JP3621869B2 - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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JP3621869B2
JP3621869B2 JP2000180382A JP2000180382A JP3621869B2 JP 3621869 B2 JP3621869 B2 JP 3621869B2 JP 2000180382 A JP2000180382 A JP 2000180382A JP 2000180382 A JP2000180382 A JP 2000180382A JP 3621869 B2 JP3621869 B2 JP 3621869B2
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metal film
metal
resin
semiconductor device
recess
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JP2001358254A (en
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信幸 倉嶋
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device having high reliability by preventing flanking and fallout of a metal film covering the outside surfaces of resin bumps. SOLUTION: A depression 14 is formed near a portion to be mounted with a device on one surface of a metal base material 10 in such a way as to align in plane arrangement with an external connection terminal 26 electrically connected to a semiconductor device 20 to be mounted on the portion to be mounted with the device. The inside of the depression 14 is covered with a metal film 16 that is not dissolved by an etching liquid dissolving the metal base material 11. The edge of the opening of the depression 14 is swaged to make the peripheral portion of the metal film 16 form a retaining portion 16a projecting to the inside of the depression 14. The semiconductor device 20 is mounted on the portion to be mounted with a device on the one surface of the metal base material 10 where the retaining portion 16a is formed. The electrode terminal of the semiconductor device 20 is bonded to the inside of the metal film 16 with a bonding wire 22. The semiconductor device 20, the bonding wire 22 and the one surface of the metal base material 10 including the depression 14 are sealed with resin. Then the metal base material 10 is melted and removed to expose the metal film 16.

Description

【０００１】
【発明の属する技術分野】
本発明は半導体素子を封止する樹脂封止部と一体に樹脂バンプ部が形成され、樹脂バンプ部の外面に導体膜が被着されて外部接続端子が形成された半導体装置及びその製造方法に関する。
【０００２】
【従来の技術】
図７は半導体素子を封止する樹脂封止部と一体に樹脂バンプ部が形成され、樹脂バンプ部の外表面に金属膜が被着されてバンプ状の外部接続端子が形成された半導体装置の製造方法を示す。
図７（ａ）は、銅箔等の金属基材１０の両面をレジストにより被覆し、露光・現像して金属基材１０の一方の面の外部接続端子を形成する部位を露出させたレジストパターン１２を形成し、レジストパターン１２をマスクとして金属基材１０をエッチングすることにより、金属基材１０の一方の面に凹部１４を形成した状態である。凹部１４は外部接続端子となるバンプを形成するためのものである。
【０００３】
図７（ｂ）は、金属基材１０に形成した凹部１４の内面にめっきを施し、凹部１４の内面を金属膜１６によって被覆した状態を示す。この金属膜１６は外部接続端子のバンプの外表面を被覆する部分となるものであり、金属基材１０を溶解して除去する際に使用するエッチング液によっては溶解されない金属によって形成する。
図７（ｃ）は、金属基材１０の両面のレジストを除去した状態で、金属基材１０の一方の面に金属膜１６によって内面が被覆された凹部１４が形成されている状態である。
【０００４】
図７（ｄ）〜（ｇ）は、金属基材１０に半導体素子２０を搭載して半導体装置を形成する工程である。図７（ｄ）は、金属基材１０の一方の面の素子搭載部に導電性ペースト１８を用いて半導体素子２０を搭載した状態を示す。図７（ｅ）は、ワイヤボンディングにより半導体素子２０と金属膜１６とを電気的に接続した状態を示す。ワイヤボンディングの際は半導体素子２０の電極端子と凹部１４の底部の金属膜１６の内面とをボンディングワイヤ２２によって接続する。
