JP3137323B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly, to a leadless surface-mount type and resin-sealed semiconductor device and a method of manufacturing the same. recent years,
With the miniaturization of electronic devices, the pitch of leads provided in a resin-sealed semiconductor device tends to be smaller. Therefore, a new structure and a new manufacturing method are required for a resin-sealed semiconductor device.

[0002]

2. Description of the Related Art FIGS. 22 and 23 are cross-sectional views of a conventional resin-sealed semiconductor device. In FIG. 22, 1
Denotes a resin, 2 denotes a semiconductor element, 3 denotes an outer lead, 4 denotes a bonding wire, and 5 denotes a die pad. This semiconductor device has a package structure called SSOP (Shrink Small Outoline Package).
Are bent in a gull-wing shape and mounted on a substrate.

In FIG. 23, 1 is a resin, 2 is a semiconductor element, 4 is a bonding wire, 6 is a solder ball,
Reference numeral 7 denotes a mounting board on which the chip 2 is mounted. This semiconductor device has a package structure called a BGA (Ball Grid Array), and a terminal portion mounted on a substrate is formed by solder balls 6. However, FIG.
In the SSOP type semiconductor device shown in FIG. 2, the area of the lead portion 9 from the inner lead 8 to the outer lead 3 shown in the resin 1 and the area occupied by the outer lead 3 itself are large, and the mounting area becomes large. There was a point. Further, in the BGA type semiconductor device shown in FIG. 23, there is a problem that the use of the mounting substrate 7 increases the cost.

Accordingly, the applicant has previously proposed Japanese Patent Application No. 7-322803 as a semiconductor device which can solve the above problems. FIG. 24 shows a semiconductor device 110 according to the above application. As shown in FIG.
Has a very simple configuration including a semiconductor element 111, a resin package 112, a metal film 113, and the like.
The present invention is characterized in that a resin film 117 integrally formed on a mounting surface 116 of a resin package 112 is coated with a metal film 113.

[0005] The semiconductor device 110 having the above structure does not require the inner lead and the outer lead as in the conventional SSOP, and does not require the area for routing from the inner lead to the outer lead or the area of the outer lead itself. Thus, the size of the semiconductor device 110 can be reduced. Further, since it is not necessary to use a mounting substrate for forming a solder ball like a conventional BGA, the cost of the semiconductor device 110 can be reduced. Further, the resin protrusion 117 and the metal film 113 cooperate to perform the same function as the solder bump of the BGA type semiconductor device, so that the mountability can be improved.

[0006]

As described above, the semiconductor device 110 can realize various effects which cannot be obtained by the conventional semiconductor device shown in FIGS. 22 and 23. However, since the semiconductor device 110 has a configuration in which the metal film 113 is simply provided so as to cover the resin protrusion 117, sufficient bonding strength can be provided at a bonding portion between the metal film 113 and the resin protrusion 117. It was difficult. For this reason, there is a problem that the metal film 113 is separated from the resin protrusion 117 during, for example, a semiconductor manufacturing process or at the time of mounting, and the reliability of the semiconductor device 110 is reduced.

[0007] On the other hand, in general, in a semiconductor device, identification marking is performed on a resin package in order to identify a 1-pin terminal and to recognize a direction of a package during a manufacturing process. However, in a device such as the semiconductor device 110 in which the package size is reduced, it is difficult to secure an area for imprinting a 1-pin mark (index mark).

It is conceivable to form a concave portion or a convex portion on the upper surface of the resin package 112 and use it as an index mark as an alternative means of this marking.
If the index mark is formed by a concave portion, the wire 118 may be exposed in a miniaturized package. Further, if a configuration is adopted in which a convex portion is formed on the upper surface of the resin package 112 in order to prevent exposure of the wire 118,
The thickness of the semiconductor device 110 is substantially increased by the height of the projection, which is contrary to the demand for thinning the semiconductor device 110.

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and it is an object of the present invention to provide a semiconductor device and a method of manufacturing the same, in which reliability is improved by securely joining a metal film and a resin protrusion. Aim. Another object of the present invention is to provide a semiconductor device capable of identifying terminals (metal films) while reducing the thickness.

