JP6208451B2 - Circuit board, electron beam generator, electron beam irradiation apparatus, electron beam exposure apparatus, and manufacturing method - Google Patents

Description

  The present invention relates to a circuit board, an electron beam generating apparatus, an electron beam irradiation apparatus, an electron beam exposure apparatus, and a manufacturing method.

Conventionally, in a semiconductor integrated circuit provided with a fine pattern, an electron beam exposure apparatus is used, and the electron beam is directly drawn on a semiconductor substrate in accordance with pattern data to form the fine pattern (for example, Patent Documents 1 and 2). reference).
Patent Literature 1 JP 2007-329220 A Patent Literature 2 JP 9-245708 A Non Patent Literature 1 PNMinh, LTTTuyen, T. Ono, H. Mimura, K. Yokoo and M. Esashi: Carbon nanotube on a Si tip for electron field emitter, Jpn. J. Appl. Phys., 41 Part2, 12A (2002), L1409-L1411
Non-Patent Document 2 PNMinh, LTTTuyen, T. Ono, H. Miyashita, Y. Suzuki, H. Mimura and M. Esashi: Selective growth of carbon nanotubes on Si microfabricated tips and application for electron field emitters, J. Vac. Sci. Technol. B 21, 4, (2003), 1705-1709
Non-Patent Document 3 PNMinh, T. Ono, N. Sato, H. Mimura and M. Esashi: Microelectron field emitter array with focus lenses for multielectron beam lithography based on silicon on insulator wafer, J. Vac. Sci. Technol., B22 , 3 (2004) 1273-1276
Non-Patent Document 4 JHBae, PNMinh, T. Ono and M. Esashi: Schottky emitter using boron-doped diamond, J. Vac. Sci. Technol., B22, 3 (2004) 1349-1352
Non-Patent Document 5 C.-H. Tsai, T. Ono and M. Esashi: Fabrication of diamond Schottky emitter array by using electrophoresis pre-treatment and hot-filament chemical vapor deposition, diamond and related materials, 16 (2007) 1398- 1402

  However, the throughput of the electron beam exposure apparatus has been reduced due to the miniaturization of the pattern to be drawn and the increase in the diameter of the semiconductor wafer. For example, since the number of pixels to be drawn has increased by about 20,000 times in about 30 years, there has been a case where one semiconductor wafer is drawn over 10 hours or more. In order to improve the throughput, there is a trend to use a plurality of electron beams. However, when actually manufactured and operated, it is difficult to image a plurality of electron beams on the same plane. It was causing distortion. Also, when adjusting blur, distortion, etc. with an electronic circuit, designing a highly-integrated and high-breakdown-voltage circuit board corresponding to a plurality of electron beams is time-consuming and difficult to manufacture.

  In the first aspect of the present invention, the cell region includes a circuit region in which an electronic circuit is provided and a non-circuit region excluding the circuit region, a plurality of cells having a predetermined shape, and a plurality of cells By arranging the cells, a plurality of non-circuit areas are formed adjacent to each other without including a circuit area, and the processing areas are provided on the same substrate. Provided are a circuit board, an electron beam generating apparatus, an electron beam irradiation apparatus, and an electron beam exposure apparatus, each including an insulating portion for insulation.

  According to a second aspect of the present invention, there is provided a method of manufacturing a circuit board, comprising a circuit region including an electronic circuit and a non-circuit region excluding the circuit region in a cell region, and having a predetermined shape. Forming a plurality of cells arranged on a substrate, and forming an insulating portion in a processing region on the substrate that electrically insulates between the plurality of circuit regions on the same substrate, The step of arranging the plurality of cells on the substrate includes the step of forming a processing region in which the plurality of non-circuit regions are formed adjacent to each other without including the circuit region by arranging the plurality of cells. Production method.

  It should be noted that the above summary of the invention does not enumerate all the necessary features of the present invention. In addition, a sub-combination of these feature groups can also be an invention.

A configuration example of an electron beam exposure apparatus 1000 according to the present embodiment is shown together with a semiconductor wafer 10. A configuration example of an electron beam irradiation apparatus 100 according to the present embodiment is shown together with a semiconductor wafer 10. The structural example of the electron beam generator 200 which concerns on this embodiment is shown. The structural example of the circuit board 220 which concerns on this embodiment is shown. The structural example of the some cell 510 of the circuit board 220 which concerns on this embodiment is shown. The structural example of sectional drawing of the circuit board 220 which concerns on this embodiment is shown. An example of the manufacturing flow which forms the circuit board 220 which concerns on this embodiment is shown. The modification of the circuit board 220 which concerns on this embodiment is shown. A modification of the electron beam exposure apparatus 1000 according to this embodiment is shown together with the semiconductor wafer 10.

  Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the invention according to the claims. In addition, not all the combinations of features described in the embodiments are essential for the solving means of the invention.

  FIG. 1 shows a configuration example of an electron beam exposure apparatus 1000 according to this embodiment together with a semiconductor wafer 10. The electron beam exposure apparatus 1000 includes an electron beam irradiation apparatus 100 that irradiates a plurality of electron beams. The electron beam irradiation apparatus 100 according to this embodiment corrects and reduces blurring, distortion, and the like of an image drawn by a plurality of electron beams by a driving circuit using a semiconductor electronic circuit. The electron beam exposure apparatus 1000 draws a fine pattern on the semiconductor wafer 10 or the like using the electron beam irradiation apparatus 100.

  Here, the semiconductor wafer 10 may be a plate-like substrate formed by processing a crystal of a semiconductor material such as silicon, silicon carbide, germanium, gallium arsenide, gallium nitride, gallium phosphide, or indium phosphide. The electron beam exposure apparatus 1000 includes an electron beam irradiation apparatus 100, a stage unit 110, a storage unit 120, a control unit 130, a communication unit 140, and a computer unit 150.

  The electron beam irradiation apparatus 100 is an electron column that irradiates a plurality of electron beams. The electron beam irradiation apparatus 100 draws a predetermined drawing pattern by irradiating the surface of the semiconductor wafer 10 with a plurality of electron beams. Details of the electron beam irradiation apparatus 100 will be described later.

  The stage unit 110 places an object to be irradiated with an electron beam. In the figure, an example in which the object is a semiconductor wafer 10 is shown. The stage unit 110 moves the mounted semiconductor wafer 10 in the horizontal direction, and causes the electron beam irradiation apparatus 100 to draw a predetermined fine pattern on one surface of the semiconductor wafer 10 at a predetermined position.

  The stage unit 110 includes, for example, an XY stage that moves on a horizontal plane of the stage. In addition, the stage unit 110 may include a θ stage that rotates around a predetermined rotation axis. The stage unit 110 may further include a tilt stage that adjusts the horizontal position of the stage. The stage unit 110 may further include a Z stage that moves the semiconductor wafer 10 in the vertical direction and adjusts the distance between the semiconductor wafer 10 and the electron beam irradiation apparatus 100.

  The storage unit 120 stores drawing pattern information drawn by the electron beam irradiation apparatus 100. Here, the drawing pattern information may be position information on one surface of the semiconductor wafer 10, information on whether or not to irradiate an electron beam, and the like. The storage unit 120 may store predetermined drawing pattern information in advance.

  The control unit 130 is connected to the electron beam irradiation apparatus 100 and the storage unit 120, and transmits a control signal for causing the electron beam irradiation apparatus 100 to output a plurality of electron beams according to the drawing pattern information stored in the storage unit 120. To do. The control unit 130 may be connected to the stage unit 110 and may transmit a control signal for moving the stage unit 110 according to the drawing pattern information stored in the storage unit 120. In addition, the control unit 130 may transmit a control signal to the electron beam irradiation apparatus 100 and / or the stage unit 110 according to the instruction signal received via the communication unit 140.