図７（ｆ）は、樹脂封止装置を用いて半導体素子２０、ボンディングワイヤ２２及び凹部１４を含む領域を樹脂封止した状態である。２４が樹脂封止部である。図７（ｇ）は、金属基材１０を溶解して除去し、金属膜１６を外部に露出させて半導体装置を得た状態を示す。金属膜１６は樹脂封止部２４の下面からバンプ状に突出した樹脂バンプ部２４ａの外表面を被覆して形成されており、樹脂バンプ部２４ａ及び金属膜１６によってバンプ状の外部接続端子２６が形成された半導体装置が得られる。
【０００５】
【発明が解決しようとする課題】
図７（ｇ）に示す半導体装置は、半導体素子２０と金属膜１６とをボンディングワイヤ２２により直接接続しているから引き回し用の配線パターンを形成する必要がなく、製造が容易であるとともに、半導体装置の小型化を図ることができ、従来の製造装置を用いて量産することが容易であるという利点がある。
しかしながら、上記半導体装置は金属膜１６が樹脂バンプ部２４ａの外表面に被着して保持されているのみであり、樹脂と金属膜１６との密着性が不十分であると樹脂バンプ部２４ａの外表面から金属膜１６が剥離するという問題がある。このため金属膜１６の樹脂と接する面を化学的に荒らして粗面化したり、金属膜１６と密着性の良い樹脂材を選ぶことによって金属膜１６が剥離する問題を解消することが検討されている。
【０００６】
本発明は、これらの問題点を解消すべくなされたものであり、その目的とするところは、半導体素子を封止する樹脂封止部と一体に樹脂バンプ部が形成され、樹脂バンプの外表面に金属膜が被着されて外部接続端子が形成された半導体装置において、外部接続端子の金属膜の剥離、脱落を防止し、信頼性の高い製品として提供することができる半導体装置及びこの半導体装置の好適な製造方法を提供するにある。
【０００７】
【課題を解決するための手段】
上記の目的を達成するため、本発明は次の構成を備える。
すなわち、半導体素子を樹脂封止する樹脂封止部の実装面側に樹脂封止部と一体に複数の樹脂バンプ部が形成され、該樹脂バンプ部の外表面が金属膜により被覆されるとともに、該金属膜の内面と半導体素子の電極端子とがワイヤボンディングされてなる半導体装置において、前記樹脂バンプ部の基部を被覆する前記金属膜の周縁部が、前記樹脂バンプ部の基部位置から樹脂バンプ部の内側に突出する係止部に形成されていることを特徴とする。
また、前記係止部が、前記金属膜の周縁部の全周に形成されていることは、樹脂バンプ部と金属膜とのくい付きを強固にし、金属膜の剥離、脱落を防止する上で有効である。
【０００８】
また、半導体装置の製造方法において、金属基材の一方の面の素子搭載部の近傍に、該素子搭載部に搭載する半導体素子と電気的に接続される外部接続端子の平面配置に合わせて凹部を形成し、該凹部の内面を前記金属基材を溶解するエッチング液で溶解されない金属からなる金属膜によって被覆した後、前記凹部の開口縁に潰し加工を施して前記金属膜の周縁部が凹部の内側に突出する係止部を形成し、該係止部を形成した金属基材の一方の面の素子搭載部に半導体素子を搭載して、該半導体素子の電極端子と前記金属膜の内面とをワイヤボンディングし、前記半導体素子、ボンディングワイヤ及び凹部を含む前記金属基材の一方の面側を樹脂封止した後、前記金属基材を溶解して除去し、前記金属膜を露出させることを特徴とする。
また、前記凹部の内面に、金めっき、パラジウムめっき、ニッケルめっき及びパラジウムめっきの順にめっきを施して前記金属膜を形成することにより、ワイヤボンディング性が良好な金属膜を形成することができ、はんだ付け等による実装が確実にできる半導体装置を製造することができる。
【０００９】
【発明の実施の形態】
以下、本発明の好適な実施形態を添付図面に基づいて詳細に説明する。
本発明に係る半導体装置の製造方法は金属基材を利用して半導体装置を製造する点においては、前述した従来の半導体装置の製造方法と同様である。
すなわち、金属基材の一方の面に凹部を形成し、凹部の内面を金属膜によって被覆し、金属基材の一方の面の素子搭載部に半導体素子を搭載し、半導体素子と金属膜とをワイヤボンディングにより電気的に接続し、金属基材の半導体素子を搭載した面を樹脂封止した後、金属基材を溶解して除去することにより、樹脂封止部の外表面にバンプ状に突出した外部接続端子を形成して半導体装置を得る。
【００１０】
本発明に係る半導体装置の製造方法で特徴とする点は、金属基材に形成する外部接続端子を形成するための金属膜を加工する方法にある。
以下では、まず、金属基材を加工して半導体素子を搭載する金属フレームを形成するまでの加工方法について説明する。
図１は金属基材１０に凹部１４を形成して凹部１４の内面を金属膜１６によって被覆するまでの加工工程を示す。
図１（ａ）は、まず、銅箔等の金属基材１０の両面をレジスト１１によって被覆した状態である。金属基材１０は後工程でエッチング液を用いて溶解して除去するから、金属基材１０にはエッチングによって容易に溶解して除去できる材料を選択するのがよい。本実施形態では、金属基材１０として、厚さ０．１５ｍｍの銅材を使用している。
【００１１】
図１（ｂ）は、レジスト１１を露光・現像し金属基材１０の凹部１４を形成する部位を露出させたレジストパターン１２を形成した状態である。凹部１４は金属基材１０の一方の面のみに設ける。したがって、金属基材１０の一方の面のレジスト１１を露光・現像してレジストパターン１２を形成している。
図１（ｃ）は、レジストパターン１２をマスクとして金属基材１０をエッチングし、金属基材１０に凹部１４を形成した状態を示す。本実施形態では、凹部１４は平面寸法が０．６ｍｍ、深さ０．１ｍｍ程度に形成した。
【００１２】
図１（ｄ）は、金属基材１０をエッチングして形成した凹部１４の内面にめっきを施し、凹部１４の内面を金属膜１６によって被覆した状態を示す。１３は金属基材１０のエッチングに使用したレジストパターン１２を溶解して除去した後、金属基材１０の表面を被覆しためっき用のレジストである。めっき用のレジスト１３をエッチングして金属基材１０の凹部１３を露出させてめっきを施す。