[0010]

The above objects can be attained by taking the following means. Claim 1
In the semiconductor device according to the described invention, the semiconductor element, a resin package for sealing the semiconductor element, a resin protrusion protrudingly formed on a mounting side surface of the resin package, and a metal film disposed on the resin protrusion. Connecting means for electrically connecting an electrode pad on the semiconductor element to the metal film, forming an anchor portion which bites into the resin package on a part of the metal film , and
The height of the resin protrusion is set on the surface on which the metal film is disposed.
Formed on the lower surface, and forms an identification protrusion for identifying the metal film.
It is characterized by having achieved .

[0011]

[0012] In the invention of claim 2, wherein wherein
Item 2. The semiconductor device according to Item 1 , wherein a metal film made of the same material as that provided on the resin protrusion is formed on the identification protrusion. Claim 3
In the described invention, a lead frame forming step of forming a lead frame in which a metal film is formed in a concave portion, an element mounting step of mounting a semiconductor element on the lead frame, and an electrode pad formed on the semiconductor element, A connection step of electrically connecting the metal film formed on the lead frame, a sealing step of forming a resin on the lead frame to seal the semiconductor element and forming a resin package, A method of manufacturing a semiconductor device, comprising: a separation step of separating the resin package from the lead frame together with the metal film, wherein the lead frame forming step includes a step of applying an etching resist to both surfaces of a base material, A resist for forming a predetermined resist pattern by removing a portion of the etching resist corresponding to the concave portion forming position A pattern forming step, a first etching step of forming a recess in the recess forming position of the substrate,
A metal film forming step of forming a metal film in the concave portion formed in the first etching step, and etching a surface of the substrate surface on the concave portion forming side, wherein a part of the metal film is removed from the substrate surface The method is characterized by including a second etching step of forming a protrusion and a resist removing step of removing the etching resist.

[0013] Further, according to the invention described in claim 4 , the above-mentioned claim is provided.
Item 3. The method of manufacturing a semiconductor device according to Item 3 , wherein, in the first etching step, a hole for forming an identification projection for identifying the metal film is formed simultaneously with the formation of the recess. Things.

Each of the above-mentioned means operates as follows.
According to the first aspect of the present invention, the anchor portion that cuts into the resin package is formed in a part of the metal film.
The bonding force between the metal film and the resin package is increased, so that the metal film can be prevented from peeling from the resin protrusion.

[0015] Further , since the identification protrusion for identifying the metal film is formed on the surface of the resin package on which the metal film is provided, the identification protrusion can be used as an index mark, and the recognition of the metal film (terminal) can be performed. It can be performed.
In addition, since the height of the identification protrusion is formed to be lower than the height of the resin protrusion, the height of the semiconductor device does not increase by forming the identification protrusion, and the internal structure is exposed. There is no such thing.

According to the second aspect of the present invention, since the metal film is formed on the identification projection by the metal film, the metal film has a metallic luster. It can be carried out. In addition, since the metal film formed on the identification protrusion is made of the same material as that provided on the resin protrusion, it is possible to collectively form the metal film on the identification protrusion and the resin protrusion.

According to the third aspect of the present invention, the first
Forming a concave portion in the concave portion forming position of the base material in the etching step, forming a metal film in the concave portion formed in the first etching step in the subsequent metal film forming step, and further performing the second etching By etching the surface of the substrate surface on the side of the concave portion in the process, a part of the metal film has a configuration protruding from the substrate surface. Therefore, by performing a sealing process on the lead frame having this configuration to form a resin package, a portion of the metal film protruding from the base material surface is in a state of being cut into the resin package, and thus, the metal film is formed by resin protrusion. Can be prevented from coming off.

Further, according to the fourth aspect of the present invention, the first
In the etching step, a hole for forming an identification projection for recognizing the metal film is formed at the same time as the formation of the recess, so that the metal film is collectively formed in both the recess and the hole in the metal film forming step. Therefore, the manufacturing process can be simplified.

