JP3691951B2 - Gallium nitride compound semiconductor light emitting device - Google Patents

Gallium nitride compound semiconductor light emitting device Download PDF

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Publication number
JP3691951B2
JP3691951B2 JP605398A JP605398A JP3691951B2 JP 3691951 B2 JP3691951 B2 JP 3691951B2 JP 605398 A JP605398 A JP 605398A JP 605398 A JP605398 A JP 605398A JP 3691951 B2 JP3691951 B2 JP 3691951B2
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junction
type gan
gan layer
gallium nitride
compound semiconductor
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JPH11204832A (en
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治彦 岡崎
千里 古川
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Toshiba Corp
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Toshiba Corp
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    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body

Description

【０００１】
【発明の属する技術分野】
本発明は、半導体基板表面より光を取出す窒化ガリウム系化合物半導体発光素子に係り、特に素子から発光した光を蛍光体に照射して所望とする波長の発光を得る構成に関する。
【０００２】
【従来の技術】
近年、紫外光領域から青色、緑色領域に至る発光ダイオード（ＬＥＤ）の材料として、Ａｌｘ、Ｇａｙ、Ｉｎ１−ｘ−ｙＮ（０≦ｘ、ｙ≦１、ｘ＋ｙ≦ｌ）を用いた窒化ガリウム系化合物半導体が注目されている。このような材料の化合物半導体により、これまで困難であった発光強度の高い紫外光、青色、緑色等の発光が可能となって来ている。このような窒化ガリウム系化合物半導体は、一般に絶縁性基板であるサファイア基板上に成長形成される。
【０００３】
このため、ＧａＡｓ系の発光素子のように基板側に電極を設けることはできず、結晶成長基板側にアノ一ド、カソード電極の両方を形成することが必要である。そこで、カソード電極は、ｐ型層をエッチング除去してｎ型層を出して電極を形成する。アノ一ド電極はｐ型層の表面に形成する必要があるが、ｐ型層は導電率が低いため電極直下しか発光しない。そのため、発光領域全面に発光波長に対して透明な電極を形成しないと外部量子効率が低下することになる。
【０００４】
従来の窒化ガリウム系化合物半導体発光素子（以降、単に半導体発光素子と称することもある）の構造例を図１１に示す。サファイア基板１にＧａＮバッファ層（図示せず）及びｎ型ＧａＮ層２とｐ型ＧａＮ層３が結晶成長されて、ｐ型ＧａＮ層３の一部がエッチング除去されてｎ型ＧａＮ層２が露出されている。ｐ型ＧａΝ層３上にｐ側透明電極６、ｐ側ボンディング電極５が形成され、ｎ型ＧａＮ層２上にｎ側電極４が形成されている。
【０００５】
図１２に示すように、上記のような構造の半導体発光素子１０はリードフレーム１２上に銀ペースト等の導電性接着材料１１でマウントされ、樹脂モールド８が施される構成が一般的である。また、蛍光体を発光させるには、一般に樹脂モールド８中に蛍光体９を混入させる。ｐ側のボンディング電極５から流された電流は、導電性の良い透明電極６で広げられ、ｐ型ＧａＮ層３からｎ型ＧａＮ層２に電流が注入され、その時、ｐ型ＧａＮ層３とｎ型ＧａＮ層２の間に形成されるｐｎ接合より発光し、その光は透明電極６を通してチップ外に取り出される。更に図１３に示すような樹脂モールド８を介して外部に発光する。この際、樹脂モールド８中に蛍光体９があればｐｎ接合より発光した光によって、蛍光体も発光し、蛍光体の発色の種類を選択することにより、所望の色の発光を得ることができる。
【０００６】
【発明が解決しようとする課題】
上記のような従来の窒化ガリウム系化合物半導体発光素子においては、ｐｎ接合で発光した光はｐ型ＧａＮ層３で吸収されてしまい、表面の透明電極６まで届かず、外部に取り出せないという深刻な問題があった。
【０００７】
また、ｐ型ＧａＮ層３を薄くした場合、この層３で吸収されなかった分の光が透明電極６を通して取り出されるが、導電性が高く、半導体層に対してオーミックが取れ、しかも発光波長での吸収が少ないという電極材料は必ずしも容易に実現できないという問題があった。その上、発光波長が短波長化するにつれて、発光波長での吸収力が少ない材料は更に実現し難いという問題があった。特に、ｐｎ接合より出た光で蛍光体９を発光（特に赤色）させるためには、蛍光体９の発光変換効率の高い３００ｎｍ程度の短波長の発光を前記ｐｎ接合から取り出す必要があるが、この波長領域において吸収が少ないという材料の実現は非常に難しいという問題があった。
【０００８】
又、樹脂モールド８中に蛍光体９を含有させると、ｐｎ接合で発光した光の多くがすぐに蛍光体９によって変換される訳ではなく、樹脂モールド８部分を光が通過していくうちに蛍光体９で光変換されるため、光が樹脂モールド８中を伝播する際の減衰によって前記蛍光体９により効率的に変換できないとい問題と、短波長光（紫外光）により樹脂モールド８の劣化が引き起こされる等の問題もあった。更に、半導体素子を樹脂モールドしないと蛍光体９によって変換された光パワーの測定ができないため、ウエハ状態でのチップ選別が難しく、量産性に欠けるという問題もあった。
【０００９】
本発明は、上述の如き従来の課題を解決するためになされたもので、その目的は、実現しがたい材料の透明電極を用いなくとも、発生した短波長光（紫外光）の光を効率よく蛍光体で可視光などに変換して外部に効率よく取り出すことができると共に、赤、緑、青の３原色を発光することができる窒化ガリウム系化合物半導体発光素子を提供することである。
【００１０】
【課題を解決するための手段】
上記目的を達成するために、第１の発明の特徴は、ｐｎ接合を有する窒化ガリウム系化合物半導体において、前記ｐｎ接合の一部が除去されるように前記半導体表面から内部に向かって形成された断面が凹部状のｐｎ接合除去部を設けたことにある。
【００１１】
この第１の発明によれば、前記ｐｎ接合は、ｐ型のＧａＮ層とｎ型のＧａＮ層の境界部に形成され、表面のｐ型のＧａＮ層をエッチングしてｎ型のＧａＮ層を露出するように凹部状のｐｎ接合除去部を形成すると、ｐｎ接合除去部の側壁には前記ｐｎ接合の端面が露出する。ｐ型のＧａＮ層とｎ型のＧａＮ層に電圧を印加すると、前記ｐｎ接合部で紫外線が発光し、この紫外線が前記ｐｎ接合の端面から前記ｐｎ接合除去部を通して外部に照射する。ｐｎ接合除去部の内部及び周辺に蛍光体を充填又は塗布しておけば、前記紫外線は直ちに前記蛍光体により可視光に変換されて外部に照射される。
【００１２】
第２の発明の特徴は、前記ｐｎ接合除去部は、細長い溝状を有し、前記半導体表面に適当な間隔を空けて複数本設けられることにある。
【００１３】
この第２の発明によれば、前記複数本のｐｎ接合除去部から紫外線が外部に照射される。
