JP3506896B2 - Near magnetic field probe, near magnetic field probe unit, near magnetic field probe array, and magnetic field measurement system - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to various types of electric equipment such as electrophotographic copying machines, facsimile machines, printing machines, office equipment such as personal computers, household electric equipment, industrial equipment and the like.
Detects electromagnetic noise from electronic devices, and also detects noise from printed wiring boards etc. that are built into various devices.
The present invention relates to an inspection device for EMC regulation measures and electromagnetic interference measures used for the countermeasures, and particularly to detect a current by performing a proximity magnetic field detection necessary when a current to be a noise source is specified in proximity to an object to be measured. The so-called "near magnetic field probe",
And a “near magnetic field probe unit” and a “near magnetic field probe array” including the near magnetic field probe, and a “magnetic field measurement system” including the near magnetic field probe, the near magnetic field probe unit, and the near magnetic field probe array in a magnetic field measuring unit It is a thing.

[0002]

2. Description of the Related Art Conventionally, as an EMC measure, 10 m or 30 m at an open site or an anechoic chamber, which is legally regulated.
There is a method of taking countermeasures from the result of measuring the electromagnetic wave in a distant place such as using an established antenna. In addition to this, there is a method of detecting an electromagnetic field from a target with a probe brought close to such a site before measurement at such an authentication site and taking measures against the target by using this. The related art will be shown below.

Japanese Patent Laid-Open No. 6-58969 discloses a three-dimensional XYZ table for three-dimensionally detecting a magnetic field of unnecessary radiation generated from a printed wiring board (PCB) on which electronic components are mounted. Set the printed wiring board to
Measure the intensity distribution of the magnetic field of unwanted radiation from above the printed wiring board with a near-field probe, which is a sensor, store the data in memory in the measuring instrument, and then invert the printed wiring board to perform the same measurement. There is disclosed an electromagnetic interference measuring device capable of measuring the intensity distribution of the magnetic fields of unwanted radiation on the front and back sides by performing the operation and recalling the contents of the memory. Further, Japanese Patent Application Laid-Open No. 6-58970 discloses a double-sided electromagnetic interference measuring device that uses an array-shaped sensor table and a sensor moving means in combination and eliminates the need to turn over.

Further, Japanese Laid-Open Patent Publication No. 62-106379 discloses a magnetic field measuring probe having a structure in which a symmetrical loop coil and a circuit inside a shield box following the coil coil detect a signal generated only by a magnetic field. .

[0005]

However, in JP-A-6-58969 and JP-A-6-58970, there is no particular description about the positioning of the near magnetic field probe, which is a sensor, and a simple geometrical position is used. It is only a match. Therefore, a more accurate positioning method with a simple structure is required. JP-A-62-106379
In the publication, the magnetic field measuring probe is used by hand, but the coil is formed on a printed wiring board, and it is difficult to form a minute coil dimension of about 1 mm square or less, which is relatively large. The purpose is to detect parts. In addition, there is no description regarding positioning in particular, so that there is a drawback that it is not suitable for measurement of a level where positioning is a problem.

The present invention has been made in view of the above circumstances, and a near magnetic field probe for detecting a current by performing a near magnetic field detection necessary when a current to be a noise source is brought close to an object to be measured. An object of the present invention is to provide a near-field probe unit and a near-field probe array including the near-field probe, and a near-field probe, a near-field probe unit, and a magnetic field measurement system including the near-field probe array in a magnetic field measurement unit. Particularly, it is an object of the present invention to reduce the measurement error by improving the positioning accuracy of the near magnetic field probe, the near magnetic field probe unit or the near magnetic field probe array with a simple configuration.

[0007]

In order to achieve the above object, the invention according to claim 1 is a near magnetic field probe having a loop coil formed of a flat surface as a detecting portion, and the loop coil is generally arranged via an insulator. It is characterized by being stacked at the same position, by stacking the loop coil constituting the near-field probe at approximately the same position via an insulator in this way, when approaching the measurement object,
Positioning can be performed by comparing outputs of a plurality of stacked coils.

According to a second aspect of the present invention, in a near magnetic field probe having a plane loop coil as a detecting portion, the loop coil is formed of a conductive thin film, and the thin film coil is substantially the same through an insulating thin film. It is characterized by being stacked at a position, by stacking the thin-film coil constituting the near-field probe at approximately the same position through the insulating thin film in this way, when approaching the measurement object,
Positioning can be performed by comparing outputs of a plurality of stacked coils. In addition, since the laminated coil and insulating layer are composed of thin films, a thin coil can be formed with a small size, and the insulating layer can be formed thin, so that the coil can be laminated at a narrower interval and positioning with high resolution can be performed. It will be possible.

The invention according to claim 3 is the invention according to claim 1 or 2.
In the near-field probe described in the above, a transmission line that follows the coil unit on a substrate on which a coil is laminated, an amplifier unit or an impedance converter unit to which each output of the coil unit is input via the transmission line, and the amplifier unit. Alternatively, a display unit for displaying the output of the impedance converter unit is provided, and thus the coil unit, the transmission line, the amplifier unit or the impedance converter unit, and the display unit are provided on the substrate of the near-field probe. By providing the portion, the function of magnetic field measurement can be realized only by the probe having a simple structure.

The invention according to claim 4 is characterized in that at least two or more surfaces of a support member having a plurality of surfaces are provided.
Or a structure in which the near-field probe described in 3 is attached, and the near-field probe having a structure in which the near-field probe is attached to two or more surfaces of the support member having a plurality of surfaces as described above. By using a unit, it is possible to perform detection with two or more probes facing different directions, so that it is possible to perform measurement with high positioning accuracy and to detect the magnetic field vector.

The invention according to claim 5 is characterized in that a plurality of near magnetic field probes according to claim 1, 2 or 3 or a plurality of near magnetic field probe units according to claim 4 are provided on a support member to form an array. Therefore, by providing a near magnetic field probe array in which a plurality of near magnetic field probes or near magnetic field probe units are arranged in this way, it is possible to perform measurement with each of the plurality of arranged probes or each probe unit, It is possible to measure with high positioning accuracy and to measure the magnetic field distribution.

The invention according to claim 6 is the invention according to claim 1 or 2.
An amplifier section or an impedance converter section is connected to the near magnetic field probe described above, the near magnetic field probe unit according to claim 4, or the near magnetic field probe array according to claim 5, and the amplifier section or the impedance converter section is connected to the measurement section. In this way, by providing a magnetic field measurement system in which the near magnetic field probe or the near magnetic field probe unit or the near magnetic field probe array is connected to the measuring unit via the amplifier unit or the impedance converter unit in this way, It becomes possible to provide a system capable of highly accurate positioning and capable of detecting a minute signal.