[0019]

Embodiments of the present invention will now be described with reference to the drawings. 1 to 3 show a semiconductor device 10 according to one embodiment of the present invention. 1 shows a cross section of the semiconductor device 10, FIG. 2 shows a bottom surface of the semiconductor device 10, and FIG. 3 is a plan view showing a resin package to be described later in a see-through manner.

The semiconductor device 10 has a very simple structure consisting of a semiconductor element 11, a resin package 12, and a metal film 13. The semiconductor element 11 has a configuration in which a plurality of electrode pads 14 are formed on an upper surface thereof and is mounted on an element fixing resin 15. The resin package 12 is formed by molding (potting is also possible) an epoxy resin, for example, as described later.
The mounting surface 16
The resin projection 17 and the identification projection 19 are integrally formed at a predetermined position. The arrangement pitch of the resin protrusions 17 is
For example, it can be about 0.8 mm.

The metal film 13 functions as an external connection terminal, and is formed so as to cover the resin protrusion 17 formed on the resin package 12. This metal film 1
A wire 18 is provided between the metal film 13 and the semiconductor element 11.
Are electrically connected. The identification projection 19 functions as an index mark,
The formation position is selected in the vicinity of the metal film 13 to be a one-pin terminal. Therefore, it is possible to identify the one-pin terminal and to recognize the direction of the package during the manufacturing process by using the identification protrusion 19.

The protrusion (height) of the identification protrusion 19 is configured to be lower than the height of the resin protrusion 17. Therefore, by forming the identification protrusion 19, the semiconductor device 1
The height of 0 does not increase, and the internal structure (such as the wire 18) does not become exposed. Further, a metal film 13A (hereinafter, referred to as an identification metal film) is provided on the surface of the identification protrusion 19. Thus, the identification protrusion 1
By forming the discrimination metal film 13A on the surface of No. 9, since the discrimination metal film 13A has a metallic luster, recognition of the discrimination protrusion 19 can be easily performed as compared with a configuration using only a resin.

The identification metal film 13A is
And the same material as that of the metal film 13 provided in the first substrate. Therefore, as described later, the metal film 13 and the identification metal film 13
A can be collectively formed on the identification protrusion 17 and the resin protrusion 19, and even if the identification metal film 13 </ b> A is formed on the resin protrusion 17, the manufacturing process of the semiconductor device 10 is unnecessarily complicated. There is no.

Here, paying attention to the upper end of the metal film 13, the predetermined range of the upper end of the metal film 13 is
2 is buried inside. In particular,
The upper end portion of the metal film 13 is cut into the resin package 12 more than the position of the mounting surface 16 (hereinafter, the metal film 13 is cut into the resin package 12 more than the position of the mounting surface 16). The part is called an anchor part 41).

The above-mentioned metal film 13 and identification metal film 1
3A may be formed by a single metal layer, or may be formed by laminating a plurality of metal layers. The semiconductor device 10 having the above configuration does not require the inner lead and the outer lead as in the conventional SSOP, and does not require an area for routing from the inner lead to the outer lead or the area of the outer lead itself. 10
Can be reduced in size.

In addition, since it is not necessary to use a mounting substrate for forming a solder ball like a conventional BGA,
The cost of the semiconductor device 10 can be reduced. In addition, the resin protrusion 17 and the metal film 13 cooperate to perform the same function as the solder bump of the BGA type semiconductor device, so that the mountability can be improved. Further, since the anchor portion 41 that cuts into the resin package 12 is formed in a part of the metal film 13 as described above, the bonding strength between the metal film 13 and the resin package 12 increases. Therefore, it is possible to prevent the metal film 13 from peeling off from the resin protrusion 17, thereby improving the reliability of the semiconductor device 10.

Next, a method of manufacturing the semiconductor device 10 according to the first embodiment will be described. Semiconductor device 10
Is manufactured using the lead frame 20 shown in FIG. The lead frame 20 is made of a conductive metal substrate 2
1, a plurality of recesses 22 and a bottomed hole 23 are formed, a metal film 13 is formed in the recessed portion 22, and an identification metal film 13A is formed in the bottomed hole 23.

