することができ、挟持電極２６，２７の中心の位置や金線２の挟持中心位置を高精度に合わせる必要がなくなり、管理が容易になると共に、平行位置出しの頻度を低減できる。その上、挟持電極２６，２７の作用面に無数の突起を形成したものを使用するので、金線２の滑りが防止でき、これにより、空中放電における電極間隔（電極長さ）が安定し、金球２ａの大きさのばらつきが少なくなり、第１の実施形態よりも、品質が安定する。
【００３９】
（第３の実施形態）
【００４０】
図５（ａ），（ｂ）は、本発明の第３の実施形態を示すワイヤボンディング方法に用いられるワイヤボンダの概略の構成図であり、同図（ａ）は正面図、及び同図（ｂ）は同図（ａ）の要部の側面図である。
【００４１】
このワイヤボンダのスプールユニット３１には、第１の実施形態と同様のスプール３１ａがセットされている。スプール３１ａにはボンディングワイヤである金線３２が巻装されている。スプール３１ａから繰り出された金線３２は、金線ガイド３３に導かれてエアクランパ３４の中心孔を通っている。エアクランパ３４から出た金線３２は、トランスデューサ３５で支持された筒状のキャピラリ３６の中心孔の後端側から先端側に挿通されている。トランスデューサ３５は、キャピラリ３６を移動させて金線３２の接続対象に該キャピラリ３６の先端を押し付ける機能と、該キャピラリ３６に超音波振動を与える機能とを有している。キャピラリ３６の先端の近傍には、トーチロッド３７が配置されている。
【００４２】
キャピラリ３６の後端側とエアクランパ３４との間には、第１の実施形態とは異なり、第１のカットクランパ３８と第２のカットクランパ３９の２セットのカットクランパが配置されている。カットクランパ３８は、例えば第１の実施形態のカットクランパ１０と同様の構成になっており、図１の固定板１２及び可動板１４に対応する第１の支持部材である固定板３８ａ及び第２の支持部材である可動板３８ｂと、図１の第１、第２の挟持電極１６，１７に対応する第１、第２の挟持手段である薄板状の矩形形状（例えば、四辺形）の挟持電極３８ｃ，３８ｄを有している。カットクランパ３９も、第１の実施形態のカットクランパ１０と同様の構成になっており、図１の固定板１２及び可動板１４に対応する第３の支持部材である固定板３９ａ及び第４の支持部材である可動板３９ｂと、図１の挟持電極１６，１７に対応する第３、第４の挟持手段である薄板状の矩形形状（例えば、四辺形）の挟持電極３９ｃ，３９ｄを有している。
【００４３】
次に、このワイヤボンダを用いたワイヤボンディング方法について説明する。
【００４４】
例えば、回路基板であるシリコン基板に形成されたパッドと半導体チップのインナーリードとの間を接続して配線する場合、キャピラリ３６の先端側から突き出した金線３２に金球３２ａを形成する。この時には、カットクランパ３８の可動板３８ｂを固定板３８ａ側に動かして距離を狭め、挟持電極３８ｃ，３８ｄで金線３２を挟持する。そして、挟持電極３８ｃ，３８ｄとトーチロッド３７とにそれぞれ固有の電位を与え、放電電圧を印加する。放電電圧が印加されると、キャピラリ３６の先端側から突き出た金線３２の先端が空中放電し、該金線３２が融けて球状の溶融ボールになる。放電電圧の印加を停止すると、溶融ボールが冷却されて金球３２ａになる。
【００４５】
金球３２ａを形成した後、可動板３８ｂと固定板３８ａの間隔を開いて挟持電極３８ｃ，３８ｄを開放すると共に、トランスデューサ３５でキャピラリ３６の先端を基板のパッドに押し付けるようにする。これにより、金球３２ａがパッドに押圧される。この状態でトランスデューサ３５を介してキャピラリ３６に超音波振動を与え、金球３２ａに該超音波振動を伝える。ここで、基板が加熱されていれば、金線３２の先端の金球３２ａは、パッドに超音波熱圧着される。
【００４６】
先端が基板に接続された金線３２をもう一方の接続対象の半導体チップのインナーリード等に接続するときには、キャピラリ３６を該インナーリードの位置に移動し、該キャピラリ３６の先端側で金線３２を押し付け、トランスデューサ３５を介して超音波振動を金線３２に与える。これにより、金線３２がインナーリードに超音波熱圧着される。金線３２を切断する場合には、カットクランパ３９の可動板３９ｂと固定板３９ａの間隔を狭めて挟持電極３９ｃ，３９ｄを閉じる。これにより、金線３２が挟持される。金線３２を挟持した状態でカットクランパ３９全体を上方に動かすことにより、金線３２に張力がかかり、該金線３２が切れる。
【００４７】
以上のように、この第３の実施形態では、２セットのカットクランパ３８，３９を備え、空中放電をさせる時に用いるカットクランパ３８と金線３２を切断するときに用いるカットクランパ３９とを切替えて制御するようにしている。そのため、金線３２の空中放電で摩耗する挟持電極３８ｃ，３８ｄを空中放電を行わないときには使用しないようにしたので、金線３２のルーピングに対する影響が小さくなり、安定した配線が可能になる。また、挟持電極３８ｃ，３８ｄと挟持電極３９ｃ，３９ｄとが独立して用いられるので、より安定した金線３２の繰り出し量が得られ、ばらつきの少ない金球形成を行うことができ、品質が向上する。さらに、挟持電極３８ｃ，３８ｄ及び挟持電極３９ｃ，３９ｄにおける摩耗がそれぞれ抑制されるので、定期管理の面で優位になる。
【００４８】
（第４の実施形態）
【００４９】
図６は、本発明の第４の実施形態を示すワイヤボンディング方法に用いられるカットクランパの構成図である。
【００５０】
このカットクランパは、第１の実施形態のワイヤボンダにおけるカットクランパ１０を変形したものであり、該カットクランパ１０を示す図１と同様に、シャフト４１に取り付けられた固定板４２と、伸縮自在のシャフト４３に取り付けられた可動板４４とを有し、これらの固定板４２と可動板４４の間の距離がソレノイド４５によって変化するようになっている。固定板４２と可動板４４とには、２つ１組のサーメット製の第１、第２の挟持電極４６，４７がそれぞれ回転可能に取り付けられている。可動板４４とシャフト４１の間には、該可動板４４の動きを矯正するスプリング４８が取り付けられている。可動板４４には、第１の実施形態には無かったヒータ４９が取り付けられている。このヒータ４９は、挟持電極４７を加熱して金線を熱するものである。
【００５１】
このようなカットクランパを用いたワイヤボンディング方法では、ヒータ４９で挟持電極４７を加熱しつつ、第１の実施形態と同様の方法で、基板に形成されたパッドと半導体チップのインナーリードとを金線で接続する。また、定期管理は、第１の実施形態と同様に行われる。
【００５２】
以上のように、この第４の実施形態では、挟持電極４７を加熱するヒータ４９をカットクランパに取り付けたものを使用するので、金線を加熱した状態で空中放電させると共に金線をルーピングすることができる。よって、形成される金球の硬度のばらつきを抑えることができ、品質が安定する。さらに、金線のくせ付けの制御が容易になり、ルーピングの安定性が向上する。
【００５３】
なお、本発明は、上記実施形態に限定されず種々の変形が可能である。その変形例としては、例えば次のようなものがある。
【００５４】
（１） 第２の実施形態で説明した図４のカットクランパに、第４の実施形態のようなヒータ４９を取り付けて使用することも可能である。
【００５５】
（２） 第３の実施形態のワイヤボンダでは、第１の実施形態のカットクランパ１０と同様の構成のカットクランパ３８，３９を用いたが、各カットクランパ３８，３９は、第２の実施形態の図４のカットクランパあるいは第４の実施形態の図６のカットクランパに変更して用いることが可能である。
【００５６】
（３） 図６のカットクランパでは、ヒータ４９を可動板４４側に取り付けたが、固定板４２側、或いは可動板４４及び固定板４２の両方に取り付けて用いてもよい。
【００５７】
（４） カットクランパ３８，３９の位置を逆にして用いることも可能であり、カットクランパ３８をキャピラリ３６の近くに配置して用いてもよい。
【００５８】
【発明の効果】
【００５９】
以上詳細に説明したように、本発明のうちの請求項１、６〜９に係る発明によれば、作用面が回転可能な挟持電極を用いたので、これらを回転させるだけで、摩耗した部分でワイヤを挟持させなくて済むようになり、定期管理等で挟持電極の平行位置出しを行う頻度を低減できる。
請求項２、５、７に係る発明によれば、矩形形状の作用面を有する挟持電極を用いたので、ワイヤを挟持する長さが安定し、ワイヤのボール部分の大きさが安定する。その上、挟持電極の中心の位置を高精度に合わせる必要がなくなると共に、該挟持電極における挟持中心位置も高精度に合わせる必要がなくなり、管理が容易になる。
【００６０】
請求項３、８に係る発明によれば、作用面に複数の微小突起が設けられた挟持電極を用いたので、微小突起によりワイヤの滑りを防止でき、ワイヤのボール部分の大きさが安定する。
請求項４、９に係る発明によれば、挟持電極を支持する部材に取り付けられたヒータによりワイヤを加熱するようにしたので、ワイヤを加熱した状態で空中放電させると共にワイヤをルーピングすることができる。よって、形成される溶融ボールの硬度のばらつきを抑えることができ、品質が安定する。さらに、ワイヤのくせ付けの制御が容易になり、ルーピングの安定性が向上する。
【００６１】
請求項６に係る発明によれば、第１挟持電極を用いて空中放電させ、第２挟持電極を用いてワイヤを切断し、ワイヤの空中放電で摩耗する第１挟持電極を、空中放電を行わないときには使用しないようにしたので、ワイヤのルーピングに対する影響が小さくなり、安定した配線が可能になる。その上、第１挟持電極と第２挟持電極とが独立して用いられるので、より安定したワイヤの繰り出し量が得られ、ばらつきの少ない溶融ボール形成を行うことができ、品質が向上する。さらに、第１挟持電極及び第２挟持電極における摩耗がそれぞれ抑制されるので、定期管理の面で優位になる。
【図面の簡単な説明】
【図１】本発明の第１の実施形態を示すワイヤボンディング方法に用いられるカットクランパの構成図である。
【図２】本発明の第１の実施形態を示すワイヤボンディング方法に用いられるワイヤボンダの概略の構成図である。
【図３】挟持電極と金線の関係を示す図である。
【図４】本発明の第２の実施形態を示すワイヤボンディング方法に用いられるカットクランパの構成図である。
【図５】本発明の第３の実施形態を示すワイヤボンディング方法に用いられるワイヤボンダの概略の構成図である。
【図６】本発明の第４の実施形態を示すワイヤボンディング方法に用いられるカットクランパの構成図である。
【符号の説明】
１ａ，３１ａ スプール
２，３２ 金線
２ａ，３２ａ 金球
３，３３ 金線ガイド
４，３４ エアクランパ
５，３５ トランスデューサ
６，３６ キャピラリ
７，３７ トーチロッド
１０，３８，３９ カットクランパ
１２，２２，３８ａ，３９ａ，４２ 固定板
１４，２４，３８ｂ，３９ｂ，４４ 可動板
１６，１７，２６，２７，３８ｃ，３８ｄ，３９ｃ，３９ｄ，４６，４７ 挟持電極
４９ ヒータ[0001]
BACKGROUND OF THE INVENTION
[0002]
The present invention relates to a wire bonding method in which a bonding wire is connected (looped) between a semiconductor chip and a pad formed on a circuit board.
[0003]
[Prior art]
[0004]
A wire bonder used in a conventional ultrasonic thermocompression bonding wire bonding method includes a cylindrical capillary in which a gold wire as a bonding wire is movably inserted into a center hole, a cut clamper, and a torch rod. . The cut clamper has a pair of sandwiching electrodes made of cermet (Cr—SiO), which is a sandwiching means that sandwiches the gold wire and applies a predetermined potential.
[0005]
For example, when connecting the tip of a gold wire to a pad on a circuit board, a gold ball is formed at the tip of the gold wire protruding from the tip of the capillary, and this gold ball is pressed against the pad on the circuit board at the tip of the capillary. The gold balls are connected by ultrasonic vibration. When connecting the gold wire whose tip is connected to the circuit board to the inner lead or the like of the other chip to be connected, move the capillary to the position of the inner lead and press the gold wire on the tip side of the capillary, Connect by applying sonic vibration. When cutting a gold wire that has been connected, the gold wire is clamped by a clamp electrode of a cut clamper, and the gold wire is tensioned and cut.
