JP3498937B2 - Resin substrate and manufacturing method thereof - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin substrate having a metal film formed on the surface of a resin molded article with good adhesion and a method for producing the resin substrate. Especially, IC, CCD (solid-state image sensor), LD
The present invention relates to a resin package for housing a semiconductor element such as (semiconductor laser) or an electric / electronic element, the resin package having a circuit in which a conductor circuit is provided on the surface of the resin package, and a manufacturing method thereof. The present invention relates to a resin package with a three-dimensional circuit having excellent adhesion between a resin and a resin, and a method for manufacturing the same.

[0002]

BACKGROUND OF THE INVENTION Conventionally, a resin package with a circuit has been widely spread under the name of MID (Molded Interconnect Device). This MID is resin molded 2
A conductive circuit is formed on the surface of a three-dimensional or three-dimensional component. As a resin, polysulfone (PS) is generally used.
Thermoplastic resins such as polyether sulfone (PES), polyether imide (PEI), liquid crystal polymer (LCP), and engineering plastics are used.

Such a resin package with a circuit is mainly formed by the following method. 1) APE (Additive Plate-n-Etch) method A method of forming a circuit by etching after electroless plating on the entire part. 2) A method of forming a circuit by applying a mask to a component molded with a resin containing a MnA method catalyst and performing electroless plating. 3) PSP method (Photo Selective Plating) After applying a photosensitive catalyst to the parts and exposing the circuit part to UV,
A method of forming a circuit by electroless plating. 4) Mold-n-plate method (2-shot method) First circuit shot with resin containing catalyst, second shot with normal resin
A method of forming a circuit by electroless plating after shot.

Of these methods, the PSP method and the two-shot method are often used. With such a manufacturing method, a resin package with a circuit is widely used as a resin package for housing a semiconductor element such as an IC, a CCD (solid-state image pickup element), an LD (semiconductor laser), or an electric / electronic element.

In recent years, in particular, resin packages with a three-dimensional circuit have come to be used for various applications from information-related fields such as personal computers and portable devices to harsh environment fields such as in-vehicle parts for automobiles.

Therefore, a resin package with a three-dimensional circuit has a smaller size, a lower cost, surface mountability, stability at high temperature,
The requirements for chemical resistance and adhesiveness are becoming more and more stringent.

However, the conventional resin package with a three-dimensional circuit has the following problems. (1) Solder crack resistance Since the thermoplastic resin used in the conventional resin package with a circuit is inferior in moisture resistance and is unstable at a high temperature, solder crack is likely to occur.

(2) Miniaturization by fine circuit In the two-shot method as described above, since the circuit pattern is directly formed by the mold, there are many restrictions on the mold design due to molding stability, and the line width is less than 1 mm. It cannot be applied to fine circuits.

On the other hand, the PSP method can be applied to a fine circuit having a line width of less than 1 mm. However, the PSP method requires a very expensive and highly accurate three-dimensional UV exposure mask and a precision fixing jig for accurately fixing the resin component and the mask, and the mask and the jig are individually provided one by one. It is necessary to attach or remove the product, which is an industrially expensive manufacturing process.

(3) Stability at high temperature Since the thermoplastic resin used for the conventional resin package becomes unstable when it approaches the glass transition point Tg, the glass transition temperature (Tg) is about 260 ° C. (solder). A thermoplastic resin above the reflow temperature) is required. However, in the current thermoplastic resins, those having a Tg of about 260 ° C. or higher are expensive.

(4) The PS and PE used in a resin package with a chemical resistant circuit
Thermoplastic resins such as S, PEI, and LCP are chemical solutions (strong acid
The chemical resistance is weak because it is premised that the resin itself is etched by the treatment with a strong alkali.

(5) Adhesive It is necessary to adhere a lid of metal, ceramics, glass, etc. to the encapsulation of the resin package as the semiconductor container to hermetically seal it. However, the resin such as LCP used in the conventional MID has very poor adhesiveness.

(6) Safety and hygiene during manufacturing In the conventional resin package with a circuit, a strong acid such as chromium mixed acid or hydrofluoric acid and a strong alkali such as caustic soda are used for etching and roughening. Since these chemicals are usually used at a high temperature (60 to 80 ° C.), it is feared that the working environment is deteriorated due to evaporation and the safety and hygiene at the manufacturing site is significantly impaired during work such as replacement and replenishment.