  The communication unit 140 connects the control unit 130 and the computer unit 150. The communication unit 140 may have a general-purpose or dedicated interface, and the control unit 130 and the computer unit 150 may be connected to communicate with each other. The communication unit 140 may use a general-purpose high-speed serial interface or parallel interface such as Ethernet (registered trademark), USB, or Serial RapidIO. The communication unit 140 may connect the control unit 130 and the computer unit 150 wirelessly.

  The computer unit 150 transmits an instruction signal for operating the electron beam irradiation apparatus 100 and / or the stage unit 110 to the control unit 130. The computer unit 150 may execute an operation program for operating the electron beam exposure apparatus 1000 and transmit an instruction signal according to the operation program. The computer unit 150 may have an input device for inputting a user instruction, and may transmit an instruction signal according to the user instruction. The computer unit 150 may be a personal computer or a server machine.

  FIG. 2 shows a configuration example of the electron beam irradiation apparatus 100 according to this embodiment together with the semiconductor wafer 10. FIG. 2 shows a configuration example of a vertical cross section of the electron beam irradiation apparatus 100. The electron beam irradiation apparatus 100 includes an electron beam generation apparatus 200, an acceleration electrode 230, and an electron lens 240.

  The electron beam generator 200 generates a plurality of electron beams according to the control signal. The electron beam generator 200 is a surface electron beam source in which a plurality of electron beam generation sources 212 are arranged. The electron beam generator 200 includes a substrate 210 and a circuit substrate 220.

  The substrate 210 is provided with a plurality of electron beam generation sources 212. The plurality of electron beam generation sources 212 may be arranged in a matrix on one surface of the substrate 210. Instead, the plurality of electron beam generation sources 212 are concentric with respect to the center of the surface electron beam source. May be arranged. Details of the electron beam generation source 212 will be described later. The substrate 210 is, for example, a semiconductor crystal such as silicon.

  The circuit board 220 is formed on the other surface of the substrate 210, and outputs an electron beam from the plurality of electron beam generation sources 212. The circuit board 220 is formed with a circuit for supplying a driving voltage for driving each of the plurality of electron beam generation sources 212. The circuit board 220 receives a control signal from the control unit 130 and outputs an electron beam from the plurality of electron beam generation sources 212 according to the drawing pattern information.

  One surface of the circuit board 220 is bonded to the board 210. As an example, the circuit board 220 is formed of a semiconductor substrate such as silicon. The circuit board 220 is substantially the same as or similar to the thermal expansion coefficient of the board 210 to such an extent that the board 210 or the circuit board 220 is not bent or peeled even when the temperature rises when the electron beam generator 200 is driven. It may be formed of a material having a thermal expansion coefficient of Details of the circuit board 220 will be described later.

  The acceleration electrode 230 is provided on the side of the electron beam generator 200 that outputs the electron beam, and a voltage higher than that of the electrode that outputs the electron beam of the electron beam generator 200 is applied to accelerate the electron beam. The acceleration electrode 230 is formed with a plurality of through holes respectively corresponding to the plurality of electron beam generation sources 212, and allows the plurality of electron beams to pass therethrough. The accelerating electrode 230 may have a plurality of through holes arranged in a matrix corresponding to the plurality of electron beam generation sources 212, or may be arranged concentrically instead. A constant voltage is applied to the acceleration electrode 230, and as an example, approximately 0V is applied.

  The electron lens 240 reduces the drawing pattern of a plurality of electron beams output from the electron beam generating apparatus 200 to a predetermined magnification and irradiates the semiconductor wafer 10 as an object. For example, the electron lens 240 reduces the drawing pattern drawn by a plurality of electron beams to 1/100 or less. The electron lens 240 has a coil part 242, a lens part 244, and a converging part 246.

  The coil unit 242 controls the deflection of the plurality of electron beams in the XY directions. That is, the coil unit 242 controls the beam shape of the electron beam on the surface of the semiconductor wafer 10 where the electron beam is irradiated. The coil unit 242 may be a rotation coil that corrects the correspondence between the X axis or Y axis of the electron beam irradiation apparatus 100 and the X axis or Y axis on the surface of the semiconductor wafer 10. The coil unit 242 may correct the amplitudes of the beam diameter on the surface of the semiconductor wafer 10 in the X and Y directions.

  The lens unit 244 images a plurality of electron beams on the surface of the semiconductor wafer 10. The lens unit 244 may constitute a telecentric lens system and functions as an objective lens of the electron beam generator 200.

  The converging unit 246 applies an acceleration electric field and / or a deceleration electric field to a plurality of electron beams. The converging unit 246 narrows and converges the thickness and bundle of a plurality of electron beams, and irradiates the semiconductor wafer 10 that is a target with an electron beam having a predetermined energy.

  The electron beam irradiation apparatus 100 according to this embodiment includes the electron beam generation apparatus 200 that generates a plurality of electron beams such as a surface electron beam source, and irradiates the sample with a plurality of electron beams from one electron column. Improve throughput. Conventionally, it has been difficult to manufacture such an electron beam generating apparatus 200 that generates a plurality of electron beams. However, the electron beam generating apparatus 200 according to the present embodiment can be simplified by a manufacturing process such as a semiconductor manufacturing process. Can be manufactured.

  FIG. 3 shows a configuration example of the electron beam generator 200 according to the present embodiment. The electron beam generator 200 has a plurality of electron emission units, accelerates and focuses the electrons emitted from each of the plurality of electron emission units, and outputs the electrons as a plurality of electron beams. As described with reference to FIG. 2, the electron beam generator 200 includes the substrate 210 and the circuit substrate 220. Further, the electron beam generator 200 may include a voltage supply unit 202 that supplies a drive voltage to each unit. In the electron beam generator 200, the first electrode unit 310 is connected via the barrier unit 330.

  The voltage supply unit 202 includes a constant voltage generation circuit and / or a constant current generation circuit, and a plurality of electrode units 204, and supplies a drive voltage to each connection destination connected to each electrode unit 204. The plurality of electrode portions 204 may be connected to a plurality of connection destinations by wire bonding or the like. As an example, the voltage supply unit 202 is provided on the surface of the circuit board 220 opposite to the board 210 side.

  Here, the electrode portion described in the present embodiment may include nickel, gold, chromium, titanium, aluminum, tungsten, palladium, rhodium, platinum, copper, ruthenium, indium, iridium, osmium, and / or molybdenum. Further, the electrode portion may be an alloy of two or more materials including these materials.

  The substrate 210 is provided with a plurality of recesses 214, an isolation part 340, and a third electrode part 350. Each of the plurality of recesses 214 has a concave surface. In addition, each of the plurality of recesses 214 may be formed in a spherical shape or a parabolic shape.

  As an example, each of the plurality of recesses 214 is formed by isotropic etching to form an electron beam generation source 212 that generates an electron beam. For example, the plurality of recesses 214 are formed by wet etching. The electron beam generation source 212 includes a polysilicon layer 216, a first insulating film 215, a second insulating film 218, an electron emission unit 300, a first electrode unit 310, a second electrode unit 320, and a barrier unit 330. Including.

  Polysilicon layer 216 is formed on the surface of substrate 210 where a plurality of recesses 214 are formed. At least a part of the polysilicon layer 216 formed in the recess 214 becomes an electron-emitting portion 300 that is anodically activated and nanocrystallized.

The first insulating film 215 and the second insulating film 218 are formed on the surface of the substrate 210 where the polysilicon layer 216 is formed. The first insulating film 215 and the second insulating film 218 electrically insulate the polysilicon layer 216 of the adjacent electron beam generation source 212 and prevent a leakage current from being generated through the polysilicon layer 216. . For example, the first insulating film 215 is a SiO ₂ film formed by thermal oxidation, and the second insulating film 218 is a SiN film formed by a CVD method or the like.

