JP3561549B2 - Organic electroluminescence device - Google Patents

Organic electroluminescence device Download PDF

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JP3561549B2
JP3561549B2 JP10797395A JP10797395A JP3561549B2 JP 3561549 B2 JP3561549 B2 JP 3561549B2 JP 10797395 A JP10797395 A JP 10797395A JP 10797395 A JP10797395 A JP 10797395A JP 3561549 B2 JP3561549 B2 JP 3561549B2
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organic
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injection electrode
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JPH08288069A (en
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孝則 藤井
健志 佐野
祐次 浜田
孝介 竹内
賢一 柴田
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Sanyo Electric Co Ltd
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Description

【０００１】
【産業上の利用分野】
この発明は、ホール注入電極と電子注入電極との間に少なくとも発光層を含む有機層が形成されてなる有機エレクトロルミネッセンス素子に係り、特に、長期にわたって安定した発光が行なえる有機エレクトロルミネッセンス素子に関するものである。
【０００２】
【従来の技術】
近年、情報機器の多様化等にともなって、従来より一般に使用されているＣＲＴに比べて消費電力や空間占有面積が少ない平面表示素子のニーズが高まり、このような平面表示素子の一つとしてエレクトロルミネッセンス素子（以下、ＥＬ素子と略す。）が注目されている。
【０００３】
そして、このＥＬ素子は使用する材料によって無機ＥＬ素子と有機ＥＬ素子に大別され、無機ＥＬ素子においては、一般に発光部に高電界を作用させ、電子をこの高電界中で加速して発光中心に衝突させ、これにより発光中心を励起させて発光させるようになっている一方、有機ＥＬ素子においては、電子注入電極とホール注入電極とからそれぞれ電子とホールとを発光部内に注入させ、このように注入された電子とホールとを発光中心で再結合させて、有機分子を励起状態にさせ、このように励起状態にある有機分子が基底状態に戻るときに蛍光を発光するようになっている。
【０００４】
ここで、無機ＥＬ素子においては、上記のように高電界を作用させるため、その駆動電圧として１００〜２００Ｖと高い電圧を必要とするのに対して、上記の有機ＥＬ素子においては、５〜２０Ｖ程度の低い電圧で駆動できるという利点があった。また、このような有機ＥＬ素子においては、発光材料である螢光物質を選択することによって適当な色彩に発光する発光素子を得ることができ、フルカラーの表示装置等としても利用できるという期待があり、近年、このような有機ＥＬ素子について様々な研究が行なわれるようになった。
【０００５】
そして、上記の有機ＥＬ素子における素子構造としては、ホール注入電極と電子注入電極との間にホール輸送層と発光層と電子輸送層とを積層させたＤＨ構造と称される三層構造のものや、ホール注入電極と電子注入電極との間にホール輸送層と電子輸送性に富む発光層とが積層されたＳＨ−Ａ構造と称される二層構造のものや、ホール注入電極と電子注入電極との間にホール輸送性に富む発光層と電子輸送層とが積層されたＳＨ−Ｂ構造と称される二層構造のものが知られていた。
【０００６】
ここで、このような有機ＥＬ素子は、上記のように無機ＥＬ素子に比べて低電圧で駆動でき、多色化が容易であるという利点を有しているが、連続発光させた場合に、その発光時による熱によって発光層等の有機層が劣化してピンホールが発生し、これによりリーク電流が流れて、電圧と共にその輝度が低下し、最後にはショートして発光しなくなるという問題があり、無機ＥＬ素子に比べて寿命が短く、長期にわたって安定した発光が行なえないという欠点があった。
【０００７】
【発明が解決しようとする課題】
