JP3451694B2 - Vacuum deposition equipment - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum vapor deposition device.

[0002]

2. Description of the Related Art Conventionally, in a vacuum vapor deposition apparatus, an evaporation source and a semiconductor substrate are arranged in a vacuum container, and the evaporation source is evaporated by heating and melting the evaporation source by electron beam or resistance heating. It is designed to be vapor-deposited on.
Here, there is a problem in that the heat of vaporization generated when the evaporation source is heated and melted raises the surface temperature of the semiconductor substrate and the metal lift-off in the semiconductor substrate fails. A conventional method for measuring the temperature of a semiconductor substrate has been proposed in Japanese Patent Application Laid-Open No. 2-112254. In this method, a thermocouple is incorporated at a desired position on the surface of the semiconductor substrate, wiring is provided at the measurement position, and the surface temperature of the semiconductor substrate is measured at a remote position.

[0003]

However, in the temperature measuring method according to the above publication, since the thermocouple is directly attached to the semiconductor substrate, the effective area for forming elements on the semiconductor substrate is reduced. Further, in this publication, there is no mention of how to deal with the rise in the temperature of the semiconductor substrate. That is, no mention is made of measures such as metal lift-off not being successful if the temperature of the semiconductor substrate rises too much.

Therefore, an object of the present invention is to measure the substrate surface temperature without providing a temperature measuring member on the semiconductor substrate to be vapor-deposited and to prevent an excessive rise in the surface temperature of the semiconductor substrate to be vapor-deposited. It is to provide a vacuum vapor deposition apparatus capable of performing.

[0005]

The invention according to claim 1 evaporates the evaporation material by heating the evaporation source arranged in the vacuum container, and the evaporation material is arranged around the evaporation source in the vacuum container. In a vacuum vapor deposition apparatus adapted for vapor deposition on a semiconductor substrate, a substrate temperature measuring substrate arranged around the evaporation source in the vacuum container, and a thermocouple arranged on a vapor deposition surface of the substrate temperature measuring substrate. , The surface temperature of the semiconductor substrate is estimated based on the surface temperature of the substrate temperature measurement substrate measured by the thermocouple, and transmitted from the evaporation source to the semiconductor substrate as the evaporation source is heated.
The gist is a vacuum vapor deposition apparatus provided with a control means for controlling the amount of heat supplied by radiant heat.

A second aspect of the present invention has as its gist a vacuum vapor deposition apparatus in which the semiconductor substrate and the substrate temperature measuring substrate according to the first aspect of the invention are arranged at positions equivalent to the evaporation source.

A third aspect of the present invention has as its gist a vacuum vapor deposition apparatus in which the semiconductor substrate and the substrate temperature measuring substrate in the first aspect of the invention are arranged at positions not equivalent to the evaporation source.

According to a fourth aspect of the present invention, in the vacuum container according to the first aspect of the invention, a position and a vaporization position covering the upper surface of the evaporation source are provided.
Equipped with a rotatable disc in a position that does not cover the upper surface of the source
An evaporation stop shutter is provided, and the control means controls the vaporization.
Stop heating the source and place the disc above the evaporation source.
By placing it in a position to cover the surface,
The gist is a vacuum vapor deposition apparatus that controls the amount of heat supplied by radiant heat transmitted to a conductive substrate .

[0009]

[Action] In the invention of claim 1, 4, heating the evaporation source, radiation heat from the evaporation source is transmitted to the semiconductor substrate and the substrate temperature measuring substrate, the surface temperature of the semiconductor substrate and the substrate temperature measuring substrate is increased To do. Also, a substrate for measuring the substrate temperature
The surface temperature of the substrate temperature measuring substrate is measured by a thermocouple arranged on the vapor deposition surface of the plate . Then, the control means estimates the surface temperature of the semiconductor substrate based on the surface temperature of the substrate temperature measuring substrate measured by the thermocouple. That is, the surface temperature of the semiconductor substrate is indirectly measured. Further, the control means controls the amount of heat supplied by the radiant heat transmitted from the evaporation source to the semiconductor substrate according to the surface temperature of the semiconductor substrate. That is,
When the surface temperature of the semiconductor substrate rises too much, the amount of heat supplied from the evaporation source to the semiconductor substrate is reduced.

