JP3579464B2 - Micro electron gun and manufacturing method thereof - Google Patents

Description

[0001]
[Industrial applications]
The present invention relates to a micro electron gun and a method of manufacturing the same, and more particularly to a micro electron gun (micro field emission electron gun) using a micro cold cathode as an emitter and a method of manufacturing the same.
[0002]
In recent years, in order to overcome the speed limit of solid-state devices, the attempt to apply microfabrication technology for semiconductors to make micro vacuum tubes has started, and flat displays and micro electron mirrors with many micro cold cathodes arranged and integrated Tube development is underway.
[0003]
On the other hand, when the micro cold cathode is used as a micro electron gun in an analyzer or an inspection device such as an SEM (Scanning Electron Microscope), it is desirable that electrons having an energy as high as several keV can be emitted.
[0004]
Therefore, there is a demand for the development of a micro electron gun capable of emitting such high-energy electrons and capable of manufacturing many at once, and a method of manufacturing the same.
[0005]
[Prior art]
When the micro cold cathode is applied to an analyzer or an inspection device such as a SEM as a micro electron gun, it is desired that electrons emitted from the micro electron gun have high energy such as several keV.
[0006]
By the way, conventionally, it has been difficult to configure a micro electron gun having an energy of several keV using only a semiconductor fine processing technique.
[0007]
[Problems to be solved by the invention]
Therefore, the microelectron gun is formed from the emitter to the gate electrode (the part that emits low-energy electrons) by applying semiconductor microfabrication technology, and as a separate component, an accelerating electrode for accelerating the emitted electrons. In addition, it is conceivable to manufacture a micro electron gun by preparing an insulator for insulating the acceleration electrode from the emitter to the gate electrode and joining them together.
[0008]
In such a case, it is desirable that a large number of micro electron guns can be manufactured at once from the viewpoint of productivity, cost, and the like.
However, at present, it is difficult to manufacture many micro electron guns at once.
[0009]
More specifically, when manufacturing a large number of micro-electron guns at the same time, it is necessary to bond the microfield emitter chip, insulator, and acceleration electrode in a wafer state, but when manufacturing one micro-electron gun, It is not possible to apply the same processing shape and joining method as described above.
[0010]
This is because it is necessary to prevent a displacement or the like from occurring in the joining of the microfield emitter chip, the insulator, and the accelerating electrode, and to make sure that all joining is performed.
[0011]
Further, a dicing method or the like for cutting out as a micro electron gun must be newly considered.
Accordingly, an object of the present invention is to provide a micro electron gun which can be manufactured in large numbers at one time, and a method for manufacturing the same.
[0012]
[Means for Solving the Problems]
In order to solve the above-mentioned problem, the invention according to claim 1 includes a substrate and a substrate formed on the substrate.pluralAn emitter, a first insulating layer formed on the substrate and having a first through hole for passing electrons from the emitter, and formed on the first insulating layer to pass the electrons And a first opening for receiving a gate voltage.ToA gate electrode layer for forming a gate electrode;NoteFormed on the gate electrodeTogether with, A second through hole for passing the electronsAnd a second through hole provided corresponding to the entire arrangement position of the plurality of emitters.WithAndA second insulating layer having a thickness greater than 10 μm, and a second opening formed on the second insulating layer for allowing the electrons to pass therethrough, for accelerating the electrons. An acceleration electrode layer to which a voltage is supplied, wherein the second insulating layer is a glass plate.And the second opening provided in the acceleration electrode layer is provided corresponding to each of the plurality of emitters, and each is formed at a position corresponding to the arrangement position of the emitter.It has a configuration.
[0013]
The invention according to claim 2 isA plurality of the gate electrodes are provided in association with each of the plurality of emitters.
[0014]
The invention according to claim 3 includes a substrate, a plurality of emitters formed on the substrate and emitting an electron beam,An insulator plate joined to the substrate on the first surface by an anodic bonding method and having a second through hole provided corresponding to the entire arrangement position of the plurality of emitters;The plurality of emitters are disposed on a substrate on which the plurality of emitters are formed.When joining the substrate and the insulator plate, a joining voltage is applied.A plurality of electrode pads,A plurality of openings are formed on a second surface of the insulator plate opposite to the first surface and provided at positions corresponding to respective arrangement positions of the plurality of emitters, An accelerating electrode layer for accelerating the electron beam;A micro electron gun comprising:Body plateAnd the acceleration electrode layer allow the electron beam to pass therethrough, and the electrode pad functions as a gate electrode.
[0015]
The invention described in claim 4 isA microfield emitter chip having a plurality of emitters, a gate electrode for supplying a gate voltage, and a bonding electrode, and an electrode pad for applying a bonding voltage to the bonding electrode are formed on a first wafer. An emitter tip forming step, and an accelerating electrode for accelerating electrons emitted from the emitter on the second wafer, wherein a plurality of openings are provided at positions corresponding to respective arrangement positions of the plurality of emitters. An accelerating electrode forming step of forming an accelerating electrode provided; and an opening or cutout for passing the electrons, wherein the opening or cutout is provided corresponding to the entire arrangement position of the plurality of emitters. An insulator forming step of forming an insulator having a notch, a first bonding step of bonding the first wafer and the insulator by an anodic bonding method, Includes a second bonding step of bonding the insulating member and the second wafer by law, a cutting step of separating into individual microelectronic gun module chip, theIt has a configuration.
[0016]
The invention according to claim 5 isAn emitter chip forming step of forming a microfield emitter chip having a plurality of emitters, a gate electrode to which a gate voltage is supplied, and a bonding electrode on a conductive wafer, and accelerating electrons emitted from the emitter on the wafer An accelerating electrode forming step of forming an accelerating electrode provided with a plurality of openings at positions corresponding to respective arrangement positions of the plurality of emitters, and an opening for passing the electrons or A notch, an insulator forming step of forming an insulator having an opening or a notch provided corresponding to the entire arrangement position of the plurality of emitters; A first joining step of joining the insulator, a second joining step of joining the wafer and the insulator by an anodic joining method, Comprising a cutting step of separating the black gun module chip, theIt has a configuration.
