JP3660817B2 - Electronic circuit module - Google Patents

Electronic circuit module Download PDF

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Publication number
JP3660817B2
JP3660817B2 JP36697498A JP36697498A JP3660817B2 JP 3660817 B2 JP3660817 B2 JP 3660817B2 JP 36697498 A JP36697498 A JP 36697498A JP 36697498 A JP36697498 A JP 36697498A JP 3660817 B2 JP3660817 B2 JP 3660817B2
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Japan
Prior art keywords
lid
semiconductor element
electronic circuit
multilayer wiring
wiring board
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JP36697498A
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Japanese (ja)
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JP2000195996A (en
Inventor
貴紀 生田
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Kyocera Corp
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Kyocera Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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Description

【0001】
【発明の属する技術分野】
本発明は各種の電子機器や電子装置等の重要部に用いられる、基板上に搭載された半導体素子を金属ケース等の蓋体で覆って成る電子回路モジュールに関し、特に蓋体を半導体素子の放熱構造に利用した電子回路モジュールに関する。
【0002】
【従来の技術】
最近の電子機器や電子装置に対しては小型化や薄型化・高機能化・低コスト化等の要求が絶えることがなく、それらの要求を実現するために、電子機器や電子装置を構成する半導体装置である電子回路モジュールに対しても同様に小型化・薄型化・高機能化・低コスト化の検討が急速に押し進められている。
【0003】
このような電子回路モジュールは、一般に、回路基板を構成する基板上に電子部品や半導体素子が搭載されて電子回路を構成し、さらに電子回路の保護や電磁シールドのためにこれら電子部品や半導体素子を覆うように金属ケースが取着されることにより構成されている。
【0004】
この電子回路モジュールを構成する基板には、例えば、酸化アルミニウム質焼結体を主成分とするセラミックス材料や窒化アルミニウム質焼結体を主成分とする高熱伝導性のセラミックス材料、あるいはガラス材料と有機材料とから成るガラスエポキシ、またはセラミックス材料に比べて低温焼成が可能なガラスセラミックス等が用いられている。これらの基板材料について電子回路モジュールでは、その用途によって以下のように各基板材料が使い分けられている。
【0005】
例えば、酸化アルミニウム質焼結体を主成分とするセラミックス材料は、安定性や信頼性の高い絶縁材料であるが、約1400〜1650℃程度の高温で焼成しなければならないために配線導体の材料に高融点金属であるタングステンやモリブデン等を用いる必要があり、これら高融点金属が高比抵抗金属材料であることから、高速信号処理を行なう電子回路モジュールには適用が困難である。
【0006】
また、窒化アルミニウム質焼結体を主成分とする高熱伝導性のセラミックス材料は、良好な放熱性を有する点では有効であるが、一般的な民生分野の電子回路モジュールに対しては高価であり、低コスト化を図ることが困難である。
【0007】
また、ガラス材料と有機材料とから成るガラスエポキシは、安価であるが耐熱性が不十分であり、熱的な安定性も要求される電子回路モジュールには不向きである。