According to the invention of claim 2, in addition to the operation of the invention of claim 1, the semiconductor substrate and the substrate temperature measuring substrate are arranged at positions equivalent to the evaporation source, and the semiconductor substrate and the substrate temperature measuring substrate are arranged. And receive the same amount of heat from the evaporation source. Therefore, the surface temperature of the substrate temperature measurement substrate and the surface temperature of the semiconductor substrate can be equalized.

According to the invention of claim 3, in addition to the function of the invention of claim 1, the semiconductor substrate and the substrate temperature measuring substrate are arranged at positions not equivalent to the evaporation source, and the surface temperature of the substrate temperature measuring substrate is The surface temperature of the semiconductor substrate is estimated by adding a correction to

[0012]

[0013]

【Example】

(First Embodiment) A first embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a vertical sectional view of a vacuum vapor deposition apparatus of this embodiment. FIG. 2 is a sectional view taken along line AA in FIG.
That is, FIG. 2 is a view of the wafer holder 5 of FIG. 1 viewed from the lower vapor deposition surface side. The vacuum vapor deposition apparatus of this embodiment is a resistance heating type vacuum vapor deposition apparatus.

The inside of the vacuum container 1 is evacuated. A boat 2 is arranged on the bottom surface in the vacuum container 1, and the boat 2 is made of tungsten. An evaporation source 3 is arranged in the boat 2. As the evaporation source 3, gold, nickel, titanium, aluminum or the like is used. Also, boat 2
Is connected to a power supply circuit 4 outside the vacuum container 1,
When power is supplied from the power supply circuit 4 and the boat 2 is energized, the evaporation source 3 is heated and melted. As a result, the evaporation material is evaporated from the evaporation source 3.

A wafer holder 5 is arranged in the vacuum container 1. The wafer holder 5 is composed of four legs 6 and a wafer holder plate 7. Wafer holder plate 7
As shown in FIG. 2, each has a rectangular plate shape, and bar-shaped leg portions 6 extend downward from the four corners of the wafer holder plate 7. The lower ends of the legs 6 are fixed to the bottom surface inside the vacuum container 1. The wafer holder plate 7 is arranged above the boat 2 and is in a horizontal state. The wafer holder plate 7 has a first recess 8a that opens upward,
The four recesses of the second recess 8b, the third recess 8c, and the fourth recess 8d are formed, and the respective recesses 8a, 8b, 8 are formed.
Circular through holes 9a, 9b, 9c, 9 are provided at the bottom of c, 8d.
d is formed. Then, in the first concave portion 8a, the second concave portion 8b, and the third concave portion 8c, it is desired to deposit the evaporation material GaA.
semiconductor substrates (wafers) 10a, 10b, such as s, InP,
10c is inserted. A substrate temperature measuring substrate (wafer) 11 is inserted in the fourth recess 8d. That is,
The outer diameters of the semiconductor substrates 10a, 10b, 10c and the substrate temperature measuring substrate 11 are slightly smaller than the inner diameters of the first recess 8a, the second recess 8b, the third recess 8c, and the fourth recess 8d, It is inserted and supported from above the wafer holder plate 7 into the first recess 8a, the second recess 8b, the third recess 8c, and the fourth recess 8d.

As described above, the semiconductor substrates 10a, 10b,
The set positions of 10c and the substrate temperature measuring substrate 11 are equivalent to the evaporation source 3. Semiconductor substrates 10a, 1
The lower surfaces of 0b and 10c are vapor deposition surfaces, and a patterned positive resist is formed on the vapor deposition surfaces. or,
The semiconductor substrates 10a, 10b and 10c and the substrate temperature measuring substrate 11 are made of the same material, have the same substrate area and the same substrate thickness.

