JP3453238B2 - Nitride semiconductor light emitting device and method of manufacturing the same - Google Patents
Nitride semiconductor light emitting device and method of manufacturing the sameInfo
- Publication number
- JP3453238B2 JP3453238B2 JP01050796A JP1050796A JP3453238B2 JP 3453238 B2 JP3453238 B2 JP 3453238B2 JP 01050796 A JP01050796 A JP 01050796A JP 1050796 A JP1050796 A JP 1050796A JP 3453238 B2 JP3453238 B2 JP 3453238B2
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- JP
- Japan
- Prior art keywords
- nitride semiconductor
- semiconductor layer
- type nitride
- light emitting
- emitting device
- Prior art date
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、発光ダイオード、レー
ザダイオード等に使用される窒化ガリウム系化合物半導
体（ＩｎｘＡｌｙＧａ１−ｘ−ｙＮ；０≦ｘ、０≦ｙ、
ｘ＋ｙ≦１）が積層されてなる窒化物半導体発光素子の
構造に関する。The present invention relates to a light emitting diode, a gallium nitride-based compound is used in a laser diode or a semiconductor (In x Al y Ga 1- x-y N; 0 ≦ x, 0 ≦ y,
The present invention relates to a structure of a nitride semiconductor light emitting device in which x + y ≦ 1) are laminated.
【０００２】[0002]
【従来の技術】窒化物半導体よりなる発光素子は、基本
的に、サファイア、スピネル等の絶縁性基板上にｎ型窒
化物半導体層（以下、ｎ層という。）と、ｐ型窒化物半
導体層（以下、ｐ層という。）とが積層された構造を有
している。このような半導体発光素子には、同一面側に
正負一対の電極が形成されるが、ｎ層に電極を形成する
には、ｐ層を部分的にエッチングして取り除きｎ層を露
出させることにより形成していた。このようにして得ら
れた窒化物半導体発光素子は、同一面側に正負一対の電
極が隣接して形成されたいわゆるフリップチップ形式の
ため、正、負の電極間で短絡が生じる場合がある。例え
ば、ｎ層の電極にワイヤーボンディングする際、ボール
が電極からずれてｐ層と接触すると電気的に短絡してし
まうという問題がある。2. Description of the Related Art A light emitting device made of a nitride semiconductor is basically composed of an n-type nitride semiconductor layer (hereinafter referred to as n layer) and a p-type nitride semiconductor layer on an insulating substrate such as sapphire or spinel. (Hereinafter, referred to as p layer). In such a semiconductor light emitting device, a pair of positive and negative electrodes are formed on the same surface side. To form an electrode on the n layer, the p layer is partially etched to expose the n layer. Had formed. The thus obtained nitride semiconductor light emitting device is a so-called flip-chip type in which a pair of positive and negative electrodes are formed adjacent to each other on the same surface side, and thus a short circuit may occur between the positive and negative electrodes. For example, when wire bonding is performed on the n-layer electrode, there is a problem in that if the ball shifts from the electrode and comes into contact with the p-layer, an electrical short circuit occurs.
【０００３】このようなことから、短絡が生じていた
正、負の電極間に絶縁層が形成された構造を有する窒化
物半導体発光素子が公表された（特開平７−９４７８３
号公報）。Under these circumstances, a nitride semiconductor light emitting device having a structure in which an insulating layer is formed between positive and negative electrodes, which have been short-circuited, has been disclosed (Japanese Patent Laid-Open No. 7-94783).
Issue).
【０００４】[0004]
【発明が解決しようとする課題】図３は、正、負の電極
間に絶縁層が形成された従来の窒化物半導体発光素子
を、基板側を発光観測面として配線基板上に実装した場
合の模式断面図である。従来の窒化物半導体発光素子
は、ウェーハからチップ状に切り出された個々の発光素
子の端面は、サファイア基板２１とｎ層２２、またはサ
ファイア基板２１とｎ層２２及びｐ層２３が露出された
構造となる。窒化物半導体発光素子をフリップチップボ
ンディングする場合、配線基板３０上等に半導体層上に
形成された正、負の両電極２４、２５と、配線基板３０
上に設けられた導電部３１とを導電性接着剤２７を介し
て接続する。図のように従来の窒化物半導体を、配線基
板３０上に実装した場合、電極２４、２５と導電部３１
とを接着するのに、導電性接着剤２７を使用すると、導
電性接着剤２７の量が多い場合、発光素子端面にまで回
り込み付着し、発光素子端面の露出されたｎ層２２とｐ
層２３、またはｎ層２２とｐ電極２５との界面で短絡が
生じるという問題があった。FIG. 3 shows a case where a conventional nitride semiconductor light emitting device in which an insulating layer is formed between positive and negative electrodes is mounted on a wiring substrate with the substrate side as a light emission observation surface. It is a schematic cross section. The conventional nitride semiconductor light emitting device has a structure in which the sapphire substrate 21 and the n layer 22, or the sapphire substrate 21, the n layer 22 and the p layer 23 are exposed at the end face of each light emitting device cut out from the wafer in a chip shape. Becomes When flip-chip bonding of the nitride semiconductor light emitting device, formed in the wiring board 30 choice in the semiconductor layer positive and negative two electrodes 24 and 25, the wiring board 30
The conductive portion 31 provided above is connected via a conductive adhesive 27 . When the conventional nitride semiconductor is mounted on the wiring board 30 as shown in the figure, the electrodes 24 and 25 and the conductive portion 31 are formed.
When the conductive adhesive 27 is used to bond the and n, when the amount of the conductive adhesive 27 is large, the conductive adhesive 27 wraps around to the end face of the light emitting element and adheres to the n layer 22 and the p layer exposed on the end face of the light emitting element.
There is a problem that a short circuit occurs at the interface between the layer 23 or the n layer 22 and the p electrode 25.