[0017]
The invention according to claim 6 isA microfield emitter chip having a plurality of emitters and a bonding electrode serving as a gate electrode for supplying a gate voltage, and an electrode pad for applying a bonding voltage to the bonding electrode on a first wafer. Forming an emitter tip on the second wafer, and accelerating electrodes for accelerating electrons emitted from the emitter on the second wafer, wherein a plurality of openings are provided at positions corresponding to respective arrangement positions of the plurality of emitters. An accelerating electrode forming step of forming an accelerating electrode provided with a portion, and an opening or notch for passing the electrons, the opening being provided corresponding to the entire arrangement position of the plurality of emitters. Alternatively, an insulator forming step of forming an insulator having a notch, and a first bonding step of bonding the first wafer and the insulator by an anodic bonding method If has a second bonding step of bonding the insulating member and the second wafer by anodic bonding method, a cutting step of separating into individual microelectronic gun module chip, a structure including the.
[0018]
The invention according to claim 7 isAn emitter tip forming step of forming a microfield emitter tip having a plurality of emitters and a joining electrode acting as a gate electrode to which a gate voltage is supplied on a conductive wafer, and accelerating electrons emitted from the emitter on the wafer An accelerating electrode for forming an accelerating electrode in which a plurality of openings are provided at positions corresponding to respective arrangement positions of the plurality of emitters; and an opening for passing the electrons. Forming an insulator having an opening or a cut-out portion corresponding to the entire arrangement position of the plurality of emitters. A first joining step of joining the wafer and the insulator, and a second joining step of joining the wafer and the insulator by an anodic bonding method Has a configuration comprising a cutting step of separating into individual microelectronic gun module chip, the.
[0022]
[Action]
According to the first aspect of the present invention,pluralIt has a structure in which an insulating layer and a gate voltage layer are provided on a substrate having an emitter, and further, an insulating layer and an accelerating electrode layer are provided on the gate voltage layer. This facilitates mass production and provides a sufficient acceleration voltage. Further, since the gate electrode is used as the electrode, the structure is simplified.Further, the second insulating layer bonded to the substrate is provided with a second through hole provided corresponding to the entire arrangement position of the plurality of emitters, and a second through hole provided in the acceleration electrode layer. The opening is provided corresponding to each of the plurality of emitters, and is formed at a position corresponding to the arrangement position of the emitter. For this reason, it becomes possible to narrow down the beam diameter of the beam emitted from each emitter, and it is possible to improve the exhaust conductance.
[0023]
According to the invention described in claim 2,Since a gate electrode is provided for each emitter, a gate voltage can be individually applied to each emitter, so that each emitter can be individually driven.
[0024]
According to the third aspect of the present invention, an electrode pad used as a gate electrode is provided on a substrate having an emitter, and an insulator plate is joined between the substrate and the acceleration electrode. This facilitates mass production and provides a sufficient acceleration voltage. Further, since the gate electrode is used for the electrode pad, the structure is simplified.Further, a second through hole is provided in the insulator plate bonded on the substrate so as to correspond to the entire arrangement position of the plurality of emitters. Openings are provided correspondingly, and each is formed at a position corresponding to the arrangement position of the emitter. For this reason, it becomes possible to narrow down the beam diameter of the beam emitted from each emitter, and it is possible to improve the exhaust conductance.
[0025]
According to the invention described in claim 4,A gate electrode for supplying a plurality of emitters and a gate voltage by an emitter tip forming step, a microfield emitter chip having a junction electrode, an electrode pad for applying a junction voltage to the junction electrode, Forming an accelerating electrode on the second wafer by an accelerating electrode forming step, forming an insulator having an opening or a notch by an insulator forming step, and forming the first electrode by a first bonding step. The second wafer and the insulator are bonded to each other in the second bonding step, and separated into individual micro electron gun module chips in the cutting step.
[0026]
As a result, a microelectron gun in which the microfield emitter chip and the insulator and the insulator and the accelerating electrode are joined can be manufactured, so that mass production is facilitated and a microelectron that can obtain a sufficient accelerating voltage can be obtained. An electron gun can be manufactured. In addition, the individual micro electron gun module chips are separated by a cutting process. Therefore, individual micro electron gun module chips can be manufactured, so that productivity can be improved. Further, in the micro electron gun, an opening or a notch is provided in the insulator bonded on the substrate so as to correspond to the entire arrangement position of the plurality of emitters, and the acceleration electrode is provided in each of the plurality of emitters. Openings are provided correspondingly and formed at positions corresponding to the arrangement positions of the emitters, so that the beam diameter of the beam emitted from each emitter can be narrowed and the exhaust conductance is improved. It becomes possible.
[0027]
According to the invention described in claim 5,A microfield emitter chip is formed on a conductive wafer by an emitter chip forming step, an accelerating electrode is formed on the wafer by an accelerating electrode forming step, and an insulator having an opening or a notch is formed by an insulator forming step. Then, the conductive wafer and the pre-insulator are joined by the first joining step, and the wafer and the insulator are joined by the second joining step, and are separated into individual micro electron gun module chips by the cutting step.
[0028]
As a result, a microelectron gun in which the microfield emitter chip and the insulator and the insulator and the accelerating electrode are joined can be manufactured, so that mass production is facilitated and a microelectron that can obtain a sufficient accelerating voltage can be obtained. An electron gun can be manufactured. In addition, the individual micro electron gun module chips are separated by a cutting process. Therefore, individual micro electron gun module chips can be manufactured, so that productivity can be improved. Further, in the micro electron gun, an opening or a notch is provided in the insulator bonded on the substrate so as to correspond to the entire arrangement position of the plurality of emitters, and the acceleration electrode is provided in each of the plurality of emitters. Openings are provided correspondingly and formed at positions corresponding to the arrangement positions of the emitters, so that the beam diameter of the beam emitted from each emitter can be narrowed and the exhaust conductance is improved. It becomes possible.
[0029]
According to the invention described in claim 6,A microfield emitter chip having a plurality of emitters and a bonding electrode acting as a gate electrode for supplying a gate voltage by an emitter chip forming step; an electrode pad for applying a bonding voltage to the bonding electrode; Forming an accelerating electrode on a second wafer by an accelerating electrode forming step, forming an insulator having an opening or a notch by an insulator forming step, The first wafer and the insulator are respectively joined to the second wafer and the insulator by a second joining step, and separated into individual micro electron gun module chips by a cutting step.
[0030]
According to the present invention, a microfield emitter chip is formed on a conductive wafer by an emitter chip forming step, an accelerating electrode is formed on the wafer by an accelerating electrode forming step, and an opening is formed by an insulator forming step. An insulator having a portion or a notch is formed, the conductive wafer and the front insulator are joined in the first joining step, the wafer and the insulator are joined in the second joining step, and the individual micro-holes are cut out in the cutting step. Separate into electron gun module chips.