Various attempts have been made to solve these problems, but no method for cost reduction and satisfying various characteristics has been proposed yet. On the other hand, cost reduction requirements for semiconductor element packages such as ICs, CCDs, and LDs are becoming more and more strict year by year, and surface mounting of resin packages with three-dimensional circuits, miniaturization by fine circuits, high temperature stability, and durability It was desired to develop a new process to achieve chemical properties, adhesiveness, and safety and hygiene during manufacturing.

[0015]

DISCLOSURE OF THE INVENTION The present invention has been made in view of the above problems, and is a resin which is inexpensive and small, and which is excellent in surface mountability, high temperature stability, chemical resistance, adhesiveness, and safety and hygiene during manufacturing. An object is to provide a substrate and a manufacturing method thereof. More specifically, it is an object of the present invention to provide a resin substrate in which a metal film is formed on a part of the surface with a strong adhesive force and a method for manufacturing the resin substrate.

[0016]

SUMMARY OF THE INVENTION A resin substrate according to the present invention comprises a resin molded body, a rough surface portion formed on at least a part of the surface of the molded body, and a metal film formed on the rough surface portion. Are formed from a plurality of depressions, the depressions being arranged along one or more lines at a substantially constant pitch, and
It is characterized in that the outermost surface layer of the resin substrate between the depressions is removed .

The metal film formed on the rough surface portion is preferably a plating film, and the plating catalyst is present on the rough surface portion. Further, it is preferable that the resin molded body is made of a thermosetting resin.

Further, the shape of the metal film formed on the rough surface portion is preferably a wiring pattern of a conductor circuit. Such a resin substrate can be suitably used for a semiconductor device.

The method for producing a resin substrate according to the present invention, at least a portion of the surface of the resin molded body, by sweeping a laser beam, Ri Do because almost recesses multiple of a constant pitch in the sweep direction of the laser beam, The outermost surface layer of the resin substrate between the depressions is removed.
It is characterized in that the removed rough surface portion is formed and a metal film is formed on the rough surface portion.

[0020]

The shape of the metal film formed on the rough surface portion is preferably a wiring pattern of a conductor circuit. Further, it is preferable that the resin molded body is made of a thermosetting resin.

The resin substrate thus obtained is suitable for a semiconductor device.

[0023]

DETAILED DESCRIPTION OF THE INVENTION The present invention will be specifically described below. Resin Substrate First, the resin substrate according to the present invention will be described.

The resin substrate according to the present invention comprises a resin molded body,
It comprises a rough surface portion formed on at least a part of the surface of the molded body, and a metal film formed on the rough surface portion. Such a resin molded body is not particularly limited, and may be a box-shaped resin package or a flat plate resin molded body.

The resin forming the resin molding is not particularly limited, and any heat-resistant resin may be used. Specifically, thermosetting resins such as epoxy resin, polyimide resin, phenol resin, unsaturated polyester resin, and silicone resin, and thermoplastic resins represented by engineering plastics such as polyphenylene oxide (PPO) and polyphenylene sulfide (PPS). Is mentioned.

Of these, thermosetting resins are preferable from the viewpoint of chemical stability, and epoxy resins are particularly preferable. Epoxy resin, ortho-cresol type, biphenyl type,
Examples thereof include naphthalene type epoxy resins.

If desired, the heat resistant resin may contain an inorganic filler. Specific examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, alumina powder, silica powder, boron nitrite powder, titanium oxide powder, silicon carbide powder, glass fiber and alumina fiber. Among these, those which are easily dissolved by an acid or an alkali are preferable, and for example, aluminum hydroxide, magnesium hydroxide and calcium carbonate are preferably used.

In addition to the inorganic filler, if necessary, a curing agent, a curing accelerator such as an imidazole, a urea derivative and an amine compound, a flame retardant, a coupling agent, a wax and the like are added to the heat resistant resin. Agents may be included.

The resin molded product can be obtained by molding the above heat-resistant resin composition into a shape such as a box shape or a flat plate shape by a molding method such as injection molding or extrusion molding.