金属膜１６を形成するめっきは適宜選択可能であるが、本実施形態では、外部接続端子の外表面に露出する側から、金めっき−パラジウムめっき−ニッケルめっき−パラジウムめっきを施して４層構成によって形成している。このようなめっき構成とすることによって金属膜１６のワイヤボンディング性を良好とし実装時のはんだ付け性を良好にすることができる。金属膜１６の総厚は５〜１０μｍである。
図１（ｅ）は、めっきを施した後、めっき用のレジスト１３を溶解して除去した状態である。金属基材１０の一方の面に凹部１４が形成され、凹部１４の内面が金属膜１６によって被覆されている。
【００１３】
図２は、本願発明で特徴的な加工工程で、凹部１４の開口縁に潰し加工を施し、凹部１４の内面を被覆する金属膜１６の周縁部に係止部１６ａを形成する加工工程を示している。
図２（ａ）は、内面が金属膜１６によって被覆された凹部１４を形成した金属基材１０である。図２（ｂ）は、この金属基材１０に潰し加工を施した状態を示す。ポンチ３０は金属基材１０に当接する端面を略平坦面に形成するとともに、ポンチ３０の端面の平面寸法を凹部１４の開口寸法よりも若干大きく形成し、凹部１４の上方から金属基材１０を水平に突くことによって、凹部１４の開口縁をわずかに潰し、この潰し加工により凹部１４の内面に被着されている金属膜１６の周縁部を凹部１４の内側に突出させて係止部１６ａを形成する。３２は潰し加工により凹部１４の開口縁に形成された段差部である。
【００１４】
金属基材１０の凹部１４に施す潰し加工は、図２（ｂ）に示すように、金属膜１６の端縁を凹部１４の内側に突出させるようにすることを目的とするものであり、金属膜１６の周縁部を凹部１４の内側に突出させることによって、半導体素子を樹脂封止した際に樹脂に金属膜１６がくい付き、金属膜１６が樹脂から剥離したり脱落したりすることを防止する。図２（ｂ）に示す例は、係止部１６ａが金属基材１０の平面と略平行に突出するように加工した例であるが、係止部１６ａが凹部１４の内側に若干突出するように加工することで、金属膜１６が剥離することを防止することができる。ポンチ３０の端面の形状を、ポンチ３０によって金属基材１０を突いた際に、金属基材１０の肉を内側に寄せて金属膜１６の周縁部が凹部１４の内側に突出しやすくなるようにしてもよい。
【００１５】
また、係止部１６ａは金属膜１６の周縁部の全周にわたってリング状に形成してもよいし、金属膜１６の周縁部の一部を潰し加工して、金属膜１６の周縁部に部分的に凹部１４の内側に突出する部位を形成して係止部１６ａとしてもよい。図３は、金属基材１０に凹部１４を形成し、凹部１４の内面を金属膜１６によって被覆し、凹部１４に潰し加工を施して金属膜１６の周縁部に係止部１６ａを形成した金属フレーム４０の平面図を示す。１７は半導体素子を搭載する素子搭載部である。素子搭載部１７の周囲に、内面に金属膜１６が被覆された凹部１４が形成されている。
図４は金属フレームを拡大して示す平面図であり、金属膜１６の周縁部に係止部１６ａが形成されていることを示す。
金属基材１０に上述したように凹部１４等を加工する場合は、実際には、短冊状あるいは大判の金属基材１０を被加工品とし、この金属基材１０に所要の加工を施して金属フレーム４０を形成する。
【００１６】
図５は、上記のようにして形成した金属フレームに半導体素子２０を搭載し、樹脂封止して半導体装置を製造する工程を示す。
図５（ａ）は、金属フレーム４０の素子搭載部１７に導電性ペースト１８を用いて半導体素子２０を搭載した状態である。
図５（ｂ）は、次に、ワイヤボンディングにより半導体素子２０と金属膜１６とを電気的に接続した状態である。ワイヤボンディングの際には、半導体素子２０の電極端子と凹部１４の底部の金属膜１６の内面とをボンディングする。２２がボンディングワイヤである。
なお、ワイヤボンディングによって半導体素子２０と金属膜１６とを接続する他の方法として、凹部１４の底部の金属膜１６の内面にあらかじめ金バンプを形成しておき、この金バンプ上に金ワイヤをワイヤボンディングして接続する方法も可能である。
【００１７】
図５（ｃ）は、金属基材１０の半導体素子２０を搭載した面を樹脂封止した状態を示す。この樹脂封止の際には、半導体素子２０、ボンディングワイヤ２２及び金属膜１６（凹部１４）を封止するよう樹脂成形する。樹脂封止金型を用いた樹脂封止により、凹部１４内に樹脂が充填され、樹脂封止部２４が一体に樹脂成形される。
図５（ｄ）は、樹脂封止が終了した後、金属基材１０を塩化第２鉄を主成分とするエッチング液により溶解して除去し、半導体装置を得た状態を示す。金属基材１０を溶解して除去することにより、樹脂封止部２４に半導体素子２０及びボンディングワイヤ２２が封止されるとともに、樹脂封止部２４の実装面側の外面に外部接続端子２６がバンプ状に突出して形成された半導体装置が得られる。
【００１８】
外部接続端子２６は、樹脂封止した際に凹部１４に樹脂が充填されることによってバンプ状に成形される樹脂バンプ部２４ａの外表面に金属膜１６が被着されて形成されている。
金属膜１６の周縁部には図２（ｂ）に示すように係止部１６ａが形成されているから、樹脂封止の際に係止部１６ａが樹脂中にくい込んで樹脂成形され、金属膜１６が樹脂バンプ部２４ａから剥離したり脱落したりすることを防止する。なお、樹脂バンプ部２４ａの基部には、金属膜１６に潰し加工を施した際に金属基材１０の表面に形成された段差３２による突部２４ｂが形成される。
【００１９】
本実施形態の半導体装置によれば、金属膜１６の周縁部に係止部１６ａを設けて金属膜１６の剥離あるいは脱落を防止したことにより、金属膜１６の内面を荒らして粗面化することによって金属膜１６と樹脂との密着性を向上させるといった必要がなくなり、ワイヤボンディング性を重視した金属膜１６の構成とすることができ、半導体素子２０と外部接続端子１６とを確実に電気的に接続することが可能になる。また、半導体素子２０の樹脂封止に使用する樹脂材として、金属膜１６との密着性よりも放熱性を重視した材料を選ぶといったことが可能になり、これによって半導体装置の信頼性を向上させることが可能になる。
【００２０】