  The electron emission unit 300 is provided in each of the plurality of recesses 214 and emits electrons. The plurality of recesses, that is, the plurality of electron emission units 300, are arranged in a matrix on one surface of the substrate 210, and each emits electrons according to a driving voltage. In addition, each of the plurality of electron emission units 300 includes a nanocrystal. For example, the electron emission unit 300 is formed of nanocrystalline silicon. Nanocrystalline silicon forms a surface oxide film that functions as an electron tunneling barrier, and a plurality of nanocrystalline silicons are arranged to form a column connecting the electron tunneling barriers.

  In such an array of electron tunnel barriers, a voltage is applied to the barriers, whereby electrons passing through the barriers can be controlled in a minute unit such as several units. Therefore, the electron emission part 300 can control the amount of electron emission precisely and with good reproducibility by having a nanocrystal.

  Further, when the electron emission unit 300 is formed of nanowires in which a plurality of such nanocrystalline silicons are arranged, the nanowires are not formed perpendicular to the surface that outputs electrons, and the output surface depends on the crystal orientation. May be tilted with respect to the normal. In this case, the electron emission unit 300 may output electrons in a direction different from the normal direction of the output surface. In this case, the electron emission unit 300 determines the electron emission amount by multiplying the distribution of the tunnel probability in a different direction with respect to the normal of the output surface and the distribution in which the nanowire emits electrons in the direction.

  Since the electron emission unit 300 includes the concave portion 214, it is possible to output more electrons as an effective electron beam to the outside as compared with the amount of electron emission when the concave shape is flat. . For example, when the electron emission part 300 is formed in a flat shape by forming a direction in which the electron emission distribution is higher and / or a direction in which the tunnel probability distribution is higher in the direction in which the electron beam is output. More electrons can be output as an electron beam than the amount of emitted electrons. As an example, the shape of the recess 214 is such that the direction in which electrons are emitted from the plurality of electron emission units 300 and the direction in which multiplication of the tunnel probability of electrons in that direction becomes larger is the corresponding opening of the first electrode unit 310. Turn to.

  Each of the plurality of electron emission units 300 may include an insulating film that tunnels electrons to be emitted instead of the nanocrystal. Since such an insulating film can be adjusted by the probability of tunneling the amount of electrons emitted, the amount of electrons emitted can be controlled by the material, film thickness, and voltage applied to the insulating film. it can.

  The first electrode unit 310 is provided corresponding to each of the plurality of electron emission units 300, accelerates the electrons emitted by the corresponding electron emission unit 300, and forms an electron beam from the recess 214 provided in the electron emission unit 300. Output. Each of the plurality of first electrode portions 310 has an opening 312 and is formed in a plate shape on one surface of the substrate 210 where the plurality of recesses 214 are provided, and from the opening 312 due to a potential difference with the corresponding recess 214. The electron beam is focused and output. The opening 312 is formed near the center of the first electrode unit 310 and / or the electron emission unit 300. The opening 312 may be a circular through hole.

  In the drawing, the first electrode part 310a is provided corresponding to the electron emission part 300a, and shows an example in which electrons emitted from the electron emission part 300a are accelerated and output as an electron beam from the opening 312a. Similarly, the 1st electrode part 310b is provided corresponding to the electron emission part 300b, and accelerates the electron which the electron emission part 300b discharge | releases. Here, the plurality of first electrode portions 310 (the first electrode portion 310a and the first electrode portion 310b in the example in the figure) are electrically connected, and a predetermined constant voltage is applied thereto.

  The first electrode unit 310 may include a connection unit that is electrically connected to an electrode or the like provided outside the substrate 210 and to which a driving voltage is applied. The connection part may be an electrode part in which a conductive material is further formed on a part of the first electrode part by plating or the like. The connecting portion may be connected to an external electrode by wire bonding or the like.

  The second electrode portion 320 is provided in each of the plurality of recesses 214 and is formed of a conductive material that covers the recesses 214. The second electrode unit 320 causes the electrons emitted from the electron emission unit 300 to be output as an electron beam from the opening 312 due to a potential difference from the first electrode unit 310. Here, the second electrode unit 320 is formed to be thin enough to pass electrons emitted from the electron emission unit 300. The plurality of second electrode portions 320 provided in the plurality of recesses 214 are electrically connected, and a predetermined constant voltage is applied thereto.

  Here, the first electrode part 310 and the second electrode part 320 may be applied with a driving voltage at which the potential difference between these electrodes is several tens to several hundreds volts. Preferably, the first electrode unit 310 and the second electrode unit 320 are each applied with a driving voltage having a potential difference of several hundreds of volts. As an example, the first electrode part 310 and the second electrode part 320 are each applied with a driving voltage with a potential difference of 150V. The second electrode part 320 includes a connection part 322.

  The connection part 322 is an electrode part formed to be thicker in the second electrode part 320, and is electrically connected to an electrode or the like provided outside the substrate 210 and applied with a driving voltage. The connection part 322 may be an electrode part in which a conductive material is further formed on a part of the second electrode part by plating or the like. The connection portion 322 may be connected to an external electrode by wire bonding or the like.

  The barrier portion 330 is provided at a position corresponding to the plurality of recesses 214 between the plurality of first electrode portions 310 and the substrate 210, and is formed of an insulating material. The barrier unit 330 separates a predetermined distance between the substrate 210 and the first electrode unit 310 and supports the first electrode unit 310 while electrically connecting the first electrode unit 310 and the second electrode unit 320. Insulate. The barrier portion 330 may be formed of a resin or the like, and may instead be a silicon oxide film formed by a CVD method or the like.

  The electron beam generation source 212 described above applies electrons from the opening 312 by applying an electric field generated by a driving voltage applied to each of the first electrode unit 310 and the second electrode unit 320 to electrons emitted from the electron emission unit 300. Generate a beam. Here, in the electron beam generation source 212, the concave portion 214 is formed in a concave shape, a spherical shape, or a parabolic shape, so that the electron emission surface of the electron emission unit 300 is also concave, spherical, or It is formed in a parabolic shape.

  As a result, the electron beam generation source 212 can easily focus the electron emitting unit 300 on the opening 312 by aligning the direction in which the electron emitting unit 300 emits electrons with the direction of the opening 312. That is, the electron beam generation source 212 can increase the number of electrons focused on the opening 312 and increase the density of the generated electron beam.

  The electron beam generation source 212 irradiates the semiconductor wafer 10 with the generated electron beam through the subsequent electron lens 240. Here, the electron lens 240 may have an aberration that causes blurring and / or distortion or the like in the image formation of the electron beam, like the optical lens or the like. For example, the electron lens 240 may shorten the focal position of electrons traveling near the outside of the beam compared to electrons traveling near the center of the electron beam to be imaged.

  Therefore, the electron beam generation source 212 may correct the aberration while increasing the electron beam density by forming the electron emitting surface of the electron emitting unit 300 into a concave shape, a spherical shape, or a parabolic shape. . Here, when the electron beam generation source 212 makes the recess 214 flat, the electrons output from the region where the normal direction of the electron emission surface of the electron emission unit 300 is in the vicinity of the opening 312 are in the center of the electron beam. Easy to focus.

  Therefore, the electron emission unit 300 is directed to a region near the edge side of the emission surface with a distance between the region near the center of the emission surface and the opening 312 while directing the electron emission surface toward the opening 312. A surface for shortening the distance from the opening 312 is formed. That is, by forming the emission surface so that electrons that are likely to be focused outside the electron beam reach the opening 312 more quickly, the focal length of the electrons is increased. This is equivalent to the fact that the concave portion 214 concentrates the laminar flow of electrons emitted from a portion closer to the center point of the emission surface of the electron emission unit 300 to a position closer to the center point to generate negative aberration. .

  Thereby, the electron beam generation source 212 causes electrons traveling in the vicinity of the center of the electron beam to be generated (for example, in the vicinity of a perpendicular passing through the approximate center of the recess 214 indicated by AA ′ and BB ′ in FIG. 3). In comparison, the focal length of electrons traveling near the outside of the electron beam can be increased. For example, the electron beam generating source 212 increases the focal length of the electron beam as it moves away from the center of the optical axis of the electron beam, and concentrically distributes the focal length in a cross section perpendicular to the irradiation direction of the electron beam. To have. As described above, the electron beam generation source 212 can correct the aberration of the electron lens 240 by forming an emission surface corresponding to the aberration of the electron lens 240.

