JP3687872B2 - Method for producing electric furnace material for heat treatment such as high purity silicon, and electric furnace material for heat treatment - Google Patents
Method for producing electric furnace material for heat treatment such as high purity silicon, and electric furnace material for heat treatment Download PDFInfo
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- JP3687872B2 JP3687872B2 JP17987196A JP17987196A JP3687872B2 JP 3687872 B2 JP3687872 B2 JP 3687872B2 JP 17987196 A JP17987196 A JP 17987196A JP 17987196 A JP17987196 A JP 17987196A JP 3687872 B2 JP3687872 B2 JP 3687872B2
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
- C04B41/5035—Silica
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/10—Compositions or ingredients thereof characterised by the absence or the very low content of a specific material
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/10—Compositions or ingredients thereof characterised by the absence or the very low content of a specific material
- C04B2111/1025—Alkali-free or very low alkali-content materials
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- Furnace Housings, Linings, Walls, And Ceilings (AREA)
Description
【０００１】
【産業上の利用分野】
本発明は、高純度シリコン等の熱処理用電気炉材の製造方法及び前記製造方法で得られた熱処理用電気炉材、特に溶融石英ガラス、合成シリカガラス、シリコンウエハー等の半導体用材料、光学用材料等を熱処理するための電熱処理用電気炉材の製造方法、及び該製造方法で得られた熱処理用電気炉材に関する。
【０００２】
【従来技術】
従来、天然水晶や石英を溶融したいわゆる“溶融石英”ガラスは、高純度で耐熱性が高く、しかも耐急加熱急冷却性に優れているところから、シリコンウエハーボート、チャンバー、ベルジャー、洗浄槽、ルツボ等の半導体工業用治具に、またＳｉＣｌ4等の高純度シリコン化合物を火炎加水分解法等で得た合成シリカガラスは高純度で紫外域、赤外域の光透過性に優れているところから光ファイバ、光リソグラフィー用レンズ、プリズム等の光学材料として、さらにＳｉ3Ｎ4、ＳｉＣ等のシリコン化合物はその耐熱性の良さから炉内で使用する耐熱材料として使用されてきた。前記治具にあってはその製造時の歪除去のためのアニール処理、その後製品として使用されるための加熱処理が行われ、また光学材料にあっては複屈折の低減、屈折率分布を高均質にするのための加熱処理が行われる。さらに前記治具や耐熱材料には半導体製品を載置し加熱炉中で熱処理することが行われる。これらの加熱処理はいずれも高温で長時間行われるところから、処理中に電気炉の炉材から不純物金属元素が揮発し治具や光学材料、或は半導体製品等を汚染することが時々起こる。特に拡散速度の大きいＮａの汚染が大きな問題となっており、中でも単結晶シリコン、シリコンウエハーの熱処理においてはさらにＦｅ、Ｎｉ、Ｃｕ等の金属元素による汚染も問題点となっている。こうした炉材中の不純物金属元素による汚染を低減するため炉材を例えば低酸素分圧下（Ｎ2気流中）、１，３００〜１，５００℃で１００〜１２０時間の空焼きしたり、或は高純度Ａｌ2Ｏ3板を炉床板として用い、その上に被処理物を載置する方法等が提案されているが、いずれも不純物金属元素の汚染を充分防ぐものではなかった。
