JPH06204302A - Wire bonding device - Google Patents

Wire bonding device

Info

Publication number
JPH06204302A
JPH06204302A JP36095892A JP36095892A JPH06204302A JP H06204302 A JPH06204302 A JP H06204302A JP 36095892 A JP36095892 A JP 36095892A JP 36095892 A JP36095892 A JP 36095892A JP H06204302 A JPH06204302 A JP H06204302A
Authority
JP
Japan
Prior art keywords
bonding
capillary
wire
electrode pad
shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP36095892A
Other languages
Japanese (ja)
Other versions
JP3274731B2 (en
Inventor
Takeyuki Shinkawa
雄之 新川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Mechatronics Co Ltd
Original Assignee
Toshiba Seiki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Seiki Co Ltd filed Critical Toshiba Seiki Co Ltd
Priority to JP36095892A priority Critical patent/JP3274731B2/en
Publication of JPH06204302A publication Critical patent/JPH06204302A/en
Application granted granted Critical
Publication of JP3274731B2 publication Critical patent/JP3274731B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
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    • H01L2224/78Apparatus for connecting with wire connectors
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    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • H01L2224/78308Removable capillary
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    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85203Thermocompression bonding
    • HELECTRICITY
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
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    • H01L2924/01004Beryllium [Be]
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To improve bonding strength without having a wire-bonding part jutting out from an electrode pad by widening the area of wire bonding part against the electrode pad. CONSTITUTION:In a wire-bonding device 10, a plurality of piezo-electric elements 31 to 34, which will be adjacently arranged with each other on a plurality of positions in the circumferential direction of a capillary 10 on the capillary retaining part 17A of a bonding arm 17, are provided and a voltage supply part, which supplies voltage of prescribed positional deviation with each other, to the piezoelectric elements 31 to 34, is provided.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体ペレット上の電
極パッドやリードフレームのインナーリード等のボンデ
ィング点に導電性ワイヤをボンディングするワイヤボン
ディング装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding apparatus for bonding a conductive wire to a bonding point such as an electrode pad on a semiconductor pellet or an inner lead of a lead frame.

【0002】[0002]

【従来の技術】従来、ワイヤボンディング装置として、
ボンディングアームのキャピラリ保持部にキャピラリを
保持し、このキャピラリに導電性ワイヤを通し、このキ
ャピラリに超音波振動を付与しながら導電性ワイヤをボ
ンディング点にボンディングするものがある。
2. Description of the Related Art Conventionally, as a wire bonding device,
There is a method in which a capillary is held in a capillary holding portion of a bonding arm, a conductive wire is passed through the capillary, and the conductive wire is bonded to a bonding point while applying ultrasonic vibration to the capillary.

【0003】この時、従来技術は、ボンディングアーム
の長手方向の先端部にキャピラリ保持部を設け、ボンデ
ィングアームの長手方向の基端部に超音波振動子を設
け、この超音波振動子を発振させることにより、キャピ
ラリにボンディングアームの長手方向に沿う一方向の振
動を付与するものである。従って、従来技術では、キャ
ピラリに通されたワイヤのボール状先端部は電極パッド
上で一方向にのみ運動(直線運動)せしめられ、ボンデ
ィング形状は図3(B)に示す如くの細長いだ円形状と
なる。図3において、1は電極パッド、2はワイヤ接合
部である。
At this time, according to the prior art, a capillary holding portion is provided at the tip of the bonding arm in the longitudinal direction, an ultrasonic transducer is provided at the proximal end of the bonding arm in the longitudinal direction, and the ultrasonic transducer is oscillated. As a result, the capillary is oscillated in one direction along the longitudinal direction of the bonding arm. Therefore, in the prior art, the ball-shaped tip of the wire passed through the capillary is moved (linearly moved) in only one direction on the electrode pad, and the bonding shape is an elongated elliptical shape as shown in FIG. 3 (B). Becomes In FIG. 3, 1 is an electrode pad, and 2 is a wire bonding part.