According to a seventh aspect of the present invention, in the near-field probe according to the third aspect or the near-field probe in the magnetic field measurement system according to the sixth aspect, the probe is connected to the coil portion via a transmission line on a substrate. Is provided, and an amplifier section or an impedance converter section composed of a chip part is connected to the pad, and the chip part is attached to the pad provided on the substrate for producing the probe in this way. Since signal processing such as amplification can be performed near the signal source (coil) by connecting the amplifier section or the impedance converter section configured by
The / N ratio can be improved and minute signals can be measured.

The invention according to claim 8 is the near-field probe according to claim 3 or the near-field probe in the magnetic field measurement system according to claim 6, wherein a coil part, a transmission line, an amplifier part, or The impedance converter section is characterized by being provided in a semiconductor process, and by providing the coil section, the transmission line, the amplifier section or the impedance converter section on the substrate in the semiconductor process, a high precision Since the near magnetic field probe can be realized with a compact structure and signal processing such as amplification can be performed in the vicinity of the signal source (coil), the S / N ratio can be improved and a minute signal can be measured.

According to a ninth aspect of the present invention, a plurality of near magnetic field probes according to any one of claims 1, 2, 3, 7 and 8 or near magnetic field probe units according to claim 4 are provided on a supporting member. In addition, the size of the coils of the plurality of near-field probes or the near-field probe unit is changed, and a configuration including a plurality of probes with different coil dimensions is provided. Due to
It becomes possible to measure with high positioning accuracy,
And since the magnetic field can be measured with each coil size,
Following a rough magnetic field measurement with a large coil size probe capable of measuring a wide area, it becomes possible to perform a detailed magnetic field measurement with a smaller coil size probe.

The invention according to claim 10 is the invention as claimed in claim 1,
The near magnetic field probe according to any one of 3, 7, and 8, the near magnetic field probe unit according to claim 4 or 10, or the near magnetic field probe array according to claim 5, and the near magnetic field probe, the near magnetic field probe unit, or the near magnetic field. The present invention is characterized by comprising means for moving the probe array in three dimensions and a measuring unit for detecting a signal obtained by the near magnetic field probe, the near magnetic field probe unit, or the near magnetic field probe array. High-precision magnetic field distribution can be measured by using a system that performs magnetic field measurement by moving the near-field probe, near-field probe unit, or near-field probe array in three dimensions (including, of course, one-dimensional and two-dimensional movement). And, it becomes possible to perform positioning with high accuracy.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below in detail with reference to the illustrated embodiments.

(Embodiment 1) First, an embodiment of claim 1 will be described. 1A and 1B are explanatory views of a configuration and a manufacturing method of a near magnetic field probe showing an embodiment of claim 1. As an example of a method of manufacturing a near magnetic field probe, first, as shown in FIG. 1A, a conductive foil 5 such as a metal foil is laminated via an insulating sheet 6. At the time of this lamination, the bonding pad portion 4 is excluded and the bonding is performed with an epoxy adhesive or the like. Reference numeral 7 in FIG.
The area indicated by is the bonded portion. After that, as shown in FIG. 1C, the laminated body is cut into a coil portion 2, a parallel line portion 3 serving as a transmission line, and a connection pad portion 4, and unnecessary portions are removed to obtain the structure shown in FIG. The near-field probe 1 having the structure shown in the plan view of (d) and the side view of (e) is obtained. The shape of the coil portion 2 is shown as an example of a circular loop coil in FIG. 1, but it may be a rectangular loop coil or the like.

Next, FIG. 2 is a diagram showing an example of use of the near magnetic field probe of the present embodiment. FIG. 2A is a diagram showing a magnetic field of a printed wiring board (PCB) wiring or the like to be measured using the near magnetic field probe. The figure which shows the schematic structural example of a measurement system at the time of measuring, (b) is the figure which looked at the near-field probe and PCB of (a) from the side direction (PCB is displayed by the cross section). Since the voltage (induced electromotive force) generated when the magnetic field generated from the measurement object is linked to the coil portion 2 is obtained at both ends of the pad portion 4 as a signal through the parallel line portion 3, it is necessary to connect to this pad portion 4. The conductor 9a is connected, and the other end of the conductor 9a for connection is connected to the oscilloscope 1 via the switch 9.
If it is connected to a measuring instrument such as 0, a simple measuring system is constructed. Incidentally, FIG. 2 shows an example of the near magnetic field probe 1 in which the coil portion 2 is composed of three coils having the same configuration,
In this example, the coil shape is rectangular, but the structure in which the conductive foil 5 and the insulating sheet 6 are alternately laminated is the same as in FIG. As an example of the target measurement object, FIG. 2 shows an example of the wiring 8b that connects the LSIs 8a on the printed wiring board (PCB) 8, and the near magnetic field probe 1 is brought close to the wiring 8b. At this time, in the determination that the coil portion 2 of the probe 1 is directly above the wiring, by comparing the outputs from the coils on both sides of the coil portion 2 with the oscilloscope 10, it is possible to easily improve the positioning accuracy in the one-axis direction. . That is, when the central axis of the coil portion 2 is inclined with respect to the PCB 8, or the wiring 8 to be measured on the PCB 8
If there is a difference in the distance between b and the coils on both sides of the coil unit 2, a difference occurs in the outputs of the coils on both sides. Therefore, if positioning is performed so as to eliminate this difference, the coil unit 2 of the probe 1 will be wired. It can be positioned directly above with high accuracy.

Next, FIG. 3 is a diagram showing another example of use of the near magnetic field probe of this embodiment. In addition to the configuration of the measurement system similar to that of FIG. 2, the front surface of the coil portion 2 of the near magnetic field probe 1 is shown. This is an example in which the spacer 11 is attached to. As shown in FIG. 3, when the wiring 8b on the printed wiring board (PCB) 8 or the like is used as the measurement object, the spacer 11 provided on the front surface of the coil portion 2 of the near magnetic field probe 1 in advance is provided on the PCB 8.
Since the distance between the PCB 8 and the probe is kept constant by contacting the wiring 8b, the positioning can be performed only in the parallel movement direction, and the positioning of the near magnetic field probe 1 described above can be facilitated.

Next, FIG. 4 is a diagram showing still another example of use of the near-field probe of this embodiment. This example is one having a curved surface (for example, a printed wiring board 1 having a curved surface).
2) The wiring 12b and the like on the top is used as an object to be measured, and the coil portion 2 of the near-field probe 1 is configured to include five laminated coils. When the wiring 12b or the like on the printed wiring board 12 having a curved surface as shown in FIG. 4 is used as an object to be measured, the spacer 13 attached to the front surface of the coil portion 2 is composed of a curved surface and is shown in the drawing. By comparing the outputs of the two coils on both sides of the near-field probe 1 composed of five coils as described above, the positioning accuracy of the contact angle and the positioning in the parallel movement direction are possible.