【０００３】
【発明が解決しようとする課題】
こうした現状に鑑み、本発明者等は鋭意研究を重ねた結果、アルミナを主成分とする熱処理用電気炉材を特定の処理条件で純化処理することでＮａ、Ｆｅ、Ｎｉ、Ｃｕ等の不純物金属元素、特に拡散速度の早いＮａによる汚染の少ない炉材を製造できることを見出し、本発明を完成したものである。すなわち、
【０００４】
本発明は、高純度シリコン等をＮａ、Ｆｅ、Ｎｉ、Ｃｕ等の不純物金属元素で汚染することの少ない熱処理用電気炉材の製造方法を提供することを目的とする。
【０００５】
また、本発明は、上記の製造方法で得られた熱処理用電気炉材を提供することを目的とする。
【０００６】
【課題を解決するための手段】
上記目的を達成する本発明は、アルミナ７０〜９９ｗｔ％、シリカ３０〜１ｗｔ％を主成分とする原料粉を焼成して得た嵩密度が０．１〜１ g/cm 3 の熱処理用電気炉材を塩化水素ガス、塩素ガス、フッ素ガス及びフッ化水素ガスから選ばれる少なくとも１種を含有するガス雰囲気中で、４００〜１４００℃で純化処理するか、またはさらに硝酸、塩酸、硫酸及びフッ酸から選ばれる少なくとも１種の水溶液を用い２０〜８０℃で洗浄純化する高純度シリコン等の熱処理用電気炉材の製造方法、及び該製造方法で得られた熱処理用電気炉材に関する。
【０００７】
上記のとおり本発明の炉材は、アルミナ７０〜９９ｗｔ％、シリカ３０〜１ｗｔ％を主成分とする原料粉を焼成して得た嵩密度が０．１〜１ g/cm 3 の熱処理用電気炉材であるが、該炉材の製造原料粉としては粒径１〜５００μｍ、純度９９．９９ｗｔ％のアルミナ粉及びシリカ粉が用いられる。前記原料が３０〜１ｗｔ％のシリカ粉を含有することで焼結が容易となるがその含有量が３０ｗｔ％を超えると炉材の使用最高温度が約１４００℃以下と低くなり、またシリカ粉の含有量が１ｗｔ％未満では焼成温度が高温過ぎ、かつ高緻密化し純化処理が困難となる。
【０００８】
本発明の熱処理用電気炉材の製造方法にあっては、前記原料に、さらに必要に応じて少量のバインダーを加えそれらをＶ型混合器、ボールミル等で均一に混合したのち、押出成形、流延成形等で炉材に成形し、それを約１，５００〜１，８００℃で焼成し、嵩密度０．１〜１ｇ／ｃｍ3の炉材をえ、さらに（ｉ）塩化水素ガス、塩素ガス、フッ素ガス及びフッ化水素ガスから選ばれる少なくとも１種を含有するガス雰囲気中で、加熱純化処理するか、又は（ｉｉ）前記加熱純化処理に続いてさらに硝酸、塩酸、硫酸及びフッ酸から選ばれる少なくとも１種の水溶液による洗浄純化処理をする。炉材の嵩密度が０．１〜１ｇ／ｃｍ3の範囲にあることで純化処理が良好に行える。
【０００９】
上記加熱純化処理でのガス雰囲気は塩化水素ガス、塩素ガス、フッ素ガス及びフッ化水素ガスから選ばれる少なくとも１種を窒素、アルゴン等の不活性ガスで希釈するのがよく、その雰囲気ガス中での処理温度は４００〜１４００℃、好ましくは６００〜１，０００℃の範囲がよい。また洗浄純化処理においては硝酸、塩酸、硫酸及びフッ酸から選ばれる少なくとも１種の水溶液で２０〜８０℃、好ましくは３０〜６０℃で洗浄するのがよい。前記加熱純化処理は単独でもまた複数回繰り返してもよく、さらにこの加熱純化処理に洗浄処理を組み合わせてもよい。より好ましくは加熱純化処理に引き続き洗浄処理を行うのがよい。
【００１０】
上記純化処理で熱処理用電気炉材中のＮａ含有量を０．０２ｗｔ％以下、好ましくは１〜１００ｗｔｐｐｍとする。特に（ｉｉ）の純化方法を実施することでＮａ含有量が０．０２ｗｔ％以下、Ｃｕの含有量が５０ｗｔｐｐｍ以下、Ｎｉの含有量が５０ｗｔｐｐｍ以下及びＦｅの含有量が１０００ｗｔｐｐｍ以下とすることができ８００〜１，３００℃の温度で単結晶シリコン、シリコンウエハー等の高純度シリコン、又はレンズ用高純度合成シリカガラス等を処理しても不純物金属元素による汚染が殆ど起こることがなく、しかも嵩密度が上記範囲にあることから１０００℃における熱伝導率が０．１〜１ｋｃａｌ／ｍｈ℃となり保温効果が高い。
【００１１】
【発明の実施の形態】
次に具体例に基づいて本発明を詳細に説明するが、本発明はそれにより限定されるものではない。
【００１３】
【実施例】
実施例１〜６
９９．９９ｗｔ％以上のアルミナ粉（α−アルミナ粉）約１０ｋｇとシリカ粉約２ｋｇを準備し、それを表１の組成割合でアルミナ製ボールで混合し、さらに少量のバインダーを添加したのち押出成形して炉材を形成し、それを約１，５００〜１，８００℃で常圧焼成して１５０×１５０×２０ｍｍの板状母材を作成した。該母材の蛍光Ｘ線分光法による組成は表１のとおりであった。