When vacuum evaporation is performed in the vacuum container 1, the surface temperature of the semiconductor substrates 10a, 10b, 10c does not rise due to heat conduction using air or the like as a medium, but from the heat-melted evaporation source 3. Rises due to the radiant heat of.

Deposition surface (bottom surface) of substrate 11 for measuring substrate temperature
As shown in FIG. 3, the tip portion of the sheath-type thermocouple 12 for temperature measurement is brought into close contact with the central portion of the portion with an adhesive material 13. The adhesive material 13 is made of a material such as silver paste or solder, which has heat resistance to heat of vapor deposition and has high thermal conductivity. As shown in FIG. 1, the thermocouple 12 is connected to a thermometer body 14 outside the vacuum container 1,
The thermometer body 14 converts the surface temperature of the substrate temperature measuring substrate 11 by the thermocouple 12 into an electric signal.

The surface temperature of the substrate temperature measuring substrate 11 thus measured is the semiconductor substrate 10a, 10b, 10
It is equal to the surface temperature of c. That is, the substrate temperature measuring substrate 11
Since the semiconductor substrate 10a, 10b, and 10c are made of the same material and have the same vapor deposition area and substrate thickness and are arranged at positions equivalent to the evaporation source 3, the surface of the substrate temperature measuring substrate 11 is Temperature and semiconductor substrates 10a, 10b,
The surface temperature of 10c becomes equal.

Further, the evaporation stop shutter 1 is provided in the vacuum container 1.
5 are arranged. The evaporation stop shutter 15 is provided with a support leg 16 erected from the bottom surface of the vacuum container 1 and a disc 1 rotatably supported at an upper end portion of the support leg 16 in a horizontal direction.
7 and a motor 18 for rotating the disc 17. The disk 17 is in a horizontal state above the boat 2
Is rotatable between a position covering the upper surface of the boat 2 and a position not covering the upper surface of the boat 2, and is rotated by the motor 18 to both positions.

The controller 19 as a control means is mainly composed of a microcomputer. This controller 19 is connected to the thermometer body 14 and
The measurement result of the surface temperature Ta of the substrate temperature measuring substrate 11 is detected by the signal input from the circuit 4. Also, the controller 19
Is connected to the power supply circuit 4, and the evaporation source 3 is connected through the power supply circuit 4.
Control heating. Further, the controller 19 is connected to the motor 18 of the evaporation stop shutter 15 and controls the motor 18 to control the rotation of the disc 17.

Next, the operation of the vacuum vapor deposition apparatus thus constructed will be described with reference to FIGS. 4 shows a flowchart executed by the controller 19, and FIG. 5 shows a timing chart.

When the start switch (not shown) is turned on, the controller 19 starts the process of FIG. 4, sets the flag F to "0" by initialization, and executes step 100.
Then, the measurement result of the surface temperature Ta of the substrate temperature measuring substrate 11 is read by the signal from the thermometer main body 14. Then, in step 101, the controller 19 sets the surface temperature Ta of the substrate temperature measuring substrate 11 to the semiconductor substrates 10a, 10b, 10
The surface temperature of c is Tb (Tb ← Ta). That is, as described above, the substrate temperature measuring substrate 11 and the semiconductor substrate 10
a, 10b, and 10c are the same material, have the same vapor deposition area and substrate thickness, and are arranged at positions equivalent to the evaporation source 3, so that the measured surface temperature of the substrate temperature measuring substrate 11 is measured. Ta on the semiconductor substrates 10a, 10b, 10
It is estimated to be the surface temperature Tb of c.

Then, the controller 19 proceeds to step 10
2 the surface temperature Tb of the semiconductor substrate 10a, 10b, 10c
Is 100 ° C or higher, the semiconductor substrate 1
Since the surface temperature Tb of 0a, 10b, 10c is less than 100 ° C., the process proceeds to step 103. The controller 19 determines in step 103 whether or not the flag F is "1". Since F = 0 by initialization, the process proceeds to step 105. In step 105, the controller 19 heats and melts the evaporation source 3 by resistance heating through the power supply circuit 4 and opens the evaporation stop shutter 15 (disc 17).
Is a position where the upper surface of the boat 2 is not covered).

