WO2013118517A1

WO2013118517A1 - Electron beam generating appartus, electron beam irradaition apparatus, multi-electron beam irradiation apparatus, electron beam exposure apparatus, electron beam irradiation method, and manufacture method

Info

Publication number: WO2013118517A1
Application number: PCT/JP2013/000722
Authority: WO
Inventors: 江刺　正喜; 池上　尚克; 明小島
Original assignee: 国立大学法人東北大学; 株式会社クレステック
Priority date: 2012-02-10
Filing date: 2013-02-08
Publication date: 2013-08-15

Abstract

An electron beam generating apparatus (200) of the present invention is provided with: a substrate (210), in which a plurality of holes (214) are provided; a plurality of electron emitting sections (300), which are respectively provided on the bottom surfaces of the holes, and which emit electrons; and a plurality of first electrode sections (310), which are provided corresponding to the electron emitting sections, respectively, accelerate the electrons emitted from the corresponding electron emitting sections, and output, as electron beams, the electrons from the holes that are respectively provided with electron emitting sections. Consequently, throughput of an electron beam exposure apparatus can be improved.

Description

Electron beam generation apparatus, electron beam irradiation apparatus, multi-electron beam irradiation apparatus, electron beam exposure apparatus, electron beam irradiation method, and manufacturing method

The present invention relates to an electron beam generating apparatus, an electron beam irradiation apparatus, a multi-electron beam irradiation apparatus, an electron beam exposure apparatus, an electron beam irradiation method, and a manufacturing method.

Conventionally, in a semiconductor integrated circuit provided with a fine pattern, an electron beam exposure apparatus is used, and the electron beam is directly drawn on a semiconductor substrate in accordance with pattern data to form the fine pattern (for example, Patent Documents 1 and 2). reference). An electron beam exposure apparatus that generates a plurality of electron beams and irradiates the sample with the plurality of electron beams is formed into an area beam by a collimator lens or the like after the electron beam generated from the electron beam generation source is formed into a mask. A plurality of beams are generated through lenses, blanking arrays, and the like (see, for example, Patent Documents 1 and 2).
Patent Document 1 Japanese Patent Application Laid-Open No. 2007-329220 Patent Document 2 Japanese Patent Application Laid-Open No. 9-245708 Non-Patent Document 1 PNMinh, LTTTuyen, T. Ono, H. Mimura, K. Yokoo and M. Esashi: Carbon nanotube on a Si tip for electron field emitter, Jpn. J. Appl. Phys., 41 Part2, 12A (2002), L1409-L1411
Non-Patent Document 2 PNMinh, LTTTuyen, T. Ono, H. Miyashita, Y. Suzuki, H. Mimura and M. Esashi: Selective growth of carbon nanotubes on Si microfabricated tips and application for electron field emitters, J. Vac. Sci. Technol. B 21, 4, (2003), 1705-1709
Non-Patent Document 3 PNMinh, T. Ono, N. Sato, H. Mimura and M. Esashi: Microelectron field emitter array with focus lenses for multielectron beam lithography based on silicon on insulator wafer, J. Vac. Sci. Technol., B22 , 3 (2004) 1273-1276
Non-Patent Document 4 JHBae, PNMinh, T. Ono and M. Esashi: Schottky emitter using boron-doped diamond, J. Vac. Sci. Technol., B22, 3 (2004) 1349-1352
Non-Patent Document 5 C.-H. Tsai, T. Ono and M. Esashi: Fabrication of diamond Schottky emitter array by using electrophoresis pre-treatment and hot-filament chemical vapor deposition, diamond and related materials, 16 (2007) 1398- 1402

However, the throughput of the electron beam exposure apparatus has decreased due to the miniaturization of the pattern to be drawn and the increase in the diameter of the semiconductor wafer. For example, the number of pixels to be drawn has increased to about 20,000 times in about 30 years, and there has been a case where one semiconductor wafer is drawn over 10 hours or more. Further, in such an electron beam exposure apparatus, the electron beam irradiation apparatus accommodates a complicated optical system and becomes large, and the exposure apparatus itself is huge. In addition, since the electron beam irradiation apparatus is larger than the sample, it is difficult to mount a plurality of electron beam irradiation apparatuses and irradiate a plurality of drawing patterns in parallel with one sample.

According to the first aspect of the present invention, a substrate provided with a plurality of hole portions, a plurality of electron emission portions that are provided on the bottom surfaces of the plurality of hole portions, emit electrons, and a plurality of electron emission portions are provided. An electron beam generator comprising: a plurality of first electrode portions that are provided in correspondence with each other and that accelerate electrons emitted from the corresponding electron emission portions and output the electrons as holes from the holes provided with the electron emission portions. An electron beam irradiation apparatus, an electron beam exposure apparatus, and a manufacturing method are provided.

According to a second aspect of the present invention, there is provided an electron beam irradiation apparatus that outputs a plurality of electron beams, having a plurality of electron emission portions, and accelerating electrons emitted from each of the plurality of electron emission portions. An electron comprising: a surface electron beam source that is focused and output as a plurality of electron beams; and an electron lens that irradiates an object with a drawing pattern by the plurality of electron beams output from the surface electron beam source at a predetermined magnification. A beam irradiation apparatus is provided.

Note that the above summary of the invention does not enumerate all the necessary features of the present invention, and sub-combinations of these feature groups can also be the invention.