  In addition, since the region near the edge side of the emission surface of the electron emission unit 300 is closer to the outside of the electron beam generation source 212 than the region near the center, it is easily affected by an external electric field. That is, electrons output from the region near the edge side of the emission surface are likely to be output in a direction inclined from the normal line of the emission surface, and the focal length tends to be long. As described above, the electron beam generation source 212 forms a distribution of focal lengths in the electron beam to be output depending on the external electric field. Therefore, the shape of the emission surface of the electron emission unit 300 is adjusted according to such distribution. Thus, it is desirable to correct the aberration of the electron beam imaged on the semiconductor wafer 10.

  Here, the second electrode portion 320 forms an electrode that covers the recess 214, and keeps the recess 214 at the same potential. Accordingly, the second electrode unit 320 can reduce the influence of the external electric field while emitting electrons with a stable velocity distribution from the electron emission unit 300 and focusing the electrons in the vicinity of the opening 312.

  The isolation part 340 is formed by being filled with an insulating material. The isolation unit 340 is formed so as to surround each of the plurality of electron beam generation sources 212 and electrically isolates the electron beam generation sources 212 from each other. Thereby, each of the plurality of electron beam generation sources 212 is electrically insulated from each other. As an example, the isolation part 340 is a groove formed in a plurality of rings or lattices corresponding to the plurality of electron emission parts 300 on the surface of the substrate 210 opposite to the surface on which the plurality of recesses 214 are formed. Is filled with an insulating material such as resin.

  The third electrode unit 350 is formed on the lower surface of the substrate 210 opposite to the upper surface where the plurality of recesses 214 are formed, corresponding to each of the plurality of electron emission units 300. The third electrode unit 350 is applied with a driving voltage for emitting electrons from the plurality of electron emission units 300. The third electrode unit 350 may include a conductive film 352 formed on the lower surface of the substrate 210. The third electrode unit 350 is electrically connected to the circuit board 220.

  The circuit board 220 is formed on the other surface of the substrate 210 and individually supplies a driving voltage for emitting electrons from the plurality of electron emission units 300 to each of the plurality of electron emission units 300. Since each of the plurality of third electrode portions 350 to which the driving voltage is applied is electrically insulated by the isolation portion 340, the circuit board 220 corresponds to each of the plurality of third electrode portions 350. The driving voltage to be supplied can be supplied. For example, the circuit board 220 is formed on a semiconductor substrate, and one surface of the semiconductor substrate is bonded to the substrate 210.

  Here, the circuit board 220 has a plurality of electrode portions 222 corresponding to the third electrode portions 350 formed on the substrate 210, and the electrode portions 222 are connected to the corresponding third electrode portions 350 while being electrically connected. The driving voltage is supplied through the electrode unit 222. For example, the electrode portions 222 are formed at the same pitch as the third electrode portions 350 so as to correspond to the third electrode portions 350 formed on the substrate 210 at a pitch of about 100 μm. The electrode part 222 is formed of a conductive material, for example, a metal. The electrode unit 222 may include substantially the same material as the third electrode unit 350.

  The circuit board 220 may include a plurality of connection portions 224 that are electrically connected to external electrodes or the like and to which a drive voltage, a power supply voltage, and the like are applied. The connection portion 224 may be connected to an external electrode by wire bonding or the like.

  The circuit board 220 may superimpose a different offset bias on the drive voltage depending on the arrangement of the plurality of electron emission units 300. The plurality of electron emission units 300 are individually applied with a driving voltage to emit electrons, and the corresponding plurality of electron beam generation sources 212 generate a plurality of electron beams. The plurality of electron beam generation sources 212 causes the generated plurality of electron beams to be imaged by the subsequent electron lens 240 to irradiate the semiconductor wafer 10 with a drawing pattern.

  Here, the optical system such as the electron lens 240 gives a slight difference in focal position between the electron beam passing near the center of the lens and the electron beam passing near the outer edge of the lens, and blurs the drawn image by a plurality of electron beams. And may cause distortion. For example, the electron lens 240 may shorten the focal position with respect to an electron beam passing near the outer edge of the lens as compared with an electron beam passing near the center of the lens.

  Therefore, as an example, the voltage supply unit 202 and the circuit board 220 have a negative offset voltage having a larger absolute value than the offset voltage supplied to the electron beam generation source 212 that generates an electron beam passing through the vicinity of the center of the electron lens 240. Is supplied to an electron beam generation source 212 that generates an electron beam that passes through the vicinity of the outer edge of the electron lens 240. As a result, the voltage supply unit 202 and the circuit board 220 are generated by increasing the output speed of the electron beam passing through the vicinity of the outer edge of the electron lens 240 to increase the focal length, and cancel the focal position shortened by the electron lens 240. Can be corrected.

  Here, the plurality of electron emission units 300 may be distributed to a plurality of blocks according to their arrangement, and the voltage supply unit 202 and the circuit board 220 may supply an offset bias for each block. For example, among the plurality of electron emission units 300, the plurality of electron emission units 300 that are arranged near the center of the substrate 210 and emit an electron beam that passes through the vicinity of the center of the electron lens 240 are distributed to the same block. The The other electron emission units 300 are distributed to two or more blocks in a substantially concentric manner with the central block as the center.

  As described above, the plurality of electron emission units 300 are divided into two or more concentrically in the outer edge direction of the electron lens 240 with the electron emission unit 300 that outputs an electron beam passing near the center of the electron lens 240 as a central block. The electron emission unit 300 corresponding to the annular region is distributed as another block. The voltage supply unit 202 and the circuit board 220 apply a different offset bias for each block, thereby focusing the electron beam for each region concentrically divided around the electron beam passing near the center of the electron lens 240. The position can be adjusted, and the imaging of the drawing pattern can be corrected efficiently.

  For example, the voltage supply unit 202 applies a negative voltage of several kV to several tens of kV to the first electrode unit 310 and the second electrode unit 320. As an example, the voltage supply unit 202 applies −5 kV to the second electrode unit 320 corresponding to the electron emission unit 300 distributed in the center of the concentric circle, and −5 kV + 150 V to the corresponding first electrode unit 310.

In this case, the electron beam generation source 212 generates an electron beam by applying an electric field generated by a potential difference of 150 V to electrons emitted from the electron emission unit 300, and the generated electron beam is generated with a potential difference of about 5 kV from the acceleration electrode 230. Accelerate. The voltage supply unit 202, from the center of the block every n block varies toward the outer edge, the corresponding -5 kV + _{X n} V to the second electrode portion 320, the first electrode portion corresponding to apply a -5kV + 150V + _{X n} V . Here, X _n V is, for example, about −several V to −hundreds and several tens V.

In addition, the circuit board 220 applies a driving voltage to the third electrode unit 350 to emit electrons from the electron emission unit 300. As an example, the circuit board 220 applies a voltage lower than the second electrode unit 320 by about 15 V to emit electrons from the electron emission unit 300 (electron emission on). The circuit board 220 applies −5 kV−15 V + X _n V to the corresponding third electrode part 350 every time n blocks are different from the central block toward the outer edge. In addition, the circuit board 220 applies substantially the same voltage as the second electrode unit 320 when stopping the electron emission of the electron emission unit 300 (electron emission off). That is, as an example, the circuit board 220 applies −5 kV + X _n V to the third electrode unit 350 to turn off electron emission.