【0004】[0004]

【発明が解決しようとする課題】然しながら、従来技術
には下記、の問題点がある。 ボンディング形状がだ円形状であって細長状となるた
め、その長径を直径とする円形状のボンディング形状に
比して、電極パッドに対するワイヤの接合面積が狭く、
ボンディング強度が弱い。特に、電極パッド自体の面積
が狭いペレットについて行なう小ボールボンディングで
は、電極パッド面積を有効に利用して電極パッドに対す
るワイヤの接合面積を広くし、ボンディング強度を向上
することが望まれるが、上記理由によりその実現が難し
かった。
However, the prior art has the following problems. Since the bonding shape is elliptical and elongated, the bonding area of the wire to the electrode pad is narrower than that of a circular bonding shape whose major axis is the diameter.
Bonding strength is weak. In particular, in small ball bonding performed for pellets having a small area of the electrode pad itself, it is desired to effectively utilize the electrode pad area to widen the bonding area of the wire to the electrode pad and improve the bonding strength. This made it difficult to achieve.

【0005】ボンディング形状がだ円形状であって細
長状となるため、電極パッドに対するワイヤの接合面積
を広くしようとすると、ワイヤ接合部が電極パッドから
はみ出し易い。特に、前述の小ボールボンディングで
は、電極パッド自体が狭い上に、電極パッド間のピッチ
も狭いため、電極パッドからはみ出したワイヤ接合部が
ショートの原因になるという危険性を有する。
Since the bonding shape is an elliptical shape and has an elongated shape, the wire bonding portion easily extends from the electrode pad when the bonding area of the wire to the electrode pad is increased. Particularly, in the above-mentioned small ball bonding, since the electrode pads themselves are narrow and the pitch between the electrode pads is also narrow, there is a risk that the wire bonding portion protruding from the electrode pads may cause a short circuit.

【0006】本発明は、ワイヤ接合部が電極パッドから
はみ出すことなく、電極パッドに対するワイヤの接合面
積を広くしてボンディング強度を向上することを目的と
する。
An object of the present invention is to increase the bonding strength by widening the bonding area of the wire to the electrode pad without the wire bonding portion protruding from the electrode pad.

【0007】[0007]

【課題を解決するための手段】本発明は、ボンディング
アームのキャピラリ保持部にキャピラリを保持し、この
キャピラリに導電性ワイヤを通し、このキャピラリに超
音波振動を付与しながら導電性ワイヤをボンディング点
にボンディングするワイヤボンディング装置において、
ボンディングアームのキャピラリ保持部におけるキャピ
ラリまわりの周方向複数位置に互いに隣接配置される複
数個の圧電素子と、各圧電素子に互いに所定の位相ずれ
を有する電圧を供給する電圧供給部とを有するようにし
たものである。
According to the present invention, a capillary is held in a capillary holding portion of a bonding arm, a conductive wire is passed through the capillary, and the conductive wire is bonded at a bonding point while applying ultrasonic vibration to the capillary. In the wire bonding device for bonding to
A plurality of piezoelectric elements arranged adjacent to each other at a plurality of positions in the circumferential direction around the capillaries in the capillary holding section of the bonding arm, and a voltage supply section for supplying a voltage having a predetermined phase shift to each piezoelectric element. It was done.

【0008】[0008]

【作用】電圧供給部から各圧電素子に供給される電圧
の位相調整により、キャピラリに円軌跡の振動を与える
ことができ、キャピラリに通されたワイヤのボール状先
端部は電極パッド上で円運動を付与せしめられる結果、
ボンディング形状は図3(A)に示す如くの円形状にな
る。
[Function] By adjusting the phase of the voltage supplied from the voltage supply unit to each piezoelectric element, a circular locus vibration can be applied to the capillary, and the ball-shaped tip of the wire passed through the capillary moves circularly on the electrode pad. As a result,
The bonding shape is a circular shape as shown in FIG.

【0009】上記により、ボンディング形状が円形
状であって縦横比がほぼ同等になるため、電極パッドに
対するワイヤの接合面積が広く、ボンディング強度を向
上できる。特に、電極パッド自体の面積が狭いペレット
に対して行なう小ボールボンディングでは、電極パッド
面積を有効に利用して電極パッドに対するワイヤの接合
面積を広くし、ボンディング強度を向上できる。
As described above, since the bonding shape is circular and the aspect ratio is almost the same, the bonding area of the wire to the electrode pad is wide and the bonding strength can be improved. In particular, in small ball bonding performed on a pellet having a small area of the electrode pad itself, the bonding area of the wire to the electrode pad can be increased by effectively utilizing the electrode pad area, and the bonding strength can be improved.