A configuration example of an electron beam exposure apparatus 1000 according to the present embodiment is shown together with a semiconductor wafer 10. A configuration example of an electron beam irradiation apparatus 100 according to the present embodiment is shown together with a semiconductor wafer 10. The structural example of the electron beam generation source 212 formed in the electron beam generator 200 which concerns on this embodiment is shown. A modification of the electron beam exposure apparatus 1000 according to this embodiment is shown together with the semiconductor wafer 10. An example of the manufacturing flow which forms the electron beam generator 200 which concerns on this embodiment is shown. A cross-sectional configuration at a stage where a resist 400 is formed on a substrate 210 according to the present embodiment is shown. A cross-sectional configuration at a stage where the substrate 210 is etched from the opening of the resist 400 according to the present embodiment is shown. A cross-sectional configuration at a stage where a hole 214 is formed in the substrate 210 according to the present embodiment is shown. A cross-sectional configuration at a stage where a polysilicon layer 216 is formed on the bottom surface 402 of the hole 214 according to the present embodiment is shown. A cross-sectional configuration at the stage where the first insulating film 218 is formed on the surface of the substrate 210 on which the polysilicon layer 216 is formed is shown. A cross-sectional configuration at the stage where the resist 400 is formed on the surface of the substrate 210 according to the present embodiment on which the first insulating film 218 is formed is shown. A cross-sectional configuration at a stage where the first insulating film 218 formed on the bottom surface 402 of the hole 214 according to the present embodiment has been removed is shown. A cross-sectional configuration at a stage where the electron emission unit 300 is formed on the bottom surface 402 of the hole 214 according to the present embodiment is shown. A cross-sectional configuration at a stage where a resist 400 is formed on a substrate 210 on which an electron emission unit 300 according to the present embodiment is formed is shown. A cross-sectional configuration at a stage where a connection portion 322 is formed on one surface of the first insulating film 218 according to this embodiment on the opposite side to the substrate 210 is shown. A cross-sectional configuration at the stage where the second electrode unit 320 is formed on the surface of the substrate 210 according to the present embodiment on which the electron emission unit 300 is formed is shown. A cross-sectional configuration at a stage where the polymer layer 410 is formed on the surface on which the second electrode part 320 of the substrate 210 according to the present embodiment is formed is shown. A cross-sectional configuration at a stage where a part of the second electrode part 320 according to the present embodiment is etched and the second electrode part 320 is electrically separated is shown. A cross-sectional configuration at a stage where the second insulating film 330 is formed on the surface of the substrate 210 on which the polymer layer 410 is formed according to the present embodiment is shown. A cross-sectional configuration at a stage where the second insulating film 330 according to the present embodiment is polished and the polymer layer 410 is exposed is shown. A cross-sectional configuration at a stage where the metal film 420 is formed on the surface of the substrate 210 where the polymer layer 410 is exposed according to the present embodiment is shown. A cross-sectional configuration at the stage where the resist 400 is formed on the surface of the substrate 210 on which the metal film 420 is formed according to the present embodiment is shown. A cross-sectional configuration at a stage where the metal film 420 is further formed on the surface of the substrate 210 on which the metal film 420 is formed according to the present embodiment is shown. A cross-sectional configuration at a stage where the first electrode part 310 having the opening 312 is formed on the surface of the substrate 210 where the electron emission part 300 is formed according to the present embodiment is shown. A cross-sectional configuration at a stage where the holding substrate 440 is bonded to the surface of the substrate 210 according to the present embodiment on which the electron emission unit 300 is formed is shown. A cross-sectional configuration at a stage where a resist 400 is formed on the back surface opposite to the surface on which the first electrode portion 310 of the substrate 210 according to the present embodiment is formed is shown. A cross-sectional configuration at a stage where the substrate 210 is etched from the opening of the resist 400 formed in the substrate 210 according to the present embodiment is shown. A cross-sectional configuration at a stage where the isolation part 340 is formed on the substrate 210 according to the present embodiment is shown. A cross-sectional configuration at a stage where the third electrode portion 350 is formed on the back surface opposite to the surface on which the first electrode portion 310 of the substrate 210 according to the present embodiment is formed is shown. A cross-sectional configuration at a stage where the substrate 210 and the electronic circuit unit 220 according to the present embodiment are bonded together is shown. A cross-sectional configuration at a stage where the holding substrate 440 is removed from the substrate 210 according to the present embodiment is shown. The cross-sectional structure of the stage in which the electron beam generator 200 which concerns on this embodiment was formed is shown.

Hereinafter, the (1) aspect of the present invention will be described through embodiments of the invention. However, the following embodiments do not limit the invention according to the scope of claims, and the features described in the embodiments are as follows. Not all combinations are essential for the solution of the invention.

FIG. 1 shows a configuration example of an electron beam exposure apparatus 1000 according to this embodiment together with a semiconductor wafer 10. The electron beam exposure apparatus 1000 includes an electron beam irradiation apparatus 100 that irradiates a plurality of electron beams, and draws a fine pattern on the semiconductor wafer 10 using the electron beam irradiation apparatus 100.

Here, the semiconductor wafer 10 may be a plate-like substrate formed by processing a crystal of a semiconductor material such as silicon, silicon carbide, germanium, gallium arsenide, gallium nitride, gallium phosphide, or indium phosphide. The electron beam exposure apparatus 1000 includes an electron beam irradiation apparatus 100, a stage unit 110, a storage unit 120, a control unit 130, a communication unit 140, and a computer unit 150.

The electron beam irradiation apparatus 100 is an electron column that irradiates a plurality of electron beams. The electron beam irradiation apparatus 100 draws a predetermined drawing pattern by irradiating the surface of the semiconductor wafer 10 with a plurality of electron beams. Details of the electron beam irradiation apparatus 100 will be described later.

The stage unit 110 places an object to be irradiated with an electron beam. In the figure, an example in which the object is a semiconductor wafer 10 is shown. The stage unit 110 moves the mounted semiconductor wafer 10 in the horizontal direction, and causes the electron beam irradiation apparatus 100 to draw a predetermined fine pattern on one surface of the semiconductor wafer 10 at a predetermined position.

The stage unit 110 may have an XY stage. The stage unit 110 may have a θ stage. The stage unit 110 may further include a tilt stage that adjusts the horizontal position. The stage unit 110 may further include a Z stage that moves the semiconductor wafer 10 in the vertical direction and adjusts the distance between the semiconductor wafer 10 and the electron beam irradiation apparatus 100.

The storage unit 120 stores drawing pattern information drawn by the electron beam irradiation apparatus 100. Here, the drawing pattern information may be position information on one surface of the semiconductor wafer 10, information on whether or not to irradiate an electron beam, and the like. The storage unit 120 may store predetermined drawing pattern information in advance.

The control unit 130 is connected to the electron beam irradiation apparatus 100 and the storage unit 120, and transmits a control signal for causing the electron beam irradiation apparatus 100 to output a plurality of electron beams according to the drawing pattern information stored in the storage unit 120. To do. The control unit 130 may be connected to the stage unit 110 and may transmit a control signal for moving the stage unit 110 according to the drawing pattern information stored in the storage unit 120. In addition, the control unit 130 may transmit a control signal to the electron beam irradiation apparatus 100 and / or the stage unit 110 according to the instruction signal received via the communication unit 140.

The communication unit 140 connects the control unit 130 and the computer unit 150. The communication unit 140 may have a general-purpose or dedicated interface, and the control unit 130 and the computer unit 150 may be connected to communicate with each other. The communication unit 140 may use a general-purpose high-speed serial interface such as Ethernet (registered trademark), USB, Serial RapidIO, or a parallel interface. The communication unit 140 may connect the control unit 130 and the computer unit 150 wirelessly.

The computer unit 150 transmits an instruction signal for operating the electron beam irradiation apparatus 100 and / or the stage unit 110 to the control unit 130. The computer unit 150 may execute an operation program for operating the electron beam exposure apparatus 1000 and transmit an instruction signal according to the operation program. The computer unit 150 may have an input device for inputting a user instruction, and may transmit an instruction signal according to the user instruction. The computer unit 150 may be a personal computer or a server machine.

FIG. 2 shows a configuration example of the electron beam irradiation apparatus 100 according to the present embodiment together with the semiconductor wafer 10. FIG. 2 shows a configuration example of a vertical cross section of the electron beam irradiation apparatus 100. The electron beam irradiation apparatus 100 includes an electron beam generation apparatus 200, an acceleration electrode 230, and an electron lens 240.

The electron beam generator 200 generates a plurality of electron beams according to the control signal. The electron beam generator 200 is a planar electron beam source as an example. The electron beam generator 200 includes a substrate 210 and an electronic circuit unit 220.

The substrate 210 is provided with a plurality of holes. The plurality of holes may be formed in a matrix on one surface of the substrate 210. In the substrate 210, a plurality of electron beam generation sources 212 are formed in the hole. Details of the electron beam generation source 212 will be described later. The substrate 210 may be a semiconductor crystal such as silicon.

The electronic circuit unit 220 is formed on the other surface of the substrate 210 and outputs an electron beam from a plurality of electron beam generation sources 212. In the electronic circuit unit 220, a circuit for supplying a driving voltage for driving each of the plurality of electron beam generation sources 212 is formed. The electronic circuit unit 220 receives a control signal from the control unit 130 and outputs an electron beam from the plurality of electron beam generation sources 212 according to the drawing pattern information.

One surface of the electronic circuit unit 220 is bonded to the substrate 210. The electronic circuit unit 220 may be formed of a semiconductor substrate such as silicon. The electronic circuit unit 220 is substantially the same as the thermal expansion coefficient of the substrate 210 to such an extent that the substrate 210 or the electronic circuit unit 220 is not bent or peeled even when the temperature is increased by the driving of the electron beam generator 200. It may be formed of a material having a similar coefficient of thermal expansion.

