JP3605651B2 - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device Download PDF

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Publication number
JP3605651B2
JP3605651B2 JP27850998A JP27850998A JP3605651B2 JP 3605651 B2 JP3605651 B2 JP 3605651B2 JP 27850998 A JP27850998 A JP 27850998A JP 27850998 A JP27850998 A JP 27850998A JP 3605651 B2 JP3605651 B2 JP 3605651B2
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adhesive
wafer
dianhydride
bis
film
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JP2000104040A (en
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真二郎 藤井
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Showa Denko Materials Co Ltd
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Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Description

【０００１】
【発明の属する技術分野】
本発明は、ダイボンディング用接着剤及びそれを用いた半導体装置の製造方法に関する。
【０００２】
【従来の技術】
従来、半導体素子のダイボンディング（半導体素子のリードフレームヘの接合）方法としては、リードフレーム上のタブ部分にダイボンド材料を供給しその上に半導体素子を載せ接着する方法が用いられてきた。これらのダイボンディング材料としては、例えばＡｕ−Ｓｉ共晶、半田、樹脂ペーストなどが知られている。これらダイボンディング材料のうち現在樹脂ペーストを用いるダイボンディング方法が多用されている。樹脂ペーストをリードフレームに供給する方法としては、スタンピング方式、ディスペンシング方式、スクリーン印刷方式が採用されているが、ディスペンシング方式が最もよく使われている。ディスペンシング方式は、シリンジ内に樹脂ペーストを充填し、ディスペンサーと呼ばれる装置による気圧でペーストをタブ上に吐出する方法である。
しかしながら、当該法では半導体素子が大きくなるに従って樹脂ペーストをタブ全面に均」に塗布することが難しいという欠点があり、又樹脂ペーストを用いた場合、硬化時接着層にボイドが発生するという問題もある。
【０００３】
一方、これらのペーストの欠点を避ける手法としてはフィルム状の接着剤を用いる方法として、特開昭６３−２８９８２２号公報、特開平１−１９７３５号公報に示されているが、素子のサイズに応じてフィルムを切断しなければならないこと、また、切断フィルムを位置ずれしないように貼り付ける専用の高価な装置が必要となる問題がある。
【０００４】
さらに、この問題を解決する手法として、特開平６−３０２６２９号公報には、次のような方法が開示されている。まず、キャリアフィルム上に接着剤を膜状に塗布乾燥し、離型フィルムをかぶせて接着剤付きキャリアーシートを作成し、離型フィルムをはがしてウエハの裏面にキャリアーシート上の接着剤を熱転写して、接着剤付きウエハとする。接着剤付きウエハをダイシングテープ上に貼り付けた後、ダイシングをして接着剤付き半導体素子に分割する。接着剤付き半導体素子をダイシングテープから引き剥がしてリードフレームに熱圧着し、半導体素子をリードフレームに接着させる。
【０００５】
しかしながら、本方法によれば、第１に、熱転写する温度は、キャリアフィルムの耐熱温度以上に設定できないため、接着剤をウエハに熱転写する温度が制限される問題がある。第二に、接着剤を熱転写する際、接着剤と積層しているキャリアフィルムが熱収縮するためウエハに大きな反りが生じる問題がある。反りが大きいとダイシングテープとの接着性の低い部分を生じやすく、ダイシングの際、半導体素子がダイシングテープより剥離してしまう。特に反りの生じやすい３００μｍ以下のウエハなどに適用できるものを得ることは困難であった。
【０００６】
【発明が解決しようとする課題】
請求項１記載の発明は、３００μｍ以下のウェハでもクラックが発生せず、反りは小さく、また、幅広い温度で接着剤をウェハに接着できる接着剤を用いた半導体装置の製造方法を提供するものである。
【０００７】
【課題を解決するための手段】
本発明は、ガラス転移温度９０℃以下の熱可塑性ポリイミド樹脂と熱硬化性樹脂を含有してなるダイボンディング用接着剤に関する。
本発明は、また、多数の半導体素子が形成されたウエハ裏面に、ガラス転移温度８０℃以下の熱可塑性ポリイミド樹脂と熱硬化性樹脂からなるフィルム状単層接着剤を熱圧着して接着剤付ウエハとし、得られた接着剤付ウエハをダイシングテープに貼り付け固着して個別半導体素子に分割切断後、前記ダイシングテープを剥離して得られる接着剤付き半導体素子を支持部材にダイボンディングすることを特徴とする半導体装置の製造方法に関する。
【０００８】
【発明の実施の形態】
以下、図１、図２により本発明の実施形態を説明する。
図１はフィルム状単層接着剤をウエハ裏面に接着する工程からダイシングして接着剤付半導体素子とする工程の説明図である。図２はダイシングして接着剤付半導体素子をリードフレームタブ部に接着し、半導体装置を製造する工程の説明図である。
【０００９】
図１において、接着剤１がポリエステルフィルム、ポリプロピレンフィルム等のキャリアフィルム２に積層され、ベースフィルム付接着フィルム３とされている（ａ）。単層接着剤は、このベースフィルム付接着フィルム３から、使用時にキャリアフィルム２を剥離することにより得られる。ベースフィルム付接着フィルム３は例えば、次のように作製される。まず、ポリイミド樹脂と熱硬化性樹脂を有機溶剤に溶解する。ここで用いられる有機溶媒は、均一に溶解又は混練できるものであれば特に制限はない。ついで、必要に応じ添加剤を加え、混合する。こうして得たワニスを、例えば、ポリエステル製シート等のキャリアフィルム２の上に均一に塗布し、使用した溶媒が十分に揮発する条件、すなわち、おおむね６０〜２００℃の温度で、０．１〜３０分間加熱される。
【００１０】
次いで、接着剤１をウェーハ４にヒート付ロール５を用いて熱板６と挟み込むようにして加圧加熱し、およそ、６０℃から２００℃の温度で０．１〜１０分間加熱し（ｂ）、接着剤付きウェーハを得る（ｃ）。接着剤付きウエハの接着剤１側にダイシングテープ７を貼付け（ｄ）、ダイシングし、接着剤付き半導体素子８に分割する（ｅ）。分割は、公知のウエハ用カッターを用いて行うことができる。
【００１１】
図２において、接着剤付き半導体素子８をダイシングテープ７から吸引コレット９及び突き上げコレット１０を用いて引き剥がし（ｆ）、接着剤付き半導体素子８を吸引コレット９で吸引しつつ運搬して（ｇ）、支持部材、例えばリードフレーム１１上のダイパット部１２に載せ、次いで、圧着し、ヒートブロック１３上で後硬化して接着し、更に、ワイヤーボンディングし（ｈ）、そして、樹脂１４で封止して半導体装置とする（ｉ）。
【００１２】
本発明において用いられる接着剤としては、例えば、ガラス転移温度（Ｔｇ）が９０℃以下の熱可塑性ポリイミド樹脂とエポキシ樹脂などの熱硬化性樹脂の混合物を主体としたものが使用され、適宜、無機フィラー等の添加剤が混合される。
【００１３】
本発明において、熱可塑性ポリイミド樹脂のＴｇは９０℃以下であるが、３０〜８０℃であることが好ましい。熱可塑性ポリイミド樹脂のＴｇが高すぎると本発明の効果が低下し、低すぎると接着剤の表面が粘着性を示すようになる。本発明の熱可塑性ポリイミド系樹脂は常温では粘着性がないものが好ましい。
上記の熱可塑性ポリイミド樹脂は、テトラカルボン酸二無水物とジアミンとを反応させて得ることができ、熱可塑性を有するものが選択して使用される。
【００１４】
このようなポリイミド樹脂の製造に用いられるテトラカルボン酸二無水物としては、１，２−（エチレン）ビス（トリメリテート二無水物）、１，３−（トリメチレン）ビス（トリメリテート二無水物）、１，４−（テトラメチレン）ビス（トリメリテート二無水物）、１，５−（ペンタメチレン）ビス（トリメリテート二無水物）、ｎが６〜２０のとき、１，６−（ヘキサメチレン）ビス（トリメリテート二無水物）、１，７−（ヘプタメチレン）ビス（トリメリテート二無水物）、１，８−（オクタメチレン）ビス（トリメリテート二無水物）、１，９−（ノ ナメチレン）ビス（トリメリテート二無水物）、１，１０−（デカメチレン）ビス（トリメリテート二無水物）、１，１２−（ドデカメチレン）ビス（トリメリテート二無水物）、１，１６−（ヘキサデカメチレン）ビストリメリテート二無水物、１，１８−（オクタデカメチレン）ビス（トリメリテート二無水物）、ピロメリット酸二無水物、３，３′，４，４′−ジフェニルテトラカルボン酸二無水物、２，２′，３，３′−ジフェニルテトラカルボン酸二無水物、２，２−ビス（３，４−ジカルボキシフェニル）プロパン二無水物、２，２−ビス （２，３−ジカルボキシフェニル）プロパン二無水物、１，１−ビス（２，３−ジカルボキシフェニル）エタン二無水物、１，１−ビス（３，４−ジカルボキシフェニル）エタン二無水物、ビス（２，３−ジカルボキシフェニル）メタン二無水物、ビス（３，４−ジカルボキシフェニル）メタン二無水物、ビス（３，４−ジカルボキシフェニル）スルホン二無水物、３，４，９，１０−ペリレンテトラカルボン酸二無水物、ビス（３，４−ジカルボキシフェニル）エーテル二無水物、ベンゼン−１，２，３，４−テトラカルボン酸二無水物、３，４，３′，４′−ベンゾフェノンテトラカルボン酸二無水物、２，３，２′，３−ベンゾフェノンテトラカルボン酸二無水物、２，３，３′，４′−ベンゾフェノンテトラカルボン酸二無水物、１，２，５，６−ナフタレンテトラカルボン酸二無水物、２，３，６，７−ナフタレンテトラカルボン酸二無水物、１，２，４，５−ナフタレン−テトラカルボン酸二無水物、１，４，５，８−ナフタレン−テトラカルボン酸二無水物、２，６−ジクロルナフタレン−１，４，５，８−テトラカルボン酸二無水物、２，７−ジクロルナフタレン−１，４，５，８−テトラカルボン酸二無水物、２，３，６，７−テトラクロルナフタレン−１，４，５，８−テトラカルボン酸二無水物、フエナンスレン−１，８，９，１０−テトラカルボン酸二無水物、ピラジン−２，３，５，６−テトラカルボン酸二無水物、チオフエン−２，３，４，５−テトラカルボン酸二無水物、２，３，３′，４′−ビフェニルテトラカルボン酸二無水物、３，４，３′，４′−ビフェニルテトラカルボン酸二無水物、２，３，２′，３′−ビフェニルテトラカルボン酸二無水物、ビス（３，４−ジカルボキシフェニル）ジメチルシラン二無水物、ビス（３，４−ジカルボキシフェニル）メチルフェニルシラン二無水物、ビス（３，４−ジカルボキシフェニル）ジフェニルシラン二無水物、１，４−ビス（３，４−ジカルボキシフェニルジメチルシリル）ベンゼン二無水物、１，３−ビス（３，４−ジカルボキシフェニル）−１，１，３，３−テトラメチルジシクロヘキサン二無水物、ｐ−フェニレンビス（トリメリテート無水物）、エチレンテトラカルボン酸二無水物、１，２，３，４−ブタンテトラカルボン酸二無水物、デカヒドロナフタレン−１，４，５，８−テトラカルボン酸二無水物、４，８−ジメチル−１，２，３，５，６，７−ヘキサヒドロナフタレン−１，２，５，６−テトラカルボン酸二無水物、シクロペンタン−１，２，３，４−テトラカルボン酸二無水物、ピロリジン−２，３，４，５−テトラカルボン酸二無水物、１，２，３，４−シクロブタンテトラカルボン酸二無水物、ビス（エキソ−ビシクロ〔２，２，１〕ヘプタン−２，３−ジカルボン酸二無水物）スルホン、ビシクロ−（２，２，２）−オクト（７）−エン２，３，５，６−テトラカルボン酸二無水物、２，２−ビス（３，４−ジカルボキシフェニル）ヘキサフルオロプロパン二無水物、２，２−ビス〔４−（３，４−ジカルボキシフェノキシ）フェニル〕ヘキサフルオロプロパン二無水物、４，４′−ビス（３，４−ジカルボキシフェノキシ）ジフェニルスルフイド二無水物、１，４−ビス（２−ヒドロキシヘキサフルオロイソプロピル）ベンゼンビス（トリメリット酸二無水物）、１，３−ビス（２−ヒドロキシヘキサフルオロイソプロピル）ベンゼンビス（トリメリット酸二無水物）、５−（２，５−ジオキソテトラヒドロフリル）−３−メチル−３−シクロヘキセン−１，２−ジカルボン酸二無水物、テトラヒドロフラン−２，３，４，５−テトラカルボン酸二無水物等があり、２種類以上を混合して用いてもよい。
【００１５】
前記ポリイミド樹脂の製造に使用されるジアミンとしては、１，２−ジアミノエタン、１，３−ジアミノプロパン、１，４−ジアミノブタン、１，５−ジアミノペンタン、１，６−ジアミノヘキサン、１，７−ジアミノヘプタン、１，８−ジアミノオクタン、１，９−ジアミノノナン、１，１０−ジアミノデカン、１，１１−ジアミノウンデカン、１，１２−ジアミノドデカン等の脂肪族ジアミン、ｏ−フェニレンジアミン、ｍ−フェニレンジアミン、ｐ−フェニレンジアミン、３，３′−ジアミノジフェニルエーテル、３，４′−ジアミノジフェニルエーテル、４，４′−ジアミノジフェニルエーテル、３，３′−ジアミノジフェニルメタン、３，４′−ジアミノジフェニルメタン、４，４′−ジアミノジフェニルメタン、３，３′−ジアミノジフェニルジフルオロメタン、３，４′−ジアミノジフェニルジフルオロメタン、４，４′−ジアミノジフェニルジフルオロメタン、３，３′−ジ アミノジフェニルスルホン、３，４′−ジアミノジフェニルスルホン、４，４′−ジアミノジフェニルスルホン、３，３′−ジアミノジフェニルスルフイド、３，４′−ジアミノジフェニルスルフイド、４，４′−ジアミノジフェニルスルフイド、３，３′−ジアミノジフェニルケトン、３，４′−ジアミノジフェニルケトン、４，４′−ジアミノジフェニルケトン、２，２−ビス（３−アミノフェニル）プロパン、２，２′−（３，４′−ジアミノジフェニル）プロパン、２，２−ビス（４−アミノフェニル）プロパン、２，２−ビス（３−アミノフェニル）ヘキサフルオロプロパン、２，２−（３，４′−ジアミノジフェニル）ヘキサフルオロプロパン、２，２−ビス（４−アミノフェニル）ヘキサフルオロプロパン、１，３−ビス（３−アミノフェノキシ）ベンゼン、１，４−ビス（３−アミノフェノキシ）ベンゼン、１，４−ビス（４−アミノフェノキシ）ベンゼン、３，３′−（１，４−フェニレンビス（１−メチルエチリデン））ビスアニリン、３，４′−（１，４−フェニレンビス（１−メチルエチリデン））ビスアニリン、４，４′−（１，４−フェニレンビス（１−メチルエチリデン））ビスアニリン、２，２−ビス（４−（３−アミノフェノキシ）フェニル）プロパン、２，２−ビス（４−（４−アミノフェノキシ）フェニル）プロパン、２，２−ビス（４−（３−アミノフェノキシ）フェニル）ヘキサフルオロプロパン、２，２−ビス（４−（４−アミノフエノキシ）フエニル）ヘキサフルオロプロパン、ビス（４−（３−アミノフェノキシ）フェニル）スルフイド、ビス（４− （４−アミノフェノキシ）フェニル）スルフイド、ビス（４−（３−アミノフェノキシ）フェニル）スルホン、ビス（４−（４−アミノフェノキシ）フェニル）スルホン等の芳香族ジアミンを挙げることができる。
【００１６】
テトラカルボン酸二無水物とジアミンの縮合反応は、有機溶媒中で行う。この場合、テトラカルボン酸二無水物とジアミンは等モル又はほぼ等モルで用いるのが好ましく、各成分の添加順序は任意である。用いる有機溶媒としては、ジメチルアセトアミド、ジメチルホルムアミド、Ｎ−メチル−２−ピロリドン、ジメチルスルホキシド、ヘキサメチルホスホリルアミド、ｍ−クレゾール、ｏ−クロルフェノール等がある。
反応温度は８０℃以下、好ましくは０〜５０℃である。反応が進行するにつれ反応液の粘度が徐々に上昇する。この場合、ポリイミドの前駆体であるポリアミド酸が生成する。
【００１７】
ポリイミドは、上記反応物（ポリアミド酸）を脱水閉環させて得ることができる。脱水閉環は１２０℃〜２５０℃で熱処理する方法や化学的方法を用いて行うことができる。１２０℃〜２５０℃で熱処理する方法の場合、脱水反応で生じる水を系外に除去しながら行うことが好ましい。この際、ベンゼン、トルエン、キシレン等を用いて水を共沸除去してもよい。なお、本発明においてポリイミド樹脂とは、ポリイミド及びその前駆体を総称する。ポリイミドの前駆体には、ポリアミド酸のほか、ポリアミド酸が部分的にイミド化したものがある。
【００１８】
化学的方法で脱水閉環させる場合は、閉環剤として無水酢酸、無水プロピオン酸、無水安息香酸の酸無水物、ジシクロヘキシルカルボジイミド等のカルボジイミド化合物等を用いる。このとき必要に応じてピリジン、イソキノリン、トリメチルアミン、アミノピリジン、イミダゾール等の閉環触媒を用いてもよい。閉環剤又は閉環触媒は、テトラカルボン酸二無水物１モルに対し、それぞれ１〜８モルの範囲で使用するのが好ましい。
【００１９】
前記熱硬化性樹脂とは、加熱により３次元的網目構造を形成し、硬化する樹脂のことである。熱硬化性樹脂の配合量は、熱可塑性ポリイミド樹脂１００重量部に対し０．１〜２００重量部、好ましくは１〜１００重量部とする。２００重量部を越えるとフィルム形成性が悪くなる。
【００２０】
熱硬化性樹脂として、エポキシ樹脂、硬化剤及び硬化促進剤を含有する樹脂を選ぶ場合に、用いられるエポキシ樹脂は、分子内に少なくとも２個のエポキシ基を含むもので、硬化性や硬化物特性の点からフェノールのグリシジルエーテル型のエポキシ樹脂が好ましい。このような樹脂としては、ビスフェノールＡ、ビスフェノールＡＤ、ビスフェノールＳ、ビスフェノールＦもしくはハロゲン化ビスフェノールＡとエピクロルヒドリンの縮合物、フェノールノボラック樹脂のグリシジルエーテル、クレゾールノボラック樹脂のグリシジルエーテル、ビスフェノールＡノボラック樹脂のグリシジルエーテル等が挙げられる。エポキシ樹脂の量は、ポリイミド樹脂１００重量部に対し１〜２００重量部、好ましくは５〜１００重量部で、２００重量部を越えるとフィルム形成性が悪くなる。
【００２１】
前記エポキシ樹脂としては、例えばビスフェノールＡ型エポキシ樹脂〔ＡＥＲ−Ｘ８５０１（旭化成工業（株）商品名）、Ｒ−３０１（油化シェルエポキシ（株）商品名）、ＹＬ−９８０（油化シェルエポキシ（株）商品名）〕、ビスフェノールＦ型エポキシ樹脂〔〔ＹＤＦ−１７０（東都化成（株）商品名）〕、ビスフェノールＡＤ型エポキシ樹脂〔Ｒ−１７１０（三井化学（株）商品名）、ＥＸＡ−８３０ＣＲＰ（大日本インキ化学工業（株）商品名）〕、フェノールノボラック型エポキシ樹脂〔Ｎ−７３０Ｓ（大日本インキ化学工業（株）商品名）、Ｑｕａｔｒｅｘ−２０１０（ダウ・ケミカル社商品名）〕、クレゾールノボラック型エポキシ樹脂〔ＹＤＣＮ−７０２Ｓ（東都化成（株）商品名）、ＥＯＣＮ−１００（日本化薬（株）商品名）〕、多官能エポキシ樹脂〔ＥＰＰＮ−５０１（日本化薬（株）商品名）、ＴＡＣＴＩＸ−７４２（ダウ・ケミカル社商品名）、ＶＧ−３０１０（三井化学（株）商品名）、１０３２Ｓ（油化シェルエポキシ（株）商品名）〕、ナフタレン骨格を有するエポキシ樹脂〔ＨＰ−４０３２（大日本インキ化学工業（株）商品名）〕、脂環式エポキシ樹脂〔ＣＥＬ−３０００（ダイセル化学工業（株）商品名）〕、エポキシ化ポリブタジエン〔ＰＢ−４７００（ダイセル化学工業（株）商品名）〕、アミン型エポキシ樹脂〔ＥＬＭ−１００（住友化学工業（株）商品名）、ＹＨ−４３４Ｌ（東都化成（株）商品名）〕、レゾルシン型エポキシ樹脂〔デナコールＥＸ−２０１（ナガセ化成工業（株）商品名）〕、ネオペンチルグリコール型エポキシ樹脂〔デナコールＥＸ−２１１（ナガセ化成工業（株）商品名）〕、ヘキサンディネルグリコール型エポキシ樹脂〔デナコールＥＸ−２１２（ナガセ化成工業（株）商品名）〕、エチレン・プロピレングリコール型エポキシ樹脂〔デナコールＥＸ−８１０，８１１，８５０，８５１，８２１，８３０，８３２，８４１，８６１（ナガセ化成工業（株）商品名）〕、下記一般式（Ｉ）
