JPH10259024A - Thin film of vanadium oxide and its production - Google Patents
Thin film of vanadium oxide and its productionInfo
- Publication number
- JPH10259024A JPH10259024A JP9083326A JP8332697A JPH10259024A JP H10259024 A JPH10259024 A JP H10259024A JP 9083326 A JP9083326 A JP 9083326A JP 8332697 A JP8332697 A JP 8332697A JP H10259024 A JPH10259024 A JP H10259024A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- vanadium oxide
- temperature
- oxide thin
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 57
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910001935 vanadium oxide Inorganic materials 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000010408 film Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000001301 oxygen Substances 0.000 claims abstract description 24
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 24
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 15
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 14
- 239000010980 sapphire Substances 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000000608 laser ablation Methods 0.000 claims abstract description 7
- 230000008859 change Effects 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 4
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 11
- 239000013078 crystal Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 2
- 101100102624 Drosophila melanogaster Vinc gene Proteins 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ボロメータ型赤外
線センサに用いるボロメータ材料に好適な酸化バナジウ
ム薄膜及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vanadium oxide thin film suitable for a bolometer material used for a bolometer type infrared sensor and a method for producing the same.
【０００２】[0002]
【従来の技術】酸化バナジウム薄膜は、室温動作のボロ
メータ型赤外線センサに用いるボロメータ材料として重
要な性質の一つである比抵抗の温度変化率（以下、ＴＣ
Ｒという）の絶対値が、他のボロメータ材料、例えば酸
化チタン（ＴＣＲ＝−０.２％／Ｋ）等に比べて大き
い。ＴＣＲはボロメータ型赤外線センサの感度の比例係
数であるため、このＴＣＲが大きいほど赤外線センサの
感度が向上する。2. Description of the Related Art A vanadium oxide thin film is one of important properties as a bolometer material used for a bolometer type infrared sensor operating at room temperature.
R) is larger than other bolometer materials, for example, titanium oxide (TCR = −0.2% / K). Since the TCR is a proportional coefficient of the sensitivity of the bolometer type infrared sensor, the sensitivity of the infrared sensor increases as the TCR increases.
【０００３】現在、室温におけるＴＣＲが約−２％／Ｋ
の酸化バナジウム薄膜が室温動作のボロメータ型赤外線
センサ材料として用いられている［N.Butler et. al.,S
PIE Proceedings vol.2252(1995) Infrared Technology
XXI］。また、スパッタリング法により成膜したＶＯ2
薄膜を、５００℃で熱処理することにより、温度２５℃
で−５.４％／ＫのＴＣＲを持つ酸化バナジウムがサフ
ァイア上に成膜されている［H. Jerominek and D. Vinc
ent, Optical Engineering 32 No.9，2092(1993)］。At present, the TCR at room temperature is about -2% / K
Vanadium oxide thin film is used as a bolometer-type infrared sensor material that operates at room temperature [N. Butler et. Al., S
PIE Proceedings vol.2252 (1995) Infrared Technology
XXI]. In addition, VO 2 formed by a sputtering method
The thin film is subjected to a heat treatment at 500 ° C. so that the temperature is 25 ° C.
Vanadium oxide with a TCR of -5.4% / K is deposited on sapphire [H. Jerominek and D. Vinc
ent, Optical Engineering 32 No. 9, 2092 (1993)].