【００１４】
上記板状母材を横型円筒電気炉に約直径２００×長さ１０００ｍｍのシリカガラス炉芯管を挿込した内部に設置し、窒素ガスで置換したのち、表１に示す成分の純化ガスを５０〜１００ｍｌ／ｍｉｎの流量で流した。処理温度及び処理時間は表１のとおりである。前記加熱純化処理した板状母材を表１に示す組成のフッ化水素酸水溶液で洗浄処理し、次いでイオン交換水で洗浄し、乾燥した。得られた板状母材を中のＮａ、Ｃｕ、Ｎｉ、Ｆｅの濃度分析を原子吸光光度法で行い、また２５℃における嵩密度の測定および１０００℃における熱伝導率測定をそれぞれ行った。その結果を表１に示す。
【００１５】
また、板状母材を二ケイ化モリブデンをヒータとする高温大気炉内の炉材とし使用し、該炉の床面上に寸法１００×１００×５ｍｍのＳｕｐｒａｓｉｌ−Ｆ３１０（信越石英（株）シリカガラス製品）を敷き、その上に汚染評価用サンプルとしてフッ化水素酸により表層部約３μｍをエッチング処理した直径１０×長さ５０ｍｍのＨｅｒａｌｕｘ−Ｅ−ＬＡ（信越石英（株）シリカガラス製品）を置き１，１００℃、１００時間加熱処理した。
【００１６】
次いで、このサンプルをフッ化水素酸により表層部約１０μｍをエッチング除去して、残りのサンプルをすべて溶解調整し、これを原子吸光光度法にて不純物濃度分析を行った。その測定結果を表１に示す。
【００１７】
【表１】
比較例１
実施例１と同一の板状母材の高純化処理を行わないものをそのまま加熱処理用炉材として用い、実施例１と同様のサンプルの加熱処理汚染評価を行った。その結果を表２に示す。
【００１９】
比較例２
比較例１において、アルミナ組成比が小さく、不純物金属元素含有量の大きい加熱処理用炉材を用いて、実施例１と同様のサンプルの加熱処理汚染評価を行った。その結果を表２に示す。
【００２０】
比較例３
実施例１において高純化処理の加熱純化処理温度を２００℃で行った加熱処理用炉材を用いて、実施例１のサンプルの加熱処理汚染評価を行った。その結果を表２に示す。
【００２１】
【表２】
〈評価〉
本発明の製造方法で得られた熱処理用炉材を用いて電気炉を作成し、該電気炉でシリカガラスサンプルを加熱処理しても表１、２から明らかなように前記サンプルを殆ど汚染することがない。
【００２３】
一方、比較例１〜３に示すように純化処理しない熱処理用炉材の場合には不純物金属元素による汚染、特にＮａ汚染が大きい。また、比較例２にみるようにアルミナ含有量が少ない炉材は最高使用温度が約１３００℃と低く、その嵩密度も０．０９ｇ／ｃｍ3と低く機械的強度が弱く、炉材としての基本性能が好ましくなかった。
【００２４】
【発明の効果】
本発明の製造方法では、高純度の原料粉を用いて熱処理用炉材を製造し、それを純化処理するという簡便な方法で不純物金属元素を発生させることが少ない加熱処理用炉材を容易に製造できる。前記加熱処理用炉材で電気炉を構築することで高純度シリコン等を８００〜１３００℃で熱処理しても不純物金属元素、特にアルカリ金属元素で汚染されることがなく、その工業的価値の高い炉材である。[0001]
[Industrial application fields]
The present invention relates to a method for producing an electric furnace material for heat treatment such as high-purity silicon, and an electric furnace material for heat treatment obtained by the production method, in particular, semiconductor materials such as fused silica glass, synthetic silica glass, silicon wafer, and optical The present invention relates to a method for manufacturing an electric furnace material for electric heat treatment for heat-treating materials and the like, and an electric furnace material for heat treatment obtained by the manufacturing method.