この発明は、有機ＥＬ素子における上記のような問題を解決することを課題とするものであり、ホール注入電極と電子注入電極との間に少なくとも発光層を含む有機層が形成された有機ＥＬ素子において、連続発光させた場合にも輝度が低下するということが少なく、長期にわたって安定した発光が行なえる有機ＥＬ素子を提供することを目的とするものである。
【０００８】
【課題を解決するための手段】
この発明の有機ＥＬ素子においては、上記のような課題を解決するため、ホール注入電極と電子注入電極との間に少なくとも発光層を含む有機層が形成されてなる有機エレクトロルミネッセンス素子において、電子注入電極と有機層との間に、ＡｌＦ3，ＢａＦ2 ，ＦｅＦ3 ，ＬｉＦ，ＭｇＦ2 から選択される少なくとも１種のフッ化物で構成され上記の有機層でのリーク電流を抑制する絶縁性薄膜層を設けるようにしたのである。
【００１０】
ここで、この発明における上記の各有機ＥＬ素子においては、そのホール注入電極に金やＩＴＯ（インジウム−スズ酸化物）等の仕事関数の大きな材料を用いるようにする一方、電子注入電極にはマグネシウム等の仕事関数の小さな材料を用いるようにし、ＥＬ光を有効に取り出すために、少なくとも一方の電極を透明にする必要があり、一般にはホール注入電極に透明で仕事関数の大きいＩＴＯを用いるようにする。
【００１１】
また、この発明の有機ＥＬ素子の素子構造は、ホール注入電極と電子注入電極との間に少なくとも発光層を含む有機層が形成されていればよく、前記のＤＨ構造，ＳＨ−Ａ構造，ＳＨ−Ｂ構造の何れの構造のものであっても良く、さらに、上記のようにホール注入電極と電子注入電極との間に少なくとも発光層とこの発光層に電子を導く電子輸送層とを含む有機層が形成された前記のＤＨ構造，ＳＨ−Ｂ構造の何れの構造のものであっても良い。
【００１２】
また、上記のような各材料を用いた絶縁性薄膜層を電極と発光層との間に設けるにあたっては、この有機ＥＬ素子における駆動電圧の上昇を少なくするために、この絶縁性薄膜層の膜厚を薄く均一に形成することが好ましく、上記の各材料からなる絶縁性薄膜層を設ける場合には、例えば、スパッタ法等の高エネルギー法を用い、膜形成時に基板を加熱させることが好ましい。なお、スパッタ法等の高エネルギー法で絶縁性薄膜層を発光層等が有機層の上に形成すると、これにより有機層が劣化してしまうため、このような方法で絶縁性薄膜層を設ける場合には、絶縁性薄膜層を電極上に形成した後、この絶縁性薄膜層の上に発光層等の有機層を設けるようにすることが好ましい。
【００１５】
【作用】
この発明における有機ＥＬ素子においては、上記のような各材料を用いた絶縁性薄膜層を電子注入電極と発光層を含む有機層との間に設けるようにしたため、連続発光させた場合に、その発光時による熱によって発光層等の有機層が劣化してピンホールが発生しても、この絶縁性薄膜層によってリーク電流の発生が抑制されるようになる。
【００１７】
【実施例】
以下、この発明の実施例に係る有機ＥＬ素子を添付図面に基づいて具体的に説明すると共に、比較例を挙げ、この実施例の有機ＥＬ素子が耐久性等の点で優れていることを明らかにする。
【００１８】
（実施例１）
この実施例の有機ＥＬ素子は、図１に示すように、ガラス基板１上に、透明なＩＴＯで構成された膜厚が２０００Åのホール注入電極２と、ＡｌＮで構成された膜厚が５０Åの絶縁性薄膜層３と、下記の化１に示すＮ，Ｎ’−ジフェニル−Ｎ，Ｎ’−ビス（３−メチルフェニル）−１，１’−ビフェニル−４，４’−ジアミン（以下、ＭＴＰＤと略す。）に下記の化２に示すルブレンが５重量％ドープされた膜厚が５００Åのホール輸送性の発光層４と、下記の化３に示すトリス（８−キノリノール）アルミニウムで構成された膜厚が５００Åの電子輸送層５と、マグネシウム・インジウム合金で構成された膜厚が２０００Åの電子注入電極６とが順々に積層されたＳＨ−Ｂ構造になっている。
【００１９】
【化１】

Figure 0003561549
【００２０】
【化２】
Figure 0003561549
【００２１】
【化３】
Figure 0003561549
【００２２】
また、この実施例の有機ＥＬ素子においては、上記のホール注入電極２と電子注入電極６とにそれぞれリード線１０を接続させて電圧を印加させるようにしている。
【００２３】
次に、この実施例の有機ＥＬ素子を製造する方法を具体的に説明する。
【００２４】
まず、ガラス基板１上に上記のホール注入電極２が形成されたものを中性洗剤により洗浄した後、これをアセトン中で２０分間、エタノール中で２０分間それぞれ超音波洗浄を行なった。
【００２５】