【０００４】[0004]
【発明が解決しようとする課題】ボロメータ材料として
酸化バナジウム薄膜を用いた室温動作のボロメータ型赤
外線センサの高感度化を図るためには、酸化バナジウム
薄膜の室温付近におけるＴＣＲをできるだけ向上させる
ことが必要である。酸化バナジウムは、様々な結晶相が
存在するが、特に二酸化バナジウム(ＶＯ2）は室温での
ＴＣＲが大きい。この物質は、６０〜７０℃付近で半導
体−金属相転移を示し、比抵抗が大幅に変化するという
特徴を有する。ＶＯ2のバルクの高純度な単結晶の場
合、相転移温度以下での活性化エネルギーは０.５ｅＶ
であり［D. Adler,"Insulating andmetallic states of
transition metal oxides",Solid State Physics:Adva
ncesin Research and Applications、,F.Seitz，Ed.,Vo
l.21,pp.1，Academic Press(1968)］、この値から求め
たＴＣＲは約−６％／Ｋである（H. Jerominek,前
掲）。In order to enhance the sensitivity of a bolometer type infrared sensor operating at room temperature using a vanadium oxide thin film as a bolometer material, it is necessary to improve the TCR of the vanadium oxide thin film near room temperature as much as possible. It is. Vanadium oxide has various crystal phases. In particular, vanadium dioxide (VO 2 ) has a large TCR at room temperature. This material exhibits a semiconductor-metal phase transition at around 60 to 70 ° C., and has a characteristic that the specific resistance is largely changed. In the case of bulk VO 2 high-purity single crystal, the activation energy below the phase transition temperature is 0.5 eV.
And [D. Adler, "Insulating and metallic states of
transition metal oxides ", Solid State Physics: Adva
ncesin Research and Applications ,, F. Seitz, Ed., Vo
I. 21, pp. 1, Academic Press (1968)], and the TCR determined from this value is about -6% / K (H. Jerominek, supra).
【０００５】しかしながら、薄膜の状態で得られるＶＯ
2は、シリコンデバイス上に成膜した場合、約−２％／
Ｋ程度である（N. Butler et. al.、前掲)。また、良質
の薄膜が成長し易いサファイア基板上の薄膜の成長例
［M. Borek et al., Appl.Phys. Lett.,63(24),3288(19
93)］においても、室温付近でのＴＣＲを文献の図から
求めると約−３.５％／Ｋであり、バルクのものに比べ
て小さいという問題点がある。However, VO obtained in a thin film state
2 is about -2% /
About K (N. Butler et. Al., Supra). In addition, a growth example of a thin film on a sapphire substrate on which a good quality thin film is easily grown [M. Borek et al., Appl. Phys. Lett., 63 (24), 3288 (19
93)], there is a problem that the TCR at around room temperature is about -3.5% / K as determined from the figure in the literature, which is smaller than that of the bulk.
【０００６】また、このレベルのＴＣＲの大きな良質の
酸化バナジウムを得た例（H.Jerominek et al.,前掲）
においては、５００℃に保持する熱処理のプロセスを要
している。しかし、シリコン等を用いた集積回路デバイ
ス（ＩＣデバイス）上に成長する場合、この条件による
成膜では、プロセス温度が高いので、集積回路デバイス
を損なわずに成膜する事は困難であるという問題点があ
る。Further, an example of obtaining high-quality vanadium oxide having a large TCR at this level (H. Jerominek et al., Supra).
Requires a heat treatment process at 500 ° C. However, when growing on an integrated circuit device (IC device) using silicon or the like, there is a problem that it is difficult to form a film without damaging the integrated circuit device due to a high process temperature in film formation under these conditions. There is a point.
【０００７】そこで、本発明の技術的課題は、熱処理を
一切行わず、成長時の基板温度が５００℃を越えない条
件で、室温付近でのＴＣＲがバルクのＶＯ2に近い大き
な値を有し、室温動作のボロメータ型赤外線センサに用
いることが可能な酸化バナジウム薄膜を提供するととも
に、酸化バナジウムの成膜にその場成膜が可能なレーザ
アブレーション法を用い、作製パラメータの単純な制御
により薄膜のＴＣＲを最適化可能な酸化バナジウム薄膜
の製造方法を提供することにある。Therefore, the technical problem of the present invention is that the TCR near room temperature has a large value close to bulk VO 2 under the condition that the substrate temperature during growth does not exceed 500 ° C. without any heat treatment. In addition to providing a vanadium oxide thin film that can be used in a bolometer-type infrared sensor operating at room temperature, the laser ablation method that enables in-situ deposition of vanadium oxide is used, and the thin film is formed by simple control of fabrication parameters. An object of the present invention is to provide a method of manufacturing a vanadium oxide thin film capable of optimizing TCR.