The position where the concave portion 22 is formed is configured to correspond to the position where the resin protrusion 17 formed on the semiconductor device 10 is formed, and the metal film 13 is formed so as to fit into the resin protrusion 17. Further, the bottomed hole portion 23 is formed at a position near the metal film 13 serving as a 1-pin terminal. The depth of the bottomed hole 23 is set to be smaller than the depth of the recess 22.

As will be described later, the lead frame 20
Is configured so that a plurality of semiconductor devices 10 can be formed at a time (that is, so-called a plurality of semiconductor devices can be formed). Therefore, the concave portion 22, the metal film 13, the bottomed hole portion 23, and the identification metal film 13A are also one. A plurality of sets are formed on a single metal base 21 (see FIG. 7). First, the manufacturing process of the lead frame 20 in the manufacturing process of the semiconductor device 10 will be described with reference to FIGS.

To manufacture the lead frame 20, first, as shown in FIG. 4, a flat metal base 21 made of a conductive material (for example, copper) is prepared, and etching resists are formed on both upper and lower surfaces of the metal base 21. 24 (resist coating step). The etching resist 24 is, for example, a photosensitive resin and is applied to a predetermined thickness using a spinner or the like.

Subsequently, an exposure process is performed on the etching resist 24 using a mask (not shown), and thereafter a development process is performed to remove portions of the etching resist 24 corresponding to the concave portion forming position and the jig hole forming position, A resist pattern 24a shown in FIG. 5 is formed (resist pattern forming step). Further, in this embodiment, in the resist pattern forming step, the etching resist 24 provided at a position corresponding to the formation position of the power supply unit 25 (power supply unit formation position) is also removed. The power supply 25
Is a portion where a plating electrode is provided in a metal film forming step described later (see FIG. 7).

When the resist pattern forming step is completed,
A first etching process is performed on the metal base 21 on which the resist pattern 24a has been formed (first etching process). In the first etching step, half-etching is performed only from the upper surface of the metal base 21 at the position where the concave portion 22 is formed, the position where the bottomed hole 23 is formed, and the position where the power supply portion is formed. When copper (Cu) is used as the material of the metal substrate 21, for example, ferric chloride or the like is used as the etchant.

As a result, as shown in FIG. 6, a concave portion 22 is formed at the position where the concave portion of the metal base 21 is formed, and a bottomed hole portion 23 is formed at the position where the identification projection 19 is formed. As shown in FIG. 7, a concave power supply section 25 is formed at the power supply section formation position of the metal base 21. At this time, the concave portion 22 formed by the first etching process
Can be about 60% of the thickness of the metal base 21.

Since the opening area of the bottomed hole portion 23 is smaller than the opening area of the concave portion 22, the etching rate at the time of etching is small. Therefore, at the end of the first etching step, as described above, The depth of the hole 23 is
It becomes shallower than the depth of the recess 22. Thus, the bottomed hole 2
The relationship between the depth of 3 and the depth of the concave portion 22 automatically becomes different even if no means is provided in the first etching step.

On the other hand, the power supply portions 25 are formed at both ends in the longitudinal direction of the metal base member 21, respectively.
In this state, the metal base 21 made of a conductive metal is exposed. For this reason, by disposing the plating electrode in the power supply unit 25, it is possible to apply a predetermined potential to the metal base 21. FIG. 7B is a cross-sectional view taken along line AA in FIG. 7A.

Although a rectangular dashed line indicated by an arrow B in FIG. 7 indicates a region where one semiconductor device 10 is formed, as shown in FIG. (FIG. 7
In this example, 34 semiconductor devices 10 are formed at a time (so that a large number of semiconductor devices can be obtained). Accordingly, when a set of a plurality of recesses 22 corresponding to one semiconductor device 10 is set as one set, one metal base 21 is formed.
Are formed with a plurality of sets of concave portions 22.