そして、上記の基板をＲＦマグネトロンスパッタ装置にセットし、上記のホール注入電極２上にＡｌＮからなる絶縁性薄膜層３を形成した。なお、この絶縁性薄膜層３を形成するにあたっては、純度９９．９９９％のＡｌをターゲットに使用し、Ｎ２ ：Ａｌ＝１：１の雰囲気条件で、反応圧力を４×１０−３Ｔｏｒｒ、基板温度を２００℃、電力を４００Ｗにし、成膜速度１６．７Å／分で３分間成膜を行なった。
【００２６】
次に、上記の基板を真空蒸着装置にセットし、ルブレンがＭＴＰＤに対して５重量％の濃度になるようにして、これらを真空中で上記の絶縁性薄膜層３上に共蒸着させて発光層４を形成した後、この発光層４上にトリス（８−キノリノール）アルミニウムを真空蒸着させて電子輸送層５を形成し、最後に、この電子輸送層５上にマグネシウム・インジウム合金からなる電子注入電極６を真空蒸着により形成した。なお、これらの真空蒸着は、真空度１×１０−５Ｔｏｒｒ、基板温度２０℃、各層の蒸着速度２Å／秒の条件で行なった。
【００２７】
（実施例２及び参考例１）
実施例２及び参考例１においては、上記実施例１の有機ＥＬ素子における絶縁性薄膜層３だけを変更させるようにした。
【００２８】
そして、絶縁性薄膜層３を設けるにあたり、実施例２においては、実施例１と同様にＲＦマグネトロンスパッタ装置を用い、純度９９．９９％のＴａをターゲットに使用して、ホール注入電極２上にＴａＮで構成された膜厚が５０Åの絶縁性薄膜層３を設けるようにした。また、参考例１においては、前記のホール注入電極２上に真空蒸着によってＳｉＯで構成された膜厚が５０Åの絶縁性薄膜層３を設けるようにした。なお、このＳｉＯの絶縁性薄膜層３を形成するにあたっては、ホール注入電極２が形成されたガラス基板１を真空蒸着装置にセットし、純度９９．９％のＳｉＯ粉末をモリブデンボートに入れ抵抗加熱法により、真空度１×１０−５Ｔｏｒｒ、基板温度２０℃、蒸着速度１６．７Å／分の条件で３分間成膜を行なった。
【００２９】
（比較例１）
この比較例の有機ＥＬ素子においては、図２に示すように、実施例１の有機ＥＬ素子における絶縁性薄膜層３を設けないようにし、それ以外については、実施例１の場合と同様にして、ガラス基板１上にホール注入電極２と、ホール輸送性の発光層４と、電子輸送層５と、電子注入電極６とを順々に積層された構造になっている。
【００３０】
次に、上記実施例１，２、参考例１及び比較例１の各有機ＥＬ素子をそれぞれ乾燥空気中で１０ｍＡ／ｃｍ２ の定電流により連続発光させ、各有機ＥＬ素子の発光開始時及び１０００時間発光後における輝度を測定すると共に、発光開始時に対する１０００時間発光後における輝度の割合を求め、これらの結果を下記の表１に示した。
【００３１】
【表１】
Figure 0003561549
【００３２】
また、上記比較例１の有機ＥＬ素子においては、９２時間発光後においてその輝度が半減していた。
【００３３】
上記の結果から明らかなように、上記実施例１，２及び参考例１に示すようにホール注入電極２と発光層３との間に絶縁性薄膜層３を設けた有機ＥＬ素子は、絶縁性薄膜層３を設けていない比較例１の有機ＥＬ素子に比べて長期にわたって安定した発光が行なえ、またＡｌＮやＴａＮの窒化物からなる絶縁性薄膜層３を設けた実施例１，２の有機ＥＬ素子は、ＳｉＯからなる絶縁性薄膜層３を設けた参考例１の有機ＥＬ素子より長期にわたって安定した発光が行なえるようになっていた。
【００３４】
なお、上記の各実施例においては、ＳＨ−Ｂ構造になった有機ＥＬ素子の例を示しただけであるが、ＳＨ−Ａ構造やＤＨ構造になった有機ＥＬ素子においても同様の結果が得られる。
【００３５】
また、上記の各実施例においては、ガラス基板１上に形成されたホール注入電極２上に絶縁性薄膜層３を形成し、この絶縁性薄膜層３の上に発光層４を設けるようにしたが、絶縁性薄膜層３を電子注入電極６側に設けることも可能であり、図示していないが、基板上に形成された電子注入電極の上に絶縁性薄膜層を形成し、この絶縁性薄膜層の上に発光層等の有機層を設けるようにしてもよい。
【００３６】
【発明の効果】
以上詳述したように、この発明における有機ＥＬ素子においては、ＡｌＦ3 ，ＢａＦ2 ，ＦｅＦ3 ，ＬｉＦ，ＭｇＦ2 から選択される少なくとも１種のフッ化物からなる絶縁性薄膜層を電子注入電極と発光層等の有機層との間に設けるようにしたため、連続発光させた場合に、その発光時による熱によって発光層等の有機層が劣化してピンホールが発生しても、この絶縁性薄膜層によってリーク電流の発生が抑制され、連続発光させた場合にも輝度が低下するということが少なく、長期にわたって安定した発光が行なえるようになった。
【図面の簡単な説明】
【図１】この発明の実施例１，２及び参考例１における有機ＥＬ素子の状態を示した概略図である。
【図２】比較例１における有機ＥＬ素子の状態を示した概略図である。
【符号の説明】
１ ガラス基板
２ ホール注入電極
３ 絶縁性薄膜層
４ 発光層
５ 電子輸送層