【0010】上記により、ボンディング形状が円形
状であって縦横比がほぼ同等になるため、電極パッドに
対するワイヤの接合面積を広くしながらも、ワイヤ接合
部の電極パッドからのはみ出しを防止できる。特に、小
ボールボンディングにおいて、電極パッド自体が狭い上
に、電極パッド間のピッチが狭い場合にも、電極パッド
からのワイヤ接合部のはみ出しを防止し、ショートの発
生を回避できる。
As described above, since the bonding shape is circular and the aspect ratios are almost the same, it is possible to prevent the wire bonding portion from protruding from the electrode pad while increasing the bonding area of the wire to the electrode pad. In particular, in the small ball bonding, even when the electrode pads themselves are narrow and the pitch between the electrode pads is narrow, it is possible to prevent the wire bonding portion from protruding from the electrode pads and avoid the occurrence of a short circuit.

【0011】[0011]

【実施例】図1は本発明の一実施例に係るボンディング
装置を示す模式図、図2は各圧電素子への電圧供給調整
方法とキャピラリの振動状態を示す模式図、図3はボン
ディング形状を示す模式図である。
FIG. 1 is a schematic diagram showing a bonding apparatus according to an embodiment of the present invention, FIG. 2 is a schematic diagram showing a method of adjusting voltage supply to each piezoelectric element and a vibrating state of a capillary, and FIG. It is a schematic diagram which shows.

【0012】ボンディング装置10は、図1に示す如
く、XYテーブル11上にボンディングヘッド12を搭
載している。ボンディングヘッド12には、支軸13ま
わりに揺動可能に、枠体14と支持体15とが同軸支持
されている。
As shown in FIG. 1, the bonding apparatus 10 has a bonding head 12 mounted on an XY table 11. A frame body 14 and a support body 15 are coaxially supported by the bonding head 12 so as to be swingable around a support shaft 13.

【0013】ボンディングヘッド12には、モータ(不
図示)と、このモータによって揺動される回転板16と
が設けられており、枠体14には回転板16のピン16
Aを挟むように2本のアーム14A、14Aが設けられ
ている。これにより、枠体14は、回転板16の揺動に
伴い、支軸13まわりに上下に揺動する。
The bonding head 12 is provided with a motor (not shown) and a rotary plate 16 which is swung by the motor. The frame body 14 has pins 16 of the rotary plate 16.
Two arms 14A and 14A are provided so as to sandwich A. As a result, the frame body 14 swings up and down around the support shaft 13 as the rotary plate 16 swings.

【0014】支持体15にはボンディングアーム17の
基端部が一体化されている。また、支持体15はバネ1
8により枠体14のストッパ14Bに押し当てられ、枠
体14の上下動と一体に上下(Z方向)に揺動する。
A base end of a bonding arm 17 is integrated with the support 15. In addition, the support 15 is the spring 1.
It is pressed against the stopper 14B of the frame body 14 by 8 and swings vertically (Z direction) integrally with the vertical movement of the frame body 14.

【0015】ボンディングアーム17の先端部のキャピ
ラリ保持部17Aにはキャピラリ19が保持され、この
キャピラリ19には金線、アルミニウム線等の導電性ワ
イヤ20が通される。19Aはワイヤ挿通孔である。
A capillary 19 is held in a capillary holding portion 17A at the tip of the bonding arm 17, and a conductive wire 20 such as a gold wire or an aluminum wire is passed through the capillary 19. 19A is a wire insertion hole.

【0016】尚、XYテーブル11の前面側には、リー
ドフレーム21を間欠的に搬送するガイドレール22
と、XYテーブル11の前面にて停止せしめられるリー
ドフレーム21を担持する試料台23とが配置されてい
る。24はリードフレーム21上のペレットである。
A guide rail 22 for intermittently carrying the lead frame 21 is provided on the front side of the XY table 11.
And a sample table 23 carrying a lead frame 21 stopped on the front surface of the XY table 11. 24 is a pellet on the lead frame 21.