[0006]
When a gold ball is formed on a gold wire, the gold wire is clamped with a cermet clamping electrode, a discharge voltage is applied between the clamping part and the torch rod, and an air discharge is applied to the gold wire protruding from the tip of the capillary. Is melted to form a gold ball, which is cooled. When connecting a gold wire or a gold ball to the pad of the board to be connected, the circuit board is heated, and this is pressed against the circuit board at the tip of the capillary to apply ultrasonic vibration to perform ultrasonic thermocompression bonding. Do.
[0007]
[Problems to be solved by the invention]
[0008]
However, the conventional wire bonding method has the following problems.
[0009]
Each sandwiching electrode to be used is attached to a parallel plate having a variable distance, and the working surface for sandwiching the gold wire is circular. Therefore, if the gold wire is clamped in a state where the center of the sandwiching electrode is off, the distance from the sandwiching electrode to the tip of the gold wire varies. Becomes unstable. Therefore, when the ball is pressed against the pad of the circuit board, the gold balls are crushed and the gold ball bonding strength is varied.
[0010]
In addition, when air discharge is repeated, there is a problem that the working surface of the sandwiching electrode is significantly worn, a stable air discharge state cannot be obtained, and the formed gold balls vary.
[0011]
On the other hand, in terms of management, since the sandwiching electrode sandwiches the gold wire, it is necessary to face the working surfaces of the sandwiching electrode in parallel with high accuracy, making management such as periodic replacement difficult.
[0012]
[Means for Solving the Problems]
[0013]
  In order to solve the above problem,According to a first aspect of the present invention, there is provided a wire bonding method for connecting between a pad on a semiconductor chip and a pad on a circuit board on which the semiconductor chip is mounted. A step of holding a wire between a pair of holding electrodes, a step of applying a first potential to the wire by a torch rod, and applying a second potential directly to the wire by the holding electrode, A step of forming a molten ball at the tip of the substrate, a step of solidifying the molten ball, a step of releasing the wire, a step of pressing the solidified ball against a pad of the circuit board with a capillary, and the solidified ball Applying ultrasonic vibration to crimp the pads on the circuit board; holding the wire again between the holding electrodes; and It includes a step of cutting the wire by moving away from the substrate of the pad.
According to a second aspect of the present invention, in the wire bonding method of the first aspect, the working surface is rectangular.
[0014]
  According to a third aspect of the present invention, there is provided a wire bonding method for connecting between a pad on a semiconductor chip and a pad on a circuit board on which the semiconductor chip is mounted. A step of holding the wire between a pair of holding electrodes provided with a plurality of microprotrusions in point contact with the wire, a step of applying a first potential to the wire by a torch rod, and the holding A step of applying a second potential directly to the wire by means of an electrode to form a molten ball at the tip of the wire; a step of solidifying the molten ball; a step of releasing the wire; and a pad of the circuit board A step of pressing the solidified ball with a capillary, a step of applying ultrasonic vibration to press the solidified ball against a pad of the circuit board, The wire again sandwiched between the electrodes, includes a step of cutting the wire by moving the clamping electrode in a direction away from the pad of the circuit board.
[0015]
  According to a fourth aspect of the present invention, there is provided a wire bonding method for connecting a pad on a semiconductor chip and a pad on a circuit board on which the semiconductor chip is mounted, in which a wire is connected between a pair of holding electrodes each having a working surface. A step of heating the wire by a heater attached to at least one of the members supporting each of the pair of sandwiching electrodes, and a step of applying a first potential to the wire by a torch rod A step of directly applying a second potential to the wire by the holding electrode to form a molten ball at the tip of the wire, a step of solidifying the molten ball, a step of opening the wire, and the circuit A step of pressing the solidified ball against a pad of the substrate with a capillary, and a pressure bonding of the solidified ball to the pad of the circuit substrate Providing ultrasonic vibration for the purpose, and holding the wire again between the holding electrodes, and cutting the wire by moving the holding electrode in a direction away from the pad of the circuit board. Yes.
According to a fifth aspect of the present invention, in the wire bonding method according to the fourth aspect, the working surface is rectangular.
[0016]