【００１４】
第３の発明の特徴は、前記ｐｎ接合除去部は、開口部が円形又は多角形状の穴で、前記半導体表面に適当な間隔を空けて複数個設けられることにある。
【００１５】
この第３の発明によれば、例えば前記ｐｎ接合除去部は円柱形の穴などになるが、この穴の内壁面にｐｎ接合の端部が露出し、この端部から紫外線が外部に照射される。
【００１６】
第４の発明の特徴は、前記ｐｎ接合除去部の内部又は周辺部に蛍光体層を充填又は形成したことにある。
【００１７】
この第４の発明によれば、前記ｐｎ接合除去部の内壁面に露出しているｐｎ接合部から外部に照射された紫外線は前記蛍光体層により直ちに可視光線に変換されて外部に照射される。
【００１８】
第５の発明の特徴は、前記半導体表面に、前記ｐｎ接合除去部の開口部の少なくとも一部も含めて覆う蛍光体層を形成することにある。
【００１９】
この第５の発明によれば、前記ｐｎ接合除去部の内壁面に露出しているｐｎ接合部から外部に照射された紫外線はこのｐｎ接合除去部の開口部を塞ぐ前記蛍光体層により直ちに可視光線に変換されて外部に照射される。
【００２０】
第６の発明の特徴は、前記蛍光体層の一部分に異なる色を発色する蛍光体を含む領域が存在することにある。
【００２１】
この第６の発明によれば、前記ｐｎ接合部の端面から外部に照射された紫外線は前記蛍光体層により可視光に変換されるが、蛍光体層の種類によって異なった色の光が発光する。
【００２２】
第７の発明の特徴は、ｐ型のＧａＮ層とその下部にあるｎ型のＧａＮ層により形成されたｐｎ接合を有する窒化ガリウム系化合物半導体において、前記半導体表面の中央部にｎ側電極を設けるために前記ｐ型のＧａＮ層をエッチングして形成したｎ型のＧａＮ層の露出穴と、前記ｐｎ接合の一部が除去されるように前記半導体表面から内部に向かって形成された断面が凹部状の細長いｐｎ接合除去部とを設け、複数本の前記ｐｎ接合除去部を前記露出穴を中心として前記半導体表面の外周部へ向かって放射状に配置することにある。
【００２３】
第８の発明の特徴は、ｐ型のＧａＮ層とその下部にあるｎ型のＧａＮ層により形成されたｐｎ接合を有する窒化ガリウム系化合物半導体発光素子において、前記半導体表面の中央部にｎ側電極を設けるために前記ｐ型のＧａＮ層をエッチングして形成したｎ型のＧａＮ層の露出穴と、前記ｐｎ接合の一部が除去されるように前記半導体表面から内部に向かって形成された断面が凹部状で細長いｐｎ接合除去部とを設け、少なくとも１本以上の前記ｐｎ接合除去部を前記露出穴を中心とした同心円状に前記半導体表面に配置することにある。
【００２４】
この第８の発明によれば、通常、半導体表面は前記ｐｎ接合除去部などを除いて、透明電極で覆われるが、この透明電極を通して半導体表面電流が集中して流れやすい前記ｎ型のＧａＮ層の露出穴近くの透明電極領域のｐｎ接合部が前記ｐｎ接合除去部により同心円状に一部除去されているため、電流が半導体表面の周辺部分にも流れ、面全体で均一に発光する。
【００２５】
第９の発明の特徴は、ｐ型のＧａＮ層とその下部にあるｎ型のＧａＮ層により形成されたｐｎ接合を有する窒化ガリウム系化合物半導体において、ｐ型のＧａＮ層を複数の領域に分割し、各分割領域の半導体表面に、前記ｐｎ接合の一部が除去されるように前記半導体表面から内部に向かって形成された断面が凹部状の複数のｐｎ接合除去部を設け、且つ、前記各分割領域のｐｎ接合除去部に各分割領域毎に異なる色を発色する蛍光体層を充填することにある。
【００２６】
この第９の発明によれば、前記各分割領域のｐｎ接合除去部に充填されている蛍光体層の発色の種類が異なるため、それぞれの分割領域は異なる色の可視光を照射する。
【００２７】
第１０の発明の特徴は、前記ｐ型のＧａＮ層を３つの領域に分割し、且つ各分割領域のｐｎ接合除去部に、赤、青、緑の異なる色を発色する蛍光体層を充填して、前記各分割領域毎に異なる色の発光を得ることにある。
【００２８】
この第１０の発明によれば、３つの分割領域はそれぞれ、赤、青、緑の３原色の可視光を照射できるため、これら３原色のレベルを調整して混合することにより各種の色の可視光が得られる。
【００２９】
【発明の実施の形態】
以下、本発明の実施の形態を図面に基づいて説明する。図１は、本発明の窒化ガリウム系化合物半導体発光素子の第１の実施の形態の構成例を示した斜視図である。サファイア基板１上にＧａＮバッファ層（図示せず）、ｎ型ＧａＮ層２、ｐ型ＧａＮ層３を順次結晶成長させる。次にｐ型ＧａＮ層３をＰＥＰ法によりパタ−ニングし、ＲＩＥ法等によりエッチングしてｎ型ＧａＮ層２を露出させる。その後、ＰＥＰ法を用いてパタ−ニングし、ｎ側電極４としてＴｉ／Ａｕ等をｎ型ＧａＮ層２上に蒸着して、リフトオフにより形成する。透明電極６としては、ＰＥＰ法によりパタ−ニング後、真空蒸着法により厚さ１０ｎｍのＮｉ層をｐ型ＧａＮ層３上に形成する。
【００３０】
更に、ストライプ形成のためにＰＥＰ法によりパターニング後、１０μｍ幅のレジストをマスクとしてＮｉをＨＣｌ等でウエットエッチングした後、ＲＩＥ法等によりストライプ状にｐ型ＧａＮ層３をエッチング除去して、ｎ型ＧａＮ層２を露出させることにより、ｐｎ接合の一部を除去したｐｎ接合除去部１００を形成する。更に、熱ＣＶＤ法によりＳｉＯ2 膜を形成した後、ＰＥＰ法によってＮｉ薄膜と接続されたｐ側のボンディング電極５を形成する。尚、ｐｎ接合除去部１００の間にあるＧａＮ層はメサ型をしている。
【００３１】
なお、このＳｉＯ2 膜は図１には明記されていないが、ｐｎ接合除去部１００のメサ端面、ｐｎ接合の露出面、透明電極６の表面に亙って形成されており、ｎ側電極４部分と透明電極６とｐ側のボンディング電極５の重なり部分を除く、ｐ側電極下にも形成されている。半導体層表面が酸化物等もなく、十分に清浄な状態であれば不要な工程となる場合もあるが、透明電極６及びｎ側電極４と半導体層間の密着性、オーミック性向上のために４５０℃で、２０秒のフラッシュアニールを行うことにより、電極形成する。
【００３２】
次に本実施の形態の動作について説明する。カソードのｐ側ボンディング電極５とアノードのｎ側電極４との間に電圧が印加されると、ｐ側ボンディング電極５から流入する電流は、導電性の良い透明電極６で広げられ、ｐ型ＧａＮ層３からｎ型ＧａＮ層２に注入されて、これらｐ、ｎ型ＧａＮ層３、２の間のｐｎ接合部で発光し、発光した紫外線はストライプ状に形成されたｐｎ接合除去部１００の側壁に露出しているｐｎ接合部の端面及びｐ型ＧａＮ層３、透明電極６を通して外部に照射される。
【００３３】
ここで、ストライプ状に形成されたｐｎ接合除去部１００の壁面や底面に蛍光体が塗布又は充填されておれば、前記ｐｎ接合除去部１００のｐｎ接合端面から発光した紫外線はこの蛍光体により可視光に変換されて外部に照射される。この時、前記蛍光体の発色が赤であれば赤色が、前記蛍光体の発色が青であれば青色が、前記蛍光体の発色が緑であれば緑色が外部に照射されることになる。
【００３４】
このようにして得られた本例の電流電圧特性（Ｉ−Ｖ特性）及び電流一光出力（Ｐｏ）特性を図２に示す。この図２において、電流値２０ｍＡの時に、電圧４．３Ｖ、光出力５８μＷ、発光波長は３６０ｎｍが得られることが分かる。
【００３５】
本実施の形態によれば、半導体表面に複数本のｐｎ接合除去部１００を形成することにより、ｐ型ＧａＮ層３とｎ型ＧａＮ層２より形成されるｐｎ接合の一部を除去して、このｐｎ接合で発光した紫外線をｐｎ接合除去部１００の側壁に露出するｐｎ接合端面から外部に取り出すことにより、ｐ型ＧａＮ層３や透明電極６により前記紫外線が減衰しても、前記ｐｎ接合端面から十分なレベルの紫外線を外部に取り出すことができる。従って、透明電極６の材料としては通常のものが使用でき、容易に上記効果を得ることができる。また、発光した紫外線は蛍光体の発光変換効率が高い３６０ｎｍ程度の短波長であることと、ｐｎ接合端面に近接して塗布又は充填されている蛍光体により直ちに可視光に変換するため、可視光への変換効率が極めて高く、十分なレベルの可視光を効率よく得ることができると共に、前記ＰＮ接合端面から光を外部に導き出す構造のため、発光源の微細化を容易に行うことができる。更に、上記のようにｐｎ接合部から短波長の紫外線を効率よく取り出すことができるため、この紫外線を赤色の蛍光体で赤色に変換することができ、実用レベルの赤色の発光を得ることができる。又、従来のように樹脂モールド中に蛍光体があるわけではなく、ウエハ状態で、蛍光体が塗布されているため、ウエハ状態でも前記蛍光体で変換された光の強度を測定することができ、ウエハ状態でのチップ選別を容易に行うことができ、半導体発光素子の量産性及び歩留まりの向上を図ることができる。