【化１】

Figure 0003605651
〔式中ｓは０〜５の整数を表す〕
で表されるエポキシ樹脂〔Ｅ−ＸＬ−２４，Ｅ−ＸＬ−３Ｌ（三井化学（株）商品名）〕などが挙げられる。これらは単独で又は２種以上を組み合わせて使用することができる。
【００２２】
ＰＧＥ（日本化薬（株）商品名）、ＰＰ−１０１（東都化成（株）商品名）、ＥＤ−５０２，５０９（旭電化工業（株）商品名）、ＹＥＤ−１２２（油化シェルエポキシ（株）商品名）、ＫＢＭ−４０３（信越化学工業（株）商品名）、ＴＳＬ−８３５０，ＴＳＬ−８３５５，ＴＳＬ−９９０５（東芝シリコーン（株）商品名）等の１分子中に１個のエポキシ基を有する化合物（単官能エポキシ化合物）をエポキシ樹脂の一部として使用してもよい。単官能エポキシ化合物は、本発明の樹脂ペースト組成物の特性を阻害しない範囲で使用されるが、エポキシ樹脂の全量に対して１０重量％以下で使用されることが好ましい。
【００２３】
硬化剤としては、例えば、フェノール樹脂が用いられる。フェノール樹脂は、分子中に少なくとも２個のフェノール性水酸基を有するもので、このような樹脂としては、例えば、フェノールノボラック樹脂、クレゾールノボラック樹脂、ビスフェノールＡノボラック樹脂、ポリ−ｐ−ビニルフェノール、フェノールアラルキル樹脂等が挙げられる。フェノール樹脂の量は、エポキシ樹脂１００重量部に対して２〜１５０重量部、好ましくは５０〜１２０重量部で、２重量部未満もしくは１５０重量部を越えると硬化性が不充分となる。
【００２４】
硬化剤としては、また、ジシアンジアミド、下記一般式（ＩＩ）
【化２】
Figure 0003605651
〔式中、Ｒは、ｍ−フェニレン基、ｐ−フェニレン基等の２価の芳香族基、炭素数２〜１２の直鎖状又は分枝状のアルキレン基を表す〕
で示される二塩酸ジヒドラジド〔市販品としては、ＡＤＨ，ＰＤＨ，ＳＤＨ（いずれも日本ヒドラジンエ業（株）商品名）がある〕、エポキシ樹脂とアミン化合物の反応物〔市販品としてはノバキュア（マイクロカプセル型硬化剤、旭化成工業（株）商品名）がある〕等が挙げられる。このようなエポキシ樹脂硬化剤の配合量は、エポキシ樹脂に対して０．０１〜９０重量％が好ましく、０．１〜５０重量％がより好ましい。
【００２５】
硬化促進剤は、エポキシ樹脂を硬化させるために用いられるものであれば特に制限はない。このようなものとしては例えば、イミダゾール類、ジシアンジアミド誘導体、ジカルボン酸ジヒドラジド、トリフェニルホスフィン、テトラフェニルホスホニウムテトラフェニルボレート、２−エチル−４−メチルイミダゾール−テトラフェニルボレート、１，８−ジアザビシクロ（５，４，０）ウンデセン−７−テトラフェニルボレート等が用いられる。これらは、２種以上を併用してもよい。硬化促進剤の量はエポキシ樹脂１００重量部に対し、０．０１〜５０重量部、好ましくは０．１〜２０重量部で、０．０１重量部未満では、硬化性が不充分となり、５０重量部を越えると保存安定性が悪くなる。
【００２６】
接着力を向上させるため、接着剤にシランカップリング剤、チタン系カップリング剤、ノニオン系界面活性剤、フッ素系界面活性剤、シリコーン系添加剤等を適宜加えてもよい。
【００２７】
本発明でウエハに貼り付ける条件としては、接着フィルムのガラス転移温度Ｔｇ（動的粘弾性測定におけるぴ緩和ピーク温度）以上で熱分解温度（熱重量分析における重量減少開始温度）以下が好ましい。フィルム圧着温度がＴｇ未満では、貼り付け性が低下し、熱分解温度を超えるとフィルムが熱分解し接着性が低下するので好ましくない。１２０℃から２００℃が好ましい。ウェーハに貼り付ける圧力は、０．０３ＭＰａ〜２ＭＰａが好ましい。０．０３ＭＰａ未満では圧力が弱すぎてボイドが残留してしまい、２ＭＰａを超えると圧力が強すぎてウエハが割れる心配があるからである。本発明に用いるウエハとしては、シリコンウエハ、化合物ウエハなどがあり、特に限定されない。
【００２８】
接着剤付半導体素子をリードフレーム等の支持部材上に接着するときの温度はＴｇから７０℃以上高い温度で熱分解温度以下であることが好ましい。接着剤付半導体素子の接着温度がＴｇから７０℃高い温度より低い温度であると接着性が低下し、熱分解温度を超えるとフィルム状接着剤が熱分解し接着力が低下するので好ましくない。温度は１６０℃から２４０℃が好ましい。また、圧力は０．０３ＭＰａ〜２ＭＰａが好ましい。０．０３ＭＰａ未満では圧力が弱すぎてボイドが残留してしまい、２ＭＰａを超えると圧力が強すぎて半導体素子が割れる心配があるからである。
【００２９】
本発明で接着剤付半導体素子を圧着する支持部材としては、リードフレームのダイパット部、セラミック配線板、ガラスエポキシ配線板、ポリイミド配線板、半導体素子上部等の半導体素子搭載部が挙げられる。
【００３０】
【実施例】
以下、本発明を実施例により詳しく説明するが、本発明はこれにより限定されるものではない。以下、「部」は、「重量部」を意味する。
【００３１】
実施例１
熱可塑性ポリイミド〔ガラス転移温度７０℃、デカメチレンビストリメリテート二無水物１モルに対して４，９−ジオキサドデカン−１，１２−ジアミン０．５モル、２，２−ビス（４−（４−アミノフェノキシ）フェニルプロパン０．５モルを反応させて得られるもの〕１００部及びビスフェノールＡＤ型エポキシ樹脂（ＥＸＡ−８３０ＣＲＰ、大日本インキ化学工業株式会社商品名、エポキシ当量１７５）５部、硬化剤フェノールノボラック樹脂（Ｈ−１、昭和化成株式会社商品名）５部にシクロヘキサノンとジメチルアセトアミドの等重量混合溶剤２８０部を加えて溶解させる。ここに、銀粉を７０部加えて、よく撹拌し、均一に分散させ、塗工用ワニスとする。この塗エ用ワニスをキャリアフィルム（ポリプロピレン）上に塗工し、熱風循環式乾燥機の中で加熱して、溶媒を揮発乾燥させ、キャリアフィルムから剥離して、フィルム状単層接着剤を製造した。
【００３２】
フィルム状単層接着剤をウェーハのサイズよりも大きめに切り、ウエハ裏面を上にして、フィルム状接着剤を載せ０．１５ＭＰａで加圧、１８０℃で加熱することにより、フィルム状接着剤付きウエハを得た。フィルム状接着剤付きウエハは、約３０秒間１８０℃で加熱し、残存揮発分を除いた。その後、ウエハに接着後のウエハ（５インチ）の外観を観察し、また、反りを測定した。フィルム状接着剤付きウエハの接着剤面にダイシングテープを貼付し、ダイシング装置でフルカットすることにより接着剤付き半導体素子へ分割し、展張した。
【００３３】
ダイシングテープ上に分割された接着剤付き半導体素子はダイボンダーによりダイシングテープの下からピンで突き上げられ、吸引コレットにより引き剥がされた。リードフレームヘ、温度２２０℃、荷重５０ｇ、時間５秒で接着剤付きチップをマウントした。日立化成工業株式会社製封止材（商品名ＣＥＬ９２００）でモールドし半導体装置とした。封止後のサンプルを８５℃、８５％ＲＨの恒温恒湿器中で１６８時間処理した後、ＩＲリフロー炉で２４０℃、１０ｓｅｃ加熱する。その後、サンプルをポリエステル樹脂で注型し、ダイアモンドカッターで切断した断面を顕微鏡で観察して、リフロークラックの発生数を評価する事により耐リフロークラック性の評価を行った。評価結果を表１に示す。
【００３４】
実施例２
熱可塑性ポリイミドとして、熱可塑性ポリイミド〔ガラス転移温度５０℃、デカメチレンビストリメリテート二無水物１モルに対して４，９−ジオキサドデカン−１，１２−ジアミン１モルを反応させて得られるもの〕を使用したこと以外は実施例１に準じて行った。評価結果を表１に示す。
【００３５】
比較例１
熱可塑性ポリイミド〔ガラス転移温度１２０℃、デカメチレンビストリメリテート二無水物１モルに対して２，２−ビス（４−（４−アミノフェノキシ）フェニルプロパン１モルを反応させて得られるもの〕１００部、実施例１と同じビスフェノールＡＤ型エポキシ樹脂（エポキシ当量１７５）５部及び実施例１と同じ硬化剤フェノールノボラック樹脂５部に有機溶媒２８０部を加えて溶解させた。ここに、銀粉を７０部加えて、よく撹拌し、均一に分散させ、塗工用ワニスとした。この塗エ用ワニスをキャリアフィルム（ポリエチレンテレフタレート）上に塗工し、熱風循環式乾燥機の中で加熱して、溶媒を揮発乾燥させ、キャリアフィルム付きフィルム状接着剤を製造した。
【００３６】
キャリアフィルム付きフィルム状接着剤をウェーハのサイズよりも大きめに切り、ウエハ裏面を上にし、そこへ、キャリアフィルム付きフィルム状接着剤を載せ０．１５ＭＰａで加圧、１５０℃〜１８０℃で加熱することにより、キャリアフィルム付きフィルム状接着剤付きウエハを得た。キャリアフィルムを剥離した後、フィルム状接着剤付きウエハは、約３０秒間１５０℃〜１８０℃で加熱し、残存揮発分を除いた。その後、ウエハに接着後のウエハ（５インチ）の外観を観察し、また、反りを測定した。フィルム状接着剤付きウエハの接着剤面にダイシングテープを貼付、ダイシング装置でフルカットすることにより接着剤付き半導体素子へ分割し、展張した。
【００３７】
ダイシングテープ上に分割された接着剤付き半導体素子はダイボンダーによりダイシングテープの下からピンで突き上げられ、吸引コレットにより引き剥がされた。リードフレームヘ、温度２２０℃、荷重５０ｇ、時間５秒で接着剤付きチップをマウントする。日立化成工業株式会社製封止材（商品名ＣＥＬ９２００）でモールドし半導体装置とする。封止後のサンプルを８５℃、８５％ＲＨの恒温恒湿器中で１６８時間処理した後、１Ｒリフロー炉で２４０℃、１０ｓｅｃ加熱する。その後、サンプルをポリエステル樹脂で注型し、ダイアモンドカッターで切断した断面を顕微鏡で観察して、リフロークラックの発生数を評価することにより耐リフロークラック性の評価を行った。評価結果を表１に示す。
【００３８】
比較例２