【0017】然るに、ボンディング装置10にあって
は、ボンディングアーム17のキャピラリ保持部17A
におけるキャピラリ19まわりの周方向4位置に、図1
(B)、(C)に示す如く、互いに隣接配置される4個
の圧電素子31〜34を設けている。各圧電素子31〜
34は、印加電圧の大きさに応じて厚み方向に伸縮し、
キャピラリ19に超音波振動を付与可能とする。この
時、キャピラリ保持部17Aの中央にはスリ割り17B
が形成され、締結ねじ35によりスリ割り17Bを締め
込むことにて圧電素子31〜34、及びキャピラリ19
をキャピラリ保持部17Aに固定することとしている。
However, in the bonding apparatus 10, the capillary holding portion 17A of the bonding arm 17 is used.
1 in four circumferential positions around the capillary 19 in FIG.
As shown in (B) and (C), four piezoelectric elements 31 to 34 arranged adjacent to each other are provided. Each piezoelectric element 31 to
34 expands and contracts in the thickness direction according to the magnitude of the applied voltage,
Ultrasonic vibration can be applied to the capillary 19. At this time, a slot 17B is provided in the center of the capillary holding portion 17A.
Is formed, and by tightening the slit 17B with the fastening screw 35, the piezoelectric elements 31 to 34 and the capillary 19 are formed.
Is fixed to the capillary holding portion 17A.

【0018】また、ボンディング装置10は、図2に示
す如く、電圧供給部36を有している。電圧供給部36
は、各圧電素子31〜34に互いに所定の位相ずれを有
する電圧(高周波交流電圧)を供給する。この時、電圧
供給部36は、環状をなして隣り合う各圧電素子31〜
34に、図2(A)に示す如く、順次90度の位相ずれ
を有する電圧を供給する。これにより、各圧電素子31
〜34は、順次キャピラリ19の直径方向に伸縮し、結
果としてキャピラリ19に円軌跡の超音波振動を付与す
るものとなる(図2(B))。尚、図示例の場合、各圧
電素子31〜34がキャピラリ19のまわりに90度ず
つの等配とされるので、各圧電素子31〜34に上述の
位相ずれを有しかつ同一電圧を印加するといった簡単な
制御により、キャピラリ19にて円軌跡の超音波振動を
得ることができる。
Further, the bonding apparatus 10 has a voltage supply section 36 as shown in FIG. Voltage supply unit 36
Supplies a voltage (high-frequency AC voltage) having a predetermined phase shift to each of the piezoelectric elements 31 to 34. At this time, the voltage supply unit 36 forms an annular shape between the adjacent piezoelectric elements 31 to 31.
Voltages having a phase shift of 90 degrees are sequentially supplied to 34, as shown in FIG. Thereby, each piezoelectric element 31
3 to 34 are sequentially expanded and contracted in the diameter direction of the capillary 19, and as a result, the ultrasonic vibration of a circular locus is applied to the capillary 19 (FIG. 2 (B)). In the illustrated example, since the piezoelectric elements 31 to 34 are equally distributed around the capillary 19 by 90 degrees, the piezoelectric elements 31 to 34 have the above-described phase shift and the same voltage is applied. With such a simple control, it is possible to obtain ultrasonic vibration of a circular locus in the capillary 19.

【0019】以下、ボンディング装置10によるボンデ
ィング動作について説明する。 (1) キャピラリ19に導電性ワイヤ20を通し、不図示
のトーチによりワイヤ20の先端部をボール状にする。
トーチはワイヤ20の先端部との間に高圧電流を放電
し、そのエネルギーによりワイヤ20を溶融させ、ボー
ル状にする。
The bonding operation of the bonding apparatus 10 will be described below. (1) The conductive wire 20 is passed through the capillary 19 and the tip of the wire 20 is formed into a ball shape by a torch (not shown).
The torch discharges a high-voltage current between the torch and the tip of the wire 20, and the energy thereof melts the wire 20 into a ball shape.

【0020】(2) XYテーブル11により、キャピラリ
19をペレット24の電極パッド上に位置付ける。そし
て、キャピラリ19をペレット24の電極パッドとリー
ドフレーム21のインナーリード間にて移動し、ワイヤ
ボンディングを行なう。
(2) The capillary 19 is positioned on the electrode pad of the pellet 24 by the XY table 11. Then, the capillary 19 is moved between the electrode pad of the pellet 24 and the inner lead of the lead frame 21 to perform wire bonding.