  According to a sixth aspect of the present invention, a pad on a semiconductor chip and the semiconductor chip are mounted.Circuit boardIn the wire bonding method for connecting between the upper pads,Of the pair of first sandwiching electrodes each having a working surface and the pair of second sandwiching electrodes each having a working surface, the working surface and the pair of second second electrodes included in the pair of first sandwiching electrodes. At least one pair of the working surfaces of the sandwiching electrodes includes a pair of the first sandwiching electrodes and a pair of the second sandwiching electrodes that are rotatably provided, respectively, and the pair of the working surfaces.A step of holding a wire between first holding electrodes, a step of applying a first electric potential to the wire by a torch rod, and a second electric potential being directly applied to the wire by the first holding electrode. Forming a molten ball at a tip; solidifying the molten ball; releasing the wire; pressing the solidified ball against a pad of the circuit board with a capillary; and Applying ultrasonic vibration to crimp the circuit board pad;A pair of saidCutting the wire by holding the wire again between the second holding electrodes and moving the second holding electrode away from the pad of the circuit board.
[0017]
  According to a seventh aspect of the present invention, in the wire bonding method according to the sixth aspect, at least one pair of the working surfaces of the pair of first sandwiching electrodes and the working surface of the pair of second sandwiching electrodes. Each working surface is rectangularIt is.
[0018]
  Claim8The invention according to claim6 or 7In this wire bonding method, at least one pair of the working surfaces of the working surface of the pair of first sandwiching electrodes and the working surface of the pair of second sandwiching electrodes is in point contact with the wire. A plurality of minute protrusions are provided.
  Claim9The invention according to claim6, 7 or 8In the wire bonding method, after the step of holding the wire between the pair of first holding electrodes each having an action surface, before the step of applying the first potential to the wire by the torch rod The method further includes the step of heating the wire by a heater attached to at least one of the members supporting each of the pair of first sandwiching electrodes.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
[0020]
(First embodiment)
[0021]
FIG. 2 is a schematic configuration diagram of a wire bonder used in the wire bonding method according to the first embodiment of the present invention.
[0022]
A spool 1a is set in the spool unit 1 of the wire bonder. A gold wire 2 as a bonding wire is wound around the spool 1a. The gold wire 2 fed out from the spool 1 a is guided to the gold wire guide 3 and passes through the center hole of the air clamper 4. The air clamper 4 has a cylindrical shape and applies back tension to the gold wire 2 with air. The gold wire 2 coming out of the air clamper 4 is inserted from the rear end side to the front end side of the center hole of the cylindrical capillary 6 supported by the transducer 5. The transducer 5 has a function of moving the capillary 6 to press the tip side against the connection target, and a function of applying ultrasonic vibration to the capillary 6.
[0023]
A torch rod 7 is disposed near the tip of the capillary 6, and a cut clamper 10 is disposed between the rear end side of the capillary 6 and the air clamper 4.
[0024]
FIG. 1 is a configuration diagram of a cut clamper used in the wire bonding method showing the first embodiment of the present invention in FIG.
[0025]
The cut clamper 10 includes a fixed plate 12 that is a first support member attached to a shaft 11 and a movable plate 14 that is a second support member attached to a telescopic shaft 13. The fixed plate 12 and the movable plate 14 are parallel to each other, and the distance is changed by a solenoid 15. A pair of cermet thin plate-like first and second sandwiching electrodes 16 and 17 are attached to the fixed plate 12 and the movable plate 14, respectively. The first and second sandwiching electrodes 16 and 17 are first and second sandwiching means for sandwiching the gold wire 2 with the working surface and applying a predetermined potential to the gold wire 2. The working surfaces for sandwiching the gold wires 2 of the sandwiching electrodes 16 and 17 are both rectangular (eg, quadrilateral), and are not only mounted in parallel so that the working surfaces face each other, but also rotatable. Is attached. For example, a spring 18 is attached between the movable plate 14 and the shaft 11. The spring 18 corrects the movement of the movable plate 14.
[0026]
Next, a wire bonding method using this wire bonder will be described.
[0027]
For example, when connecting between a pad formed on a silicon substrate, which is a circuit board, and an inner lead of a semiconductor chip by looping, a gold ball 2a is attached to a gold wire 2 protruding from the tip side of the capillary 6 as in the prior art. Form. At this time, the movable plate 14 is moved to the fixed plate 12 side by the solenoid 15 of the cut clamper 10 to reduce the distance, and the gold wire 2 is clamped by the clamping electrodes 16 and 17. A unique potential is applied to each of the sandwiching electrodes 16 and 17 and the torch rod 7, and a discharge voltage is applied. When a discharge voltage is applied, the tip of the gold wire 2 protruding from the tip of the capillary 6 is discharged in the air, and the gold wire 2 melts into a spherical molten ball. When the application of the discharge voltage is stopped, the molten ball is cooled to become a gold ball 2a.
[0028]
After forming the gold sphere 2a, the gap between the movable plate 14 and the fixed plate 12 is opened to open the sandwiching electrodes 16 and 17, and the transducer 5 presses the tip of the capillary 6 against the substrate pad. Thereby, the gold ball 2a is pressed against the pad. In this state, ultrasonic vibration is applied to the capillary 6 through the transducer 5, and the ultrasonic vibration is transmitted to the gold ball 2a. Here, if the substrate is heated, the gold ball 2a at the tip of the gold wire 2 is subjected to ultrasonic thermocompression bonding to the pad.