【0008】
これに対し、セラミックス材料に比べて低温でかつ短時間で焼成可能であるガラスセラミックスは、低コストで作製することができ、さらに配線導体の材料に低融点金属材料であるAuやAg・Cu等の低比抵抗金属材料を使用できるため、高速信号処理を行なう電子回路モジュールに有利である。
【0009】
また、これらの基板材料は用途によって使い分けられ、近年の電子回路モジュールの高機能化に対し、半導体素子を直接搭載して小型化を達成するに際して、半導体素子の小型化・高密度化・高電力化に伴う半導体素子の発熱を以下に放熱させるかが重要な課題となっている。その放熱対策の手法としては、例えば、高熱伝導率材料からなる基板に直接に半導体素子を実装する手法や、半導体素子直下の基板に多数のサーマルビアホールと呼ばれる放熱部材を基板に貫通させて形成する手法等が挙げられる。
【0010】
一方、半導体素子の搭載における電気的接続手法についても、実装面積の小型化を図るため、従来のワイヤボンディングに変わり、金属バンプなどを用いたいわゆるフリップチップ実装等の手法が実用化されている。
【0011】
さらに、基板の小型化の観点から、基板の表面側に半導体素子を搭載するのではなく、基板の裏面側にキャビティを設けて半導体素子を埋設して搭載することにより、基板表面のチップ部品実装面積を増加させて有効に活用することによって、さらなる小型化が可能となっている。
【0012】
【発明が解決しようとする課題】
しかしながら、さらに小型化と低コスト化とを両立させた電子回路モジュ一ルの要求が強まっており、その中で半導体素子の信頼性を確保するために、電子回路モジュールに対しては従来以上の良好な放熱性が必要とされるようになっている。
【0013】
そのような放熱性の確保は、例えば基板の裏面側に設けたキャビティの底部から基板の表面に貫通させてサーマルビアホールと言われる放熱用貫通導体を設置し、これを基板の表面に形成した金属電極部に接続して、この金属電極部に金属等から成る放熱部材を半田付けにより取着することによって達成することができる。さらに、その金属放熱部材を放熱性の良い金属等から成る、電子回路モジュールのケース(蓋体)と密着させることにより、さらなる放熱が可能となる。
【0014】
しかしながら、サーマルビアホールは基板を貫通して形成されることによって半導体素子からの発熱を伝達し放熱させているため、サーマルビアホールが基板を貫通している部分では多層配線基板の内部の回路配線を任意に配置することが不可能となり、例えば内層される回路配線はサーマルビアホールを避けて配置せざるを得ないため、回路配線の引き回しが長くなって電気的損失を増加させてしまう等、電子回路モジュールの小型化の面で大きな制約を受けるという問題点があった。
【0015】
さらに、放熱部材を余分に用意する必要があると同時に、ケ一スとの接続においてその放熱部材の高さがケ一スの高さつまり製品高さを決定してしまい、また、放熱部材を取着するための半田付けにおいて半田量の制御や半田厚み制御が困難であることから、製品高さのばらつきが大きくなってしまうという問題点があった。
【0016】
本発明は上記従来技術の問題点に鑑みて案出されたものであり、その目的は、安価な多層回路基板を用いて内部の回路配線を任意に配置することができるとともに半導体素子からの発熱を効率よく放熱することができ、高密度化・小型化・低コスト化の要求に対応可能な高信頼性の電子回路モジュールを提供することにある。
【0017】
【課題を解決するための手段】
本発明の電子回路モジュールは、多層配線基板の上面に、半導体素子搭載部および蓋体当接部を有する熱伝導層が前記多層配線基板の絶縁層の最上層の1層分以上の厚みで形成され、半導体素子が前記半導体素子搭載部に搭載されるとともに、熱伝導材料から成り、内側に突出部を有する蓋体が前記突出部を前記蓋体当接部に当接させて取着されていることを特徴とするものである。
【0018】
【発明の実施の形態】
以下、本発明の電子回路モジュールについて、図面を参照しながら詳細に説明する。
【0019】
図1は本発明の電子回路モジュールの実施の形態の一例を示す、蓋体を除いた状態の上面図であり、図2は蓋体を取着した状態を示す図1におけるA−A’線断面図である。
【0020】
これらの図において、1は電子回路モジュールの基板本体部となる多層配線基板であり、複数の絶縁層と回路配線層および貫通導体等により回路基板を構成している。この多層配線基板1には、セラミック多層配線基板やガラスセラミック多層配線基板を始めとして、ガラスエポキシ基板によるもの等種々の材料から成る基板をを用いることができる。