【０００５】また、窒化物半導体発光素子は、基板側ま
たは電極側の発光素子表面から発光が取り出されるが、
発光強度の向上を図るため、発光素子端面からの発光も
有効利用される。しかしながら従来の構造では、ウェー
ハから個々の発光素子を切り出した場合、発光素子端面
は平滑でなく凹凸のある形状となるため、発光素子端面
からの発光の光学特性にばらつきが生じるという問題も
あった。In the nitride semiconductor light emitting device, light is taken out from the surface of the light emitting device on the substrate side or the electrode side.
In order to improve the light emission intensity, light emission from the end face of the light emitting element is also effectively used. However, in the conventional structure, when the individual light emitting elements are cut out from the wafer, the end surface of the light emitting element is not smooth but has irregularities, so that there is a problem that the optical characteristics of light emitted from the end surface of the light emitting element vary. .
【０００６】従って本発明は上記問題を解決するために
成されたものであり、その目的とするところは、発光素
子端面における、ｎ層とｐ層、およびｎ層とｐ電極との
界面の短絡を防止し、さらに発光素子端面からの発光の
光学特性のばらつきをなくして、信頼性の向上した窒化
物半導体発光素子を提供することにある。Therefore, the present invention has been made to solve the above problems, and an object thereof is to short-circuit the interface between the n layer and the p layer and the interface between the n layer and the p electrode at the end face of the light emitting device. Another object of the present invention is to provide a nitride semiconductor light emitting device with improved reliability by preventing the above-mentioned problems and eliminating the variation in optical characteristics of light emitted from the end face of the light emitting device.
【０００７】[0007]
【課題を解決するための手段】本発明の窒化物半導体発
光素子は、絶縁性基板と、負電極が形成されるｎ型窒化
物半導体層と、正電極が形成されるｐ型窒化物半導体層
とが同一面側に露出されてなる窒化物半導体発光素子に
おいて、前記窒化物半導体発光素子は更に前記絶縁性基
板の表面、前記ｎ型窒化物半導体層の表面、及び前記ｐ
型窒化物半導体層の表面には、前記発光素子の端面にお
いて前記ｎ型窒化物半導体層の端面から電極側の表面に
かけて連続した絶縁性被膜が形成されていることを特徴
とする。また、本発明の他の窒化物半導体発光素子は、
絶縁性基板と、前記絶縁性基板上に形成されるｎ型窒化
物半導体層と、前記ｎ型窒化物半導体層上に形成される
負電極と、前記ｎ型窒化物半導体層上であって前記負電
極が形成されていない部位に形成されるｐ型窒化物半導
体層と、前記ｐ型窒化物半導体層上に形成される正電極
とを備えており、前記負電極および正電極を同一面側に
形成して導電性接着剤を介して外部と接続する窒化物半
導体発光素子において、前記絶縁性基板上の前記同一面
側に前記ｎ型窒化物半導体層と前記負電極と前記ｐ型窒
化物半導体層と前記正電極とが形成されており、前記発
光素子の端面において前記ｎ型窒化物半導体層の端面を
被覆するように、絶縁性被膜が前記同一面側において前
記発 光素子の端面で前記絶縁性基板と接するように前記
ｎ型窒化物半導体層の端面から前記ｐ型窒化物半導体層
の端面、前記正電極および負電極の表面にかけて、必要
な露出部分を除いて連続して形成されていることを特徴
とする。さらに、本発明の他の窒化物半導体発光素子
は、絶縁性基板と、前記絶縁性基板上に形成されるｎ型
窒化物半導体層と、前記ｎ型窒化物半導体層上に形成さ
れる負電極と、前記ｎ型窒化物半導体層上であって前記
負電極が形成されていない部位に形成されるｐ型窒化物
半導体層と、前記ｐ型窒化物半導体層上に形成される正
電極とを備えており、前記負電極および正電極を同一面
側に形成して導電性接着剤を介して外部と接続する窒化
物半導体発光素子において、前記絶縁性基板上の前記同
一面側に前記ｎ型窒化物半導体層と前記負電極と前記ｐ
型窒化物半導体層と前記正電極とが形成されており、前
記発光素子の端面において前記ｎ型窒化物半導体層の端
面を被覆するように、着色されている絶縁性被膜が前記
同一面側において前記発光素子の端面で前記絶縁性基板
と接するように前記ｎ型窒化物半導体層の端面から前記
ｐ型窒化物半導体層の端面、前記正電極および負電極の
表面にかけて、必要な露出部分を除いて連続して形成さ
れていることを特徴とする。さらにまた、本発明の窒化
物半導体発光素子の製造方法は、絶縁性基板と、前記絶
縁性基板上に形成されるｎ型窒化物半導体層と、前記ｎ
型窒化物半導体層上に形成される負電極と、前記ｎ型窒
化物半導体層上であって前記負電極が形成されていない
部位に形成されるｐ型窒化物半導体層と、前記ｐ型窒化
物半導体層上に形成される正電極とを備えており、前記
負電極および正電極を同一面側に形成して導電性接着剤
を介して外部と接続する窒化物半導体発光素子の製造方
法において、前記絶縁性基板上の前記同一面側に前記ｎ
型窒化物半導体層と前記ｐ型窒化物半導体層とを順に成
長させる工程と、前記ｐ型窒化物半導体層および前記ｎ
型窒化物半導体層の一部をエッチングにより除去して、
前記絶縁性基板と、前記ｎ型窒化物半導体層と、前記ｐ
型窒化物半導体層とを前記同一面側に露出させる工程
と、前記ｎ型窒化物半導体層表面に前記負電極、前記ｐ
型窒化物半導体層の表面に前記正電極を各々形成する工
程と、前記発光素子の端面において前記ｎ型窒化物半導
体層の端面および前記ｐ型窒化物半導体層の端面を被覆
することで前 記発光素子端面で露出された前記ｎ型窒化
物半導体層と前記ｐ型窒化物半導体層、または前記ｎ型
窒化物半導体層と前記正電極との短絡を防止するよう
に、前記同一面側において前記発光素子の端面で前記絶
縁性基板と接するように絶縁性被膜を前記ｎ型窒化物半
導体層の端面から前記ｐ型窒化物半導体層の端面、前記
正電極および負電極の表面にかけて、必要な露出部分を
除いて連続して形成する工程とを備えることを特徴とす
る。さらに、本発明の他の窒化物半導体発光素子は、絶
縁性基板と、前記絶縁性基板上に形成されるｎ型窒化物
半導体層と、前記ｎ型窒化物半導体層上に形成される負
電極と、前記ｎ型窒化物半導体層上であって前記負電極
が形成されていない部位に形成されるｐ型窒化物半導体
層と、前記ｐ型窒化物半導体層上に形成される正電極と
を備えており、前記絶縁性基板の同一面側に前記ｎ型窒
化物半導体層と前記負電極と前記ｐ型窒化物半導体層と
前記正電極とが形成されてなるフリップチップ形式の窒
化物半導体発光素子において、前記発光素子の端面にお
いて前記ｎ型窒化物半導体層の端面を被覆するように、
絶縁性被膜が前記同一面側において前記発光素子の端面
で前記絶縁性基板と接するように前記ｎ型窒化物半導体
層の端面から前記ｐ型窒化物半導体層の端面、前記正電
極および負電極の表面にかけて、必要な露出部分を除い
て連続して形成されていることを特徴とする。 A nitride semiconductor light emitting device of the present invention comprises an insulating substrate, an n-type nitride semiconductor layer on which a negative electrode is formed, and a p-type nitride semiconductor layer on which a positive electrode is formed. In a nitride semiconductor light emitting device in which and are exposed on the same surface side
In the nitride semiconductor light emitting device, the surface of the insulating substrate, the surface of the n-type nitride semiconductor layer, and the p
The surface of the type nitride semiconductor layer is formed on the end face of the light emitting device.
In addition , a continuous insulating film is formed from the end face of the n-type nitride semiconductor layer to the surface on the electrode side. In addition, another nitride semiconductor light emitting device of the present invention,
Insulating substrate and n-type nitridation formed on the insulating substrate
Semiconductor layer and the n-type nitride semiconductor layer
A negative electrode and the negative electrode on the n-type nitride semiconductor layer.
P-type nitride semiconductor formed in a portion where no pole is formed
Body layer and a positive electrode formed on the p-type nitride semiconductor layer
And the negative electrode and the positive electrode on the same surface side.
Forming and connecting to the outside through conductive adhesive Nitride half
In a conductor light emitting device, the same surface on the insulating substrate
The n-type nitride semiconductor layer, the negative electrode, and the p-type nitride layer on the side.
An oxide semiconductor layer and the positive electrode are formed.
At the end face of the optical element, the end face of the n-type nitride semiconductor layer is
Insulating coating is applied on the same side as before.
Wherein in contact with the insulating substrate at the end face of the serial - emitting element
From the end face of the n-type nitride semiconductor layer to the p-type nitride semiconductor layer
The end face of the positive electrode and the surface of the negative electrode.
Characterized by being formed continuously except for the exposed parts
And Furthermore, another nitride semiconductor light emitting device of the present invention
Is an insulating substrate and an n-type formed on the insulating substrate
A nitride semiconductor layer and a layer formed on the n-type nitride semiconductor layer.
And a negative electrode on the n-type nitride semiconductor layer,
P-type nitride formed in a portion where the negative electrode is not formed
A semiconductor layer and a positive layer formed on the p-type nitride semiconductor layer.
The negative electrode and the positive electrode on the same surface.
Formed on the side and connected to the outside through a conductive adhesive
In a semiconductor light emitting device,
The n-type nitride semiconductor layer, the negative electrode, and the p
Type nitride semiconductor layer and the positive electrode are formed,
The edge of the n-type nitride semiconductor layer on the edge surface of the light emitting device
Insulating coating that is colored to cover the surface
The insulating substrate is formed on the end surface of the light emitting element on the same surface side.
From the end face of the n-type nitride semiconductor layer so as to be in contact with
The end face of the p-type nitride semiconductor layer, the positive electrode and the negative electrode
Formed continuously over the surface, except for the exposed parts that are required.
It is characterized by being. Furthermore, the nitriding of the present invention
A method for manufacturing a semiconductor light-emitting device includes: an insulating substrate;
An n-type nitride semiconductor layer formed on an edge substrate,
A negative electrode formed on the n-type nitride semiconductor layer and the n-type nitride semiconductor layer.
On the oxide semiconductor layer and the negative electrode is not formed
A p-type nitride semiconductor layer formed in the region, and the p-type nitride semiconductor layer
And a positive electrode formed on the semiconductor layer,
Negative electrode and positive electrode are formed on the same surface side and conductive adhesive
For manufacturing a nitride semiconductor light emitting device connected to the outside through a via
Method, on the same surface side of the insulating substrate, the n
-Type nitride semiconductor layer and the p-type nitride semiconductor layer are sequentially formed.
Lengthening step, the p-type nitride semiconductor layer and the n-type
By removing a part of the type nitride semiconductor layer by etching,
The insulating substrate, the n-type nitride semiconductor layer, and the p-type
-Type nitride semiconductor layer and the step of exposing the same surface side
On the surface of the n-type nitride semiconductor layer, the negative electrode, the p
For forming each of the positive electrodes on the surface of the type nitride semiconductor layer
And the n-type nitride semiconductor on the end face of the light emitting device.
Covering the end face of the body layer and the end face of the p-type nitride semiconductor layer
The n-type nitride exposed in the previous SL-emitting device end face by
Semiconductor layer and the p-type nitride semiconductor layer, or the n-type
To prevent a short circuit between the nitride semiconductor layer and the positive electrode
The end face of the light emitting element on the same surface side.
An insulating film is formed on the n-type nitride semi-metal so that it is in contact with the edge substrate.
From the end face of the conductor layer to the end face of the p-type nitride semiconductor layer,
Apply the required exposed area over the surface of the positive and negative electrodes.
Except for the step of continuously forming.
It Furthermore, another nitride semiconductor light emitting device of the present invention is
Edge substrate and n-type nitride formed on the insulating substrate
A semiconductor layer and a negative layer formed on the n-type nitride semiconductor layer.
An electrode, and the negative electrode on the n-type nitride semiconductor layer
P-type nitride semiconductor formed in a region where no ridge is formed
A layer and a positive electrode formed on the p-type nitride semiconductor layer
And the n-type nitride on the same surface side of the insulating substrate.
Oxide semiconductor layer, the negative electrode, and the p-type nitride semiconductor layer
A flip-chip type structure in which the positive electrode is formed.
In a compound semiconductor light emitting device, the end face of the light emitting device is
And to cover the end face of the n-type nitride semiconductor layer,
The insulating coating is on the same surface side as the end surface of the light emitting element.
The n-type nitride semiconductor in contact with the insulating substrate
From the end face of the layer to the end face of the p-type nitride semiconductor layer, the positive electrode
Exclude the exposed areas required over the surface of the pole and the negative electrode.
It is characterized by being continuously formed.
【０００８】図１は本発明の窒化物半導体発光素子の一
実施例の構造を示したものである。本発明の発光素子
は、ｎ層２の端部が除去されて基板１が露出された構造
を有している。ｎ層２の端部を除去するには、エッチン
グを用いることが好ましい。エッチング手段としては、
例えば反応性イオンエッチング（ＲＩＥ）、反応性イオ
ンビームエッチング（ＲＩＢＥ）、イオンミリング等の
ドライエッチング手段を用いることが好ましい。FIG. 1 shows the structure of an embodiment of the nitride semiconductor light emitting device of the present invention. The light emitting element of the present invention has a structure in which the end portion of the n layer 2 is removed and the substrate 1 is exposed. Etching is preferably used to remove the end portion of the n-layer 2. As an etching means,
For example, it is preferable to use dry etching means such as reactive ion etching (RIE), reactive ion beam etching (RIBE), and ion milling.
【０００９】続いて、除去されたｎ層２の端面から電極
側の表面にかけて絶縁性被膜６が形成されている。この
絶縁性被膜６の材料としては、絶縁性を有するものであ
れば何でも良く、例えばＳｉＯ２、ＴｉＯ２、Ａｌ２Ｏ
３、Ｓｉ３Ｎ４等を使用することができる。また、絶縁
性被膜６を形成するには、所定のマスクを形成後、蒸
着、スパッタ、ＣＶＤ等の方法を用いて形成することが
できる。絶縁性被膜６は電極全体を被覆するのではな
く、電極と他のリード電極部材とを、半田等で接着する
ために必要な露出部分を残しておくことは言うまでもな
い。Subsequently, an insulating coating 6 is formed from the end surface of the removed n layer 2 to the surface on the electrode side. Any material having an insulating property may be used as the material of the insulating coating film 6, for example, SiO 2 , TiO 2 , Al 2 O.
3 , Si 3 N 4 or the like can be used. Further, in order to form the insulating film 6, it is possible to form it by using a method such as vapor deposition, sputtering or CVD after forming a predetermined mask. It goes without saying that the insulating coating 6 does not cover the entire electrode, but leaves an exposed portion necessary for bonding the electrode and another lead electrode member with solder or the like.
【００１０】また本発明の窒化物半導体発光素子は、前
記絶縁性被膜が着色されていることを特徴とする。Further, the nitride semiconductor light emitting device of the present invention is characterized in that the insulating film is colored.
【００１１】本発明の発光素子において基板側を発光観
測面とする場合、前記絶縁性被膜としては可視光を吸収
するような非透光性の材料を用いて形成することもでき
る。例えば、赤色の発光素子の場合は前記絶縁性被膜を
赤色に、青色の発光素子の場合は前記絶縁性被膜を青色
に、発光素子の発光色と同一色を有する前記絶縁性被膜
を形成する。発光素子の発光色と同一色を有する絶縁性
被膜を形成すると、その絶縁性被膜がフィルターとなっ
てコントラストを向上させる。つまりディスプレイを構
成した場合に、フィルターが外光を吸光することにより
発光素子のコントラストが向上する。また別の目的とし
て、発光色の異なる色を着色すると発光色を変えること
もできる。絶縁性被膜を着色するには、例えば人口宝石
を製造する技術が適用でき、具体的にはＡｌ２Ｏ３であ
ればＣｒ、Ｎ、Ｆｅ等を混入させることにより着色可能
である。In the light emitting device of the present invention, when the substrate side is used as the light emission observation surface, the insulating film may be formed using a non-translucent material that absorbs visible light. For example, in the case of a red light emitting element, the insulating coating is red, in the case of a blue light emitting element, the insulating coating is blue, and the insulating coating having the same color as the light emitting element is formed. When an insulating coating having the same color as the light emitting element is formed, the insulating coating serves as a filter to improve the contrast. That is, when a display is constructed, the filter absorbs external light to improve the contrast of the light emitting element. For another purpose, the emission color can be changed by coloring with different emission colors. For coloring the insulating film, for example, a technique for manufacturing artificial jewels can be applied, and specifically, if Al 2 O 3, it can be colored by mixing Cr, N, Fe, or the like.
【００１２】[0012]
【作用】本発明の発光素子は、ｎ層２の端部がエッチン
グ等により除去され、その除去されたｎ層２の端面から
電極側の表面にかけて絶縁性被膜６が形成されている。
電極側の表面に形成された絶縁性被膜６により、ボンデ
ィング時におけるｐ電極５とｎ電極４との間の短絡を防
止できる。更に本発明の発光素子では、端面に形成され
た絶縁性被膜６により、図２に示したように発光素子を
配線基板１０上等に実装する時に、発光素子の電極と配
線基板上に設けられた導電部１１とを接続する導電性接
着剤７が、発光素子端面にまで回り込み付着した場合で
もｐ層２とｎ層３、およびｎ層２とｐ電極５との間で短
絡が生じる恐れがない。即ち、ｎ電極４側の導電性接着
剤７とｐ電極５側の導電性接着剤７が直接短絡する以外
には、本発明の発光素子において短絡が生じる恐れがな
い。In the light emitting device of the present invention, the end portion of the n layer 2 is removed by etching or the like, and the insulating coating 6 is formed from the removed end surface of the n layer 2 to the electrode side surface.
The insulating coating 6 formed on the surface on the electrode side can prevent a short circuit between the p electrode 5 and the n electrode 4 during bonding. Further, in the light emitting device of the present invention, the insulating coating 6 formed on the end face provides the electrodes of the light emitting device and the wiring substrate when the light emitting device is mounted on the wiring substrate 10 as shown in FIG. Even if the conductive adhesive 7 connecting the conductive portion 11 wraps around and adheres to the end surface of the light emitting element, a short circuit may occur between the p layer 2 and the n layer 3 and between the n layer 2 and the p electrode 5. Absent. That is, there is no possibility that a short circuit will occur in the light emitting device of the present invention except that the conductive adhesive 7 on the n-electrode 4 side and the conductive adhesive 7 on the p-electrode 5 side are directly short-circuited.
【００１３】また、本発明の発光素子において、電極側
を発光観測面とした場合、前記絶縁性被膜６として透光
性の絶縁性被膜を形成すると、ｎ層およびｐ層の端部は
エッチングにより除去されているため、エッチング端
面、つまり半導体層端面を平滑にすることができるた
め、発光素子端面からの発光の光学特性にばらつきがな
くなる。In the light emitting device of the present invention, when the electrode side is used as a light emission observation surface, when a translucent insulating coating is formed as the insulating coating 6, the end portions of the n layer and the p layer are etched. Since it is removed, the etching end face, that is, the end face of the semiconductor layer can be made smooth, so that there is no variation in the optical characteristics of light emitted from the end face of the light emitting element.
【００１４】或いは、本発明の発光素子において、基板
側を発光観測面とする場合、前記絶縁性被膜としては非
透光性の材料を用いて形成することが望ましい。する
と、発光素子端面、および電極側つまり観測面と反対側
からの漏光を無くすことができるため、発光素子端面か
らの発光の光学特性のばらつきの問題を解消できるだけ
でなく、発光素子からの発光を発光観測面側に効率よく
取り出すことができ発光強度が向上する。更に、前記絶
縁性被膜が発光素子の発光を吸収するように、発光素子
の発光色に合わせて絶縁性被膜を着色することによりコ
ントラストが良くなる。Alternatively, in the light emitting device of the present invention, when the substrate side is used as the light emission observation surface, it is desirable that the insulating film is formed using a non-translucent material. Then, since it is possible to eliminate light leakage from the end surface of the light emitting element and from the electrode side, that is, the side opposite to the observation surface, it is possible not only to solve the problem of variation in optical characteristics of light emission from the end surface of the light emitting element, but also to prevent light emission from the light emitting element The light emission can be efficiently taken out to the observation surface side, and the emission intensity is improved. Furthermore, the contrast is improved by coloring the insulating coating in accordance with the emission color of the light emitting element so that the insulating coating absorbs the light emitted from the light emitting element.
【００１５】また更に本発明の発光素子では、ウェーハ
からチップを切り出す際、ｎ層に接触しないで切断する
ことができるので、ｎ層にクラックが生じることがなく
信頼性が向上する。Furthermore, in the light emitting device of the present invention, when cutting a chip from a wafer, the chip can be cut without making contact with the n layer, so that cracking does not occur in the n layer and reliability is improved.
【００１６】[0016]
【実施例】図１は本発明の一実施例に係る窒化物半導体
発光素子の構造を示す模式断面図である。この図を基
に、本発明の実施例について説明する。EXAMPLE FIG. 1 is a schematic sectional view showing the structure of a nitride semiconductor light emitting device according to an example of the present invention. An embodiment of the present invention will be described based on this drawing.
【００１７】サファイア基板１上にｎ層２とｐ層３とを
順に成長させたウエーハを用意する。次に、ｎ層２およ
びｐ層３の端部をＲＩＥ法を用いてドライエッチングを
行い、図１に示すような形状となるように、サファイア
基板１表面まで除去した。続いて、ｐ層３およびｎ層２
の一部を同様にＲＩＥ法を用いてドライエッチングを行
い、図１に示すような形状となるように、ｎ層２を露出
させた。エッチング後、ｎ層２表面に負電極４、ｐ層３
表面に正電極５を各々形成した。A wafer in which an n layer 2 and a p layer 3 are grown in order on a sapphire substrate 1 is prepared. Next, the end portions of the n-layer 2 and the p-layer 3 were dry-etched using the RIE method, and the surface of the sapphire substrate 1 was removed so as to have a shape as shown in FIG. Then, p layer 3 and n layer 2
A part of the above was similarly dry-etched by using the RIE method to expose the n-layer 2 so as to have a shape as shown in FIG. After etching, the negative electrode 4 and the p layer 3 are formed on the surface of the n layer 2.
Positive electrodes 5 were formed on the surface, respectively.
【００１８】以上のようにしてエッチングにより除去さ
れたｎ層２の端面、および電極側の表面を覆うようにし
てＳｉＯ２よりなる絶縁性被膜６を形成し、図１に示す
ような本発明の窒化物半導体発光素子を得る。この時、
負電極４および正電極５の表面は、ボンディング可能な
ように露出させた箇所を残しておく。An insulating coating 6 made of SiO 2 is formed so as to cover the end surface of the n layer 2 removed by etching as described above and the surface on the electrode side. A nitride semiconductor light emitting device is obtained. At this time,
The exposed surfaces of the negative electrode 4 and the positive electrode 5 are left so that bonding can be performed.