比較例１と同じ熱可塑性ポリイミド１００部、実施例１と同じビスフェノールＡＤ型エポキシ樹脂（エポキシ当量１７５）５部及び実施例１と同じ硬化剤フェノールノボラック樹脂５部にシクロヘキサノンとジメチルアセトアミドの等重量混合溶剤２８０部を加えて溶解させた。ここに、銀粉を７０部加えて、よく撹拌し、均一に分散させ、塗工用ワニスとする。この塗エ用ワニスをキャリアフィルム（ポリプロピレン）上に塗工し、熱風循環式乾燥機の中で加熱して、溶媒を揮発乾燥させ、キャリアフィルムから剥離して、フィルム状単層接着剤を製造した。
【００３９】
フィルム状単層接着剤をウェーハのサイズよりも大きめに切り、ウエハ裏面を上にして、フィルム状接着剤を載せ０．１５ＭＰａで加圧、１８０℃で加熱することにより、フィルム状接着剤付きウエハを得た。フィルム状接着剤付きウエハは、約３０秒間１８０℃で加熱し、残存揮発分を除いた。その後、ウエハに接着後のウエハ（５インチ）の外観を観察し、また、反りを測定した。フィルム状接着剤付きウエハの接着剤面にダイシングテープを貼付、ダイシング装置でフルカットする事により接着剤付き半導体素子へ分割し、展張した。
【００４０】
ダイシングテープ上に分割された接着剤付き半導体素子はダイボンダーによりダイシングテープの下からピンで突き上げられ、吸引コレットにより引き剥がされる。リードフレームヘ、温度２２０℃、荷重５０ｇ、時間５秒で接着剤付きチップをマウントする。日立化成工業株式会社製封止材（商品名ＣＥＬ９２００）でモールドし半導体装置とした。封止後のサンプルを８５℃、８５％ＲＨの恒温恒湿器中で１６８時間処理した後、ｌＲリフロー炉で２４０℃、１０秒加熱した。その後、サンプルをポリエステル樹脂で注型し、ダイアモンドカッターで切断した断面を顕微鏡で観察して、リフロークラックの発生数を評価する事により耐リフロークラック性の評価を行った。結果を表１に示す。
【００４１】
【表１】
Figure 0003605651
【００４２】
【発明の効果】
請求項１の方法によれば、フィルム状ウエハ裏面に接着剤を熱圧着する際、３００μｍ以下のウェハでも反りは小さく、また、幅広い温度で接着剤をウェハに接着でき、また、接着層にボイドが無く耐リフロー性に優れた半導体装置を製造することができる。
【図面の簡単な説明】
【図１】フィルム状接着剤をウェーハ裏面に接着する工程からダイシングして接着剤付半導体素子とする工程説明図である。
【図２】ダイシングして接着剤付半導体素子をリードフレームに接着し、半導体装置を製造する工程説明図である。
【符号の説明】
１ 接着剤
２ キャリアフィルム
３ ベースフィルム付き接着剤
４ シリコンウエハ
５ ヒート付きロール
６ 熱板
７ ダイシングテープ
８ 接着剤付半導体素子
９ 吸引コレット
１０ 突き上げコレット
１１ リードフレーム
１２ ダイパット部
１３ ヒートブロック
１４ 封止樹脂[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a die bonding adhesive and a method for manufacturing a semiconductor device using the same.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, as a method of die bonding a semiconductor element (joining the semiconductor element to a lead frame), a method has been used in which a die bonding material is supplied to a tab portion on a lead frame, and the semiconductor element is mounted thereon and bonded. As these die bonding materials, for example, Au-Si eutectic, solder, resin paste and the like are known. Among these die bonding materials, a die bonding method using a resin paste is currently frequently used. As a method of supplying the resin paste to the lead frame, a stamping method, a dispensing method, and a screen printing method are adopted, and the dispensing method is most often used. The dispensing method is a method in which a syringe is filled with a resin paste, and the paste is discharged onto a tub at a pressure of a device called a dispenser.
However, this method has a disadvantage that it is difficult to apply a resin paste evenly over the entire surface of the tab as the semiconductor element becomes larger, and in the case of using a resin paste, there is also a problem that a void is generated in the adhesive layer upon curing. is there.
[0003]
On the other hand, as a method of avoiding the drawbacks of these pastes, a method using a film-like adhesive is disclosed in JP-A-63-289822 and JP-A-1-19735. In addition, there is a problem that the film must be cut by using a conventional method, and an expensive device dedicated to sticking the cut film so as not to shift the position is required.
[0004]
Further, as a method for solving this problem, Japanese Patent Application Laid-Open No. 6-302629 discloses the following method. First, apply the adhesive in a film on the carrier film, dry it, cover the release film to create a carrier sheet with adhesive, peel off the release film, and thermally transfer the adhesive on the carrier sheet to the back of the wafer. To form a wafer with an adhesive. After attaching the wafer with adhesive on the dicing tape, the wafer is diced and divided into semiconductor elements with adhesive. The semiconductor element with the adhesive is peeled off from the dicing tape and thermocompression-bonded to a lead frame, and the semiconductor element is bonded to the lead frame.
[0005]
However, according to this method, firstly, the temperature at which the thermal transfer is performed cannot be set higher than the heat-resistant temperature of the carrier film, so that there is a problem that the temperature at which the adhesive is thermally transferred to the wafer is limited. Second, when the adhesive is thermally transferred, there is a problem that the wafer is greatly warped because the carrier film laminated with the adhesive thermally shrinks. If the warpage is large, a portion having low adhesion to the dicing tape is likely to be generated, and the semiconductor element will peel off from the dicing tape during dicing. In particular, it has been difficult to obtain a wafer which can be applied to a wafer having a thickness of 300 μm or less which is likely to warp.
[0006]
[Problems to be solved by the invention]