By the resistance heating of the evaporation source 3, the evaporation material is evaporated from the evaporation source 3, and the evaporation material is set on the wafer holder 5 on the upper part of the vacuum container 1, and the semiconductor substrate 10a,
It is vapor-deposited on the vapor-deposition surface which is the lower surface of 10b and 10c and the substrate 11 for substrate temperature measurement. Further, radiant heat is transmitted to the semiconductor substrates 10a, 10b, 10c and the substrate temperature measuring substrate 11 as the evaporation source 3 is heated, and the substrates 10a, 10b, 10c, 11
Surface temperature rises.

The controller 19 then proceeds to step 10
After performing the process of 5, the flag F is set to "0" in step 106. The controller 19 is t1 in FIG.
Until the timing of step 100 → 101 → 102 →
103 → 105 → 106 → 100 ... Is repeated.

The controller 19 then proceeds to step 10
In Step 2, when the surface temperature Tb of the semiconductor substrates 10a, 10b, 10c reaches 100 ° C. or higher and reaches the deformation temperature of the positive resist (timing t1 in FIG. 5), step 107
Move to. In step 107, the controller 19 stops the heating of the evaporation source 3 and the evaporation stop shutter 1
5 is closed (the disk 17 is positioned so as to cover the upper surface of the boat 2). As a result, by stopping the heating of the evaporation source 3, the heat supply from the evaporation source 3 to the semiconductor substrates 10a, 10b, 10c is stopped. Further, by closing the vapor deposition stop shutter 15 at the same time as the heating of the evaporation source 3 is stopped, radiant heat from the evaporation source 3 due to preheating is applied to the semiconductor substrates 10a, 10b, 10.
In addition to being prevented from being transmitted to c, the evaporation material flying from the evaporation source 3 to the semiconductor substrates 10a, 10b, 10c is blocked, and the evaporation is stopped. Therefore, the deterioration of the film quality due to the cooling of the evaporation source 3 due to the stop of the heating of the evaporation source 3 is avoided.

Incidentally, instead of stopping the heating of the evaporation source 3,
The heating temperature of the evaporation source 3 may be suppressed by reducing the power for heating the evaporation source 3 by the power supply circuit 4. Then, the controller 19 sets the flag F to "1" in step 108 after performing the process of step 107. The controller 19 proceeds to steps 100 → 101 → 102 → 103 in the next processing, and since the flag F = 1 is set in step 103, the controller 19 proceeds to step 104. The controller 19 performs step 10
4, it is determined whether the surface temperature Tb of the semiconductor substrates 10a, 10b, 10c is 80 ° C. or lower. Since the surface temperature Tb of the semiconductor substrates 10a, 10b, 10c is higher than 80 ° C. in t1 to t2 of FIG. Move to.

As described above, at the timing of t1 to t2 in FIG. 5, steps 100 → 101 → 102 → 103.
→ 104 → 107 → 108 → 100 ... is repeated.
Then, in step 104, the controller 19 determines that the surface temperature Tb of the semiconductor substrates 10a, 10b, 10c is 80.
When the temperature becomes equal to or lower than ° C (timing of t2 in Fig. 5), the process proceeds to step 105. The controller 19 executes step 105
In step 3, the evaporation source 3 is heated and melted by resistance heating through the power supply circuit 4, and the evaporation stop shutter 15 is opened (the disk 17 is located at a position not covering the upper surface of the boat 2).
As a result, the surface temperature of the substrates 10a, 10b, 10c, 11 rises.

By repeating such operations, the surface temperature Tb of the semiconductor substrates 10a, 10b, 10c is 80.degree.
It is controlled to be within the range of 100 ° C. In this way, when the heat supply amount from the evaporation source 3 to the semiconductor substrates 10a, 10b, 10c is controlled by the surface temperature Tb of the semiconductor substrates 10a, 10b, 10c, the heat supply is stopped at 100 ° C and the temperature is raised to 80 ° C. It has a hysteresis that heat supply is restarted.