[0029]
When the gold wire 2 having the tip connected to the substrate is connected to the inner lead or the like of the other semiconductor chip to be connected, the capillary 6 is moved to the position of the inner lead, and the gold wire 2 is moved to the tip side of the capillary 6. , And ultrasonic vibration is applied to the gold wire 2 through the transducer 5, and the gold wire 2 is ultrasonically thermocompression bonded to the inner lead. Thereby, the gold wire 2 is looped and connected. When cutting the gold wire 2, the gap between the movable plate 14 and the fixed plate 12 is narrowed to close the sandwiching electrodes 16 and 17. Thereby, the gold wire 2 is clamped. By moving the entire cut clamper 10 upward in a state where the gold wire 2 is sandwiched, tension is applied to the gold wire 2 and the gold wire 2 is cut.
[0030]
As described above, the first embodiment has the following effects (1) to (3).
[0031]
(1) FIG. 3 is a diagram showing the relationship between the sandwiching electrodes 16 and 17 and the gold wire 2.
[0032]
In the conventional wire bonding method, since a circular sandwiching electrode is used, when the center of the sandwiching electrode is sandwiched so that the gold wire 2 passes, and when the gold wire 2 is sandwiched without passing through the center Then, the length by which the gold wire 2 is clamped is different. On the other hand, when the gold wire 2 is sandwiched between the rectangular sandwiching electrodes 16 and 17, since the opposite sides are parallel, the gold wire 2 does not pass through the centers of the sandwiching electrodes 16 and 17 as shown in FIG. The clamped length of the gold wire 2 becomes equal. Therefore, there is no variation in the applied voltage for discharging in the air, and the gold sphere 2a having a stable size can be formed.
[0033]
(2) Since the sandwiching electrodes 16 and 17 whose working surfaces are rectangular are used, it is not necessary to align the center positions of the sandwiching electrodes 16 and 17 with high accuracy and the sandwiching of the gold wire 2 between the sandwiching electrodes 16 and 17 is possible. It is not necessary to adjust the center position with high accuracy, and management becomes easy.
[0034]
(3) Since the sandwiching electrodes 16 and 17 whose working surfaces are rotatable are used, if the working surfaces of the sandwiching electrodes 16 and 17 are rotated during regular management, the gold wire 2 can be connected without wear. Can be pinched. Therefore, it is no longer necessary to perform highly accurate parallel positioning of the working surface for each periodic management, which has been conventionally performed for each periodic management, and the frequency of the highly accurate parallel positioning can be reduced.
[0035]
(Second Embodiment)
FIGS. 4A and 4B are configuration diagrams of a cut clamper used in the wire bonding method according to the second embodiment of the present invention. FIG. 4A is an overall configuration, and FIG. Shows the sandwiching electrodes 26 and 27 in FIG.
[0036]
  This cut clamper is a modification of the cut clamper 10 in the wire bonder of FIG. 1 showing the first embodiment. Similarly to FIG. 2 showing the cut clamper 10, a fixed plate 22 attached to the shaft 21, And a movable plate 24 attached to a telescopic shaft 23. A pair of cermet-made first and second sandwiching electrodes 26 and 27 are attached to the fixed plate 22 and the movable plate 24, respectively. The sandwiching electrodes 26 and 27 are used both for sandwiching the gold wire 2 and for applying a predetermined potential to the gold wire 2. Unlike the first embodiment, these sandwiching electrodes 26 and 27 are used. , 27 are formed with innumerable minute protrusions that make point contact with the gold wire 2. The working surfaces of the sandwiching electrodes 26 and 27 are both rectangular in shape, and are not only mounted in parallel so that the working surfaces face each other but also rotatably mounted. Between the movable plate 24 and the shaft 21, the movement of the movable plate 24 is corrected.DoA spring 28 is attached.
[0037]
In the wire bonding method using the wire bonder to which the cut clamper is attached, the gold wire 2 is placed between the pad formed on the circuit board and the inner lead of the semiconductor chip by the same method as in the first embodiment. Connect with. Also, regular management is performed in the same manner as in the first embodiment.
[0038]
As described above, in the second embodiment, as in the first embodiment, the working surfaces of the sandwiching electrodes 26 and 27 of the cut clamper are made rectangular, and the working surfaces of the sandwiching electrodes 26 and 27 are rotated. Since what is made possible is used, as in the first embodiment, the holding length of the gold wire 2 becomes equal, there is no variation in the discharge applied voltage, and the gold ball 2a having a stable size is formed. Therefore, it is not necessary to adjust the center positions of the sandwiching electrodes 26 and 27 and the sandwiching center position of the gold wire 2 with high accuracy, management becomes easy, and the frequency of parallel positioning can be reduced. In addition, since the infinite number of protrusions formed on the working surfaces of the sandwiching electrodes 26 and 27 are used, the gold wire 2 can be prevented from slipping, thereby stabilizing the electrode interval (electrode length) in the air discharge, Variations in the size of the gold sphere 2a are reduced, and the quality is more stable than in the first embodiment.
[0039]
(Third embodiment)
[0040]
FIGS. 5A and 5B are schematic configuration diagrams of a wire bonder used in the wire bonding method showing the third embodiment of the present invention. FIG. 5A is a front view and FIG. ) Is a side view of the main part of FIG.