【0021】(3) 上記(2) において、ワイヤボンディン
グは、熱圧着と超音波振動の併用により行なう。即ち、
キャピラリ19は、枠体14及び支持体15の上下動と
一体になって下降し、電極パッドとインナーリードのボ
ンディング点のそれぞれにワイヤ20を押し付ける。そ
して、バネ18による押し付け力、試料台23に設けて
あるヒータの熱、キャピラリ19の超音波振動の併用に
より、ワイヤ20を各ボンディング点に圧着してボンデ
ィングを終了する。
(3) In the above (2), wire bonding is performed by using both thermocompression bonding and ultrasonic vibration. That is,
The capillary 19 moves down integrally with the vertical movement of the frame body 14 and the support body 15, and presses the wire 20 to each of the bonding points of the electrode pad and the inner lead. Then, the wire 20 is crimped to each bonding point by the combined use of the pressing force of the spring 18, the heat of the heater provided on the sample table 23, and the ultrasonic vibration of the capillary 19, and the bonding is completed.

【0022】以下、本実施例の作用について説明する。 電圧供給部36から各圧電素子31〜34に供給され
る電圧の位相調整により、キャピラリ19に円軌跡の振
動を与えることができ、キャピラリ19に通されたワイ
ヤ20のボール状先端部は電極パッド上で円運動を付与
せしめられる結果、ボンディング形状は図3(A)に示
す如くの円形状になる。
The operation of this embodiment will be described below. By adjusting the phase of the voltage supplied from the voltage supply unit 36 to each of the piezoelectric elements 31 to 34, a circular locus of vibration can be applied to the capillary 19, and the ball-shaped tip of the wire 20 passed through the capillary 19 is an electrode pad. As a result of the circular motion given above, the bonding shape becomes a circular shape as shown in FIG.

【0023】上記によりに、ボンディング形状が円
形状であって縦横比がほぼ同等になるため、電極パッド
に対するワイヤ20の接合面積が広く、ボンディング強
度を向上できる。特に、電極パッド自体の面積が狭いペ
レット24に対して行なう小ボールボンディングでは、
電極パッド面積を有効に利用して電極パッドに対するワ
イヤ20の接合面積を広くし、ボンディング強度を向上
できる。
As described above, since the bonding shape is circular and the aspect ratio is almost the same, the bonding area of the wire 20 to the electrode pad is wide and the bonding strength can be improved. In particular, in the small ball bonding performed on the pellet 24 having a small area of the electrode pad itself,
By effectively utilizing the electrode pad area, the bonding area of the wire 20 to the electrode pad can be widened and the bonding strength can be improved.

【0024】上記により、ボンディング形状が円形
状であって縦横比がほぼ同等になるため、電極パッドに
対するワイヤ20の接合面積を広くしながらも、ワイヤ
接合部の電極パッドからのはみ出しを防止できる。特
に、小ボールボンディングにおいて、電極パッド自体が
狭い上に、電極パッド間のピッチが狭い場合にも、電極
パッドからのワイヤ接合部のはみ出しを防止し、ショー
トの発生を回避できる。
As described above, since the bonding shape is circular and the aspect ratio is almost the same, it is possible to prevent the wire bonding portion from protruding from the electrode pad while increasing the bonding area of the wire 20 to the electrode pad. In particular, in the small ball bonding, even when the electrode pads themselves are narrow and the pitch between the electrode pads is narrow, it is possible to prevent the wire bonding portion from protruding from the electrode pads and avoid the occurrence of a short circuit.

【0025】尚、本実施例においては、インナーリード
のボンディング点にワイヤ20をボンディングする時点
においても、キャピラリ19には円軌跡の超音波振動が
付与されるようになっている。
In this embodiment, the ultrasonic vibration of a circular locus is applied to the capillary 19 even when the wire 20 is bonded to the bonding point of the inner lead.

【0026】[0026]

【発明の効果】以上のように本発明によれば、ワイヤ接
合部が電極パッドからはみ出すことなく、電極パッドに
対するワイヤの接合面積を広くしてボンディング強度を
向上することができる。
As described above, according to the present invention, the bonding area of the wire to the electrode pad can be increased and the bonding strength can be improved without the wire bonding portion protruding from the electrode pad.

【図面の簡単な説明】[Brief description of drawings]

【図1】図1は本発明の一実施例に係るボンディング装
置を示す模式図である。
FIG. 1 is a schematic view showing a bonding apparatus according to an embodiment of the present invention.

【図2】図2は各圧電素子への電圧供給調整方法とキャ
ピラリの振動状態を示す模式図である。
FIG. 2 is a schematic diagram showing a method of adjusting voltage supply to each piezoelectric element and a vibrating state of a capillary.