As described above, in this embodiment, the loop coils 2 constituting the near magnetic field probe 1 are laminated at substantially the same position with the insulator 6 interposed therebetween, so that the loop coils 2 are laminated when brought close to the object to be measured. Furthermore, since the outputs of a plurality of coils can be compared to perform positioning, high-accuracy positioning can be performed with a simple structure, and high-accuracy measurement can be performed. The conductive foil 5 forming the coil portion 2, the parallel line portion 3 and the pad portion 4 is made of copper (Cu), aluminum (A).
1), silver (Ag), gold (Au), platinum (Pt), or other metal material or other conductive material. The insulating sheet 6 may be a flexible substrate such as polyethylene terephthalate or polyimide, or an insulating substrate such as glass or quartz depending on the process. Also, the same configuration can be realized by laminating an insulating substrate on which a conductive foil such as an Al foil is previously formed.

(Embodiment 2) Next, an embodiment of claim 2 will be described. 5 and 6 are explanatory views of a method and a structure for manufacturing a near magnetic field probe showing an embodiment of claim 2, FIG. 5 shows a manufacturing process of the near magnetic field probe, and FIG. The structure of a magnetic field probe is shown. That is, the near magnetic field probe 20 of the present embodiment is shown in FIGS.
(C), manufactured in the order of FIG. In addition, the plan view and the cross-sectional view are shown together in each process drawing. As shown in FIG. 6, the near magnetic field probe 20 includes a substrate 21
A coil portion 22 having a laminated structure made of a conductive thin film, a transmission line (parallel line) portion 23 for the output thereof, and a pad portion 24 connected to the transmission line are formed on the upper portion, and three conductive thin films are formed. An example having a structure in which probes are stacked is shown.

As an example of the method of manufacturing the near magnetic field probe of the present embodiment, first, the first coil, the first transmission line (parallel line) and the first pad are formed on the quartz substrate 21. An Al thin film is formed as the first conductive thin film by a sputtering method. After that, by a general photolithography technique and wet etching using H ₃ PO ₄ + HNO ₃ + CH ₃ COOH + H ₂ O, the first coil 22a and the first transmission path ( The parallel line) 23a and the first pad portion 24a are provided to form the first probe 20a (FIG. 5A). Next, after forming a SiO ₂ film by the sputtering method, RIE (Reac) using general photolithography technology and CF ₄ + H ₂ is performed.
The first coil 22a and the first coil 22a
The first insulating layer 25a is formed on the transmission line 23a (FIG. 5B). Next, the second conductive thin film is formed of Al as the first insulating layer 25 in the same manner as in the process of forming the first conductive thin film.
A film is formed on a, and the same general photolithography technique as above is used and H ₃ PO ₄ + HNO ₃ + CH ₃ COOH + H ₂
By wet etching using O, a second coil 22b formed of a second conductive thin film, a second transmission line (parallel line) 23b, and a second pad portion 24b are provided to form the second probe 20b. After the formation, the second insulating layer 25b is further formed of SiO ₂ similarly to the first insulating layer 25a, and the second coil 22b and the second transmission line (parallel line) are formed.
It is provided on 23b (FIG. 5C). Next, a third conductive thin film is formed of Al in the same manner as the first and second conductive thin films to form on the second insulating layer 25b, and the same general photolithography technique as described above is used. , H ₃ PO ₄ + HNO ₃ + C
H ₃ COOH + by wet etching using a H ₂ O, the third coil 22c, which is composed of the third conductive thin film
And the 3rd transmission line (parallel line) 23c and the 3rd pad part 24c are provided, and the 3rd probe 20c is formed (FIG. 6). Hereinafter, if necessary, an insulating layer, a coil, a transmission line, and a pad portion are sequentially formed in the same manner as above, and a fourth probe,
It is also possible to form a fifth probe ..., and thus it is possible to obtain a near magnetic field probe having a multilayer structure in which a plurality of probes made of a conductive thin film are laminated with an insulating thin film interposed therebetween.

By the above-described thin film probe manufacturing method, a probe constituent member such as a coil can be formed with a small size, and an insulating layer can be formed thin, so that the coils can be stacked at narrower intervals. It is possible to provide a near magnetic field probe capable of positioning with higher resolution. Therefore, in the near-field probe 20 of the present embodiment, it becomes easier to position the coil portion 22 with respect to a smaller measurement target, and it is possible to arbitrarily perform highly accurate measurement.

Further, FIG. 7 shows another example of this embodiment, in which the first insulating layer 25a is formed in the first step in the above manufacturing process.
Of the second insulating layer 25b.
Are formed up to above the second pad portion 24b, and the through hole 26 is formed in the insulating layer on the first and second pad portions 24a and 24b.
It is an example of forming. In this way, after forming the first and second insulating layers 25a and 25b including the pad portions, the first and second insulating layers 25a and 25b are formed.
The through holes 26 may be provided in the second insulating layers 25a and 25b so as to be electrically connected to the pad portions 24a and 24b.

The coils 22a, 22b and 22c, transmission lines (parallel lines) 23a, 23b and 23c, and the pad 24 are provided.
As a material for forming a, 24b, and 24c, in addition to Al,
A metal material such as Ag, Au, Pt, or another conductive material may be used. The substrate 21 may be an insulating substrate other than quartz or a flexible insulating substrate such as polyethylene terephthalate or polyimide. The conductive thin film of Al or the like may be formed by a sputtering method or another vapor deposition method. In addition to the sputtering method, the film forming method of the insulating layer such as SiO _{2 is} also
EB (Electron Beam) evaporation method and CVD (Chemical Vapo)
Other film forming methods such as the r Deposition) method may be used. The insulating layer material may be SiO ₂ or another insulating material such as Si ₃ N ₄ . Although the etching of the insulating layer may be wet etching, when the substrate is also etched, the back surface of the substrate needs to be protected with a resist or the like.

(Embodiment 3) Next, an embodiment of claim 3 will be described. FIG. 8 is a plan view of a near magnetic field probe showing an embodiment of claim 3. In this embodiment, after the near-field probe 20 having the structure in which the same three probes as those of the second embodiment are laminated on the substrate 21 ′, the outputs of the coils of the coil unit 22 are provided on the same substrate 21 ′. This is an example of a near-field probe 27 in which an input amplifier unit 29 and a display device 31 for displaying the output of the amplifier unit 29 are provided, and a detection unit (probe) and a measurement unit are integrated.