In the resin substrate according to the present invention, a rough surface portion is formed on at least a part of the surface of such a resin molded body. The rough surface portion is formed of a plurality of depressions, and the depressions are formed along one or more lines and arranged at a substantially constant pitch. This line is a locus swept by the laser and may have a shape that covers the rough surface portion. Further, this line may be a straight line and arranged in parallel to cover the rough surface portion, may be a broken line or a curved line, and is appropriately selected depending on the shape of the rough surface portion to be formed.

The pitch is equal to the pulse pitch obtained by dividing the scanning speed of the laser light on the resin surface by the laser frequency (Q switch frequency), and the upper limit of the pitch is such a pitch length that the outermost surface layer of the resin substrate does not remain. I wish I had it. If the pulse pitch is significantly larger than that of the spot system of laser light, there is a place where the laser light is not sufficiently irradiated between the depressions and the outermost surface layer of the resin substrate is not removed, and the adhesion with the metal film deteriorates. I have something to do. The lower limit of the pitch is not particularly limited and is preferably 0.01 mm or more from the viewpoint of operability. It is desirable that the outermost surface layer of the resin substrate be removed even between the depressions.

The spot diameter of the laser beam varies depending on the optical system used, but is within a practical range of 0.01 to 1 m.
It is desirable that it is m. Within such a range, the outermost surface layer can be removed even between the recesses by setting appropriate laser conditions.

The width and depth of the recess thus formed depend on the laser output, the spot diameter, the scanning speed, etc., but the maximum width of the recess is 0.01 to 1 mm, and the maximum depth of the recess is. It is desirable that it is 0.01 to 1 mm.

Examples of the metal film include copper, silver, gold, platinum, palladium, nickel and alloys thereof. Such a metal film may be a multilayer film of a plurality of metals.

The thickness of the metal film is 0.1-100 μm.
m, preferably 1 to 10 μm. Such a metal film is preferably a plating film, and a plating catalyst is preferably present on the rough surface portion of the resin substrate.

As the plating catalyst, an organic palladium compound is used.
And organic platinum compounds. Of these, organic
Palladium compounds are preferably used. Like this
The catalyst is palladium chloride (PdCl₂), Jiang Min No.
Monopalladium chloride (Pd (NH₃) ₂Cl₂), Tetraammine
Palladium oxalate (Pd (NH₃)_FourC₂O_Four), Palladium sulfate
(PdSO_Four) And other palladium compounds, or platinum compounds
Obtained in a catalyst bath containing

The resin substrate in which the metal film has a wiring pattern of a conductor circuit can be suitably used as a package with a conductor circuit of a semiconductor device. Method for manufacturing resin substrate The method for manufacturing a resin substrate according to the present invention is (i) at least a part of the surface of the resin molded body is swept and irradiated with laser light to form a rough surface portion composed of a plurality of depressions at a specific pitch. Then, (ii) a metal film is formed on the rough surface portion.

Next, the method for manufacturing the resin substrate according to the present invention will be specifically described. The same resin substrate and metal film as those described above are used. [(i) Formation of Rough Surface Portion] First, in the present invention, as a base treatment for forming a metal film, laser light is sweep-irradiated to form a plurality of depressions along the swept trajectory on the surface of the resin molded body. .
This swept range becomes the rough surface portion.

The sweep irradiation of laser light is performed as shown in FIG. The laser light is pulsed in the beam scanning direction (X) at a specific cycle and moves in the X direction at a specific pitch. After scanning a predetermined distance in the X direction, Y
The same laser light irradiation is performed in the X direction with a shift of one pitch in the direction. Such an operation is repeated to form a predetermined pattern.

The irradiation pitch between the pulses and the interval between the adjacent scanning lines may be the irradiation pitch length and the interval between the scanning lines such that the outermost surface layer of the resin substrate does not remain between the depressions. That is, if the irradiation pitch or the scanning line interval is significantly larger than the spot diameter of the laser light, there is a portion between the recesses where the outermost surface layer of the resin substrate where the laser light is not sufficiently irradiated is not removed, and there is a metal film. The adhesiveness of is deteriorated. Therefore, it is desirable that the outermost surface layer of the resin substrate between the depressions be removed. The lower limit of the irradiation pitch between pulses and the interval between adjacent scanning lines is not particularly limited, but is preferably 0.01 mm or more from the viewpoint of operability.

