JP3440677B2 - Electronic component mounting method - Google Patents

Electronic component mounting method

Info

Publication number
JP3440677B2
JP3440677B2 JP03993496A JP3993496A JP3440677B2 JP 3440677 B2 JP3440677 B2 JP 3440677B2 JP 03993496 A JP03993496 A JP 03993496A JP 3993496 A JP3993496 A JP 3993496A JP 3440677 B2 JP3440677 B2 JP 3440677B2
Authority
JP
Japan
Prior art keywords
wire
wire bonding
heating
bonding
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP03993496A
Other languages
Japanese (ja)
Other versions
JPH09232359A (en
Inventor
俊夫 鈴木
文人 都築
健史 渡辺
文男 河西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP03993496A priority Critical patent/JP3440677B2/en
Publication of JPH09232359A publication Critical patent/JPH09232359A/en
Application granted granted Critical
Publication of JP3440677B2 publication Critical patent/JP3440677B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は半導体チップ等の電
子部品の実装方法に関するもので、特に、Ａｕワイヤボ
ンデイングによる電気接続において、回路基板側電極と
のワイヤボンデイングの接合性を向上させるための改良
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of mounting electronic components such as semiconductor chips, and more particularly, to an improvement for improving the bondability of wire bonding with a circuit board side electrode in electrical connection by Au wire bonding. Regarding

【０００２】[0002]

【従来の技術】従来、図４に示すような樹脂封止半導体
装置においては、ダイパッド２０にダイマウント材１４
により装着された半導体チップ１３と、リードフレーム
２１とをＡｕワイヤ１８にてワイヤボンデイングしてい
る。装置全体はモールド樹脂部材２２にて封止されてい
る。ここで、リードフレーム２１は４２アロイ、Ｃｕ等
の金属製であるため、ワイヤボンデイング時の加熱温度
を通常、２３０〜２５０°Ｃ程度にしており、さらに高
めの設定のときはこの加熱温度を３５０°Ｃ程度まで高
める場合もあった。2. Description of the Related Art Conventionally, in a resin-sealed semiconductor device as shown in FIG. 4, a die mount material 14 is attached to a die pad 20.
The semiconductor chip 13 mounted by and the lead frame 21 are wire-bonded with the Au wire 18. The entire device is sealed with a mold resin member 22. Here, since the lead frame 21 is made of metal such as 42 alloy or Cu, the heating temperature during wire bonding is usually set to about 230 to 250 ° C., and the heating temperature is set to 350 ° C. at a higher setting. In some cases, it was raised to about ° C.

【０００３】このような高い温度にてＡｕワイヤボンデ
イングするときは、接合部として強度の高い良好な接合
が得られた。ところで、近年、製品の小形化を図るた
め、図５に示すように半導体チップ１３をプリント基板
１０のボンディングパッド用Ａｕ電極１５に直接Ａｕワ
イヤ１８をボンデイングするタイプ（ＣＯＢ実装＝Ｃｈ
ｉｐ Ｏｎ Ｂｏａｒｄ実装）のものが開発され、実用
化されている。When the Au wire was bonded at such a high temperature, a good joint with high strength was obtained as the joint. By the way, in recent years, in order to miniaturize the product, as shown in FIG. 5, the semiconductor chip 13 is directly bonded to the Au electrode 15 for the bonding pad of the printed circuit board 10 by the bonding of the Au wire 18 (COB mounting = Ch.
(ip On Board implementation) has been developed and put to practical use.

【０００４】[0004]

【発明が解決しようとする課題】ところが、本発明者ら
の試作、検討によれば、プリント基板１０として、コス
トの安い有機系樹脂素材プリント基板（具体的には、ガ
ラスエポキシプリント基板）を用いた場合には、そのガ
ラス転移温度Ｔｇが１３０〜１５０°Ｃという比較的低
い温度であるため、ワイヤボンデイング時の加熱温度を
このガラス転移温度Ｔｇを越える１７５°Ｃ程度に設定
すると、図６に示すように、プリント基板７上の電極８
側のワイヤ剥がれが１００％近くまで多発することが判
明した。However, according to the trial production and examination by the present inventors, as the printed circuit board 10, a low cost organic resin material printed circuit board (specifically, a glass epoxy printed circuit board) is used. In this case, since the glass transition temperature Tg is a relatively low temperature of 130 to 150 ° C., if the heating temperature during wire bonding is set to about 175 ° C. which exceeds the glass transition temperature Tg, FIG. As shown, the electrodes 8 on the printed circuit board 7
It was found that the wire peeling on the side frequently occurred up to nearly 100%.