[0040]
【Example】
Next, a preferred embodiment of the present invention will be described with reference to the drawings.
First embodiment
The first embodiment is an embodiment in which a gate electrode is used as a bonding electrode and power is supplied from two points (power supply pads) on the wafer during bonding.
[0041]
a) Production of microfield emitter chip (corresponding to step S1 in FIG. 40)
The microfield emitter chip is manufactured by using a semiconductor fine processing technique.
[0042]
FIG. 1 is an external perspective view of a silicon (Si) wafer on which a large number of microfield emitter chips having four emitters are formed.
On the silicon wafer 1, a number of microfield emitter chips 2, a first power supply pad 3 for flowing a current for bonding, a second power supply pad 4, and a first alignment mark 5 for performing alignment at the time of bonding. , A second alignment mark 6 is formed, and is connected to each microfield emitter chip 2 and one of the first power supply pad 3 and the second power supply pad 4 via a power supply pattern 7. In this case, the silicon wafer 1 has a diameter of, for example, 3 inches and a thickness of 500 μm.
[0043]
As shown in FIGS. 2 and 3, each microfield emitter chip 2 (about 3 × 3 mm square) has four emitters 10 formed on a silicon substrate at intervals of about 500 μm and an oxide as an insulator on the silicon substrate. The gate electrode 11 is provided via silicon (SiO) 12.
[0044]
The emitter 10 is not limited to silicon (Si), but may be a Spindt-type emitter made of tungsten (W), nickel (Ni), gold (Au), or the like.
[0045]
As shown in FIG. 1, the first alignment mark 5 is formed at a position 30 to 35 mm from the center of the silicon wafer 1, and the second alignment mark 6 is formed at a position 20 to 25 mm from the center of the silicon wafer 1. It is formed. The formation is performed by patterning simultaneously with the exposure of the emitter chip mask.
[0046]
An Al film is formed on the back surface of the silicon wafer 1.
Either the first power supply pad 3 or the second power supply pad 4 is connected to each gate electrode 11 of all the microfield emitter chips 2 via the power supply pattern 7, but in a final step, each chip unit is connected. At the time of cutting, each gate electrode 11 and one of the power supply pads connected to the gate electrode 11 are separated from each other.
[0047]
The emitter 10 is not limited to silicon (Si), but may be a Spindt-type emitter made of tungsten (W), nickel (Ni), gold (Au), or the like.
[0048]
b) Production of glass sheet with insulating layer (corresponding to step S2 in FIG. 40)
For the insulating layer glass plate, semiconductor fine processing technology is applied.
FIG. 4 shows an external perspective view of a glass plate on which a large number of insulating layer glass plates are formed as insulators.
[0049]
A large number of insulating layer glass plates 21 and third alignment marks 22 are formed on the glass plate 20. The third alignment mark 22 is formed at a position corresponding to the second alignment mark 6.
[0050]
Further, on the glass plate 20, as shown in FIG. 5, a first opening 23 for passing electrons emitted from the emitter when the micro electron gun is completed, and each microfield emitter chip when the micro electron gun is completed. And a second opening 24 serving as a notch so that the gate electrode 11 and the power supply wire can be connected to each other.
[0051]
The size of the glass plate 20 is such that the silicon wafer and the accelerating electrode described below are aligned without covering the power supply pad for supplying the gate electrode, which is the bonding surface of the silicon wafer on which the microfield emitter chip 2 is formed. The size is set so as not to cover the first alignment mark 5 for performing the adjustment. For example, one having a size of 50 mm × 50 mm and a thickness of 100 μm is used.
[0052]
The third alignment mark 22, the first opening 23, and the second opening 24 are formed by sandblasting.
FIG. 6 shows an external perspective view of the insulating layer glass plate 21.
[0053]
The insulating layer glass plate 21 has a rectangular first opening 23 and a notch 25 formed by a second opening 24 (see FIG. 5).
c) Preparation of accelerating electrode (corresponding to step S3 in FIG. 40)
The production of the accelerating electrode is performed by using a semiconductor fine processing technique as in the production of the microfield emitter chip.
[0054]
FIG. 7 shows an external perspective view of the non-bonding surface side of the silicon wafer for an acceleration electrode.
The accelerating electrode silicon wafer 30 has a number of accelerating electrodes 31, a scribe line 32 used for cutting and separating the accelerating electrodes 31, and a third electrode for inserting a joining electrode for supplying a joining current. The opening 33 is aligned with the fourth alignment mark 34 for performing alignment during bonding, and the fourth opening 35 for inserting a bonding electrode for supplying a bonding current is aligned with bonding. And a fifth alignment mark 36 for In this case, the silicon wafer 30 has a diameter of, for example, 3 inches and a thickness of 200 μm.
[0055]
Each accelerating electrode 31 (about 3 × 3 mm square) corresponds to each of the four emitters 10 (see FIGS. 2 and 3) provided on the microfield emitter chip 2 as shown in FIGS. Four sixth openings 38 provided to allow the accelerated electrons to pass therethrough, and second notches for enabling connection between the gate electrode 11 of each microfield emitter chip and the power supply wire when the micro electron gun is completed. And a fifth opening 37 serving as a portion 39 (see FIG. 9).
[0056]
FIG. 10 is an external perspective view of the bonding surface side of the silicon wafer for an acceleration electrode.
The accelerating electrode silicon wafer 30 has a third opening 33 for inserting a bonding electrode for supplying a bonding current, a sixth alignment mark 40 for performing alignment during bonding, and a bonding current. A fourth opening 35 for inserting the joining electrode to be supplied and a seventh alignment mark 41 for performing alignment at the time of joining are provided.
[0057]
Here, a method for forming the acceleration electrode on the silicon wafer will be described.
First, the fourth alignment mark 34, the fifth alignment mark 36, and the scribe line 32 are formed on one surface of the silicon wafer using a double-sided mask aligner, and the sixth alignment mark 40 and the seventh alignment mark 40 are formed on the other surface. An alignment mark 41 is formed (see FIG. 11A).
[0058]
In this case, the fourth alignment mark 34 and the seventh alignment mark 41 are formed at corresponding positions across the silicon wafer, and the fifth alignment mark 36 and the sixth alignment mark 40 are formed at corresponding positions across the silicon wafer. Formed at the position where
[0059]
Next, the fourth alignment mark 34 and the fifth alignment mark 36 are used to form SiO 2 on the surface on which the alignment marks 34 and 36 are provided.₂Is formed on the surface on which the alignment marks 40 and 41 are provided by using the sixth alignment mark 40 and the seventh alignment mark 41.₂Is formed (see FIG. 11B).
