JP3656956B2 - Quartz glass, quartz glass jig and manufacturing method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a quartz glass and a quartz glass jig that are used in semiconductor manufacturing and have excellent plasma corrosion resistance, and a method for manufacturing the same.
[0002]
[Related technologies]
In the manufacture of semiconductors, for example, the manufacture of semiconductor wafers, the processing efficiency is improved by using a plasma reactor in an etching process or the like as the diameter increases in recent years. For example, in a semiconductor wafer etching process, an etching process using a plasma gas, for example, a fluorine (F) plasma gas is performed.
[0003]
However, when conventional quartz glass is placed in, for example, an F-based plasma gas atmosphere, SiO ₂ and F-based plasma gas react on the quartz glass surface to produce SiF ₄ , which has a boiling point of −86 ° C. Therefore, it sublimated easily, and quartz glass was corroded in large quantities, resulting in thinning and surface roughness, and was not suitable for use as a jig in an F-based plasma gas atmosphere.
[0004]
As described above, the conventional quartz glass has a large problem in the corrosion resistance, that is, the plasma corrosion resistance, with respect to the plasma reaction in the semiconductor manufacturing, particularly the etching process using the F-based plasma gas. Therefore, a proposal for improving the plasma corrosion resistance by coating the surface of a quartz glass member with aluminum or an aluminum compound (JP-A-9-95777, JP-A-9-95777, JP-A-10-139480) or quartz glass There has been proposed a plasma corrosion-resistant glass whose plasma corrosion resistance is improved by incorporating aluminum (Japanese Patent Laid-Open No. 11-228172).
[0005]
[Problems to be solved by the invention]
The present inventor has been carrying out various studies to further improve the plasma corrosion resistance of quartz glass. As part of this, quartz glass powder in which 5 wt% of alumina powder is mixed with quartz glass is heated and melted under vacuum to produce quartz glass. The plasma corrosion resistance was investigated. Then, the etching rate was reduced by 40% to 50% as compared with the quartz glass member which was not doped at all.
[0006]
However, micro bubbles are observed inside and on the surface of the quartz glass body, and in particular, the difference between the corroded portion and the non-corroded portion is increased in the surface portion, the surface roughness increases, and a minute crystal portion is generated, resulting in time. At the same time, peeling occurred frequently from the portion, and with the formation of micro-dents, the generation of particles increased and adhered to the wafer surface, resulting in increased wafer defects. In addition, since these bubbles and dents promote etching, even when the concentration of the doped metal is increased, the etching corrosion resistance is not relatively improved.
[0007]
Because in F-based boiling point 1290 ° C. of AlF ₃ that reacts with the plasma gas, since it is much hotter than the SiF _4, while the SiF ₄ portion is a large amount of corrosion, AlF ₃ portion surface This is presumed to be due to the fact that the difference in etching amount has increased due to less sublimation. In addition, when the doped aluminum is locally concentrated, the energy state is clearly different from the adjacent SiO ₂ part, so the balance is lost and the SiO ₂ is more easily transformed into a low energy crystalline state than there. .
[0008]
This crystal portion is visually confirmed as a fine white foreign substance. Since the formed crystal part has a thermal expansion degree different from that of quartz glass, it easily peels off due to a temperature change. Furthermore, locally concentrated metal element, in itself, since the boiling point is lower than SiO _2, at the time of melting heat of the SiO ₂ to form the foam is a gas. The bubble portion in the vicinity of the surface is easily ruptured by temperature change. All of the above-mentioned causes of particle generation. Further, since the bubbles and the concave portions are likely to increase the etching rate due to the concentration of the plasma gas, the etching amount of the entire quartz glass also increases, and the usable time decreases.
[0009]
The present invention has been made on the basis of the above-described knowledge. As a jig for plasma reaction used in semiconductor manufacturing, quartz glass and a quartz glass jig excellent in plasma corrosion resistance, particularly corrosion resistance against F-based plasma gas, and those It aims at providing the manufacturing method of.
