JP3274731B2 - Wire bonding equipment - Google Patents

Wire bonding equipment

Info

Publication number
JP3274731B2
JP3274731B2 JP36095892A JP36095892A JP3274731B2 JP 3274731 B2 JP3274731 B2 JP 3274731B2 JP 36095892 A JP36095892 A JP 36095892A JP 36095892 A JP36095892 A JP 36095892A JP 3274731 B2 JP3274731 B2 JP 3274731B2
Authority
JP
Japan
Prior art keywords
bonding
capillary
wire
electrode pad
shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP36095892A
Other languages
Japanese (ja)
Other versions
JPH06204302A (en
Inventor
雄之 新川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Priority to JP36095892A priority Critical patent/JP3274731B2/en
Publication of JPH06204302A publication Critical patent/JPH06204302A/en
Application granted granted Critical
Publication of JP3274731B2 publication Critical patent/JP3274731B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78308—Removable capillary
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/01005—Boron [B]
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    • H—ELECTRICITY
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    • H01L2924/01082—Lead [Pb]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【産業上の利用分野】本発明は、半導体ペレット上の電
極パッドやリードフレームのインナーリード等のボンデ
ィング点に導電性ワイヤをボンディングするワイヤボン
ディング装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding apparatus for bonding a conductive wire to a bonding point such as an electrode pad on a semiconductor pellet or an inner lead of a lead frame.

【０００２】[0002]

【従来の技術】従来、ワイヤボンディング装置として、
ボンディングアームのキャピラリ保持部にキャピラリを
保持し、このキャピラリに導電性ワイヤを通し、このキ
ャピラリに超音波振動を付与しながら導電性ワイヤをボ
ンディング点にボンディングするものがある。2. Description of the Related Art Conventionally, as a wire bonding apparatus,
There is a type in which a capillary is held in a capillary holding portion of a bonding arm, a conductive wire is passed through the capillary, and the conductive wire is bonded to a bonding point while applying ultrasonic vibration to the capillary.

【０００３】この時、従来技術は、ボンディングアーム
の長手方向の先端部にキャピラリ保持部を設け、ボンデ
ィングアームの長手方向の基端部に超音波振動子を設
け、この超音波振動子を発振させることにより、キャピ
ラリにボンディングアームの長手方向に沿う一方向の振
動を付与するものである。従って、従来技術では、キャ
ピラリに通されたワイヤのボール状先端部は電極パッド
上で一方向にのみ運動（直線運動）せしめられ、ボンデ
ィング形状は図３（Ｂ）に示す如くの細長いだ円形状と
なる。図３において、１は電極パッド、２はワイヤ接合
部である。At this time, in the prior art, a capillary holding portion is provided at a distal end portion of a bonding arm in a longitudinal direction, an ultrasonic vibrator is provided at a base end portion of a bonding arm in a longitudinal direction, and the ultrasonic vibrator is oscillated. In this way, vibration in one direction along the longitudinal direction of the bonding arm is applied to the capillary. Therefore, in the prior art, the ball-shaped tip of the wire passed through the capillary is moved (linearly moved) in only one direction on the electrode pad, and the bonding shape is an elongated elliptical shape as shown in FIG. Becomes In FIG. 3, 1 is an electrode pad, and 2 is a wire joint.

【０００４】[0004]

【発明が解決しようとする課題】然しながら、従来技術
には下記、の問題点がある。 ボンディング形状がだ円形状であって細長状となるた
め、その長径を直径とする円形状のボンディング形状に
比して、電極パッドに対するワイヤの接合面積が狭く、
ボンディング強度が弱い。特に、電極パッド自体の面積
が狭いペレットについて行なう小ボールボンディングで
は、電極パッド面積を有効に利用して電極パッドに対す
るワイヤの接合面積を広くし、ボンディング強度を向上
することが望まれるが、上記理由によりその実現が難し
かった。However, the prior art has the following problems. Since the bonding shape is an elliptical shape and an elongated shape, the bonding area of the wire to the electrode pad is smaller than that of a circular bonding shape having the major axis as the diameter,
Low bonding strength. In particular, in small ball bonding performed on a pellet having a small area of the electrode pad itself, it is desired to effectively use the area of the electrode pad to increase the bonding area of the wire to the electrode pad and improve the bonding strength. This made it difficult to realize.