【０００８】本発明のその他の目的や新規な特徴は後述
の実施の形態において明らかにする。[0008] Other objects and novel features of the present invention will be clarified in embodiments described later.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するため
に、本発明に係る第１の酸化バナジウム薄膜は、サファ
イア上に成長し、２５℃〜７５℃の温度範囲において比
抵抗の温度変化率が−６％／Ｋを越えることを特徴とし
ている。In order to achieve the above object, a first vanadium oxide thin film according to the present invention is grown on sapphire, and has a temperature change rate of specific resistance in a temperature range of 25 ° C. to 75 ° C. Exceeds -6% / K.
【００１０】また、本発明に係る第２の酸化バナジウム
薄膜は、シリコン酸化膜上に成長し、２５℃〜７５℃の
温度範囲において比抵抗の温度変化率が−４％／Ｋを越
えることを特徴としている。Further, the second vanadium oxide thin film according to the present invention is grown on a silicon oxide film and has a specific resistance temperature change rate exceeding -4% / K in a temperature range of 25 ° C. to 75 ° C. Features.
【００１１】本発明に係る酸化バナジウム薄膜の製造方
法は、レーザアブレーション法によって基板面に酸化バ
ナジウム薄膜を成膜する場合において、成膜時の酸素雰
囲気の圧力制御によって比抵抗の温度変化率を最適化す
ることを特徴としている。In the method for producing a vanadium oxide thin film according to the present invention, when a vanadium oxide thin film is formed on a substrate surface by a laser ablation method, the temperature change rate of the specific resistance is optimized by controlling the pressure of an oxygen atmosphere during the film formation. Is characterized by
【００１２】上記酸化バナジウム薄膜の製造方法におい
て、前記成膜時の基板温度が５００℃を越えないように
設定することが可能である。In the above-mentioned method for producing a vanadium oxide thin film, it is possible to set the substrate temperature during the film formation so as not to exceed 500 ° C.
【００１３】[0013]
【発明の実施の形態】以下、本発明に係る酸化バナジウ
ム薄膜及びその製造方法の実施の形態を図面に従って説
明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of a vanadium oxide thin film and a method for producing the same according to the present invention will be described with reference to the drawings.
【００１４】図１は本発明の実施の形態であって、レー
ザアブレーション法によって酸化バナジウム薄膜を成長
させるための薄膜作製装置の概略構成を示す。この図に
おいて、１は薄膜原料であるバナジウム若しくは酸化バ
ナジウムのターゲット、２は酸化バナジウム薄膜を成膜
するための基板であってサファイア基板（Ｒ面、すなわ
ち０１２面ともいう；結晶面の種類を示す）或いはシリ
コンウエハ（１００面；結晶面の種類を示す）上に酸化
膜を形成した基板である。これらのターゲット１及び基
板２は真空チャンバー３内に対向配置されている。４は
レーザ発生装置、５はレンズであり、レンズ５はレーザ
発生装置４により発生したパルスレーザ光を集光してタ
ーゲット１に照射する。前記真空チャンバー３内には、
酸素導入部６より酸素を導入可能であり、導入する酸素
流量は流量調節器７により調整自在である。なお、前記
基板２はヒータで３００〜５００℃に加熱可能である。FIG. 1 shows an embodiment of the present invention, and shows a schematic configuration of a thin film manufacturing apparatus for growing a vanadium oxide thin film by a laser ablation method. In this figure, reference numeral 1 denotes a target of vanadium or vanadium oxide which is a thin film material, and 2 denotes a substrate for forming a vanadium oxide thin film, which is a sapphire substrate (also referred to as an R plane, that is, a 012 plane; ) Or a substrate formed by forming an oxide film on a silicon wafer (100 planes; indicating the type of crystal plane). The target 1 and the substrate 2 are opposed to each other in a vacuum chamber 3. Reference numeral 4 denotes a laser generator, and reference numeral 5 denotes a lens. The lens 5 condenses the pulsed laser light generated by the laser generator 4 and irradiates the target 1 with the laser light. In the vacuum chamber 3,
Oxygen can be introduced from the oxygen introduction section 6, and the flow rate of the introduced oxygen can be adjusted by the flow rate regulator 7. The substrate 2 can be heated to 300 to 500 ° C. by a heater.