６ 電子注入電極[0001]
[Industrial applications]
The present invention relates to an organic electroluminescence device in which an organic layer including at least a light emitting layer is formed between a hole injection electrode and an electron injection electrode, and more particularly to an organic electroluminescence device capable of performing stable light emission for a long time. It is.
[0002]
[Prior art]
In recent years, with the diversification of information devices, the need for flat display elements that consume less power and space occupy less than CRTs that are generally used conventionally has increased. A luminescence element (hereinafter, abbreviated as an EL element) has attracted attention.
[0003]
The EL element is roughly classified into an inorganic EL element and an organic EL element according to a material to be used. In the inorganic EL element, a high electric field is generally applied to a light emitting portion, and electrons are accelerated in the high electric field to emit light. In the organic EL device, electrons and holes are respectively injected from the electron injection electrode and the hole injection electrode into the light emitting portion. The electrons and holes injected into the substrate are recombined at the emission center to bring the organic molecules into an excited state, and thus emit fluorescence when the organic molecules in the excited state return to the ground state. .
[0004]
Here, in order to apply a high electric field as described above, the inorganic EL element requires a high driving voltage of 100 to 200 V, whereas in the organic EL element, 5 to 20 V There is an advantage that it can be driven at a low voltage. Further, in such an organic EL element, a light emitting element which emits light of an appropriate color can be obtained by selecting a fluorescent substance which is a light emitting material, and it is expected that the organic EL element can be used as a full-color display device or the like. In recent years, various studies have been conducted on such organic EL devices.