【図3】図3はボンディング形状を示す模式図である。FIG. 3 is a schematic diagram showing a bonding shape.

【符号の説明】[Explanation of symbols]

1 電極パッド 2 ワイヤ接合部 10 ボンディング装置 17 ボンディングアーム 17A キャピラリ保持部 19 キャピラリ 20 ワイヤ 31〜34 圧電素子 36 電圧供給部 DESCRIPTION OF SYMBOLS 1 Electrode pad 2 Wire joining part 10 Bonding device 17 Bonding arm 17A Capillary holding part 19 Capillary 20 Wire 31-34 Piezoelectric element 36 Voltage supply part

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 ボンディングアームのキャピラリ保持部
にキャピラリを保持し、このキャピラリに導電性ワイヤ
を通し、このキャピラリに超音波振動を付与しながら導
電性ワイヤをボンディング点にボンディングするワイヤ
ボンディング装置において、 ボンディングアームのキャピラリ保持部におけるキャピ
ラリまわりの周方向複数位置に互いに隣接配置される複
数個の圧電素子と、 各圧電素子に互いに所定の位相ずれを有する電圧を供給
する電圧供給部とを有することを特徴とするワイヤボン
ディング装置。
1. A wire bonding apparatus for holding a capillary in a capillary holding portion of a bonding arm, passing a conductive wire through the capillary, and bonding the conductive wire to a bonding point while applying ultrasonic vibration to the capillary. A plurality of piezoelectric elements arranged adjacent to each other at a plurality of circumferential positions around the capillaries in the capillary holding section of the bonding arm, and a voltage supply section for supplying a voltage having a predetermined phase shift to each piezoelectric element. Characteristic wire bonding equipment.
JP36095892A 1992-12-29 1992-12-29 Wire bonding equipment Expired - Fee Related JP3274731B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP36095892A JP3274731B2 (en) 1992-12-29 1992-12-29 Wire bonding equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36095892A JP3274731B2 (en) 1992-12-29 1992-12-29 Wire bonding equipment

Publications (2)

Publication Number Publication Date
JPH06204302A true JPH06204302A (en) 1994-07-22
JP3274731B2 JP3274731B2 (en) 2002-04-15

Family

ID=18471614

Family Applications (1)

Application Number Title Priority Date Filing Date
JP36095892A Expired - Fee Related JP3274731B2 (en) 1992-12-29 1992-12-29 Wire bonding equipment

Country Status (1)

Country Link
JP (1) JP3274731B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261122A (en) * 2001-02-28 2002-09-13 Shibuya Kogyo Co Ltd Bonding apparatus
US20120125977A1 (en) * 2009-08-12 2012-05-24 Kulicke And Soffa Industries, Inc. Ultrasonic transducers for wire bonding and methods of forming wire bonds using ultrasonic transducers
JP2012151183A (en) * 2011-01-17 2012-08-09 Advanced Systems Japan Inc Normal temperature low-frequency bonding device
WO2014021141A1 (en) * 2012-08-03 2014-02-06 株式会社カイジョー Bonding device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261122A (en) * 2001-02-28 2002-09-13 Shibuya Kogyo Co Ltd Bonding apparatus
US20120125977A1 (en) * 2009-08-12 2012-05-24 Kulicke And Soffa Industries, Inc. Ultrasonic transducers for wire bonding and methods of forming wire bonds using ultrasonic transducers
US8251275B2 (en) * 2009-08-12 2012-08-28 Kulicke And Soffa Industries, Inc. Ultrasonic transducers for wire bonding and methods of forming wire bonds using ultrasonic transducers
US8365977B2 (en) 2009-08-12 2013-02-05 Kulicke And Soffa Industries, Inc. Ultrasonic transducers for wire bonding and methods of forming wire bonds using ultrasonic transducers
JP2012151183A (en) * 2011-01-17 2012-08-09 Advanced Systems Japan Inc Normal temperature low-frequency bonding device
WO2014021141A1 (en) * 2012-08-03 2014-02-06 株式会社カイジョー Bonding device
KR20140084181A (en) 2012-08-03 2014-07-04 가부시끼가이샤가이죠 Bonding device
US9339888B2 (en) 2012-08-03 2016-05-17 Kaijo Corporation Bonding apparatus
TWI549206B (en) * 2012-08-03 2016-09-11 Kaijo Kk Jointing device

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