なお、半導体素子を搭載する金属フレームは種々の形状に形成することができ、これによって半導体装置も任意の形状に形成することができる。図６に示す半導体装置の製造方法は、凹部状の素子搭載部を形成した金属フレームを使用して半導体装置を製造することを特徴とする。図６（ａ）は、金属基材１０の表面にエッチング用のレジストパターン１２を形成し、ハーフエッチングにより外部接続端子を形成するための凹部１４と半導体素子２０を搭載する素子搭載用凹部５０を形成した状態である。図６（ｂ）は、めっき用のレジスト１３によって金属基材１０の表面を被覆し、めっきを施して凹部１４の内面と素子搭載凹部５０の内面を金属膜１６、５２によって被覆した状態である。金属膜１６、５２は適宜めっきを順次施すことによって複数の層構成とすることができる。
【００２１】
図６（ｃ）は、本発明に係る半導体装置の製造方法において特徴的な工程で、凹部１４及び素子搭載凹部５０の開口縁に潰し加工を施し、凹部１４及び素子搭載凹部５０の内面を被覆する金属膜１６、５２の周縁部に係止部１６ａ、５２ａを形成した状態である。
このようにして形成した金属フレーム４０に半導体素子２０を接着剤層を介して搭載し、金属フレーム４０の半導体素子２０を搭載した面を樹脂封止し（図６（ｄ））、樹脂封止した後、金属フレーム４０を溶解して除去することによって樹脂封止部２４の外面から外部接続端子２６がバンプ状に突出した半導体装置を得ることができる。
【００２２】
本実施形態の半導体装置は素子搭載凹部５０に半導体素子２０を搭載して半導体素子２０の搭載位置を低くすることにより半導体装置の薄型化を図ることが可能になる。また、素子搭載凹部５０を半導体素子２０が搭載される中央部が一段低位となる形状に形成し、半導体素子２０から素子搭載凹部５０の内面を被覆する金属膜５２の段差部分にワイヤボンディング可能とすることにより、金属膜５２を接地電位あるいは電源電位として半導体素子２０と接地電位等とを容易に電気的に接続することが可能となる。
【００２３】
本実施形態の半導体装置の場合も、上述した実施形態と同様に、樹脂バンプ部２４ａの外表面を被覆する金属膜１６の剥離あるいは脱落を効果的に防止することができる。また、半導体素子２０が搭載される金属膜５２についても係止部５２ａを形成したことによって樹脂封止部２４から金属膜５２が剥離することを防止することができ、半導体装置の信頼性を向上させることができる。
【００２４】
【発明の効果】
本発明に係る半導体装置によれば、上述したように、外部接続端子を構成する金属膜の剥離や脱落を効果的に防止することができ、信頼性の高い半導体装置として提供することができる。また、本発明に係る半導体装置の製造方法によれば、金属膜に容易に係止部を形成することができ、金属膜の剥離や脱落を防止した信頼性の高い半導体装置を製造することが可能になる。また、これによって、確実にワイヤボンディングでき、放熱性にすぐれた半導体装置を提供することが可能になる。
【図面の簡単な説明】
【図１】半導体装置の製造に用いる金属フレームを製造する工程を示す説明図である。
【図２】金属膜の周縁部に係止部を形成する工程を示す説明図である。
【図３】半導体装置の製造に用いる金属フレームの例を示す平面図である。
【図４】金属フレームを拡大して示す説明図である。
【図５】金属フレームを用いて半導体装置を製造する実施形態を示す説明図である。
【図６】金属フレームを用いて半導体装置を製造する他の実施形態を示す説明図である。
【図７】半導体装置の従来の製造方法を示す説明図である。
【符号の説明】
１０ 金属基材
１１ レジスト
１２ レジストパターン
１３ レジスト
１４ 凹部
１６ 金属膜
１６ａ 係止部
１７ 素子搭載部
１８ 導電性ペースト
２０ 半導体素子
２２ ボンディングワイヤ
２４ 樹脂封止部
２４ａ 樹脂バンプ部
２４ｂ 突部
２６ 外部接続端子
３０ ポンチ
４０ 金属フレーム[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device in which a resin bump portion is formed integrally with a resin sealing portion for sealing a semiconductor element, a conductor film is attached to the outer surface of the resin bump portion, and an external connection terminal is formed, and a manufacturing method thereof. .
[0002]
[Prior art]
FIG. 7 shows a semiconductor device in which a resin bump part is formed integrally with a resin sealing part for sealing a semiconductor element, and a metal film is deposited on the outer surface of the resin bump part to form a bump-like external connection terminal. A manufacturing method is shown.
FIG. 7A shows a resist pattern in which both surfaces of a metal substrate 10 such as a copper foil are coated with a resist, and exposed and developed to expose a portion for forming an external connection terminal on one surface of the metal substrate 10. 12 is formed, and the metal substrate 10 is etched using the resist pattern 12 as a mask to form a recess 14 on one surface of the metal substrate 10. The recess 14 is for forming a bump to be an external connection terminal.