【００３６】
尚、ｐｎ接合除去部１００の半導体表面に占める面積の割合は、大きいとｐｎ接合の面積が少なくなって、紫外線の発光量が少なくなってしまい、逆に前記ｐｎ接合除去部１００の面積が小さいと、ｐｎ接合部から外部に取り出す紫外線の量が少なくなるため、前記ｐｎ接合除去部１００の半導体表面に占める割合は、適切な範囲がある。
【００３７】
図３は本発明の窒化ガリウム系化合物半導体発光素子の第２の実施の形態の構成例を示した斜視図である。本例は、ｐ型ＧａＮ層３の上に形成されている透明電極６及びｐｎ接合除去部１００の上に蛍光体層７が形成されている以外は、図１に示した第１の実施の形態と同様の構造を有している。これにより、カソードのｐ側ボンディング電極５とアノードのｎ側電極４との間に電圧が印加されると、ｐ型ＧａＮ層３とｎ型ＧａＮ層２の間にあるｐｎ接合部で発光し、発光した紫外線はストライプ状に形成されたｐｎ接合除去部１００の側面に露出しているｐｎ接合端面及びｐ型ＧａＮ層３、透明電極６を通して外部に照射される。この時、前記紫外線は蛍光体層７を通過する際に、可視光線に変換され、この可視光線が外部に照射されることになる。
【００３８】
この場合も、蛍光体層７はストライプ状に形成されたｐｎ接合除去部１００及び透明電極６に近接して配置されているため、発光された紫外線は減衰することなく、蛍光体層７により効率的に可視光線に変換され、第１の実施の形態と同様の効果がある。特に、本例ではｐ型ＧａＮ層３、透明電極６を通して外部に照射され紫外線も蛍光体層７により可視光に変換でき、その分効率がよくなっている。
【００３９】
図４は窒化ガリウム系化合物半導体発光素子の本発明の第３の実施の形態の構成例を示した斜視図である。本例は、半導体発光素子全体に蛍光体含有有機シラン溶液を塗布して形成した蛍光体層７で半導体発光素子全体を囲んだ構成を有している他は、図３に示した第２の実施の形態と同様であり、同様の効果がある。
【００４０】
図５は本発明の窒化ガリウム系化合物半導体発光素子の第４の実施の形態の構成例を示した斜視図である。本例は、ｐ型ＧａＮ層３とｎ型ＧａＮ層２のｐｎ接合部の一部を除去するｐｎ接合除去部１００がストライプ状に形成されているが、本例はストライプ状に形成されたｐｎ接合除去部１００の間にあるｐ型ＧａＮ層３とｎ型ＧａＮ層２の部分が逆メサ型になっていている点が異なり、他の構成は図１に示した第１の実施の形態と同様であり、同様の効果がある。
【００４１】
特に、ストライプ状に形成されたｐｎ接合除去部１００の間にあるｐ型ＧａＮ層３とｎ型ＧａＮ層２の部分が逆メサ型であるため、透明電極６と半導体層の接触面積を大きくし、メサエッチングされた穴の底部分２１に蛍光体を含む有機シラン溶液、或いは蛍光体そのものを詰め込むことで、ｐｎ接合部の端面から外部に発光された紫外線を前記蛍光体で効率的に赤色系の可視光に変換することができる。
【００４２】
図６は本発明の窒化ガリウム系化合物半導体発光素子の第５の実施の形態の構成例を示した平面図である。本例は、ｐ型ＧａＮ層３とｎ型ＧａＮ層２の間にあるｐｎ接合除去部１００の形状を細長い溝型とし、このような形状のｐｎ接合除去部１００がチップ表面の中心から周辺部に向かって複数本直線上に伸びている。他の構成は図１に示した第１の実施の形態と同様であるため、ｐｎ接合除去部１００の壁面に露出するｐｎ接合部の端面から紫外線が外部に照射され、第１の実施の形態と同様の効果がある。尚、ｐｎ接合除去部１００内及びその周辺部に蛍光体層を設ければ、前記紫外線を効率的に可視光に変換することができる。
【００４３】
図７は本発明の窒化ガリウム系化合物半導体発光素子の第６の実施の形態の構成例を示した平面図である。本例は、ｐ型ＧａＮ層３のほぼ中央部を円形にエッチングしてｎ型ＧａＮ層２を円形に露出させ、このｎ型ＧａＮ層２の表面の中央に、円形のｎ側電極４が形成されている。また、ｐ型ＧａＮ層３とｎ型ＧａＮ層２の間にあるｐｎ接合の一部を除去するｐｎ接合除去部１００の形状は細長い溝型であるが、前記円形のｎ型ＧａＮ層２の露出穴の外周部を形成するｐ型ＧａＮ層３の縁から外側に向かって放射状にｐｎ接合除去部１００が複数本配置されている。しかも、これらｐｎ接合除去部１００の一方の端部は前記露出穴に連通している。他の構成は図１に示した第１の実施の形態と同様であるため、ｐｎ接合除去部１００の壁面に露出するｐｎ接合部の端面から紫外線が外部に照射され、第１の実施の形態と同様の効果がある。尚、ｐｎ接合除去部１００の中などに蛍光体層を充填すれば、この蛍光体層により前記紫外線を効率的に可視光に変換することができる。
【００４４】
図８は本発明の窒化ガリウム系化合物半導体発光素子の第８の実施の形態の構成例を示した平面図である。本例は、ｐ型ＧａＮ層３のほぼ中央部を円形にエッチングしてｎ型ＧａＮ層２を円形に露出させ、このｎ型ＧａＮ層２の表面の中央に、円形のｎ側電極４が形成され、ｐ型ＧａＮ層３の隅にＰ側ボンディング電極５が形成されている。このＰ側ボンディング電極５部分を除き、ｎ側電極４を中心として、ほぼ同心円状に複数の円形のｐｎ接合除去部１００が形成されている。これらｐｎ接合除去部１００とＰ側ボンディング電極５を除いて、ｐ型ＧａＮ層３のほぼ全面を透明電極６が覆っており、この透明電極６とＰ側のボンディング電極５は互いに接続されている。
【００４５】
本実施の形態は上記のような構造にすることにより、電流が集中して流れやすいｎ側電極４近くの透明電極６の領域のｐｎ接合部が前記ｐｎ接合除去部１００により同心円状に一部除去されているため、電流がＰ型ＧａＮ層３の周辺部分にも流れるようになり、面全体より均一な発光を得ることができる。他の構成は図１に示した第１の実施の形態と同様であるため、ｐｎ接合除去部１００の壁面に露出するｐｎ接合部の端面から紫外線が外部に照射され、第１の実施の形態と同様の効果がある。尚、ｐｎ接合除去部１００の中などに蛍光体層を充填すれば、この蛍光体層により前記紫外線を効率的に可視光に変換することができる。
【００４６】
図９は本発明の窒化ガリウム系化合物半導体発光素子の第８の実施の形態の構成例を示した斜視図である。本例は、ｐ型ＧａＮ層３とｎ型ＧａＮ層２のｐｎ接合部の一部をＲＩＥ法によりエッチングして除去するｐｎ接合除去部１００が円柱型をしており、この円柱型のｐｎ接合層除去部分１００が複数個適当な間隔を離して配置されている。
【００４７】
他の構成は図１に示した第１の実施の形態と同様で、円柱型のｐｎ接合除去部１００の壁面に露出するｐｎ接合部端面から紫外線が外部に取り出され、同様の効果がある。特に、円柱型のｐｎ接合除去部１００の大きさとその数を適切にすることにより、ｐ型ＧａＮ層３と透明電極６との接触面積を増やすことができるため、素子のＩ−Ｖ特性を改善することができ、より安定な発光を行うことができる。
【００４８】
図１０は本発明の窒化ガリウム系化合物半導体発光素子の第９の実施の形態の構成例を示した斜視図である。本例は、円柱型のｐｎ接合除去部１００の開口部を塞ぐように蛍光体層７を設けてあるところが、図９に示した第８の実施の形態と異なるだけで、他の構成は第８の実施の形態と同様である。
【００４９】