[0060]
Subsequently, the third opening 33, the fourth opening 35, the fifth opening 37, and the sixth opening 38 are formed by etching Si using an alkaline etching solution such as KOH (FIG. 11 ( c)).
[0061]
Then, using HF buffer, the SiO₂Is removed, and the formation of the acceleration electrode is completed (see FIG. 11D).
Incidentally, the material of the accelerating electrode is not limited to silicon, but may be a wafer or a plate material such as Mo, Cr, Ta, Ti, kovar, Ge, or GaAs.
[0062]
d) Bonding of microfield emitter chip (silicon wafer) and insulating layer glass plate (glass plate) (corresponding to step S4 in FIG. 40)
Next, the joining of the microfield emitter chip to the insulating layer glass plate will be described with reference to FIG.
[0063]
The bonding between the microfield emitter chip and the insulating layer glass plate is performed using an anodic bonding method.
First, alignment is performed using the second alignment mark 6 of the silicon wafer 1 and the third alignment mark 22 of the glass plate 20.
[0064]
Then, 1 × 10^-5The first power supply pad 3 and the second power supply pad 4 on the silicon wafer 1 are subjected to direct current while being evacuated to about Torr and heated by the heater 51 so that the bonding surface between the silicon wafer 1 and the glass plate 20 becomes about 300 ° C. The power supply 50 is connected to the anode, the glass plate is connected to the cathode, and a voltage of about 300 volts is applied for about 10 minutes.
[0065]
Thereby, the gate electrode 11 on the silicon wafer 1 and the insulating layer glass plate 21 are joined.
FIG. 13 shows an external perspective view of the microfield emitter chip / insulating layer glass plate after bonding.
[0066]
e) Bonding of microfield emitter chip / insulating layer glass plate and acceleration electrode (silicon wafer) (corresponding to step S5 in FIG. 40)
Next, the joining of the microfield emitter chip / insulating layer glass plate and the accelerating electrode will be described with reference to FIG.
[0067]
The bonding between the microfield emitter chip / insulating layer glass plate and the accelerating electrode is performed using an anodic bonding method.
First, alignment is performed using the first alignment mark 6 of the silicon wafer 1 and the fourth alignment mark 34 of the silicon wafer 30 for the acceleration electrode.
[0068]
Then, 1 × 10^-5Evacuation is performed to about Torr, and heating is performed so that the bonding surface between the silicon wafer 1 and the glass plate 20 is about 300 ° C. Then, it is connected to the anode of the DC power supply 50 through the fourth opening 35, the glass plate is connected to the cathode, and a voltage of about 300 volts is applied for about 10 minutes.
[0069]
Thereby, the joint between the acceleration electrode 31 and the insulating layer glass plate 21 is performed.
FIG. 15 is an external perspective view of the microfield emitter chip / insulating layer glass plate / acceleration electrode after bonding.
[0070]
f) Cutting out a micro electron gun module chip (corresponding to step S6 in FIG. 40)
When bonding of the microfield emitter chip / insulating layer glass plate / acceleration electrode is completed, cutting (scribing) is performed as a micro electron gun module chip 100 as shown in FIG. I do.
[0071]
g) Joining to micro electron gun package (equivalent to step S7 in FIG. 40)
Next, the assembly of the cut-out micro electron gun module chip 100 will be described with reference to FIG.
[0072]
As the package of the micro electron gun, for example, a “TO-5” type metal package is used.
First, gold (Au) is coated on the surface of a “TO-5” type metal package, and the cut-out micro electron gun module 100 is placed on the coating surface to form a micro field emitter chip on the back surface of the silicon substrate. Heating is performed so that the temperature of the bonding surface of the formed Al film becomes 600 ° C.
[0073]
As a result, a eutectic of Al and Au is formed and joined.
h) Connection of power supply wires (corresponding to step S8 in FIG. 40)
Next, each of the acceleration electrode 31 and the four gate electrodes 11 is connected to a terminal of a “TO-5” type metal package by a power supply wire 52.
[0074]
Through the above steps, a large number of micro electron guns can be manufactured at one time.
According to the micro electron gun of the first embodiment, it is possible to apply a sufficient acceleration voltage to the emitted electrons, and the handling becomes easy. Further, the productivity is high and the manufacturing cost can be reduced.
[0075]
In the first embodiment, the anode of the DC power supply 50 is connected through the third opening 33 and the fourth opening 35. Instead of these openings, notches are formed in the accelerating electrode silicon wafer. It is also possible to provide a unit and similarly connect the anode of the DC power supply 50.
Second embodiment
The second embodiment is an embodiment in which a bonding electrode is provided separately from the gate electrode and power is supplied from the back surface of the wafer during bonding.
[0076]
a) Production of microfield emitter chip (corresponding to step S1 in FIG. 40)
FIG. 18 shows an external perspective view of a silicon (Si) wafer on which a large number of microfield emitter chips having four emitters are formed.
[0077]
On the silicon wafer 60, a large number of microfield emitter chips 61, a first alignment mark 62, a second alignment mark 63 for performing alignment at the time of bonding, and a first silicon exposure for flowing a current for bonding. A surface 64 and a second silicon exposed surface 65 are formed, and are connected to each microfield emitter chip 2 and either the first silicon exposed surface 64 or the second silicon exposed surface 65 via a power supply pattern 66. . In this case, for example, a silicon wafer having a diameter of 3 inches and a thickness of 500 μm is used as the silicon wafer 60.
[0078]
As shown in FIGS. 19 and 20, each microfield emitter chip 61 (about 3 × 3 mm square) has four emitters 70 formed at intervals of about 500 μm on a silicon substrate and an oxide as an insulator on the silicon substrate. A gate electrode 71 and a bonding electrode 72 are provided via silicon (SiO) 73.
[0079]
The emitter 70 is not limited to silicon (Si), but may be a Spindt-type emitter made of tungsten (W), nickel (Ni), gold (Au), or the like.
[0080]
The first alignment mark 62 is formed at a position 30 to 35 mm from the center of the silicon wafer 60, and the second alignment mark 63 is formed at a position 20 to 25 mm from the center of the silicon wafer 60. The formation is performed by patterning simultaneously with the exposure of the emitter chip mask.
[0081]
An Al film is formed on the back surface of the silicon substrate.