The acceleration electrode 230 is provided on the side of the electron beam generator 200 that outputs the electron beam, and a voltage higher than that of the electrode that outputs the electron beam of the electron beam generator 200 is applied to accelerate the electron beam. The acceleration electrode 230 is formed with a plurality of through holes respectively corresponding to the plurality of electron beam generation sources 212, and allows the plurality of electron beams to pass therethrough. The acceleration electrode 230 may have a plurality of through holes arranged in a matrix. A constant voltage is applied to the acceleration electrode 230, and as an example, approximately 0V is applied.

The electron lens 240 irradiates the semiconductor wafer 10 as an object with a drawing pattern by a plurality of electron beams output from the electron beam generator 200 at a predetermined magnification. For example, the electron lens 240 reduces the drawing pattern drawn by a plurality of electron beams to 1/100 or less. The electron lens 240 has a coil part 242, a lens part 244, and a speed reducing part 246.

The coil unit 242 controls the deflection of the plurality of electron beams in the XY directions. That is, the coil unit 242 controls the beam shape of the electron beam on the surface of the semiconductor wafer 10 where the electron beam is irradiated. The coil unit 242 may be a rotation coil that corrects the correspondence between the X axis or Y axis of the electron beam irradiation apparatus 100 and the X axis or Y axis on the surface of the semiconductor wafer 10. The coil unit 242 may correct the amplitudes of the beam diameter on the surface of the semiconductor wafer 10 in the X and Y directions.

The lens unit 244 images a plurality of electron beams on the surface of the semiconductor wafer 10. The lens unit 244 may constitute a telecentric lens system and functions as an objective lens of the electron beam generator 200.

The deceleration unit 246 receives a deceleration voltage and applies a deceleration electric field corresponding to the deceleration voltage to the plurality of electron beams. The decelerating unit 246 decelerates a plurality of electron beams and irradiates the semiconductor wafer 10 as an object with an electron beam having a predetermined energy. The deceleration unit 246 sets the incident voltage to the semiconductor wafer 10 as a difference between the acceleration voltage of the acceleration electrode 230 and the deceleration voltage.

FIG. 3 shows a configuration example of the electron beam generation source 212 formed in the electron beam generation apparatus 200 according to the present embodiment. The electron beam generator 200 has a plurality of electron emission units, accelerates and focuses the electrons emitted from each of the plurality of electron emission units, and outputs the electrons as a plurality of electron beams. As described with reference to FIG. 2, the electron beam generator 200 includes the substrate 210 and the electronic circuit unit 220. Further, the electron beam generator 200 may include a voltage supply unit 202 that supplies a drive voltage to each unit.

The voltage supply unit 202 includes a plurality of electrode units 204 and supplies drive voltages to connection destinations connected to the respective electrode units 204. The plurality of electrode portions 204 may be connected to a plurality of connection destinations by wire bonding or the like. The voltage supply unit 202 is provided on the surface of the electronic circuit unit 220 opposite to the substrate 210 side.

Here, the electrode part described in this embodiment may include nickel, gold, chromium, titanium, aluminum, tungsten, palladium, rhodium, platinum, copper, ruthenium, indium, iridium, osmium, and / or molybdenum. Further, the electrode portion may be an alloy of two or more materials including these materials.

The substrate 210 has a plurality of holes 214, an isolation part 340, and a third electrode part 350. Each bottom surface of the plurality of hole portions 214 is formed in a concave shape. Moreover, each bottom surface of the plurality of hole portions 214 may be formed in a spherical shape or a parabolic shape. Each of the plurality of holes 214 is formed in a cylindrical shape, and an electron beam generation source 212 that generates an electron beam is formed. The electron beam generation source 212 includes a polysilicon layer 216, a first insulating film 218, an electron emission unit 300, a first electrode unit 310, a second electrode unit 320, and a second insulating film 330.

The polysilicon layer 216 is formed on the surface of the substrate 210 where the plurality of holes 214 are formed. A part of the polysilicon layer 216 formed at the bottom of the hole 214 is nano-crystallized by anodic activation to form the electron emission unit 300. The first insulating film 218 is formed on the surface of the substrate 210 where the polysilicon layer 216 is formed. The first insulating film 218 may be a SiN film formed by a CVD method or the like.

The electron emission unit 300 is provided on the bottom surface of each of the plurality of holes 214 and emits electrons. The plurality of electron emission units 300 are arranged in a matrix and emit electrons according to the driving voltage. Moreover, the electron emission part 300 has a nanocrystal. For example, the electron emission unit 300 is formed of nanocrystalline silicon. Nanocrystalline silicon forms a surface oxide film that functions as an electron tunneling barrier, and a plurality of nanocrystalline silicons are arranged to form a column connecting the electron tunneling barriers.

In such an array of electron tunnel barriers, a voltage is applied to the barriers, whereby electrons passing through the barriers can be controlled in a very small unit such as several units. Therefore, the electron emission part 300 can control the amount of electron emission precisely and with good reproducibility by having a nanocrystal.

Further, when the electron emission unit 300 is formed of nanowires in which a plurality of such nanocrystalline silicons are arranged, the nanowires are not formed perpendicular to the surface that outputs electrons, and the output surface depends on the crystal orientation. May be tilted with respect to the normal. In this case, the electron emission unit 300 may output electrons in a direction different from the normal direction of the output surface. In this case, the electron emission unit 300 determines the electron emission amount by multiplying the distribution of the tunnel probability in a different direction with respect to the normal of the output surface and the distribution in which the nanowire emits electrons in the direction.

The electron emission unit 300 can output more electrons as an electron beam by making the bottom surface of the hole 214 concave to have an electron emission amount when the bottom surface is flattened. For example, in the case where the bottom surface of the electron emission unit 300 is made flat by forming the direction in which the electron emission distribution is higher and / or the direction in which the tunnel probability distribution is higher in the direction in which the electron beam is output. More electrons can be output as an electron beam than the amount of emitted electrons. As an example, the shape of the bottom surface of the hole 214 is such that the direction in which the electrons are emitted from the plurality of electron emitting units 300 and the tunnel probability of the electrons in the directions are more multiplied is the center of the first electrode unit 310. Turn to.

The electron emission unit 300 may include an insulating film that tunnels emitted electrons instead of the nanocrystal. Since such an insulating film can be adjusted by the probability of tunneling the amount of electrons emitted, the amount of electrons emitted can be controlled by the material, film thickness, and voltage applied to the insulating film. it can.

The first electrode unit 310 is provided corresponding to each of the plurality of electron emission units 300, accelerates electrons emitted from the corresponding electron emission unit 300, and emits an electron beam from the hole 214 provided with the electron emission unit 300. Output as. Each of the plurality of first electrode portions 310 has an opening 312, is formed in a plate shape on one surface of the substrate 210 where the plurality of holes 214 are provided, and the openings are opened by a potential difference with the corresponding hole 214. The electron beam is focused from 312 and output. The opening 312 is formed near the center of the first electrode unit 310 and / or the electron emission unit 300. The opening 312 may be a circular through hole.

In the drawing, the first electrode part 310a is provided corresponding to the electron emission part 300a, and shows an example in which electrons emitted from the electron emission part 300a are accelerated and output as an electron beam from the opening 312a. Similarly, the 1st electrode part 310b is provided corresponding to the electron emission part 300b, and accelerates the electron which the electron emission part 300b discharge | releases.