これにより、円柱型のｐｎ接合除去部１００から取り出される紫外線は蛍光体層７により直ちに可視光に効率よく変換されて、この可視光が外部に照射される。従って、蛍光体層７の種類を変えることにより、可視光の種類を例えば赤、青、緑と変えることができる。他の効果は第８の実施の形態と同様で、同様の効果がある。
【００５０】
図１１は本発明窒化ガリウム系化合物半導体発光素子の第１０の実施の形態の構成例を示した斜視図である。本例は、図１０に示した半導体発光素子が３個隣接して形成されている。これら３個の半導体発光素子のｐ型ＧａＮ層３から上の部分はそれぞれ他と区分されているが、ｎ型ＧａＮ層２、サファイア基板１は共通で、ｎ側電極４も共通である。これら３個の半導体発光素子の円柱型のｐｎ接合除去部の開口部には、これを塞ぐように３原色の赤、青、緑の蛍光体層１３、１４、１５が充填されている。このため、蛍光体層１３からは赤色が発光され、蛍光体層１４からは青色が発光され、蛍光体層１５からは緑色が発光される。
【００５１】
本実施の形態によれば、窒化ガリウム系化合物半導体発光素子のみでフルカラーの実現が可能となるばかりでなく、生産コストの低減、歩留まりの向上を図ることができると共に、発光源を微細化することができる。
【００５２】
【発明の効果】
以上詳細に説明したように、第１、第２、第３、第７の発明によれば、ｐｎ接合の一部を除去するｐｎ接合除去部を設けて、ｐｎ接合の端面を露出させ、このｐｎ接合の端面から紫外線を取り出すことにより、実現しがたい材料の透明電極を用いなくとも、発生した紫外光を効率よく外部に取り出すことができる。
【００５３】
第４、第５の発明によれば、前記ｐｎ接合の端面に近接して、蛍光体を配置することにより、前記ｐｎ接合から取り出された紫外線を前記蛍光体により直ちに可視光に変換するため、十分なレベルの赤などの可視光を効率よく得ることができる。
【００５４】
第８の発明によれば、半導体表面電流が集中するｎ型のＧａＮ層の露出穴の付近に同心円状のｐｎ接合除去部が設けてあるため、半導体表面電流が表面全体に流れて、半導体表面より均一な発光を得ることができる。
【００５５】
第６の発明によれば、前記ｐｎ接合の端面に近接して、複数の発色の蛍光体を配置することにより、複数の色の可視光の照射を同時に得ることができる。
【００５６】
第９、１０の発明によれば、各分割領域のｐｎ接合除去部に異なる発色の蛍光体層を充填したため、各分割領域毎で異なる色の可視光を得ることができる。特に前記分割領域を３分割とし、前記異なる発色の蛍光体層を赤、青、緑の３原色とすれば、窒化ガリウム系化合物半導体発光素子のみで、カラーのＬＥＤを容易に実現することができる。
【図面の簡単な説明】
【図１】本発明の窒化ガリウム系化合物半導体発光素子の第１の実施の形態の構成例を示した斜視図である。
【図２】図１に示した光半導体素子の電流電圧特性及び電流光出力特性を示した特性図である。
【図３】本発明の窒化ガリウム系化合物半導体発光素子の第２の実施の形態の構成例を示した斜視図である。
【図４】本発明の窒化ガリウム系化合物半導体発光素子の第３の実施の形態の構成例を示した斜視図である。
【図５】本発明の窒化ガリウム系化合物半導体発光素子の第４の実施の形態の構成例を示した斜視図である。
【図６】本発明の窒化ガリウム系化合物半導体発光素子の第５の実施の形態の構成例を示した平面図である。
【図７】本発明の窒化ガリウム系化合物半導体発光素子の第６の実施の形態の構成例を示した平面図である。
【図８】本発明の窒化ガリウム系化合物半導体発光素子の第７の実施の形態の構成例を示した平面図である。
【図９】本発明の窒化ガリウム系化合物半導体発光素子の第８の実施の形態の構成例を示した斜視図である。
【図１０】本発明の窒化ガリウム系化合物半導体発光素子の第９の実施の形態の構成例を示した斜視図である。
【図１１】本発明の窒化ガリウム系化合物半導体発光素子の第１０の実施の形態の構成例を示した斜視図である。
【図１２】従来の窒化ガリウム系化合物半導体発光素子の構成例を示した斜視図である。
【図１３】従来の窒化ガリウム系化合物半導体発光素子の他の構成例を示した斜視図である。
【符号の説明】
１ サファイア基板
２ ｎ型ＧａＮ層
３ ｐ型ＧａＮ層
４ ｎ側電極
５ ｐ側のボンディング電極
６ 透明電極
７、１３、１４、１５、１６ 蛍光体層
１００ ｐｎ接合除去部[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a gallium nitride-based compound semiconductor light-emitting device that extracts light from the surface of a semiconductor substrate, and more particularly, to a configuration that emits light having a desired wavelength by irradiating a phosphor with light emitted from the device.
[0002]
[Prior art]
In recent years, gallium nitride compounds using Alx, Gay, In1-xyN (0 ≦ x, y ≦ 1, x + y ≦ l) as materials for light emitting diodes (LEDs) ranging from the ultraviolet region to the blue and green regions Semiconductors are attracting attention. With compound semiconductors of such materials, it has become possible to emit ultraviolet light, blue light, green light, and the like with high light emission intensity, which has been difficult until now. Such a gallium nitride compound semiconductor is generally grown on a sapphire substrate, which is an insulating substrate.
[0003]
For this reason, an electrode cannot be provided on the substrate side like a GaAs-based light emitting element, and it is necessary to form both an anode and a cathode electrode on the crystal growth substrate side. Thus, the cathode electrode is formed by etching away the p-type layer to expose the n-type layer. The anodic electrode needs to be formed on the surface of the p-type layer, but the p-type layer emits light only directly under the electrode because of its low conductivity. For this reason, the external quantum efficiency decreases unless an electrode transparent to the emission wavelength is formed on the entire surface of the light emitting region.