[0041]
A spool 31a similar to that of the first embodiment is set in the spool unit 31 of the wire bonder. A gold wire 32 as a bonding wire is wound around the spool 31a. The gold wire 32 fed out from the spool 31 a is guided to the gold wire guide 33 and passes through the center hole of the air clamper 34. The gold wire 32 coming out of the air clamper 34 is inserted from the rear end side to the front end side of the central hole of the cylindrical capillary 36 supported by the transducer 35. The transducer 35 has a function of moving the capillary 36 and pressing the tip of the capillary 36 against the connection target of the gold wire 32 and a function of applying ultrasonic vibration to the capillary 36. A torch rod 37 is disposed near the tip of the capillary 36.
[0042]
Unlike the first embodiment, two sets of cut clampers of a first cut clamper 38 and a second cut clamper 39 are arranged between the rear end side of the capillary 36 and the air clamper 34. The cut clamper 38 has, for example, the same configuration as the cut clamper 10 of the first embodiment, and a fixed plate 38a and a second plate which are first support members corresponding to the fixed plate 12 and the movable plate 14 of FIG. The movable plate 38b, which is a supporting member, and the thin plate-like rectangular shape (for example, a quadrilateral shape) which is the first and second clamping means corresponding to the first and second clamping electrodes 16 and 17 in FIG. Electrodes 38c and 38d are provided. The cut clamper 39 has the same configuration as that of the cut clamper 10 of the first embodiment, and a fixed plate 39a and a fourth plate which are third support members corresponding to the fixed plate 12 and the movable plate 14 of FIG. A movable plate 39b as a support member and thin plate-like rectangular (eg, quadrilateral) sandwiching electrodes 39c and 39d corresponding to the sandwiching electrodes 16 and 17 in FIG. ing.
[0043]
Next, a wire bonding method using this wire bonder will be described.
[0044]
For example, when connecting and wiring between a pad formed on a silicon substrate, which is a circuit board, and an inner lead of a semiconductor chip, a gold ball 32 a is formed on a gold wire 32 protruding from the tip side of the capillary 36. At this time, the movable plate 38b of the cut clamper 38 is moved toward the fixed plate 38a to narrow the distance, and the gold wire 32 is clamped by the clamping electrodes 38c and 38d. A unique potential is applied to each of the sandwiching electrodes 38c and 38d and the torch rod 37, and a discharge voltage is applied. When the discharge voltage is applied, the tip of the gold wire 32 protruding from the tip side of the capillary 36 is discharged in the air, and the gold wire 32 melts into a spherical molten ball. When the application of the discharge voltage is stopped, the molten ball is cooled to become a gold ball 32a.
[0045]
After forming the gold sphere 32a, the gap between the movable plate 38b and the fixed plate 38a is opened to open the sandwiching electrodes 38c and 38d, and the transducer 35 presses the tip of the capillary 36 against the substrate pad. Thereby, the gold ball 32a is pressed against the pad. In this state, ultrasonic vibration is applied to the capillary 36 through the transducer 35, and the ultrasonic vibration is transmitted to the gold ball 32a. Here, if the substrate is heated, the gold ball 32a at the tip of the gold wire 32 is ultrasonically bonded to the pad.
[0046]
When the gold wire 32 whose tip is connected to the substrate is connected to the inner lead or the like of the other semiconductor chip to be connected, the capillary 36 is moved to the position of the inner lead, and the gold wire 32 is moved to the tip of the capillary 36. Then, ultrasonic vibration is applied to the gold wire 32 through the transducer 35. As a result, the gold wire 32 is ultrasonically thermocompression bonded to the inner lead. When cutting the gold wire 32, the gap between the movable plate 39b and the fixed plate 39a of the cut clamper 39 is narrowed to close the sandwiching electrodes 39c and 39d. Thereby, the gold wire 32 is clamped. By moving the entire cut clamper 39 upward in a state where the gold wire 32 is sandwiched, tension is applied to the gold wire 32 and the gold wire 32 is cut.
[0047]
As described above, in the third embodiment, two sets of cut clampers 38 and 39 are provided, and the cut clamper 38 used when the air discharge is performed and the cut clamper 39 used when cutting the gold wire 32 are switched. I try to control it. Therefore, since the sandwiching electrodes 38c and 38d that are worn by the air discharge of the gold wire 32 are not used when the air discharge is not performed, the influence on the looping of the gold wire 32 is reduced, and stable wiring is possible. Further, since the sandwiching electrodes 38c and 38d and the sandwiching electrodes 39c and 39d are used independently, a more stable feeding amount of the gold wire 32 can be obtained, gold balls can be formed with less variation, and quality is improved. To do. Furthermore, since wear in the sandwiching electrodes 38c and 38d and the sandwiching electrodes 39c and 39d is suppressed, it is advantageous in terms of regular management.
[0048]
(Fourth embodiment)
[0049]
FIG. 6 is a configuration diagram of a cut clamper used in the wire bonding method according to the fourth embodiment of the present invention.
[0050]