When the first etching step is performed as described above, a metal film forming step is subsequently performed, and the metal film 13 is formed.
And an identification metal film 13A. In the present embodiment, a plating method is used to form the metal film 13 and the discrimination metal film 13A. A plating electrode is provided in the power supply unit 25, and the metal substrate 21 is immersed in a plating tank. Electroplating is performed. The thickness of the metal film 13 can be arbitrarily set by controlling the plating time.
FIG. 8 shows the metal substrate 21 on which the metal film 13 and the identification metal film 13A are formed.

By performing the above processing, the metal film 1
3 and the discriminating metal film 13A are formed on the metal substrate 21. In the separation step, as will be described later, the metal substrate 2
When the resin package 12 is separated from the lead frame 20, the metal film 13 and the identification metal film 13A formed together with the resin package 12 need to be separated from the lead frame 20. For this reason, the metal film 13 and the discrimination metal film 13A are required to have a certain degree of separation from the metal base material 21.

Therefore, prior to forming the metal film 13 in the concave portion 22 and forming the identification metal film 13A in the bottomed hole portion 23, the inside of the concave portion 22 and the bottomed hole portion 2 are secured in order to secure the above-mentioned separability.
3 is coated with a material such as a conductive paste for improving the separability, and a metal film 13 and an identification metal film 13 are formed thereon.
A may be formed. In the above-described metal film forming step, the method of forming the metal film 13 and the identification metal film 13A using the plating method has been described.
The formation of 3A is not limited to the plating method, and may be a structure formed by using another film forming technique such as a vapor deposition method or a sputtering method.

When the metal film 13 and the discrimination metal film 13A are formed in the metal film forming step as described above, the metal film 13 and the discrimination metal film 13A are located at the upper part in the figure (that is, the inside of the recess 22 and the bottomed hole 23
A resist removing step (first resist removing step) of removing only the resist pattern 24a (located on the side where the resist is formed) is performed, and the lead frame 20 shown in FIG. 9 is formed.

Subsequently, as shown in FIG. 10, a second etching step is performed on the surface where the metal base 21 is exposed by removing the resist pattern 24a. In the second etching step, half etching is performed on the metal base 21. The etching solution used in the second etching process is such that only the metal base 21 is etched, and the metal film 13 and the identification metal film 13A are etched.
Are not etched. Therefore, when the second etching step is completed,
As shown in FIG. 11, the metal film 13 and the identification metal film 1
3A is in a state of protruding from the upper surface of the metal base 21. At this time, the metal substrate 21 of the metal film 13 and the identification metal film 13A is used.
Can be arbitrarily set by controlling the etching time and the like.

As described above, when the metal film 13 and the discrimination metal film 13A are formed so as to protrude from the upper surface of the metal base 21 in the second etching step, subsequently, the resist for removing the resist pattern 24a located at the lower part in the figure is removed. The removal step (second resist removal step) is performed, and the lead frame 20 shown in FIG. 12 is formed. When the lead frame 20 is formed as described above, the element fixing resin 15 is applied to a predetermined element mounting position of the lead frame 20 as shown in FIG. Is mounted (element mounting process). The element fixing resin 15 has an insulating property and functions as an adhesive,
Therefore, the semiconductor element 11 is mounted on the lead frame 20 by the adhesive force of the element fixing resin 15.

When the element mounting step is completed, the lead frame 20 is mounted on a wire bonding apparatus, and as shown in FIG. 14, the electrode pads 14 formed on the semiconductor element 11 and the metal pads formed on the lead frame 20 are formed. A wire 18 is arranged between the film 13 and the semiconductor element 11 and the metal film 13 are electrically connected (connection step). When wire bonding the wire 18 between the electrode pad 14 and the metal film 13, in the example shown in FIG. 14, one end of the wire 18 is first bonded to the electrode pad 14 (first bonding), and then the wire 18 is bonded. A method of bonding the other end to the metal film 13 (second bonding) was employed.