【００１５】ここで、レーザ発生装置４にはＡｒＦエキ
シマレーザ（波長１９３ｎｍ）を用い、１レーザパルス
あたりのエネルギーは約７Ｊ／cm2、繰り返し周波数は
３０Ｈｚとし、ターゲット１の材料には五酸化バナジウ
ム（Ｖ2０5）を使用した場合について述べる。Here, an ArF excimer laser (wavelength 193 nm) is used as the laser generator 4, the energy per laser pulse is about 7 J / cm 2 , the repetition frequency is 30 Hz, and the material of the target 1 is vanadium pentoxide. (V 2 0 5) described when using.
【００１６】図１のレーザアブレーション法による薄膜
作製装置において、真空チャンバー３内を１０-5Torrに
排気した後、レーザ発生装置４により発生したパルスレ
ーザ光をレンズ５で集光し、ターゲット１に照射してタ
ーゲット材料を蒸発、飛散させ、基板２上に堆積させ
た。また、薄膜成長時、酸素導入部６より酸素を導入
し、膜形成の際の酸素離脱を補う。導入する酸素流量は
流量調節器７により適切量に調整する。なお、成長時の
基板温度は３００〜５００℃、成膜時間は１０分間とし
た。In the apparatus for producing a thin film by the laser ablation method shown in FIG. 1, after evacuating the vacuum chamber 3 to 10 -5 Torr, the pulse laser light generated by the laser generator 4 is condensed by the lens 5 and By irradiation, the target material was evaporated and scattered, and was deposited on the substrate 2. Further, at the time of growing the thin film, oxygen is introduced from the oxygen introducing portion 6 to compensate for oxygen desorption at the time of film formation. The flow rate of the introduced oxygen is adjusted to an appropriate amount by the flow controller 7. The substrate temperature during growth was 300 to 500 ° C., and the film formation time was 10 minutes.
【００１７】基板面上に成膜、形成してなる成長した通
りの（as-grownの）薄膜について、同定のためＸ線回折
を行った。また、薄膜をペルチェ素子により温度変化さ
せ、４端子法により抵抗温度特性を求めた。The as-grown thin film formed and formed on the substrate surface was subjected to X-ray diffraction for identification. Further, the temperature of the thin film was changed by a Peltier element, and the resistance-temperature characteristics were obtained by a four-terminal method.
【００１８】図２及び図３は、薄膜作製時の基板温度が
４００℃の条件において成長時に導入する酸素の圧力を
５mTorrから３０mTorrまで変化させたときの抵抗温度特
性曲線を示す。但し、図２はサファイア基板、図３はシ
リコンウエハ（１００面）上に酸化膜を形成した基板の
場合である。FIGS. 2 and 3 show resistance-temperature characteristic curves when the pressure of oxygen introduced during growth is changed from 5 mTorr to 30 mTorr when the substrate temperature is 400 ° C. when the thin film is formed. However, FIG. 2 shows a case of a sapphire substrate, and FIG. 3 shows a case of an oxide film formed on a silicon wafer (100 surface).
【００１９】また、図４は、成膜時の酸素圧力をパラメ
ータとしたときの、測定温度２５℃におけるＴＣＲプロ
ットを示す。FIG. 4 shows a TCR plot at a measurement temperature of 25 ° C. when oxygen pressure during film formation is used as a parameter.