[0004]
FIG. 11 shows a structural example of a conventional gallium nitride-based compound semiconductor light-emitting device (hereinafter sometimes simply referred to as a semiconductor light-emitting device). A GaN buffer layer (not shown), an n-type GaN layer 2 and a p-type GaN layer 3 are grown on the sapphire substrate 1, and a part of the p-type GaN layer 3 is etched away to expose the n-type GaN layer 2. Has been. A p-side transparent electrode 6 and a p-side bonding electrode 5 are formed on the p-type Ga layer 3, and an n-side electrode 4 is formed on the n-type GaN layer 2.
[0005]
As shown in FIG. 12, the semiconductor light emitting device 10 having the above structure is generally mounted on a lead frame 12 with a conductive adhesive material 11 such as silver paste, and a resin mold 8 is applied. Further, in order to cause the phosphor to emit light, the phosphor 9 is generally mixed in the resin mold 8. The current flowing from the p-side bonding electrode 5 is spread by the transparent electrode 6 having good conductivity, and the current is injected from the p-type GaN layer 3 to the n-type GaN layer 2. Light is emitted from a pn junction formed between the type GaN layers 2, and the light is extracted out of the chip through the transparent electrode 6. Further, light is emitted to the outside through the resin mold 8 as shown in FIG. At this time, if the phosphor 9 is present in the resin mold 8, the phosphor also emits light by the light emitted from the pn junction, and light emission of a desired color can be obtained by selecting the type of color of the phosphor. .
[0006]
[Problems to be solved by the invention]
In the conventional gallium nitride compound semiconductor light emitting device as described above, the light emitted from the pn junction is absorbed by the p-type GaN layer 3, does not reach the transparent electrode 6 on the surface, and cannot be taken out to the outside. There was a problem.
[0007]
In addition, when the p-type GaN layer 3 is thinned, light that is not absorbed by the layer 3 is extracted through the transparent electrode 6, but is highly conductive, ohmic to the semiconductor layer, and has a light emission wavelength. There is a problem that an electrode material having a small amount of absorption cannot be easily realized. In addition, as the emission wavelength becomes shorter, there is a problem that a material having a small absorption power at the emission wavelength is more difficult to realize. In particular, in order to cause the phosphor 9 to emit light (especially red) with the light emitted from the pn junction, it is necessary to extract light having a short wavelength of about 300 nm, which has high emission conversion efficiency of the phosphor 9, from the pn junction. There is a problem that it is very difficult to realize a material that absorbs little in this wavelength region.
[0008]
In addition, when the phosphor 9 is included in the resin mold 8, most of the light emitted from the pn junction is not immediately converted by the phosphor 9, but as the light passes through the resin mold 8 portion. Since the light is converted by the phosphor 9, there is a problem that light cannot be efficiently converted by the phosphor 9 due to attenuation when propagating through the resin mold 8, and deterioration of the resin mold 8 due to short wavelength light (ultraviolet light). There were also problems such as being caused. Further, since the optical power converted by the phosphor 9 cannot be measured unless the semiconductor element is resin-molded, there is a problem that chip selection in the wafer state is difficult and mass productivity is lacking.
[0009]
The present invention has been made to solve the above-described conventional problems, and its purpose is to efficiently use the generated short-wavelength light (ultraviolet light) without using a transparent electrode that is difficult to realize. It is an object to provide a gallium nitride-based compound semiconductor light-emitting element that can be converted into visible light or the like by a phosphor and can be efficiently extracted outside and can emit three primary colors of red, green, and blue.
[0010]
[Means for Solving the Problems]
In order to achieve the above object, the first invention is characterized in that, in a gallium nitride compound semiconductor having a pn junction, the semiconductor surface is formed from the semiconductor surface toward the inside so that a part of the pn junction is removed. This is because a pn junction removing portion having a concave section is provided.
[0011]
According to the first invention, the pn junction is formed at the boundary between the p-type GaN layer and the n-type GaN layer, and the n-type GaN layer is exposed by etching the p-type GaN layer on the surface. When the concave pn junction removal portion is formed as described above, the end surface of the pn junction is exposed on the side wall of the pn junction removal portion. When a voltage is applied to the p-type GaN layer and the n-type GaN layer, ultraviolet rays are emitted from the pn junction, and the ultraviolet rays are irradiated to the outside from the end face of the pn junction through the pn junction removal portion. If phosphors are filled or applied in and around the pn junction removing portion, the ultraviolet rays are immediately converted into visible light by the phosphors and irradiated to the outside.
[0012]
A feature of the second invention resides in that the pn junction removing portion has an elongated groove shape, and a plurality of the pn junction removing portions are provided at an appropriate interval on the semiconductor surface.
[0013]
According to the second aspect of the invention, ultraviolet rays are irradiated to the outside from the plurality of pn junction removal portions.
[0014]
A feature of the third invention resides in that a plurality of the pn junction removing portions are circular holes or polygonal holes, and a plurality of the pn junction removing portions are provided on the semiconductor surface with appropriate intervals.
[0015]
According to the third aspect of the invention, for example, the pn junction removing portion is a cylindrical hole or the like, but the end of the pn junction is exposed on the inner wall surface of the hole, and ultraviolet rays are irradiated from the end to the outside. The
[0016]
A feature of the fourth invention resides in that a phosphor layer is filled or formed in or around the pn junction removal portion.
[0017]
According to the fourth aspect of the invention, the ultraviolet light irradiated to the outside from the pn junction exposed on the inner wall surface of the pn junction removal portion is immediately converted into visible light by the phosphor layer and irradiated to the outside. .
[0018]
A feature of the fifth invention resides in that a phosphor layer covering at least a part of the opening of the pn junction removing portion is formed on the semiconductor surface.
[0019]
According to the fifth aspect of the invention, the ultraviolet rays irradiated to the outside from the pn junction exposed on the inner wall surface of the pn junction removal portion are immediately visible by the phosphor layer closing the opening of the pn junction removal portion. It is converted into a light beam and irradiated outside.
[0020]
A feature of the sixth invention resides in that a region containing a phosphor that emits a different color exists in a part of the phosphor layer.
[0021]
According to the sixth aspect of the invention, the ultraviolet light irradiated to the outside from the end face of the pn junction is converted into visible light by the phosphor layer, but light of different colors is emitted depending on the type of the phosphor layer. .
[0022]
According to a seventh aspect of the present invention, in a gallium nitride compound semiconductor having a pn junction formed by a p-type GaN layer and an n-type GaN layer below the p-type GaN layer, an n-side electrode is provided at the center of the semiconductor surface. Therefore, the exposed hole of the n-type GaN layer formed by etching the p-type GaN layer and the cross section formed from the semiconductor surface to the inside so as to remove a part of the pn junction are recessed. And a plurality of the pn junction removal portions are arranged radially from the exposed hole toward the outer peripheral portion of the semiconductor surface.
[0023]
According to an eighth aspect of the present invention, there is provided a gallium nitride-based compound semiconductor light emitting device having a pn junction formed by a p-type GaN layer and an n-type GaN layer below the p-type GaN layer. A cross section formed from the surface of the semiconductor toward the inside so as to remove an exposed hole of the n-type GaN layer formed by etching the p-type GaN layer to remove the pn junction. Is provided with a long and narrow pn junction removal portion, and at least one pn junction removal portion is disposed on the semiconductor surface concentrically around the exposed hole.
[0024]
According to the eighth aspect of the invention, the semiconductor surface is usually covered with a transparent electrode except for the pn junction removal portion, etc., but the n-type GaN layer in which the semiconductor surface current tends to concentrate and flow through the transparent electrode. Since the pn junction part of the transparent electrode region near the exposed hole is partially removed concentrically by the pn junction removal part, the current also flows to the peripheral part of the semiconductor surface, and the entire surface emits light uniformly.