  This cut clamper is a modification of the cut clamper 10 in the wire bonder of the first embodiment, and shows the cut clamper 10.FIG.In the same manner as described above, a fixed plate 42 attached to the shaft 41 and a movable plate 44 attached to the telescopic shaft 43 are provided, and the distance between the fixed plate 42 and the movable plate 44 is changed by a solenoid 45. It is supposed to be. A pair of cermet first and second sandwiching electrodes 46 and 47 are rotatably attached to the fixed plate 42 and the movable plate 44, respectively. A spring 48 for correcting the movement of the movable plate 44 is attached between the movable plate 44 and the shaft 41. A heater 49 that is not provided in the first embodiment is attached to the movable plate 44. The heater 49 heats the gold wire by heating the sandwiching electrode 47.
[0051]
In the wire bonding method using such a cut clamper, the pad formed on the substrate and the inner lead of the semiconductor chip are made of gold by heating the holding electrode 47 with the heater 49 and using the same method as in the first embodiment. Connect with wires. The regular management is performed in the same manner as in the first embodiment.
[0052]
As described above, in the fourth embodiment, since the heater 49 for heating the clamping electrode 47 is attached to the cut clamper, the gold wire is heated in the air and the gold wire is looped. Can do. Therefore, variation in hardness of the formed gold sphere can be suppressed, and the quality is stabilized. Furthermore, the control of the gold wire is facilitated, and the stability of the looping is improved.
[0053]
In addition, this invention is not limited to the said embodiment, A various deformation | transformation is possible. Examples of such modifications include the following.
[0054]
(1) The heater 49 as in the fourth embodiment can be attached to the cut clamper of FIG. 4 described in the second embodiment.
[0055]
(2) In the wire bonder of the third embodiment, the cut clampers 38 and 39 having the same configuration as the cut clamper 10 of the first embodiment are used. However, each of the cut clampers 38 and 39 is the same as that of the second embodiment. The cut clamper shown in FIG. 4 or the cut clamper shown in FIG. 6 according to the fourth embodiment can be used.
[0056]
(3) In the cut clamper of FIG. 6, the heater 49 is attached to the movable plate 44 side, but may be used by being attached to the fixed plate 42 side or both the movable plate 44 and the fixed plate 42.
[0057]
(4) The positions of the cut clampers 38 and 39 can be reversed, and the cut clamper 38 may be disposed near the capillary 36.
[0058]
【The invention's effect】
[0059]
  As explained in detail above, claim 1 of the present invention,6-9According to the invention according to the present invention, since the sandwiching electrode whose working surface is rotatable is used, it is not necessary to sandwich the wire at the worn part only by rotating these. The frequency of positioning can be reduced.
  According to the second, fifth, and seventh aspects of the present invention, since the sandwiching electrode having the rectangular working surface is used, the length for sandwiching the wire is stabilized, and the size of the ball portion of the wire is stabilized. In addition, it is not necessary to align the center position of the sandwiching electrode with high precision, and it is not necessary to align the sandwiching center position of the sandwiching electrode with high precision, thereby facilitating management.
[0060]
  Claim 3,8According to the invention, since the sandwiching electrode having a plurality of minute protrusions provided on the working surface is used, the wire can be prevented from slipping by the minute protrusions, and the size of the ball portion of the wire is stabilized.
  Claim 4,9According to the invention, since the wire is heated by the heater attached to the member that supports the sandwiching electrode, the wire can be discharged in the air while the wire is heated, and the wire can be looped. Therefore, the variation in hardness of the formed molten ball can be suppressed, and the quality is stabilized. Furthermore, it becomes easy to control the welding of the wire, and the stability of the looping is improved.
[0061]
  According to the sixth aspect of the invention, the first sandwiching electrode is aerial discharged using the first sandwiching electrode, the wire is cut using the second sandwiching electrode, and the first sandwiching electrode worn by the air discharge of the wire is subjected to the air discharge. Since it is not used when it is not, the influence on the looping of the wire is reduced, and stable wiring becomes possible. In addition, since the first sandwiching electrode and the second sandwiching electrode are used independently, a more stable wire feed amount can be obtained, molten ball formation with less variation can be performed, and quality can be improved. Furthermore, since wear in the first sandwiching electrode and the second sandwiching electrode is suppressed, it is advantageous in terms of regular management.
[Brief description of the drawings]
FIG. 1 is a configuration diagram of a cut clamper used in a wire bonding method according to a first embodiment of the present invention.
FIG. 2 is a schematic configuration diagram of a wire bonder used in the wire bonding method according to the first embodiment of the present invention.
FIG. 3 is a diagram showing a relationship between a sandwiching electrode and a gold wire.
FIG. 4 is a configuration diagram of a cut clamper used in a wire bonding method showing a second embodiment of the present invention.
FIG. 5 is a schematic configuration diagram of a wire bonder used in a wire bonding method showing a third embodiment of the present invention.
FIG. 6 is a configuration diagram of a cut clamper used in a wire bonding method according to a fourth embodiment of the present invention.
[Explanation of symbols]
1a, 31a spool
2,32 gold wire
2a, 32a gold ball
3,33 gold wire guide
4,34 Air clamper
5,35 transducer
6,36 Capillary
7,37 Torch rod
10, 38, 39 Cut clamper
12, 22, 38a, 39a, 42 fixing plate
14, 24, 38b, 39b, 44 Movable plate
16, 17, 26, 27, 38c, 38d, 39c, 39d, 46, 47
49 Heater