【００２０】更に図５及び図６にそれぞれサファイア及
びシリコン酸化膜上に成長した酸化バナジウム薄膜のＸ
線回折パターン（散乱角に対する相対強度の変化特性）
の測定例を示す。Further, FIGS. 5 and 6 show X of the vanadium oxide thin film grown on the sapphire and silicon oxide films, respectively.
X-ray diffraction pattern (change characteristics of relative intensity with respect to scattering angle)
The following shows an example of measurement.
【００２１】図２及び図３に示すように、成膜時の酸素
圧力の減少に伴い、酸化バナジウム薄膜の比抵抗が大幅
に減少する。また、同時に、測定温度に対する比抵抗値
の変化の様子は、図２の曲線（イ）及び図３の曲線
（イ）のはっきりとした転移を示す形状から、図２の曲
線（ロ）及び図３の曲線（ロ）のなだらかな変化を示す
形状へと変化する。As shown in FIGS. 2 and 3, the specific resistance of the vanadium oxide thin film is greatly reduced with the decrease in the oxygen pressure during the film formation. At the same time, the state of the change of the specific resistance value with respect to the measurement temperature is shown by the curve (b) in FIG. 2 and the curve (b) in FIG. The curve (b) changes to a shape showing a gentle change.
【００２２】更に図４から、成長の際導入する酸素量の
変化に対し、ＴＣＲが最大となる最適値が存在すること
がわかる。本発明の実施の形態で得られた最適化特性例
として、図２の（ロ）のサファイア基板上に成長した酸
化バナジウム薄膜の場合、酸素圧力２０mTorrの条件で
２５℃におけるＴＣＲは約−６.２％／Ｋ、比抵抗は約
０.３Ωcmの値を得た。また図３の（ロ）のシリコン酸
化膜上に成長した酸化バナジウム薄膜の場合、酸素圧力
１０mTorrの条件で２５℃におけるＴＣＲは約−４.５％
／Ｋ、比抵抗は約０.０２Ωcmの値を得た。さらに、２
５℃を越えて７５℃に至る温度範囲において、サファイ
ア及びシリコン酸化膜上の酸化バナジウム薄膜のＴＣＲ
は２５℃におけるＴＣＲより高い値を示した。FIG. 4 further shows that there is an optimum value that maximizes the TCR with respect to the change in the amount of oxygen introduced during growth. As an example of the optimization characteristics obtained in the embodiment of the present invention, in the case of a vanadium oxide thin film grown on a sapphire substrate shown in FIG. 2B, the TCR at 25 ° C. under an oxygen pressure of 20 mTorr is about −6. 2% / K and a specific resistance of about 0.3 Ωcm were obtained. In the case of the vanadium oxide thin film grown on the silicon oxide film shown in FIG. 3B, the TCR at 25 ° C. under an oxygen pressure of 10 mTorr is about -4.5%.
/ K and a specific resistance of about 0.02 Ωcm. In addition, 2
TCR of vanadium oxide thin film on sapphire and silicon oxide film in the temperature range exceeding 5 ° C. to 75 ° C.
Showed a higher value than the TCR at 25 ° C.
【００２３】これらの最適化特性例について測定したＸ
線回折パターンをそれぞれ図５及び図６に示す。但し、
ＶＯ2（２００）は酸化バナジウム結晶の２００面が、
ＶＯ2（１１１）は結晶の１１１面が、ＶＯ2（０１１）
は結晶の０１１面が、ＶＯ2（０２２）は結晶の０２２
面がそれぞれ現れていることを示している。そして、そ
れぞれのパターンをＪＣＰＤＳ（Joint Comittee on Po
wder DiffractionStandard）カードと照合した結果、共
にＶＯ2のピークと一致した。しかしながら、図２の
（ロ）及び図３の（ロ）に示すように、これらの薄膜の
抵抗温度曲線はＶＯ2薄膜の特徴である６０℃〜７０℃
付近における明確な相転移を示さず、なだらかに変化し
ていることから、従来得られているＶＯ2薄膜とは異な
るものと考えられる。X measured for these optimized characteristics examples
The line diffraction patterns are shown in FIGS. 5 and 6, respectively. However,
VO 2 (200) has 200 faces of vanadium oxide crystal,
In VO 2 (111), the 111 plane of the crystal is VO 2 (011)
Is the 011 plane of the crystal, and VO 2 (022) is 022 of the crystal.