More specifically, the first probe of the first probe 20 of the probe (in this example, the probe of the configuration shown in FIG. 7) 20 formed on the substrate 21 'through the same manufacturing process as that of the second embodiment. Pad 24a-1 on one side of pad portion 24a
Is connected to the inner conductor portion of the coaxial cable 28a, and the outer conductor portion of the coaxial cable 28a is connected to the pad 24a-2 on the other side of the first pad portion 24a. And coaxial cable 2
The other end of 8a is connected to the amplifier section 29. Similarly, the pads 24b-1 and 24c-1 on one side of the second and third pad portions 24b and 24c of the second and third probes 20 of the probe 20, respectively.
To the inner conductors of the coaxial cables 28b and 28c, and the pads 24b-2 and 24c-2 on the other side of the second and third pad portions 24b and 24c are connected to the coaxial cables 28b and 2c.
The outer conductor portions 8c are connected to each other. Then, the other ends of the coaxial cables 28b and 28c are connected to the amplifier section 29. The amplifier unit 29 also includes an AD conversion unit 29a in addition to the amplifier, and the output of the AD conversion unit 29a is input to the display device 31 via the changeover switch 30. Therefore, the output of each coil of the probe 20 is amplified and AD-converted by the amplifier unit 29 and input to the display device 31 to display the measurement result. The changeover switch 30 can be used to change over each probe.

Like the near magnetic field probe 27 having the structure shown in FIG. 8, the amplifier section 29 is provided on the substrate 21 'on which the probe 20 is manufactured, so that the signal from the probe 20 is amplified and AD-converted. , A minute signal can be detected. Therefore, the function of the measurement system as shown in FIGS. 2, 3, and 4 of the first embodiment can be realized only by the near-field probe 27 having a simple structure, and the system with improved portability and operability can be realized.

Incidentally, each pad portion 24a, 2 of the probe 20
The connection between 4b and 24c and the amplifier section 29 can be made by using a normal cable or the like. Further, the display device 31 can be realized by an ordinary liquid crystal panel. Switching of each probe can be performed by the changeover switch 30 provided in front of the display device 31, but a changeover switch may be provided in front of the amplifier unit 29 to perform switching. Further, the amplifier unit 29 may be an impedance converter unit, and the impedance converter unit may be configured to include an AD converter unit, and such an impedance converter unit may also be used for S / N. The ratio can be improved.

Next, FIG. 9 is a plan view of a near magnetic field probe showing another embodiment of the third aspect. In this embodiment, as in the embodiment of FIG. 8, a near magnetic field probe 20 having a structure in which three probes similar to those of the second embodiment are laminated on a substrate 21 ′, and then the same magnetic field probe 3 is placed on the same substrate 21 ′. An amplifier unit 33 to which the output from each coil of one probe is input, and two display devices 35 and 36 for displaying the output from the amplifier unit 33 are provided, and the detection unit (probe) and the measurement unit are integrated. It is an example of the near magnetic field probe 32.

More specifically, the first probe of the first probe 20 of the probe (in this example, the probe having the configuration shown in FIG. 7) 20 formed on the substrate 21 'through the same manufacturing process as that of the second embodiment. Pad 24a-1 on one side of pad portion 24a
Is connected to the inner conductor portion of the coaxial cable 28a, and the outer conductor portion of the coaxial cable 28a is connected to the pad 24a-2 on the other side of the first pad portion 24a. And coaxial cable 2
The other end of 8a is connected to the amplifier section 33. Similarly, the pads 24b-1 and 24c-1 on one side of the second and third pad portions 24b and 24c of the second and third probes 20 of the probe 20, respectively.
To the inner conductors of the coaxial cables 28b and 28c, and the pads 24b-2 and 24c-2 on the other side of the second and third pad portions 24b and 24c are connected to the coaxial cables 28b and 2c.
The outer conductor portions 8c are connected to each other. Then, the other ends of the coaxial cables 28b and 28c are connected to the amplifier section 33.

In the amplifier section 33, in addition to an amplifier for amplifying the output from the second probe located at the center of the laminated structure probe 20, there are provided a third probe located above and below the probe 20. A differential amplifier section 34a for obtaining the result of comparing the outputs of the first probe and an amplifier for amplifying the difference are provided, and further, an AD conversion section 34b for AD-converting the output from each amplifier is also included. ing. Further, on the substrate 21 ′, a display device (A) 35 for amplifying the output from the second (center) probe and displaying the AD-converted output by the AD converter 34b, and the first
A display device (B) 36 is provided for amplifying the difference between the outputs of the (lower) probe and the third (upper) probe and displaying the differential output AD-converted by the AD converter 34b. Therefore, while the magnetic field is detected by the output from the center probe displayed on the display device (A) 35, the positioning can be performed by the differential output of the upper and lower probes displayed on the display device (B) 36. It will be possible. For example, when measuring noise from the wiring of a printed wiring board (PCB) which is the measurement object, the diameter of the coil of the probe is set to about the minimum pitch of the wiring of the PCB or smaller, and the thickness between the probes is further reduced. If is smaller than the pitch of the wiring of the PCB, positioning of the wiring pitch level of the PCB can be easily realized while measuring the noise from the wiring of the PCB.

The pad portions 24a, 2 of the probe 20 are
An ordinary cable or the like can be used to connect the amplifiers 33 to the cables 4b and 24c. Further, the display device (A) 35 and the display device (B) 36 can be realized by an ordinary liquid crystal panel. Further, since the configuration of FIG. 9 includes two display devices for measuring the magnetic field and for positioning, the changeover switch as shown in FIG. 8 is unnecessary. Further, the amplifier section 33 may be an impedance converter section, and the impedance converter section may include a differential amplifier section and an AD converter section. Also, the S / N ratio can be improved by the above.

(Embodiment 4) Next, an embodiment of claim 4 will be described. FIG. 10 is a perspective view of an essential part of a near magnetic field probe unit showing an embodiment of claim 4. The near magnetic field probe unit 37 shown in FIG. 10 is configured such that the near magnetic field probe 1 having the configuration shown in the first embodiment is attached to at least two or more surfaces of a probe supporting member 38 having a plurality of surfaces. Since the plurality of surfaces of the probe supporting member 10 face different directions, the near magnetic field probes 1 attached to two or more surfaces whose surface normal directions do not match.
By detecting the magnetic field with, it is possible to perform measurement with high positioning accuracy and vector detection. In this embodiment, the configuration using the near magnetic field probe 1 having the configuration shown in the first embodiment is shown. However, the near magnetic field probe having the configuration shown in FIG. The near magnetic field probe having the configuration shown in FIG. 8 or 9 may be attached to at least two or more surfaces of the probe supporting member 38.