[0002]
[Prior art]
Conventionally, so-called “fused quartz” glass, which is made by melting natural quartz or quartz, has high purity, high heat resistance, and excellent resistance to rapid heating and rapid cooling. From silicon wafer boats, chambers, bell jars, cleaning tanks, Synthetic silica glass obtained from semiconductor industry jigs such as crucibles, and high-purity silicon compounds such as SiCl 4 by flame hydrolysis, etc. has high purity and is excellent in light transmittance in the ultraviolet and infrared regions. Silicon compounds such as Si 3 N 4 and SiC have been used as heat-resistant materials for use in furnaces as optical materials for optical fibers, optical lithography lenses, prisms, and the like. The jig is annealed to remove strain during its manufacture, and then heated to be used as a product. In the optical material, birefringence is reduced and the refractive index distribution is increased. Heat treatment for homogenization is performed. Further, a semiconductor product is placed on the jig or the heat-resistant material and heat-treated in a heating furnace. Since all of these heat treatments are performed at a high temperature for a long time, the impurity metal elements volatilize from the furnace material of the electric furnace during the treatment and sometimes contaminate jigs, optical materials, or semiconductor products. In particular, contamination of Na, which has a high diffusion rate, is a serious problem. In particular, contamination by metal elements such as Fe, Ni, Cu, etc. is also a problem in the heat treatment of single crystal silicon and silicon wafers. In order to reduce the contamination by the impurity metal elements in the furnace material, the furnace material is baked, for example, at 1,300 to 1,500 ° C. for 100 to 120 hours under a low oxygen partial pressure (in a N 2 stream), or A method has been proposed in which a high-purity Al 2 O 3 plate is used as a hearth plate, and an object to be processed is placed thereon. However, none of these methods sufficiently prevent contamination with impurity metal elements.
[0003]
[Problems to be solved by the invention]
In view of the current situation, the present inventors have conducted extensive research, and as a result, by purifying the electric furnace material for heat treatment mainly composed of alumina under specific processing conditions, impurity metals such as Na, Fe, Ni, Cu, etc. The inventors have found that a furnace material with low contamination by Na, which has a high diffusion rate, can be produced, and the present invention has been completed. That is,
[0004]
An object of this invention is to provide the manufacturing method of the electric furnace material for heat processing which hardly contaminates high purity silicon etc. with impurity metal elements, such as Na, Fe, Ni, and Cu.
[0005]
Moreover, an object of this invention is to provide the electric furnace material for heat processing obtained by said manufacturing method.
[0006]
[Means for Solving the Problems]
The present invention to achieve the above object, alumina 70～99Wt%, heat-treating furnace of bulk density silica 30～1Wt% was obtained by firing a raw material powder whose main component is 0.1 to 1 g / cm 3 The material is purified at 400 to 1400 ° C. in a gas atmosphere containing at least one selected from hydrogen chloride gas, chlorine gas, fluorine gas and hydrogen fluoride gas, or nitric acid, hydrochloric acid, sulfuric acid and hydrofluoric acid The present invention relates to a method for producing an electric furnace material for heat treatment such as high-purity silicon that is cleaned and purified at 20 to 80 ° C. using at least one aqueous solution selected from the above, and an electric furnace material for heat treatment obtained by the production method.