However, as shown in FIG. 15, first, one end of a wire 18 is connected to the metal film 13 and then the metal film 13 is connected.
A method may be employed in which the wire 18 is drawn out to the electrode pad 14 and the other end of the wire 18 is connected to the electrode pad 14. As described above, first, the wire 1 is formed on the metal film 13.
8 is connected, and then the other end of the wire 18 is connected to the electrode pad 14 by using a so-called reverse wire bonding method, whereby the height of the wire loop can be reduced. The height of the semiconductor device 10 can be reduced.

In general, the arrangement pitch of the electrode pads 14 is narrower than the arrangement pitch of the metal films 13, and the bonding region of the first bonding in the wire bonding process is wider than the bonding region of the second bonding. Therefore, the first bonding is performed on the metal film 13 having a large arrangement pitch, and the second bonding is performed on the electrode pad 14 having a small arrangement pitch, whereby the wires 18 can be arranged with high density. .

When the above connection step is completed, a sealing step of forming a resin 29 on the lead frame 20 so as to seal the semiconductor element 11 and forming the resin package 12 is performed. In the present embodiment, a method of molding the resin package 12 will be described, but the resin package 12 may be formed by botting. FIG. 16 is a schematic configuration diagram showing a state immediately after the lead frame 20 after the connection step is mounted on a mold and resin 29 (shown in satin) is molded, where 30 is a cull, 31 is a runner, and 32 is a runner.
Indicates the respective gates. As shown in the figure, a plurality of resin packages 12 are collectively formed on a lead frame 20. In a state immediately after the molding, the plurality of resin packages 12 formed are connected by a resin 29 (hereinafter, referred to as a resin in the gate) existing in the gate 32.

FIG. 17 is an enlarged view showing the resin package 12 corresponding to one semiconductor device. As shown in the figure, the resin 29 is formed in a predetermined shape by a cavity (not shown) formed in a mold (upper die), and the lead frame 20 functions as a lower die, and The resin 29 is also filled inside 22 (specifically, inside the metal film 13) to form the resin protrusion 17. At the same time, the resin 29 also fills the inside of the bottomed hole 23 (specifically, the inside of the identification metal film 13A), and
To form In this state, the resin package 12 is attached to the lead frame 20.

As described above, in this embodiment, the metal film 13 and the discrimination metal film 13A are in a state of protruding from the surface of the lead frame 20, and the resin package 12 has the lead frame 20 as a lower mold. It is formed.
Therefore, when the resin package 12 is formed, the portions of the metal film 13 and the identification metal film 13A protruding from the lead frame surface (hereinafter, these portions are referred to as anchor portions 41, 41).
A) is in a state of being cut into the resin package 12.

Therefore, the anchor portions 41 and 41A have an anchor effect on the resin package 12, whereby the resin package 12 and the metal film 13 and the identification metal film 13A
Can be increased. When the resin package 12 is formed as described above, each resin package 1
The resin in the gate formed between the two, the resin remaining in the runner 31, and the cutting 30 are removed, and each resin package 12 has an independent configuration as shown in FIG. However, as described above, each resin package 12
Is attached to the lead frame 20, so that each resin package 12
Is not separated from the lead frame 20.

When the above sealing step is completed, a tape arranging step is subsequently performed. In the tape installation process,
As shown in FIG. 9, a tape member 33 such as an adhesive tape is provided on the upper part of each resin package 12 which is in an independent state.
(Indicated by hatching). The tape member 33 has a configuration in which an adhesive is applied to one surface of a base tape, and the base tape is formed of a material that is not damaged by an etchant used in a separation process performed later. As described above, by connecting the upper portions of the plurality of resin packages 12 with the tape member 33, even if each resin package 12 is separated from the lead frame 20, the position of each resin package 12 can be regulated by the tape member 33. it can.

The timing at which the tape member 33 is disposed is not limited to the timing after the resin package 12 is formed. For example, the timing at which the tape member 33 is disposed in the mold before the encapsulation step is performed. A plurality of resin packages 12 may be connected by a tape member 33 when formed. When the above-described tape arranging step is completed, subsequently, a separating step of separating the resin package 12 from the lead frame 20 and forming the semiconductor device 10 is performed. FIG. 20 shows a separation step. In the example shown in FIG. 20, the lead frame 20 is immersed in an etching solution to dissolve the resin package 12 so that the resin
The method of separating from the target is shown.