【０００５】ここで、図６のワイヤ剥がれとは、ワイヤ
ボンデイング直後に、Ａｕワイヤ１８の端部がＡｕ電極
１５に接合されずに、Ａｕ電極１５から剥がれている状
態を言う。このＡｕ電極１５側のワイヤ剥がれは、ワイ
ヤボンデイング時にプリント基板１０がガラス転移温度
Ｔｇを越えて加熱されるため、プリント基板１０の軟化
が起こり、その結果、ワイヤボンデイング時にプリント
基板１０上の電極１５側では接合部に超音波がうまく作
用しないため発生すると考えられる。Here, the wire peeling in FIG. 6 means a state in which the end portion of the Au wire 18 is peeled from the Au electrode 15 without being joined to the Au electrode 15 immediately after the wire bonding. The wire peeling on the Au electrode 15 side causes the printed circuit board 10 to be heated above the glass transition temperature Tg during wire bonding, so that the printed circuit board 10 is softened, and as a result, the electrode 15 on the printed circuit board 10 is bonded during wire bonding. On the side, it is considered that this occurs because ultrasonic waves do not work well at the joint.

【０００６】図６に示すように、ワイヤボンデイング時
の加熱温度を１５０°Ｃまで下げると、上記のＡｕ電極
１５側のワイヤ剥がれの発生が減少する。そして、本発
明者らの試作、検討によれば、加熱温度をさらに、上記
ガラス転移温度Ｔｇ以下の温度である１００〜１２０°
Ｃ程度まで下げた場合、および７５°Ｃ程度まで下げた
場合には、ボンデイング直後のワイヤ剥がれはなくなる
が、引張強度試験にて、比較的小さい強度で、不良モー
ドである「剥がれモード」（Ａｕ電極１５側からＡｕワ
イヤ１８が剥がれるモード）が発生することが判明し
た。As shown in FIG. 6, when the heating temperature during wire bonding is lowered to 150 ° C., the occurrence of wire peeling on the Au electrode 15 side is reduced. According to the trial production and examination by the present inventors, the heating temperature is 100 to 120 ° which is a temperature equal to or lower than the glass transition temperature Tg.
When the temperature is lowered to about C and to about 75 ° C., the wire peeling immediately after bonding disappears, but in the tensile strength test, the peeling mode (Au mode) (Au It was found that a mode in which the Au wire 18 peels from the electrode 15 side) occurs.

【０００７】このように、ワイヤボンデイング時の加熱
温度をガラス転移温度Ｔｇ以下に下げても、なお、十分
な接合強度が得られない結果となることが判明した。本
発明は、上述した事情に鑑みてなされたもので、ガラス
転移温度Ｔｇが１３０〜１５０°Ｃである、有機系樹脂
素材プリント基板のＡｕ電極に、Ａｕワイヤボンディン
グを行う実装方法において、Ａｕワイヤボンディングの
接合性を向上させることを目的とする。As described above, it was found that even if the heating temperature at the time of wire bonding was lowered to the glass transition temperature Tg or lower, a sufficient bonding strength could not be obtained. The present invention has been made in view of the above circumstances, and is a mounting method for performing Au wire bonding on an Au electrode of an organic resin material printed circuit board having a glass transition temperature Tg of 130 to 150 ° C. The purpose is to improve the bondability of bonding.

【０００８】[0008]

【課題を解決するための手段】本発明は上記目的を達成
するため、有機系樹脂素材プリント基板のＡｕ系電極
に、Ａｕワイヤボンディングを行う実装方法の工程に関
して、種々試作、検討する中で、有機系樹脂素材プリン
ト基板（１０）のガラス転移温度Ｔｇ（１３０〜１５０
°Ｃ）より低い加熱温度にて、Ａｕワイヤボンディング
を行い、その後に、前記プリント基板（１０）のガラス
転移温度Ｔｇと同等以上の加熱温度にてＡｕワイヤボン
ディングの接合部を加熱する加熱工程を設けることによ
り、Ａｕワイヤボンディングの接合性を向上できること
を見いだしたのである。In order to achieve the above object, the present invention provides various trial manufactures and studies on the steps of a mounting method for performing Au wire bonding on an Au-based electrode of an organic resin material printed circuit board. Glass transition temperature Tg (130-150) of organic resin material printed circuit board (10)
A heating step of performing Au wire bonding at a heating temperature lower than ° C), and then heating the bonding portion of the Au wire bonding at a heating temperature equal to or higher than the glass transition temperature Tg of the printed circuit board (10). It has been found that the provision of such an element can improve the bondability of Au wire bonding.