[0010]
In order to solve the above problems, the quartz glass of the present invention is at least one selected from the group consisting of a first metal element which is one type of Group 3B of the periodic table and Zr, Y, lanthanoids and actinoids. 2 to 2 wt% of the second metal element and 0.1 to 20 wt% in combination, and the Bernoulli method is used to mix the two or more metal element powders or their compound powder into the quartz powder. The quartz glass ingot is produced by heating and melting and dropping to heat the surface temperature of the quartz glass ingot to 1800 ° C. or higher .
[0011]
The first and second metal elements contained in the quartz glass of the present invention have a higher boiling point when they are fluoride than Si, and are not etched. For example, the boiling point of SmF is 2427 ° C.
[0012]
However, when these metal elements are contained alone, the quartz glass body becomes cloudy or generates a large amount of bubbles and foreign matters even if it becomes transparent. Cloudy, each metal element is quartz glass body during, and SiO ₂ present as lumps of different oxides refractive index is caused by scattering light at the interface between SiO _2, also it bubbles and foreign substances, The cause is that the oxide becomes a large mass and is unevenly distributed.
[0013]
Among these metal elements, the second metal elements such as Zr, Y, lanthanoids, and actinoids tend to be positive oxides and become oxides in the quartz glass body, and light scattering is also strong.
[0014]
Therefore, when the second metal element is contained together with Al as the first metal element, not alone, the Al is incorporated into the quartz network to generate a negative charge, and the second metal holding a positive charge. They attract each other and relax each other's electric charge, and the metal element is suppressed from becoming an oxide and solidifying. As the first metal element which is likely to have a negative charge like Al, a metal element belonging to Group 3B in the periodic table can be selected. However, Al is an element which is not particularly problematic in the semiconductor manufacturing process and is most preferable as the first metal element. . Further, Nd or Sm is suitable as the second metal element.
[0015]
The total concentration of the above metal elements is 0.1 to 20 wt%. However, if it is 0.1 wt% or less, there is no improvement in etching resistance, and if it is 20 wt% or more, bubbles are often generated and used as a glass body. Can not.
[0016]
The blend ratio of the first metal element (M1) and the sum of one or more of the second metal elements (M2) is (M1) / (M2) = 0.1 to 10 in weight ratio. It is preferable to do this. When the blending ratio is less than 0.1, the above-described relaxation effect is not achieved, and when it exceeds 10, bubbles and foreign matters are frequently generated in the transparent glass body. Nd or Sm is preferable as the second metal element.
[0017]
In the quartz glass of the present invention, it is preferable that the content of bubbles and foreign matters is less than 100 mm ² in projected area per 100 cm ^{3 and} the internal transmittance of visible light is 50% / cm or more.
[0018]
The first aspect of the method for manufacturing a silica glass of the present invention, per to create an excellent quartz glass ingot into a plasma corrosion resistance from quartz powder by the Verneuil method, two or more kinds of metal elements powder or their compounds powder, quartz powder The quartz glass ingot is heated and melted and dropped to produce a quartz glass ingot, and the surface temperature of the quartz glass ingot is heated to 1800 ° C. or higher. At least selected from the group consisting of Zr, Y, lanthanoids and actinoids, the first metal element containing 0.1-20 wt% of the elements together and the metal element is one of Group 3B of the periodic table It consists of the 2nd metal element which is 1 type .
[0019]
A second aspect of the method for manufacturing a silica glass of the present invention, per to create an excellent quartz glass ingot into a plasma corrosion resistance from quartz powder by the Verneuil method, creating a quartz glass ingot by heating and melting drop the silica powder at the same time, 2 A method for producing quartz glass in which a solution prepared by dissolving at least two kinds of metal elements or their compounds in pure water, an acidic solution, a basic solution or an organic solvent is continuously dropped onto the growth surface of the quartz glass ingot. The quartz glass ingot contains 0.1 to 20 wt% of the two or more metal elements in combination, and the metal element is a first metal element of Group 3B of the periodic table; , Y, a lanthanoid, and an actinoid, at least one second metal element selected from the group consisting of actinides .
