JPH11261114A - Light-emitting diode - Google Patents
Light-emitting diodeInfo
- Publication number
- JPH11261114A JPH11261114A JP10377128A JP37712898A JPH11261114A JP H11261114 A JPH11261114 A JP H11261114A JP 10377128 A JP10377128 A JP 10377128A JP 37712898 A JP37712898 A JP 37712898A JP H11261114 A JPH11261114 A JP H11261114A
- Authority
- JP
- Japan
- Prior art keywords
- light
- emitting element
- light emitting
- emitting diode
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は発光素子を樹脂モー
ルドで包囲してなる発光ダイオード（以下ＬＥＤとい
う）に係り、特に一種類の発光素子で多種類の発光がで
き、さらに高輝度な波長変換発光ダイオードに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode (hereinafter referred to as "LED") in which a light emitting element is surrounded by a resin mold. It relates to a light emitting diode.
【０００２】[0002]
【従来の技術】一般に、ＬＥＤは図１に示すような構造
を有している。１は１ｍｍ角以下に切断された例えばＧ
ａＡｌＡｓ、ＧａＰ等よりなる発光素子、２はメタルス
テム、３はメタルポスト、４は発光素子を包囲する樹脂
モールドである。発光素子１の裏面電極はメタルステム
２に銀ペースト等で接着され電気的に接続されており、
発光素子１の表面電極は他端子であるメタルポスト３か
ら伸ばされた金線によりその表面でワイヤボンドされ、
さらに発光素子１は透明な樹脂モールド４でモールドさ
れている。2. Description of the Related Art Generally, an LED has a structure as shown in FIG. 1 is cut into 1 mm square or less, for example, G
A light emitting element made of aAlAs, GaP, or the like, 2 is a metal stem, 3 is a metal post, and 4 is a resin mold surrounding the light emitting element. The back electrode of the light emitting element 1 is electrically connected to the metal stem 2 by bonding with a silver paste or the like.
The surface electrode of the light emitting element 1 is wire-bonded on its surface by a gold wire extended from a metal post 3 as another terminal,
Further, the light emitting element 1 is molded with a transparent resin mold 4.
【０００３】通常、樹脂モールド４は、発光素子の発光
を空気中に効率よく放出する目的で、屈折率が高く、か
つ透明度の高い樹脂が選択されるが、他に、その発光素
子の発光色を変換する目的で、あるいは色を補正する目
的で、その樹脂モールド４の中に着色剤として無機顔
料、または有機顔料が混入される場合がある。Usually, a resin having a high refractive index and a high transparency is selected for the resin mold 4 in order to efficiently emit light emitted from the light emitting element into the air. In some cases, an inorganic pigment or an organic pigment is mixed as a colorant into the resin mold 4 for the purpose of converting the color or correcting the color.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、従来、
樹脂モールドに着色剤を添加して波長を変換するという
技術はほとんど実用化されておらず、着色剤により色補
正する技術がわずかに使われているのみである。なぜな
ら、樹脂モールドに、波長を変換できるほどの非発光物
質である着色剤を添加すると、ＬＥＤそのもの自体の輝
度が大きく低下してしまうからである。However, conventionally,
The technique of adding a colorant to a resin mold to convert the wavelength has hardly been put to practical use, and the technique of correcting the color with a colorant is only slightly used. This is because the addition of a coloring agent, which is a non-light-emitting substance that can convert the wavelength, to the resin mold significantly reduces the brightness of the LED itself.
【０００５】ところで、現在、ＬＥＤとして実用化され
ているのは、赤外、赤、黄色、緑色発光のＬＥＤであ
り、青色または紫外のＬＥＤは未だ実用化されていな
い。青色、紫外発光の発光素子はＩＩ−ＶＩ族のＺｎＳ
ｅ、ＩＶ−ＩＶ族のＳｉＣ、ＩＩＩ−Ｖ族のＧａＮ等の
半導体材料を用いて研究が進められ 最近、その中でも
一般式がＧａXＡｌ1-XＮ（但しＸは０≦Ｘ≦１であ
る。）で表される窒化ガリウム系化合物半導体が、常温
で、比較的優れた発光を示すことが発表され注目されて
いる。また、窒化ガリウム系化合物半導体を用いて、初
めてｐｎ接合を実現したＬＥＤが発表されている（応用
物理、６０巻、２号、ｐ１６３〜ｐ１６６、１９９
１）。それによるとｐｎ接合の窒化ガリウム系化合物半
導体を有するＬＥＤの発光波長は、主として４３０ｎｍ
付近にあり、さらに３７０ｎｍ付近の紫外域にも発光ピ
ークを有している。その波長は上記半導体材料の中で最
も短い波長である。しかし、そのＬＥＤは発光波長が示
すように紫色に近い発光色を有しているため視感度が悪
いという欠点がある。[0005] By the way, currently, LEDs that are put to practical use as LEDs are LEDs that emit infrared, red, yellow, and green light, and LEDs that emit blue or ultraviolet light have not been put to practical use yet. The blue and ultraviolet light-emitting elements are II-VI group ZnS.