The invention according to claim 1 provides a method of manufacturing a semiconductor device using an adhesive which does not crack even on a wafer of 300 μm or less, has a small warpage, and can bond the adhesive to the wafer at a wide range of temperatures. is there.
[0007]
[Means for Solving the Problems]
The present invention relates to a die bonding adhesive comprising a thermoplastic polyimide resin having a glass transition temperature of 90 ° C. or lower and a thermosetting resin.
The present invention also provides a film-like single-layer adhesive made of a thermoplastic polyimide resin having a glass transition temperature of 80 ° C. or lower and a thermosetting resin on the back surface of a wafer on which a large number of semiconductor elements are formed by thermocompression bonding. A wafer, and the resulting wafer with adhesive is adhered and fixed to a dicing tape, divided into individual semiconductor elements and cut, and then the semiconductor element with adhesive obtained by peeling off the dicing tape is die-bonded to a support member. The present invention relates to a method for manufacturing a semiconductor device.
[0008]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an embodiment of the present invention will be described with reference to FIGS.
FIG. 1 is an explanatory view of a process of dicing from a process of bonding a film-like single-layer adhesive to the back surface of a wafer to a semiconductor device with an adhesive. FIG. 2 is an explanatory diagram of a process of manufacturing a semiconductor device by dicing and bonding a semiconductor element with an adhesive to a lead frame tab portion.
[0009]
In FIG. 1, an adhesive 1 is laminated on a carrier film 2 such as a polyester film or a polypropylene film to form an adhesive film 3 with a base film (a). The single-layer adhesive is obtained by peeling the carrier film 2 from the adhesive film 3 with the base film at the time of use. The adhesive film 3 with a base film is produced, for example, as follows. First, a polyimide resin and a thermosetting resin are dissolved in an organic solvent. The organic solvent used here is not particularly limited as long as it can be uniformly dissolved or kneaded. Next, additives are added and mixed as needed. The varnish thus obtained is applied uniformly on, for example, a carrier film 2 such as a polyester sheet and the like, under conditions where the used solvent is sufficiently volatilized, that is, at a temperature of about 60 to 200 ° C. and 0.1 to 30. Heat for a minute.
[0010]
Then, the adhesive 1 is heated under pressure by sandwiching the adhesive 1 on the wafer 4 with the hot plate 6 using the roll 5 with heating, and is heated at a temperature of approximately 60 ° C. to 200 ° C. for 0.1 to 10 minutes (b). Then, a wafer with an adhesive is obtained (c). A dicing tape 7 is attached to the adhesive 1 side of the wafer with the adhesive (d), diced, and divided into semiconductor elements 8 with the adhesive (e). The division can be performed using a known wafer cutter.
[0011]
In FIG. 2, the semiconductor element 8 with adhesive is peeled off from the dicing tape 7 using a suction collet 9 and a push-up collet 10 (f), and the semiconductor element 8 with adhesive is transported while being suctioned by the suction collet 9 (g). ), Placed on a support member, for example, a die pad portion 12 on a lead frame 11, then press-bonded, post-cured and bonded on a heat block 13, further wire-bonded (h), and sealed with a resin 14. (I).
[0012]
As the adhesive used in the present invention, for example, an adhesive mainly composed of a mixture of a thermoplastic polyimide resin having a glass transition temperature (Tg) of 90 ° C. or less and a thermosetting resin such as an epoxy resin is used. Additives such as fillers are mixed.
[0013]
In the present invention, the Tg of the thermoplastic polyimide resin is 90 ° C. or less, but preferably 30 to 80 ° C. If the Tg of the thermoplastic polyimide resin is too high, the effect of the present invention will be reduced, and if it is too low, the surface of the adhesive will show tackiness. The thermoplastic polyimide resin of the present invention preferably has no tackiness at room temperature.
The thermoplastic polyimide resin can be obtained by reacting a tetracarboxylic dianhydride with a diamine, and one having thermoplasticity is selected and used.