Each of the gate electrodes 71 and the bonding electrodes 72 of all the microfield emitter chips 61 are connected to one of the first exposed silicon surface 64 and the second exposed silicon surface 65 via a power supply pattern 66. When cutting out each chip unit in the final step, each gate electrode 71 or each bonding electrode 72 is separated from one of the silicon exposed surfaces connected to the gate electrode 71 or the bonding electrode 72. The structure is as follows.
[0082]
The emitter 70 is not limited to silicon (Si), but may be a Spindt-type emitter made of tungsten (W), nickel (Ni), gold (Au), or the like.
[0083]
FIG. 21 is a sectional view of the vicinity of the first silicon exposed surface 64 of the microfield emitter chip 61.
As shown in FIG. 21, a power supply pattern 66 is connected to a first silicon exposed surface 64 of a silicon substrate 60A via a contact 66A, and a bonding electrode 72 is connected to the other end of the power supply pattern.
[0084]
b) Production of glass sheet with insulating layer (corresponding to step S2 in FIG. 40)
FIG. 22 shows an external perspective view of a glass plate on which a large number of insulating layer glass plates are formed as insulators.
[0085]
On the glass plate 80, a large number of insulating layer glass plates 81 and third alignment marks 82 are formed. The third alignment mark 82 is formed at a position corresponding to the second alignment mark 63.
[0086]
Further, as shown in FIG. 23, a first cutout 85 (see FIG. 24) for passing electrons emitted from the emitter when the micro electron gun is completed is formed on the glass plate 80. An opening 83 and a second opening 84 serving as a second cutout 86 (see FIG. 24) so that the gate electrode 71 of each microfield emitter chip can be connected to the power supply wire when the micro electron gun is completed. And are formed.
[0087]
In this case, the first cutout 85 is provided in place of the first opening 23 (FIG. 6) of the first embodiment, that is, the insulating layer glass plate 81 as an insulating layer completely surrounds the emitter 70. Since the insulating layer glass plate 81 is formed so as not to be surrounded, the exhaust conductance of the emitter 70 can be improved.
[0088]
The third alignment mark 82, the first opening 83, and the second opening 84 are formed by sandblasting.
The size of the glass plate 80 is such that the silicon wafer and the accelerating electrode described later are aligned without covering the power supply pad for power supply of the gate electrode, which is the bonding surface of the silicon wafer on which the microfield emitter chip 61 is formed. The size is set so as not to cover the first alignment mark 62 for performing the adjustment. For example, one having a size of 50 mm × 50 mm and a thickness of 100 μm is used.
[0089]
As shown in FIG. 24, the insulating layer glass plate 81 includes a first cutout 85 and a second cutout 86.
c) Preparation of accelerating electrode (corresponding to step S3 in FIG. 40)
FIG. 25 shows an external perspective view of the non-bonding surface side of the silicon wafer for an acceleration electrode.
[0090]
The accelerating electrode silicon wafer 90 includes a number of accelerating electrodes 91, a scribe line 92 used for cutting and separating into individual accelerating electrodes 91, and a fourth alignment mark 93 for performing alignment at the time of bonding. And a fifth alignment mark 94 for performing alignment at the time of joining. In this case, as the silicon wafer 90 for an acceleration electrode, for example, a silicon wafer having a diameter of 3 inches and a thickness of 200 μm is used.
[0091]
Each of the accelerating electrodes 31 (about 3 × 3 mm square) corresponds to each of the four emitters 70 (see FIGS. 19 and 20) provided on the microfield emitter chip 61 as shown in FIGS. Four third openings 95 are provided to allow the accelerated electrons to pass therethrough, and a third cut is made so that the gate electrode 71 of each microfield emitter chip 61 and the power supply wire can be connected when the micro electron gun is completed. A fourth opening 96 serving as a cutout 98 (see FIG. 27) and a fifth opening 97 serving as a fourth cutout 99 (see FIG. 27) when the micro electron gun is completed are provided.
[0092]
FIG. 28 shows an external perspective view of the bonding surface side of the silicon wafer for an acceleration electrode.
The accelerating electrode silicon wafer 90 includes a sixth alignment mark 110 for performing alignment at the time of bonding and a seventh alignment mark 111 for performing alignment at the time of bonding.
[0093]
Here, a method for forming the acceleration electrode on the silicon wafer will be described.
First, a fourth alignment mark 93, a fifth alignment mark 94, and a scribe line 92 (not shown in FIG. 29) are formed on one surface of a silicon wafer using a double-sided mask aligner, and are formed on the other surface. A sixth alignment mark 110 and a seventh alignment mark 111 are formed (see FIG. 29A).
[0094]
In this case, the fourth alignment mark 93 and the seventh alignment mark 111 are formed at corresponding positions with the silicon wafer therebetween, and the fifth alignment mark 94 and the sixth alignment mark 110 are formed with the silicon wafer sandwiched therebetween. Formed at the position where
[0095]
Next, the fourth alignment mark 93 and the fifth alignment mark 94 are used to form SiO 2 on the surface on which the alignment marks 93 and 94 are provided.₂Is formed on the surface on which the alignment marks 110 and 111 are provided by using the sixth alignment mark 110 and the seventh alignment mark 111.₂Is formed (see FIG. 29B).
[0096]
Subsequently, the third opening 95, the fourth opening 96, and the fifth opening 97 are formed by etching Si using an alkaline etching solution such as KOH (see FIG. 29C).
[0097]
Then, using HF buffer, the SiO₂Then, the formation of the accelerating electrode is completed (see FIG. 29D).
Incidentally, the material of the accelerating electrode is not limited to silicon, but may be a wafer or a plate material such as Mo, Cr, Ta, Ti, kovar, Ge, or GaAs.
[0098]
d) Bonding of microfield emitter chip (silicon wafer) and insulating layer glass plate (glass plate) (corresponding to step S4 in FIG. 40)
Next, the joining of the microfield emitter chip to the insulating layer glass plate will be described with reference to FIG.
[0099]
The bonding between the microfield emitter chip and the insulating layer glass plate is performed using an anodic bonding method.
First, alignment is performed using the second alignment mark 63 of the silicon wafer 60 and the third alignment mark 82 of the glass plate 80.
Then, 1 × 10^-5The inside of the silicon wafer 60 is heated to about 300 ° C. by the heater 121 so that the bonding surface between the silicon wafer 60 and the glass plate 80 is heated to about 300 ° C. The glass plate is connected to the cathode, and a voltage of about 300 volts is applied for about 10 minutes.
[0100]
Thereby, the gate electrode 71 on the silicon wafer 60 and the insulating layer glass plate 80 are joined.