【0021】
2は多層配線基板1の上面に形成された熱伝導層であり、この熱伝導層2は多層配線基板1の上面における半導体素子搭載部2aおよび蓋体当接部2bを有している。このような熱伝導層2には、多層配線基板1の絶縁層間の電気的導通を確保するためのビア導体等と同様の金属材料を始めとする熱伝導性の良好な伝熱材料を用いることができる。例えば、ビア導体と同様に導体ペーストを用いて形成する場合であれば、Ag・Au・Cu等の金属粉末と有機バインダ等により調製したペーストを用いればよく、多層配線基板1の絶縁層を構成するセラミックグリーンシートに形成した凹部に印刷し充填して焼成させること等により所望の形状・寸法の熱伝導層2を形成すればよい。
【0022】
なお、熱伝導層2の寸法としては、厚みは例えば多層配線基板1の絶縁層の最上層の1層分があればよいが、数層分にわたる厚みとすれば熱伝導性の点で有利となる。また、面積は半導体素子3を搭載する半導体素子搭載部2aと後述する蓋体5の突出部5aを当接させる蓋体当接部2bとが確保できる面積があればよく、半導体素子3からの発熱を十分に逃がせるように考慮する。
【0023】
3は半導体素子であり、半導体素子搭載部2aにAuSnろうやAuSiろう、あるいは熱硬化型Agペースト等の熱伝導性の良好な接着材料により接着されて搭載され、多層配線基板1の回路配線導体とワイヤボンディング等により電気的に接続されるとともに、その動作に伴う発熱は熱伝導層2に伝えられることとなる。また、半導体素子3は、搭載後に素子およびボンディングワイヤ等を保護する目的で、半導体素子封止用エポキシ樹脂やシリコーン樹脂等の封止樹脂により封止される。
【0024】
また、いわゆるフリップチップ実装法等の手法により金属バンプを介して接続し、半導体素子3の下面と多層配線基板1(半導体素子搭載部2a)との間に熱伝導の良好な絶縁樹脂、いわゆるアンダーフィルを注入して、熱伝導層2への半導体素子3の熱の伝導を良好なものとすることもできる。
【0025】
4は半導体素子3とともに多層配線基板1の上面に搭載され実装される各種の電子部品であり、例えばチップコンデンサやチップ抵抗・チップインダクタ等である。
【0026】
5は蓋体であり、熱伝導材料から成り、多層配線基板1にその上面を覆って取着され、基板1に搭載された半導体素子3や電子部品4を容器内部に収容して保護するものである。また、蓋体5は内側に突出部5aを有しており、この突出部5aを熱伝導層2の蓋体当接部2bに当接させている。突出部5aと蓋体当接部2bとは、熱伝導性を高めるために、半田等を用いベルト式リフロー炉等を用いて接続してもよい。
【0027】
このような蓋体5は、半導体素子3や電子部品4の保護とともに電磁シールドの目的で多層配線基板1に取着されるものであり、例えば洋白・鉄・SUS等の材料が用いられ、その表面にはNiやSn・半田等のメッキを施すことで半田濡れ性を向上させることができる。また、蓋体5は、例えば金型を用いて所望の寸法に加工することにより形成される。
【0028】
なお、蓋体5には多層配線基板1との位置合わせを行なうためのべろ部5bを設けておき、これを多層配線基板1の側面に設けたべろ部挿入孔やべろ部挿入溝(図示せず)に挿入することにより、正確に位置合わせして取着させることができる。
【0029】
また、突出部5aは、熱伝導層2の蓋体当接部2bに当接させて半導体素子3からの熱を十分に伝導し蓋体5から放散させることができる形状および寸法とすればよく、また、蓋体当接部2bとの当接部を半田付けすることにより多層配線基板1との接着強度が満足できるような形状および寸法として形成すればよい。
【0030】
このような突出部5aは、例えば蓋体5を加工するための金型に突出部5aとなる部分を設けたり、あるいはパンチ加工等により蓋体5を加工して凹部として形成することにより所望の形状・位置・寸法に形成される。
【0031】
このように、本発明の電子回路モジュールによれば、多層配線基板1の上面において半導体素子3が搭載された熱伝導層2の蓋体当接部2bに蓋体5の突出部5aを当接させていることから、半導体素子3で発生した熱は熱伝導層2を経て突出部5aから蓋体5に効率よく伝導していき、蓋体5から大気中あるいは蓋体5に取着された放熱用部材(図示せず)に放散されることとなる。
【0032】
また、熱伝導層2は多層の絶縁層の最上層と一体化するようにして多層配線基板1の上面に形成され、従来のサーマルビアホールのように多層配線基板1の内部を貫通していないため、熱伝導層2の下部においても多層配線基板1の内部の回路配線を自由に引き回すことができ、内部の回路配線層を特に制約なしに配置して多層配線基板1の高密度化・小型化を図ることができる。