e, studies have been made using semiconductor materials such as SiC of the IV-IV group and GaN of the III-V group, and recently, among them, the general formula is Ga X Al 1 -XN (where X is 0 ≦ X ≦ 1). The gallium nitride-based compound semiconductor represented by the formula (1) shows relatively excellent light emission at room temperature and has been attracting attention. Also, an LED that realizes a pn junction for the first time using a gallium nitride-based compound semiconductor has been announced (Applied Physics, Vol. 60, No. 2, p163-p166, 199).
1). According to this, the emission wavelength of an LED having a pn junction gallium nitride-based compound semiconductor is mainly 430 nm.
And also has an emission peak in the ultraviolet region around 370 nm. The wavelength is the shortest wavelength among the semiconductor materials. However, the LED has an emission color close to purple as indicated by the emission wavelength, and thus has a disadvantage that visibility is poor.
【０００６】本発明はこのような事情を鑑みなされたも
ので、その目的とするところは、発光素子を有するＬＥ
Ｄの視感度を良くし、またその輝度を向上させることに
ある。The present invention has been made in view of such circumstances, and an object thereof is to provide an LE having a light emitting element.
It is to improve the visibility of D and to improve its luminance.
【０００７】[0007]
【課題を解決するための手段】本発明の発光ダイオード
は、メタル上に配置されると共に、ｎ型及びｐ型に積層
されてなる窒化ガリウム系化合物半導体である発光素子
と、この発光素子を包囲する断面が凸レンズ状の樹脂
と、発光素子を包囲する前記凸レンズ状の樹脂中にあっ
て、発光素子からの可視光により励起されて、励起波長
よりも長波長の可視光を出す蛍光染料又は蛍光顔料とを
有する。According to the present invention, there is provided a light emitting diode which is a gallium nitride-based compound semiconductor which is disposed on a metal and is stacked in n-type and p-type, and surrounds the light-emitting element. The cross section to be formed is in a convex lens-shaped resin and in the convex lens-shaped resin surrounding the light emitting element, and is excited by visible light from the light emitting element, and emits visible light having a longer wavelength than the excitation wavelength. And a pigment.
【０００８】本発明の請求項２の発光ダイオードは、４
２０〜４４０ｎｍ付近の波長によって励起される蛍光体
染料又は蛍光顔料を使用する。According to the second aspect of the present invention, there is provided a light emitting diode comprising:
A fluorescent dye or a fluorescent pigment excited by a wavelength around 20 to 440 nm is used.
【０００９】本発明の請求項３の発光ダイオードの発光
素子は、メタルに対向する面の反対側に位置する同一面
に一対の電極をワイヤボンディングしている。さらに、
一方の電極は、窒化ガリウム系化合物半導体がエッチン
グされてｎ型層の表面を露出させた部分に接続されたオ
ーミック電極である。According to a third aspect of the present invention, in the light emitting device of the light emitting diode, a pair of electrodes are wire-bonded to the same surface opposite to the surface facing the metal. further,
One electrode is an ohmic electrode connected to a portion where the gallium nitride-based compound semiconductor is etched to expose the surface of the n-type layer.
【００１０】[0010]
【発明の実施の形態】図２は本発明のＬＥＤの構造を示
す一実施例である。１１はサファイア基板の上にＧａＡ
ｌＮがｎ型およびｐ型に積層されてなる青色発光素子、
２および３は図１と同じくメタルステム、メタルポス
ト、４は発光素子を包囲する樹脂モールドである。発光
素子１１の裏面はサファイアの絶縁基板であり裏面から
電極を取り出せないため、ＧａＡｌＮ層のｎ電極をメタ
ルステム２と電気的に接続するため、ＧａＡｌＮ層をエ
ッチングしてｎ型層の表面を露出させてオーミック電極
を付け、金線によって電気的に接続する手法が取られて
いる。また他の電極は図１と同様にメタルポスト３から
伸ばした金線によりｐ型層の表面でワイヤボンドされて
いる。さらに樹脂モールド４には４２０〜４４０ｎｍ付
近の波長によって励起されて４８０ｎｍに発光ピークを
有する波長を発光する蛍光染料５が添加されている。FIG. 2 is an embodiment showing the structure of an LED according to the present invention. 11 is GaAs on a sapphire substrate
a blue light-emitting element in which 1N is stacked in n-type and p-type,
Reference numerals 2 and 3 denote a metal stem and a metal post as in FIG. 1, and reference numeral 4 denotes a resin mold surrounding the light emitting element. Since the back surface of the light emitting element 11 is a sapphire insulating substrate and electrodes cannot be taken out from the back surface, the GaAlN layer is etched to expose the surface of the n-type layer to electrically connect the n electrode of the GaAlN layer to the metal stem 2. Then, an ohmic electrode is attached, and a method of electrically connecting with a gold wire is adopted. The other electrodes are wire-bonded on the surface of the p-type layer by gold wires extending from the metal posts 3 as in FIG. Further, a fluorescent dye 5 that emits at a wavelength having an emission peak at 480 nm when excited by a wavelength around 420 to 440 nm is added to the resin mold 4.