As described above, the voltage supply unit 202 and the circuit board 220 apply the X _n V different offset voltage every time the block of the electron beam generation source 212 is different, while the first electrode unit 310 and the second electrode unit 320 A predetermined potential difference is applied between the second electrode portion 320 and the third electrode portion 350. As an example, _{X n is, X 0 = 0, X 1} = -20, X 2 = -45, X 3 = -80, X 4 = -125, and ..., the absolute value in proportion to the value of n Is an increasing value. As a result, the voltage supply unit 202 and the circuit board 220 output the electron beams from the plurality of electron beam generation sources 212 with substantially the same electron density, while the electrons are generated by the offset voltage corresponding to the block in which the electron beam generation source 212 is located. The focal position of the electron beam can be finely adjusted by changing the beam speed.

  The electron beam generating apparatus 200 according to this embodiment has a plurality of electron beam generating sources 212, and applies a driving voltage to the corresponding third electrode portion 350 of the electron beam generating source 212 that should output the electron beams. Thus, the plurality of electron beam generation sources 212 can be individually driven to output an electron beam. Thereby, the electron beam irradiation apparatus 100 including the electron beam generation apparatus 200 can irradiate the object with a predetermined drawing pattern by a plurality of electron beams.

  The electron beam generating apparatus 200 according to the present embodiment described above divides the plurality of electron beam generation sources 212 into a plurality of blocks, and applies different voltages to the first electrode unit 310, the second electrode unit 320, and the first block. An example in which the voltage is applied to each of the three electrode portions 350 has been described. In this case, the first electrode part 310 and the second electrode part 320 are electrically insulated at least for each block. Moreover, the voltage supply part 202 supplies the voltage corresponding to the said block to the 1st electrode part 310 and the 2nd electrode part 320 which were insulated for every block as an example. That is, different predetermined power supply and ground voltages are applied to each block in each block.

  Here, the electron beam generation source 212 provided in the electron beam generation apparatus 200 includes a plurality of recesses 214 and a barrier unit 330 formed by a separate process at a position corresponding to the plurality of recesses 214. As a result, the electron beam generator 200 generates a plurality of electron beams without precisely forming a cylindrical hole having a bottom having a predetermined shape such as a concave shape, a spherical shape, or a parabolic shape. The source 212 can be easily formed. As described above, the electron beam generating apparatus 200 can include a plurality of electron beam generating sources 212 formed with a small area and a high density. Therefore, the electron beam irradiation apparatus 100 can irradiate 10,000 electron beams from the electron beam generation sources 212 arranged in a 100 × 100 matrix, for example, while reducing the size of the apparatus.

  The electron beam generation source 212 is formed in each of a plurality of recesses 214 formed on the semiconductor substrate by a simple method such as isotropic etching. Therefore, the plurality of electron beam generation sources 212 can be formed on the substrate 210 by a semiconductor manufacturing process or the like. That is, for example, the electron beam generation sources 212 are formed in an area of 1 cm × 1 cm of the substrate 210 and arranged in a matrix of 100 × 100. As described above, the electron beam generation source 212 is formed in a matrix shape with a pitch of about 100 μm, so that the object can be irradiated with a drawing pattern with a pitch of about 1 μm or less by the electron lens 240.

  The circuit board 220 must be provided with the electrode unit 222 and the drive circuit corresponding to the plurality of electron beam generation sources 212 mounted at such a high density. In addition, the circuit board 220 controls the on / off control of the electron emission from the electron beam generation source 212 in the range of several V to several tens of V, and several V to several V depending on the position of the electron beam generation source 212. The acceleration voltage of several kV to several tens of kV must be adjusted in the range of one hundred volts.

  However, even if high-density mounting and adjustment in the range of several V to several tens V are realized using a circuit using a semiconductor substrate or the like, the semiconductor substrate does not have a withstand voltage exceeding several tens V, so that it can be actually operated. It was difficult. Further, when forming an insulating region in order to improve the breakdown voltage of the semiconductor substrate, it has been time-consuming and difficult to manufacture it by coexisting with a high-density circuit.

  Therefore, the circuit board 220 according to the present embodiment provides a region that does not include the circuit region by rotating or inverting and arranging the cells of a predetermined shape corresponding to the electron beam generation source 212, By forming an insulating portion in the region, circuit design is facilitated. FIG. 4 shows a configuration example of the circuit board 220 according to the present embodiment.

  FIG. 4 shows an example of the surface of the circuit board 220 on which electronic circuits are provided. In FIG. 4, a substrate 210 having a plurality of electron beam generation sources 212 is connected to a square indicated by a dotted line. As an example, the electronic circuit of the circuit board 220 is divided into a plurality of blocks concentrically from a position corresponding to the center of the board 210.

  FIG. 4 shows an example in which a region within a rectangle indicated by a dotted line is concentrically divided into five blocks. The circuit board 220 includes a first block 402, a second block 404, a third block 406, a fourth block 408, a fifth block 410, a first block 422, and a second block 424.

  The circuit board 220 has an electronic circuit divided into a first block 402, a second block 404, a third block 406, a fourth block 408, and a fifth block 410 within a rectangular area indicated by a dotted line. In addition, each block is electrically connected to the corresponding electron beam generation source 212 among the plurality of electron beam generation sources 212 within the rectangular area indicated by the dotted line, and drives the corresponding electron beam generation source 212. Each has a plurality of cells including a driver circuit. The cell will be described later. Each block is provided with an insulating portion penetrating the circuit board 220 at the boundary with another block, and is electrically insulated from adjacent blocks.

  A circuit provided in each block is electrically connected to a connection unit 224 that transmits and receives an electric signal, a power source, and the like to the outside, for example, outside a square indicated by a dotted line. In this case, the circuits provided in the first block 402 and the second block 404 are each surrounded by adjacent blocks, and cannot be connected to the connection portion 224 on the same surface on the front surface side of the circuit board 220. Therefore, the circuits provided in the first block 402 and the second block 404 are connected to the connection portion 224 via the wiring on the back surface side of the circuit board 220 by vias or the like.

  For example, the circuit of the first block 402 is connected to the corresponding connection unit 224 in the first block 422. In addition, the circuit of the second block 404 is connected to the corresponding connection unit 224 in the second block 424. Thus, at least one block of the plurality of blocks has a through via portion that electrically connects the front surface side and the back surface side of the circuit board 220, and is formed in the vicinity of the edge of the circuit board 220. Connected to the unit 224.

  Further, the circuits provided in the third block 406, the fourth block 408, and the fifth block 410 are electrically connected to the connection portion 224 on the surface side of the circuit board 220, for example. In this way, each of the electronic circuits divided on the surface of the circuit board 220 is electrically connected to the connection portion 224 provided near the edge of the surface of the circuit board 220 while being insulated at the divided boundary. Is done. As a result, the circuit board 220 is connected to the board 210 on the board surface, and can receive a power supply, a drive signal, and the like supplied from the outside from the connection unit 224 via wire bonding or the like.

  Instead, a part or all of the connection part 224 may be provided on the back side of the circuit board 220. In this case, part or all of the circuit on the front surface side of the circuit board 220 is connected to the connection portion 224 on the back surface side through a through via or the like that electrically connects the front surface side and the back surface side of the circuit board 220. . Then, an external power supply, a drive signal, and the like are supplied to the connection portion 224 provided on the front surface side and / or the back surface side of the circuit board 220 through wire bonding or the like.

  FIG. 5 shows a configuration example of a plurality of cells 510 of the circuit board 220 according to the present embodiment. FIG. 5 shows an example in which a part of the surface of the circuit board 220 shown in FIG. 4 is enlarged. FIG. 5 shows an example in which a plurality of rectangular cells 510 are arranged in a 5 × 9 matrix. The circuit board 220 includes a cell 510, a processing region 520, a through via part 530, and an insulating part 540.