【０００５】ボンディング形状がだ円形状であって細
長状となるため、電極パッドに対するワイヤの接合面積
を広くしようとすると、ワイヤ接合部が電極パッドから
はみ出し易い。特に、前述の小ボールボンディングで
は、電極パッド自体が狭い上に、電極パッド間のピッチ
も狭いため、電極パッドからはみ出したワイヤ接合部が
ショートの原因になるという危険性を有する。[0005] Since the bonding shape is an elliptical shape and an elongated shape, if the bonding area of the wire to the electrode pad is to be increased, the wire bonding portion is likely to protrude from the electrode pad. In particular, in the above-described small ball bonding, since the electrode pads themselves are narrow and the pitch between the electrode pads is also narrow, there is a risk that a wire bonding portion protruding from the electrode pads may cause a short circuit.

【０００６】本発明は、ワイヤ接合部が電極パッドから
はみ出すことなく、電極パッドに対するワイヤの接合面
積を広くしてボンディング強度を向上することを目的と
する。SUMMARY OF THE INVENTION It is an object of the present invention to increase the bonding area of a wire to an electrode pad without a wire bonding portion protruding from an electrode pad, thereby improving bonding strength.

【０００７】[0007]

【課題を解決するための手段】本発明は、ボンディング
アームのキャピラリ保持部にキャピラリを保持し、この
キャピラリに導電性ワイヤを通し、このキャピラリに超
音波振動を付与しながら導電性ワイヤをボンディング点
にボンディングするワイヤボンディング装置において、
ボンディングアームのキャピラリ保持部におけるキャピ
ラリまわりの周方向偶数位置に等配される偶数個の圧電
素子と、各圧電素子に独立して電圧を供給する電圧供給
部とを有するようにしたものである。According to the present invention, a capillary is held in a capillary holding portion of a bonding arm, a conductive wire is passed through the capillary, and the conductive wire is bonded to the capillary while applying ultrasonic vibration to the capillary. In a wire bonding apparatus for bonding to
An even number of piezoelectric elements are equally arranged at circumferentially even positions around a capillary in a capillary holding section of a bonding arm, and a voltage supply section for independently supplying a voltage to each piezoelectric element.

【０００８】[0008]

【０００９】[0009]

【００１０】[0010]

【００１１】[0011]

【実施例】図１は本発明の一実施例に係るボンディング
装置を示す模式図、図２は各圧電素子への電圧供給調整
方法とキャピラリの振動状態を示す模式図、図３はボン
ディング形状を示す模式図である。FIG. 1 is a schematic view showing a bonding apparatus according to an embodiment of the present invention, FIG. 2 is a schematic view showing a method of adjusting the voltage supply to each piezoelectric element and a vibration state of a capillary, and FIG. FIG.

【００１２】ボンディング装置１０は、図１に示す如
く、ＸＹテーブル１１上にボンディングヘッド１２を搭
載している。ボンディングヘッド１２には、支軸１３ま
わりに揺動可能に、枠体１４と支持体１５とが同軸支持
されている。The bonding apparatus 10 has a bonding head 12 mounted on an XY table 11 as shown in FIG. A frame 14 and a support 15 are coaxially supported by the bonding head 12 so as to be swingable around a support shaft 13.

【００１３】ボンディングヘッド１２には、モータ（不
図示）と、このモータによって揺動される回転板１６と
が設けられており、枠体１４には回転板１６のピン１６
Ａを挟むように２本のアーム１４Ａ、１４Ａが設けられ
ている。これにより、枠体１４は、回転板１６の揺動に
伴い、支軸１３まわりに上下に揺動する。The bonding head 12 is provided with a motor (not shown) and a rotating plate 16 which is swung by the motor.
Two arms 14A, 14A are provided so as to sandwich A. Accordingly, the frame 14 swings up and down around the support shaft 13 with the swing of the rotary plate 16.

【００１４】支持体１５にはボンディングアーム１７の
基端部が一体化されている。また、支持体１５はバネ１
８により枠体１４のストッパ１４Ｂに押し当てられ、枠
体１４の上下動と一体に上下（Ｚ方向）に揺動する。The base of the bonding arm 17 is integrated with the support 15. Further, the support 15 is a spring 1
8 presses against the stopper 14B of the frame 14, and swings up and down (Z direction) integrally with the up and down movement of the frame 14.

【００１５】ボンディングアーム１７の先端部のキャピ
ラリ保持部１７Ａにはキャピラリ１９が保持され、この
キャピラリ１９には金線、アルミニウム線等の導電性ワ
イヤ２０が通される。１９Ａはワイヤ挿通孔である。A capillary 19 is held in a capillary holding portion 17A at the tip of the bonding arm 17, and a conductive wire 20 such as a gold wire or an aluminum wire is passed through the capillary 19. 19A is a wire insertion hole.