As described above, in this embodiment, the evaporation material is evaporated by heating the evaporation source 3 arranged in the vacuum container 1, and the semiconductor substrate arranged around the evaporation source 3 in the vacuum container 1. In a vacuum vapor deposition apparatus for vapor deposition on 10a, 10b, 10c, a substrate temperature measuring substrate 11 arranged around an evaporation source 3 in a vacuum container 1.
And the thermocouple 12 arranged on the surface of the substrate temperature measuring substrate 11, and the semiconductor substrates 10a, 1 based on the surface temperature Ta of the substrate temperature measuring substrate 11 measured by the thermocouple 12.
The controller 19 (control means) for estimating the surface temperature Tb of 0b, 10c and controlling the heat supply amount from the evaporation source 3 to the semiconductor substrates 10a, 10b, 10c. Therefore,
When the evaporation source 3 is heated, the radiant heat from the evaporation source 3 is transferred to the semiconductor substrates 10a, 10b, 10c and the substrate temperature measuring substrate 11, and the surface temperature of the semiconductor substrates 10a, 10b, 10c and the substrate temperature measuring substrate 11 is changed. To rise.
Further, the surface temperature of the substrate temperature measuring substrate 11 is measured by the thermocouple 12. Then, the controller 19 estimates the surface temperature Tb of the semiconductor substrates 10a, 10b, 10c based on the surface temperature Ta of the substrate temperature measuring substrate 11 measured by the thermocouple 12, and stops the heating of the evaporation source 3 while The evaporation stop shutter 15 is closed to control the amount of heat supplied from the evaporation source 3 to the semiconductor substrates 10a, 10b, 10c.
That is, the surface temperatures of the semiconductor substrates 10a, 10b, 10c are indirectly determined, and the semiconductor substrates 10a, 1c
When the surface temperature of 0b, 10c rises too much, the heat supply amount from the evaporation source 3 to the semiconductor substrates 10a, 10b, 10c is reduced. As a result, the semiconductor substrates 10a, 10 for deposition are deposited.
b and 10c, the substrate surface temperature can be measured without providing a temperature measuring member, and the semiconductor substrate 10a for vapor deposition can be measured.
It is possible to prevent an excessive rise in the surface temperature of 10b and 10c.

Further, the semiconductor substrates 10a, 10b, 10c and the substrate temperature measuring substrate 11 are arranged at positions equivalent to the evaporation source 3, and the semiconductor substrates 10a, 10b, 10c and the substrate temperature measuring substrate 11 are evaporated. Receive the same amount of heat from source 3. Therefore, the surface temperature Ta of the substrate temperature measuring substrate 11 and the surface temperature Tb of the semiconductor substrates 10a, 10b, 10c can be made equal, and the surface temperature Tb of the semiconductor substrates 10a, 10b, 10c can be estimated with higher accuracy. can do.

Further, the semiconductor substrates 10a, 10b, 10
From the evaporation source 3 to the semiconductor substrate 10 by the surface temperature Tb of c.
When controlling the heat supply to a, 10b, 10c, 10
Hysteresis was provided such that heat supply was stopped at 0 ° C and heat supply was restarted at 80 ° C. By providing the hysteresis, it is possible to reduce the frequency of switching the heat supply stop / restart as compared with the case where the hysteresis is not provided.

As an application of this embodiment, although the total number of substrates is four in FIG. 2, even when a wafer holder capable of setting a larger number of substrates is used, one of the substrates is used as a substrate. A temperature measuring substrate may be used.
Further, the substrate temperature measuring substrate 11 and the semiconductor substrates 10a, 10
The shapes of b and 10c may be different. Further, the material of the substrate temperature measuring substrate 11 and the semiconductor substrate 10
When the material of a, 10b, 10c is different, the semiconductor substrate 10a, 10
Materials having similar thermal conductivity or surface state of b and 10c may be selected.