(Embodiment 5) Next, an embodiment of claim 5 will be described. FIG. 11 is a perspective view of a near magnetic field probe array showing an embodiment of claim 5. The near-field probe array 39 shown in FIG. 11 is provided on the probe supporting substrate 40 as shown in FIG.
A plurality of near magnetic field probes 20 having the structure shown in FIG. 4 are arranged at a constant interval to form an array. By measuring the magnetic field from the measurement object 42 on the measurement object support substrate 41 with each of the probes 20 arranged and arrayed in this way, it is possible to measure the magnetic field distribution with high positioning accuracy. Become. In the present embodiment, the configuration using the near magnetic field probe having the configuration shown in FIG. 7 of the second embodiment is shown. However, on the probe supporting substrate 12, the near magnetic field probe having the configuration shown in the first embodiment, or A plurality of near magnetic field probes having the configuration shown in FIG. 6 of the second embodiment, the near magnetic field probe having the configuration shown in FIG. 8 or FIG. 9 of the third embodiment, or the near magnetic field probe unit having the configuration shown in the fourth embodiment are provided. It may be arranged and arrayed.

(Embodiment 6) Next, an embodiment of claim 6 will be described. FIG. 12 is a schematic configuration diagram of a magnetic field measurement system showing an embodiment of claim 6. In the magnetic field measurement system of the present embodiment, the near magnetic field probe 1 produced in the first embodiment is provided on the probe support substrate 43, the amplifier section 44 is connected to the near magnetic field probe 1, and the near magnetic field probe 1 is amplified by the amplifier section 44. This is an example of a magnetic field measurement system having a configuration in which a signal output is connected to a spectrum analyzer 45. With the configuration as shown in FIG. 12, even when the magnetic field strength from the measurement object (not shown) is very small, the signal from the near magnetic field probe 1 is amplified by the amplifier section 44, so that high accuracy can be obtained. A system capable of positioning and detecting a minute signal can be provided. In addition, in the present embodiment, an example using the near magnetic field probe 1 having the configuration shown in the first embodiment is shown.
The amplifier section 44 is connected to the near-field probe having the configuration shown in FIG. 6 or 7 of the second embodiment, the near-field probe unit having the configuration shown in the fourth embodiment, or the near-field probe array having the configuration shown in the fifth embodiment. Further, the amplifier section 44 may be connected to the spectrum analyzer 45. Further, the amplifier unit 44 may be an impedance converter unit, and the S / N ratio can be improved also by the impedance converter. Further, the measuring unit is not limited to the spectrum analyzer, and may be another measuring device or display device, and may be configured to perform arithmetic processing by a microcomputer or the like for display.

(Embodiment 7) Next, an embodiment of claim 7 will be described. FIG. 13 is a plan view of a near magnetic field probe showing an embodiment of claim 7. In this embodiment, the second embodiment is provided on the substrate 21 '.
After manufacturing the near-field probe 20 having a structure in which three probes similar to those in FIG. 7 are laminated, the pad portions 24a-1, 2 and 24b-1, 2 of the probe 20 provided on the substrate 21 'are manufactured.
An amplifier section 47 composed of chip parts is directly connected to 24c-1 and 24c, and terminals provided on the back surface of the amplifier section 47 are connected to respective pads by bumps. Further, the amplifier section 47 includes an AD conversion section 47a in addition to a normal amplification amplifier.
A DC power supply 51 is connected to the amplifier section 47 via a power supply connection pad 50. The outputs of the three stacked coils of the coil section 22 of the probe 20 are the transmission path sections (first, second, and third transmission paths (parallel lines) are stacked) 23 and the pad section 2 that follow.
Amplifier section 4 via 4a-1,2, 24b-1,2, 24c-1,2
7 is inputted, amplified and AD-converted by the amplifier unit 47, and outputted. Then, the output of the amplifier unit 47 is selectively input to the display device 49 via the changeover switch 48 provided on the same substrate 21 ', and each output is displayed.

With the above configuration, the function of the measurement system as shown in FIGS. 2, 3 and 4 of the first embodiment can be realized only by the near magnetic field probe 46 having a more compact configuration. Further, since the amplification can be performed in the vicinity of the signal source (coil 22) by the amplifier 47, S /
The N ratio can be improved, minute signals can be measured, and a probe that can perform highly accurate positioning and measurement can be realized. Further, the configuration of the present embodiment is similar to that of the third embodiment, but since the amplifier section 47 composed of chip parts is directly connected to the pad section of the probe, the amplifier section as in the third embodiment. The cost can be further reduced as compared with the configuration in which the pad portion and the pad portion are connected by a coaxial cable or the like.

The near magnetic field probe 4 having the structure shown in FIG.
6 can measure the magnetic field by itself, but Example 4
Similar to (FIG. 10), the near magnetic field probe unit of the present embodiment can be attached to at least two or more surfaces of a support member having a plurality of surfaces to form a near magnetic field probe unit. Further, similar to the fifth embodiment (FIG. 11), a near magnetic field probe array can be constructed by arranging a plurality of near magnetic field probes 46 of the present embodiment at a constant interval on the supporting substrate to form an array.

Further, in this embodiment, the structure using the probe having the structure shown in FIG. 7 of the second embodiment is shown.
The configuration may be such that the near field probe having the configuration shown in the first embodiment or the near field probe having the configuration shown in FIG. Further, the amplifier section 47 may be an impedance converter section, and it is possible to improve the S / N ratio also by using the impedance converter so that each functional section is included therein.

(Embodiment 8) Next, an embodiment of claim 8 will be described. 14 and 15 are explanatory views of a method and structure for manufacturing a near magnetic field probe according to an eighth embodiment of the present invention. The near magnetic field probe 60 of the present embodiment is shown in FIGS. 15 (a) and 15 (b) are sequentially manufactured.
In addition, the plan view and the cross-sectional view are shown together in each process drawing. The near magnetic field probe 60 of this embodiment is shown in FIG.
As shown in FIG. 7, a near magnetic field probe having the same configuration as that of the second embodiment is manufactured on the Si substrate 61 on which the insulating layer 65 is formed. Before the probe is manufactured, the amplifier section 67 is formed on the Si substrate 61. A probe is prepared in advance by a semiconductor process, and the insulating layer 65 is formed on the probe by the same process as that of the second embodiment.
64b and 64c and the amplifier 67 are connected to through holes 66a,
The configuration is such that they are connected via 66b and 66c.

As an example of the method of manufacturing the near magnetic field probe of this embodiment, first, the amplifier section 67 is formed on the Si substrate 61 by a known semiconductor process, and then SiO ₂ is formed on the entire surface of the Si substrate 61 by the sputtering method or the like. The insulating layer 65 is formed. And general photolithography technology and CF ₄ +
A through hole 66a for connecting the first pad portion to the amplifier portion 67 is formed in the SiO ₂ insulating layer 65 by RIE or the like using H ₂ . Next, on the SiO ₂ insulating layer 65 of the Si substrate 61, as a first conductive thin film for forming the first coil, the first transmission line (parallel line), and the first pad, Al by sputtering is used. Thin film is formed. After that, general photolithography technology and H ₃ PO ₄ + H
By wet etching using NO ₃ + CH ₃ COOH + H ₂ O, the first coil 62a and the first transmission line (parallel line) 63a and the first transmission line (parallel line) 63a and the first conductive thin film are formed.
The pad portion 64a is provided to form the first probe 60a. At this time, the first pad portion 64a is formed on the Si substrate 61 through the through hole 66a provided in the insulating layer 65 at the time of manufacturing.
It is connected to the upper amplifier section 67 (FIG. 14A).