[0003]
FIG. 7B shows a state in which the inner surface of the recess 14 formed on the metal substrate 10 is plated and the inner surface of the recess 14 is covered with the metal film 16. The metal film 16 is a portion that covers the outer surface of the bump of the external connection terminal, and is formed of a metal that is not dissolved by an etching solution used when the metal substrate 10 is dissolved and removed.
FIG. 7C shows a state in which the recess 14 whose inner surface is covered with the metal film 16 is formed on one surface of the metal substrate 10 with the resist on both surfaces of the metal substrate 10 removed.
[0004]
7D to 7G show a process of forming a semiconductor device by mounting the semiconductor element 20 on the metal substrate 10. FIG. 7D shows a state in which the semiconductor element 20 is mounted on the element mounting portion on one surface of the metal substrate 10 using the conductive paste 18. FIG. 7E shows a state where the semiconductor element 20 and the metal film 16 are electrically connected by wire bonding. In wire bonding, the electrode terminal of the semiconductor element 20 and the inner surface of the metal film 16 at the bottom of the recess 14 are connected by a bonding wire 22.
FIG. 7F shows a state where the region including the semiconductor element 20, the bonding wire 22, and the recess 14 is resin-sealed using a resin sealing device. Reference numeral 24 denotes a resin sealing portion. FIG. 7G shows a state in which the metal substrate 10 is dissolved and removed, and the metal film 16 is exposed to the outside to obtain a semiconductor device. The metal film 16 is formed so as to cover the outer surface of the resin bump portion 24 a protruding in a bump shape from the lower surface of the resin sealing portion 24, and the bump-shaped external connection terminal 26 is formed by the resin bump portion 24 a and the metal film 16. A formed semiconductor device is obtained.
[0005]
[Problems to be solved by the invention]
In the semiconductor device shown in FIG. 7G, since the semiconductor element 20 and the metal film 16 are directly connected by the bonding wires 22, there is no need to form a wiring pattern for routing, and the semiconductor device is easy to manufacture. There is an advantage that the apparatus can be miniaturized and can be easily mass-produced using a conventional manufacturing apparatus.
However, in the above semiconductor device, the metal film 16 is only adhered and held on the outer surface of the resin bump portion 24a, and if the adhesion between the resin and the metal film 16 is insufficient, the resin bump portion 24a There is a problem that the metal film 16 peels from the outer surface. For this reason, it is considered that the surface of the metal film 16 in contact with the resin is chemically roughened to roughen the surface, or the resin film having good adhesion with the metal film 16 is selected to solve the problem of peeling off the metal film 16. Yes.
[0006]
The present invention has been made to solve these problems. The object of the present invention is to form a resin bump portion integrally with a resin sealing portion for sealing a semiconductor element, and to form an outer surface of the resin bump. Semiconductor device in which an external connection terminal is formed by depositing a metal film on the semiconductor device, and the semiconductor device which can be provided as a highly reliable product by preventing the metal film of the external connection terminal from peeling and dropping It is in providing the suitable manufacturing method.
[0007]
[Means for Solving the Problems]
In order to achieve the above object, the present invention comprises the following arrangement.
That is, a plurality of resin bump parts are formed integrally with the resin sealing part on the mounting surface side of the resin sealing part for resin sealing the semiconductor element, and the outer surface of the resin bump part is covered with a metal film, in the semiconductor device and the electrode terminals of the inner surface and the semiconductor element of the metal film is formed by wire bonding, the periphery of the metal film covering the base of the resin bump portion, the resin bumps resin bump portion from the base position of It is formed in the latching | locking part which protrudes inside .
In addition, the fact that the locking portion is formed on the entire circumference of the peripheral portion of the metal film strengthens the adhesion between the resin bump portion and the metal film, and prevents the metal film from peeling off or falling off. It is valid.
[0008]
Further, in the method for manufacturing a semiconductor device, a recess is formed in the vicinity of the element mounting portion on one surface of the metal base material in accordance with the planar arrangement of the external connection terminals that are electrically connected to the semiconductor element mounted on the element mounting portion. form, and after the inner surface of the recess covered by a metal film made of a metal that is not dissolved by an etchant that dissolves the metal substrate, the peripheral portion of the metal film is subjected to processing crushing the opening edge of the recess recesses A locking portion projecting inwardly of the metal substrate, a semiconductor element is mounted on the element mounting portion on one side of the metal substrate on which the locking portion is formed, and the electrode terminal of the semiconductor element and the inner surface of the metal film And bonding one surface side of the metal substrate including the semiconductor element, the bonding wire, and the recess with resin, and then dissolving and removing the metal substrate to expose the metal film. It is characterized by.
Further, on the inner surface of the recess, gold plating, palladium plating, by forming the metal film by plating in the order of nickel plating and palladium plating, it is possible to wire bondability to form a good metal film, solder A semiconductor device that can be reliably mounted by attaching or the like can be manufactured.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described in detail with reference to the accompanying drawings.
The semiconductor device manufacturing method according to the present invention is the same as the above-described conventional semiconductor device manufacturing method in that the semiconductor device is manufactured using a metal substrate.
That is, a concave portion is formed on one surface of a metal base, the inner surface of the concave is covered with a metal film, a semiconductor element is mounted on an element mounting portion on one side of the metal base, and the semiconductor element and the metal film are After electrically connecting by wire bonding and sealing the surface of the metal substrate with the semiconductor element mounted on it, the metal substrate is melted and removed to protrude on the outer surface of the resin-encapsulated part in a bump shape The external connection terminal is formed to obtain a semiconductor device.