Further, in the example shown in FIGS. 1 to 5, the surface temperature Tb of the semiconductor substrates 10a, 10b and 10c is 100.degree.
When the deformation temperature of the positive resist is reached as described above, the heating of the evaporation source 3 is stopped and the evaporation stop shutter 15 is closed, but only one of the heating stop of the evaporation source 3 and the closing operation of the evaporation stop shutter 15 is performed. May be. (Second Embodiment) Next, the second embodiment will be described focusing on the differences from the first embodiment.

As shown in FIG. 6, in this embodiment,
The semiconductor substrate 10a and the substrate temperature measuring substrate 20 are arranged at positions that are not equivalent to the evaporation source 3. The inside of the vacuum container 1 is evacuated to a vacuum, and the semiconductor substrate 10a on which the evaporation material is to be deposited is horizontally set on the wafer holder 5 inside the vacuum container 1. Further, the evaporation source 3 to be vapor-deposited on the substrate 10a is disposed in the lower portion inside the vacuum container 1, and is heated and melted by resistance heating, and the vaporized evaporation material is vapor-deposited on the vapor deposition surface of the semiconductor substrate 10a. Further, the substrate temperature measuring substrate 2 is provided in the vacuum container 1 at a position separated from the wafer holder 5 at substantially the same height as the wafer holder 5.
0 is attached so as to face the evaporation source 3. A thermocouple 12 for measuring the substrate temperature is provided in contact with the surface of the substrate 20 for measuring the substrate temperature on the vapor deposition surface.
Is connected to the thermometer body 14 outside the vacuum container 1.

In the above-described first embodiment, the material, the deposition area, and the substrate thickness of the substrate temperature measuring substrate 11 are the same as those of the semiconductor substrates 10a, 10b, 10c, but in this embodiment, the substrate temperature measurement is performed. The material, vapor deposition area, and substrate thickness of the substrate 20 for use are different from the material, vapor deposition area, and substrate thickness of the semiconductor substrate 10a. Then, the difference between the surface temperature of the semiconductor substrate 10a measured by the method described in the first embodiment and the surface temperature measured by the substrate temperature measuring substrate 20 is measured in advance to obtain the substrate temperature measuring substrate. The surface temperature measured at 20 is corrected to estimate the temperature of the semiconductor substrate 10a.

More specifically, the controller 19 executes the flowchart shown in FIG. First, when the start switch (not shown) is turned on, the controller 19 starts the process of FIG. 7, and reads the measurement result of the surface temperature Ta of the substrate temperature measuring substrate 20 by a signal from the thermometer main body 14 in step 100. . The controller 19 determines the surface temperature Ta of the substrate temperature measurement substrate 20 in step 201.
Then, the correction value To is subtracted from this to obtain the surface temperature Tb of the semiconductor substrate 10a (Tb ← Ta−To).

Since the subsequent processing is the same as that of the first embodiment, its explanation is omitted. As described above, in the present embodiment, in step 201, the surface temperature Ta of the substrate temperature measuring substrate 20 is corrected to estimate the surface temperature Tb of the semiconductor substrate 10a. Therefore, the semiconductor substrate 10a and the substrate temperature measuring substrate 20 can be set at positions that are not equivalent to the evaporation source 3, and the position where the substrate temperature measuring substrate 20 is set in the vacuum container 11 is not limited. Therefore, the number of semiconductor substrates that can be vapor-deposited at one time can be increased by one. However, since the substrate temperature measured here is due to radiant heat from the molten evaporation source 3, the substrate temperature measuring substrate 20 needs to be set at a position exposed to the molten evaporation source 3.
Further, the material (thermal conductivity), the deposition area, and the substrate thickness of the substrate temperature measuring substrate 20 are not limited.