【0033】
さらに、熱伝導層2の蓋体当接部2bに蓋体5の突出部5aを当接させるだけでも半導体素子3からの発熱を効果的に伝導させて放散させることができ、突出部5aを蓋体当接部2bに半田等の良熱伝導性の接着剤により接着する場合であっても、突出部5aはそれら接着剤に対する濡れ性が良好なため余分な接着剤は突出部5aの側面に吸い上げられることとなり、蓋体5の自重を利用して突出部5aを蓋体当接部2bに密着させて接合することができるので、蓋体5の高さのばらつき、つまり製品高さのばらつきを低減することもできる。
【0034】
また、熱伝導層2は多層配線基板1の製造工程において一体的に形成することができ、多層配線基板1に対して別途放熱部材を搭載する必要がないため、電子回路モジュールの低コスト化を図ることもできる。
【0035】
なお、本発明は以上の実施の形態の例に限定されるものではなく、本発明の要旨を逸脱しない範囲で種々の変更・改良を施すことは何ら差し支えない。
【0036】
【発明の効果】
本発明の電子回路モジュールによれば、多層配線基板の上面に半導体素子搭載部および蓋体当接部を有する熱伝導層を多層配線基板の絶縁層の最上層の1層分以上の厚みで形成し、半導体素子を半導体素子搭載部に搭載するとともに、熱伝導材料から成る蓋体の内側に突出部を形成して、この突出部を蓋体当接部に当接させて蓋体を多層配線基板に取着していることから、半導体素子の発熱を熱伝導層と突出部とを介して蓋体に効率よく伝えて放散させることが可能となる。
【0037】
また、多層配線基板における放熱部材である熱伝導層が多層配線基板の上面に多層配線基板の絶縁層の最上層の1層分以上の厚みで形成されており、基板を貫通していないため、熱伝導層の下部においても多層配線基板の内部における回路配線層を特に制約無しに配置させることが可能となり、従来のサーマルビアホールを用いたものに比べて高密度で小型の電子回路モジュールとなる。
【0038】
以上により、本発明によれば、安価な多層回路基板を用いて内部の回路配線を任意に配置することができるとともに半導体素子からの発熱を効率よく放熱することができ、高密度化・小型化・低コスト化の要求に対応可能な高信頼性の電子回路モジュールを提供することができた。
【図面の簡単な説明】
【図1】本発明の電子回路モジュールの実施の形態の一例を示す、蓋体を除いた状態の上面図である。
【図2】本発明の電子回路モジュールの実施の形態の一例を示す、蓋体を取着した状態における図1のA−A’線断面図である。
【符号の説明】
1・・・・・多層配線基板
2・・・・・熱伝導層
2a・・・・半導体素子搭載部
2b・・・・蓋体当接部
3・・・・・半導体素子
5・・・・・蓋体
5a・・・・突出部
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electronic circuit module which is used for an important part of various electronic devices and electronic devices and which covers a semiconductor element mounted on a substrate with a lid such as a metal case. The present invention relates to an electronic circuit module used for the structure.
[0002]
[Prior art]
The demand for downsizing, thinning, high functionality, low cost, etc. is not constant for recent electronic devices and electronic devices, and electronic devices and electronic devices are configured in order to fulfill those requirements. Similarly, electronic circuit modules, which are semiconductor devices, are rapidly being studied for downsizing, thinning, high functionality, and cost reduction.