The first electrode unit 310 may be electrically connected to an electrode or the like provided outside the substrate 210 and may have a connection unit to which a driving voltage is applied. The connection part may be an electrode part in which a conductive material is further formed on a part of the first electrode part by plating or the like. The connecting portion may be connected to an external electrode by wire bonding or the like.

The second electrode portion 320 is provided in each of the plurality of hole portions 214 and is formed of a conductive material that covers the bottom surface and the side wall of the hole portion 214. The second electrode unit 320 causes the electrons emitted from the electron emission unit 300 to be output as an electron beam from the opening 312 due to a potential difference from the first electrode unit 310. Here, the second electrode part 320 is formed thin enough to allow the electrons emitted from the electron emission part 300 to pass through the hole 214.

Here, the first electrode unit 310 and the second electrode unit 320 may be applied with a driving voltage at which the potential difference between these electrodes is several tens to several hundreds V, respectively. Preferably, the first electrode unit 310 and the second electrode unit 320 are each applied with a driving voltage having a potential difference of several hundreds of volts. As an example, the first electrode part 310 and the second electrode part 320 are each applied with a driving voltage with a potential difference of 150V. The second electrode part 320 includes a connection part 322.

The connection part 322 is an electrode part formed to be thicker in the second electrode part 320, and is electrically connected to an electrode provided outside the substrate 210, and applied with a drive voltage. The connection part 322 may be an electrode part in which a conductive material is further formed on a part of the second electrode part by plating or the like. The connection portion 322 may be connected to an external electrode by wire bonding or the like.

The second insulating film 330 is formed between the substrate 210 and the first electrode unit 310 and electrically insulates the first electrode unit 310 and the second electrode unit 320 while supporting the first electrode unit 310. . The second insulating film 330 may be a silicon oxide film formed by a CVD method or the like.

The electron beam generation source 212 described above applies electrons from the opening 312 by applying an electric field generated by a driving voltage applied to each of the first electrode unit 310 and the second electrode unit 320 to electrons emitted from the electron emission unit 300. Generate a beam. Here, in the electron beam generation source 212, each bottom surface of the hole 214 is formed in a concave shape, a spherical shape, or a parabolic shape, so that the electron emission surface of the electron emission unit 300 is also concave. , Spherical or parabolic.

Thereby, the electron beam generation source 212 can easily focus the electron emitting unit 300 on the opening 312 by aligning the direction in which the electron emitting unit 300 emits electrons with the direction of the opening 312. That is, the electron beam generation source 212 can increase the number of electrons focused on the opening 312 and increase the density of the generated electron beam.

The electron beam generation source 212 irradiates the semiconductor wafer 10 with the generated electron beam through the subsequent electron lens 240. Here, the electron lens 240 may have an aberration that causes blurring, distortion, or the like in the image formation of the electron beam, similar to an optical lens or the like. For example, the electron lens 240 may shorten the focal position of electrons traveling near the outside of the beam compared to electrons traveling near the center of the electron beam to be imaged.

Therefore, the electron beam generation source 212 may correct the aberration while increasing the electron beam density by forming the electron emitting surface of the electron emitting unit 300 into a concave shape, a spherical shape, or a parabolic shape. . Here, when the electron beam generation source 212 flattens the bottom surface of the hole 214, the electrons output from the region where the normal direction of the electron emission surface of the electron emission unit 300 is in the vicinity of the opening 312 are It is easy to focus on the center.

Therefore, the electron emission unit 300 is directed to a region near the edge side of the emission surface with a distance between the region near the center of the emission surface and the opening 312 while directing the electron emission surface toward the opening 312. A surface for shortening the distance from the opening 312 is formed. That is, by forming the emission surface so that electrons that are likely to be focused outside the electron beam reach the opening 312 more quickly, the focal length of the electrons is increased. This is equivalent to concentrating the laminar flow of electrons emitted from a portion closer to the center point of the emission surface of the electron emission unit 300 to a position closer to the center point to generate negative aberration.

Thereby, the electron beam generation source 212 can increase the focal length of electrons traveling near the outside of the electron beam as compared with electrons traveling near the center of the generated electron beam. For example, the electron beam generating source 212 increases the focal length of the electron beam as it moves away from the center of the optical axis of the electron beam, and concentrically distributes the focal length in a cross section perpendicular to the irradiation direction of the electron beam. To have. As described above, the electron beam generation source 212 can correct the aberration of the electron lens 240 by forming an emission surface corresponding to the aberration of the electron lens 240.

Here, the region in the vicinity of the edge side of the emission surface of the electron emission unit 300 is closer to the outside of the electron beam generation source 212 than the region in the vicinity of the center. That is, electrons output from the region near the edge side of the emission surface are likely to be output in a direction inclined from the normal line of the emission surface, and the focal length tends to be long. As described above, the electron beam generation source 212 forms a distribution of focal lengths in the electron beam to be output depending on the external electric field. Therefore, the shape of the emission surface of the electron emission unit 300 is adjusted according to such distribution. Then, the aberration of the electron beam imaged on the semiconductor wafer 10 may be corrected.

Here, the second electrode portion 320 forms a cylindrical electrode covering the bottom surface and the side wall of the hole portion 214, and keeps the hole portion 214 at the same potential. As a result, the influence of the external electric field can be reduced while the side wall portion of the second electrode unit 320 maintains the velocity of the electrons emitted from the electron emission unit 300 and focuses the electrons near the opening 312.

The isolation part 340 is formed by being filled with an insulating material. The isolation unit 340 is formed so as to surround each of the plurality of electron beam generation sources 212 and electrically isolates the electron beam generation sources 212 from each other. As an example, the isolation part 340 is formed by filling a groove or the like formed in a lattice shape with a polymer or the like.

The third electrode portion 350 is formed on the surface of the substrate 210 opposite to the surface on which the plurality of hole portions 214 are formed, corresponding to each of the plurality of electron emission portions 300. The third electrode unit 350 is applied with a driving voltage for emitting electrons from the plurality of electron emission units 300. The third electrode unit 350 is electrically connected to the electronic circuit unit 220.

The electronic circuit unit 220 is formed on the other surface of the substrate 210 and individually supplies a driving voltage for emitting electrons from the plurality of electron emission units 300 to each of the plurality of electron emission units 300. The electronic circuit unit 220 may be formed on a semiconductor substrate, and one surface of the semiconductor substrate may be attached to the substrate 210.

Here, the electronic circuit unit 220 includes a plurality of electrode units 222 corresponding to the third electrode unit 350 formed on the substrate 210, and the electrode unit 222 is electrically connected to the corresponding third electrode unit 350. A driving voltage is supplied to the substrate 210 through the electrode portion 222. For example, the electrode portions 222 are formed at the same pitch as the third electrode portions 350 so as to correspond to the third electrode portions 350 formed on the substrate 210 at a pitch of about 100 μm.

The electronic circuit unit 220 may include a plurality of connection units 224 that are electrically connected to external electrodes and the like and to which a drive voltage, a power supply voltage, and the like are applied. The connection portion 224 may be connected to an external electrode by wire bonding or the like.

The electronic circuit unit 220 may further apply different offset biases depending on the arrangement of the plurality of electron emission units 300. The plurality of electron emission units 300 are individually applied with a driving voltage to emit electrons, and the corresponding plurality of electron beam generation sources 212 generate a plurality of electron beams. The plurality of electron beam generation sources 212 causes the generated plurality of electron beams to be imaged by the subsequent electron lens 240 to irradiate the semiconductor wafer 10 with a drawing pattern.