  The cell 510 has a predetermined shape, and FIG. 5 shows an example having a square shape. Alternatively, the cell 510 may have a polygonal shape. As an example, the cells 510 have a hexagonal shape, and a plurality of cells 510 may be arranged in a honeycomb shape. Each of the plurality of cells 510 corresponds to each of the plurality of electron beam generation sources 212. That is, in the cell 510, an electronic circuit is formed in the cell region, and one cell 510 drives one corresponding electron beam generation source 212. The shape of the cell 510 and the horizontal (xy) cross-sectional shape of the electron beam generation source 212 may be substantially the same, and a plurality of the same may be arranged.

  For example, when the electron beam generation sources 212 are formed to be arranged in a matrix of 100 × 100 in an area of 1 cm × 1 cm of the substrate 210, the cell 510 corresponds to the electron beam generation source 212 and is a circuit board. In an area of 1 cm × 1 cm on 220, 100 × 100 matrix is arranged. For example, the cells 510 are formed in a matrix having a pitch of about 100 μm.

  The cell 510 includes a circuit region 512 provided with an electronic circuit and a non-circuit region 514 excluding the circuit region in the cell region. The circuit region 512 has a predetermined shape. For example, the circuit region 512 has a shape in contact with two adjacent sides of the cell region. For example, the circuit region 512 has a shape in contact with one side of the cell region and a part of each of the two sides sandwiching the one side. FIG. 5 shows an example in which the circuit region 512 has a pentagonal shape. In addition, the circuit region 512 may include, for example, a shape that is a mirror image of a predetermined shape.

  The circuit region 512 includes a drive circuit that is electrically connected to the corresponding electron beam generation source 212 among the plurality of electron beam generation sources 212 and drives the corresponding electron beam generation source 212. The plurality of circuit regions 512 each include an electrode portion 222 that is electrically connected to an external circuit or the like. Electronic circuits provided in the circuit region 512 are electrically connected to the corresponding electron beam generation sources 212 via the electrode portions 222, respectively.

  Here, the electrode portion 222 may be formed in a polygonal shape, or instead, may be formed in a circular shape. Further, the center of the electrode portion 222 may be formed so as to be shifted from the center of the cell 510. The electrode part 222 and the third electrode part 350 have a shape and a mutual shape so that the corresponding electrode part 222 and the third electrode part 350 are electrically connected when the substrate 210 and the circuit board 220 are bonded to each other. An arrangement may be defined.

  The non-circuit area 514 is an area excluding the circuit area 512 in the cell area. In the example of FIG. 5, the shape is a pentagon formed by removing the pentagonal circuit region 512 in the cell region. That is, for example, the plurality of cell regions have a rectangular shape, the circuit region 512 is in contact with two adjacent sides of the rectangle, and the non-circuit region 514 is in contact with the other two sides of the rectangle. A plurality of non-circuit regions 514 are connected to form a processing region 520 having a processable area.

  That is, the processing region 520 includes a plurality of cells 510 arranged so that a plurality of non-circuit regions 514 are formed adjacent to each other without including the circuit region 512. In the processed region 520, the through via portion 530 and the insulating portion 540 are formed. In FIG. 5, an example in which a cell 510 a, a cell 510 b, a cell 510 c, and a cell 510 d are arranged to form a processing region 520 surrounded by a plurality of circuit regions 512, and a through via portion 530 is formed in the processing region 520. Indicates.

  The processing region 520 is formed by connecting at least a part of the plurality of cells 510 by arranging the non-circuit region 514 over two or more cell regions by arranging the circuit region 512 by changing at least one of rotation and inversion. The In the example of FIG. 5, the cell 510b is a reverse (mirror image) of the cell 510a in the horizontal direction (x direction), the cell 510c is a rotation of the cell 510a by 180 degrees, and the cell 510d is the vertical direction (y direction) of the cell 510a. Is a reversal (mirror image).

  Thus, the plurality of cells 510 have at least three types of circuit regions 512 having three types of shapes obtained by rotating a predetermined shape by 90 degrees with respect to one direction on the circuit board 220. Cell 510 is included. As an example, the plurality of cells 510 includes three types of circuit regions 512 obtained by rotating the circuit region 512 included in the cells 510a counterclockwise by 90 degrees with respect to the y-axis direction on the circuit board 220. 510e, cell 510c, and cell 510f.

  The plurality of cells 510 have at least three types of circuit regions 512 having three types of shapes obtained by rotating a mirror image having a predetermined shape by 90 degrees with respect to one direction on the circuit board 220. Cell 510 may be included. As an example, the plurality of cells 510 are obtained by rotating the circuit region 512 included in the cell 510b, which is a horizontal mirror image of the cell 510a, counterclockwise by 90 degrees with respect to the y-axis direction on the circuit board 220. A cell 510g, a cell 510d, and a cell 510h having three types of circuit regions 512 are included.

  The through via portion 530 is provided in the processing region 520 and includes a through hole penetrating the front surface and the back surface of the circuit board 220 and a conductor. The through via portion 530 electrically connects the front surface side and the back surface side of the circuit board 220. The through via portion 530 is formed, for example, by forming an insulator on the wall surface of the through hole and insulating the conductor in the through hole from the substrate by the insulator. Alternatively, the through via portion 530 may have a conductor formed directly in the through hole.

  The through via portion 530 is provided in each of the first block 402 and the first block 422 as an example. In this case, the circuit region 512 on the front surface side of the circuit board 220 in the first block 402 includes the through via portion 530 of the first block 402, the wiring on the back surface side of the circuit substrate 220, and the through via portion 530 of the first block 422. To the connection portion 224 of the first block 422.

  The through via portion 530 is provided with a bonding pad 532 on the surface of the circuit board 220 where the circuit region 512 is provided. For example, the bonding pad 532 is formed by laminating a metal material or the like on the conductor of the through via portion 530. The bonding pad 532 is provided, for example, near the outer periphery of the circuit board 220 and functions as the connection portion 224.

  The bonding pad 532 is provided in the first block 402, the second block 404, the third block 406, the fourth block 408, and / or the fifth block 410, and functions as a test pad for the circuit region 512. That is, the bonding pad 532 can be used for an operation check of the circuit region 512 or the like when a probe or the like is physically contacted from the outside.

The insulating unit 540 is provided in the processing region 520 and electrically insulates the plurality of circuit regions 512 on the same substrate. The insulating part 540 is formed by embedding an insulator after the circuit board 220 is etched. Here, the insulating material is, for example, a polymer, polyimide, SiO ₂ film, SiN film, or the like.

  As described above, the plurality of cells 510 are divided into two or more block cell groups, and the insulating unit 540 electrically insulates at least one cell group from other cell groups. The insulating unit 540 may electrically insulate each of the two or more cell groups from the other cell groups. The insulating unit 540 of this embodiment is configured so that each of the first block 402, the second block 404, the third block 406, the fourth block 408, the fifth block 410, the first block 422, and the second block 424 Electrical isolation from the block.

  FIG. 6 shows a configuration example of a cross-sectional view of the circuit board 220 according to the present embodiment. 6 is an example of a cross-sectional view taken along line AA ′ of FIG. In FIG. 6, the same reference numerals are given to substantially the same operations as those of the circuit board 220 according to the present embodiment shown in FIG. 5, and the description thereof is omitted. The circuit board 220 further includes an insulating layer 550 and a back surface side wiring portion 560.

The insulating layer 550 covers at least part of the back side of the circuit board 220. The insulating layer 550 may cover the entire back side of the circuit board 220. The insulating layer 550 is, for example, a SiO ₂ film or a SiN film. The insulating layer 550 may function as a protective film on the back side of the circuit board 220.

  The back surface side wiring portion 560 is provided on the back surface side of the circuit board 220 and electrically connects the two or more through via portions 530. The back surface side wiring part 560 is a multilayer wiring formed in the insulating layer 550 as an example. The back surface side wiring part 560 is electrically insulated from the substrate by the insulating layer 550.