[0020]
In the third aspect of the method for producing quartz glass of the present invention, the overall particle size distribution is in the range of 0.01 to 1000 μm, and the weight ratio of the particles in the range of 0.01 to 5 μm is 1 ˜50 wt% of quartz glass powder and at least two kinds of metal elements or their compounds that can be dissolved in pure water, acidic solution, basic solution or organic solvent, pure water, acidic solution, basic solution or organic A method for producing a quartz glass ingot by mixing and dissolving in a solvent to prepare a slurry, and drying and individualizing the slurry, followed by heating and melting under vacuum, wherein the quartz glass ingot comprises: A first metal element containing 0.1 to 20 wt% of two or more metal elements in combination, the metal element being one type of Group 3B of the periodic table, Zr, Y, lanthanoid and actinoy It consists of the 2nd metal element which is at least 1 type chosen from the group which consists of 2nd . The metal compound in this method is preferably a nitric acid compound and pure as the solvent. This method is generally referred to as a slip casting method.
[0021]
As a conventional method for producing quartz glass, a method in which quartz powder and a metal compound are mixed and heated and melted in a vacuum atmosphere is generally used. However, in such a method, the pressure distribution differs between the outer periphery of the molded body and the inside. , Quality variations and bubbles, foreign materials, and granular structures were likely to occur inside.
[0022]
The above problem does not occur in the Bernoulli method in which particles are melted and deposited while applying uniform thermal energy to each particle, or in the slip casting method in which uniform dispersion is possible in advance by solution mixing. These will be described in detail in Examples described later.
[0023]
The quartz glass jig of the present invention is made of the quartz glass of the present invention, and has a metal element-containing layer having a thickness from the surface to a predetermined depth and containing 0.1 to 20 wt% of the metal element. It is characterized by. The thickness of the metal element-containing layer is preferably at least 5 mm.
[0024]
The method for producing a quartz glass jig of the present invention comprises pure water, an acidic solution, a basic solution, or an organic solution containing at least two kinds of metal elements that can be dissolved in pure water, an acidic solution, a basic solution, or an organic solvent. A method for producing a quartz glass jig in which a solution prepared by mixing and dissolving in a solvent is applied to a surface of a prepared quartz glass jig, and then the surface is heated and melted. A quartz glass ingot, which is a material of the above, contains 0.1 to 20 wt% of two or more kinds of metal elements, and the metal element is one kind of Group 3B of the periodic table, Zr, It is characterized by comprising at least one second metal element selected from the group consisting of Y, lanthanoid and actinoid .
[0025]
In this method, as the solution containing a metal element, an organometallic compound solution containing at least two kinds of metal elements or a solution prepared by dissolving it in an organic solvent is used.
[0026]
In the quartz glass jig and the manufacturing method thereof according to the present invention, the problem of white turbidity of the quartz glass body and generation of bubbles and foreign matters due to the inclusion of the metal element described above can be uniformly applied to the surface by applying as a metal solution from the outside. This was solved by adhering a metal element to the surface and further heat-melting the surface to uniformly diffuse it to a predetermined depth from the surface, preferably about 5 mm, and to make it uniformly contained. Since the depth to which the quartz member is etched by the etching process is 1 to 2 mm, a sufficient effect can be obtained if the plasma resistance is improved to a depth of at least about 5 mm.
[0027]
As an aspect of the inclusion of the metal element in the present invention, it may be doped in quartz glass or a quartz glass jig, and / or may be heated and diffused after coating on the surface, and a metal element having a predetermined concentration may be added. Of course, as long as it contains, the aspect is not ask | required.
[0028]
【Example】
Examples of the present invention will be described below, but it is needless to say that these examples are illustrative and should not be construed in a limited manner.