Here, the optical system such as the electron lens 240 gives a slight difference in focal position between the electron beam passing near the center of the lens and the electron beam passing near the outer edge of the lens, and blurs the drawn image by a plurality of electron beams. May cause distortion and the like. For example, the electron lens 240 may shorten the focal position with respect to an electron beam passing near the outer edge of the lens as compared with an electron beam passing near the center of the lens.

Therefore, the electronic circuit unit 220 has an electron beam generation source 212 that generates an electron beam that passes through the vicinity of the outer edge of the electron lens 240 as compared with an electron beam generation source 212 that generates an electron beam that passes through the vicinity of the center of the electron lens 240. Supply a high offset voltage. Accordingly, the electronic circuit unit 220 increases the output speed of the electron beam passing through the vicinity of the outer edge of the electronic lens 240 to increase the focal length, and cancels the focal position shortened by the electronic lens 240 for correction. Can do.

Here, the plurality of electron emission units 300 may be distributed to a plurality of blocks according to their arrangement, and the electronic circuit unit 220 may apply an offset bias for each block. For example, among the plurality of electron emission units 300, the plurality of electron emission units 300 that are arranged in the vicinity of the center on one surface of the substrate 210 and emit an electron beam that passes through the vicinity of the center of the electron lens 240 are the same. Distributed to the blocks. Further, the other electron emission units 300 may be distributed to one or more blocks in a substantially concentric manner around the central block.

As described above, the plurality of electron emission units 300 are divided into one or more concentric circles in the outer edge direction of the electron lens 240 with the electron emission unit 300 that outputs an electron beam passing near the center of the electron lens 240 as a central block. The electron emission unit 300 corresponding to the annular region is distributed as another block. The electronic circuit unit 220 adjusts the focal position of the electron beam for each of the regions divided concentrically around the electron beam passing near the center of the electron lens 240 by applying a different offset bias for each block. It is possible to correct the image formation of the drawing pattern efficiently.

The electronic circuit unit 220 applies a negative voltage of several tens of kV to the first electrode unit and the second electrode unit. As an example, the electronic circuit unit 220 applies −20 kV to the second electrode unit corresponding to the electron emission unit 300 distributed in the center of the concentric circle, and −20 kV + 150 V to the corresponding first electrode unit.

In this case, the electron beam generation source 212 generates an electron beam by applying an electric field generated by a potential difference of 150 V to electrons emitted from the electron emission unit 300, and the generated electron beam is generated with a potential difference of about 20 kV from the acceleration electrode 230. Accelerate. The electronic circuit unit 220 applies −20 kV + nV to the corresponding second electrode unit and −20 kV + 150 V + nV to the corresponding first electrode unit every n blocks different from the central block toward the outer edge. As described above, the electronic circuit unit 220 may finely adjust the acceleration electric field of the electron beam for each block by changing the driving voltage by about 1 V every time the block is different.

The electron beam generating apparatus 200 according to this embodiment has a plurality of electron beam generation sources 212 and can individually drive the plurality of electron beam generation sources 212 to output a plurality of electron beams. . As a result, the electron beam irradiation apparatus 100 including the electron beam generation apparatus 200 can irradiate the object with a predetermined drawing pattern using a plurality of electron beams.

Here, the electron beam generation source 212 is formed in each of a plurality of holes 214 formed in the semiconductor substrate. Therefore, the plurality of electron beam generation sources 212 can be formed integrally with the substrate 210 by a semiconductor manufacturing process. That is, for example, the electron beam generation sources 212 are formed in an area of 1 cm × 1 cm of the substrate 210 and arranged in a matrix of 100 × 100. As described above, the electron beam generation source 212 is formed in a matrix shape with a pitch of about 100 μm, so that the object can be irradiated with a drawing pattern with a pitch of about 1 μm or less by the electron lens 240.

As described above, the electron beam generating apparatus 200 can include a plurality of electron beam generating sources 212 formed integrally with a plurality of electrode portions and formed with a small area and a high density. Therefore, the electron beam irradiation apparatus 100 can irradiate about 10,000 electron beams while reducing the size of the apparatus.

In the above embodiment, the example in which the electron beam generator 200 and the electron beam irradiation apparatus 100 are used in the electron beam exposure apparatus 1000 has been described. Instead, the electron beam generating apparatus 200 and the electron beam irradiation apparatus 100 may be provided in an apparatus using an electron beam, such as an electron microscope, an electron beam microanalyzer, a cathode ray tube, a transmission tube, an imaging tube, a vacuum tube, a processing device, a heating device. You may use for an apparatus or a sterilizer.

FIG. 4 shows a modification of the electron beam exposure apparatus 1000 according to the present embodiment together with the semiconductor wafer 10. In the electron beam exposure apparatus 1000 of this modification, the same reference numerals are given to the same operations as those of the electron beam exposure apparatus 1000 according to the present embodiment shown in FIG. The electron beam exposure apparatus 1000 includes a plurality of electron beam irradiation apparatuses 100 that irradiate a plurality of electron beams. The electron beam exposure apparatus 1000 irradiates a plurality of electron beams and applies a drawing pattern corresponding to the drawing pattern information to the semiconductor wafer 10 that is an object. draw.

The electron beam irradiation apparatus 100 includes two or more electron beam exposure apparatuses 1000. In the drawing, an electron beam irradiation apparatus 100 shows an example in which a horizontal sectional area is formed smaller than the surface area of the semiconductor wafer 10 and a plurality of electron beam exposure apparatuses 1000 are provided. The plurality of electron beam irradiation apparatuses 100 draw a predetermined drawing pattern by irradiating the surface of the semiconductor wafer 10 with a plurality of electron beams, respectively. The plurality of electron beam irradiation apparatuses 100 may execute each drawing in parallel. Details of the electron beam irradiation apparatus 100 have already been described with reference to FIG.

The stage unit 110 moves the mounted semiconductor wafer 10 in the horizontal direction, and draws a predetermined fine pattern on one surface of the semiconductor wafer 10 at a predetermined position by the plurality of electron beam irradiation apparatuses 100. The storage unit 120 stores drawing pattern information drawn by the plurality of electron beam irradiation apparatuses 100. The control unit 130 is connected to each of the plurality of electron beam irradiation apparatuses 100, and receives a control signal for causing each of the plurality of electron beam irradiation apparatuses to output a plurality of electron beams according to the drawing pattern information stored in the storage unit 120. Send.

As described above, by using the electron beam generating apparatus 200 in which the plurality of electron beam generating sources 212 are formed integrally with the substrate 210, the electron beam irradiation apparatus 100 can be downsized, and the electron beam exposure apparatus 1000 can be downsized. A plurality of electron beam irradiation apparatuses 100 can be mounted. An electron beam exposure apparatus 1000 including two or more electron beam irradiation apparatuses 100 can irradiate the semiconductor wafer 10 with two or more drawing patterns in parallel, and has a throughput according to the number of electron beam irradiation apparatuses 100 to be mounted. Can be improved.

FIG. 5 shows an example of a manufacturing flow for forming the electron beam generator 200 according to the present embodiment. 6 to 32 show cross sections of the substrate 210 in the process of forming the electron beam generator 200 according to the present embodiment. Here, in this embodiment, the substrate 210 will be described as a silicon substrate.

First, a plurality of holes 214 are formed in the substrate 210 (S400). The hole 214 is formed by photolithography. FIG. 6 shows a cross-sectional configuration at a stage where the resist 400 is formed on the substrate 210. A resist 400 is formed on the substrate 210 in accordance with the shape of the hole 214 to be formed. The resist 400 may be a photosensitive resist, and is dissolved or solidified by exposure, and the resist 400 in a predetermined region is removed by a photomask or the like.