Next, after forming a SiO ₂ film by the sputtering method, a general photolithography technique and CF ₄ + are used.
The first coil 62a and the first coil 62a are formed by RIE using H ₂ .
The first insulating layer 68 is formed on the transmission line 63a (FIG. 14B). At this time, though not shown, through holes for connecting the second pad portion to the amplifier portion are provided in the first insulating layer 68 and the SiO ₂ insulating layer 65. Next, a second conductive thin film is formed of Al on the first insulating layer 68 in the same manner as in the process of forming the first conductive thin film, and a general photolithography technique is used as described above.
By wet etching using H ₃ PO ₄ + HNO ₃ + CH ₃ COOH + H ₂ O, the second coil 62b and the second transmission line (parallel line) 6 made of the second conductive thin film are formed.
3b and the second pad portion 64b are provided to form the second probe 60b. At this time, the second pad portion 64b is connected to the amplifier portion 67 on the Si substrate 61 through the through hole 66b provided in the first insulating layer 68 and the SiO ₂ insulating layer 65 at the time of manufacturing. Next, the second insulating layer 69 is formed of SiO ₂ in the same manner as the first insulating layer 68, and the second coil 62 is formed.
b and the second transmission line (parallel line) 63b are provided (FIG. 15A). Then, the third pad portion is connected to the amplifier portion on the second insulating layer 69, the first insulating layer 68, and the SiO ₂ insulating layer 65 by the general photolithography technique and RIE using CF ₄ + H _2. A through hole for

Next, a third conductive thin film is formed of Al in the same manner as the first and second conductive thin films and is formed on the second insulating layer 69. By the lithography technique and wet etching using H ₃ PO ₄ + HNO ₃ + CH ₃ COOH + H ₂ O, the third coil 62c and the third transmission line (parallel line) 63c and the Third pad portion 64c is provided to form third probe 60c. At this time, the third pad portion 64
c is connected to the amplifier section 67 on the Si substrate 61 through the through holes 66c provided in the second insulating layer 69, the first insulating layer 68, and the SiO ₂ insulating layer 65 at the time of manufacturing (FIG. 15).
(B)).

By manufacturing the near-field probe 60 as described above, it is possible to realize a near-field probe having a function similar to that of the second embodiment and an amplifier part integrally with a compact structure. Since the amplifier 67 can amplify the signal in the vicinity of the signal source (coil 62), the S / N ratio can be further improved, a minute signal can be measured, and more accurate positioning and measurement can be performed. A possible near magnetic field probe can be realized.

The amplifier section 6 formed on the Si substrate 61
7 may be an impedance converter part, in which A
A configuration including a D converter may be included, and the S / N ratio can be improved also by the impedance converter.
Further, similarly to the third embodiment, a measuring unit such as a display device may be provided on the insulating layer 65 in the empty space of the substrate 61 and connected to the amplifier unit 67 via the through hole. Further, as a semiconductor substrate forming the probe, S
In addition to the i substrate, a GaAs substrate or the like can be similarly used.

(Embodiment 9) Next, an embodiment of claim 9 will be described. FIG. 16 is a plan view of a near magnetic field probe unit showing an embodiment of claim 9, and the near magnetic field probe unit of the present embodiment is manufactured on a supporting substrate 70 with the same configuration as that of FIG. 7 of the second embodiment. A plurality of near magnetic field probes 71, 72, 7
3, and the plurality of near magnetic field probes 71, 7
The size of the coil portions 71a, 72a, 73a of 2, 73 is changed. By thus providing a plurality of probes 71, 72, 73 having different coil dimensions, it is possible to perform measurement with high positioning accuracy and magnetic field measurement with each coil dimension. Therefore, following the rough magnetic field measurement with the probe 73 having a large coil size capable of measuring a wide area, detailed magnetic field measurement can be performed with the probes 71 and 72 having a smaller coil size.

In the embodiment of FIG. 16, the large coil portion 73a overlaps the small coil portions 71a and 72a, but the insulating layer 74 is interposed in the portion where the coil portions overlap when the probe is manufactured. A short circuit is prevented at the portion where the large and small coil portions overlap. Further, the embodiment of FIG. 16 shows an example in which a plurality of near-field probes 71, 72, 73 having the same configuration as that of FIG. 7 of the embodiment 2 are manufactured on the support substrate 70 by changing the size of the coil portion. However, in addition to this, the near-field probe having the configuration shown in the first embodiment, the near-field probe having the configuration shown in FIG. 6 of the second embodiment, or the near-field probe having the configuration shown in FIG. 8 or 9 of the third embodiment is used. It is also possible to make a near magnetic field probe unit in which a plurality of coil portions are provided with different dimensions and provided on a supporting substrate.
Further, the size of each probe of the near magnetic field probe unit having the structure shown in the fourth embodiment is made different, or a plurality of near magnetic field probe units having the structure shown in the fourth embodiment are provided on the supporting substrate to make the coil size different. Other configurations are possible. Furthermore, in the near-field probe array shown in the fifth embodiment, it is possible to arrange two or more kinds of probes having different coil sizes to form an array.

(Embodiment 10) Next, an embodiment of claim 10 will be described. FIG. 17 is a schematic configuration diagram of a magnetic field measurement system showing an embodiment of claim 10. In the magnetic field measurement system of the present embodiment, the near magnetic field probe 1 manufactured in the first embodiment is installed on an XYZ stage 76 that moves three-dimensionally, and the signal output obtained by the coil unit 2 of the near magnetic field probe 1 is switched. The system is connected to a measuring unit such as an oscilloscope 10 via a switch 9. In this way, the near magnetic field probe 1 is installed on the XYZ stage 76, and three-dimensional (including one-dimensional and two-dimensional, of course, one-dimensional and two-dimensional is included) at the target position of the measurement object (for example, the wiring portion 8b of the printed wiring board (PCB) 8). ) To move the probe 1 to measure the magnetic field, it is possible to measure the magnetic field distribution with high accuracy, and at that time, it is possible to perform positioning with high accuracy.

In the above embodiment, the measuring unit is not limited to the oscilloscope, but may be a spectrum analyzer or other measuring device or display device. Also, XYZ stage 7
6 shows the example in which the near-field probe manufactured in Example 1 is installed on the XYZ stage 76.
A magnetic field measurement system having a configuration in which a near magnetic field probe having the configuration shown in any one of 7 and 8 is installed, a magnetic field measurement system having a configuration in which a near magnetic field probe unit having the configuration shown in Example 4 or 9 is installed, or Example 5. It is also possible to use a magnetic field measurement system having a configuration in which the near magnetic field probe array having the above configuration is installed.