[0005]
The organic EL device has a three-layer structure called a DH structure in which a hole transport layer, a light emitting layer, and an electron transport layer are stacked between a hole injection electrode and an electron injection electrode. A two-layer structure called an SH-A structure in which a hole transport layer and a light-emitting layer having a high electron transport property are stacked between a hole injection electrode and an electron injection electrode; There has been known a two-layer structure called an SH-B structure in which a light emitting layer having a high hole transporting property and an electron transporting layer are stacked between electrodes.
[0006]
Here, such an organic EL element has the advantages that it can be driven at a lower voltage and that multicoloring is easy as compared with the inorganic EL element as described above. The heat generated by the light emission deteriorates the organic layer such as the light emitting layer and causes pinholes. This causes a leak current to flow, and the brightness decreases with the voltage. There is a drawback that the lifetime is shorter than that of the inorganic EL element, and stable light emission cannot be performed for a long time.
[0007]
[Problems to be solved by the invention]
An object of the present invention is to solve the above-described problems in an organic EL device, and an organic EL device in which an organic layer including at least a light emitting layer is formed between a hole injection electrode and an electron injection electrode. It is an object of the present invention to provide an organic EL element which does not cause a decrease in luminance even when light is continuously emitted and can emit light stably for a long period of time.
[0008]
[Means for Solving the Problems]
In the organic EL device of the present invention is to solve the above problems, an organic electroluminescent device wherein an organic layer is formed containing at least a light emitting layer between the hole injection electrode and an electron injection electrode, an electron injection An insulating thin film layer between the electrode and the organic layer, which is made of at least one fluoride selected from AlF 3 , BaF 2 , FeF 3 , LiF, and MgF 2 and suppresses a leak current in the organic layer Is provided.
[0010]
Here, in each of the organic EL devices according to the present invention, a material having a large work function such as gold or ITO (indium-tin oxide) is used for the hole injection electrode, while magnesium is used for the electron injection electrode. In order to effectively extract EL light, it is necessary to use at least one electrode which is transparent. In general, a transparent and large work function ITO is used for the hole injection electrode. I do.
[0011]
Further, the element structure of the organic EL element of the present invention may be such that an organic layer including at least a light emitting layer is formed between a hole injection electrode and an electron injection electrode, and the DH structure, SH-A structure, SH -B structure, and further includes, as described above, at least a light emitting layer between the hole injection electrode and the electron injection electrode and an electron transporting layer for guiding electrons to the light emitting layer. Any of the above-mentioned DH structure and SH-B structure in which a layer is formed may be used.
[0012]
Further, when providing an insulating thin film layer using each of the above materials between the electrode and the light emitting layer, in order to reduce a rise in driving voltage in the organic EL device, the film of the insulating thin film layer is formed. It is preferable that the substrate is formed to be thin and uniform. In the case where an insulating thin film layer made of each of the above materials is provided, it is preferable to heat the substrate at the time of film formation by using a high energy method such as a sputtering method. In addition, when the insulating thin film layer is formed on the organic layer by the high energy method such as the sputtering method, the organic layer is deteriorated by this. Therefore, when the insulating thin film layer is provided by such a method. Preferably, after forming the insulating thin film layer on the electrode, an organic layer such as a light emitting layer is provided on the insulating thin film layer.
[0015]
[Action]
In the organic EL device according to the present invention, the insulating thin film layer using each of the above materials is provided between the electron injection electrode and the organic layer including the light emitting layer. Even if an organic layer such as a light emitting layer is deteriorated due to heat generated during light emission and a pinhole is generated, the occurrence of a leak current is suppressed by the insulating thin film layer.