【００１６】尚、ＸＹテーブル１１の前面側には、リー
ドフレーム２１を間欠的に搬送するガイドレール２２
と、ＸＹテーブル１１の前面にて停止せしめられるリー
ドフレーム２１を担持する試料台２３とが配置されてい
る。２４はリードフレーム２１上のペレットである。A guide rail 22 for intermittently transporting the lead frame 21 is provided on the front side of the XY table 11.
And a sample table 23 carrying a lead frame 21 stopped on the front surface of the XY table 11. Reference numeral 24 denotes a pellet on the lead frame 21.

【００１７】然るに、ボンディング装置１０にあって
は、ボンディングアーム１７のキャピラリ保持部１７Ａ
におけるキャピラリ１９まわりの周方向４位置に、図１
（Ｂ）、（Ｃ）に示す如く、互いに隣接配置される４個
の圧電素子３１〜３４を設けている。各圧電素子３１〜
３４は、印加電圧の大きさに応じて厚み方向に伸縮し、
キャピラリ１９に超音波振動を付与可能とする。この
時、キャピラリ保持部１７Ａの中央にはスリ割り１７Ｂ
が形成され、締結ねじ３５によりスリ割り１７Ｂを締め
込むことにて圧電素子３１〜３４、及びキャピラリ１９
をキャピラリ保持部１７Ａに固定することとしている。However, in the bonding apparatus 10, the capillary holding portion 17A of the bonding arm 17 is provided.
At four positions in the circumferential direction around the capillary 19 in FIG.
As shown in (B) and (C), four piezoelectric elements 31 to 34 arranged adjacent to each other are provided. Each piezoelectric element 31-
34 expands and contracts in the thickness direction according to the magnitude of the applied voltage,
Ultrasonic vibration can be applied to the capillary 19. At this time, a slot 17B is provided at the center of the capillary holding portion 17A.
Are formed, and the slits 17B are tightened with the fastening screws 35, whereby the piezoelectric elements 31 to 34 and the capillary 19 are formed.
Is fixed to the capillary holding portion 17A.

【００１８】また、ボンディング装置１０は、図２に示
す如く、電圧供給部３６を有している。電圧供給部３６
は、各圧電素子３１〜３４に互いに所定の位相ずれを有
する電圧（高周波交流電圧）を供給する。この時、電圧
供給部３６は、環状をなして隣り合う各圧電素子３１〜
３４に、図２（Ａ）に示す如く、順次９０度の位相ずれ
を有する電圧を供給する。これにより、各圧電素子３１
〜３４は、順次キャピラリ１９の直径方向に伸縮し、結
果としてキャピラリ１９に円軌跡の超音波振動を付与す
るものとなる（図２（Ｂ））。尚、図示例の場合、各圧
電素子３１〜３４がキャピラリ１９のまわりに９０度ず
つの等配とされるので、各圧電素子３１〜３４に上述の
位相ずれを有しかつ同一電圧を印加するといった簡単な
制御により、キャピラリ１９にて円軌跡の超音波振動を
得ることができる。The bonding apparatus 10 has a voltage supply section 36 as shown in FIG. Voltage supply unit 36
Supplies a voltage (high-frequency AC voltage) having a predetermined phase shift to each of the piezoelectric elements 31 to 34. At this time, the voltage supply unit 36 includes the piezoelectric elements 31 to 31 adjacent to each other in an annular shape.
As shown in FIG. 2A, voltages having a phase shift of 90 degrees are sequentially supplied to. Thereby, each piezoelectric element 31
34 sequentially expands and contracts in the diameter direction of the capillary 19, and as a result, imparts an ultrasonic vibration of a circular locus to the capillary 19 (FIG. 2B). In the case of the illustrated example, since the piezoelectric elements 31 to 34 are arranged at equal intervals of 90 degrees around the capillary 19, the same voltage is applied to the piezoelectric elements 31 to 34 with the above-described phase shift. With such a simple control, it is possible to obtain ultrasonic vibration of a circular locus in the capillary 19.