Next, the substrate 210 is etched in the region where the resist 400 is removed. The substrate 210 may be etched by dry etching. For example, the substrate 210 is etched by reactive ion etching. FIG. 7 shows a cross-sectional configuration when the substrate 210 is etched from the opening of the resist 400 according to the present embodiment.

The etching rate of such dry etching changes according to the area of the opening of the resist. For example, the etching rate increases as the area of the opening increases. Therefore, as in the example in the drawing, the substrate 210 is etched deeper in the region where the opening area of the resist 400 is large than in the region where the opening area is small.

Next, the substrate 210 is further etched by removing the protrusions formed by etching, so that a hole 214 is formed. Here, the resist 400 is also removed from the substrate 210. FIG. 8 shows a cross-sectional configuration at a stage where the hole 214 is formed in the substrate 210 according to the present embodiment. As in the example in the figure, the hole 214 is formed with the bottom surface 402 having a concave shape.

As described above, since the etching rate of the substrate 210 is determined in accordance with the opening area of the resist 400, a plurality of openings of the resist 400 are formed concentrically from the center of the hole 214 to be formed. By decreasing the area in order from the center, the bottom surface of the hole 214 can be formed into a concave shape. The substrate 210 can be formed in a spherical shape or a parabolic shape by adjusting the opening area of the resist 400.

Next, a plurality of electron emission portions 300 that emit electrons are formed on the bottom surfaces 402 of the plurality of hole portions 214 (S410). First, in the substrate 210, a polysilicon layer 216 is formed on one surface where the hole 214 is formed by a CVD (Chemical Vapor Deposition) method or the like. FIG. 9 shows a cross-sectional configuration at the stage where the polysilicon layer 216 is formed on the bottom surface 402 of the hole 214 according to the present embodiment.

Next, a first insulating film 218 is formed on the surface of the substrate 210 on which the polysilicon layer 216 is formed. As an example, the first insulating film 218 may be a SiN film formed by a CVD method or the like. FIG. 10 shows a cross-sectional configuration at the stage where the first insulating film 218 is formed on the surface of the substrate 210 according to the present embodiment on which the polysilicon layer 216 is formed.

Next, on the substrate 210, a resist 400 that covers a region other than the hole 214 is formed on the surface on which the first insulating film 218 is formed. As an example, the resist 400 may be formed by patterning a film resist. FIG. 11 shows a cross-sectional configuration at the stage where a resist 400 is formed on the surface of the substrate 210 according to the present embodiment on which the first insulating film 218 is formed.

Next, the first insulating film 218 formed on the bottom surface 402 of the hole 214 is removed by dry etching such as reactive ion etching. After the first insulating film 218 is removed, the resist 400 is removed. FIG. 12 shows a cross-sectional configuration at a stage where the first insulating film 218 formed on the bottom surface 402 of the hole 214 according to this embodiment is removed. Through such a process, the substrate 210 covers one surface on which the plurality of holes 214 are formed with the first insulating film 218 and exposes the polysilicon layer 216 formed on the bottom surface 402 of the plurality of holes 214. Let

Next, the exposed polysilicon layer 216 is anodized in a hydrogen fluoride (HF) aqueous solution. Then, the polysilicon layer 216 is oxidized by an RTO (Rapid-Thermal-Oxidation) method, an annealing step by an HWA (High-Pressure Water vapor) method, and an SCRD (Super Critical Rinse and Dry) method. As a result, nanocrystalline silicon with few defects is formed.

As described above, the bottom surface 402 of the hole 214 is formed with the electron emission portion 300 containing nanocrystalline silicon. FIG. 13 shows a cross-sectional configuration at a stage where the electron emission portion 300 is formed on the bottom surface 402 of the hole 214 according to the present embodiment.

Next, the second electrode part 320 is formed (S420). First, a resist 400 that covers the hole 214 is formed on the substrate 210. The resist 400 may be a film resist, and an opening is formed by a patterning process at a position where the connection portion 322 is formed on one surface of the first insulating film 218 opposite to the substrate 210. FIG. 14 shows a cross-sectional configuration at a stage where a resist 400 is formed on a substrate 210 on which an electron emission unit 300 according to the present embodiment is formed.

Next, a metal to be the connection portion 322 is formed on one surface of the first insulating film 218, and the metal other than the region where the connection portion 322 is formed is removed together with the resist 400 by lift-off. Here, the metal to be formed may include chromium and gold, and may be formed in the order of chromium and gold by vapor deposition. As an example, the film thickness of gold may be about 300 nm. FIG. 15 shows a cross-sectional configuration at a stage where the connection portion 322 is formed on one surface of the first insulating film 218 according to the present embodiment on the side opposite to the substrate 210.

Next, in the substrate 210, a metal is formed on the surface on which the connection part 322 is formed, and the second electrode part 320 is formed. Here, the metal to be formed may include titanium and gold, and may be formed in the order of titanium and gold by vapor deposition. As an example, the thickness of titanium may be about 1 nm, and the thickness of gold may be about 9 nm. FIG. 16 shows a cross-sectional configuration at a stage where the second electrode part 320 is formed on the surface of the substrate 210 according to the present embodiment on which the electron emission part 300 is formed.

Next, the first electrode part 310 is formed (S430). First, the substrate 210 has the polymer layer 410 formed on the surface on which the second electrode unit 320 is formed. The polymer layer 410 may be photosensitive polyimide. In the polymer layer 410, one surface opposite to the substrate 210 is processed flat by a CMP (Chemical Mechanical Polishing) method or the like. FIG. 17 shows a cross-sectional configuration at a stage where the polymer layer 410 is formed on the surface of the substrate 210 where the second electrode part 320 is formed according to the present embodiment.

Next, the polymer layer 410 is irradiated with light and patterned to form an opening 412, and a part of the second electrode part 320 is etched away from the opening 412. Accordingly, the second electrode unit 320 is electrically separated for each electron emission unit 300. Instead, the second electrode unit 320 may be electrically separated for each of the plurality of second electrode units 320 corresponding to the block to which the same offset bias is applied. FIG. 18 illustrates a cross-sectional configuration at a stage where a part of the second electrode unit 320 according to the present embodiment is etched and the second electrode unit 320 is electrically separated.

Next, the second insulating film 330 is formed on the surface of the substrate 210 on which the polymer layer 410 is formed. As an example, the second insulating film 330 may be a silicon oxide film formed by a CVD method or the like. FIG. 19 shows a cross-sectional configuration at a stage where the second insulating film 330 is formed on the surface of the substrate 210 according to the present embodiment on which the polymer layer 410 is formed.

Next, the second insulating film 330 is polished by a CMP method or the like to expose the polymer layer 410. The thickness of the polymer layer 410 at this stage is the electrode interval between the first electrode part 310 and the second electrode part 320. FIG. 20 shows a cross-sectional configuration at a stage where the second insulating film 330 according to the present embodiment is polished and the polymer layer 410 is exposed.

Next, a metal film 420 is formed on the surface of the substrate 210 where the polymer layer 410 is exposed. The metal film 420 forms part of the first electrode unit 310. As an example, the metal film 420 contains nickel and may be formed by a sputtering method or the like. FIG. 21 shows a cross-sectional configuration of a stage where a metal film 420 is formed on the surface of the substrate 210 according to the present embodiment where the polymer layer 410 is exposed.

Next, a resist 400 is formed on the surface of the substrate 210 on which the metal film 420 is formed. The resist 400 is formed by patterning into a region where the first electrode portion 310 to be formed later is electrically separated and a region where an opening 312 for outputting an electron beam is formed.