【００１９】上記のようにして得られた本発明の窒化物
半導体発光素子を、配線基板上の導電部に実装した場合
の形状を示したのが図２である。このように負電極４お
よび正電極５を、導電性接着剤７を介して配線基板１０
上の導電部１１に接続した。FIG. 2 shows the shape of the nitride semiconductor light emitting device of the present invention obtained as described above when mounted on a conductive portion on a wiring board. In this way, the negative electrode 4 and the positive electrode 5 are connected to the wiring board 10 via the conductive adhesive 7.
It was connected to the upper conductive part 11.
【００２０】このようにして実装された発光素子は、電
極側の表面および素子端面が絶縁性薄膜６で覆われてい
るため、導電性接着剤７が素子端面に回り込んで付着し
ても、短絡不良は生じなかった。In the light emitting element thus mounted, since the surface on the electrode side and the element end surface are covered with the insulating thin film 6, even if the conductive adhesive 7 wraps around and adheres to the element end surface, No short circuit failure occurred.
【００２１】[0021]
【発明の効果】以上説明したように、本発明によれば発
光素子端面のｎ層の端部を除去して、その除去された部
分に絶縁性被膜を設けることにより、従来問題となって
いた発光素子端面の露出されたｎ層とｐ層、およびｎ層
とｐ電極との界面の短絡を防止することができる。また
発光素子端面からの発光の光学特性のばらつきの問題も
解消でき、更に発光素子からの発光を発光観測面側に効
率よく取り出すことができる。また前記絶縁性被膜とし
て、着色された絶縁性被膜を用いることによりコントラ
ストが良くなるという利点もある。このように本発明に
よれば、信頼性の向上した窒化物半導体発光素子を提供
することができる。As described above, according to the present invention, by removing the end portion of the n layer of the end surface of the light emitting element and providing the insulating coating on the removed portion, there has been a problem in the prior art. It is possible to prevent short circuits at the exposed n-layer and p-layer of the light-emitting device and at the interface between the n-layer and the p-electrode. Further, the problem of variations in the optical characteristics of the light emitted from the end face of the light emitting element can be solved, and the light emitted from the light emitting element can be efficiently extracted to the light emission observation surface side. Further, there is an advantage that the contrast is improved by using a colored insulating coating as the insulating coating. As described above, according to the present invention, it is possible to provide a nitride semiconductor light emitting device with improved reliability.
【図１】 本発明の窒化物半導体発光素子の一実施例の
構造を示す模式断面図。FIG. 1 is a schematic cross-sectional view showing the structure of an embodiment of a nitride semiconductor light emitting device of the present invention.
【図２】 本発明の窒化物半導体発光素子を配線基板上
に実装した場合の形状を示す模式断面図。FIG. 2 is a schematic cross-sectional view showing a shape of a nitride semiconductor light emitting device of the present invention mounted on a wiring board.
【図３】 従来の窒化物半導体発光素子の構造を示す模
式断面図。FIG. 3 is a schematic cross-sectional view showing the structure of a conventional nitride semiconductor light emitting device.
１・・・・基板 ２・・・・ｎ型窒化物半導体層 ３・・・・ｐ型窒化物半導体層 ４・・・・負電極 ５・・・・正電極 ６・・・・絶縁性被膜 ７・・・・導電性接着剤 １０・・・・配線基板 １１・・・・導電部 1 ... substrate 2 ... N-type nitride semiconductor layer 3 ... P-type nitride semiconductor layer 4 ... Negative electrode 5 ... Positive electrode 6 ... Insulating film 7 ... Conductive adhesive 10 ··· Wiring board 11 ... Conductive part
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平５−343742（ＪＰ，Ａ) 特開 昭56−79482（ＪＰ，Ａ) 特開 平５−13816（ＪＰ，Ａ) 特開 平７−94783（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 33/00 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-5-343742 (JP, A) JP-A-56-79482 (JP, A) JP-A-5-13816 (JP, A) JP-A-7- 94783 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) H01L 33/00
Claims (7)
窒化物半導体層と、正電極が形成されるｐ型窒化物半導
体層とが同一面側に露出されてなる窒化物半導体発光素
子において、 前記窒化物半導体発光素子は 更に前記絶縁性基板の表
面、前記ｎ型窒化物半導体層の表面、及び前記ｐ型窒化
物半導体層の表面には、前記発光素子の端面において前
記ｎ型窒化物半導体層の端面から電極側の表面にかけて
連続した絶縁性被膜が形成されていることを特徴とする
窒化物半導体発光素子。1. A nitride semiconductor light emission in which an insulating substrate, an n-type nitride semiconductor layer on which a negative electrode is formed, and a p-type nitride semiconductor layer on which a positive electrode is formed are exposed on the same surface side. Elementary
The nitride semiconductor light emitting device further includes a front surface of the insulating substrate, a surface of the n-type nitride semiconductor layer, and a surface of the p-type nitride semiconductor layer at an end face of the light emitting device. A nitride semiconductor light emitting device, characterized in that a continuous insulating film is formed from the end face of the n-type nitride semiconductor layer to the surface on the electrode side.
を特徴とする請求項１に記載の窒化物半導体素子。2. The nitride semiconductor device according to claim 1, wherein the insulating film is colored.
体発光素子の製造方法において、 絶縁性基板上にｎ型窒化物半導体層とｐ型窒化物半導体
層とを順に成長させる工程と、前記ｐ型窒化物半導体層
および前記ｎ型窒化物半導体層の一部を除去して、前記
絶縁性基板と、前記ｎ型窒化物半導体層と、前記ｐ型窒
化物半導体層とを同一面側に露出させる工程と、前記ｎ
型窒化物半導体層表面に負電極、前記ｐ型窒化物半導体
層の表面に正電極を各々形成する工程と、前記発光素子
の端面において前記ｎ型窒化物半導体層の端面から電極
側の表面にかけて連続した絶縁性被膜を形成する工程、
とを備えることを特徴とする窒化物半導体発光素子の製
造方法。3. A nitride semiconductor having an insulating coating formed thereon.