[0017]
【Example】
Hereinafter, an organic EL device according to an example of the present invention will be specifically described with reference to the accompanying drawings, and a comparative example will be given to clearly show that the organic EL device of this example is excellent in durability and the like. To
[0018]
(Example 1)
As shown in FIG. 1, the organic EL element of this embodiment has, on a glass substrate 1, a hole injection electrode 2 made of transparent ITO and having a thickness of 2000 °, and a hole injection electrode 2 made of AlN and having a thickness of 50 °. An insulating thin film layer 3 and N, N′-diphenyl-N, N′-bis (3-methylphenyl) -1,1′-biphenyl-4,4′-diamine (hereinafter referred to as MTPD) A hole transporting light-emitting layer 4 having a thickness of 500 ° and doped with 5% by weight of rubrene shown in Chemical Formula 2 below, and tris (8-quinolinol) aluminum shown in Chemical Formula 3 below. It has an SH-B structure in which an electron transport layer 5 having a thickness of 500 ° and an electron injection electrode 6 having a thickness of 2000 ° made of a magnesium-indium alloy are sequentially laminated.
[0019]
Embedded image
Figure 0003561549
[0020]
Embedded image
Figure 0003561549
[0021]
Embedded image
Figure 0003561549
[0022]
Further, in the organic EL device of this embodiment, a voltage is applied by connecting the lead wires 10 to the hole injection electrode 2 and the electron injection electrode 6, respectively.
[0023]
Next, a method for manufacturing the organic EL device of this embodiment will be specifically described.
[0024]
First, after the above-described hole injection electrode 2 was formed on the glass substrate 1, the substrate was washed with a neutral detergent, and then subjected to ultrasonic cleaning in acetone for 20 minutes and in ethanol for 20 minutes.
[0025]
Then, the substrate was set in an RF magnetron sputtering apparatus, and an insulating thin film layer 3 made of AlN was formed on the hole injection electrode 2. In forming the insulating thin film layer 3, Al having a purity of 99.999% was used as a target, and the reaction pressure was set to 4 × 10 −3 Torr under an atmosphere condition of N 2 : Al = 1: 1. The film was formed at a substrate temperature of 200 ° C. and an electric power of 400 W at a film forming rate of 16.7 ° / min for 3 minutes.
[0026]
Next, the above-mentioned substrate was set in a vacuum evaporation apparatus, and rubrene was co-evaporated on the above-mentioned insulating thin film layer 3 in a vacuum so that the concentration of rubrene was 5% by weight with respect to the MTPD. After the layer 4 is formed, tris (8-quinolinol) aluminum is vacuum-deposited on the light-emitting layer 4 to form an electron transport layer 5. Finally, an electron composed of a magnesium-indium alloy is formed on the electron transport layer 5. The injection electrode 6 was formed by vacuum evaporation. These vacuum depositions were performed under the conditions of a degree of vacuum of 1 × 10 −5 Torr, a substrate temperature of 20 ° C., and a deposition rate of each layer of 2 ° / sec.
[0027]
(Example 2 and Reference Example 1)
In Example 2 and Reference Example 1, only the insulating thin film layer 3 in the organic EL device of Example 1 was changed.
[0028]
When the insulating thin film layer 3 is provided, in the second embodiment, an RF magnetron sputtering apparatus is used in the same manner as in the first embodiment, and Ta having a purity of 99.99% is used as a target to form the insulating thin film layer 3 on the hole injection electrode 2. The insulating thin film layer 3 made of TaN and having a thickness of 50 ° was provided. In Reference Example 1, an insulating thin film layer 3 made of SiO and having a thickness of 50 ° was formed on the hole injection electrode 2 by vacuum evaporation. In forming the insulating thin film layer 3 of SiO, the glass substrate 1 on which the hole injection electrode 2 was formed was set in a vacuum deposition apparatus, and SiO powder having a purity of 99.9% was placed in a molybdenum boat and subjected to resistance heating. The film was formed by the method under the conditions of a degree of vacuum of 1 × 10 −5 Torr, a substrate temperature of 20 ° C., and a deposition rate of 16.7 ° / min for 3 minutes.