Here, the opening 312 may be formed near the center of the hole 214 and / or the electron emission unit 300. In addition, the region that electrically isolates the first electrode unit 310 may be formed near the center of the second insulating film 330. FIG. 22 shows a cross-sectional configuration at the stage where the resist 400 is formed on the surface of the substrate 210 according to the present embodiment on which the metal film 420 is formed.

Next, a material substantially the same as that of the metal film 420 is further formed on the surface of the substrate 210 on which the metal film 420 is formed. As an example, nickel is further formed to form the metal film 420. Here, the metal film 420 may be formed to a thickness that covers the resist 400. In this stage, the metal film 420 may be formed by plating. FIG. 23 shows a cross-sectional configuration at a stage where a metal film 420 is further formed on the surface of the substrate 210 according to the present embodiment on which the metal film 420 is formed.

Next, the metal film 420 of the substrate 210 is polished by a CMP method or the like, and the resist 400 is exposed. Next, the resist is removed and the metal film 420 is etched. The etching removes the metal film 420 in the region where the resist 400 is formed. As a result, the first electrode part 310 having the opening 312 is formed on the substrate 210.

Here, the first electrode part 310 is formed by being electrically separated for each electron emission part 300. Alternatively, the first electrode unit 310 may be electrically separated for each of the plurality of first electrode units 310 corresponding to the block to which the same offset bias is applied. FIG. 24 shows a cross-sectional configuration at a stage where the first electrode part 310 having the opening 312 is formed on the surface of the substrate 210 where the electron emission part 300 is formed according to the present embodiment.

Next, the holding substrate 440 is bonded to the plurality of first electrode portions 310 side of the substrate 210 (S440). The substrate 210 is bonded to the holding substrate 440 with the adhesive layer 430 on the surface on which the first electrode portion 310 is formed. The adhesive layer 430 may be an adhesive. Here, the holding substrate 440 is bonded via the separation layer 432. The separation layer 432 is formed of a material that is melted by the separation liquid, and the holding substrate 440 is separated using the separation liquid. The separation layer 432 may be formed of germanium or the like that is melted by a separation liquid containing hydrogen peroxide.

The holding substrate 440 may be a plate-like substrate that makes it easy for an operator to handle the substrate 210 when processing the back surface of the substrate 210 opposite to the surface on which the first electrode portion 310 is formed. That is, the substrate 210 is held from the holding substrate 440 side. For example, the holding substrate 440 is formed of glass, silicon, or the like. The holding substrate 440 may have a plurality of groove portions 442. The plurality of groove portions 442 have a function of penetrating the separation liquid into the bonding surface when the holding substrate 440 is separated using a separation liquid or the like. FIG. 25 shows a cross-sectional configuration at a stage where the holding substrate 440 is bonded to the surface of the substrate 210 according to the present embodiment on which the electron emission portion 300 is formed.

Next, the isolation part 340 is formed (S450). The isolation part 340 is formed by cutting between the plurality of electron emission parts 300 from the side opposite to the plurality of first electrode parts 310 in the substrate 210 and filling with an insulator. First, a resist 400 is formed on the back surface of the substrate 210. FIG. 26 shows a cross-sectional configuration at a stage where the resist 400 is formed on the back surface opposite to the surface on which the first electrode portion 310 of the substrate 210 according to the present embodiment is formed.

Next, the substrate 210 is etched by reactive ion etching or the like from the opening of the formed resist 400. The etching may be performed using the second insulating film 330 as an etching stop layer. In addition, a groove portion 450 is formed by the etching, and the plurality of electron emission portions 300 are separated by the groove portion 450. The resist 400 is removed after performing the etching. FIG. 27 shows a cross-sectional configuration at a stage where the substrate 210 is etched from the opening of the resist 400 formed in the substrate 210 according to the present embodiment.

Next, the groove portion 450 is filled with an insulating material, and an isolation portion 340 is formed. Here, the insulator may be a polymer or the like. As an example, the isolation part 340 is formed in a lattice shape with a pitch of approximately 100 μm in the XY direction when viewed from the back side of the substrate 210, and electrically insulates the electron emission part 300. FIG. 28 shows a cross-sectional configuration at a stage where the isolation part 340 is formed on the substrate 210 according to the present embodiment.

Next, the third electrode part 350 is formed (S460). The third electrode unit 350 is formed by lift-off after forming a resist on the back surface of the substrate 210 and forming a metal film. Here, the metal to be formed may include chromium and gold, and may be formed in the order of chromium and gold by vapor deposition. As an example, the film thickness of gold may be about 300 nm. FIG. 29 shows a cross-sectional configuration at a stage where the third electrode portion 350 is formed on the back surface opposite to the surface on which the first electrode portion 310 of the substrate 210 according to the present embodiment is formed.

Next, the holding substrate 440 is removed from the substrate 210 (S470). First, the electronic circuit part 220 is bonded to the back side of the substrate 210. Here, the substrate 210 is bonded by electrically connecting the electrode part 222 of the electronic circuit part 220 and the corresponding third electrode part 350. As an example, the electrode part 222 includes aluminum, chromium, gold, and indium, and is formed by vapor-depositing chromium, gold, and indium in this order on an aluminum electrode pad.

Thereby, the third electrode portion 350 and the electrode portion 222 are physically connected, and the interface layer becomes gold-indium-gold. In this state, by heating the temperature equal to or higher than the melting point of indium for several minutes to several tens of minutes, gold and indium are alloyed, and the third electrode portion 350 and the electrode portion 222 are joined. As an example, the heating temperature is about 200 ° C. FIG. 30 shows a cross-sectional configuration at a stage where the substrate 210 and the electronic circuit unit 220 according to the present embodiment are bonded together.

Next, the separation layer 432 is melted with the separation liquid, and the holding substrate 440 is removed. Here, the adhesive layer 430 is also removed. FIG. 31 shows a cross-sectional configuration at a stage where the holding substrate 440 is removed from the substrate 210 according to the present embodiment.

Next, after the polymer layer 410 is removed, the electrodes are wired (S480). The polymer layer 410 may be removed by oxygen plasma or the like. Instead of this, acetic acid mixed with ozone may be removed. Through such a process, the electron beam generation source 212 is formed.

Next, the connection part of the first electrode part 310, the connection part 322 of the second electrode part 320, and the connection part 224 of the electronic circuit part 220 are wired to the electrode part 204 of the voltage supply part 202, respectively. The wiring may be wire bonding or the like. When wiring is performed by wire bonding, bonding pads may be further formed by plating or the like for the respective connection portions and electrode portions. The electron beam generator 200 is formed by the above manufacturing flow. FIG. 32 shows a cross-sectional configuration at a stage where the electron beam generator 200 according to the present embodiment is formed.

As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be added to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

The execution order of each process such as operations, procedures, steps, and stages in the apparatus, system, program, and method shown in the claims, the description, and the drawings is particularly “before” or “prior”. It should be noted that they can be implemented in any order unless the output of the previous process is used in the subsequent process. Regarding the operation flow in the claims, the description, and the drawings, even if it is described using “first”, “next”, etc. for the sake of convenience, it means that it is essential to carry out in this order. is not.