Method of manufacturing body light emitting deviceAt N-type nitride semiconductor layer and p-type nitride semiconductor layer on insulating substrate
A step of sequentially growing a layer and the p-type nitride semiconductor layer
And removing a part of the n-type nitride semiconductor layer,
An insulating substrate, the n-type nitride semiconductor layer, and the p-type nitride semiconductor layer.
A step of exposing the oxide semiconductor layer to the same surface side;
Negative electrode on the surface of the p-type nitride semiconductor layer, the p-type nitride semiconductor
Forming each positive electrode on the surface of the layer,The light emitting device
At the end face ofFrom the end face of the n-type nitride semiconductor layer to the electrode
A step of forming a continuous insulating coating over the side surface,
And a nitride semiconductor light emitting device
Build method.
されるｎ型窒化物半導体層と、前記ｎ型窒化物半導体層N-type nitride semiconductor layer and the n-type nitride semiconductor layer
上に形成される負電極と、前記ｎ型窒化物半導体層上でAnd a negative electrode formed on the n-type nitride semiconductor layer.
あって前記負電極が形成されていない部位に形成されるIt is formed in the part where the negative electrode is not formed
ｐ型窒化物半導体層と、前記ｐ型窒化物半導体層上に形a p-type nitride semiconductor layer and a layer formed on the p-type nitride semiconductor layer.
成される正電極とを備えており、前記負電極および正電And a positive electrode formed of the negative electrode and the positive electrode.
極を同一面側に形成して導電性接着剤を介して外部と接Form the pole on the same side and connect it to the outside via a conductive adhesive.
続する窒化物半導体発光素子において、In the following nitride semiconductor light emitting device, 前記絶縁性基板上の前記同一面側に前記ｎ型窒化物半導The n-type nitride semiconductor is formed on the same surface of the insulating substrate.
体層と前記負電極と前Front of body layer and the negative electrode 記ｐ型窒化物半導体層と前記正電The p-type nitride semiconductor layer and the positive electrode
極とが形成されており、前記発光素子の端面において前And a pole is formed on the end face of the light emitting device.
記ｎ型窒化物半導体層の端面を被覆するように、絶縁性Insulating so as to cover the end face of the n-type nitride semiconductor layer
被膜が前記同一面側において前記発光素子の端面で前記The coating is formed on the same surface side at the end surface of the light emitting device.
絶縁性基板と接するように前記ｎ型窒化物半導体層の端The edge of the n-type nitride semiconductor layer is in contact with the insulating substrate
面から前記ｐ型窒化物半導体層の端面、前記正電極およFrom the surface, the end face of the p-type nitride semiconductor layer, the positive electrode, and
び負電極の表面にかけて、必要な露出部分を除いて連続And the surface of the negative electrode, except where necessary
して形成されていることを特徴とする窒化物半導体発光Nitride semiconductor light-emitting device characterized by being formed by
素子。element.
されるｎ型窒化物半導体層と、前記ｎ型窒化物半導体層N-type nitride semiconductor layer and the n-type nitride semiconductor layer
上に形成される負電極と、前記ｎ型窒化物半導体層上でAnd a negative electrode formed on the n-type nitride semiconductor layer.
あって前記負電極が形成されていない部位に形成されるIt is formed in the part where the negative electrode is not formed
ｐ型窒化物半導体層と、前記ｐ型窒化物半導体層上に形a p-type nitride semiconductor layer and a layer formed on the p-type nitride semiconductor layer.
成される正電極とを備えており、前記負電極および正電And a positive electrode formed of the negative electrode and the positive electrode.
極を同一面側に形成して導電性接着剤を介して外部と接Form the pole on the same side and connect it to the outside via a conductive adhesive.
続する窒化物半導体発光素子において、In the following nitride semiconductor light emitting device, 前記絶縁性基板上の前記同一面側に前記ｎ型窒化物半導The n-type nitride semiconductor is formed on the same surface of the insulating substrate.
体層と前記負電極と前記ｐ型窒化物半導体層と前記正電Body layer, the negative electrode, the p-type nitride semiconductor layer, and the positive electrode
極とが形成されており、前記発光素子の端面において前And a pole is formed on the end face of the light emitting device.
記ｎ型窒化物半導体層の端面を被覆するように、着色さIt is colored so as to cover the end face of the n-type nitride semiconductor layer.
れている絶縁性被膜が前記同一面側において前記発光素The insulating coating is formed on the same surface side as the luminescent element.
子の端面で前記絶縁性基板と接するように前記ｎ型窒化The n-type nitriding so that the end face of the child is in contact with the insulating substrate.
物半導体層の端面から前記ｐ型窒化物半導体層の端面、From the end face of the semiconductor layer to the end face of the p-type nitride semiconductor layer,
前記正電極および負電極の表面にかけて、必要な露出部Required exposed area over the surface of the positive and negative electrodes
分を除いて連続して形成されていることを特徴とする窒Nitrogen, characterized by being formed continuously except for
化物半導体発光素子。Semiconductor light emitting device.
されるｎ型窒化物半導体層と、前記ｎ型窒化物半導体層N-type nitride semiconductor layer and the n-type nitride semiconductor layer
上に形成される負電極と、前記ｎ型窒化物半導体層上でAnd a negative electrode formed on the n-type nitride semiconductor layer.
あって前記負電極が形成されていない部位に形成されるIt is formed in the part where the negative electrode is not formed
ｐ型窒化物半導体層と、前記ｐ型窒化物半導体層上に形a p-type nitride semiconductor layer and a layer formed on the p-type nitride semiconductor layer.
成される正電極とを備えており、前記負電極および正電And a positive electrode formed of the negative electrode and the positive electrode.
極を同一面側に形成して導電性接着剤を介して外部と接Form the pole on the same side and connect it to the outside via a conductive adhesive.
続する窒化物半導体発光素子の製造方法において、In the following method for manufacturing a nitride semiconductor light emitting device, 前記絶縁性基板上の前記同一面側に前記ｎ型窒化物半導The n-type nitride semiconductor is formed on the same surface of the insulating substrate.