Claims (9)

半導体チップ上のパッドと前記半導体チップが搭載された回路基板上のパッドとの間を接続するワイヤボンディング方法において、
作用面がそれぞれ回転可能に設けられている１対の挾持電極間にワイヤを挾持する工程と、
トーチロッドにより前記ワイヤに第１の電位を印加する工程と、
前記挾持電極により前記ワイヤに直接第２の電位を印加して前記の先端に溶融ボールを形成する工程と、
前記溶融ボールを固化する工程と、
前記ワイヤを開放する工程と、
前記回路基板のパッドに前記固化したボールをキャピラリにより押し付ける工程と、
前記固化したボールを前記回路基板のパッドに圧着するために超音波振動を与える工程と、
前記挾持電極間に前記ワイヤを再度挾持し、前記挾持電極を前記回路基板のパッドから離れる方向に移動させることにより前記ワイヤを切断する工程と、
を含むことを特徴とするワイヤボンディング方法。In a wire bonding method for connecting between a pad on a semiconductor chip and a pad on a circuit board on which the semiconductor chip is mounted,
Holding the wire between a pair of holding electrodes each having a working surface rotatably provided;
Applying a first potential to the wire by a torch rod;
Applying a second potential directly to the wire by the holding electrode to form a molten ball at the tip;
Solidifying the molten ball;
Opening the wire;
Pressing the solidified ball against the pad of the circuit board with a capillary;
Applying ultrasonic vibrations to crimp the solidified balls to the pads of the circuit board;
Re-gripping the wire between the holding electrodes, and cutting the wire by moving the holding electrode in a direction away from the pad of the circuit board;
A wire bonding method comprising: 請求項１記載のワイヤボンディング方法において、前記作用面は矩形であることを特徴とするワイヤボンディング方法。  2. The wire bonding method according to claim 1, wherein the working surface is rectangular. 半導体チップ上のパッドと前記半導体チップが搭載された回路基板上のパッドとの間を接続するワイヤボンディング方法において、
それぞれ矩形形状の作用面を有し、かつ前記作用面にはワイヤに点接触する複数の微小突起が設けられている１対の挾持電極間に前記ワイヤを挾持する工程と、
トーチロッドにより前記ワイヤに第１の電位を印加する工程と、
前記挾持電極により前記ワイヤに直接第２の電位を印加して前記ワイヤの先端に溶融ボールを形成する工程と、
前記溶融ボールを固化する工程と、
前記ワイヤを開放する工程と、
前記回路基板のパッドに前記固化したボールをキャピラリにより押し付ける工程と、
前記固化したボールを前記回路基板のパッドに圧着するために超音波振動を与える工程と、
前記挾持電極間に前記ワイヤを再度挾持し、前記挾持電極を前記回路基板のパッドから離れる方向に移動させることにより前記ワイヤを切断する工程と、
を含むことを特徴とするワイヤボンディング方法。In a wire bonding method for connecting between a pad on a semiconductor chip and a pad on a circuit board on which the semiconductor chip is mounted,
Holding the wire between a pair of holding electrodes each having a rectangular working surface and provided with a plurality of microprotrusions in point contact with the wire;
Applying a first potential to the wire by a torch rod;
Applying a second potential directly to the wire by the holding electrode to form a molten ball at the tip of the wire;
Solidifying the molten ball;
Opening the wire;
Pressing the solidified ball against the pad of the circuit board with a capillary;
Applying ultrasonic vibrations to crimp the solidified balls to the pads of the circuit board;
Re-gripping the wire between the holding electrodes, and cutting the wire by moving the holding electrode in a direction away from the pad of the circuit board;
A wire bonding method comprising: 半導体チップ上のパッドと前記半導体チップが搭載された回路基板上のパッドとの間を接続するワイヤボンディング方法において、
それぞれ作用面を有する１対の挾持電極間にワイヤを挾持する工程と、
前記ワイヤを、前記１対の挟持電極のそれぞれを支持する部材の少なくとも一方に取り付けられたヒータによって加熱する工程と、
トーチロッドにより前記ワイヤに第１の電位を印加する工程と、
前記挾持電極により前記ワイヤに直接第２の電位を印加して前記ワイヤの先端に溶融ボールを形成する工程と、
前記溶融ボールを固化する工程と、
前記ワイヤを開放する工程と、
前記回路基板のパッドに前記固化したボールをキャピラリにより押し付ける工程と、
前記固化したボールを前記回路基板のパッドに圧着するために超音波振動を与える工程と、
前記挾持電極間に前記ワイヤを再度挾持し、前記挾持電極を前記回路基板のパッドから離れる方向に移動させることにより前記ワイヤを切断する工程と、
を含むことを特徴とするワイヤボンディング方法。In a wire bonding method for connecting between a pad on a semiconductor chip and a pad on a circuit board on which the semiconductor chip is mounted,
Holding the wire between a pair of holding electrodes each having a working surface;
Heating the wire with a heater attached to at least one of the members supporting each of the pair of sandwiching electrodes;
Applying a first potential to the wire by a torch rod;
Applying a second potential directly to the wire by the holding electrode to form a molten ball at the tip of the wire;
Solidifying the molten ball;
Opening the wire;
Pressing the solidified ball against the pad of the circuit board with a capillary;
Applying ultrasonic vibrations to crimp the solidified balls to the pads of the circuit board;
Re-gripping the wire between the holding electrodes, and cutting the wire by moving the holding electrode in a direction away from the pad of the circuit board;
A wire bonding method comprising: 請求項４記載のワイヤボンディング方法において、前記作用面は矩形であることを特徴とするワイヤボンディング方法。  5. The wire bonding method according to claim 4, wherein the working surface is rectangular. 半導体チップ上のパッドと前記半導体チップが搭載された回路基板上のパッドとの間を接続するワイヤボンディング方法において、
それぞれ作用面を有する１対の第１挾持電極と、それぞれ作用面を有する１対の第２挾持電極との内、１対の前記第１挟持電極が有する前記作用面及び１対の前記第２挟持電極が有する前記作用面の少なくとも１対の前記作用面は、それぞれ回転可能に設けられた１対の前記第１挟持電極及び１対の前記第２挟持電極を用い、
１対の前記第１挾持電極間にワイヤを挾持する工程と、
トーチロッドにより前記ワイヤに第１の電位を印加する工程と、
前記第１挾持電極により前記ワイヤに直接第２の電位を印加して前記ワイヤの先端に溶融ボールを形成する工程と、
前記溶融ボールを固化する工程と、
前記ワイヤを開放する工程と、
前記回路基板のパッドに前記固化したボールをキャピラリにより押し付ける工程と、
前記固化したボールを前記回路基板のパッドに圧着するために超音波振動を与える工程と、
１対の前記第２挾持電極間に前記ワイヤを再度挾持し、前記第２挾持電極を前記回路基板のパッドから離れる方向に移動させることにより前記ワイヤを切断する工程と、
を含むことを特徴とするワイヤボンディング方法。In a wire bonding method for connecting between a pad on a semiconductor chip and a pad on a circuit board on which the semiconductor chip is mounted,
Of the pair of first sandwiching electrodes each having a working surface and the pair of second sandwiching electrodes each having a working surface, the working surface and the pair of second second electrodes possessed by a pair of the first sandwiching electrodes At least one pair of the working surfaces of the working surface of the sandwiching electrode uses a pair of the first sandwiching electrodes and a pair of the second sandwiching electrodes that are rotatably provided, respectively.
Holding a wire between the pair of first holding electrodes ;
Applying a first potential to the wire by a torch rod;
Applying a second potential directly to the wire by the first holding electrode to form a molten ball at the tip of the wire;
Solidifying the molten ball;
Opening the wire;
Pressing the solidified ball against the pad of the circuit board with a capillary;
Applying ultrasonic vibrations to crimp the solidified balls to the pads of the circuit board;
Cutting the wire by holding the wire again between the pair of second holding electrodes and moving the second holding electrode away from the pad of the circuit board;
A wire bonding method comprising: 請求項６記載のワイヤボンディング方法において、１対の前記第１挟持電極が有する前記作用面及び１対の前記第２挟持電極が有する前記作用面の少なくとも１対の前記作用面は、それぞれ矩形形状であることを特徴とするワイヤボンディング方法。  The wire bonding method according to claim 6, wherein at least one pair of the working surfaces of the working surface of the pair of first sandwiching electrodes and the working surface of the pair of second sandwiching electrodes has a rectangular shape. A wire bonding method characterized by the above. 請求項６又は請求項７記載のワイヤボンディング方法において、前記１対の第１挟持電極が有する前記作用面及び前記１対の第２挟持電極が有する前記作用面の少なくとも１対の前記作用面には、前記ワイヤに点接触する複数の微小突起が設けられていることを特徴とするワイヤボンディング方法。  8. The wire bonding method according to claim 6 or 7, wherein at least one pair of the working surfaces of the working surface of the pair of first sandwiching electrodes and the working surface of the pair of second sandwiching electrodes is provided. A wire bonding method characterized in that a plurality of minute protrusions that make point contact with the wire are provided. 請求項６、請求項７又は請求項８記載のワイヤボンディング方法において、それぞれ作用面を有する１対の前記第１挾持電極間にワイヤを挾持する工程の後であって、前記トーチロッドにより前記ワイヤに第１の電位を印加する工程の前に、前記ワイヤを、１対の前記第１挟持電極のそれぞれを支持する部材の少なくとも一方に取り付けられたヒータによって加熱する工程をさらに含むことを特徴とするワイヤボンディング方法。  9. The wire bonding method according to claim 6, wherein the wire is clamped by the torch rod after the step of gripping the wire between the pair of first gripping electrodes each having a working surface. The method further includes the step of heating the wire by a heater attached to at least one of the members supporting each of the pair of first sandwiching electrodes before the step of applying the first potential to the pair. Wire bonding method.
JP2002128174A 2002-04-30 2002-04-30 Wire bonding method Expired - Fee Related JP3715942B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002128174A JP3715942B2 (en) 2002-04-30 2002-04-30 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002128174A JP3715942B2 (en) 2002-04-30 2002-04-30 Wire bonding method