[0029]
(Comparative Example 1)
In the organic EL device of this comparative example, as shown in FIG. 2, the insulating thin film layer 3 in the organic EL device of Example 1 was not provided, and otherwise the same as in Example 1. A hole injection electrode 2, a hole transporting light emitting layer 4, an electron transport layer 5, and an electron injection electrode 6 are sequentially stacked on a glass substrate 1.
[0030]
Next, each of the organic EL elements of Examples 1 and 2, Reference Example 1 and Comparative Example 1 was continuously lit with a constant current of 10 mA / cm 2 in dry air. The luminance after the light emission for the time was measured, and the ratio of the luminance after the light emission for 1,000 hours to the start of the light emission was obtained. The results are shown in Table 1 below.
[0031]
[Table 1]
Figure 0003561549
[0032]
In the organic EL device of Comparative Example 1, the luminance was reduced by half after light emission for 92 hours.
[0033]
As is clear from the above results, the organic EL device in which the insulating thin film layer 3 is provided between the hole injection electrode 2 and the light emitting layer 3 as shown in Examples 1 and 2 and Reference Example 1 has an insulating property. Compared to the organic EL device of Comparative Example 1 in which the thin film layer 3 is not provided, stable light emission can be performed for a long time, and the organic EL devices of Examples 1 and 2 in which the insulating thin film layer 3 made of AlN or TaN nitride is provided. The device was able to emit light more stably for a longer period than the organic EL device of Reference Example 1 provided with the insulating thin film layer 3 made of SiO.
[0034]
In each of the above embodiments, only the example of the organic EL element having the SH-B structure is shown. However, similar results can be obtained with the organic EL element having the SH-A structure or the DH structure. Can be
[0035]
In each of the above embodiments, the insulating thin film layer 3 is formed on the hole injection electrode 2 formed on the glass substrate 1, and the light emitting layer 4 is provided on the insulating thin film layer 3. However, it is also possible to provide the insulating thin film layer 3 on the electron injection electrode 6 side. Although not shown, an insulating thin film layer is formed on the electron injection electrode formed on the substrate. An organic layer such as a light emitting layer may be provided on the thin film layer.
[0036]
【The invention's effect】
As described in detail above, in the organic EL device according to the present invention, an insulating thin film layer made of at least one fluoride selected from AlF 3 , BaF 2 , FeF 3 , LiF, and MgF 2 is used as an electron injection electrode . This insulating thin film is provided between an organic layer such as a light emitting layer and the like. The generation of leakage current is suppressed by the layer, and the luminance is hardly reduced even when continuous light emission is performed, so that stable light emission can be performed over a long period of time.
[Brief description of the drawings]
FIG. 1 is a schematic view showing a state of an organic EL element in Examples 1 and 2 and Reference Example 1 of the present invention.
FIG. 2 is a schematic diagram showing a state of an organic EL element in Comparative Example 1.
[Explanation of symbols]
REFERENCE SIGNS LIST 1 glass substrate 2 hole injection electrode 3 insulating thin film layer 4 light emitting layer 5 electron transport layer 6 electron injection electrode

Claims (1)

ホール注入電極と電子注入電極との間に少なくとも発光層を含む有機層が形成されてなる有機エレクトロルミネッセンス素子において、電子注入電極と有機層との間に、ＡｌＦ3，ＢａＦ2，ＦｅＦ3，ＬｉＦ，ＭｇＦ2から選択される少なくとも１種のフッ化物で構成され上記の有機層でのリーク電流を抑制する絶縁性薄膜層を設けたことを特徴とする有機エレクトロルミネッセンス素子。In an organic electroluminescence device in which an organic layer including at least a light emitting layer is formed between a hole injection electrode and an electron injection electrode, AlF 3 , BaF 2 , FeF 3 , and LiF 3 are provided between the electron injection electrode and the organic layer. An organic electroluminescent element comprising an insulating thin film layer made of at least one fluoride selected from the group consisting of MgF 2 and Mg and suppressing the leakage current in the organic layer.
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