[0029]
(Example 1)
A mixture of 27500 g of quartz particles, 1500 g of Al ₂ O ₃ powder and 1000 g of Sm ₂ O ₃ powder, melted and dropped onto a target ingot rotating at 1 rpm at a speed of 50 g / min in an oxyhydrogen flame, and 200 mmφ × 400 mm quartz Created an ingot. The gas conditions used were H ₂ of 300 l / min and O ₂ of 100 l / min. The prepared ingot was set in a heat treatment furnace, held at 1800 ° C. for 1 HR under a pressure of 1 kg / cm ² in an N ₂ atmosphere, and molded into 400 mmφ × 100 mm.
[0030]
A disc-shaped plate material of 350 mmφ × 20 mm (thickness) was cut out from the obtained glass molded body, and the upper and lower surfaces were ground. The Ra value on the surface was 3.0 μm, and the OH concentration of the disk was 300 ppm. The content of bubbles and foreign matters in the glass body was 20 mm ² in a projected area per 100 cm ³ , and the internal transmittance of visible light was 80% / cm.
[0031]
Further, when the qualitative and quantitative determination of the released gas was performed in the temperature range from room temperature to 1000 ° C. with a sample cut out from the same molded body, the total amount of CO, H ₂ O, O ₂ , and H ₂ gases was 0.4 mol / m ³ occurred.
[0032]
Similarly, the Al and Sm concentrations of the sample cut out were measured by fluorescent X-ray analysis and found to be 2.5 wt% and 2.3 wt%, respectively. Similarly, a sample cut to 30 mmφ × 3 mm and ground to a surface roughness of Ra 3.0 μm was subjected to an etching test of 30 mtorr, 1 kw, and 10 HR in a plasma gas of 50 sccm and CF ₄ + O ₂ (20%). The etching rate was calculated from the mass change before and after the test, and a result of 30 nm / min was obtained.
[0033]
As for the amount of particles generated, after etching, an Si wafer of the same area is placed on the plasma irradiation surface of the sample, the unevenness of the contact surface of the wafer is detected by laser scattering, and the number of particles of 0.3 μm or more is detected by a particle counter Was measured. The number of particles was 10.
[0034]
(Example 2)
A slurry is prepared by mixing 6750 g of quartz particles having a particle size of 100 to 500 μm, 1800 g of pyrolytic silica particles having a particle size of 0.01 to 4 μm, 5100 g of aluminum nitrate, 1200 g of samarium nitrate, and 13500 g of pure water. The slurry was dried in an atmosphere of 40 ° C. for 8 days to form a solid, and then kept at 500 ° C. in an atmospheric furnace to burn off organic substances. In a vacuum atmosphere, heat treatment was performed at 1800 ° C. and 1 HR, 380 mmφ × 25 mm A transparent glass body was obtained.
[0035]
A disc of 350 mmφ × 20 mm (thickness) was cut out from the obtained glass body, and the upper and lower surfaces were ground. The Ra value on the surface was 3.0 μm, and the OH concentration of the disk was 300 ppm. Similarly, the Al and Sm concentrations of the sample cut out were measured by fluorescent X-ray analysis and found to be 2.5 wt% and 2.3 wt%, respectively. The other results were the same as in Example 1.
[0036]
(Comparative Example 1)
30000 g of quartz particles having a particle size of 100 to 500 μm were mixed, filled in a carbon mold, and subjected to heat treatment at 1800 ° C. and 1 HR in a vacuum atmosphere to produce a transparent glass body of 400 mmφ × 100 mm. When the Al concentration of the cut sample was measured by fluorescent X-ray analysis, it was 0.0 wt%. Moreover, when the same sample as Example 1 was created and the plasma etching test was done, the etching rate was 120 nm / min. The other evaluation results were the same as in Example 1.
[0037]
(Comparative Example 2)
29000 g of quartz particles and 1000 g of Sm ₂ O ₃ powder were mixed and melted and dropped onto a target ingot rotating at 1 rpm in an oxyhydrogen flame at a speed of 50 g / min to prepare a 200 mmφ × 400 mm quartz ingot. The gas conditions used were H ₂ of 300 l / min and O ₂ of 100 l / min. The prepared ingot was set in a heat treatment furnace, held at 1800 ° C. for 1 HR under a pressure of 1 kg in an N ₂ atmosphere, and molded into 400 mmφ × 100 mm.
[0038]
The obtained glass molded product was clouded as a whole, and the visible light transmittance was 0% / cm. From there, a 350 mmφ × 20 mm (thickness) disk was cut out and the upper and lower surfaces were ground. The Ra value on the surface was 3.0 μm, and the OH concentration of the disk was 300 ppm. When the Sm concentration was measured by fluorescent X-ray analysis, it was 2.5 wt%.
[0039]
Further, when the qualitative and quantitative determination of the released gas was performed in the temperature range from room temperature to 1000 ° C. with a sample cut out from the same molded body, the total amount of CO, H ₂ O, O ₂ , and H ₂ gases was 0.4 mol / m ³ occurred.
[0040]
Similarly, the sample cut out was cut into 30 mmφ × 3 mm, and the surface roughness was ground to Ra 3.0 μm. In a plasma gas of 50 sccm, CF ₄ + O ₂ (20%), 30 mtorr, 1 kw, 10 HR An etching test was performed. The etching rate was calculated from the mass change before and after the test, and a result of 50 nm / min was obtained.
[0041]
As for the amount of particles generated, after etching, an Si wafer of the same area is placed on the plasma irradiation surface of the sample, the unevenness of the contact surface of the wafer is detected by laser scattering, and the number of particles of 0.3 μm or more is detected by a particle counter Was measured. The number of particles was 100.
[0042]
(Comparative Example 3)
A slurry is prepared by mixing 6750 g of quartz particles having a particle diameter of 100 to 500 μm, 1800 g of pyrolytic silica particles having a particle diameter of 0.01 to 4 μm, 1000 g of samarium nitrate, and 7500 g of pure water. The slurry is dried in a 40 ° C. atmosphere for 8 days to form a solid, and then held in an atmospheric furnace at 500 ° C. to burn off organic substances. In a vacuum atmosphere, heat treatment is performed at 1800 ° C. and 1 HR, 380 mmφ × 25 mm A glass body was obtained.
[0043]
The obtained glass molded product was clouded as a whole, and the internal transmittance of visible light was 0% / cm. A disc of 350 mmφ × 20 mm (thickness) was cut out from the obtained glass body, and the upper and lower surfaces were ground. The Ra value on the surface was 3.0 μm, and the OH concentration of the disk was 300 ppm. Similarly, when the Sm concentration of the sample cut out was measured by fluorescent X-ray analysis, it was 2.1 wt%. Others were the same as those in Comparative Example 2.
[0044]
(Comparative Example 4)
A glass body was prepared in the same manner as in Comparative Example 2 by mixing 17000 g of quartz particles having a particle size of 100 to 500 μm, 10,000 g of Al ₂ O ₃ powder and 3000 g of Sm ₂ O ₃ powder. The glass body became cloudy and the internal transmittance of visible light was 0% / cm. When the Al and Sm concentrations of the cut sample were measured by fluorescent X-ray analysis, they were 15.0 wt% and 7.0 wt%, respectively. Moreover, when the same sample as Example 1 was produced and the same evaluation was performed, although the etching rate was 40 nm / min, generation | occurrence | production of the particle reached to 800 pieces.
[0045]
(Example 3)
On the surface of a quartz glass jig of 400 mmφ × 20 mm (thickness), 15 wt% of aluminum nitrate and samarium nitrate are dissolved, and a solution having a total dissolution amount of 30 wt% is applied. It was melted by heating with a flame to form a smooth transparent melt surface. The Ra value on the surface was 0.1 μm, and the OH concentration of the jig was 300 ppm. The content of bubbles and foreign matters in the jig was less than 20 mm ^{2 in} a projected area per 100 cm ³ , and the visible light internal transmittance was 80% / cm.
[0046]
Further, when the qualitative and quantitative determination of the released gas was performed in the temperature range from room temperature to 1000 ° C. of this jig, a total amount of CO, H ₂ O, O ₂ , and H ₂ gases was generated at 0.4 mol / m ³ . . When the Al and Sm concentrations on the jig surface were measured by fluorescent X-ray analysis, they were 3.5 wt% and 3.3 wt%, respectively. A 30 mmφ × 3 mm sample including the surface was cut out, the surface was fire polished to Ra 3.0 μm, and an etching test of 30 mtorr, 1 kw, 10 HR was performed in a plasma gas of 50 sccm and CF ₄ + O ₂ (20%). . The etching rate was calculated from the mass change before and after the test, and a result of 50 nm / min was obtained.
[0047]
As for the amount of particles generated, after etching, an Si wafer of the same area is placed on the plasma irradiation surface of the sample, the unevenness of the contact surface of the wafer is detected by laser scattering, and the number of particles of 0.3 μm or more is detected by a particle counter Was measured. The number of particles was 10.
[0048]
(Comparative Example 5)
The surface of a 400 mmφ × 20 mm (thickness) quartz glass jig was heated and melted with an oxyhydrogen flame to form a smooth transparent molten surface. The Ra value on the surface was 0.1 μm, and the OH concentration of the disk was 300 ppm. When the sample was measured by fluorescent X-ray analysis, nothing was detected. The etching rate was calculated from the mass change before and after the plasma gas test, and a result of 120 nm / min was obtained. Further, the number of generated particles was 60. Other evaluation results were the same as those in Example 3.
[0049]
(Comparative Example 6)
A surface of a quartz glass jig having a diameter of 400 mmφ × 20 mm (thickness) was coated with a solution of 15 wt% samarium nitrate, and the coated surface was heated and melted with an oxyhydrogen flame. A foamy part and a transparent melted part were formed. The Ra value on the surface was 11.0 μm, and the OH concentration was 300 ppm. The surface Sm concentration of the sample was measured by fluorescent X-ray analysis and found to be 7.5 wt%. The number of generated particles was 300. Other evaluation results were the same as those in Example 3.
[0050]
(Comparative Example 7)
On the surface of a quartz glass jig of 400 mmφ × 20 mm (thickness), 15 wt% each of aluminum nitrate and samarium nitrate are dissolved, and a total of 30 wt% solution is applied, and the applied surface is heated by an oxyhydrogen flame. Melted. When this treatment was repeated three times, a cloudy part and a foamy part were formed on the melt surface. The Ra value on the surface was 11.0 μm, and the OH concentration of the disk was 300 ppm. When the Al and Sm concentrations of the sample were measured by fluorescent X-ray analysis, they were 10 wt% and 11 wt%, respectively. The number of generated particles was 300. Other evaluation results were the same as those in Example 1.
[0051]
In each example and comparative example, when the amount of generated particles was 50 or less, the usable portion of the Si wafer was 90% or more, and when it exceeded 200, the yield was reduced to 50% or less. When the etching rate is 100 nm / min or more, the etching depth reaches 0.6 mm in about 100 HR usage time and cannot be used as a member. However, when the etching rate is 50 nm / min or less, the usage time is doubled and the effect is increased. It was confirmed that the economic effect became very large especially at 20 nm / min or less.
[0052]
【The invention's effect】
As described above, the quartz glass and the quartz glass jig of the present invention have an effect of being excellent in plasma corrosion resistance, particularly corrosion resistance against F-based plasma gas, as a plasma reaction jig material used in semiconductor manufacturing. . Further, the method of the present invention has an advantage that quartz glass and quartz glass jig having excellent plasma corrosion resistance can be efficiently produced.

Claims (12)

Two or more metal elements comprising a first metal element that is one kind of Group 3B of the periodic table and at least one second metal element that is selected from the group consisting of Zr, Y, lanthanoids and actinoids When the quartz glass ingot is prepared by mixing the two or more kinds of metal element powders or their compound powders into quartz powder using a Bernoulli method, and by heating, melting and dropping, A quartz glass excellent in plasma corrosion resistance, which is produced by heating the surface temperature of a quartz glass ingot to 1800 ° C. or higher .     The blending ratio of the first metal element (M1) and the sum of one or more of the second metal elements (M2) is (M1) / (M2) = 0.1-10 in weight ratio. The quartz glass according to claim 1, which is in a range.     The quartz glass according to claim 1 or 2, wherein the first metal element is Al and the second metal element is Nd or Sm. 4. The quartz glass according to claim 1, wherein the content of bubbles and foreign matters is less than 100 mm ^{2 in} a projected area per 100 cm ³ , and the internal transmittance of visible light is 50% / cm or more. Per To create an excellent quartz glass ingot of quartz powder to the plasma corrosion resistance Verneuil method, two or more kinds of metal elements powder or their compounds flour, mixed quartz powder, when creating a quartz glass ingot is heated and melted drop A method for producing quartz glass, wherein the surface temperature of the quartz glass ingot is heated to 1800 ° C. or higher, wherein the quartz glass ingot contains 0.1 to 20 wt% of the two or more metal elements in combination and the metal The element is composed of a first metal element which is one kind of Group 3B of the periodic table and a second metal element which is at least one kind selected from the group consisting of Zr, Y, lanthanoid and actinoid A method for producing quartz glass having excellent plasma corrosion resistance . Per To create an excellent quartz glass ingot of quartz powder to the plasma corrosion resistance Verneuil method, and at the same time create a quartz glass ingot by heating and melting falls silica powder, two or more kinds of metal elements or pure compounds thereof, acid solution A method for producing quartz glass, in which a solution prepared by dissolving in a basic solution or an organic solvent is continuously dropped onto the growth surface of the quartz glass ingot, wherein the quartz glass ingot comprises the two or more metal elements. And at least one selected from the group consisting of Zr, Y, lanthanoids and actinoids, a first metal element containing 0.1 to 20 wt% of the metal element, and the metal element being one type of Group 3B of the periodic table A method for producing quartz glass excellent in plasma corrosion resistance, characterized by comprising a second metal element of a kind . Quartz glass powder having an overall particle size distribution in the range of 0.01 to 1000 μm, and the weight ratio of particles in the range of 0.01 to 5 μm is 1 to 50 wt%, pure water, and acidic A slurry is prepared by mixing and dissolving at least two kinds of metal elements or compounds thereof soluble in a solution, a basic solution or an organic solvent in pure water, an acidic solution, a basic solution or an organic solvent. A quartz glass production method for producing a quartz glass ingot by heating and melting under vacuum after drying and individualization , wherein the quartz glass ingot is composed of 0.1 to 20 wt% of two or more kinds of metal elements. And at least one selected from the group consisting of Zr, Y, lanthanoids and actinoids, and a first metal element which is one type of Group 3B of the periodic table A method for producing quartz glass excellent in plasma corrosion resistance, characterized by comprising a second metal element .     The method for producing quartz glass according to claim 7, wherein the metal compound is a nitric acid compound and the solvent is pure water. A metal element-containing layer made of the quartz glass according to any one of claims 1 to 4 having a thickness from the surface to a predetermined depth and containing 0.1 to 20 wt% of the metal element is formed. A quartz glass jig with excellent plasma corrosion resistance .     The quartz glass jig according to claim 9, wherein the metal element content layer has a thickness of at least 5 mm. A solution prepared by mixing and dissolving in pure water, an acidic solution, a basic solution or an organic solvent at least two kinds of metal elements or compounds thereof that can be dissolved in pure water, acidic solution, basic solution or organic solvent A method for producing a quartz glass jig, which is applied to the surface of a quartz glass jig prepared in advance and then heated and melted on the surface, and the quartz glass ingot which is a material of the quartz glass jig has two or more types The metal element was selected from the group consisting of the first metal element containing 0.1 to 20 wt% of the metal element and the metal element being one type of Group 3B of the periodic table, and Zr, Y, lanthanoid and actinoid A method for producing a quartz glass jig excellent in plasma corrosion resistance, comprising at least one second metal element . The method for producing a quartz glass jig according to claim 11, wherein the solution containing the metal element is an organometallic compound solution containing at least two kinds of metal elements or a solution prepared by dissolving the solution in an organic solvent.