This indicates that the faces have appeared. Then, each pattern is applied to JCPDS (Joint Committee on Po
As a result of comparison with a wder Diffraction Standard) card, both coincided with the peak of VO 2 . However, as shown in FIGS. 2B and 3B, the resistance temperature curves of these thin films are 60 ° C. to 70 ° C. which are characteristic of the VO 2 thin film.
Since there is no clear phase transition in the vicinity and the change is gradual, it is considered to be different from the conventionally obtained VO 2 thin film.
【００２４】以上のように、上記実施の形態で説明した
酸化バナジウム薄膜の製法により、成膜時の基板温度を
４００℃程度とし、５００℃以上での熱処理が不要な酸
化バナジウム薄膜の低温成長が可能である。As described above, by the method of manufacturing a vanadium oxide thin film described in the above embodiment, the substrate temperature at the time of film formation is set to about 400 ° C., and the low-temperature growth of the vanadium oxide thin film that does not require heat treatment at 500 ° C. or more is performed. It is possible.
【００２５】また、レーザアブレーション法による酸素
雰囲気下での酸化バナジウムの成膜において、成膜パラ
メータの一つである酸素圧力を最適化制御して（最適な
値を選ぶことにより）、酸化バナジウム薄膜の室温付近
のＴＣＲを向上させることができる。In addition, when forming a vanadium oxide film in an oxygen atmosphere by a laser ablation method, the vanadium oxide thin film is controlled by optimizing an oxygen pressure, which is one of film forming parameters, by selecting an optimum value. Can be improved near the room temperature.
【００２６】更に、本製法による酸化バナジウム薄膜の
ＴＣＲは、従来のＶＯ2薄膜とは異なり、サファイア基
板上に４００℃で成長した場合、温度２５℃付近におい
て−６％／Ｋ以上、集積回路デバイス材料であるシリコ
ン酸化膜上に４００℃で成長した場合、温度２５℃付近
において−４％／Ｋ以上を実現でき、従来得られている
実用化されたボロメータ用酸化バナジウム薄膜の室温付
近のＴＣＲ約−２％／Ｋと比較して２倍以上であり、優
れたボロメータ型赤外線センサ材料であるといえる。Further, unlike the conventional VO 2 thin film, the TCR of the vanadium oxide thin film according to the present manufacturing method, when grown on a sapphire substrate at 400 ° C., is -6% / K or more near a temperature of 25 ° C. When grown on a silicon oxide film as a material at 400 ° C., -4% / K or more can be achieved at a temperature of about 25 ° C. It is more than twice as large as -2% / K, which means that it is an excellent bolometer-type infrared sensor material.
【００２７】また、集積回路デバイス材料であるシリコ
ン酸化膜上に比較的低温で酸化バナジウム薄膜を成長さ
せて高いＴＣＲを実現でき、集積回路デバイスを損なわ
ずに成膜することも可能である。Further, a high TCR can be realized by growing a vanadium oxide thin film at a relatively low temperature on a silicon oxide film which is an integrated circuit device material, and it is possible to form a film without damaging the integrated circuit device.
【００２８】以上本発明の実施の形態について説明して
きたが、本発明はこれに限定されることなく請求項の記
載の範囲内において各種の変形、変更が可能なことは当
業者には自明であろう。Although the embodiments of the present invention have been described above, it is obvious to those skilled in the art that the present invention is not limited to the embodiments and various modifications and changes can be made within the scope of the claims. There will be.