[0025]
According to a ninth aspect of the present invention, in a gallium nitride compound semiconductor having a pn junction formed by a p-type GaN layer and an n-type GaN layer below the p-type GaN layer, the p-type GaN layer is divided into a plurality of regions. A plurality of pn junction removal portions each having a concave cross section formed from the semiconductor surface so as to remove a part of the pn junction are provided on the semiconductor surface of each divided region; and The purpose is to fill the pn junction removal portion of the divided region with a phosphor layer that develops a different color for each divided region.
[0026]
According to the ninth aspect of the invention, since the type of color development of the phosphor layers filled in the pn junction removal portion of each divided region is different, each divided region irradiates visible light of a different color.
[0027]
According to a tenth aspect of the invention, the p-type GaN layer is divided into three regions, and the pn junction removal portion of each divided region is filled with a phosphor layer that develops different colors of red, blue, and green. Thus, light emission of a different color is obtained for each of the divided regions.
[0028]
According to the tenth aspect of the invention, the three divided regions can radiate visible light of the three primary colors of red, blue, and green, respectively. By adjusting and mixing the levels of these three primary colors, various colors are visible. Light is obtained.
[0029]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a perspective view showing a configuration example of a first embodiment of a gallium nitride-based compound semiconductor light emitting device of the present invention. A GaN buffer layer (not shown), an n-type GaN layer 2 and a p-type GaN layer 3 are sequentially grown on the sapphire substrate 1. Next, the p-type GaN layer 3 is patterned by the PEP method and etched by the RIE method or the like to expose the n-type GaN layer 2. Thereafter, patterning is performed using the PEP method, and Ti / Au or the like is deposited on the n-type GaN layer 2 as the n-side electrode 4 and formed by lift-off. As the transparent electrode 6, after patterning by the PEP method, a Ni layer having a thickness of 10 nm is formed on the p-type GaN layer 3 by a vacuum deposition method.
[0030]
Further, after patterning by the PEP method for forming a stripe, Ni is wet-etched with HCl or the like using a 10 μm-wide resist as a mask, and then the p-type GaN layer 3 is etched and removed in a stripe shape by the RIE method or the like. By exposing the GaN layer 2, the pn junction removing portion 100 from which a part of the pn junction is removed is formed. Further, after the SiO2 film is formed by the thermal CVD method, the p-side bonding electrode 5 connected to the Ni thin film is formed by the PEP method. Note that the GaN layer located between the pn junction removal portions 100 has a mesa shape.
[0031]
Although this SiO2 film is not clearly shown in FIG. 1, it is formed over the mesa end surface of the pn junction removing portion 100, the exposed surface of the pn junction, and the surface of the transparent electrode 6, and the n-side electrode 4 portion. The transparent electrode 6 and the p-side bonding electrode 5 are also formed under the p-side electrode except for the overlapping portion. If the surface of the semiconductor layer is free of oxide or the like and is sufficiently clean, it may be an unnecessary process. However, in order to improve the adhesion and ohmic properties between the transparent electrode 6 and the n-side electrode 4 and the semiconductor layer, 450 An electrode is formed by performing flash annealing at 20 ° C. for 20 seconds.
[0032]
Next, the operation of the present embodiment will be described. When a voltage is applied between the cathode p-side bonding electrode 5 and the anode n-side electrode 4, the current flowing from the p-side bonding electrode 5 is spread by the transparent electrode 6 having good conductivity, and p-type GaN. It is injected from the layer 3 into the n-type GaN layer 2 and emits light at the pn junction between the p and n-type GaN layers 3 and 2, and the emitted ultraviolet light is a side wall of the pn junction removal unit 100 formed in a stripe shape. Irradiated to the outside through the end face of the pn junction exposed to p, the p-type GaN layer 3, and the transparent electrode 6.
[0033]
Here, if the phosphor is applied or filled on the wall surface or bottom surface of the pn junction removing unit 100 formed in a stripe shape, the ultraviolet light emitted from the pn junction end surface of the pn junction removing unit 100 is visible by this phosphor. It is converted into light and irradiated outside. At this time, if the color of the phosphor is red, red is emitted, blue if the color of the phosphor is blue, and green if the color of the phosphor is green.
[0034]
FIG. 2 shows the current-voltage characteristics (IV characteristics) and the current-light output (Po) characteristics of the present example thus obtained. In FIG. 2, it can be seen that when the current value is 20 mA, a voltage of 4.3 V, an optical output of 58 μW, and an emission wavelength of 360 nm are obtained.
[0035]
According to the present embodiment, by forming a plurality of pn junction removal portions 100 on the semiconductor surface, a part of the pn junction formed by the p-type GaN layer 3 and the n-type GaN layer 2 is removed, Even if the ultraviolet light is attenuated by the p-type GaN layer 3 or the transparent electrode 6 by taking out the ultraviolet light emitted from the pn junction to the outside from the pn junction end face exposed on the side wall of the pn junction removing portion 100, the pn junction end face A sufficient level of ultraviolet light can be extracted outside. Therefore, a normal material can be used as the material of the transparent electrode 6, and the above effect can be easily obtained. In addition, the emitted ultraviolet light has a short wavelength of about 360 nm, which is high in the light emission conversion efficiency of the phosphor, and is immediately converted into visible light by the phosphor coated or filled close to the pn junction end face. Conversion efficiency is extremely high, a sufficient level of visible light can be obtained efficiently, and the light emission source can be easily miniaturized because of the structure in which light is led out from the PN junction end face. Furthermore, since the short wavelength ultraviolet rays can be efficiently taken out from the pn junction as described above, the ultraviolet rays can be converted into red with a red phosphor, and red light of a practical level can be obtained. . In addition, the phosphor is not present in the resin mold as in the prior art, and since the phosphor is applied in the wafer state, the intensity of the light converted by the phosphor can be measured even in the wafer state. Further, it is possible to easily perform chip selection in the wafer state, and it is possible to improve the mass productivity and the yield of the semiconductor light emitting device.
[0036]
Note that if the ratio of the area of the pn junction removing portion 100 to the semiconductor surface is large, the area of the pn junction is reduced, and the amount of ultraviolet light emission is reduced. Conversely, the area of the pn junction removing portion 100 is small. Since the amount of ultraviolet rays extracted from the pn junction portion to the outside decreases, the ratio of the pn junction removal portion 100 to the semiconductor surface has an appropriate range.
[0037]
FIG. 3 is a perspective view showing a configuration example of the second embodiment of the gallium nitride compound semiconductor light emitting device of the present invention. This example is different from the first embodiment shown in FIG. 1 except that the transparent electrode 6 formed on the p-type GaN layer 3 and the phosphor layer 7 are formed on the pn junction removing portion 100. It has the same structure as the form. Thus, when a voltage is applied between the cathode p-side bonding electrode 5 and the anode n-side electrode 4, light is emitted at the pn junction between the p-type GaN layer 3 and the n-type GaN layer 2, The emitted ultraviolet light is irradiated to the outside through the pn junction end face exposed on the side surface of the pn junction removal portion 100 formed in a stripe shape, the p-type GaN layer 3, and the transparent electrode 6. At this time, the ultraviolet rays are converted into visible rays when passing through the phosphor layer 7, and the visible rays are irradiated to the outside.
[0038]
Also in this case, since the phosphor layer 7 is disposed in the vicinity of the pn junction removing portion 100 and the transparent electrode 6 formed in a stripe shape, the emitted ultraviolet rays are not attenuated, and the phosphor layer 7 is more efficient. It is converted into visible light and has the same effect as in the first embodiment. In particular, in this example, the ultraviolet rays can be converted to visible light by the phosphor layer 7 by being irradiated to the outside through the p-type GaN layer 3 and the transparent electrode 6, and the efficiency is improved accordingly.