FIG. 31 shows an external perspective view of the microfield emitter chip / insulating layer glass plate after bonding.
e) Bonding of microfield emitter chip / insulating layer glass plate and acceleration electrode (silicon wafer) (corresponding to step S5 in FIG. 40)
Next, the joining of the microfield emitter chip / insulating layer glass plate and the accelerating electrode will be described with reference to FIG.
[0101]
The bonding between the microfield emitter chip / insulating layer glass plate and the accelerating electrode is performed using an anodic bonding method.
First, alignment is performed using the first alignment mark 93 of the silicon wafer 60 and the fourth alignment mark 93 and the fifth alignment mark 94 of the silicon wafer 90 for an acceleration electrode.
[0102]
Then, 1 × 10^-5The chamber is evacuated to about Torr, heated so that the bonding surface between the silicon wafer 60 and the glass plate 80 is about 300 ° C., the back surface of the silicon wafer 60 (the surface on which the Al film is formed) is connected to the anode of the DC power supply 50, and acceleration is performed. The electrode silicon wafer 90 is connected to the cathode, and a voltage of about 300 volts is applied for about 10 minutes.
[0103]
Thereby, the acceleration electrode 91 and the insulating layer glass plate 81 are joined.
FIG. 33 is an external perspective view of the bonded silicon wafer 60 / glass plate 80 / acceleration electrode silicon wafer 90 (microfield emitter chip / insulating layer glass plate / acceleration electrode).
[0104]
f) Cutting out a micro electron gun module chip (corresponding to step S6 in FIG. 40)
When bonding of the silicon wafer 60 / glass plate 80 / acceleration electrode silicon wafer 90 (bonding of the microfield emitter chip / insulating layer glass plate / acceleration electrode) is completed, a scribe line 92 on the acceleration electrode silicon wafer 90 is used. Then, cutting (scribing) is performed as a micro electron gun module chip 200 as shown in FIG.
[0105]
g) Joining the micro electron gun to the package (equivalent to step S7 in FIG. 40)
Next, the assembly of the cut-out micro electron gun module chip 200 will be described with reference to FIG.
[0106]
As the package of the micro electron gun, for example, a “TO-5” type metal package is used.
First, the surface of a “TO-5” type metal package is coated with gold (Au), and the cut-out micro electron gun module 200 is placed on the coating surface to form a micro field emitter chip on the back surface of the silicon substrate. Heating is performed so that the temperature of the bonding surface of the formed Al film becomes 600 ° C.
[0107]
As a result, a eutectic of Al and Au is formed and joined.
h) Connection of power supply wires (corresponding to step S8 in FIG. 40)
Next, each of the acceleration electrode 31 and the four gate electrodes 71 is connected to a terminal of a “TO-5” type metal package by a power supply wire 112.
[0108]
Through the above steps, a large number of micro electron guns can be manufactured at one time.
According to the micro electron gun of the second embodiment, it is possible to apply a sufficient acceleration voltage to the emitted electrons, and the handling becomes easy. Further, the productivity is high and the manufacturing cost can be reduced. Further, since the periphery of the emitter is not completely surrounded by the insulating layer glass plate 81, the exhaust conductance can be improved.
Third embodiment
The third embodiment is an embodiment in which an exposed surface of a substrate is used as a bonding electrode and power is supplied from the back surface of the wafer during bonding.
[0109]
a) Production of microfield emitter chip (corresponding to step S1 in FIG. 40)
FIG. 36 is an external perspective view of a silicon (Si) wafer on which a large number of microfield emitter chips having four emitters are formed.
[0110]
On the silicon wafer 130, a large number of microfield emitter chips 131, a first alignment mark 132 and a second alignment mark 133 for alignment at the time of bonding are formed. In this case, for example, a silicon wafer having a diameter of 3 inches and a thickness of 500 μm is used.
[0111]
As shown in FIGS. 37 and 38, each microfield emitter chip 131 (approximately 3 × 3 mm square) has four emitters 134 formed at intervals of about 500 μm on a silicon substrate and an oxide as an insulator on the silicon substrate. A gate electrode 136 and a silicon exposed surface 137 as a bonding surface are provided via silicon (SiO) 135.
[0112]
The first alignment mark 132 is formed at a position 30 to 35 mm from the center of the silicon wafer 130, and the second alignment mark 133 is formed at a position 20 to 25 mm from the center of the silicon wafer 130. The formation is performed by patterning simultaneously with the exposure of the emitter chip mask.
[0113]
Also, as shown in FIG. 39 to be described later, the silicon exposed surface 137 is formed so as to have a step of about 1.5 μm in advance, and a SiO₂The structure is such that processing is performed so that the film, the SiO film as an insulating layer, the gate electrode, and the like are removed, and the silicon substrate 130A is exposed as it is. Therefore, by supplying power to the back surface of the silicon wafer 130, it functions as a bonding electrode.
[0114]
An Al film is formed on the back surface of the silicon substrate.
As shown in FIG. 37, two adjacent microfield emitter chips, for example, microfield emitter chips 131_-1And 131_-2Are connected to each other, but when cutting out each chip unit in the final step, each microfield emitter chip 131_-1, 131_-2Are configured to be separated from each other.
[0115]
The emitter 134 is not limited to silicon (Si), but may be a Spindt-type emitter made of tungsten (W), nickel (Ni), gold (Au), or the like.
[0116]
FIG. 39 is a sectional view showing the vicinity of the silicon exposed surface 137 of the microfield emitter chip 131.
The microfield emitter chip 131 of the third embodiment has a simple structure and can further improve productivity.
[0117]
Since the method of the first embodiment or the second embodiment can be applied to the method of manufacturing the insulating layer glass plate and the accelerating electrode, and the method of joining and assembling them, the description is omitted in the third embodiment.
[0118]
According to the micro electron gun of the third embodiment, in addition to the effects of the micro electron gun of the first embodiment or the micro electron gun of the second embodiment, the structure of the micro field emitter chip can be simplified, Productivity can be further improved.
[0119]
【The invention's effect】
According to the first aspect of the present invention, the mass production of the micro electron gun is facilitated, and the micro electron gun capable of obtaining a sufficient acceleration voltage can be manufactured. Further, since the gate electrode is used as the electrode, the structure is simplified.Further, the beam diameter of the beam emitted from each emitter can be narrowed, and the exhaust conductance can be improved.
[0120]
According to the invention described in claim 2,A gate voltage can be individually applied to each emitter, so that each emitter can be individually driven.
[0121]
According to the third aspect of the present invention, the mass production of the micro electron gun becomes easy and the micro electron gun capable of obtaining a sufficient acceleration voltage can be manufactured. Further, since the gate electrode is used for the electrode pad, the structure is simplified.Further, the beam diameter of the beam emitted from each emitter can be narrowed, and the exhaust conductance can be improved.
[0122]
According to the invention described in claim 4,This makes it easy to mass-produce the micro electron gun and can manufacture a micro electron gun capable of obtaining a sufficient acceleration voltage. Also, individual micro electron gun module chips can be manufactured, and productivity can be improved. Further, the beam diameter of the beam emitted from each emitter can be narrowed, and the exhaust conductance can be improved.
[0123]
According to the invention described in claim 5,This makes it easy to mass-produce the micro electron gun and can manufacture a micro electron gun capable of obtaining a sufficient acceleration voltage. Also, individual micro electron gun module chips can be manufactured, and productivity can be improved. Further, the beam diameter of the beam emitted from each emitter can be narrowed, and the exhaust conductance can be improved.
[0124]
According to the invention described in claim 6,This makes it easy to mass-produce the micro electron gun and can manufacture a micro electron gun capable of obtaining a sufficient acceleration voltage. Also, individual micro electron gun module chips can be manufactured, and productivity can be improved. Further, the beam diameter of the beam emitted from each emitter can be narrowed, and the exhaust conductance can be improved.
[0125]
According to the invention described in claim 7,This makes it easy to mass-produce the micro electron gun and can manufacture a micro electron gun capable of obtaining a sufficient acceleration voltage. Also, individual micro electron gun module chips can be manufactured, and productivity can be improved. Further, the beam diameter of the beam emitted from each emitter can be narrowed, and the exhaust conductance can be improved.
[Brief description of the drawings]
FIG. 1 is an external perspective view of a silicon wafer for microfield emitter chips according to a first embodiment.
FIG. 2 is a partially enlarged perspective view of the silicon wafer of FIG. 1;
FIG. 3 is an external perspective view of the microfield emitter chip of the first embodiment.
FIG. 4 is an external perspective view of the glass sheet for an insulating layer glass sheet of the first embodiment.
FIG. 5 is a partially enlarged perspective view of the glass plate of FIG. 4;
FIG. 6 is an external perspective view of the insulating layer glass plate of the first embodiment.
FIG. 7 is an external perspective view of the acceleration electrode silicon wafer of the first embodiment.
FIG. 8 is a partially enlarged perspective view of the acceleration electrode silicon wafer of FIG. 7;
FIG. 9 is an external perspective view of the acceleration electrode of the first embodiment.
FIG. 10 is an external perspective view of the back surface of the acceleration electrode silicon wafer of FIG. 7;
FIG. 11 is an explanatory diagram of a manufacturing process of the acceleration electrode of the first embodiment.
FIG. 12 is an explanatory view for bonding a silicon wafer for a microfield emitter chip and a glass plate for an insulating layer glass plate of the first embodiment.
FIG. 13 is an explanatory view of a bonding state of the silicon wafer for microfield emitter chips and the glass plate for the insulating layer glass plate of the first embodiment.
FIG. 14 is an explanatory view for bonding a glass plate for an insulating layer glass plate and a silicon wafer for an acceleration electrode according to the first embodiment.
FIG. 15 is an explanatory view of a bonding state between a wafer and a glass plate according to the first embodiment.
FIG. 16 is an external perspective view of the micro electron gun module chip of the first embodiment.
FIG. 17 is an explanatory view of assembling the micro electron gun according to the first embodiment.
FIG. 18 is an external perspective view of a silicon wafer for microfield emitter chips according to a second embodiment.
FIG. 19 is a partially enlarged perspective view of the silicon wafer of FIG. 18;
FIG. 20 is an external perspective view of a microfield emitter chip according to a second embodiment.
FIG. 21 is a sectional view of a microfield emitter chip according to a second embodiment.
FIG. 22 is an external perspective view of a glass sheet for an insulating glass sheet according to a second embodiment.
FIG. 23 is a partially enlarged perspective view of the glass plate of FIG. 22.
FIG. 24 is an external perspective view of the insulating layer glass plate of the second embodiment.
FIG. 25 is an external perspective view of a silicon wafer for an acceleration electrode according to a second embodiment.
26 is a partially enlarged perspective view of the acceleration electrode silicon wafer of FIG. 25.
FIG. 27 is an external perspective view of an acceleration electrode according to a second embodiment.
28 is an external perspective view of the back surface of the accelerating electrode silicon wafer of FIG. 25. FIG.
FIG. 29 is an explanatory diagram of the manufacturing process of the acceleration electrode of the second embodiment.
FIG. 30 is an explanatory view for bonding a silicon wafer for a microfield emitter chip and a glass plate for an insulating layer glass plate according to the second embodiment.
FIG. 31 is an explanatory view showing a bonding state between a silicon wafer for microfield emitter chips and a glass plate for an insulating layer glass plate according to the second embodiment.
FIG. 32 is an explanatory view for bonding a glass plate for an insulating layer glass plate and a silicon wafer for an acceleration electrode according to the second embodiment.
FIG. 33 is an explanatory diagram of a bonding state between a wafer and a glass plate according to the second embodiment.
FIG. 34 is an external perspective view of the micro electron gun module chip of the second embodiment.
FIG. 35 is an explanatory view for assembling the micro electron gun according to the second embodiment.
FIG. 36 is an external perspective view of a silicon wafer for microfield emitter chips according to a third embodiment.
FIG. 37 is a partially enlarged perspective view of the silicon wafer of FIG. 36.
FIG. 38 is an external perspective view of a microfield emitter chip according to a third embodiment.
FIG. 39 is a sectional view of a microfield emitter chip according to a third embodiment.
FIG. 40 is a manufacturing flowchart of the micro electron gun.
[Explanation of symbols]
1: Silicon wafer
2. Microfield emitter chip
3. First power supply pad
4: Second power supply pad
5 First alignment mark
6: Second alignment mark
7 ... Power supply pattern
10 Emitter
11 gate electrode
12 ... Silicon oxide (SiO)
20 ... Glass plate
21 ... Insulating layer glass plate
22: Third alignment mark
23 ... first opening
24 ... second opening
25 ... Notch
30 ... Silicon wafer for accelerating electrode
31 ... Acceleration electrode
32 ... Scribe line
33: Third opening
34: Fourth alignment mark
35 ... fourth opening
36 ... Fifth alignment mark
37 ... Fifth opening
38: Sixth opening
39: second notch
40: 6th alignment mark
41 ... 7th alignment mark
50 DC power supply
51 ... heater
52 ... Power supply wire
60 ... Silicon wafer
61 ... Microfield emitter chip
62: First alignment mark
63: Second alignment mark
64: First silicon exposed surface
65: Second silicon exposed surface
66 ... Power supply pattern
66A ... Contact
70 ... emitter
71 ... Gate electrode
72 ... joining electrode
73 ... Silicon oxide (SiO)
80 ... Glass plate
81… Insulating layer glass plate
82: Third alignment mark
83: First opening
84 second opening
85 ... first cutout
86: second notch
90 ... Silicon wafer for accelerating electrode
91 ... Acceleration electrode
92… Scribe line
93 ... fourth alignment mark
94 ... Fifth alignment mark
95: Third opening
96: fourth opening
97: Fifth opening
98 3rd notch
99 4th cutout
100, 200 ... Micro electron gun module chip
110 ... sixth alignment mark
111 ... 7th alignment mark
122 ... Power supply wire
120 ... DC power supply
121 ... heater
130 ... Silicon wafer
131, 131_-1, 131_-2… Microfield emitter chip
132 ... 1st alignment mark
133: Second alignment mark
135: silicon oxide (SiO)
136 gate electrode
137: Silicon exposed surface

Claims (7)

A substrate,
A plurality of emitters formed on the substrate,
A first insulating layer formed on the substrate and having a first through hole for passing electrons from the emitter;
Is formed on the first insulating layer has a first opening for passing the electrons, a gate electrode layer is a gate voltage to a gate electrode that will be supplied,
Formed in the front Kige over gate electrode on Rutotomoni, wherein a second through-hole for passing electrons, the second through-hole provided corresponding to the entire positions of the plurality of emitters Yes, and a thick second insulating layer than the film thickness is 10 [mu] m,
An accelerating electrode layer formed on the second insulating layer and having a second opening for allowing the electrons to pass therethrough, to which an accelerating voltage for accelerating the electrons is supplied;
The second insulating layer is formed of a glass plate, and the second openings provided in the accelerating electrode layer are provided corresponding to each of the plurality of emitters. A micro electron gun formed at a corresponding position . 2. The micro electron gun according to claim 1, wherein a plurality of the gate electrodes are provided in association with each of the plurality of emitters. 3. A substrate,
A plurality of emitters formed on the substrate and emitting an electron beam;
An insulator plate joined to the substrate on the first surface by an anodic bonding method and having a second through hole provided corresponding to the entire arrangement position of the plurality of emitters;
A plurality of electrode pads provided on the substrate on which the plurality of emitters are formed, and a bonding voltage applied when bonding the substrate and the insulator plate ;
A plurality of openings are formed on a second surface of the insulator plate opposite to the first surface and provided at positions corresponding to respective arrangement positions of the plurality of emitters, An accelerating electrode layer for accelerating the electron beam;
A micro electron gun with
The insulator plate and the acceleration electrode layer pass the electron beam,
The said electron pad functions as a gate electrode, The micro electron gun characterized by the above-mentioned. A microfield emitter chip having a plurality of emitters, a gate electrode for supplying a gate voltage, and a bonding electrode, and an electrode pad for applying a bonding voltage to the bonding electrode are formed on a first wafer. An emitter chip forming process,
Forming an accelerating electrode for accelerating electrons emitted from the emitter on a second wafer, the accelerating electrode having a plurality of openings at positions corresponding to respective arrangement positions of the plurality of emitters ; An accelerating electrode forming step,
An insulator forming step of forming an insulator having openings or cutouts for passing the electrons, the openings or cutouts provided corresponding to the entire arrangement positions of the plurality of emitters ; ,
A first bonding step of bonding the first wafer and the insulator by an anodic bonding method;
A second bonding step of bonding the second wafer and the insulator by an anodic bonding method;
A cutting step of separating into individual micro electron gun module chips,
A method for manufacturing a micro electron gun, comprising: A plurality of emitters and a gate electrode to which a gate voltage is supplied on a conductive wafer, an emitter chip forming step of forming a microfield emitter chip having a bonding electrode,
An accelerating electrode for accelerating electrons emitted from the emitter on the wafer, the accelerating electrode having a plurality of openings at positions corresponding to respective arrangement positions of the plurality of emitters ; Forming step;
An insulator forming step of forming an insulator having openings or cutouts for passing the electrons, the openings or cutouts provided corresponding to the entire arrangement positions of the plurality of emitters ; ,
A first bonding step of bonding the conductive wafer and the insulator by an anodic bonding method;
A second bonding step of bonding the wafer and the insulator by an anodic bonding method;
A cutting step of separating into individual micro electron gun module chips,
A method for manufacturing a micro electron gun, comprising: A microfield emitter chip having a plurality of emitters and a bonding electrode serving as a gate electrode for supplying a gate voltage, and an electrode pad for applying a bonding voltage to the bonding electrode on a first wafer. an emitter chip forming step of forming,
Forming an accelerating electrode for accelerating electrons emitted from the emitter on a second wafer, the accelerating electrode having a plurality of openings at positions corresponding to respective arrangement positions of the plurality of emitters ; An accelerating electrode forming step,
An insulator forming step of forming an insulator having openings or cutouts for passing the electrons, the openings or cutouts provided corresponding to the entire arrangement positions of the plurality of emitters ; ,
A first bonding step of bonding the first wafer and the insulator by an anodic bonding method;
A second bonding step of bonding the second wafer and the insulator by an anodic bonding method;
A cutting step of separating into individual micro electron gun module chips,
A method for manufacturing a micro electron gun, comprising: An emitter tip forming step of forming a microfield emitter tip having a plurality of emitters and a bonding electrode acting as a gate electrode to which a gate voltage is supplied on a conductive wafer;
An accelerating electrode for accelerating electrons emitted from the emitter on the wafer, the accelerating electrode having a plurality of openings at positions corresponding to respective arrangement positions of the plurality of emitters ; Forming step;
An insulator forming step of forming an insulator having openings or cutouts for passing the electrons, the openings or cutouts provided corresponding to the entire arrangement positions of the plurality of emitters ; ,
A first bonding step of bonding the conductive wafer and the insulator by an anodic bonding method;
A second bonding step of bonding the wafer and the insulator by an anodic bonding method;
A cutting step of separating into individual micro electron gun module chips,
A method for manufacturing a micro electron gun, comprising:

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