Although the spot diameter of the laser beam differs depending on the optical system used, it is preferably 0.01 to 1 mm in a practical range. In such a range, the outermost surface layer can be removed even between the depressions by setting appropriate laser conditions.

The laser scanning pitch is 0.01 to 1 mm.
Is desirable. The maximum width and the maximum depth of the recess thus formed depend on the laser output, the spot diameter, the scanning speed, etc., but practically the maximum width of the recess is 0.01 to 1 mm, Maximum depth 0.01 ~
It is preferably 1 mm.

At this time, the Q switch frequency is 1 to 10
0 kHz, preferably 5 to 50 kHz, scanning speed is 5
00-3000mm / sec, preferably 800-2000mm
/ sec is desirable.

In the method for producing a resin substrate according to the present invention, a chemical solution treatment is performed in which the chemical solution disappearance particles are mixed in the resin molded body in advance, and after the laser beam is swept and irradiated, the chemical solution disappearance particles exposed in the irradiated portion are eliminated. May be given.

The chemical solution-dissipating particles are organic solvent, water, acid solution,
Particles that dissolve and disappear in a chemical solution such as an alkaline solution, and specifically include aluminum hydroxide, magnesium hydroxide, calcium carbonate, and the like.

When laser light is irradiated to the portion of the resin substrate to be roughened, in which the chemical liquid-dissipated particles are mixed, the surface layer of the resin substrate in the irradiation portion disappears, and the chemical liquid-dissipated particles are exposed.

When the chemical-dissipated particles are eliminated by the chemical treatment, fine recesses are formed in the laser-irradiated portion, and the surface can be roughened. The laser light used in the present invention is preferably a laser light from a Q-switch type Nd: YAG laser which emits a laser light of 1.06 μm. The sweep irradiation of laser light is performed with a galvano mirror and f-
Beam scanning on a two-dimensional plane by the configuration of the θ lens is desirable. The depth of focus at this time is preferably 2 to 6 mm.

In the present invention, it is desirable to adopt a galvano-mirror scanning method using an f-θ lens system as a beam positioning method at the time of sweep irradiation of laser light. The galvano-mirror scanning method is a combination of a pair of galvano-mirrors consisting of an X-axis scanner and a Y-axis scanner and an f-θ lens, and an arbitrary size up to the outer diameter circle of the f-θ lens on the same plane. Is a beam scanning method that can focus on points
It is generally used as a laser marker for directly drawing characters and the like.

By using such a galvano-mirror scanning method, it is possible to roughen only a necessary fine circuit portion with periodic roughness. In the present invention, even a three-dimensional molded body such as a box-shaped resin molded body can be irradiated with laser. Such a box-shaped resin molding is shown in FIG.
As shown in, the angle θ between the plane 2 and the side surface 3 is 75 °.
The following is desirable. With such a box-shaped resin molded product, it is possible to perform beam scanning in a direction perpendicular to the line direction of the three-dimensional circuit 4, and the beam depth of focus is approximately 5 degrees.
It is possible to process the side surface (tapered portion) 3 having a height of twice, preferably three times.

Even if a hole connecting the front surface and the back surface of the molded body is formed like a through hole, the inner wall of the through hole can be irradiated with laser. In this case, as shown in FIG. 3, it is possible to perform through irradiation by multiple reflection by making the hole diameter of the through hole slightly larger than the beam diameter. As a result, the inner wall of the through hole can be roughened.

[(Ii) Formation of Metal Film] Next, in the present invention, a metal film is formed on the rough surface portion formed as described above.
In order to form a metal film, first, a plating catalyst is applied to the rough surface portion.

The plating catalyst is applied by adding palladium chloride (Pd
Cl ₂ ), diammine primary palladium chloride (Pd (NH ₃ ) ₂ C
l ₂ ), tetraammine palladium oxalate (Pd (NH ₃ ) ₄ C ₂
O ₄ ), a palladium compound such as palladium sulfate (PdSO ₄ ), or a method of performing electroless treatment in a catalyst bath containing a platinum compound or the like. At this time, the plating catalyst is supported only on the rough surface portion. When the rough surface portion forms a circuit pattern, the plating catalyst is carried on the circuit pattern.