As an application of the second embodiment, the surface temperature Ta of the substrate temperature measuring substrate 20 can be changed from the surface temperature Ta to the semiconductor substrate 10a.
As a correction method for obtaining the surface temperature Tb of the semiconductor substrate 10 with respect to the surface temperature Ta of the substrate temperature measuring substrate 20,
The surface temperature Tb of a may be obtained in advance and converted into a map, and the map may be used for conversion. That is, the surface temperature Ta of the substrate temperature measuring substrate 20 and the surface temperature T of the semiconductor substrate 10a.
surface temperature Tb of the semiconductor substrate 10a using a calibration curve with
May be estimated.

The present invention is not limited to the above embodiments, but may be embodied in an electron beam heating type vacuum vapor deposition apparatus other than the resistance heating type vacuum vapor deposition apparatus, for example. In this case, the power applied to melt the evaporation source 3 is the beam current.

[0043]

As described in detail above, according to the inventions of claims 1 and 4 , the substrate surface temperature can be measured without providing a temperature measuring member on the semiconductor substrate to be vapor-deposited, and the semiconductor substrate to be vapor-deposited can be measured. It has an excellent effect of preventing an excessive rise in surface temperature. According to the invention of claim 2, in addition to the effect of the invention of claim 1, the surface temperature of the semiconductor substrate can be estimated with higher accuracy. Further, according to the invention of claim 3, in addition to the effect of the invention of claim 1,
The position for setting the substrate for measuring the substrate temperature in the vacuum container is not limited .

[Brief description of drawings]

FIG. 1 is a vertical sectional view of a vacuum vapor deposition device according to a first embodiment.

FIG. 2 is a sectional view taken along line AA in FIG.

FIG. 3 is a cross-sectional view showing a mounted state of a thermocouple.

FIG. 4 is a flowchart for explaining the operation.

FIG. 5 is a time chart for explaining the operation.

FIG. 6 is a vertical sectional view of a vacuum vapor deposition device according to a second embodiment.

FIG. 7 is a flowchart for explaining the operation.

[Explanation of symbols]

1 vacuum container 3 evaporation sources 10a, 10b, 10c Semiconductor substrate 11 Substrate temperature measurement substrate 12 thermocouple 19 Controller as control means

─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-62-294173 (JP, A) JP-A-2-105209 (JP, A) Actually open 2-72530 (JP, U) Actually open 5- 19876 (JP, U) (58) Fields investigated (Int.Cl. ⁷ , DB name) C23C 14/00-14/58 H01L 21/203 H01L 21/66

Claims (4)

(57) [Claims] 1. A vacuum vapor deposition apparatus adapted to evaporate an evaporation material by heating an evaporation source arranged in a vacuum container and to vapor-deposit it on a semiconductor substrate arranged around the evaporation source in the vacuum container. In, in the vacuum container, the substrate temperature measuring substrate arranged around the evaporation source, a thermocouple arranged on the vapor deposition surface of the substrate temperature measuring substrate, the substrate temperature measured by the thermocouple And a control means for estimating the surface temperature of the semiconductor substrate based on the surface temperature of the measurement substrate and controlling the heat supply amount by the radiant heat transmitted from the evaporation source to the semiconductor substrate when the evaporation source is heated. A vacuum vapor deposition device characterized by. 2. The vacuum vapor deposition apparatus according to claim 1, wherein the semiconductor substrate and the substrate temperature measuring substrate are arranged at positions equivalent to the evaporation source. 3. The vacuum vapor deposition apparatus according to claim 1, wherein the semiconductor substrate and the substrate temperature measuring substrate are arranged at positions that are not equivalent to the evaporation source. 4. The upper surface of the evaporation source is placed in the vacuum container.
Can be rotated to a position that covers and a position that does not cover the upper surface of the evaporation source
An evaporation stop shutter equipped with a disc is arranged,
The stage stops heating of the evaporation source and
The evaporation by placing it over the top surface of the evaporation source.
The vacuum vapor deposition apparatus according to claim 1, wherein the amount of heat supplied by radiant heat transmitted from a source to the semiconductor substrate is controlled.