[0039]
FIG. 4 is a perspective view showing a configuration example of the third embodiment of the present invention of a gallium nitride-based compound semiconductor light emitting device. This example has a configuration in which the entire semiconductor light emitting device is surrounded by a phosphor layer 7 formed by applying a phosphor-containing organosilane solution to the entire semiconductor light emitting device, except that the second embodiment shown in FIG. This is similar to the embodiment and has the same effect.
[0040]
FIG. 5 is a perspective view showing a configuration example of the fourth embodiment of the gallium nitride compound semiconductor light emitting device of the present invention. In this example, the pn junction removing portion 100 for removing a part of the pn junction between the p-type GaN layer 3 and the n-type GaN layer 2 is formed in a stripe shape. In this example, the pn junction formed in the stripe shape is used. The difference between the p-type GaN layer 3 and the n-type GaN layer 2 between the junction removal portions 100 is an inverted mesa type, and the other configuration is the same as that of the first embodiment shown in FIG. It is the same and has the same effect.
[0041]
In particular, since the portion of the p-type GaN layer 3 and the n-type GaN layer 2 between the pn junction removal portions 100 formed in a stripe shape is an inverted mesa type, the contact area between the transparent electrode 6 and the semiconductor layer is increased. The organic silane solution containing the phosphor or the phosphor itself is packed in the bottom portion 21 of the mesa-etched hole, so that the ultraviolet light emitted to the outside from the end face of the pn junction can be efficiently reddish with the phosphor. Can be converted into visible light.
[0042]
FIG. 6 is a plan view showing a configuration example of the fifth embodiment of the gallium nitride-based compound semiconductor light emitting device of the present invention. In this example, the shape of the pn junction removal portion 100 between the p-type GaN layer 3 and the n-type GaN layer 2 is an elongated groove shape, and the pn junction removal portion 100 having such a shape extends from the center of the chip surface to the peripheral portion. A plurality of straight lines are extended toward. Since the other configuration is the same as that of the first embodiment shown in FIG. 1, the ultraviolet light is irradiated to the outside from the end face of the pn junction exposed on the wall surface of the pn junction removing unit 100, and the first embodiment. Has the same effect. In addition, if the phosphor layer is provided in the pn junction removing part 100 and its peripheral part, the ultraviolet rays can be efficiently converted into visible light.
[0043]
FIG. 7 is a plan view showing a configuration example of the sixth embodiment of the gallium nitride-based compound semiconductor light emitting device of the present invention. In this example, the central portion of the p-type GaN layer 3 is etched in a circular shape to expose the n-type GaN layer 2 in a circular shape, and a circular n-side electrode 4 is formed at the center of the surface of the n-type GaN layer 2. Has been. Further, the shape of the pn junction removing portion 100 for removing a part of the pn junction between the p-type GaN layer 3 and the n-type GaN layer 2 is an elongated groove type, but the circular n-type GaN layer 2 is exposed. A plurality of pn junction removal portions 100 are arranged radially from the edge of the p-type GaN layer 3 forming the outer periphery of the hole toward the outside. In addition, one end of the pn junction removing portion 100 communicates with the exposed hole. Since the other configuration is the same as that of the first embodiment shown in FIG. 1, the ultraviolet light is irradiated to the outside from the end face of the pn junction exposed on the wall surface of the pn junction removing unit 100, and the first embodiment. Has the same effect. If the phosphor layer is filled in the pn junction removing unit 100 or the like, the phosphor layer can efficiently convert the ultraviolet light into visible light.
[0044]
FIG. 8 is a plan view showing a configuration example of the eighth embodiment of the gallium nitride-based compound semiconductor light emitting device of the present invention. In this example, the central portion of the p-type GaN layer 3 is etched in a circular shape to expose the n-type GaN layer 2 in a circular shape, and a circular n-side electrode 4 is formed at the center of the surface of the n-type GaN layer 2. A P-side bonding electrode 5 is formed at the corner of the p-type GaN layer 3. Except for the P-side bonding electrode 5 portion, a plurality of circular pn junction removal portions 100 are formed substantially concentrically around the n-side electrode 4. Except for the pn junction removing portion 100 and the P-side bonding electrode 5, the transparent electrode 6 covers almost the entire surface of the p-type GaN layer 3, and the transparent electrode 6 and the P-side bonding electrode 5 are connected to each other. .
[0045]
In this embodiment, the pn junction portion in the region of the transparent electrode 6 near the n-side electrode 4 where current tends to flow due to concentration is partially concentrically formed by the pn junction removal portion 100 by adopting the structure as described above. Since the current is removed, the current flows also to the peripheral portion of the P-type GaN layer 3, and uniform light emission can be obtained from the entire surface. Since the other configuration is the same as that of the first embodiment shown in FIG. 1, the ultraviolet light is irradiated to the outside from the end face of the pn junction exposed on the wall surface of the pn junction removing unit 100, and the first embodiment. Has the same effect. If the phosphor layer is filled in the pn junction removing unit 100 or the like, the phosphor layer can efficiently convert the ultraviolet light into visible light.
[0046]
FIG. 9 is a perspective view showing a configuration example of the eighth embodiment of the gallium nitride-based compound semiconductor light emitting device of the present invention. In this example, a pn junction removing portion 100 that removes a part of the pn junction between the p-type GaN layer 3 and the n-type GaN layer 2 by etching using the RIE method has a cylindrical shape. A plurality of layer removal portions 100 are arranged at an appropriate interval.
[0047]
The other configuration is the same as that of the first embodiment shown in FIG. 1, and ultraviolet rays are taken out from the end surface of the pn junction part exposed on the wall surface of the columnar pn junction removal unit 100, and the same effect is obtained. In particular, by making the size and number of columnar pn junction removal portions 100 appropriate, the contact area between the p-type GaN layer 3 and the transparent electrode 6 can be increased, so that the IV characteristics of the device are improved. And more stable light emission can be performed.
[0048]
FIG. 10 is a perspective view showing a configuration example of the ninth embodiment of the gallium nitride-based compound semiconductor light emitting device of the present invention. In this example, the phosphor layer 7 is provided so as to close the opening of the columnar pn junction removing unit 100. However, this embodiment is different from the eighth embodiment shown in FIG. This is the same as the eighth embodiment.
[0049]
Thereby, the ultraviolet rays extracted from the columnar pn junction removing unit 100 are immediately and efficiently converted into visible light by the phosphor layer 7, and the visible light is irradiated to the outside. Therefore, by changing the type of the phosphor layer 7, the type of visible light can be changed to, for example, red, blue, and green. Other effects are the same as in the eighth embodiment, and there are similar effects.
[0050]
FIG. 11 is a perspective view showing a configuration example of a tenth embodiment of a gallium nitride-based compound semiconductor light-emitting element according to the present invention. In this example, three semiconductor light emitting elements shown in FIG. 10 are formed adjacent to each other. The upper part of the three semiconductor light emitting elements from the p-type GaN layer 3 is divided from the others, but the n-type GaN layer 2 and the sapphire substrate 1 are common, and the n-side electrode 4 is also common. The openings of the cylindrical pn junction removal portions of these three semiconductor light emitting elements are filled with phosphor layers 13, 14, and 15 of three primary colors so as to close the openings. For this reason, red light is emitted from the phosphor layer 13, blue light is emitted from the phosphor layer 14, and green light is emitted from the phosphor layer 15.
[0051]
According to the present embodiment, it is possible not only to realize a full color with only a gallium nitride-based compound semiconductor light-emitting element, but also to reduce the production cost and improve the yield, and to miniaturize the light-emitting source. Can do.