【０００９】すなわち、請求項１〜３記載の発明によれ
ば、ワイヤボンディング時の加熱温度を有機系樹脂素材
プリント基板（１０）のガラス転移温度Ｔｇ（１３０〜
１５０°Ｃ）より低い温度に設定して、ワイヤボンディ
ング時における基板（１０）の軟化を抑制し、超音波圧
着の作用を良好ならしめるとともに、ワイヤボンディン
グ後に、プリント基板（１０）のガラス転移温度Ｔｇ以
上の温度による加熱工程を設けることにより、接合部で
のＡｕ拡散を促進させることができものと考えられる。That is, according to the first to third aspects of the present invention, the heating temperature at the time of wire bonding is set to the glass transition temperature Tg (130 to 130) of the organic resin material printed board (10).
The temperature is set to a temperature lower than 150 ° C. to suppress the softening of the substrate (10) during wire bonding and to improve the effect of ultrasonic pressure bonding, and after the wire bonding, the glass transition temperature of the printed circuit board (10). It is considered that by providing a heating step at a temperature of Tg or higher, Au diffusion at the joint can be promoted.

【００１０】この結果、コストの安い有機系樹脂素材プ
リント基板（１０）を用いて、製品コストの低減を図り
つつ、Ａｕワイヤボンディングの接合性をも向上できる
のである。さらに、請求項２記載の発明では、前記ワイ
ヤボンディング後の加熱を１〜３時間行うことを特徴と
しており、また、請求項３記載の発明では、前記ワイヤ
ボンディング後の加熱温度を１５０°Ｃ〜１７５°Ｃの
範囲に設定しており、これら加熱条件の設定により、後
述の実験データに示すように、前記ワイヤボンディング
後の加熱をより適切に行うことができる。As a result, it is possible to improve the bondability of Au wire bonding while reducing the product cost by using the organic resin material printed board (10) which is low in cost. Furthermore, in the invention of claim 2, the heating after the wire bonding is performed for 1 to 3 hours, and in the invention of claim 3, the heating temperature after the wire bonding is 150 ° C to 150 ° C. The heating temperature is set in the range of 175 ° C., and the heating after the wire bonding can be more appropriately performed by setting these heating conditions, as shown in the experimental data described later.

【００１１】なお、上記各手段の括弧内の符号は、後述
する実施形態記載の具体的手段との対応関係を示すもの
である。The reference numerals in parentheses of the above-mentioned means indicate the correspondence with the concrete means described in the embodiments to be described later.

【００１２】[0012]

【発明の実施の形態】以下、本発明の実施形態を図に基
づいて説明する。図１は本発明方法により実装された半
導体装置の実装構造を示すもので、１０は有機系樹脂素
材プリント基板であり、具体的にはガラス不織布にエポ
キシ樹脂を含浸させたＣｕ（銅）張り積層板からなり、
一般にはガラスエポキシプリント基板と称されている。
この有機系樹脂素材プリント基板１０のガラス転移温度
Ｔｇは、１３０〜１５０°Ｃの比較的低い温度範囲にな
っている。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a mounting structure of a semiconductor device mounted by the method of the present invention. Reference numeral 10 denotes an organic resin material printed circuit board, specifically, a Cu (copper) clad laminate obtained by impregnating a glass nonwoven fabric with an epoxy resin. Made of boards,
Generally, it is called a glass epoxy printed circuit board.
The glass transition temperature Tg of the organic resin material printed board 10 is in a relatively low temperature range of 130 to 150 ° C.

【００１３】１１はプリント基板１０の表面に形成され
たＣｕ配線パターン、１２はこのＣｕ配線パターン１１
の所定領域に形成されたソルダーレジスト層で、半田の
付着を阻止するものである。１３は半導体チップで、ダ
イマウント材１４によりソルダーレジスト層１２の上に
接着されている。１５は基板１０側のワイヤボンディン
グパッド用Ａｕ電極で、本例では、Ｃｕ配線パターン１
１の表面に形成されたＮｉメッキ層１６と、このＮｉメ
ッキ層１６の上に形成されたＡｕメッキ層１７とから構
成されている。Reference numeral 11 is a Cu wiring pattern formed on the surface of the printed board 10, and 12 is this Cu wiring pattern 11.
The solder resist layer formed in a predetermined area of the above prevents the adhesion of solder. Reference numeral 13 denotes a semiconductor chip, which is bonded onto the solder resist layer 12 by a die mount material 14. Reference numeral 15 is an Au electrode for the wire bonding pad on the substrate 10 side. In this example, the Cu wiring pattern 1 is used.
It is composed of a Ni plating layer 16 formed on the surface of No. 1 and an Au plating layer 17 formed on the Ni plating layer 16.

【００１４】１８はこのワイヤボンディングパッド用Ａ
ｕ電極１５と半導体チップ１３との間を結線するＡｕワ
イヤ、１９は半導体チップ１３およびその周辺の結線部
を基板１０の上に封止するコーティング樹脂部材であ
る。次に、本実施形態における実装方法を図２に基づい
て説明する。図２のフローチャートでは、ソルダーレジ
スト層１２およびワイヤボンディングパッド用Ａｕ電極
１５が形成されている有機系樹脂素材プリント基板１０
に対して、まずダイマウント材１４の塗布工程を行う。
このダイマウント材１４の塗布は、ディスペンサ３０に
よりペースト状の樹脂素材をソルダーレジスト層１２の
上に押し出して行う。Reference numeral 18 denotes this wire bonding pad A
An Au wire connecting between the u electrode 15 and the semiconductor chip 13 is a coating resin member 19 for sealing the semiconductor chip 13 and the peripheral connecting portion on the substrate 10. Next, a mounting method according to this embodiment will be described with reference to FIG. In the flowchart of FIG. 2, the organic resin material printed board 10 on which the solder resist layer 12 and the Au electrode 15 for the wire bonding pad are formed
First, the coating process of the die mount material 14 is performed.
The die mount material 14 is applied by extruding a paste resin material onto the solder resist layer 12 with the dispenser 30.

【００１５】次に、この塗布されたダイマウント材１４
の上に半導体チップ１３をマウントした後、所定温度に
加熱して、ダイマウント材１４を硬化させる。次に、半
導体チップ１３のワイヤボンディングを行うのである
が、有機系樹脂素材プリント基板１０は、そのガラス転
移温度Ｔｇ（１３０〜１５０°Ｃ）以上の温度に加熱す
ると、前述したように、軟化するので、基板側のボンデ
ィングパッド用Ａｕ電極１５との間で、超音波併用熱圧
着方式にてワイヤボンディングを行うときに、超音波が
うまく作用しないようになる。Next, the coated die mount material 14 is applied.
After mounting the semiconductor chip 13 thereon, the die mount material 14 is cured by heating it to a predetermined temperature. Next, the semiconductor chip 13 is wire-bonded. When the organic resin material printed board 10 is heated to a temperature higher than its glass transition temperature Tg (130 to 150 ° C.), it softens as described above. Therefore, when the wire bonding is performed between the bonding pad Au electrode 15 on the substrate side and the ultrasonic thermocompression bonding method, the ultrasonic waves do not work well.

【００１６】そこで、本実施形態では、有機系樹脂素材
プリント基板１０のガラス転移温度Ｔｇ（１３０〜１５
０°Ｃ）より２０°Ｃ程度低めの温度、具体的には、１
１０〜１３０°Ｃ程度の温度に、ワイヤボンディング時
の加熱温度を設定し、この加熱温度の下で、超音波併用
熱圧着方式にてワイヤボンディングを行う。これによ
り、基板１０の軟化に起因する超音波の印加不良を回避
して、超音波圧着の効果を高めることができる。Therefore, in this embodiment, the glass transition temperature Tg (130 to 15) of the organic resin material printed board 10 is set.
20 ° C lower than 0 ° C), specifically 1
The heating temperature at the time of wire bonding is set to a temperature of about 10 to 130 ° C., and under the heating temperature, wire bonding is performed by the ultrasonic thermocompression bonding method. This makes it possible to avoid the application failure of ultrasonic waves due to the softening of the substrate 10 and enhance the effect of ultrasonic pressure bonding.