  As described above, the circuit board 220 according to the present embodiment is processed by connecting the non-circuit areas 514 by arranging the cells 510 in which the circuit areas 512 having a predetermined shape are changed by at least one of rotation and inversion. Region 520 is formed. Then, a through via portion 530 and an insulating portion 540 are provided in the processing region 520. As a result, the plurality of drive circuits in the plurality of cells 510 have electron beam generation sources 212 corresponding to different drive voltages for each of the plurality of cell groups obtained by dividing the plurality of cells 510 by the insulating unit 540. Can be supplied to. Therefore, for example, the potential of the substrate can be freely set for each block regardless of the breakdown voltage of a transistor or the like included in the electronic circuit. Further, such a circuit board 220 can be easily formed by using a normal semiconductor manufacturing process technique.

  For example, the shape of one circuit region 512 is set so that the area of the processing region 520 formed by connecting the non-circuit regions 514 of the cells 510 has a sufficient area to form the through via portion 530 and the insulating portion 540. Determine. Accordingly, the plurality of blocks can be insulated from each other by determining the arrangement of the plurality of cells 510 having the circuit region 512 so that the path of the processing region 520 in which the insulating portion 540 is provided is formed. That is, the circuit of the entire circuit board 220 can be designed simply by executing the shape of the circuit region 512 of one cell 510 and the circuit design within the shape and the arrangement of the plurality of cells 510.

  FIG. 7 shows an example of a manufacturing flow for forming the circuit board 220 according to the present embodiment. First, a plurality of cells 510 are formed on the circuit board 220 (S700). That is, a cell region 512 including an electronic circuit and a non-circuit region 514 excluding the circuit region 512 are included in the cell region, and a plurality of cells 510 having a predetermined shape are arranged on the substrate.

  The circuit board 220 is divided into a plurality of blocks corresponding to the blocks divided according to the offset voltage applied to the electron beam generation source 212, and an insulating portion 540 is provided so as to insulate the blocks. That is, by arranging a plurality of cells 510, a processing region 520 in which a plurality of non-circuit regions 514 are formed adjacent to each other without including the circuit region 512 is formed. The circuit board 220 is formed by arranging a plurality of cells 510 each having a circuit region 512 having a predetermined shape so that the insulating portion 540 is provided in the processing region 520.

  As an example, the plurality of cells 510 are semiconductor circuits formed on a silicon substrate or the like. In this case, the circuit board 220 has a CMOS circuit formed in the circuit region 512. That is, the electron beam generator 200 can be manufactured by a manufacturing process such as a semiconductor manufacturing process.

  Next, the circuit board 220 is etched (S710). The etching of the circuit board 220 is performed so as to penetrate the region where the insulating portion 540 of the processing region 520 is provided from the front surface side to the back surface side of the circuit substrate 220. Further, in the etching of the circuit board 220, the etching of the through hole of the through via part 530 may be performed at the same time. This can simplify the etching process.

  Here, the etching of the circuit board 220 is preferably performed from the back side of the circuit board 220. In this case, a support substrate is attached to the surface of the circuit board 220 for the purpose of preventing damage to the circuit board 220 and improving handling. The support substrate is, for example, a glass substrate, a ceramic substrate, or a semiconductor substrate. Moreover, the etching of the circuit board 220 is performed by reactive ion etching or the like as an example.

  Next, the insulating part 540 is formed (S720). The insulating unit 540 electrically insulates between the plurality of circuit regions 512 from the processing region 520 on the substrate on the same substrate. The insulating part 540 forms an insulating part 540 by embedding an insulating material in a region etched so as to penetrate the circuit board 220.

  Thereby, different blocks of the circuit board 220 are electrically insulated by the insulating material without being connected by the board material. Therefore, even if the circuit board 220 is supplied with a voltage in which a voltage up to several tens of kV and a different offset voltage between different blocks are superimposed, a plurality of electron beam generation sources 212 are generated without causing dielectric breakdown. Can be driven.

  Here, the through via portion 530 may be formed. The through via portion 530 is formed by embedding a conductor 534 after an insulating material is formed on the wall surface of the through hole of the circuit board 220. The insulating material of the through via part 530 may be substantially the same as the insulating material of the insulating part 540. The through via portion 530 is electrically connected to the back surface side wiring portion 560 on the back surface side of the circuit board 220. In this case, the insulating layer 550 is provided on the back side of the circuit board 220, and the back side wiring portion 560 is formed on the insulating layer 550. In addition, an insulating layer 550 may be further formed as a protective film after the back-side wiring portion 560 is formed.

  Next, a bonding pad 532 is formed on the surface side of the circuit board 220 (S730). As an example, the bonding pad 532 is formed so as to overlap the through via portion 530 of the circuit board 220. As described above, when the bonding pad 532 is provided directly above the through via portion 530 on the surface side of the circuit board 220 and the bonding pad 532 is connected to the circuit in the circuit region 512, the bonding pad 532 is simply probed. An inspection of the circuit area 512 can be performed. By the above flow, the circuit board 220 of the present embodiment capable of correcting the spherical aberration, the chromatic aberration and the like of the image drawn by the plurality of electron beams of the electron beam irradiation apparatus 100 that outputs the plurality of electron beams is formed. Can do.

  FIG. 8 shows a modification of the circuit board 220 according to the present embodiment. In the modification of FIG. 8, the same reference numerals are given to the substantially same operations as those of the circuit board 220 according to the present embodiment shown in FIG. In the modification of FIG. 8, the circuit region 512 of the cell 510 has a shape that contacts each part of two adjacent sides of the cell region. In other words, the circuit region 512 of the modified example of FIG. 8 has a narrower area shape than the circuit region 512 of FIG. Accordingly, the circuit region 512 may not include a shape that is a mirror image of the shape of the circuit region 512.

  That is, the plurality of cells 510 includes four types of cells 510 including three types of circuit regions 512 obtained by rotating a predetermined shape by 90 degrees with respect to one direction on the circuit board 220. It's okay. As an example, the plurality of cells 510 includes three types of circuit regions 512 obtained by rotating the circuit region 512 included in the cells 510a counterclockwise by 90 degrees with respect to the y-axis direction on the circuit board 220. 510b, cell 510c, and cell 510d.

  The circuit board 220 can form a processing region 520 corresponding to the through via portion 530 and the insulating portion 540 to be formed by arranging four types of the cell 510a, the cell 510b, the cell 510c, and the cell 510d. . As described above, the modified example of FIG. 8 can form the circuit board 220 using fewer types of cells 510.

  In the above embodiment, the circuit board 220 has been described as an example in which circuits for driving the plurality of electron beam generation sources 212 are formed. Instead of this, the circuit board 220 may be used in a device that uses a voltage in which an offset voltage of several V to several tens of V is superimposed on a high voltage exceeding several tens V as a driving voltage or a control voltage. The circuit board 220 can be used as a circuit that drives or controls a plurality of motors, power supplies, batteries, and the like.

  FIG. 9 shows a modification of the electron beam exposure apparatus 1000 according to this embodiment together with the semiconductor wafer 10. In the electron beam exposure apparatus 1000 of this modification, the same reference numerals are given to the same operations as those of the electron beam exposure apparatus 1000 according to the present embodiment shown in FIG. The electron beam exposure apparatus 1000 includes a plurality of electron beam irradiation apparatuses 100 that irradiate a plurality of electron beams. The electron beam exposure apparatus 1000 irradiates a plurality of electron beams and applies a drawing pattern corresponding to the drawing pattern information to the semiconductor wafer 10 that is an object. draw.

  Two or more electron beam irradiation apparatuses 100 are provided in the electron beam exposure apparatus 1000. In the drawing, an electron beam irradiation apparatus 100 shows an example in which a horizontal sectional area is formed smaller than the surface area of the semiconductor wafer 10 and a plurality of electron beam exposure apparatuses 1000 are provided. The plurality of electron beam irradiation apparatuses 100 draw a predetermined drawing pattern by irradiating the surface of the semiconductor wafer 10 with a plurality of electron beams, respectively. The plurality of electron beam irradiation apparatuses 100 may execute each drawing in parallel. Details of the electron beam irradiation apparatus 100 have already been described with reference to FIGS.