In this way, a metal film is formed by plating on the rough surface portion provided with the plating catalyst. The plating of the metal film may be electroless plating alone or electrolytic plating alone, but it is preferable to perform the plating in two steps of electroless plating and electrolytic plating.

Electroless Plating Electroless plating is a method of reducing and depositing metal ions in a solution with a reducing agent.

As the reducing agent, hypophosphite, borohydride compound, hydrated hydrazine, formaldehyde, hypophosphite, N, N-diethylglycine, hydrazine sulfate, ascorbic acid and the like are used.

In such electroless plating, first, a salt of a metal to be deposited is dissolved in a solvent such as water and the reducing agent is added to prepare a plating bath. The concentration of the metal salt may be a commonly used concentration, for example, 0.001 to
It may be 0.5 mol / liter.

At this time, if necessary, a pH adjusting agent, a buffering agent, a complexing agent, an accelerator, a stabilizer, an improving agent, etc. may be added. As the pH adjuster, basic compounds such as sodium hydroxide and ammonia, inorganic acids such as sulfuric acid and hydrochloric acid,
Examples thereof include organic acids such as acetic acid and succinic acid.

As the buffer, phosphate, citrate,
Examples include tartrate. As the complexing agent, alkali metal salts of organic acids such as acetic acid, glycolic acid, citric acid, tartaric acid, thioglycolic acid, ammonia, hydrazine,
Triethanolamine, ethylenediamine, glycine,
Examples include o-aminophenol and EDTA.

Examples of the accelerator include succinic acid and the like. Examples of the stabilizer include thiourea, metal cyanide, acetylacetone, ethyloxanthic acid and the like.

Examples of the improving agent include NaCN and KCN. The resin molding having a rough surface portion provided with a plating catalyst is immersed in the plating bath thus prepared.
The immersion time and the immersion temperature are appropriately selected depending on the type of metal to be plated and the metal ion concentration in the plating bath.

The electroless-plated resin molding is washed with water.
After drying, it is electroplated if necessary. Electrolytic Plating Electrolytic plating is performed under conditions suitable for the purpose among commonly used methods. The part to be electroplated is
Since it is a roughened area, the current density may be calculated by its area.

According to the manufacturing method of the present invention as described above, a resin substrate on which an arbitrary pattern is drawn can be manufactured. When the shape of the metal film is a wiring pattern of a conductor circuit, the obtained resin substrate can be suitably used as a package with a conductor circuit of a semiconductor device.

Further, the manufacturing method according to the present invention is not limited to a circuit board, and is also effective when a metal film having good adhesion is formed on the surface of a resin structure. Semiconductor Device Next, a semiconductor device using the resin substrate according to the present invention will be described.

FIG. 4 is a sectional view of a surface mount semiconductor device using a resin substrate according to the present invention. The semiconductor device 10 is
Box-type resin package 11, semiconductor element 12, conductor circuit 1
3 and a lid 14. A concave portion 15 for accommodating the semiconductor element 12 is provided in the center of the box-type package 11. The semiconductor element 12 is fixed to the concave portion 15 with an adhesive 16, and the semiconductor element 12 and the conductor circuit 13 are connected to each other. Is the bonding wire 1
It is electrically connected by 7.

Further, the upper end surface 11a of the box-type package 11
The lid 14 is adhered and fixed to the box package 11 by an adhesive agent 18.
1b is closed. In the conductor circuit of FIG. 4, the planar circuit 13a and the three-dimensional circuit 13b electrically connect the circuits on the front and back surfaces of the resin package.

An epoxy resin or a modified epoxy resin is usually used as the adhesive 16 and the adhesive 18. FIG. 5 is a cross-sectional view of another surface mount type semiconductor device using the resin substrate according to the present invention. The semiconductor device 29 includes a box-shaped resin package 21, a semiconductor element 22, a conductor circuit 23,
And a lid 24. A recess 25 for accommodating the semiconductor element 22 is provided in the center of the box-shaped package 21, and the semiconductor element 22 is accommodated in the recess 25.
Are electrically and mechanically connected by the bumps 27 provided on the semiconductor element 22 or the conductor circuit 23 using the bare chip mounting technique. In addition, box type package 2
The lid 24 is bonded and fixed to the upper end surface 21a of the box 1 by the adhesive 28, so that the box-type package 2
The upper opening 21b of No. 1 is closed. Further, if necessary, the stress buffer resin 26 may be permeated and cured between the semiconductor element 22, the conductor circuit 23 and the box package 21.