【００１１】[0011]
【発明の効果】本発明の発光ダイオードの蛍光染料又は
蛍光顔料は、発光素子から励起される短波長の光で励起
されて、励起波長よりも長波長光を発光する。逆に長波
長の光によって励起されて短波長の光を発光する蛍光顔
料もあるが、それはエネルギー効率が非常に悪く微弱に
しか発光しない。前記したように窒化ガリウム系化合物
半導体はＬＥＤに使用される半導体材料中で最も短波長
側にその発光ピークを有するものである。そのためそれ
を発光素子の材料として使用した場合、その発光素子を
包囲する樹脂モールドに蛍光染料又は蛍光顔料を添加す
るこにより、最も好適にそれら蛍光物質を励起すること
ができる。したがって、青色ＬＥＤの色補正はいうにお
よばず、蛍光染料、蛍光顔料の種類によって数々の波長
の光を変換することができる。さらに、本発明の発光ダ
イオードは、短波長の光を長波長に変えるので、エネル
ギー効率がよく、添加する蛍光染料又は蛍光顔料が微量
で済み、輝度の低下の点からも非常に好都合である。The fluorescent dye or fluorescent pigment of the light emitting diode of the present invention is excited by short wavelength light excited by the light emitting element, and emits light having a wavelength longer than the excitation wavelength. Conversely, some fluorescent pigments emit short-wavelength light when excited by long-wavelength light, but they have very poor energy efficiency and emit only weakly. As described above, a gallium nitride-based compound semiconductor has an emission peak on the shortest wavelength side among semiconductor materials used for an LED. Therefore, when it is used as a material for a light emitting element, the fluorescent substance can be most preferably excited by adding a fluorescent dye or a fluorescent pigment to a resin mold surrounding the light emitting element. Therefore, light of various wavelengths can be converted depending on the type of fluorescent dye or fluorescent pigment, not to mention color correction of the blue LED. Furthermore, since the light emitting diode of the present invention converts short-wavelength light into long-wavelength light, it has good energy efficiency, requires only a small amount of fluorescent dye or fluorescent pigment to be added, and is extremely advantageous in terms of reduction in luminance.
【図１】 従来の一ＬＥＤの構造を示す模式断面図。FIG. 1 is a schematic cross-sectional view showing the structure of a conventional LED.
【図２】 本発明のＬＥＤの一実施例の構造を示す模式
断面図。FIG. 2 is a schematic sectional view showing the structure of an embodiment of the LED of the present invention.
１１・・・発光素子 ２・・・メタルステム ３・・・メタルポスト ４・・・樹脂モールド ５・・・蛍光染料 11 light emitting element 2 metal stem 3 metal post 4 resin mold 5 fluorescent dye
Claims (3)
ｐ型に積層されてなる窒化ガリウム系化合物半導体であ
る発光素子と、この発光素子を包囲する断面が凸レンズ
状の樹脂と、発光素子を包囲する前記凸レンズ状の樹脂
中にあって、発光素子からの可視光により励起されて、
励起波長よりも長波長の可視光を出す蛍光染料又は蛍光
顔料とを有することを特徴とする発光ダイオード。1. A light-emitting element which is a gallium nitride-based compound semiconductor which is disposed on a metal and stacked in n-type and p-type, a resin having a convex lens-shaped cross section surrounding the light-emitting element, and a light-emitting element. In the convex lens-shaped resin surrounding, excited by visible light from the light emitting element,
A light emitting diode comprising: a fluorescent dye or a fluorescent pigment that emits visible light having a wavelength longer than the excitation wavelength.