【００１７】次に、本発明独自のワイヤボンディング接
合部の加熱工程を行う。この加熱工程は、Ａｕワイヤ１
８と基板側のＡｕ電極１５とのボンディング接合部の接
合性（接合強度）の向上を図るためのもので、その加熱
条件は、以下の実験、検討に基づいて設定している。図
３は、ワイヤボンディング接合部のうち、基板側のＡｕ
電極１５とのボンディング接合部のみの、すなわち基板
側引張強度試験の結果を示すもので、その試験方法は、
ワイヤボンディング後に、Ａｕワイヤ１８を半導体チッ
プ１３側の接合部手前で切断し、この切断側端部を引張
強度測定器にて保持して、Ａｕワイヤ１８に破断が生じ
るまで引っ張り、その破断が生じたときの引張強度を測
定するものである。Next, a heating process of the wire bonding joint portion unique to the present invention is performed. This heating process is performed by Au wire 1
8 and the Au electrode 15 on the substrate side are intended to improve the bondability (bonding strength) of the bonding joint, and the heating conditions thereof are set based on the following experiments and examinations. FIG. 3 shows the Au on the substrate side of the wire bonding joint.
The results of the tensile strength test of only the bonding joint with the electrode 15, that is, the substrate side, are shown.
After the wire bonding, the Au wire 18 is cut in front of the bonding portion on the semiconductor chip 13 side, and the cut side end portion is held by a tensile strength measuring device and pulled until the Au wire 18 breaks, and the breakage occurs. The tensile strength is measured.

【００１８】図３の横軸は、ワイヤボンディング後の加
熱工程の加熱時間をとっている。この加熱工程の加熱温
度は、有機系樹脂素材プリント基板１０のガラス転移温
度Ｔｇ（１３０〜１５０°Ｃ）と同等の温度である１５
０°Ｃに設定している。なお、図３において、●はＡｕ
ワイヤ１８が基板側のＡｕ電極１５より剥がれる「剥が
れ」を示しており、この「剥がれ」の発生は接合不良を
意味する。△はＡｕワイヤ１８が基板側のＡｕ電極１５
との接合部近傍で破断するネック切れであり、○はＡｕ
ワイヤ１８が基板側のＡｕ電極１５との接合部から離れ
た部位で破断したワイヤ切れである。このネック切れ△
およびワイヤ切れ○は、接合部の損傷ではないので、接
合不良とはみなされない。The horizontal axis of FIG. 3 represents the heating time in the heating step after wire bonding. The heating temperature in this heating step is the same as the glass transition temperature Tg (130 to 150 ° C.) of the organic resin material printed board 10 15
It is set to 0 ° C. In FIG. 3, ● indicates Au.
The wire 18 shows “peeling” in which the wire 18 is peeled from the Au electrode 15 on the substrate side, and the occurrence of “peeling” means defective bonding. Δ indicates that the Au wire 18 is the Au electrode 15 on the substrate side
It is a neck break that breaks near the joint with
The wire 18 is broken at a portion apart from the bonding portion with the Au electrode 15 on the substrate side. Out of this neck △
And the wire break ◯ is not considered to be a poor joint because it does not damage the joint.

【００１９】図３の横軸の初期は、ワイヤボンディング
後の加熱を行っていないものであり、この初期のもの
（試験数ｎ＝１８）では●印の剥がれが１５も発生して
いる。そして、この剥がれ発生時の引張強度も非常に小
さな領域があり、ワイヤボンディングの接合性が不安定
である。これに対し、１５０°Ｃの加熱を０．５時間行
うと、試験数ｎ＝９において、●印の剥がれが５個に減
少するとともに、剥がれ発生時の引張強度が０．１Ｎま
で上昇しており、接合性が向上していることがわかる。In the initial stage of the horizontal axis in FIG. 3, heating after wire bonding is not performed, and in this initial stage (test number n = 18), peeling of the mark ● also occurs. Further, there is a region where the tensile strength when the peeling occurs is very small, and the bondability of wire bonding is unstable. On the other hand, when heating at 150 ° C. for 0.5 hours, the number of peeled-off marks ● decreased to 5 and the tensile strength at the time of peeling increased to 0.1 N when the number of tests n = 9. It can be seen that the bondability is improved.

【００２０】そして、１５０°Ｃの加熱を１時間〜３時
間行ったときは、●印の剥がれが０となり、良好な接合
性が得られることを確認できた。なお、本発明者らは、
ワイヤボンディング後の加熱条件について、種々検討し
た結果、前記ガラス転移温度Ｔｇ（１３０〜１５０°
Ｃ）を大きく上回る加熱温度（具体的には１７５°Ｃ以
上）にて長時間加熱すると、プリント基板１０の樹脂成
分の変色等が発生することが分かった。この樹脂成分の
変色は、プリント基板１０の長期信頼性を低下させる恐
れがある。When heating at 150 ° C. was carried out for 1 to 3 hours, the peeling of the mark ● was 0, and it was confirmed that good bondability was obtained. In addition, the present inventors
As a result of various studies on heating conditions after wire bonding, the glass transition temperature Tg (130 to 150 °)
It has been found that if the heating temperature (specifically, 175 ° C. or higher) far higher than C) is used for a long time, discoloration or the like of the resin component of the printed board 10 occurs. This discoloration of the resin component may reduce long-term reliability of the printed circuit board 10.