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP03736899A Division JP3403661B2 (en) 1999-02-16 1999-02-16 Wire bonder

Publications (2)

Publication Number Publication Date
JP2002343825A JP2002343825A (en) 2002-11-29
JP3715942B2 true JP3715942B2 (en) 2005-11-16

Family

ID=19194280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002128174A Expired - Fee Related JP3715942B2 (en) 2002-04-30 2002-04-30 Wire bonding method

Country Status (1)

Country Link
JP (1) JP3715942B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240105673A1 (en) * 2021-08-26 2024-03-28 Shinkawa Ltd. Bonding apparatus and alignment method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116929277B (en) * 2023-06-29 2024-05-28 浙江佳博科技股份有限公司 Quality detection method and monitoring mechanism for bonding copper wire processing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240105673A1 (en) * 2021-08-26 2024-03-28 Shinkawa Ltd. Bonding apparatus and alignment method

Also Published As

Publication number Publication date
JP2002343825A (en) 2002-11-29

Similar Documents

Publication Publication Date Title
US6357650B1 (en) Method of wire-bonding between pad on semiconductor chip and pad on circuit board on which the semiconductor chip is mounted
JP3715942B2 (en) Wire bonding method
US5326014A (en) Head of ultrasonic wire bonding apparatus and bonding method
WO2015125671A1 (en) Method for producing semiconductor device, and wire-bonding device
US5626276A (en) Linkage drive mechanism for ultrasonic wirebonding
JPS5940537A (en) Manufacture of semiconductor device
JPH0927377A (en) Connection method for wire and connection device
JP3425510B2 (en) Bump bonder forming method
JPH019156Y2 (en)
JP4229544B2 (en) Gas sensor and manufacturing method thereof
JPH1032294A (en) Semiconductor package outer lead bending method and device
JP3356072B2 (en) Gang bonding apparatus and gang bonding method
JPH06204302A (en) Wire bonding device
JP2716424B2 (en) Wire bonding equipment
JP4796601B2 (en) Manufacturing method of contactor for electronic parts
JP2000270574A (en) Piezoelectric actuator and its manufacture
JP4570898B2 (en) Contactor manufacturing equipment
JPS6316632A (en) Manufacture of semiconductor device
JP2511263Y2 (en) Bump electrode forming device
JPH098077A (en) Wire bonding equipment
JPH07283221A (en) Bump forming method
JPH04361536A (en) Manufacture of semiconductor device
JPH05269695A (en) Bump forming method and device therefor
JP2002164379A (en) Apparatus and method for wire bonding and semiconductor device
JPH09148381A (en) Ic module, its manufacturing method, ic chip and ic module for ic card

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050215

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050415

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050517

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050719

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20050823

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20050826

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080902

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090902

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090902

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100902

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100902

Year of fee payment: 5

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313115

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100902

Year of fee payment: 5

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100902

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110902

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120902

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130902

Year of fee payment: 8

LAPS Cancellation because of no payment of annual fees
S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350