The adhesive 28 may be the same as the adhesive 16 and the adhesive 18. Examples of the stress buffering resin 26 include thermosetting or ultraviolet curable epoxy resin known as Underfill or Encapsulant material.

When a large number of semiconductor devices as shown in FIGS. 4 and 5 are manufactured, the box-shaped package mounting plate 31 on which the box-shaped resin package 30 is simultaneously molded as shown in FIG. 6 is molded by injection molding or extrusion molding. . The through hole 32 may be provided as a three-dimensional circuit that connects the front surface and the back surface of the molded body. By making the diameter of the through hole 32 a little larger than the beam diameter, it is possible to perform through irradiation by multiple reflection. After forming the conductor circuits on the front surface, the back surface, and the through holes of each box-shaped package, each box-shaped package is cut into individual pieces by the cutting portion 33 so that the through holes 32 are not broken. A high-speed cutting machine such as a diamond cutter or a thin grindstone is used for cutting. After cutting
When adjusting the outer shape, grinding or the like may be performed.

[0069]

The resin substrate according to the present invention has high temperature stability,
Excellent resistance to solder cracks and chemicals. Further, according to the manufacturing method of the present invention, it is possible to obtain a resin substrate having excellent adhesion between a metal film such as a conductor circuit and a substrate, and it is possible to directly draw a fine circuit, and the conventional chemical solution is used. It is possible to provide a dry process which is extremely good in terms of safety and hygiene, and which has no environmental deterioration at the time of manufacture such as treatment and no dangerous work.

[0070]

EXAMPLES The present invention will be described below based on examples, but the present invention is not limited to these examples.

[0071]

Example 1 Epoxy resin (Mitsui Petrochemical Industry Co., Ltd.)
Manufactured: Epoxy resin EPOX ^™ ) on a horizontal surface of a flat plate molded body, in a rectangular shape of 10 × 50 mm as shown in FIG.
A rough surface portion was created by irradiating laser light under the following conditions using a W output Q-switch type YAG laser irradiator (spot diameter of about 90 μm).

Pulse pitch: 0.075 mm Q switch frequency: 20 kHz Beam scanning speed: 1500 mm / sec Aperture opening: Fully open Beam focus position: Just focus Laser output: 2.6W (100mm below processing point)
Measurement value) Next, the test substrate on which the rough surface portion was created was used as the first diamine
Umium chloride Pd (NH₃)₂Cl ₂In a plating bath consisting of
Immerse for 2 hours to form an organopalladium compound on the rough surface
The plating catalyst was provided by forming.

Then, the test substrate was immersed in a plating bath made of copper sulfate for 2 hours at 71 ° C., and electroless copper plating was performed until the plating thickness became about 0.5 μm. Then, the test substrate is washed with water and dried, and then placed in a plating bath made of copper sulfate at 30 ° C.
It was dipped at 8.6 A / dm ² for 30 minutes to carry out electrolytic copper plating (plating thickness: about 15 μm).

One end side of the plated portion on the obtained test substrate was peeled off over the entire width (10 mm) over a length of about 10 mm to obtain a peel strength measurement sample. Next, a tensile tester (Tensilon UCT-5T) was equipped with a load cell of 10 kgf at maximum, and a peel strength test of the conductor was conducted.

The results are shown in Table 1.

[0076]

[Comparative Example 1] In Example 1, the rough surface portion was air blasted by a sandblasting device with an alumina powder having an average particle diameter of 14 μm from a nozzle having a diameter of 0 mm under an air pressure of 5 kg / cm 2 G and a feed rate of 18 mm / sec. A test substrate was prepared and a peel strength test was conducted in the same manner as in Example 1 except that the above was prepared.

The results are shown in Table 1.

[0078]

[Comparative Example 2] In Example 1, the rough surface portion was 185 nm.
UV light of a transmission tube type low pressure mercury lamp (U-shaped tube, lamp output 40W) having a peak wavelength in the ambient temperature of 65 ° C,
A test substrate was prepared and a peel strength test was performed in the same manner as in Example 1 except that the lamp-sample interval was 2.30 mm and the irradiation time was 240 seconds.