[0014]
Examples of the tetracarboxylic dianhydride used for producing such a polyimide resin include 1,2- (ethylene) bis (trimellitate dianhydride), 1,3- (trimethylene) bis (trimellitate dianhydride), 1,4- (tetramethylene) bis (trimellitate dianhydride), 1,5- (pentamethylene) bis (trimellitate dianhydride), and when n is 6-20, 1,6- (hexamethylene) bis (trimellitate) Dianhydride), 1,7- (heptamethylene) bis (trimellitate dianhydride), 1,8- (octamethylene) bis (trimellitate dianhydride), 1,9- (nonamethylene) bis (trimellitate dianhydride) Product), 1,10- (decamethylene) bis (trimellitate dianhydride), 1,12- (dodecamethylene) bis (trimellitate dianhydride) 1,16- (hexadecamethylene) bistrimellitate dianhydride, 1,18- (octadecamethylene) bis (trimellitate dianhydride), pyromellitic dianhydride, 3,3 ', 4,4' -Diphenyltetracarboxylic dianhydride, 2,2 ', 3,3'-diphenyltetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2- Bis (2,3-dicarboxyphenyl) propane dianhydride, 1,1-bis (2,3-dicarboxyphenyl) ethane dianhydride, 1,1-bis (3,4-dicarboxyphenyl) ethane dianhydride Anhydride, bis (2,3-dicarboxyphenyl) methane dianhydride, bis (3,4-dicarboxyphenyl) methane dianhydride, bis (3,4-dicarboxyphenyl) sulfone dianhydride, , 4,9,10-Perylenetetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) ether dianhydride, benzene-1,2,3,4-tetracarboxylic dianhydride, 3,4 , 3 ', 4'-benzophenonetetracarboxylic dianhydride, 2,3,2', 3-benzophenonetetracarboxylic dianhydride, 2,3,3 ', 4'-benzophenonetetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 1,2,4,5-naphthalene-tetracarboxylic dianhydride, 1 , 4,5,8-Naphthalene-tetracarboxylic dianhydride, 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,7-dichloronaphthalene-1,4 , 5,8-tetra Rubonic dianhydride, 2,3,6,7-tetrachloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, phenanthrene-1,8,9,10-tetracarboxylic dianhydride, Pyrazine-2,3,5,6-tetracarboxylic dianhydride, thiophene-2,3,4,5-tetracarboxylic dianhydride, 2,3,3 ', 4'-biphenyltetracarboxylic dianhydride Product, 3,4,3 ', 4'-biphenyltetracarboxylic dianhydride, 2,3,2', 3'-biphenyltetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) dimethylsilane Dianhydride, bis (3,4-dicarboxyphenyl) methylphenylsilane dianhydride, bis (3,4-dicarboxyphenyl) diphenylsilane dianhydride, 1,4-bis (3,4-dicarboxyphenyl) Methylsilyl) benzene dianhydride, 1,3-bis (3,4-dicarboxyphenyl) -1,1,3,3-tetramethyldicyclohexane dianhydride, p-phenylenebis (trimellitate anhydride), ethylene tetra Carboxylic dianhydride, 1,2,3,4-butanetetracarboxylic dianhydride, decahydronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 4,8-dimethyl-1,2 , 3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrrolidine-2, 3,4,5-tetracarboxylic dianhydride, 1,2,3,4-cyclobutanetetracarboxylic dianhydride, bis (exo-bicyclo [2,2,1] heptane-2,3-dicarboxylic dianhydride Nothing Hydrate) sulfone, bicyclo- (2,2,2) -oct (7) -ene 2,3,5,6-tetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) Hexafluoropropane dianhydride, 2,2-bis [4- (3,4-dicarboxyphenoxy) phenyl] hexafluoropropane dianhydride, 4,4'-bis (3,4-dicarboxyphenoxy) diphenylsul Fluid dianhydride, 1,4-bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimellitic dianhydride), 1,3-bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimellitic dianhydride) Anhydride), 5- (2,5-dioxotetrahydrofuryl) -3-methyl-3-cyclohexene-1,2-dicarboxylic dianhydride, tetrahydrofuran 2,3,4,5 have tetracarboxylic dianhydride may be used as a mixture of two or more.
[0015]
Examples of the diamine used for the production of the polyimide resin include 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, Aliphatic diamines such as 7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminoundecane and 1,12-diaminododecane, o-phenylenediamine, m -Phenylenediamine, p-phenylenediamine, 3,3'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, , 4'-Diaminodiphenylmethane, 3,3'-dia Nodiphenyldifluoromethane, 3,4'-diaminodiphenyldifluoromethane, 4,4'-diaminodiphenyldifluoromethane, 3,3'-diaminodiphenylsulfone, 3,4'-diaminodiphenylsulfone, 4,4'-diamino Diphenylsulfone, 3,3'-diaminodiphenylsulfide, 3,4'-diaminodiphenylsulfide, 4,4'-diaminodiphenylsulfide, 3,3'-diaminodiphenylketone, 3,4'- Diaminodiphenyl ketone, 4,4'-diaminodiphenyl ketone, 2,2-bis (3-aminophenyl) propane, 2,2 '-(3,4'-diaminodiphenyl) propane, 2,2-bis (4- Aminophenyl) propane, 2,2-bis (3-aminophenyl) hexafluoropropane, 2 2- (3,4'-diaminodiphenyl) hexafluoropropane, 2,2-bis (4-aminophenyl) hexafluoropropane, 1,3-bis (3-aminophenoxy) benzene, 1,4-bis (3 -Aminophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, 3,3 '-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 3,4'-(1,4- Phenylenebis (1-methylethylidene)) bisaniline, 4,4 '-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 2,2-bis (4- (3-aminophenoxy) phenyl) propane, 2,2-bis (4- (4-aminophenoxy) phenyl) propane, 2,2-bis (4- (3-aminophenoxy) phenyl) hexaflu Lopropane, 2,2-bis (4- (4-aminophenoxy) phenyl) hexafluoropropane, bis (4- (3-aminophenoxy) phenyl) sulfide, bis (4- (4-aminophenoxy) phenyl) sulfide, bis Aromatic diamines such as (4- (3-aminophenoxy) phenyl) sulfone and bis (4- (4-aminophenoxy) phenyl) sulfone can be given.
[0016]
The condensation reaction between the tetracarboxylic dianhydride and the diamine is performed in an organic solvent. In this case, the tetracarboxylic dianhydride and the diamine are preferably used in an equimolar or almost equimolar manner, and the addition order of each component is arbitrary. Examples of the organic solvent used include dimethylacetamide, dimethylformamide, N-methyl-2-pyrrolidone, dimethylsulfoxide, hexamethylphosphorylamide, m-cresol, o-chlorophenol and the like.
The reaction temperature is 80 ° C or lower, preferably 0 to 50 ° C. As the reaction proceeds, the viscosity of the reaction solution gradually increases. In this case, polyamic acid, which is a precursor of polyimide, is generated.
[0017]
The polyimide can be obtained by subjecting the above reactant (polyamic acid) to dehydration and ring closure. The dehydration ring closure can be performed using a method of heat treatment at 120 ° C to 250 ° C or a chemical method. In the case of a method of performing heat treatment at 120 ° C. to 250 ° C., the heat treatment is preferably performed while removing water generated in the dehydration reaction outside the system. At this time, water may be azeotropically removed using benzene, toluene, xylene, or the like. In the present invention, the polyimide resin is a general term for polyimide and its precursor. Polyimide precursors include, in addition to polyamic acid, those in which polyamic acid is partially imidized.
[0018]
In the case of ring closure by dehydration by a chemical method, acetic anhydride, propionic anhydride, acid anhydride of benzoic anhydride, carbodiimide compound such as dicyclohexylcarbodiimide, etc. are used as a ring closing agent. At this time, a ring-closing catalyst such as pyridine, isoquinoline, trimethylamine, aminopyridine and imidazole may be used, if necessary. The ring-closing agent or the ring-closing catalyst is preferably used in an amount of 1 to 8 mol per 1 mol of tetracarboxylic dianhydride.
[0019]
The thermosetting resin is a resin that forms a three-dimensional network structure by heating and cures. The amount of the thermosetting resin is 0.1 to 200 parts by weight, preferably 1 to 100 parts by weight, based on 100 parts by weight of the thermoplastic polyimide resin. If the amount exceeds 200 parts by weight, the film-forming properties deteriorate.
[0020]
When selecting a resin containing an epoxy resin, a curing agent and a curing accelerator as the thermosetting resin, the epoxy resin used has at least two epoxy groups in the molecule, and has curability and properties of a cured product. In view of this, a glycidyl ether type epoxy resin of phenol is preferred. Examples of such resins include bisphenol A, bisphenol AD, bisphenol S, bisphenol F or condensates of halogenated bisphenol A and epichlorohydrin, glycidyl ether of phenol novolak resin, glycidyl ether of cresol novolak resin, and glycidyl ether of bisphenol A novolak resin. And the like. The amount of the epoxy resin is from 1 to 200 parts by weight, preferably from 5 to 100 parts by weight, based on 100 parts by weight of the polyimide resin.
[0021]
As the epoxy resin, for example, bisphenol A type epoxy resin [AER-X8501 (trade name of Asahi Kasei Kogyo Co., Ltd.), R-301 (trade name of Yuka Shell Epoxy Co., Ltd.), YL-980 (oiler shell epoxy ( Trade name)], bisphenol F type epoxy resin [[YDF-170 (Toto Kasei Co., Ltd. trade name)], bisphenol AD type epoxy resin [R-1710 (Mitsui Chemicals Co., Ltd. trade name), EXA-830CRP (Dai Nippon Ink and Chemicals Co., Ltd.)], phenol novolak type epoxy resin [N-730S (Dai Nippon Ink and Chemicals Co., Ltd.), Quatrex-2010 (Dow Chemical Co., Ltd.)], cresol Novolak type epoxy resin [YDCN-702S (trade name of Toto Kasei Co., Ltd.), EOCN-100 (Nippon Kayaku Co., Ltd.) Product name)], polyfunctional epoxy resin [EPPN-501 (trade name of Nippon Kayaku Co., Ltd.), TACTIX-742 (trade name of Dow Chemical Company), VG-3010 (trade name of Mitsui Chemicals, Inc.), 1032S (trade name) Yuka Shell Epoxy Co., Ltd.)], an epoxy resin having a naphthalene skeleton [HP-4032 (Dainippon Ink Chemical Industry Co., Ltd.)], an alicyclic epoxy resin [CEL-3000 (Daicel Chemical Industries, Ltd.) Epoxidized polybutadiene [PB-4700 (trade name of Daicel Chemical Industries, Ltd.)], amine type epoxy resin [ELM-100 (trade name of Sumitomo Chemical Co., Ltd.), YH-434L (Toto) Kasei Co., Ltd.), resorcinol type epoxy resin [Denacol EX-201 (Nagase Kasei Kogyo Co., Ltd.)], neopentyl glycol type epo Resin [Denacol EX-211 (Trade name of Nagase Kasei Kogyo Co., Ltd.)], Hexane dinel glycol type epoxy resin [Denacol EX-212 (Trade name of Nagase Kasei Kogyo Co., Ltd.)], Ethylene propylene glycol type epoxy resin [Denacol EX-810, 811, 850, 851, 821, 830, 832, 841, 861 (trade name of Nagase Kasei Kogyo Co., Ltd.)], the following general formula (I)
Embedded image
Figure 0003605651
[Where s represents an integer of 0 to 5]
[E-XL-24, E-XL-3L (trade name of Mitsui Chemicals, Inc.)] and the like. These can be used alone or in combination of two or more.
[0022]
PGE (trade name of Nippon Kayaku Co., Ltd.), PP-101 (trade name of Toto Kasei Co., Ltd.), ED-502, 509 (trade name of Asahi Denka Kogyo Co., Ltd.), YED-122 (Yuuka Shell Epoxy Co., Ltd.) One epoxy in one molecule such as brand name), KBM-403 (brand name of Shin-Etsu Chemical Co., Ltd.), TSL-8350, TSL-8355, TSL-9905 (brand name of Toshiba Silicone Co., Ltd.) A compound having a group (monofunctional epoxy compound) may be used as a part of the epoxy resin. The monofunctional epoxy compound is used within a range that does not impair the properties of the resin paste composition of the present invention, but is preferably used at 10% by weight or less based on the total amount of the epoxy resin.
[0023]
As the curing agent, for example, a phenol resin is used. A phenol resin has at least two phenolic hydroxyl groups in a molecule. Examples of such a resin include a phenol novolak resin, a cresol novolak resin, a bisphenol A novolak resin, poly-p-vinylphenol, and phenol aralkyl. Resins. The amount of the phenol resin is 2 to 150 parts by weight, preferably 50 to 120 parts by weight, based on 100 parts by weight of the epoxy resin. If the amount is less than 2 parts by weight or exceeds 150 parts by weight, the curability becomes insufficient.
[0024]
As the curing agent, dicyandiamide, the following general formula (II)
Embedded image
Figure 0003605651
[In the formula, R represents a divalent aromatic group such as an m-phenylene group or a p-phenylene group, or a linear or branched alkylene group having 2 to 12 carbon atoms.]
Dihydrazide dihydrochloride (ADH, PDH, SDH (all trade names are trade names of Nippon Hydrazine Co., Ltd.) as a commercial product), a reaction product of an epoxy resin and an amine compound [a commercial product is Novacure (Micro Capsule type curing agent, trade name of Asahi Kasei Kogyo Co., Ltd.) and the like. The compounding amount of such an epoxy resin curing agent is preferably from 0.01 to 90% by weight, more preferably from 0.1 to 50% by weight, based on the epoxy resin.
[0025]
The curing accelerator is not particularly limited as long as it is used for curing the epoxy resin. Examples of such a compound include imidazoles, dicyandiamide derivatives, dicarboxylic dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo (5, (4,0) Undecene-7-tetraphenyl borate and the like are used. These may be used in combination of two or more. The amount of the curing accelerator is 0.01 to 50 parts by weight, preferably 0.1 to 20 parts by weight, based on 100 parts by weight of the epoxy resin. If the amount exceeds the limit, the storage stability deteriorates.
[0026]
In order to improve the adhesive strength, a silane coupling agent, a titanium-based coupling agent, a nonionic surfactant, a fluorine-based surfactant, a silicone-based additive, or the like may be appropriately added to the adhesive.
[0027]
In the present invention, the condition for sticking to the wafer is preferably equal to or higher than the glass transition temperature Tg (ぴ relaxation peak temperature in dynamic viscoelasticity measurement) of the adhesive film and equal to or lower than the thermal decomposition temperature (weight reduction starting temperature in thermogravimetric analysis). If the film pressure-bonding temperature is lower than Tg, the sticking property is deteriorated, and if the temperature exceeds the thermal decomposition temperature, the film is thermally decomposed and the adhesive property is lowered, which is not preferable. 120 ° C to 200 ° C is preferred. The pressure applied to the wafer is preferably 0.03 MPa to 2 MPa. If the pressure is less than 0.03 MPa, the pressure is too weak to leave voids, and if the pressure is more than 2 MPa, the pressure is too strong and the wafer may be broken. Examples of the wafer used in the present invention include a silicon wafer and a compound wafer, and are not particularly limited.
[0028]
The temperature at which the semiconductor device with the adhesive is bonded to a support member such as a lead frame is preferably 70 ° C. or more higher than Tg and not higher than the thermal decomposition temperature. If the bonding temperature of the semiconductor element with an adhesive is lower than a temperature 70 ° C. higher than Tg, the adhesiveness is reduced, and if it exceeds the thermal decomposition temperature, the film adhesive is thermally decomposed and the adhesive strength is undesirably reduced. The temperature is preferably from 160 ° C to 240 ° C. Further, the pressure is preferably 0.03 MPa to 2 MPa. If the pressure is less than 0.03 MPa, the pressure is too weak, and voids remain. If the pressure is more than 2 MPa, the pressure is too strong, and the semiconductor element may be broken.
[0029]
Examples of the support member for pressing the semiconductor device with the adhesive in the present invention include a die pad portion of a lead frame, a ceramic wiring board, a glass epoxy wiring board, a polyimide wiring board, and a semiconductor element mounting portion such as a semiconductor element upper portion.
[0030]
【Example】
Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited thereto. Hereinafter, “parts” means “parts by weight”.
[0031]
Example 1
Thermoplastic polyimide [glass transition temperature 70 ° C., 0.5 mol of 4,9-dioxadodecane-1,12-diamine, 1 mol of decamethylenebistrimellitate dianhydride, 2,2-bis (4- ( Obtained by reacting 0.5 mol of 4-aminophenoxy) phenylpropane] 100 parts and bisphenol AD type epoxy resin (EXA-830CRP, trade name of Dainippon Ink and Chemicals, epoxy equivalent 175) 5 parts, cured To phenol novolak resin (H-1, trade name of Showa Kasei Co., Ltd.) was added 5 parts of 280 parts of a mixed solvent of an equal weight of cyclohexanone and dimethylacetamide, and 70 parts of silver powder was added thereto. The varnish for coating is dispersed uniformly to form a coating varnish, which is coated on a carrier film (polypropylene), By heating in the wind-circulating drying machine, the solvent is volatilized dried, peeled from the carrier film to produce a film-like single layer adhesive.
[0032]
Cut the film-like single-layer adhesive to a size larger than the size of the wafer, place the film-like adhesive on the back side of the wafer, pressurize it at 0.15 MPa, and heat it at 180 ° C. Got. The wafer with a film adhesive was heated at 180 ° C. for about 30 seconds to remove residual volatile components. Thereafter, the appearance of the wafer (5 inches) after bonding to the wafer was observed, and the warpage was measured. A dicing tape was stuck on the adhesive surface of the wafer with a film adhesive, and the wafer was divided into semiconductor elements with an adhesive by full-cutting with a dicing machine and spread.
[0033]
The semiconductor element with the adhesive divided on the dicing tape was pushed up by a pin from below the dicing tape by a die bonder, and peeled off by a suction collet. The chip with the adhesive was mounted on the lead frame at a temperature of 220 ° C., a load of 50 g and a time of 5 seconds. A semiconductor device was obtained by molding with a sealing material (trade name: CEL9200) manufactured by Hitachi Chemical Co., Ltd. After the sealed sample is treated in a thermo-hygrostat at 85 ° C. and 85% RH for 168 hours, it is heated at 240 ° C. for 10 seconds in an IR reflow furnace. Thereafter, the sample was cast with a polyester resin, and a cross section cut with a diamond cutter was observed with a microscope, and the number of occurrences of reflow cracks was evaluated to evaluate reflow crack resistance. Table 1 shows the evaluation results.
[0034]
Example 2
As a thermoplastic polyimide, a thermoplastic polyimide [a glass transition temperature of 50 ° C., which is obtained by reacting 1 mol of 4,9-dioxadodecane-1,12-diamine with 1 mol of decamethylene bistrimellitate dianhydride; ] Was used in the same manner as in Example 1. Table 1 shows the evaluation results.
[0035]
Comparative Example 1
Thermoplastic polyimide [glass transition temperature 120 ° C, obtained by reacting 1 mol of 2,2-bis (4- (4-aminophenoxy) phenylpropane] with 1 mol of decamethylenebistrimellitate dianhydride] 100 280 parts of an organic solvent were added and dissolved in 5 parts of the same bisphenol AD epoxy resin (epoxy equivalent: 175) as in Example 1 and 5 parts of the same curing agent phenol novolak resin as in Example 1. 70 silver powder was added. In addition, the mixture was thoroughly stirred and uniformly dispersed to obtain a coating varnish.The coating varnish was coated on a carrier film (polyethylene terephthalate) and heated in a hot air circulating dryer. The solvent was evaporated and dried to produce a film adhesive with a carrier film.
[0036]
Cut the film-like adhesive with a carrier film larger than the size of the wafer, place the backside of the wafer on top, place the film-like adhesive with a carrier film on it, pressurize it at 0.15 MPa, and heat it at 150 ° C to 180 ° C. Thereby, a wafer with a film adhesive with a carrier film was obtained. After peeling off the carrier film, the wafer with the film adhesive was heated at 150 ° C. to 180 ° C. for about 30 seconds to remove residual volatile components. Thereafter, the appearance of the wafer (5 inches) after bonding to the wafer was observed, and the warpage was measured. A dicing tape was attached to the adhesive surface of the wafer with a film adhesive, and the wafer was divided into semiconductor devices with an adhesive by full-cutting with a dicing machine and spread.
[0037]
The semiconductor element with the adhesive divided on the dicing tape was pushed up by a pin from below the dicing tape by a die bonder, and peeled off by a suction collet. The chip with the adhesive is mounted on the lead frame at a temperature of 220 ° C., a load of 50 g and a time of 5 seconds. A semiconductor device is formed by molding with a sealing material (CEL9200, manufactured by Hitachi Chemical Co., Ltd.). The sample after sealing is treated in a thermo-hygrostat at 85 ° C. and 85% RH for 168 hours, and then heated in a 1R reflow furnace at 240 ° C. for 10 seconds. Thereafter, the sample was cast with a polyester resin, and a cross section cut with a diamond cutter was observed with a microscope, and the number of occurrences of reflow cracks was evaluated to evaluate reflow crack resistance. Table 1 shows the evaluation results.
[0038]
Comparative Example 2
Equal weight mixing of cyclohexanone and dimethylacetamide in 100 parts of the same thermoplastic polyimide as in Comparative Example 1, 5 parts of the same bisphenol AD epoxy resin (epoxy equivalent: 175) as in Example 1, and 5 parts of the same curing agent phenol novolak resin as in Example 1. 280 parts of a solvent were added and dissolved. Here, 70 parts of silver powder is added, well stirred, and uniformly dispersed to obtain a coating varnish. This coating varnish is coated on a carrier film (polypropylene), heated in a hot air circulation dryer, the solvent is evaporated and dried, and the film is peeled off from the carrier film to produce a film-like single-layer adhesive. did.
[0039]
Cut the film-like single-layer adhesive to a size larger than the size of the wafer, place the film-like adhesive on the back side of the wafer, pressurize it at 0.15 MPa, and heat it at 180 ° C. Got. The wafer with a film adhesive was heated at 180 ° C. for about 30 seconds to remove residual volatile components. Thereafter, the appearance of the wafer (5 inches) after bonding to the wafer was observed, and the warpage was measured. A dicing tape was attached to the adhesive surface of the wafer with a film adhesive, and the wafer was divided into semiconductor elements with an adhesive by full-cutting with a dicing machine and spread.
[0040]
The semiconductor element with the adhesive divided on the dicing tape is pushed up by a pin from below the dicing tape by a die bonder and peeled off by a suction collet. The chip with the adhesive is mounted on the lead frame at a temperature of 220 ° C., a load of 50 g and a time of 5 seconds. A semiconductor device was obtained by molding with a sealing material (trade name: CEL9200) manufactured by Hitachi Chemical Co., Ltd. The sample after sealing was treated in a thermo-hygrostat at 85 ° C. and 85% RH for 168 hours and then heated in an IR reflow oven at 240 ° C. for 10 seconds. Thereafter, the sample was cast with a polyester resin, and a cross section cut with a diamond cutter was observed with a microscope, and the number of occurrences of reflow cracks was evaluated to evaluate reflow crack resistance. Table 1 shows the results.
[0041]
[Table 1]
Figure 0003605651
[0042]
【The invention's effect】
According to the method of claim 1, when the adhesive is thermocompression-bonded to the back surface of the film-like wafer, the warpage is small even for a wafer of 300 μm or less, and the adhesive can be adhered to the wafer at a wide range of temperatures. And a semiconductor device having excellent reflow resistance can be manufactured.
[Brief description of the drawings]
FIG. 1 is an explanatory view of a process of dicing from a process of bonding a film adhesive to the back surface of a wafer to obtain a semiconductor device with an adhesive.
FIG. 2 is a process explanatory view for manufacturing a semiconductor device by dicing and bonding a semiconductor element with an adhesive to a lead frame.
[Explanation of symbols]
1 adhesive
2 Carrier film
3 Adhesive with base film
4 Silicon wafer
5 Roll with heat
6 hot plate
7 dicing tape
8. Semiconductor device with adhesive
9 Suction collet
10 Thrust collet
11 Lead frame
12 Die pad part
13 Heat block
14 sealing resin

Claims (1)

多数の半導体素子が形成されたウェハ裏面に、ガラス転移温度３０〜８０℃の熱可塑性ポリイミド樹脂及び熱硬化性樹脂を含有してなるフィルム状ダイボンディング用接着剤を熱圧着して接着剤付ウエハとし、得られた接着剤付ウエハをダイシングテープに貼り付け固着して個別半導体素子に分割切断後、前記ダイシングテープを剥離して得られる接着剤付き半導体素子を支持部材にダイボンディングすることを特徴とする半導体装置の製造方法。On the back surface of the wafer on which a large number of semiconductor elements are formed, a film-like die bonding adhesive containing a thermoplastic polyimide resin having a glass transition temperature of 30 to 80 ° C. and a thermosetting resin is thermocompression-bonded to the wafer with the adhesive. The obtained wafer with adhesive is adhered and fixed to a dicing tape, divided into individual semiconductor elements and cut, and the semiconductor element with adhesive obtained by peeling off the dicing tape is die-bonded to a support member. Manufacturing method of a semiconductor device.
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