[0053]

As described above, the near-field probe according to the first aspect of the present invention has a structure in which the loop coils formed of planes are laminated at substantially the same position with the insulator interposed therebetween, so that the near-field probe is close to the object to be measured. In doing so, the outputs of a plurality of stacked coils can be compared to perform positioning, so that highly accurate positioning can be performed with a simple structure, and highly accurate measurement can be performed.

In the near-field probe according to the second aspect of the invention, the loop coil is made of a conductive thin film, and the thin film coils are laminated at approximately the same position with the insulating thin film interposed therebetween, thereby providing a proximity to the object to be measured. In doing so, it is possible to perform positioning by comparing the outputs of a plurality of laminated coils. In addition, since the laminated coil and insulating layer are made of thin film, a thin coil can be formed with a small size, and the insulating layer can be formed thin, so that the coil can be laminated at a narrower interval and positioning can be performed with high resolution. It can be carried out. Therefore,
Highly accurate positioning can be performed with a simple structure, and highly accurate measurement can be performed.

In addition to the structure of claim 1 or 2, the near-field probe according to claim 3 has a transmission line following the coil part on a substrate on which coils are laminated, and each of the coil parts via the transmission line. By providing an amplifier unit or impedance converter unit to which an output is input and a display unit that displays the output of the amplifier unit or impedance converter unit, the function of magnetic field measurement can be performed only by a probe with a simple structure. Can be realized. Therefore, it is possible to realize a simple measurement system that is more portable and has excellent operability.

The near-field probe unit according to claim 4 has a structure in which the near-field probe according to claim 1, 2 or 3 is attached to at least two or more surfaces of a support member having a plurality of surfaces. Since the detection can be performed by two or more probes facing different directions, it is possible to perform the measurement with high positioning accuracy and to perform the vector detection of the magnetic field.

The near magnetic field probe array according to claim 5 is
A plurality of near magnetic field probes according to claim 1, 2 or 3 or a plurality of near magnetic field probe units according to claim 4 are provided on the support member to form an array. Therefore, the measurement can be performed with high positioning accuracy and the magnetic field distribution can be measured.

According to a sixth aspect of the magnetic field measuring system, the near magnetic field probe according to the first or second aspect, the near magnetic field probe unit according to the fourth aspect, or the near magnetic field probe array according to the fifth aspect has an amplifier section or an impedance converter. By connecting the parts and connecting the amplifier part or the impedance converter part to the measurement part, it is possible to realize a system capable of performing highly accurate positioning and detecting a minute signal. be able to.

The near-field probe according to claim 7 is the near-field probe according to claim 3 or the near-field probe in the magnetic field measurement system according to claim 6, in which a coil portion is provided on a substrate on which the probe is formed via a transmission path. By providing a pad connected to the amplifier and connecting the amplifier section or the impedance converter section made of chip parts to the pad, the amplifier section or the impedance converter section amplifies in the vicinity of the signal source (coil). Since signal processing such as the above can be performed, the S / N ratio can be improved and a minute signal can be measured. Therefore, a highly accurate near magnetic field probe can be realized.

The near-field probe according to claim 8 is the near-field probe according to claim 3 or the near-field probe in the magnetic field measurement system according to claim 6, wherein a coil portion, a transmission line, and an amplifier are provided on a substrate on which the probe is manufactured. The high-accuracy near-field probe can be realized in a compact configuration by using the semiconductor process to configure the converter section or impedance converter section. Moreover, the amplifier section or impedance converter section can be used in the vicinity of the signal source (coil). Since signal processing such as amplification can be performed, the S / N ratio can be improved and a minute signal can be measured. Therefore, a highly accurate near magnetic field probe can be realized.

According to a ninth aspect of the present invention, there is provided a near field probe unit having a plurality of near field probes according to any one of claims 1, 2, 3, 7 and 8 or a plurality of near field probe units according to claim 4 on a supporting member. By providing multiple pieces and changing the size of the coils of the multiple near-field probes or near-field probe units, it is possible to perform measurements with high positioning accuracy, and to measure each coil size. Since it is possible to measure the magnetic field of, it is possible to perform a detailed magnetic field measurement with a probe with a smaller coil size, following a rough magnetic field measurement with a probe with a larger coil size that can measure a wide area, and perform highly accurate measurement. be able to.

The magnetic field measuring system according to claim 10 is the near magnetic field probe according to any one of claims 1, 2, 3, 7 and 8, or the near magnetic field probe unit according to claim 4 or 10 or claim 5. Near-field probe array, means for moving these near-field probes or near-field probe units or near-field probe arrays in three dimensions, and detection of signals obtained by near-field probes or near-field probe units or near-field probe arrays Since it consists of a measuring unit that
By moving and measuring the probe or the like in one dimension (or one dimension or two dimensions), the magnetic field distribution can be measured with high accuracy, and the positioning can be performed with high accuracy. Therefore, it is possible to realize a magnetic field measurement system capable of highly accurately measuring the magnetic field distribution with high positioning accuracy.

As described above, according to the near magnetic field probe of the present invention, the probe unit and the probe array including the near magnetic field probe, and the magnetic field measuring system including the near magnetic field probe, the probe unit, and the probe array, With such a structure, positioning is possible, and near-field can be measured with high accuracy. Further, it is possible to detect the vector of the magnetic field and the minute signal, and it is also possible to measure with a plurality of coil dimensions, and it is also possible to measure the magnetic field distribution three-dimensionally. Therefore, by using the near magnetic field probe, the probe unit, the probe array, and the magnetic field measurement system of the present invention, it is possible to obtain information useful for the EMC countermeasure of the product or the printed wiring board (PCB) with higher accuracy, and the EMC countermeasure. Can be made easier and, optionally, the product development period can be shortened.

[Brief description of drawings]

FIG. 1 is a diagram showing an embodiment of claim 1 and is an explanatory diagram of a configuration and a manufacturing method of a near magnetic field probe.

FIG. 2 is a diagram showing an example of use of the near-field probe according to claim 1, wherein FIG. 2A is a measurement system in the case where the near-field probe is used to measure a magnetic field with a wiring or the like of a printed wiring board as an object to be measured. 2B is a diagram showing the near-field probe and the printed wiring board of FIG. 7A as viewed from the side.

FIG. 3 is a diagram showing another example of use of the near-field probe according to claim 1, and is a schematic view of a measurement system in the case where the near-field probe is used to measure the magnetic field with the wiring or the like of a printed wiring board as a measurement object. It is a figure which shows the structural example.