As the etching solution used in this separation step, an etching solution having a property of dissolving only the lead frame 20 and not dissolving the metal film 13 and the discrimination metal film 13A is selected. Therefore, the resin package 12 is separated from the lead frame 20 by completely dissolving the lead frame 20. At this time, since the metal film 13 and the identification metal film 13A are in a state where the anchor portions 41 and 41A are buried in the resin package 12, the metal film 13 and the identification metal film 13A are disposed on the resin protrusion 17 side. Thus, the semiconductor device 10 shown in FIG. 1 is formed.

As described above, by dissolving the lead frame 20, the resin package 12 is connected to the lead frame 2.
By using the method of separating from the lead frame 20, the separation process of the resin package 12 from the lead frame 20 can be performed reliably and easily, and the yield can be improved. Further, the bonding force between the metal film 13 and the identification metal film 13A and the resin package 12 is increased by the anchor portions 41 and 41A formed on the metal film 13 and the identification metal film 13A. 17 and the identification metal film 13 </ b> A can be securely disposed on the identification protrusion 19.

FIG. 21 shows the semiconductor device 10 after the separation step has been completed. As shown in the drawing, the plurality of semiconductor devices 10 maintain the state of being bonded to the tape member 33 at the time when the separation step is completed. Therefore, handling of the semiconductor device 10 after the separation step is completed can be facilitated. Further, by winding and shipping the tape member 33 in the state shown in FIG. 21, it becomes possible to automatically load the semiconductor device 10 onto the mounting board at the time of mounting similarly to the case of the chip component.

Further, in the above-described manufacturing method, the step of cutting the lead and the step of forming the lead into a predetermined shape (for example, a gull wing shape), which are conventionally required, are unnecessary, and the manufacturing process of the semiconductor device 10 can be simplified. Can be.

[0056]

According to the present invention as described above, the following various effects can be realized. Claim 1 and Claim 3
According to the described invention, the bonding force between the metal film and the resin package is increased, so that the metal film can be reliably prevented from peeling from the resin protrusion.

Further, according to the first aspect of the present invention, the identification projection can be used as an index mark, so that the metal film (terminal) can be recognized, and the height of the identification projection can be reduced. Since it is formed to be lower than the height, it is possible to prevent the height of the semiconductor device from increasing due to the formation of the identification protrusion. In addition, 請
According to the invention described in claim 2 , since the metal film is formed on the identification protrusion, the metal film has a metallic luster, so that the identification protrusion can be easily recognized. In addition, since the metal film formed on the identification protrusion is made of the same material as that provided on the resin protrusion, it is possible to collectively form the metal film on the identification protrusion and the resin protrusion.

[0058] Further, according to the fourth aspect of the present invention, it is possible to form a lump of metal films on both the concave and the hole in the metal film forming step, thus it is possible to simplify the manufacturing process .

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a semiconductor device according to one embodiment of the present invention.

FIG. 2 is a bottom view of the semiconductor device according to one embodiment of the present invention.

FIG. 3 is a perspective view of a semiconductor device according to an embodiment of the present invention.

FIG. 4 is a view for explaining a lead frame forming step in the method of manufacturing a semiconductor device according to one embodiment of the present invention (resist coating step).

FIG. 5 is a view for explaining a lead frame forming step (resist pattern forming step).

FIG. 6 is a view for explaining a lead frame forming step (etching step).

FIG. 7 is a diagram for explaining a power supply unit formed on a lead frame.

FIG. 8 is a view for explaining a lead frame forming step (metal film forming step).

FIG. 9 is a view for explaining a lead frame forming step (first resist stripping step).

FIG. 10 is a view for explaining a lead frame forming step (first etching step).

FIG. 11 is a view showing the lead frame in a state where the first etching step has been completed;

FIG. 12 is a view for explaining a lead frame forming step (second resist stripping step).