【００１９】以下、ボンディング装置１０によるボンデ
ィング動作について説明する。 (1) キャピラリ１９に導電性ワイヤ２０を通し、不図示
のトーチによりワイヤ２０の先端部をボール状にする。
トーチはワイヤ２０の先端部との間に高圧電流を放電
し、そのエネルギーによりワイヤ２０を溶融させ、ボー
ル状にする。Hereinafter, the bonding operation by the bonding apparatus 10 will be described. (1) The conductive wire 20 is passed through the capillary 19, and the tip of the wire 20 is formed into a ball shape by a torch (not shown).
The torch discharges a high-voltage current between the torch and the tip of the wire 20, and the energy melts the wire 20 to form a ball.

【００２０】(2) ＸＹテーブル１１により、キャピラリ
１９をペレット２４の電極パッド上に位置付ける。そし
て、キャピラリ１９をペレット２４の電極パッドとリー
ドフレーム２１のインナーリード間にて移動し、ワイヤ
ボンディングを行なう。(2) The capillary 19 is positioned on the electrode pad of the pellet 24 by the XY table 11. Then, the capillary 19 is moved between the electrode pad of the pellet 24 and the inner lead of the lead frame 21 to perform wire bonding.

【００２１】(3) 上記(2) において、ワイヤボンディン
グは、熱圧着と超音波振動の併用により行なう。即ち、
キャピラリ１９は、枠体１４及び支持体１５の上下動と
一体になって下降し、電極パッドとインナーリードのボ
ンディング点のそれぞれにワイヤ２０を押し付ける。そ
して、バネ１８による押し付け力、試料台２３に設けて
あるヒータの熱、キャピラリ１９の超音波振動の併用に
より、ワイヤ２０を各ボンディング点に圧着してボンデ
ィングを終了する。(3) In the above (2), wire bonding is performed by using both thermocompression bonding and ultrasonic vibration. That is,
The capillary 19 descends integrally with the vertical movement of the frame 14 and the support 15, and presses the wire 20 to each of the bonding points between the electrode pad and the inner lead. Then, by using the pressing force of the spring 18, the heat of the heater provided on the sample stage 23, and the ultrasonic vibration of the capillary 19, the wire 20 is pressed to each bonding point, and the bonding is completed.

【００２２】以下、本実施例の作用について説明する。 電圧供給部３６から各圧電素子３１〜３４に供給され
る電圧の位相調整により、キャピラリ１９に円軌跡の振
動を与えることができ、キャピラリ１９に通されたワイ
ヤ２０のボール状先端部は電極パッド上で円運動を付与
せしめられる結果、ボンディング形状は図３（Ａ）に示
す如くの円形状になる。The operation of this embodiment will be described below. By adjusting the phase of the voltage supplied to each of the piezoelectric elements 31 to 34 from the voltage supply unit 36, a vibration of a circular locus can be given to the capillary 19, and the ball-shaped tip of the wire 20 passed through the capillary 19 becomes an electrode pad. As a result of the above-described circular motion, the bonding shape becomes a circular shape as shown in FIG.

【００２３】上記によりに、ボンディング形状が円
形状であって縦横比がほぼ同等になるため、電極パッド
に対するワイヤ２０の接合面積が広く、ボンディング強
度を向上できる。特に、電極パッド自体の面積が狭いペ
レット２４に対して行なう小ボールボンディングでは、
電極パッド面積を有効に利用して電極パッドに対するワ
イヤ２０の接合面積を広くし、ボンディング強度を向上
できる。As described above, since the bonding shape is circular and the aspect ratio is almost equal, the bonding area of the wire 20 to the electrode pad is wide, and the bonding strength can be improved. In particular, in the small ball bonding performed on the pellet 24 having a small area of the electrode pad itself,
The bonding area of the wire 20 to the electrode pad can be increased by effectively utilizing the electrode pad area, and the bonding strength can be improved.

【００２４】上記により、ボンディング形状が円形
状であって縦横比がほぼ同等になるため、電極パッドに
対するワイヤ２０の接合面積を広くしながらも、ワイヤ
接合部の電極パッドからのはみ出しを防止できる。特
に、小ボールボンディングにおいて、電極パッド自体が
狭い上に、電極パッド間のピッチが狭い場合にも、電極
パッドからのワイヤ接合部のはみ出しを防止し、ショー
トの発生を回避できる。As described above, since the bonding shape is circular and the aspect ratio is substantially equal, it is possible to prevent the wire bonding portion from protruding from the electrode pad while increasing the bonding area of the wire 20 to the electrode pad. In particular, in the small ball bonding, even when the electrode pads themselves are narrow and the pitch between the electrode pads is narrow, it is possible to prevent the wire bonding portion from protruding from the electrode pads and to prevent occurrence of a short circuit.