  The stage unit 110 moves the mounted semiconductor wafer 10 in the horizontal direction, and causes a plurality of electron beam irradiation apparatuses 100 to draw a predetermined fine pattern on one surface of the semiconductor wafer 10 at a predetermined position. The storage unit 120 stores drawing pattern information drawn by the plurality of electron beam irradiation apparatuses 100. The control unit 130 is connected to each of the plurality of electron beam irradiation apparatuses 100, and receives a control signal for causing each of the plurality of electron beam irradiation apparatuses to output a plurality of electron beams according to the drawing pattern information stored in the storage unit 120. Send.

  As described above, by using the electron beam generating apparatus 200 in which the plurality of electron beam generating sources 212 are formed integrally with the substrate 210, the electron beam irradiation apparatus 100 can be downsized, and the electron beam exposure apparatus 1000 can be downsized. A plurality of electron beam irradiation apparatuses 100 can be mounted. An electron beam exposure apparatus 1000 including two or more electron beam irradiation apparatuses 100 can irradiate the semiconductor wafer 10 with two or more drawing patterns in parallel, and has a throughput according to the number of electron beam irradiation apparatuses 100 to be mounted. Can be improved.

  In the above embodiment, the example in which the electron beam generator 200 and the electron beam irradiation apparatus 100 are used in the electron beam exposure apparatus 1000 has been described. Instead, the electron beam generating apparatus 200 and the electron beam irradiation apparatus 100 may be provided in an apparatus using an electron beam, such as an electron microscope, an electron beam microanalyzer, a cathode ray tube, a transmission tube, an imaging tube, a vacuum tube, a processing device, a heating device. You may use for an apparatus or a sterilizer.

  As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be added to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

  The order of execution of each process such as operations, procedures, steps, and stages in the apparatus, system, program, and method shown in the claims, the description, and the drawings is particularly “before” or “prior to”. It should be noted that the output can be realized in any order unless the output of the previous process is used in the subsequent process. Regarding the operation flow in the claims, the description, and the drawings, even if it is described using “first”, “next”, etc. for convenience, it means that it is essential to carry out in this order. It is not a thing.

DESCRIPTION OF SYMBOLS 10 Semiconductor wafer, 100 Electron beam irradiation apparatus, 110 Stage part, 120 Storage part, 130 Control part, 140 Communication part, 150 Computer part, 200 Electron beam generator, 202 Voltage supply part, 204 Electrode part, 210 Substrate, 212 Electron Beam generation source, 214 concave portion, 216 polysilicon layer, 215 first insulating film, 218 second insulating film, 220 circuit board, 222 electrode portion, 224 connection portion, 230 acceleration electrode, 240 electron lens, 242 coil portion, 244 lens Part, 246 convergence part, 300 electron emission part, 310 first electrode part, 312 opening part, 320 second electrode part, 322 connection part, 330 barrier part, 340 isolation part, 350 third electrode part, 352 conductive film, 402 1st block, 404 2nd block, 406 3rd block , 408 4th block, 410 5th block, 422 1st block, 424 2nd block, 510 cell, 512 circuit region, 514 non-circuit region, 520 processing region, 530 through via, 532 bonding pad, 534 conductor, 540 Insulating part, 550 Insulating layer, 560 Back side wiring part, 1000 Electron beam exposure apparatus

Claims (20)

A cell region having a circuit region provided with an electronic circuit and a non-circuit region excluding the circuit region in the cell region, and a plurality of cells having a predetermined shape;
A processing region in which the plurality of non-circuit regions are formed adjacent to each other without including the circuit region by arranging the plurality of cells;
Provided in the processing region, penetrating from the surface side of the substrate on which the plurality of cells are provided to the back side, electrically insulated, without being connected between a plurality of the circuit region in the substrate material of the substrate A circuit board comprising an insulating part. The circuit area has a predetermined shape,
The processing region is formed by connecting the non-circuit region over two or more cell regions by arranging at least a part of the plurality of cells by changing the circuit region by at least one of rotation and inversion. The circuit board according to claim 1.   The circuit board according to claim 1, wherein the circuit region has a shape in contact with one side of the cell region and a part of each of two sides sandwiching the one side.   The plurality of cells include at least three types of cells having the circuit regions of three types obtained by rotating the predetermined shape by 90 degrees with respect to one direction on the circuit board. The circuit board according to claim 2.   The circuit board according to claim 2, wherein the circuit region includes a shape that is a mirror image of the predetermined shape. The plurality of cell regions have a rectangular shape,
The circuit area touches two adjacent sides of the rectangle,
The circuit board according to claim 1, wherein the non-circuit region is in contact with the other two sides of the rectangle.   The circuit board according to claim 1, wherein the insulating portion is formed by embedding an insulator after the circuit board is etched. The plurality of cells are divided into two or more cell groups;
The circuit board according to claim 1, wherein the insulating portion electrically insulates at least one of the cell groups from other cell groups.   The circuit board according to claim 8, wherein the insulating portion electrically insulates each of the two or more cell groups from another cell group.   The circuit board according to any one of claims 1 to 9, further comprising a through via part provided in the processing region and having a through hole penetrating the front surface and the back surface of the circuit board and a conductor.   The circuit board according to claim 10, wherein the through via portion is provided with a bonding pad in the through hole on a surface of the circuit board on which the circuit region is provided. The circuit board according to any one of claims 1 to 11,
A surface electron beam source in which a plurality of electron beam generation sources are arranged;
With
An electron beam generating apparatus comprising: a driving circuit provided in the circuit region and electrically connected to a corresponding electron beam generating source among the plurality of electron beam generating sources to drive the corresponding electron beam generating source. The plurality of circuit regions of the circuit board each have an electrode portion electrically connected to the outside,
The electron beam generator according to claim 12, wherein the electronic circuit provided in the circuit region is electrically connected to the corresponding electron beam generation source via the electrode unit.   The electron beam generating apparatus according to claim 12 or 13, wherein each of the plurality of electron beam generating sources is electrically insulated from each other. Each of the plurality of cells corresponds to each of the plurality of electron beam sources;
The plurality of drive circuits in the plurality of cells supply different drive voltages to the corresponding electron beam generation sources for each of a plurality of cell groups obtained by dividing the plurality of cells by the insulating part being electrically insulated. The electron beam generator according to any one of claims 12 to 14.   16. The plurality of electron beam generation sources are arranged in a matrix and each have an electron emission portion that emits electrons in accordance with a drive voltage supplied from the drive circuit. Electron beam generator.   The electron beam generating apparatus according to claim 16, wherein the electron emission portion includes a nanocrystal. An electron beam generator according to any one of claims 12 to 17,
An electron lens that irradiates an object by reducing a drawing pattern by a plurality of electron beams output from the electron beam generator to a predetermined magnification; and
An electron beam irradiation apparatus comprising: One or more electron beam irradiation devices according to claim 18;
A stage unit for placing the object;
A storage unit for storing drawing pattern information drawn by the one or more electron beams;
A control unit that transmits a control signal that causes the electron beam irradiation device to output a plurality of electron beams according to the drawing pattern information stored in the storage unit;
An electron beam exposure apparatus comprising: A circuit board manufacturing method comprising:
A step of having a circuit region including an electronic circuit and a non-circuit region excluding the circuit region in the cell region, and arranging a plurality of cells having a predetermined shape on the substrate;
Etching into the processing region on the substrate so as to penetrate from the front side to the back side of the circuit board;
Embedding an insulating material in the etched region of the circuit board, and forming an insulating portion that electrically isolates the circuit regions without being connected by the substrate material of the circuit board ;
With
The step of arranging the plurality of cells on the substrate includes forming the processing region in which the plurality of non-circuit regions are formed adjacent to each other without including the circuit region by arranging the plurality of cells. A manufacturing method comprising the step of forming.

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