[0003]
Such an electronic circuit module generally includes an electronic component or semiconductor element mounted on a substrate constituting the circuit board to form an electronic circuit, and further, the electronic component or semiconductor element is used for protecting the electronic circuit or electromagnetic shielding. It is comprised by attaching a metal case so that it may cover.
[0004]
The substrate constituting the electronic circuit module includes, for example, a ceramic material mainly composed of an aluminum oxide sintered body, a highly thermally conductive ceramic material mainly composed of an aluminum nitride sintered body, or a glass material and an organic material. The glass epoxy which consists of materials, or the glass ceramics etc. which can be fired at a low temperature compared with a ceramic material are used. With respect to these substrate materials, in the electronic circuit module, each substrate material is properly used as follows depending on the application.
[0005]
For example, a ceramic material whose main component is an aluminum oxide sintered body is an insulating material with high stability and reliability, but it must be fired at a high temperature of about 1400 to 1650 ° C. It is necessary to use tungsten, molybdenum, or the like, which is a high melting point metal, and since these high melting point metals are high specific resistance metal materials, it is difficult to apply them to electronic circuit modules that perform high-speed signal processing.
[0006]
In addition, a high thermal conductivity ceramic material mainly composed of an aluminum nitride sintered body is effective in terms of good heat dissipation, but is expensive for general consumer electronic circuit modules. It is difficult to reduce the cost.
[0007]
Glass epoxy composed of a glass material and an organic material is inexpensive but has insufficient heat resistance, and is not suitable for an electronic circuit module that requires thermal stability.
[0008]
In contrast, glass ceramics that can be fired at a low temperature and in a short time compared to ceramic materials can be produced at a low cost, and Au, Ag, Cu, and the like, which are low melting point metal materials, can be used for the material of the wiring conductor Therefore, it is advantageous for an electronic circuit module that performs high-speed signal processing.
[0009]
In addition, these substrate materials are properly used depending on the application. In response to the recent enhancement of functionality of electronic circuit modules, semiconductor devices can be directly mounted to achieve miniaturization. An important issue is how to dissipate the heat generated by the semiconductor elements accompanying the process. As a heat dissipation countermeasure, for example, a method in which a semiconductor element is directly mounted on a substrate made of a high thermal conductivity material, or a heat dissipation member called a thermal via hole is formed through a substrate directly below the semiconductor element. The method etc. are mentioned.
[0010]
On the other hand, as for the electrical connection method in mounting a semiconductor element, a so-called flip chip mounting method using metal bumps or the like has been put into practical use instead of the conventional wire bonding in order to reduce the mounting area.
[0011]
In addition, from the viewpoint of miniaturization of the substrate, instead of mounting a semiconductor element on the front side of the substrate, a chip is mounted on the surface of the substrate by embedding and mounting the semiconductor element by providing a cavity on the back side of the substrate. By making effective use of an increased area, further downsizing is possible.
[0012]
[Problems to be solved by the invention]
However, there is an increasing demand for electronic circuit modules that achieve both smaller size and lower cost, and in order to ensure the reliability of semiconductor elements, there is a need for electronic circuit modules that are higher than conventional ones. Good heat dissipation is required.
[0013]
Such heat dissipation is ensured by, for example, installing a heat-dissipating through conductor called a thermal via hole from the bottom of a cavity provided on the back side of the substrate and penetrating the surface of the substrate, and forming the metal on the surface of the substrate. This can be achieved by connecting to the electrode part and attaching a heat radiating member made of metal or the like to the metal electrode part by soldering. Furthermore, further heat dissipation can be achieved by bringing the metal heat radiating member into close contact with a case (lid) of an electronic circuit module made of a metal having good heat dissipation.
[0014]
However, since the thermal via hole is formed through the substrate to transmit heat from the semiconductor element and dissipate it, the circuit wiring inside the multilayer wiring board can be arbitrarily set at the portion where the thermal via hole penetrates the substrate. Electronic circuit modules such as, for example, circuit wiring that is inner layer must be arranged avoiding thermal via holes, leading to longer circuit wiring and increased electrical loss. There was a problem that it was greatly restricted in terms of downsizing.