The results are shown in Table 1.

[0080]

[Table 1]

[0081]

Example 2 A test substrate was prepared in the same manner as in Example 1 except that the laser light irradiation conditions were changed as follows, and the peel strength test evaluation and the remaining resin surface were observed.

Pulse pitch: 0.10 mm Q-switch frequency: 15 kHz Beam scanning speed: 1500 mm / sec Aperture opening: Fully open beam focus position: Just focus laser output: 2.6 W (measured value 100 mm below the processing point) Results Is shown in Table 2.

[0083]

[Example 3] A test substrate was prepared in the same manner as in Example 1 except that the laser light irradiation conditions were changed as follows, and the peel strength test evaluation and the remaining resin surface were observed.

Pulse pitch: 0.15 mm Q-switch frequency: 10 kHz Beam scanning speed: 1500 mm / sec Aperture opening: Fully open beam focus position: Just focus laser output: 2.6 W (measured value 100 mm below the processing point) Result Is shown in Table 2.

[0085]

Example 4 A test substrate was prepared in the same manner as in Example 1 except that the laser light irradiation conditions were changed as follows, and the peel strength test evaluation and the remaining resin surface were observed.

Pulse pitch: 0.20 mm Q switch frequency: 7.5 kHz Beam scanning speed: 1500 mm / sec Aperture opening: Fully open beam focus position: Just focus laser output: 2.6 W (measured value 100 mm below the processing point ) The results are shown in Table 2.

[0087]

Comparative Example 3 A test substrate was prepared in the same manner as in Example 1 except that the laser light irradiation conditions were changed as follows, and the peel strength test evaluation and the remaining resin surface were observed.

Pulse pitch: 0.25 mm Q switch frequency: 6 kHz Beam scanning speed: 1500 mm / sec Aperture opening: Fully open beam focus position: Just focus laser output: 2.6 W (measured value 100 mm below the processing point) Result Is shown in Table 2.

[0089]

[Table 2]

[0090]

[Comparative Example 4] A sample in which a step having a side surface of 90 ° with respect to the plane of the substrate was provided on the test substrate at the time of laser irradiation in Example 1 was treated under the conditions of Example 1 to obtain 90 °. The peel strength test evaluation of the side surface portion and the rest of the resin surface were observed.

The results are shown in Table 3.

[0092]

[Comparative Example 5] A test substrate was prepared in the same manner as in Example 1 except that the test substrate was tilted by 80 ° during irradiation with laser light in Example 1, and the peel strength test evaluation and the remaining resin surface were observed. did.

The results are shown in Table 3.

[0094]

[Example 5] A test substrate was prepared in the same manner as in Example 1 except that the test substrate was tilted at 75 ° during irradiation with laser light in Example 1, and the peel strength test evaluation and the remaining resin surface were observed. did.

The results are shown in Table 3.

[0096]

[Example 6] A test substrate was prepared in the same manner as in Example 1 except that the test substrate was tilted by 70 ° during the laser irradiation, and the peel strength test evaluation and the remaining resin surface were observed. did.

The results are shown in Table 3.

[0098]

Example 7 A test substrate was prepared in the same manner as in Example 1 except that the test substrate was tilted at 60 ° during irradiation with laser light in Example 1, and the peel strength test evaluation and the remaining resin surface were observed. did.

The results are shown in Table 3.

[0100]

[Table 3]

[0101]

[Embodiment 8] The resin molded body used in Embodiment 1 has a diameter of about 1
A through hole having a thickness of 20 μm was provided, and the inner wall of the through hole was irradiated with laser under the following conditions.

Laser irradiator: Q-switch type YAG
Laser (spot diameter about 90 μm) Q switch frequency: 20 kHz Beam irradiation time: 0.1 seconds Aperture opening: Fully open beam focus position: Just focus laser output: 2.6 W (measured value 100 mm below the processing point) Laser irradiation Then, after conducting conductor plating in the same manner as in Example 1, a Ni rod (0.08 mm) was soldered with eutectic solder to prepare an adhesion strength measurement sample. The pull-out test of the Ni rod was performed.

The results are shown in Table 4.

[0104]

Comparative Example 6 A sample was prepared and evaluated in the same manner as in Example 8 except that the inner wall of the through hole was not irradiated with laser.