体層と前記ｐ型窒化物半導体層とを順に成長させる工程Of sequentially growing a body layer and the p-type nitride semiconductor layer
と、When, 前記ｐ型窒化物半導体層および前記ｎ型窒化物半導体層The p-type nitride semiconductor layer and the n-type nitride semiconductor layer
の一部をエッチングにより除去して、前記絶縁性基板Part of the insulating substrate is removed by etching,
と、前記ｎ型窒化物半導体層と、前記ｐ型窒化物And the n-type nitride semiconductor layer and the p-type nitride 半導体semiconductor
層とを前記同一面側に露出させる工程と、Exposing the layer to the same surface side, 前記ｎ型窒化物半導体層表面に前記負電極、前記ｐ型窒The negative electrode and the p-type nitride are formed on the surface of the n-type nitride semiconductor layer.
化物半導体層の表面に前記正電極を各々形成する工程Forming each of the positive electrodes on the surface of the oxide semiconductor layer
と、When, 前記発光素子の端面において前記ｎ型窒化物半導体層のOf the n-type nitride semiconductor layer on the end face of the light emitting device,
端面および前記ｐ型窒化物半導体層の端面を被覆するこTo cover the end face and the end face of the p-type nitride semiconductor layer.
とで前記発光素子端面で露出された前記ｎ型窒化物半導And the n-type nitride semiconductor exposed at the end face of the light emitting device.
体層と前記ｐ型窒化物半導体層、または前記ｎ型窒化物Body layer and the p-type nitride semiconductor layer, or the n-type nitride
半導体層と前記正電極との短絡を防止するように、前記In order to prevent a short circuit between the semiconductor layer and the positive electrode,
同一面側において前記発光素子の端面で前記絶縁性基板The insulative substrate on the end face of the light emitting device on the same side
と接するように絶縁性被膜を前記ｎ型窒化物半導体層のAn insulating film is formed on the n-type nitride semiconductor layer so as to be in contact with
端面から前記ｐ型窒化物半導体層の端面、前記正電極おFrom the end face to the end face of the p-type nitride semiconductor layer, the positive electrode,
よび負電極の表面にかけて、必要な露出部分を除いて連And the surface of the negative electrode, except for the exposed parts required.
続して形成する工程と、を備えることを特徴とする窒化Nitriding, characterized in that
物半導体発光素子の製造方法。Method for manufacturing semiconductor light emitting device.
されるｎ型窒化物半導体層と、前記ｎ型窒化物半導体層N-type nitride semiconductor layer and the n-type nitride semiconductor layer
上に形成される負電極と、前記ｎ型窒化物半導体層上でAnd a negative electrode formed on the n-type nitride semiconductor layer.
あって前記負電極が形成されていない部位に形成されるIt is formed in the part where the negative electrode is not formed
ｐ型窒化物半導体層と、前記ｐ型窒化物半導体層上に形a p-type nitride semiconductor layer and a layer formed on the p-type nitride semiconductor layer.
成される正電極とを備えており、前記絶縁性基板の同一And a positive electrode formed of the same insulating substrate.
面側に前記ｎ型窒化物半導体層と前記負電極と前記ｐ型On the surface side, the n-type nitride semiconductor layer, the negative electrode, and the p-type
窒化物半導体層と前記正電極とが形成されてなるフリッA frit formed by forming a nitride semiconductor layer and the positive electrode.
プチップ形式の窒化物半導体発光素子において、In a chip type nitride semiconductor light emitting device, 前記発光素子の端面において前記ｎ型窒化物半導体層のOf the n-type nitride semiconductor layer on the end face of the light emitting device,
端面を被覆するように、絶縁性被膜が前記同一面側におAn insulating coating is applied to the same side to cover the end face.
いて前記発光素子の端面で前記絶縁性基板と接するようSo that the end face of the light emitting element is in contact with the insulating substrate.
に前記ｎ型窒化物半導体層の端面から前記ｐ型窒化物半From the end face of the n-type nitride semiconductor layer to the p-type nitride semiconductor layer.
導体層の端面、前記正電極および負電極の表面にかけOver the end face of the conductor layer and the surface of the positive and negative electrodes
て、必要な露出部分を除いて連続して形成されているこAnd it is formed continuously except for the exposed parts.
とを特徴とする窒化物半導体発光素子。And a nitride semiconductor light emitting device.
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| WO2007126094A1 (en) | 2006-05-02 | 2007-11-08 | Mitsubishi Chemical Corporation | Semiconductor light-emitting device |
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| JP3556080B2 (en) * | 1997-11-14 | 2004-08-18 | 日亜化学工業株式会社 | Nitride semiconductor device |
| JP2003124514A (en) * | 2001-10-17 | 2003-04-25 | Sony Corp | Semiconductor light emitting element and its manufacturing method |
| JP2008263246A (en) * | 2008-08-06 | 2008-10-30 | Sanyo Electric Co Ltd | Light-emitting device |
| JP2012028381A (en) | 2010-07-20 | 2012-02-09 | Sharp Corp | Semiconductor light emitting device and method of manufacturing the same |
| KR101694999B1 (en) * | 2010-07-26 | 2017-01-10 | 엘지이노텍 주식회사 | Light emitting device |
| CN102479894A (en) * | 2010-11-25 | 2012-05-30 | 同方光电科技有限公司 | Light emitting diode of gallium nitride (GaN) based material and manufacturing method thereof |
| CN102544288A (en) * | 2010-12-27 | 2012-07-04 | 同方光电科技有限公司 | Light-emitting diode for GaN-base material with epitaxial structure and preparation method for light-emitting diode |
| JP2012165016A (en) * | 2012-04-27 | 2012-08-30 | Sanyo Electric Co Ltd | Light-emitting device |
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| JP2015176963A (en) * | 2014-03-14 | 2015-10-05 | 株式会社東芝 | Semiconductor light emitting device |
| CN104466668A (en) * | 2014-12-11 | 2015-03-25 | 北京工业大学 | Surface type semiconductor laser device short-circuit-prevention structure |
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