４４０ｎｍ付近の波長によって励起される請求項１記載
の発光ダイオード。2. The method according to claim 2, wherein the fluorescent dye or the fluorescent pigment is 420 to
The light emitting diode according to claim 1, wherein the light emitting diode is excited by a wavelength around 440 nm.
反対側に位置する同一面に一対の電極がワイヤボンディ
ングされると共に一方の電極は窒化ガリウム系化合物半
導体がエッチングされてｎ型層の表面を露出させた部分
に接続されたオーミック電極を有する請求項１記載の発
光ダイオード。3. The light-emitting element has a pair of electrodes wire-bonded to the same surface located on a side opposite to a surface facing the metal, and one of the electrodes is formed by etching a gallium nitride-based compound semiconductor to form an n-type layer. The light-emitting diode according to claim 1, further comprising an ohmic electrode connected to a portion where the surface is exposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP37712898A JP3366586B2 (en) | 1998-12-28 | 1998-12-28 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP37712898A JP3366586B2 (en) | 1998-12-28 | 1998-12-28 | Light emitting diode |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30639397A Division JP2900928B2 (en) | 1997-10-20 | 1997-10-20 | Light emitting diode |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001313286A Division JP3645207B2 (en) | 2001-09-03 | 2001-09-03 | Light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11261114A true JPH11261114A (en) | 1999-09-24 |
| JP3366586B2 JP3366586B2 (en) | 2003-01-14 |
Family
ID=18508295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP37712898A Expired - Lifetime JP3366586B2 (en) | 1998-12-28 | 1998-12-28 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3366586B2 (en) |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| JP2002171000A (en) * | 2000-09-21 | 2002-06-14 | Sharp Corp | Semiconductor light emitting device and light emitting display comprising it |
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| WO2006112417A1 (en) | 2005-04-15 | 2006-10-26 | Asahi Glass Company, Limited | Glass-sealed light-emitting device, circuit board with glass-sealed light-emitting device, and methods for manufacturing those |
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1998
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| US6809475B2 (en) | 2000-06-15 | 2004-10-26 | Lednium Pty Limited | Led lamp with light-emitting junctions arranged in a three-dimensional array |
| WO2001097287A1 (en) * | 2000-06-15 | 2001-12-20 | Systemax Pty. Ltd. | Led lamp |
| US7320632B2 (en) | 2000-06-15 | 2008-01-22 | Lednium Pty Limited | Method of producing a lamp |
| US7352127B2 (en) | 2000-06-15 | 2008-04-01 | Lednium Pty Limited | LED lamp with light-emitting junction arranged in three-dimensional array |
| JP2002171000A (en) * | 2000-09-21 | 2002-06-14 | Sharp Corp | Semiconductor light emitting device and light emitting display comprising it |
| JP2007274009A (en) * | 2000-09-21 | 2007-10-18 | Sharp Corp | Semiconductor light emitting device and luminous display device using the same |
| US7084435B2 (en) | 2001-07-26 | 2006-08-01 | Matsushita Electric Works, Ltd. | Light emitting device using LED |
| US7704762B2 (en) | 2002-06-14 | 2010-04-27 | Lednium Technology Pty Limited | Lamp and method of producing a lamp |
| US10340424B2 (en) | 2002-08-30 | 2019-07-02 | GE Lighting Solutions, LLC | Light emitting diode component |
| US6853010B2 (en) | 2002-09-19 | 2005-02-08 | Cree, Inc. | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
| US9608166B2 (en) | 2003-08-14 | 2017-03-28 | Cree, Inc. | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
| US7029935B2 (en) | 2003-09-09 | 2006-04-18 | Cree, Inc. | Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same |
| US7183587B2 (en) | 2003-09-09 | 2007-02-27 | Cree, Inc. | Solid metal block mounting substrates for semiconductor light emitting devices |
| USRE45796E1 (en) | 2004-12-23 | 2015-11-10 | Cree, Inc. | Light emitting diode arrays for direct backlighting of liquid crystal displays |
| US7518160B2 (en) | 2005-10-31 | 2009-04-14 | Kyocera Corporation | Wavelength converter, lighting system, and lighting system assembly |
| JP2006060254A (en) * | 2005-10-31 | 2006-03-02 | Nichia Chem Ind Ltd | Light emitting diode |
| US8858004B2 (en) | 2005-12-22 | 2014-10-14 | Cree, Inc. | Lighting device |
| US9220149B2 (en) | 2006-01-20 | 2015-12-22 | Cree, Inc. | Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources |
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| US10139095B2 (en) | 2012-05-04 | 2018-11-27 | GE Lighting Solutions, LLC | Reflector and lamp comprised thereof |
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| JP3366586B2 (en) | 2003-01-14 |
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