JP3647143B2 - 電子ビーム露光装置及びその露光方法 - Google Patents
電子ビーム露光装置及びその露光方法 Download PDFInfo
- Publication number
- JP3647143B2 JP3647143B2 JP15099096A JP15099096A JP3647143B2 JP 3647143 B2 JP3647143 B2 JP 3647143B2 JP 15099096 A JP15099096 A JP 15099096A JP 15099096 A JP15099096 A JP 15099096A JP 3647143 B2 JP3647143 B2 JP 3647143B2
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- JP
- Japan
- Prior art keywords
- optical system
- electron
- electron beam
- electron optical
- exposure apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15099096A JP3647143B2 (ja) | 1996-06-12 | 1996-06-12 | 電子ビーム露光装置及びその露光方法 |
| EP03077052A EP1369896A3 (en) | 1996-03-04 | 1997-03-04 | Electron beam exposure apparatus and method and device manufacturing method |
| EP03077053A EP1369897A3 (en) | 1996-03-04 | 1997-03-04 | Electron beam exposure apparatus and method, and device manufacturing method |
| EP97301406A EP0794552B1 (en) | 1996-03-04 | 1997-03-04 | Electron beam exposure apparatus and method, and device manufacturing method |
| EP03077051A EP1369895B1 (en) | 1996-03-04 | 1997-03-04 | Electron beam exposure apparatus and method, and device manufacturing method |
| US08/811,602 US5834783A (en) | 1996-03-04 | 1997-03-04 | Electron beam exposure apparatus and method, and device manufacturing method |
| DE69738276T DE69738276T2 (de) | 1996-03-04 | 1997-03-04 | Elektronenstrahl-Belichtungsgerät, Belichtungsverfahren und Verfahren zur Erzeugung eines Objekts |
| KR1019970007085A KR100225335B1 (ko) | 1996-03-04 | 1997-03-04 | 전자빔노광장치와 그 방법 및 디바이스제조방법 |
| US09/098,432 US5973332A (en) | 1996-03-04 | 1998-06-17 | Electron beam exposure method, and device manufacturing method using same |
| US09/313,072 US6166387A (en) | 1996-03-04 | 1999-05-17 | Electron beam exposure apparatus and method |
| US09/596,052 US6323499B1 (en) | 1996-03-04 | 2000-06-16 | Electron beam exposure apparatus and method, and device manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15099096A JP3647143B2 (ja) | 1996-06-12 | 1996-06-12 | 電子ビーム露光装置及びその露光方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH09330870A JPH09330870A (ja) | 1997-12-22 |
| JP3647143B2 true JP3647143B2 (ja) | 2005-05-11 |
| JPH09330870A5 JPH09330870A5 (enExample) | 2005-08-04 |
Family
ID=15508881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15099096A Expired - Fee Related JP3647143B2 (ja) | 1996-03-04 | 1996-06-12 | 電子ビーム露光装置及びその露光方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3647143B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3647128B2 (ja) * | 1996-03-04 | 2005-05-11 | キヤノン株式会社 | 電子ビーム露光装置とその露光方法 |
| JP2001267221A (ja) * | 2000-03-17 | 2001-09-28 | Canon Inc | 荷電粒子線露光装置及びデバイス製造方法 |
| JP2003077813A (ja) * | 2001-09-05 | 2003-03-14 | Nikon Corp | 荷電粒子線露光装置の結像性能の評価方法、荷電粒子線露光装置の調整方法、ビームぼけ計測装置及び荷電粒子線露光装置 |
| JP2005032837A (ja) * | 2003-07-08 | 2005-02-03 | Canon Inc | 荷電粒子描画方法及び該方法を用いたデバイス製造方法 |
| JP4477436B2 (ja) | 2004-06-30 | 2010-06-09 | キヤノン株式会社 | 荷電粒子線露光装置 |
| NL2006868C2 (en) | 2011-05-30 | 2012-12-03 | Mapper Lithography Ip Bv | Charged particle multi-beamlet apparatus. |
| JP6791051B2 (ja) * | 2017-07-28 | 2020-11-25 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 |
-
1996
- 1996-06-12 JP JP15099096A patent/JP3647143B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09330870A (ja) | 1997-12-22 |
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