[0007]
Furnace material of the present invention as described above, alumina 70～99Wt%, the heat treatment for the electrical bulk density silica 30～1Wt% was obtained by firing a raw material powder whose main component is 0.1 to 1 g / cm 3 Although it is a furnace material, alumina powder and silica powder having a particle size of 1 to 500 μm and a purity of 99.99 wt% are used as the raw material powder for manufacturing the furnace material. When the raw material contains 30 to 1 wt% of silica powder , sintering becomes easy, but when the content exceeds 30 wt%, the maximum use temperature of the furnace material is reduced to about 1400 ° C or lower, and the silica powder If the content is less than 1 wt%, the firing temperature is too high and the density becomes high and the purification process becomes difficult.
[0008]
In the method for producing an electric furnace material for heat treatment according to the present invention, a small amount of binder is further added to the raw material as necessary, and these are uniformly mixed with a V-type mixer, a ball mill, etc. It is formed into a furnace material by rolling or the like, fired at about 1,500 to 1,800 ° C. to obtain a furnace material having a bulk density of 0.1 to 1 g / cm 3 , and (i) hydrogen chloride gas, chlorine Heat purification in a gas atmosphere containing at least one selected from gas, fluorine gas and hydrogen fluoride gas, or (ii) following nitric acid, hydrochloric acid, sulfuric acid and hydrofluoric acid following the heat purification treatment A cleaning purification treatment is performed with at least one selected aqueous solution. When the bulk density of the furnace material is in the range of 0.1 to 1 g / cm 3 , the purification treatment can be performed satisfactorily.
[0009]
The gas atmosphere in the heat purification treatment is preferably diluted with an inert gas such as nitrogen or argon at least one selected from hydrogen chloride gas, chlorine gas, fluorine gas and hydrogen fluoride gas. The processing temperature is 400 to 1400 ° C, preferably 600 to 1,000 ° C. In the cleaning purification treatment, it is preferable to wash at 20 to 80 ° C., preferably 30 to 60 ° C. with at least one aqueous solution selected from nitric acid, hydrochloric acid, sulfuric acid and hydrofluoric acid. The heat purification treatment may be repeated alone or a plurality of times, and a cleaning treatment may be combined with the heat purification treatment. More preferably, the cleaning process is performed subsequent to the heat purification process.
[0010]
In the above purification treatment, the Na content in the electric furnace material for heat treatment is set to 0.02 wt% or less, preferably 1 to 100 wt ppm. In particular, by performing the purification method (ii), the Na content can be 0.02 wt% or less, the Cu content can be 50 wtppm or less, the Ni content can be 50 wtppm or less, and the Fe content can be 1000 wtppm or less. Even if high-purity silicon such as single crystal silicon, silicon wafer, or high-purity synthetic silica glass for lenses is processed at a temperature of 800 to 1,300 ° C., contamination with impurity metal elements hardly occurs, and bulk density Is in the above range, the thermal conductivity at 1000 ° C. is 0.1 to 1 kcal / mh ° C., and the heat retention effect is high.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Next, the present invention will be described in detail based on specific examples, but the present invention is not limited thereto.
[0013]
【Example】
Examples 1-6
About 10 kg of alumina powder (α-alumina powder) of 99.99 wt% or more and about 2 kg of silica powder are prepared, mixed with alumina balls at the composition ratio shown in Table 1, and a small amount of binder is added, followed by extrusion. Then, a furnace material was formed, and this was fired at normal pressure at about 1,500 to 1,800 ° C. to prepare a plate-like base material of 150 × 150 × 20 mm. The composition of the base material by fluorescent X-ray spectroscopy was as shown in Table 1.
[0014]
The plate-shaped base material is installed in a horizontal cylindrical electric furnace with a silica glass furnace core tube having a diameter of about 200 × 1000 mm in length, and is replaced with nitrogen gas. It flowed at a flow rate of ˜100 ml / min. The processing temperature and processing time are as shown in Table 1. The heat-purified plate-like base material was washed with a hydrofluoric acid aqueous solution having the composition shown in Table 1, then washed with ion-exchanged water and dried. The obtained plate-like base material was analyzed for the concentration of Na, Cu, Ni, and Fe by atomic absorption photometry, and the bulk density at 25 ° C and the thermal conductivity at 1000 ° C were measured. The results are shown in Table 1.