10 semiconductor wafer, 100 electron beam irradiation device, 110 stage unit, 120 storage unit, 130 control unit, 140 communication unit, 150 computer unit, 200 electron beam generator, 202 voltage supply unit, 204 electrode unit, 210 substrate, 212 electron Beam source, 214 hole, 216 polysilicon layer, 218 first insulating film, 220 electronic circuit, 222 electrode, 224 connection, 230 acceleration electrode, 240 electron lens, 242 coil part, 244 lens part, 246 deceleration Part, 300 electron emission part, 310 first electrode part, 312 opening part, 320 second electrode part, 322 connection part, 330 second insulating film, 340 isolation part, 350 third electrode part, 400 resist, 402 bottom surface, 410 polymer layer, 412 opening, 4 0 metallic film, 430 an adhesive layer, 432 a separation layer, 440 holding the substrate, 442 groove, 450 grooves, 1000 an electron beam exposure apparatus

Claims

A substrate provided with a plurality of holes,
A plurality of electron emitting portions that are provided on the bottom surfaces of the plurality of hole portions and emit electrons;
A plurality of first electrode portions provided corresponding to each of the plurality of electron emission portions, and accelerating electrons emitted from the corresponding electron emission portions and outputting the electrons as holes from the holes provided with the electron emission portions. When,
An electron beam generator.
The electron beam generator according to claim 1, wherein the plurality of holes are formed in a matrix on one surface of the substrate.
Each of the plurality of first electrode portions has an opening, is formed in a plate shape on one surface of the substrate where the plurality of holes are provided, and the openings are formed by a potential difference with the corresponding hole. The electron beam generating apparatus according to claim 1, wherein the electron beam is focused and output.
2. The electron beam generator according to claim 1, wherein each of the plurality of hole portions includes a second electrode portion formed of a conductive material covering the bottom surface and the side wall.
2. The electronic circuit unit according to claim 1, further comprising an electronic circuit unit that is formed on the other surface of the substrate and individually supplies a driving voltage for emitting electrons from the plurality of electron emission units to each of the plurality of electron emission units. The electron beam generator as described.
6. The electron beam generator according to claim 5, wherein the electronic circuit unit further applies different offset biases according to the arrangement of the plurality of electron emission units.
The plurality of electron emission portions are distributed to a plurality of blocks according to each arrangement,
The electron beam generating apparatus according to claim 6, wherein the electronic circuit unit applies an offset bias for each block.
6. The electron beam generator according to claim 5, wherein the electronic circuit unit is formed on a semiconductor substrate, and one surface of the semiconductor substrate is bonded to the substrate.
The electron beam generator according to claim 1, wherein the bottom surface of each of the plurality of holes is formed in a concave shape.
10. The electron beam generator according to claim 9, wherein the bottom surface of each of the plurality of hole portions is formed in a spherical shape or a parabolic shape.
The electron according to claim 9, wherein a negative aberration is generated by concentrating a laminar flow of electrons emitted from a portion closer to the center point of the concave bottom surface to a position closer to the center point. Beam generator.
The shape of the bottom surface is such that the direction in which the multiplication of the electron emission probability of the plurality of electron emission portions and the tunnel probability of the electrons in the direction becomes larger is directed to the opening of the corresponding first electrode portion. Item 10. The electron beam generator according to Item 9.
2. The electron beam generator according to claim 1, wherein the plurality of electron emission portions include nanocrystals.
2. The electron beam generator according to claim 1, wherein the plurality of electron emission portions have an insulating film for tunneling emitted electrons.
The electron beam generator according to claim 1,
An electron lens for irradiating an object by reducing a drawing pattern by a plurality of electron beams output from the electron beam generator;
An electron beam irradiation apparatus comprising:
An electron beam irradiation apparatus that outputs a plurality of electron beams,
A surface electron beam source having a plurality of electron emission portions, accelerating and focusing electrons emitted from each of the plurality of electron emission portions, and outputting the electrons as a plurality of electron beams;
An electron lens that irradiates an object with a drawing pattern by the plurality of electron beams output from the surface electron beam source at a predetermined magnification;
An electron beam irradiation apparatus comprising:
The electron beam irradiation apparatus according to claim 16, wherein the plurality of electron emission portions are arranged in a matrix and emit electrons according to a driving voltage.
The electron beam irradiation apparatus according to claim 16, wherein each of the plurality of electron emission portions includes a nanocrystal.
The electron beam irradiation apparatus according to claim 16, wherein each of the plurality of electron emission portions includes an insulating film that tunnels emitted electrons.
The electronic circuit unit according to claim 16, further comprising an electronic circuit unit connected to the surface electron beam source and individually supplying a driving voltage for emitting electrons from the plurality of electron emission units to each of the plurality of electron emission units. Electron beam irradiation device.
21. The electron beam irradiation apparatus according to claim 20, wherein the electronic circuit unit applies an offset bias corresponding to each arrangement to each of the plurality of electron emission units in addition to the driving voltage.
The plurality of electron emission portions are distributed to a plurality of blocks according to each arrangement,
The electron beam irradiation apparatus according to claim 21, wherein the electronic circuit unit applies an offset bias for each block.
21. The electron beam irradiation apparatus according to claim 20, wherein the electronic circuit unit is formed on a semiconductor substrate.
The electron beam irradiation apparatus according to claim 16, wherein the electron lens reduces the drawing pattern of the plurality of electron beams output from the surface electron beam source to a predetermined scale and irradiates the object.
The surface electron beam source is provided on one surface of the surface electron beam source so as to correspond to each of the plurality of electron emission portions, and each of the electrons emitted from the corresponding electron emission portions is focused, The electron beam irradiation apparatus according to claim 16, further comprising a plurality of electrode portions that are output as electron beams.
26. The electron beam irradiation apparatus according to claim 25, wherein the surface electron beam source and the plurality of electrode portions are integrally formed.
A multi-electron beam irradiation apparatus comprising a plurality of electron beam irradiation apparatuses according to claim 16.
One or more electron beam irradiation devices according to claim 15;
A stage unit for placing the object;
A storage unit for storing drawing pattern information drawn by the plurality of electron beams;
A control unit that transmits a control signal that causes the electron beam irradiation device to output a plurality of electron beams according to the drawing pattern information stored in the storage unit;
An electron beam exposure apparatus comprising:
One or more electron beam irradiation devices according to claim 16;
A storage unit for storing drawing pattern information drawn by the one or more electron beams;
A control unit that transmits a control signal that causes the electron beam irradiation device to output a plurality of electron beams according to the drawing pattern information stored in the storage unit;
A stage unit for placing the object;
With
An electron beam exposure apparatus that irradiates the plurality of electron beams and draws a drawing pattern corresponding to the drawing pattern information on the object.
A surface electron beam output stage for accelerating and focusing electrons emitted from each of a plurality of electron emission portions provided on the substrate and outputting the electrons as a plurality of electron beams;
An electron beam irradiation step of irradiating an object with a drawing pattern by the plurality of electron beams at a predetermined magnification;
An electron beam irradiation method comprising:
A method for manufacturing an electron beam generator, comprising:
A hole forming step for forming a plurality of holes in the substrate;
An electron emission portion forming step of forming a plurality of electron emission portions for emitting electrons on the bottom surface of each of the plurality of hole portions;
Corresponding to each of the plurality of electron emission portions, a plurality of first electrode portions for accelerating electrons emitted from the corresponding electron emission portions and outputting them as electron beams from the hole portions provided with the electron emission portions are provided. Forming a first electrode portion to be formed;
A manufacturing method comprising:
Bonding step of bonding a holding substrate to the plurality of first electrodes on the substrate;
Holding the substrate from the holding substrate side;
An isolation step of filling an insulator by cutting between the plurality of electron emission portions from the opposite side of the plurality of first electrodes on the substrate;
Removing the holding substrate from the substrate; and
The manufacturing method according to claim 31, further comprising: