JP3708796B2 - Thick film resistor - Google Patents
Thick film resistor Download PDFInfo
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- JP3708796B2 JP3708796B2 JP2000167911A JP2000167911A JP3708796B2 JP 3708796 B2 JP3708796 B2 JP 3708796B2 JP 2000167911 A JP2000167911 A JP 2000167911A JP 2000167911 A JP2000167911 A JP 2000167911A JP 3708796 B2 JP3708796 B2 JP 3708796B2
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- JP
- Japan
- Prior art keywords
- thick film
- electrode
- film resistor
- resistance
- paste
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Description
【0001】
【発明の属する技術分野】
本発明は、絶縁基板の表面に抵抗ペースト及び電極ペーストを印刷し焼成する厚膜技術によって抵抗素子並びにその電極を形成した厚膜抵抗器に関する。
【0002】
【従来の技術】
従来の厚膜抵抗器は、セラミック等から成る絶縁基板の表面に酸化ルテニウム等から成る抵抗素子と銀パラジウム合金等から成る電極を具備し、前記抵抗素子の両端と電極の一部を重合させることによって相互に連結し電気的導通が確保されていた。
【0003】
【発明が解決しようとする課題】
この様な厚膜抵抗器は、従来より前記抵抗ペースト及び電極ペーストを高温で焼成する際に生じる材料相互の拡散が原因で抵抗器の定数のばらつきや温度係数が大きくなるという問題を抱えていた。しかも、抵抗値のばらつきや温度係数大という傾向は抵抗素子が小型になるほど顕著となることから高集積化に要求される小型化を妨げる要因となっていた。又、構造上、前記抵抗素子の両端と電極の一部が重合するということが前提となっていた為に、両者が形成される以前に抵抗値を測定することが出来ず、後のトリミング工程が不可欠となって工程を簡素化することが難しいという欠点もあった。
【0004】
本発明は、上記実情に鑑みて成されたものであって、抵抗素子と電極の素材間の拡散を抑え得る構造をもった、抵抗値のばらつきが少なく温度係数の小さい厚膜抵抗器の提供を目的とする。
【0005】
【課題を解決するための手段】
上記課題を解決するために成された本発明による厚膜抵抗器は、絶縁基板の表面の中央部に抵抗膜を設けると共に、当該絶縁基板の左右両端部に電極を設け、前記抵抗膜と電極とを双方の端面同士の接合のみを以て連結し電気的導通を確保して成ることを特徴とする。
【0006】
尚、抵抗膜と電極の端面とは双方が配列されている方向に面した面であって相互に向き合った面である。この面は必ずしも直立した面であるとは限らず、抵抗ペーストや電極ペーストの印刷状態によっては曲面を構成することもあるが、例え抵抗膜と電極とで部分的な複層構造を構成したとしても厚膜抵抗器の厚みを増加させる性質の接触のないものを指すこととする。
【0007】
【発明の実施の形態】
以下、本発明による厚膜抵抗器の実施の形態を図面に基づき説明する。
図1に示す例は、絶縁基板1の表面の中央部に抵抗膜2を設けると共に、当該絶縁基板1の左右両端部に端子電極3を設け、前記抵抗膜2と端子電極3とを双方の端面同士の接合のみを以て連結し、更に、絶縁基板1の端面導通を確保する端面電極4と、前記抵抗膜2を保護する保護膜5を形成したものである。
【0008】
上記厚膜抵抗器の製造工程としては、図4に示すものが挙げられる。この例では厚膜抵抗器が複数ピース縦横に並ぶ態様と成るように縦横に走る溝6によって区画されたアルミナ純度96%の絶縁基板1を用い、銀又は銀パラジウム合金の電極ペーストを前記絶縁基板1の表面に印刷し150℃下で乾燥後850℃で焼成することで端子電極3を形成する。次に酸化ルテニウムベースの抵抗ペーストを前記端子電極3の端面に接する様に印刷し150℃下で乾燥させ850℃で焼成することにより抵抗膜2を形成する。
【0009】
上記抵抗膜2上に下層コート7となる硝子ペーストを印刷し、150℃下で乾燥させ600℃で焼成した後にレーザートリミングを行い。次いで上層コート8となる硝子ペーストを印刷し同じく150℃下で乾燥させ600℃で焼成して保護膜5を形成する。尚、これまでの工程のうち端子電極3の形成と抵抗膜2の形成はどちらを先に行っても良く、又、前記電極ペーストの印刷と抵抗ペーストの印刷を終えた後に両者の焼成を同時に行っても良い。
【0010】
以上の工程を以て厚膜抵抗器の主要部が構成される。これらの厚膜抵抗器を単位ピース毎に分割する訳であるが、分割に際して端子電極3に所定の処理を施す。即ち、厚膜抵抗器が複数ピース横並びとなった短冊状と成るように上記工程を終えた基板9を分割し、分割辺に沿った端面及び前記端子電極3の露出部表面に端面電極4を前記電極ペーストを150℃下で乾燥させ600℃で焼成することにより形成する。そして、当該短冊状の基板10を単位ピース毎に分割し、最後に端子電極3の露出面に対してニッケル/錫ハンダのメッキを施して厚膜抵抗器が完成する。尚、接合面積を調整することによる抵抗値の調整や抵抗膜2と端子電極3との接合補強を目的として図2の如く導体膜11を被着する場合もある。
【0011】
上記の如く製造された厚膜抵抗器の特性を表1に基づいて考察すると、種々の抵抗帯域に推奨されるA,B,C,Dの抵抗ペーストの何れを使用した場合においても極めて低い温度特性が得られることが観察できる。尚、この表で示した0μmから90μmの重なり寸法は、端子電極3と抵抗膜2の実用範囲内の膜厚によっては、例え抵抗膜2と端子電極3とで部分的な複層構造を構成したとしても厚膜抵抗器の厚みを増加させない構成が可能と思われる範囲を選択したものであり、5μm未満の数字は切り捨ててある。例えば、抵抗膜2の膜厚が約10μmであれば重なり寸法が約10μmという具合に、重なり寸法/抵抗膜厚が100パーセント程度以下であることが望ましい。
【0012】
【表1】
【0013】
【発明の効果】
以上の如く本発明による厚膜抵抗器は、抵抗ペースト及び電極ペーストを高温で焼成する際に生じる材料相互の拡散を小さく抑え得る構造を持ち、高温焼成も可能となるので端子電極と絶縁基板との間で十分な接着力も確保できる。又、前記抵抗素子の両端と端子電極の一部が完全に重合しない為に、薄型の厚膜抵抗器を製造できる他、両者が形成される以前に抵抗値を測定することが可能となるので、製造する抵抗器の仕様によってはトリミング工程を省略し製造工程を簡素化することもできる。而して、抵抗値のばらつきが少なく、抵抗値の温度係数が小さい小型高精度の厚膜抵抗器を比較的安価に提供できることとなる。
【図面の簡単な説明】
【図1】本発明による厚膜抵抗器の一例を示す断面図である。
【図2】本発明による厚膜抵抗器の一例を示す断面図である。
【図3】従来の厚膜抵抗器の一例を示す断面図である。
【図4】本発明による厚膜抵抗器の製造方法の一例を示す工程図である。
【符号の説明】
1 絶縁基板
2 抵抗膜[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a resistive element and a thick film resistor in which an electrode thereof is formed by a thick film technique in which a resistance paste and an electrode paste are printed and fired on the surface of an insulating substrate.
[0002]
[Prior art]
A conventional thick film resistor comprises a resistance element made of ruthenium oxide or the like and an electrode made of silver palladium alloy on the surface of an insulating substrate made of ceramic or the like, and polymerizes both ends of the resistance element and a part of the electrode. By connecting with each other, electrical continuity was ensured.