[0015]
In addition, a plate-shaped base material is used as a furnace material in a high-temperature atmospheric furnace using molybdenum disilicide as a heater, and Suprasil-F310 (Shin-Etsu Quartz Co., Ltd. Heralux-E-LA (Shin-Etsu Quartz Co., Ltd. silica glass product) 10 mm in diameter and 50 mm in length with a surface layer of about 3 μm etched with hydrofluoric acid as a contamination evaluation sample. The plate was heat-treated at 1,100 ° C. for 100 hours.
[0016]
Subsequently, about 10 μm of the surface layer portion of this sample was removed by etching with hydrofluoric acid, all the remaining samples were dissolved and adjusted, and the impurity concentration analysis was performed by atomic absorption spectrophotometry. The measurement results are shown in Table 1.
[0017]
[Table 1]
Comparative Example 1
The same plate-like base material that was not subjected to the purification treatment as in Example 1 was used as it was as a furnace material for heat treatment, and the same heat treatment contamination evaluation as in Example 1 was performed. The results are shown in Table 2.
[0019]
Comparative Example 2
In Comparative Example 1, the heat treatment contamination evaluation of the sample similar to Example 1 was performed using a heat treatment furnace material having a small alumina composition ratio and a large impurity metal element content. The results are shown in Table 2.
[0020]
Comparative Example 3
The heat treatment contamination evaluation of the sample of Example 1 was performed using the furnace material for heat treatment that was performed at 200 ° C. in the heat purification treatment temperature of the high purification treatment in Example 1. The results are shown in Table 2.
[0021]
[Table 2]
<Evaluation>
Even if an electric furnace is prepared using the furnace material for heat treatment obtained by the production method of the present invention, and the silica glass sample is heat-treated in the electric furnace, the sample is almost contaminated as apparent from Tables 1 and 2. There is nothing.
[0023]
On the other hand, as shown in Comparative Examples 1 to 3, in the case of a furnace for heat treatment that is not purified, contamination by impurity metal elements, particularly Na contamination, is large. Further, as seen in Comparative Example 2, the furnace material having a low alumina content has a low maximum use temperature of about 1300 ° C., a bulk density of 0.09 g / cm 3 and a low mechanical strength. The performance was not favorable.
[0024]
【The invention's effect】
In the production method of the present invention, a furnace material for heat treatment is produced with a simple method of producing a furnace material for heat treatment using high-purity raw material powder and purifying it. Can be manufactured. By constructing an electric furnace with the furnace material for heat treatment, high-purity silicon and the like are not contaminated with impurity metal elements, particularly alkali metal elements, even when heat-treated at 800 to 1300 ° C., and have high industrial value. It is a furnace material.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17987196A JP3687872B2 (en) | 1996-06-21 | 1996-06-21 | Method for producing electric furnace material for heat treatment such as high purity silicon, and electric furnace material for heat treatment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17987196A JP3687872B2 (en) | 1996-06-21 | 1996-06-21 | Method for producing electric furnace material for heat treatment such as high purity silicon, and electric furnace material for heat treatment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH107476A JPH107476A (en) | 1998-01-13 |
| JP3687872B2 true JP3687872B2 (en) | 2005-08-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP17987196A Expired - Fee Related JP3687872B2 (en) | 1996-06-21 | 1996-06-21 | Method for producing electric furnace material for heat treatment such as high purity silicon, and electric furnace material for heat treatment |
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| Country | Link |
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| JP (1) | JP3687872B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6574991B1 (en) | 1998-08-13 | 2003-06-10 | Corning Incorporated | Pure fused silica, furnace and method |
| JP3723396B2 (en) | 1999-02-23 | 2005-12-07 | サンゴバン・ティーエム株式会社 | High purity crystalline inorganic fiber and method for producing the same |
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1996
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| JPH107476A (en) | 1998-01-13 |
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