[0010]
A feature of the method for manufacturing a semiconductor device according to the present invention resides in a method of processing a metal film for forming external connection terminals formed on a metal substrate.
Below, the processing method until it processes a metal base material and forms the metal frame which mounts a semiconductor element first is demonstrated.
FIG. 1 shows the processing steps from forming a recess 14 in a metal substrate 10 to covering the inner surface of the recess 14 with a metal film 16.
FIG. 1A shows a state where both surfaces of a metal substrate 10 such as a copper foil are covered with a resist 11. Since the metal substrate 10 is dissolved and removed by using an etching solution in a later step, it is preferable to select a material that can be easily dissolved and removed by etching. In the present embodiment, a copper material having a thickness of 0.15 mm is used as the metal substrate 10.
[0011]
FIG. 1B shows a state in which a resist pattern 12 is formed by exposing and developing the resist 11 to expose a portion where the concave portion 14 of the metal substrate 10 is formed. The recess 14 is provided only on one surface of the metal substrate 10. Therefore, the resist pattern 12 is formed by exposing and developing the resist 11 on one surface of the metal substrate 10.
FIG. 1C shows a state in which the metal substrate 10 is etched using the resist pattern 12 as a mask to form a recess 14 in the metal substrate 10. In the present embodiment, the recess 14 is formed to have a planar dimension of about 0.6 mm and a depth of about 0.1 mm.
[0012]
FIG. 1 (d) shows a state in which the inner surface of the recess 14 formed by etching the metal substrate 10 is plated and the inner surface of the recess 14 is covered with the metal film 16. Reference numeral 13 denotes a plating resist in which the resist pattern 12 used for etching the metal substrate 10 is dissolved and removed, and then the surface of the metal substrate 10 is coated. The plating resist 13 is etched to expose the concave portion 13 of the metal base 10 and plating is performed.
Although plating for forming the metal film 16 can be selected as appropriate, in the present embodiment, gold plating-palladium plating-nickel plating-palladium plating is performed from the side exposed on the outer surface of the external connection terminal, and a four-layer structure is used. Forming. With such a plating configuration, the wire bonding property of the metal film 16 can be improved, and the solderability during mounting can be improved. The total thickness of the metal film 16 is 5 to 10 μm.
FIG. 1E shows a state where the plating resist 13 is dissolved and removed after plating. A recess 14 is formed on one surface of the metal substrate 10, and the inner surface of the recess 14 is covered with a metal film 16.
[0013]
FIG. 2 is a processing step characteristic of the present invention, and shows a processing step of crushing the opening edge of the recess 14 and forming the locking portion 16a on the peripheral edge of the metal film 16 covering the inner surface of the recess 14. ing.
FIG. 2A shows a metal substrate 10 having a recess 14 whose inner surface is covered with a metal film 16. FIG. 2B shows a state in which the metal base material 10 is crushed. The punch 30 is formed so that the end face abutting against the metal substrate 10 is a substantially flat surface, and the planar dimension of the end face of the punch 30 is slightly larger than the opening dimension of the recess 14, and the metal substrate 10 is formed from above the recess 14. By projecting horizontally, the opening edge of the concave portion 14 is slightly crushed, and the peripheral portion of the metal film 16 deposited on the inner surface of the concave portion 14 is projected to the inside of the concave portion 14 by this crushing process so that the locking portion 16a is Form. Reference numeral 32 denotes a stepped portion formed on the opening edge of the recess 14 by crushing.
[0014]
The crushing process applied to the recess 14 of the metal base 10 is intended to cause the edge of the metal film 16 to protrude inside the recess 14 as shown in FIG. By projecting the peripheral edge of the film 16 to the inside of the recess 14, the metal film 16 sticks to the resin when the semiconductor element is sealed with the resin, and the metal film 16 is prevented from peeling off or dropping off from the resin. To do. The example shown in FIG. 2B is an example in which the locking portion 16 a is processed so as to protrude substantially parallel to the plane of the metal substrate 10, but the locking portion 16 a slightly protrudes inside the recess 14. By processing the metal film 16, it is possible to prevent the metal film 16 from peeling off. The shape of the end face of the punch 30 is set so that when the metal base 10 is projected by the punch 30, the metal base 10 is brought inward so that the peripheral portion of the metal film 16 can easily protrude inside the recess 14. Also good.
[0015]
Further, the locking portion 16 a may be formed in a ring shape over the entire periphery of the peripheral edge of the metal film 16, or a part of the peripheral edge of the metal film 16 is crushed and partially formed on the peripheral edge of the metal film 16. Alternatively, a locking portion 16a may be formed by forming a portion protruding inside the recess 14. FIG. 3 shows a metal in which a recess 14 is formed in a metal substrate 10, the inner surface of the recess 14 is covered with a metal film 16, and the recess 14 is crushed to form a locking portion 16 a at the peripheral edge of the metal film 16. A plan view of the frame 40 is shown. Reference numeral 17 denotes an element mounting portion for mounting a semiconductor element. A recess 14 whose inner surface is covered with the metal film 16 is formed around the element mounting portion 17.
FIG. 4 is an enlarged plan view showing the metal frame, and shows that a locking portion 16 a is formed on the peripheral edge of the metal film 16.
When the recess 14 or the like is processed on the metal base 10 as described above, in actuality, a strip-shaped or large-sized metal base 10 is used as a workpiece, and the metal base 10 is subjected to necessary processing to obtain a metal. A frame 40 is formed.