【００２５】尚、本実施例においては、インナーリード
のボンディング点にワイヤ２０をボンディングする時点
においても、キャピラリ１９には円軌跡の超音波振動が
付与されるようになっている。In this embodiment, even when the wire 20 is bonded to the bonding point of the inner lead, ultrasonic vibration of a circular locus is applied to the capillary 19.

【００２６】[0026]

【発明の効果】以上のように本発明によれば、ワイヤ接
合部が電極パッドからはみ出すことなく、電極パッドに
対するワイヤの接合面積を広くしてボンディング強度を
向上することができる。As described above, according to the present invention, it is possible to increase the bonding area of the wire to the electrode pad and improve the bonding strength without the wire bonding portion protruding from the electrode pad.

【図面の簡単な説明】[Brief description of the drawings]

【図１】図１は本発明の一実施例に係るボンディング装
置を示す模式図である。FIG. 1 is a schematic view showing a bonding apparatus according to one embodiment of the present invention.

【図２】図２は各圧電素子への電圧供給調整方法とキャ
ピラリの振動状態を示す模式図である。FIG. 2 is a schematic diagram showing a method of adjusting voltage supply to each piezoelectric element and a state of vibration of a capillary.

【図３】図３はボンディング形状を示す模式図である。FIG. 3 is a schematic view showing a bonding shape.

【符号の説明】[Explanation of symbols]

１ 電極パッド ２ ワイヤ接合部 １０ ボンディング装置 １７ ボンディングアーム １７Ａ キャピラリ保持部 １９ キャピラリ ２０ ワイヤ ３１〜３４ 圧電素子 ３６ 電圧供給部 DESCRIPTION OF SYMBOLS 1 Electrode pad 2 Wire bonding part 10 Bonding apparatus 17 Bonding arm 17A Capillary holding part 19 Capillary 20 Wire 31-34 Piezoelectric element 36 Voltage supply part

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 ボンディングアームのキャピラリ保持部
にキャピラリを保持し、このキャピラリに導電性ワイヤ
を通し、このキャピラリに超音波振動を付与しながら導
電性ワイヤをボンディング点にボンディングするワイヤ
ボンディング装置において、 ボンディングアームのキャピラリ保持部におけるキャピ
ラリまわりの周方向偶数位置に等配される偶数個の圧電
素子と、 各圧電素子に独立して電圧を供給する電圧供給部とを有
することを特徴とするワイヤボンディング装置。1. A wire bonding apparatus for holding a capillary in a capillary holding portion of a bonding arm, passing a conductive wire through the capillary, and bonding the conductive wire to a bonding point while applying ultrasonic vibration to the capillary. A wire bonding method comprising: an even number of piezoelectric elements equally arranged at circumferentially even positions around a capillary in a capillary holding section of a bonding arm; and a voltage supply section for independently supplying a voltage to each piezoelectric element. apparatus.
JP36095892A 1992-12-29 1992-12-29 Wire bonding equipment Expired - Fee Related JP3274731B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP36095892A JP3274731B2 (en) 1992-12-29 1992-12-29 Wire bonding equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36095892A JP3274731B2 (en) 1992-12-29 1992-12-29 Wire bonding equipment

Publications (2)

Publication Number Publication Date
JPH06204302A JPH06204302A (en) 1994-07-22
JP3274731B2 true JP3274731B2 (en) 2002-04-15

Family

ID=18471614

Family Applications (1)

Application Number Title Priority Date Filing Date
JP36095892A Expired - Fee Related JP3274731B2 (en) 1992-12-29 1992-12-29 Wire bonding equipment

Country Status (1)

Country Link
JP (1) JP3274731B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104350587A (en) * 2012-08-03 2015-02-11 株式会社华祥 Bonding device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261122A (en) * 2001-02-28 2002-09-13 Shibuya Kogyo Co Ltd Bonding apparatus
JP6180736B2 (en) 2009-08-12 2017-08-23 クリック アンド ソッファ インダストリーズ、インク． Ultrasonic transducer for wire bonding and method of forming wire bond using ultrasonic transducer
JP5861133B2 (en) * 2011-01-17 2016-02-16 株式会社アドバンストシステムズジャパン Room temperature low frequency bonding equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104350587A (en) * 2012-08-03 2015-02-11 株式会社华祥 Bonding device
CN104350587B (en) * 2012-08-03 2017-05-10 株式会社华祥 Bonding device

Also Published As

Publication number Publication date
JPH06204302A (en) 1994-07-22

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