[0003]
[Problems to be solved by the invention]
Conventionally, such a thick film resistor has had a problem that a variation in a constant of the resistor and a temperature coefficient become large due to mutual diffusion caused when the resistor paste and the electrode paste are fired at a high temperature. . In addition, the tendency of variation in resistance value and large temperature coefficient becomes more conspicuous as the resistance element becomes smaller, and this has been a factor that hinders downsizing required for higher integration. In addition, because the structure is based on the premise that both ends of the resistance element and a part of the electrode are superposed, the resistance value cannot be measured before both are formed, and the subsequent trimming process However, there is a drawback that it is difficult to simplify the process.
[0004]
The present invention has been made in view of the above circumstances, and provides a thick film resistor having a structure in which diffusion between a resistance element and an electrode material can be suppressed, and having a small variation in resistance value and a small temperature coefficient. With the goal.
[0005]
[Means for Solving the Problems]
In order to solve the above problems, a thick film resistor according to the present invention is provided with a resistance film at the center of the surface of an insulating substrate and electrodes at both right and left ends of the insulating substrate. Are connected only by joining the two end faces to ensure electrical continuity.
[0006]
Note that the resistance film and the end face of the electrode are faces facing each other in the direction in which both are arranged and facing each other. This surface is not necessarily an upright surface, and it may form a curved surface depending on the printing state of the resistance paste or electrode paste. For example, it is assumed that a partial multilayer structure is formed by the resistance film and the electrode. Also refers to those without contact with the property of increasing the thickness of the thick film resistor.
[0007]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of a thick film resistor according to the present invention will be described below with reference to the drawings.
In the example shown in FIG. 1, a
[0008]
As a manufacturing process of the thick film resistor, the one shown in FIG. In this example, an
[0009]
A glass paste to be the
[0010]
The main part of the thick film resistor is constituted by the above steps. These thick film resistors are divided into unit pieces, and a predetermined process is performed on the
[0011]
Considering the characteristics of the thick film resistor manufactured as described above based on Table 1, even when any of the resistance pastes of A, B, C, and D recommended for various resistance bands is used, the temperature is extremely low. It can be observed that characteristics are obtained. Note that the overlap dimension of 0 μm to 90 μm shown in this table may constitute a partial multilayer structure with the
[0012]
[Table 1]
[0013]
【The invention's effect】
As described above, the thick film resistor according to the present invention has a structure that can suppress the mutual diffusion of the material that occurs when the resistor paste and the electrode paste are fired at a high temperature, and can be fired at a high temperature. A sufficient adhesive force can be secured between the two. In addition, since both ends of the resistance element and part of the terminal electrode are not completely polymerized, a thin thick film resistor can be manufactured, and the resistance value can be measured before both are formed. Depending on the specifications of the resistor to be manufactured, the trimming process can be omitted and the manufacturing process can be simplified. Thus, a small and highly accurate thick film resistor with little variation in resistance value and a small temperature coefficient of resistance value can be provided at a relatively low cost.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an example of a thick film resistor according to the present invention.
FIG. 2 is a cross-sectional view showing an example of a thick film resistor according to the present invention.
FIG. 3 is a cross-sectional view showing an example of a conventional thick film resistor.
FIG. 4 is a process diagram showing an example of a method of manufacturing a thick film resistor according to the present invention.
[Explanation of symbols]
1 Insulating
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2000167911A JP3708796B2 (en) | 2000-06-05 | 2000-06-05 | Thick film resistor |
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JP2000167911A JP3708796B2 (en) | 2000-06-05 | 2000-06-05 | Thick film resistor |
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JP2001351809A JP2001351809A (en) | 2001-12-21 |
JP3708796B2 true JP3708796B2 (en) | 2005-10-19 |
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JP2000167911A Expired - Fee Related JP3708796B2 (en) | 2000-06-05 | 2000-06-05 | Thick film resistor |
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JP4661351B2 (en) * | 2005-05-19 | 2011-03-30 | 凸版印刷株式会社 | Passive element built-in wiring board and manufacturing method thereof |
JP4729398B2 (en) * | 2005-12-22 | 2011-07-20 | 太陽社電気株式会社 | Chip resistor |
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2000
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