【００２９】[0029]
【発明の効果】以上説明したように、本発明により、単
純な工程、簡単な成膜条件の設定で、サファイア又はシ
リコン酸化膜上に成長した、室温付近におけるＴＣＲが
−４〜−６％／Ｋ以上のバルクのＶＯ2に近い値を持つ
酸化バナジウム薄膜を提供することができ、ボロメータ
型センサの感度向上が可能となる。As described above, according to the present invention, the TCR near room temperature grown on a sapphire or silicon oxide film by a simple process and under simple film formation conditions is -4 to -6% / A vanadium oxide thin film having a value close to that of bulk VO 2 of K or more can be provided, and the sensitivity of the bolometer sensor can be improved.
【００３０】また、集積回路デバイスに適用可能な成膜
温度が５００℃を越えない（好ましくは４００℃以下
の）範囲で高いＴＣＲを実現できる利点もある。Another advantage is that a high TCR can be realized in a range where the film forming temperature applicable to the integrated circuit device does not exceed 500 ° C. (preferably 400 ° C. or less).
【図１】本発明に係る実施の形態であって薄膜作製装置
の概略を示す構成図である。FIG. 1 is a configuration diagram schematically showing a thin film manufacturing apparatus according to an embodiment of the present invention.
【図２】本発明の実施の形態においてサファイア基板上
への酸化バナジウム薄膜成長時に導入する酸素の圧力を
５mTorrから３０mTorrまで変化させたときの抵抗温度特
性曲線図である。FIG. 2 is a resistance-temperature characteristic curve diagram when the pressure of oxygen introduced during growth of a vanadium oxide thin film on a sapphire substrate is changed from 5 mTorr to 30 mTorr in the embodiment of the present invention.
【図３】同じくシリコン酸化膜上への酸化バナジウム薄
膜成長時に導入する酸素の圧力を５mTorrから３０mTorr
まで変化させたときの抵抗温度特性曲線図である。FIG. 3 shows the pressure of oxygen introduced at the time of growing a vanadium oxide thin film on a silicon oxide film from 5 mTorr to 30 mTorr.
FIG. 7 is a resistance-temperature characteristic curve diagram when the resistance-temperature characteristic is changed.
【図４】同じく成膜時の酸素圧力をパラメータとしたと
きの、測定温度２５℃におけるＴＣＲプロット図であ
る。FIG. 4 is a TCR plot at a measurement temperature of 25 ° C. when oxygen pressure during film formation is used as a parameter.
【図５】同じく成膜時の酸素圧力が２０mTorrのときサ
ファイア基板上に成長した酸化バナジウム薄膜のＸ線回
折パターン図である。FIG. 5 is an X-ray diffraction pattern diagram of a vanadium oxide thin film grown on a sapphire substrate when the oxygen pressure during film formation is 20 mTorr.
【図６】同じく成膜時の酸素圧力が１０mTorrのときシ
リコン酸化膜上に成長した酸化バナジウム薄膜のＸ線回
折パターン図である。FIG. 6 is an X-ray diffraction pattern diagram of a vanadium oxide thin film grown on a silicon oxide film when an oxygen pressure during film formation is 10 mTorr.
１ ターゲット ２ 基板 ３ 真空チャンバー ４ レーザ発生装置 ５ レンズ ６ 酸素導入部 ７ 流量調節器 DESCRIPTION OF SYMBOLS 1 Target 2 Substrate 3 Vacuum chamber 4 Laser generator 5 Lens 6 Oxygen introduction part 7 Flow rate controller
Claims (4)
の温度範囲において比抵抗の温度変化率が−６％／Ｋを
越えることを特徴とする酸化バナジウム薄膜。1. Growing on sapphire, 25 ° C. to 75 ° C.
A vanadium oxide thin film characterized in that the temperature change rate of the specific resistance exceeds -6% / K in the above temperature range.
５℃の温度範囲において比抵抗の温度変化率が−４％／
Ｋを越えることを特徴とする酸化バナジウム薄膜。2. A method of growing on a silicon oxide film, the method comprising:
In the temperature range of 5 ° C., the temperature change rate of the specific resistance is −4% /
A vanadium oxide thin film characterized by exceeding K.
に酸化バナジウム薄膜を成膜する酸化バナジウム薄膜の
製造方法において、成膜時の酸素雰囲気の圧力制御によ
って比抵抗の温度変化率を最適化することを特徴とする
酸化バナジウム薄膜の製造方法。3. A method for manufacturing a vanadium oxide thin film, wherein a vanadium oxide thin film is formed on a substrate surface by a laser ablation method, wherein a temperature change rate of a specific resistance is optimized by controlling a pressure of an oxygen atmosphere during the film formation. For producing a vanadium oxide thin film.
ない請求項３記載の酸化バナジウム薄膜の製造方法。4. The method for producing a vanadium oxide thin film according to claim 3, wherein the substrate temperature during the film formation does not exceed 500 ° C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9083326A JP3002720B2 (en) | 1997-03-17 | 1997-03-17 | Vanadium oxide thin film and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9083326A JP3002720B2 (en) | 1997-03-17 | 1997-03-17 | Vanadium oxide thin film and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10259024A true JPH10259024A (en) | 1998-09-29 |
| JP3002720B2 JP3002720B2 (en) | 2000-01-24 |
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ID=13799313
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9083326A Expired - Lifetime JP3002720B2 (en) | 1997-03-17 | 1997-03-17 | Vanadium oxide thin film and method for producing the same |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030019772A (en) * | 2001-08-31 | 2003-03-07 | (주)니즈 | Manufacturing method of non-cooling type vanadium dioxide thin film thermal sensor |
| WO2007114317A1 (en) * | 2006-03-31 | 2007-10-11 | Kitakyushu Foundation For The Advancement Of Industry, Science And Technology | Peltier device and temperature regulating container equipped with the peltier device |
| KR101202335B1 (en) * | 2010-07-27 | 2012-11-16 | 삼성에스디아이 주식회사 | Thermochromic Smart Window and Method of Manufacturing the Same |
| US10943847B2 (en) | 2016-07-04 | 2021-03-09 | Mitsubishi Electric Corporation | Semiconductor chip and semiconductor device |
| CN115772651A (en) * | 2022-12-01 | 2023-03-10 | 江苏黑马森田机器人有限公司 | Preparation method of intelligent laser protective coating material |
-
1997
- 1997-03-17 JP JP9083326A patent/JP3002720B2/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030019772A (en) * | 2001-08-31 | 2003-03-07 | (주)니즈 | Manufacturing method of non-cooling type vanadium dioxide thin film thermal sensor |
| WO2007114317A1 (en) * | 2006-03-31 | 2007-10-11 | Kitakyushu Foundation For The Advancement Of Industry, Science And Technology | Peltier device and temperature regulating container equipped with the peltier device |
| KR101202335B1 (en) * | 2010-07-27 | 2012-11-16 | 삼성에스디아이 주식회사 | Thermochromic Smart Window and Method of Manufacturing the Same |
| US8559094B2 (en) | 2010-07-27 | 2013-10-15 | Samsung Sdi Co., Ltd. | Thermochromic smart window and method of manufacturing the same |
| US10943847B2 (en) | 2016-07-04 | 2021-03-09 | Mitsubishi Electric Corporation | Semiconductor chip and semiconductor device |
| CN115772651A (en) * | 2022-12-01 | 2023-03-10 | 江苏黑马森田机器人有限公司 | Preparation method of intelligent laser protective coating material |
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| Publication number | Publication date |
|---|---|
| JP3002720B2 (en) | 2000-01-24 |
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