[0105]

[Table 4]

[Brief description of drawings]

FIG. 1 is a principle view showing laser light irradiation in a method for manufacturing a resin substrate according to the present invention.

FIG. 2 is a schematic view of a wall surface of a box-shaped resin package showing a difference in beam scanning direction between a three-dimensional circuit and a planar circuit.

FIG. 3 is a principle diagram showing irradiation of a laser on the entire inner wall surface of a through hole.

FIG. 4 is a sectional view showing a semiconductor device using a resin substrate according to the present invention.

FIG. 5 is a sectional view showing another semiconductor device in which the resin substrate according to the present invention is used.

FIG. 6 is a schematic cross-sectional view of a semiconductor device when a resin substrate according to the present invention is produced at one time.

FIG. 7 shows a schematic view of a peel strength test.

[Explanation of symbols]

1 box type resin package 2 plane 3 sides 4 three-dimensional circuit 10 Semiconductor device 11 Box type resin package (package body) 11a Box type resin package upper end surface 11b Box-shaped resin package upper opening 12 Semiconductor element 13 conductor circuit 13a Planar circuit (within conductor circuit) 13b Three-dimensional circuit (within conductor circuit) 14 lid 15 Box-shaped resin package recess 16 Adhesive (for semiconductor adhesion) 17 Bonding wire 18 Adhesive (for lid adhesion) 20 Semiconductor device 21 Box type resin package (package body) 21a Upper end surface of box-type resin package 21b Box-shaped resin package upper opening 22 Semiconductor element 23 Conductor circuit 24 lid 25 Box-shaped resin package recess 26 Stress buffering resin 27 bumps 28 Adhesive (for lid adhesion) 30 box type resin package 31 Multiple box-type resin package mounting boards 32 through holes 33 cutting part

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁷ Identification code FI H05K 3/38 H05K 3/38 D H01L 23/12 L (56) Reference JP-A-7-116870 (JP, A) JP Flat 8-290478 (JP, A) JP 5-38876 (JP, A) JP 6-196840 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H05K 1 / 02

Claims (11)

(57) [Claims] 1. A resin molded body, a rough surface portion formed on at least a part of the surface of the molded body, and a metal film formed on the rough surface portion, wherein the rough surface portion is formed of a plurality of depressions. The resin substrate is characterized in that the depressions are arranged at a substantially constant pitch along one or more lines, and the outermost surface layer of the resin substrate between the depressions is removed. 2. The resin substrate according to claim 1, wherein the metal film formed on the rough surface portion is a plating film, and the plating catalyst is present on the rough surface portion. 3. The resin substrate according to claim 1, wherein the resin molding is made of a thermosetting resin. 4. The resin substrate according to claim 1, wherein the shape of the metal film formed on the rough surface portion is a wiring pattern of a conductor circuit. 5. The resin molded body is a box-shaped resin molded body,
The rough surface portion is formed on the plane and the side surface of the box-shaped molded product by laser sweep irradiation, the angle θ formed by the plane and the side surface is 75 ° or less, and the side surface has a focal depth of the laser beam of 5 °. 2. The height is up to twice that of claim 1.
5. The resin substrate according to any one of to 4. 6. A semiconductor device using the resin substrate according to claim 1. 7. A resin molding is swept and irradiated with at least a part of the surface thereof to form a plurality of recesses having a substantially constant pitch in the sweeping direction of the laser light. A method for producing a resin substrate, comprising forming a rough surface portion from which a surface layer has been removed, and forming a metal film on the rough surface portion. 8. The metal film formed on the rough surface portion has a wiring pattern of a conductor circuit.
7. The method for manufacturing a resin substrate according to 7 . 9. The method for producing a resin substrate according to claim 7, wherein the resin molded body is made of a thermosetting resin. 10. The resin molded body is a box-shaped resin molded body, the rough surface portion is formed on the plane and side surfaces of the box-shaped molded body, and an angle θ between the plane and the side surface is 75 ° or less. , and the and method for producing a resin substrate according to any one of claims 7-9 side surface is characterized by a height of up to 5 times the depth of focus of the laser beam. 11. A semiconductor device using a resin substrate obtained by the manufacturing method according to claim 7 .