FIG. 4 is a diagram showing still another example of use of the near-field probe according to claim 1, which is used in a measurement system for performing magnetic field measurement using the near-field probe as a measurement target such as wiring of a printed wiring board. It is a figure which shows a schematic structural example.

FIG. 5 is a diagram showing an embodiment of claim 2 and is an explanatory diagram of a configuration and a manufacturing method of a near magnetic field probe.

FIG. 6 is a diagram showing an embodiment of claim 2, and is a plan view of a near-field probe manufactured through the manufacturing process shown in FIG. 5.

FIG. 7 is a plan view of a near magnetic field probe showing another embodiment of claim 2;

FIG. 8 is a plan view of a near magnetic field probe showing an embodiment of claim 3;

FIG. 9 is a plan view of a near magnetic field probe showing another embodiment of claim 3;

FIG. 10 is a perspective view of a main part of a near-field probe unit showing an embodiment of claim 4;

FIG. 11 is a perspective view of a near magnetic field probe array showing an embodiment of claim 5;

FIG. 12 is a schematic configuration diagram of a magnetic field measurement system showing an embodiment of claim 6;

FIG. 13 is a plan view of a near magnetic field probe showing an embodiment of claim 7;

FIG. 14 is a diagram showing one embodiment of claim 8 and is an explanatory diagram of a configuration and a manufacturing method of a near magnetic field probe.

FIG. 15 is a diagram showing an embodiment of claim 8 and is an explanatory diagram of a configuration and a manufacturing method of a near magnetic field probe.

FIG. 16 is a plan view of a near magnetic field probe unit showing an embodiment of claim 9;

FIG. 17 is a schematic configuration diagram of a magnetic field measurement system showing an embodiment of claim 10;

[Explanation of symbols]

1: Near magnetic field probe 2: Coil part 3: Parallel line part 4: Connection pad part 5: Conductive foil 6: Insulating sheet 7: Adhesive part 8: Printed wiring board (PCB) 8a: LSI 8b: Wiring on PCB 9: Changeover switch 10: Oscilloscope (measurement part) 11: Spacer 12: Printed wiring board (PCB) 12b: Curved PCB wiring 20: Near magnetic field probes 20a, 20b, 20c: First and second , Third probe 21: substrate 21 'for probe production: substrate 22 for probe production: coil parts 22a, 22b, 22c: first, second and third coils 23: transmission line (parallel line) part 23a , 23b, 23c: first, second, third transmission lines (parallel lines) 24: pad portions 24a, 24b, 24c: first, second, third pad portions 25a, 25b: first, second of Edge layer 26: Through hole 27: Near magnetic field probes 28a, 28b, 28c: Coaxial cable 29: Amplifier section (or impedance converter section) 29a: AD conversion section 30: Changeover switch 31: Display device 32: Near magnetic field probe 33: Amplifier unit (or impedance converter unit) 34a: Differential amplifier unit 34b: AD converter 35: Display device (A) 36: Display device (B) 37: Near magnetic field probe unit 38: Support member 39: Near magnetic field probe array 40: probe support substrate 41: measurement target support substrate 42: measurement target 43: probe support substrate 44: amplifier section (or impedance converter section) 45: spectrum analyzer (measurement section) 46: near-field probe 47: amplifier section (or Impedance converter) chip 48: changeover switch 49: table Device 50: Power supply connection pad 51: DC power supply 60: Near magnetic field probes 60a, 60b, 60c: First, second and third probes 61: Si substrate 62: Coil parts 62a, 62b, 62c: First, first 2, 3rd coil 63: Transmission line (parallel line) part 63a, 63b, 63c: 1st, 2nd, 3rd transmission line (parallel line) 64a, 64b, 64c: 1st, 2nd, 3rd Pad portion 65: SiO ₂ insulating layers 66a, 66b, 66c: through hole 67: amplifier portion (or impedance converter portion) formed on the Si substrate 68: first insulating layer 69: second insulating layer 70: Supporting substrates 71, 72: near magnetic field probe 73 having a small coil size 73: near magnetic field probe 74 having a large coil size: insulating layer 75: near magnetic field probe unit 76: XYZ stage

Claims (10)

(57) [Claims] 1. A near magnetic field probe having a planar loop coil as a detection portion, wherein the loop coils are laminated at substantially the same position with an insulator interposed therebetween. 2. A near magnetic field probe having a plane loop coil as a detection section, wherein the loop coil is made of a conductive thin film, and the thin film coils are laminated at substantially the same position with an insulating thin film interposed therebetween. Characteristic near-field probe. 3. The near magnetic field probe according to claim 1, wherein a transmission path following the coil section is provided on a substrate on which coils are laminated, and an amplifier section to which each output of the coil section is input via the transmission path. Alternatively, a near magnetic field probe provided with an impedance converter section and a display section for displaying an output of the amplifier section or the impedance converter section. 4. At least two support members having a plurality of surfaces.
A near magnetic field probe unit having a structure in which the near magnetic field probe according to claim 1, 2 or 3 is attached to one or more surfaces. 5. A near magnetic field probe array characterized in that a plurality of near magnetic field probes according to claim 1, 2 or 3 or near magnetic field probe units according to claim 4 are provided on a support member to form an array. 6. A near magnetic field probe according to claim 1, a near magnetic field probe unit according to claim 4, or a near magnetic field probe array according to claim 5, wherein an amplifier section or an impedance converter section is connected, and the amplifier section is connected. Alternatively, the magnetic field measuring system is characterized in that the impedance converter unit is connected to the measuring unit. 7. The near magnetic field probe according to claim 3 or the near magnetic field probe in the magnetic field measurement system according to claim 6, wherein a pad for connecting to a coil portion via a transmission line is provided on a substrate for producing the probe, A near magnetic field probe characterized in that an amplifier section or an impedance converter section composed of chip parts is connected to the pad. 8. The near-field probe according to claim 3 or the near-field probe in the magnetic field measurement system according to claim 6, wherein a coil part, a transmission line, an amplifier part or an impedance converter part is provided on a substrate on which the probe is manufactured. A near magnetic field probe characterized by being provided by a semiconductor process. 9. A near field probe according to any one of claims 1, 2, 3, 7 and 8 or a near field probe unit according to claim 4 is provided on a support member, and the plurality of near field probe units are provided. A near magnetic field probe unit characterized in that the size of the near magnetic field probe or the coil of the near magnetic field probe unit is changed. 10. A near-field probe according to any one of claims 1, 2, 3, 7, and 8, a near-field probe unit according to claim 4 or 10, or a near-field probe array according to claim 5, and these. A means for moving the near-field probe, the near-field probe unit, or the near-field probe array in three dimensions, and a measuring unit for detecting a signal obtained by the near-field probe, the near-field probe unit, or the near-field probe array Magnetic field measurement system characterized by.