[0016]
FIG. 5 shows a process of manufacturing the semiconductor device by mounting the semiconductor element 20 on the metal frame formed as described above and sealing with resin.
FIG. 5A shows a state where the semiconductor element 20 is mounted on the element mounting portion 17 of the metal frame 40 using the conductive paste 18.
FIG. 5B shows a state where the semiconductor element 20 and the metal film 16 are electrically connected by wire bonding. At the time of wire bonding, the electrode terminal of the semiconductor element 20 and the inner surface of the metal film 16 at the bottom of the recess 14 are bonded. Reference numeral 22 denotes a bonding wire.
As another method for connecting the semiconductor element 20 and the metal film 16 by wire bonding, a gold bump is formed in advance on the inner surface of the metal film 16 at the bottom of the recess 14, and the gold wire is wired on the gold bump. A method of connecting by bonding is also possible.
[0017]
FIG.5 (c) shows the state which sealed the surface which mounted the semiconductor element 20 of the metal base material 10 with resin. In this resin sealing, resin molding is performed so as to seal the semiconductor element 20, the bonding wire 22, and the metal film 16 (concave portion 14). By resin sealing using a resin sealing mold, the recess 14 is filled with resin, and the resin sealing portion 24 is integrally molded with resin.
FIG. 5D shows a state in which after the resin sealing is completed, the metal substrate 10 is dissolved and removed with an etching solution containing ferric chloride as a main component to obtain a semiconductor device. By dissolving and removing the metal base material 10, the semiconductor element 20 and the bonding wire 22 are sealed in the resin sealing portion 24, and the external connection terminal 26 is provided on the outer surface on the mounting surface side of the resin sealing portion 24. A semiconductor device formed to protrude in a bump shape is obtained.
[0018]
The external connection terminal 26 is formed by depositing a metal film 16 on the outer surface of a resin bump portion 24a formed into a bump shape by filling the recess 14 with resin when resin-sealed.
As shown in FIG. 2B, the locking portion 16a is formed on the peripheral portion of the metal film 16, so that the locking portion 16a is hardened into the resin during resin sealing, and is molded by resin. 16 is prevented from peeling off or falling off from the resin bump portion 24a. Note that, at the base of the resin bump portion 24a, a protrusion 24b is formed by a step 32 formed on the surface of the metal substrate 10 when the metal film 16 is crushed.
[0019]
According to the semiconductor device of the present embodiment, the inner surface of the metal film 16 is roughened and roughened by providing the locking portion 16a at the peripheral edge of the metal film 16 to prevent the metal film 16 from peeling or falling off. Therefore, it is not necessary to improve the adhesion between the metal film 16 and the resin, and the metal film 16 can be configured with an emphasis on wire bonding properties. The semiconductor element 20 and the external connection terminal 16 can be reliably electrically connected. It becomes possible to connect. In addition, as a resin material used for resin sealing of the semiconductor element 20, it is possible to select a material that emphasizes heat dissipation rather than adhesion to the metal film 16, thereby improving the reliability of the semiconductor device. It becomes possible.
[0020]
Note that the metal frame on which the semiconductor element is mounted can be formed in various shapes, and thus the semiconductor device can be formed in an arbitrary shape. The semiconductor device manufacturing method shown in FIG. 6 is characterized in that a semiconductor device is manufactured using a metal frame in which a concave element mounting portion is formed. In FIG. 6A, a resist pattern 12 for etching is formed on the surface of the metal substrate 10, and a recess 14 for forming external connection terminals by half etching and an element mounting recess 50 for mounting the semiconductor element 20 are formed. It is in a formed state. FIG. 6B shows a state in which the surface of the metal substrate 10 is covered with the resist 13 for plating, and the inner surface of the recess 14 and the inner surface of the element mounting recess 50 are covered with the metal films 16 and 52 by plating. . The metal films 16 and 52 can be formed into a plurality of layers by sequentially performing appropriate plating.
[0021]
FIG. 6C is a characteristic process in the method of manufacturing a semiconductor device according to the present invention, and crushing is performed on the opening edges of the recess 14 and the element mounting recess 50 to cover the inner surfaces of the recess 14 and the element mounting recess 50. The locking portions 16a and 52a are formed on the peripheral portions of the metal films 16 and 52 to be performed.
The semiconductor element 20 is mounted on the metal frame 40 formed as described above via an adhesive layer, and the surface of the metal frame 40 on which the semiconductor element 20 is mounted is resin-sealed (FIG. 6D). After that, by dissolving and removing the metal frame 40, a semiconductor device in which the external connection terminals 26 protrude from the outer surface of the resin sealing portion 24 in a bump shape can be obtained.
[0022]
In the semiconductor device of this embodiment, it is possible to reduce the thickness of the semiconductor device by mounting the semiconductor element 20 in the element mounting recess 50 and lowering the mounting position of the semiconductor element 20. Further, the element mounting recess 50 is formed in a shape in which the central portion where the semiconductor element 20 is mounted is one step lower, and wire bonding can be performed from the semiconductor element 20 to the step portion of the metal film 52 covering the inner surface of the element mounting recess 50. This makes it possible to easily electrically connect the semiconductor element 20 and the ground potential or the like with the metal film 52 as the ground potential or the power supply potential.