[0015]
Furthermore, it is necessary to prepare an additional heat radiating member, and at the same time, the height of the heat radiating member in connection with the case determines the height of the case, that is, the product height. Since it is difficult to control the amount of solder and the thickness of the solder in soldering for attachment, there is a problem that the variation in product height becomes large.
[0016]
The present invention has been devised in view of the above-described problems of the prior art, and an object of the present invention is to arbitrarily arrange internal circuit wiring using an inexpensive multilayer circuit board and to generate heat from a semiconductor element. It is an object of the present invention to provide a highly reliable electronic circuit module that can efficiently dissipate heat and can meet demands for higher density, smaller size, and lower cost.
[0017]
[Means for Solving the Problems]
In the electronic circuit module of the present invention, the heat conductive layer having the semiconductor element mounting portion and the lid contact portion is formed on the upper surface of the multilayer wiring board with a thickness of one layer or more of the uppermost layer of the insulating layer of the multilayer wiring board. The semiconductor element is mounted on the semiconductor element mounting portion, and a lid body made of a heat conductive material and having a protruding portion on the inside is attached by bringing the protruding portion into contact with the lid contacting portion. It is characterized by being.
[0018]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an electronic circuit module of the present invention will be described in detail with reference to the drawings.
[0019]
FIG. 1 is a top view of an electronic circuit module according to an embodiment of the present invention with a cover removed, and FIG. 2 is a cross-sectional view taken along line AA ′ in FIG. It is sectional drawing.
[0020]
In these drawings, reference numeral 1 denotes a multilayer wiring board that is a substrate body of an electronic circuit module, and the circuit board is constituted by a plurality of insulating layers, circuit wiring layers, through conductors, and the like. The multilayer wiring board 1 may be a substrate made of various materials such as a ceramic multilayer wiring board or a glass ceramic multilayer wiring board or a glass epoxy board.
[0021]
Reference numeral 2 denotes a heat conductive layer formed on the upper surface of the multilayer wiring substrate 1, and the heat conductive layer 2 has a semiconductor element mounting portion 2 a and a lid contact portion 2 b on the upper surface of the multilayer wiring substrate 1. For such a heat conductive layer 2, a heat transfer material having a good heat conductivity such as a metal material similar to a via conductor for ensuring electrical continuity between the insulating layers of the multilayer wiring board 1 is used. Can do. For example, in the case of forming using a conductor paste in the same manner as a via conductor, a paste prepared with a metal powder such as Ag, Au, Cu and an organic binder may be used, and the insulating layer of the multilayer wiring board 1 is configured. What is necessary is just to form the heat conductive layer 2 of a desired shape and a dimension by printing on the recessed part formed in the ceramic green sheet to fill, baking it, etc.
[0022]
As the dimension of the heat conductive layer 2, the thickness may be, for example, one uppermost layer of the insulating layer of the multilayer wiring board 1, but it is advantageous in terms of heat conductivity if the thickness is several layers. Become. Moreover, the area should just have the area which can ensure the semiconductor element mounting part 2a which mounts the semiconductor element 3, and the cover body contact part 2b which contact | abuts the protrusion part 5a of the cover body 5 mentioned later. Consider enough heat to escape.
[0023]
Reference numeral 3 denotes a semiconductor element, which is mounted on the semiconductor element mounting portion 2a by being bonded with an adhesive material having good thermal conductivity such as AuSn brazing, AuSi brazing, or thermosetting Ag paste. Are electrically connected by wire bonding or the like, and heat generated by the operation is transmitted to the heat conductive layer 2. Further, the semiconductor element 3 is sealed with a sealing resin such as an epoxy resin or a silicone resin for sealing the semiconductor element for the purpose of protecting the element and the bonding wire after mounting.
[0024]
Further, an insulating resin having a good thermal conductivity, so-called under, is connected between the lower surface of the semiconductor element 3 and the multilayer wiring board 1 (semiconductor element mounting portion 2a) by a metal bump by a so-called flip-chip mounting method. Fill may be injected to improve the heat conduction of the semiconductor element 3 to the heat conductive layer 2.
[0025]
Reference numeral 4 denotes various electronic components that are mounted on and mounted on the upper surface of the multilayer wiring board 1 together with the semiconductor element 3, such as a chip capacitor, a chip resistor, and a chip inductor.
[0026]
Reference numeral 5 denotes a lid made of a heat conductive material, which is attached to the multilayer wiring board 1 so as to cover the upper surface thereof, and protects the semiconductor element 3 and the electronic component 4 mounted on the board 1 by accommodating them inside the container. It is. Further, the lid 5 has a protruding portion 5 a on the inner side, and this protruding portion 5 a is brought into contact with the lid contacting portion 2 b of the heat conductive layer 2. The protrusion 5a and the lid contact part 2b may be connected using a belt-type reflow furnace or the like using solder or the like in order to increase thermal conductivity.
[0027]
Such a lid 5 is attached to the multilayer wiring board 1 for the purpose of electromagnetic shielding as well as protection of the semiconductor element 3 and the electronic component 4. For example, materials such as white, iron, and SUS are used. The surface can be plated with Ni, Sn, solder, etc. to improve solder wettability. The lid 5 is formed by processing to a desired dimension using a mold, for example.
[0028]
The lid 5 is provided with a flange portion 5b for alignment with the multilayer wiring board 1, and this is provided with a flange portion insertion hole or a groove portion insertion groove (not shown) provided on the side surface of the multilayer wiring substrate 1. ) Can be accurately aligned and attached.
[0029]
Further, the protruding portion 5a may be shaped and dimensioned so as to be brought into contact with the lid contact portion 2b of the heat conducting layer 2 so that the heat from the semiconductor element 3 can be sufficiently conducted and dissipated from the lid 5. Further, the contact portion with the lid contact portion 2b may be soldered so as to have a shape and size that can satisfy the adhesive strength with the multilayer wiring board 1.
[0030]
Such a protruding portion 5a is formed by forming a portion that becomes the protruding portion 5a on a mold for processing the lid 5, or by processing the lid 5 by punching or the like to form a concave portion. Formed in shape, position and dimensions.
[0031]
Thus, according to the electronic circuit module of the present invention, the protrusion 5a of the lid 5 is brought into contact with the lid abutment 2b of the heat conductive layer 2 on which the semiconductor element 3 is mounted on the upper surface of the multilayer wiring board 1. Therefore, the heat generated in the semiconductor element 3 is efficiently conducted from the protruding portion 5a to the lid body 5 through the heat conductive layer 2, and is attached to the lid 5 from the lid 5 in the atmosphere. It is dissipated to a heat radiating member (not shown).
[0032]
Further, the heat conductive layer 2 is formed on the upper surface of the multilayer wiring board 1 so as to be integrated with the uppermost layer of the multilayer insulating layer, and does not penetrate through the inside of the multilayer wiring board 1 unlike the conventional thermal via hole. The circuit wiring inside the multilayer wiring board 1 can be freely routed even below the heat conductive layer 2, and the inner circuit wiring layer can be arranged without any restriction to increase the density and miniaturization of the multilayer wiring board 1. Can be achieved.
[0033]
Furthermore, the heat generated from the semiconductor element 3 can be effectively conducted and dissipated by merely bringing the protrusion 5a of the lid 5 into contact with the lid contact part 2b of the heat conductive layer 2, and the protrusion 5a can be dissipated. Even when the lid abutting portion 2b is bonded with a good heat conductive adhesive such as solder, the protruding portion 5a has good wettability with respect to the adhesive, so that the extra adhesive is on the side surface of the protruding portion 5a. Since the projecting portion 5a can be brought into close contact with the lid contact portion 2b using the dead weight of the lid 5, the height variation of the lid 5, that is, the height of the product can be increased. Variations can also be reduced.
[0034]
Further, since the heat conductive layer 2 can be integrally formed in the manufacturing process of the multilayer wiring board 1, and it is not necessary to separately mount a heat dissipation member on the multilayer wiring board 1, the cost of the electronic circuit module can be reduced. You can also plan.
[0035]
It should be noted that the present invention is not limited to the above-described embodiments, and various modifications and improvements can be made without departing from the scope of the present invention.
[0036]
【The invention's effect】
According to the electronic circuit module of the present invention, the heat conductive layer having the semiconductor element mounting portion and the lid contact portion on the upper surface of the multilayer wiring board is formed with a thickness of one layer or more of the uppermost layer of the insulating layer of the multilayer wiring board. The semiconductor element is mounted on the semiconductor element mounting portion, and a protrusion is formed on the inner side of the cover made of a heat conductive material, and the protrusion is brought into contact with the cover contact portion to connect the cover to the multilayer wiring. Since it is attached to the substrate, it is possible to efficiently transmit and dissipate the heat generated by the semiconductor element to the lid through the heat conductive layer and the protruding portion.
[0037]
In addition, since the heat conduction layer which is a heat dissipation member in the multilayer wiring board is formed on the upper surface of the multilayer wiring board with a thickness of one layer or more of the uppermost layer of the insulating layer of the multilayer wiring board and does not penetrate the board, Even in the lower part of the heat conductive layer, it is possible to arrange the circuit wiring layer inside the multilayer wiring board without any particular restriction, and the electronic circuit module becomes denser and smaller than those using conventional thermal via holes.
[0038]
As described above, according to the present invention, the internal circuit wiring can be arbitrarily arranged using an inexpensive multilayer circuit board, and the heat generated from the semiconductor element can be efficiently radiated, and the density and size can be reduced.・ We were able to provide a highly reliable electronic circuit module that can meet the demand for lower costs.
[Brief description of the drawings]
FIG. 1 is a top view showing an example of an embodiment of an electronic circuit module of the present invention with a lid removed.
2 is a cross-sectional view taken along the line AA ′ of FIG. 1 in a state where a lid is attached, showing an example of an embodiment of the electronic circuit module of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Multi-layer wiring board 2 ... Thermal conductive layer 2a ... Semiconductor element mounting part 2b ... Cover body contact part 3 ... Semiconductor element 5 ... -Lid 5a ... Projection

Claims (1)

多層配線基板の上面に、半導体素子搭載部および蓋体当接部を有する熱伝導層が前記多層配線基板の絶縁層の最上層の1層分以上の厚みで形成され、半導体素子が前記半導体素子搭載部に搭載されるとともに、熱伝導材料から成り、内側に突出部を有する蓋体が前記突出部を前記蓋体当接部に当接させて取着されていることを特徴とする電子回路モジュール。A heat conductive layer having a semiconductor element mounting portion and a lid contact portion is formed on the upper surface of the multilayer wiring board with a thickness of one layer or more of the uppermost layer of the insulating layer of the multilayer wiring board. An electronic circuit mounted on a mounting portion and made of a heat conductive material, and having a lid having a protruding portion on the inside thereof, the mounting portion being attached to the lid contacting portion module.
JP36697498A 1998-12-24 1998-12-24 Electronic circuit module Expired - Fee Related JP3660817B2 (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
JP36697498A JP3660817B2 (en) 1998-12-24 1998-12-24 Electronic circuit module

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JP3660817B2 true JP3660817B2 (en) 2005-06-15

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001008221A1 (en) * 1999-07-26 2001-02-01 Tdk Corporation High frequency module
DE10038092A1 (en) * 2000-08-04 2002-02-14 Bosch Gmbh Robert Method for the electrical connection of a semiconductor component to an electrical assembly
JP4720162B2 (en) * 2004-12-02 2011-07-13 株式会社村田製作所 Electronic component equipment
JP5611724B2 (en) * 2010-08-26 2014-10-22 株式会社日立国際電気 Circuit board equipment

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