[0052]
【The invention's effect】
As described in detail above, according to the first, second, third, and seventh inventions, the pn junction removing portion that removes a part of the pn junction is provided to expose the end face of the pn junction. By extracting ultraviolet light from the end face of the pn junction, the generated ultraviolet light can be efficiently extracted to the outside without using a transparent electrode made of a material that is difficult to realize.
[0053]
According to the fourth and fifth inventions, by arranging the phosphor in the vicinity of the end surface of the pn junction, the ultraviolet light extracted from the pn junction is immediately converted into visible light by the phosphor. A sufficient level of visible light such as red can be obtained efficiently.
[0054]
According to the eighth invention, since the concentric pn junction removing portion is provided in the vicinity of the exposed hole of the n-type GaN layer where the semiconductor surface current is concentrated, the semiconductor surface current flows over the entire surface, and the semiconductor surface More uniform light emission can be obtained.
[0055]
According to the sixth aspect, by arranging a plurality of colored phosphors in the vicinity of the end face of the pn junction, it is possible to simultaneously obtain a plurality of colors of visible light irradiation.
[0056]
According to the ninth and tenth aspects of the invention, the phosphor layers having different colors are filled in the pn junction removal portions of the respective divided regions, so that visible light having different colors can be obtained for the respective divided regions. In particular, if the divided region is divided into three and the phosphor layers of different colors are made three primary colors of red, blue, and green, a color LED can be easily realized with only a gallium nitride compound semiconductor light emitting element. .
[Brief description of the drawings]
FIG. 1 is a perspective view showing a configuration example of a first embodiment of a gallium nitride-based compound semiconductor light emitting device of the present invention.
2 is a characteristic diagram showing current-voltage characteristics and current-light output characteristics of the optical semiconductor device shown in FIG. 1; FIG.
FIG. 3 is a perspective view showing a configuration example of a second embodiment of a gallium nitride-based compound semiconductor light-emitting element according to the present invention.
FIG. 4 is a perspective view showing a configuration example of a third embodiment of a gallium nitride-based compound semiconductor light-emitting element according to the present invention.
FIG. 5 is a perspective view showing a configuration example of a fourth embodiment of a gallium nitride-based compound semiconductor light-emitting element according to the present invention.
FIG. 6 is a plan view showing a configuration example of a fifth embodiment of a gallium nitride-based compound semiconductor light-emitting element according to the present invention.
FIG. 7 is a plan view showing a configuration example of a sixth embodiment of a gallium nitride-based compound semiconductor light-emitting element according to the present invention.
FIG. 8 is a plan view showing a configuration example of a seventh embodiment of a gallium nitride-based compound semiconductor light emitting element of the present invention.
FIG. 9 is a perspective view showing a configuration example of an eighth embodiment of a gallium nitride-based compound semiconductor light-emitting element according to the present invention.
FIG. 10 is a perspective view showing a configuration example of a ninth embodiment of a gallium nitride-based compound semiconductor light-emitting element according to the present invention.
FIG. 11 is a perspective view showing a configuration example of a tenth embodiment of a gallium nitride-based compound semiconductor light-emitting element according to the present invention.
FIG. 12 is a perspective view showing a configuration example of a conventional gallium nitride compound semiconductor light emitting device.
FIG. 13 is a perspective view showing another configuration example of a conventional gallium nitride-based compound semiconductor light emitting device.
[Explanation of symbols]
1 Sapphire substrate
2 n-type GaN layer
3 p-type GaN layer
4 n-side electrode
5 p-side bonding electrode
6 Transparent electrodes
7, 13, 14, 15, 16 Phosphor layer
100 pn junction removal part

Claims (4)

ｐ型のＧａＮ層とその下部にあるｎ型のＧａＮ層により形成されたｐｎ接合を有する窒化ガリウム系化合物半導体発光素子において、
前記半導体表面の中央部にｎ側電極を設けるために前記ｐ型のＧａＮ層をエッチングして形成したｎ型のＧａＮ層の露出穴と、
前記ｐｎ接合の一部が除去されるように前記半導体表面から内部に向かって形成された断面が凹部状の細長いｐｎ接合除去部とを設け、
複数本の前記ｐｎ接合除去部を前記露出穴を中心として前記半導体表面の外周部へ向かって放射状に配置することを特徴とする窒化ガリウム系化合物半導体発光素子。In a gallium nitride-based compound semiconductor light emitting device having a pn junction formed by a p-type GaN layer and an n-type GaN layer below the p-type GaN layer,
An exposed hole in the n-type GaN layer formed by etching the p-type GaN layer to provide an n-side electrode in the center of the semiconductor surface;
An elongated pn junction removing portion having a recess formed in a cross section formed inward from the semiconductor surface so that a part of the pn junction is removed;
A gallium nitride-based compound semiconductor light emitting device, wherein a plurality of the pn junction removal portions are arranged radially toward the outer peripheral portion of the semiconductor surface with the exposed hole as a center. ｐ型のＧａＮ層とその下部にあるｎ型のＧａＮ層により形成されたｐｎ接合を有する窒化ガリウム系化合物半導体発光素子において、
前記半導体表面の中央部にｎ側電極を設けるために前記ｐ型のＧａＮ層をエッチングして形成したｎ型のＧａＮ層の露出穴と、
前記ｐｎ接合の一部が除去されるように前記半導体表面から内部に向かって形成された断面が凹部状で細長いｐｎ接合除去部とを設け、
少なくとも一本以上の前記ｐｎ接合除去部を前記露出穴を中心とした同心円状に前記半導体表面に配置することを特徴とする窒化ガリウム系化合物半導体発光素子。In a gallium nitride-based compound semiconductor light emitting device having a pn junction formed by a p-type GaN layer and an n-type GaN layer below the p-type GaN layer,
An exposed hole in the n-type GaN layer formed by etching the p-type GaN layer to provide an n-side electrode in the center of the semiconductor surface;
A pn junction removing portion having an elongated cross section formed in a concave shape from the semiconductor surface so as to remove a part of the pn junction;
A gallium nitride-based compound semiconductor light emitting element, wherein at least one or more pn junction removal portions are concentrically arranged on the semiconductor surface with the exposed hole as a center. ｐ型のＧａＮ層とその下部にあるｎ型のＧａＮ層により形成されたｐｎ接合を有する窒化ガリウム系化合物半導体発光素子において、
ｐ型のＧａＮ層を複数の領域に分割し、各分割領域の半導体表面に、前記ｐｎ接合の一部が除去されるように前記半導体表面から内部に向かって形成された断面が凹部状の複数のｐｎ接合除去部を設け、
且つ、前記各分割領域のｐｎ接合除去部に各分割領域毎に異なる色を発色する蛍光体層を充填することを特徴とする窒化ガリウム系化合物半導体発光素子。In a gallium nitride-based compound semiconductor light emitting device having a pn junction formed by a p-type GaN layer and an n-type GaN layer below the p-type GaN layer,
A p-type GaN layer is divided into a plurality of regions, and a plurality of concave portions are formed on the semiconductor surface of each divided region from the semiconductor surface toward the inside so that a part of the pn junction is removed. A pn junction removal portion of
A gallium nitride-based compound semiconductor light emitting device, wherein the pn junction removing portion of each divided region is filled with a phosphor layer that develops a different color for each divided region. 前記各分割領域のｐｎ接合除去部に、赤、青、緑の異なる色を発色する蛍光体層を充填して、前記各分割領域毎に異なる色の発光を得ることを特徴とする請求項３記載の窒化ガリウム系化合物半導体発光素子。Wherein the pn junction removing portions of the divided regions, red, blue, and filled with a phosphor layer for color green different colors, according to claim 3, characterized in that to obtain light emission of different colors wherein each divided region The gallium nitride-based compound semiconductor light-emitting device described.
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