[0023]
Also in the case of the semiconductor device of this embodiment, it is possible to effectively prevent the metal film 16 that covers the outer surface of the resin bump portion 24a from being peeled off or dropped out, as in the above-described embodiment. Also, the metal film 52 on which the semiconductor element 20 is mounted can prevent the metal film 52 from being peeled off from the resin sealing portion 24 by forming the locking portion 52a, thereby improving the reliability of the semiconductor device. Can be made.
[0024]
【The invention's effect】
According to the semiconductor device of the present invention, as described above, the metal film constituting the external connection terminal can be effectively prevented from being peeled off or dropped off, and can be provided as a highly reliable semiconductor device. In addition, according to the method for manufacturing a semiconductor device according to the present invention, it is possible to easily form a locking portion on a metal film, and to manufacture a highly reliable semiconductor device that prevents the metal film from being peeled off or dropped off. It becomes possible. This also makes it possible to provide a semiconductor device that can reliably perform wire bonding and has excellent heat dissipation.
[Brief description of the drawings]
FIG. 1 is an explanatory view showing a process of manufacturing a metal frame used for manufacturing a semiconductor device.
FIG. 2 is an explanatory view showing a process of forming a locking portion at the peripheral edge of the metal film.
FIG. 3 is a plan view showing an example of a metal frame used for manufacturing a semiconductor device.
FIG. 4 is an explanatory view showing an enlarged metal frame.
FIG. 5 is an explanatory view showing an embodiment in which a semiconductor device is manufactured using a metal frame.
FIG. 6 is an explanatory view showing another embodiment of manufacturing a semiconductor device using a metal frame.
FIG. 7 is an explanatory view showing a conventional manufacturing method of a semiconductor device.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Metal base material 11 Resist 12 Resist pattern 13 Resist 14 Recess 16 Metal film 16a Locking part 17 Element mounting part 18 Conductive paste 20 Semiconductor element 22 Bonding wire 24 Resin sealing part 24a Resin bump part 24b Protrusion part 26 External connection terminal 30 punch 40 metal frame

Claims (4)

半導体素子を樹脂封止する樹脂封止部の実装面側に樹脂封止部と一体に複数の樹脂バンプ部が形成され、該樹脂バンプ部の外表面が金属膜により被覆されるとともに、該金属膜の内面と半導体素子の電極端子とがワイヤボンディングされてなる半導体装置において、
前記樹脂バンプ部の基部を被覆する前記金属膜の周縁部が、前記樹脂バンプ部の基部位置から樹脂バンプ部の内側に突出する係止部に形成されていることを特徴とする半導体装置。A plurality of resin bump portions are formed integrally with the resin sealing portion on the mounting surface side of the resin sealing portion for resin-sealing the semiconductor element, and the outer surface of the resin bump portion is covered with a metal film, and the metal In the semiconductor device in which the inner surface of the film and the electrode terminal of the semiconductor element are wire bonded,
The semiconductor device peripheral portion of the metal film covering the base of the resin bump, characterized in that it is formed in the locking portion projecting from the base position of the resin bumps on the inside of the resin bump. 前記係止部が、前記金属膜の周縁部の全周に形成されていることを特徴とする請求項１記載の半導体装置。The semiconductor device according to claim 1, wherein the locking portion is formed on the entire periphery of the peripheral portion of the metal film. 金属基材の一方の面の素子搭載部の近傍に、該素子搭載部に搭載する半導体素子と電気的に接続される外部接続端子の平面配置に合わせて凹部を形成し、
該凹部の内面を前記金属基材を溶解するエッチング液で溶解されない金属からなる金属膜によって被覆した後、
前記凹部の開口縁に潰し加工を施して前記金属膜の周縁部が凹部の内側に突出する係止部を形成し、
該係止部を形成した金属基材の一方の面の素子搭載部に半導体素子を搭載して、
該半導体素子の電極端子と前記金属膜の内面とをワイヤボンディングし、
前記半導体素子、ボンディングワイヤ及び凹部を含む前記金属基材の一方の面側を樹脂封止した後、
前記金属基材を溶解して除去し、前記金属膜を露出させることを特徴とする半導体装置の製造方法。In the vicinity of the element mounting portion on one side of the metal substrate, a recess is formed in accordance with the planar arrangement of the external connection terminals that are electrically connected to the semiconductor element mounted on the element mounting portion,
After coating the inner surface of the recess with a metal film made of a metal that is not dissolved by an etching solution that dissolves the metal substrate,
Periphery of the metal film is subjected to processing crushing the opening edge of the recess to form a locking portion protruding to the inside of the recess,
A semiconductor element is mounted on the element mounting part on one side of the metal base material on which the locking part is formed,
Wire bonding the electrode terminal of the semiconductor element and the inner surface of the metal film;
After resin-sealing one surface side of the metal substrate including the semiconductor element, bonding wire, and recess,
A method of manufacturing a semiconductor device, wherein the metal substrate is dissolved and removed to expose the metal film. 前記凹部の内面に、金めっき、パラジウムめっき、ニッケルめっき及びパラジウムめっきの順にめっきを施して前記金属膜を形成することを特徴とする請求項３記載の半導体装置の製造方法。4. The method of manufacturing a semiconductor device according to claim 3, wherein the metal film is formed on the inner surface of the recess by plating in the order of gold plating, palladium plating, nickel plating and palladium plating.
JP2000180382A 2000-06-15 2000-06-15 Semiconductor device and manufacturing method thereof Expired - Fee Related JP3621869B2 (en)

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