FIG. 13 is a view for explaining one embodiment of a method of manufacturing a semiconductor device (element mounting step).

FIG. 14 is a view illustrating an example of a method for manufacturing a semiconductor device (connection step).

FIG. 15 is a view for explaining a modification of the connection step in the method for manufacturing a semiconductor device.

FIG. 16 is a diagram for explaining one embodiment of a method for manufacturing a semiconductor device (sealing step).

FIG. 17 is a cross-sectional view showing the lead frame after the sealing step has been completed.

18A and 18B are a plan view and a side view showing the lead frame after the sealing step has been completed.

FIG. 19 is a diagram for explaining one embodiment of a method for manufacturing a semiconductor device (tape disposing step).

FIG. 20 is a diagram for explaining one embodiment of a method for manufacturing a semiconductor device (second etching step).

21A and 21B are a plan view and a side view showing the semiconductor device after the sealing step has been completed.

FIG. 22 is a diagram illustrating an example of a conventional semiconductor device.

FIG. 23 is a diagram illustrating an example of a conventional semiconductor device.

FIG. 24 is a diagram illustrating an example of a conventional semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Semiconductor device 11 Semiconductor element 12 Resin package 13 Metal film 13A Identification metal film 14 Electrode pad 17 Resin projection 18 Wire 19 Identification projection 20 Lead frame 21 Metal substrate 22 Depression 23 Bottom hole 24 Etching resist 24a Resist pattern 25 Feeding part 26 Frame-shaped part 27 Connecting part 28 Lead frame unit 33 Tape member 34 Runner frame 41, 41A Anchor part

──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Takashi Nomoto 4-1-1, Kamidadanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture Inside Fujitsu Limited (72) Eiji Eiji Sakota 4-chome, Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture No. 1-1 Inside Fujitsu Limited (72) Inventor Seiichi Orimo 4-1-1 Kamikadanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture Inside Fujitsu Limited (56) References JP-A-7-226475 (JP, A) (58) Field surveyed (Int. Cl. ⁷ , DB name) H01L 23/50

Claims (4)

(57) [Claims] 1. A semiconductor device, a resin package for encapsulating the semiconductor device, and a resin protrusion protruding from a mounting side surface of the resin package.
Electrically connecting the metal film disposed on the resin protrusion to the electrode pad on the semiconductor element and the metal film.
Connection means for connecting to a part of the metal film and biting into the resin package.
Form anchor partAnd And a surface of the resin package on which the metal film is provided.
The metal film is formed to be lower than the height of the resin protrusion.
A semi-conductor characterized by forming an identification protrusion for identifying
Body device. 2. The semiconductor device according to claim 1, wherein the same material is provided on the identification protrusion as the resin protrusion.
Semiconductor formed by coating a metal film comprising
apparatus. 3. A lead frame having a metal film formed in a recess.
Forming a lead frame, and mounting a semiconductor element on the lead frame.
And an electrode pad formed on the semiconductor element, and the lead
Electrical connection with the metal film formed on the frame
Connecting the semiconductor element onto the lead frame.
Forming a resin and forming a resin package; and sealing the resin package from the lead frame to the metal.
Manufacturing a semiconductor device having a separation step of separating with a film
A lead coating step , wherein the lead frame forming step includes applying an etching resist to both surfaces of the base material.
Process and a portion corresponding to the concave portion forming position of the etching resist
That removes and forms a predetermined resist pattern
A pattern forming step, and a first etch for forming a concave portion at a concave portion forming position of the base material.
And ring step, said first recess formed in the etching step, the metal
And the metal film type formed to form a film, the surface of the recess forming side of the substrate surface by etching, the metal
A second edge formed so that a part of the film protrudes from the substrate surface.
And a resist for removing the etching resist
Manufacturing a semiconductor device, comprising:
Method. 4. A method for manufacturing a semiconductor device according to claim 3, wherein
In the first etching step, the metal film is identified at the same time as the formation of the concave portion.
Characterized by forming a hole for forming an identification protrusion
A method for manufacturing a semiconductor device.