【００２１】従って、Ａｕワイヤボンディング後の加熱
温度は、図３に示す試験結果および上記長期信頼性の点
から、前記ガラス転移温度Ｔｇ〜１７５°Ｃ程度の範囲
に設定し、加熱時間は、１〜３時間程度が好ましい。再
び、図２に戻って、上記加熱工程終了後に、コーティン
グ樹脂部材１９の塗布工程を行う。この工程では、ディ
スペンサ３１によりペースト状の樹脂素材を半導体チッ
プ１３の周囲に押し出して塗布する。Therefore, the heating temperature after Au wire bonding is set in the range of the glass transition temperature Tg to 175 ° C. from the test results shown in FIG. 3 and the long-term reliability, and the heating time is 1 It is preferably about 3 hours. Returning to FIG. 2 again, after the heating process is completed, the coating resin member 19 is applied. In this step, the paste-shaped resin material is extruded around the semiconductor chip 13 by the dispenser 31 and applied.

【００２２】次に、コーティング樹脂部材１９の素材を
所定温度にて加熱して硬化させる。以上により、半導体
装置の実装を終了できる。 （他の実施形態）なお、上記実施形態では、Ａｕワイヤ
ボンディング後の加熱工程を独立に設定しているが、Ａ
ｕワイヤボンディング後に行われる、コーティング樹脂
部材１９の硬化工程等において、その加熱条件がＡｕワ
イヤボンディングの接合性向上の条件を満足するなら
ば、上記加熱工程を独立に設定せず、硬化工程等に上記
加熱工程の役割を兼ねさせることができる。Next, the material of the coating resin member 19 is heated and cured at a predetermined temperature. As described above, the mounting of the semiconductor device can be completed. (Other Embodiments) In the above embodiment, the heating process after Au wire bonding is set independently.
In the curing step of the coating resin member 19 performed after the u wire bonding, if the heating conditions satisfy the conditions for improving the bondability of the Au wire bonding, the above heating step is not set independently and the curing step or the like is not performed. It can also serve as the heating step.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明方法により実装した半導体装置の実装構
造を示す断面図である。FIG. 1 is a sectional view showing a mounting structure of a semiconductor device mounted by a method of the present invention.

【図２】本発明方法の一実施形態を示すフローチャート
と実装工程図である。FIG. 2 is a flowchart and a mounting process diagram showing an embodiment of the method of the present invention.

【図３】本発明方法の効果を説明するためのＡｕワイヤ
ボンディングの基板側引張強度を示すグラフである。FIG. 3 is a graph showing substrate-side tensile strength of Au wire bonding for explaining the effect of the method of the present invention.

【図４】従来の半導体装置の実装構造を示す断面図であ
る。FIG. 4 is a sectional view showing a mounting structure of a conventional semiconductor device.

【図５】従来の半導体装置の他の実装構造を示す断面図
である。FIG. 5 is a cross-sectional view showing another mounting structure of a conventional semiconductor device.

【図６】従来方法におけるＡｕワイヤボンディング時の
加熱温度と基板側ワイヤ剥がれとの関係を示すグラフで
ある。FIG. 6 is a graph showing the relationship between the heating temperature during Au wire bonding and substrate-side wire peeling in the conventional method.

【符号の説明】[Explanation of symbols]

１０…プリント基板、１３…半導体チップ（電子部
品）、１５…ワイヤボンディングパッド用Ａｕ電極、１
８…Ａｕワイヤ。Reference numeral 10 ... Printed circuit board, 13 ... Semiconductor chip (electronic component), 15 ... Au electrode for wire bonding pad, 1
8 ... Au wire.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 河西 文男 愛知県刈谷市昭和町１丁目１番地 日本 電装株式会社内 (56)参考文献 特開 平８−162487（ＪＰ，Ａ) 特開 平７−193166（ＪＰ，Ａ) 特開 平３−91938（ＪＰ，Ａ) 特開 平５−243308（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 301 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Fumio Kasai 1-1-1, Showa-cho, Kariya city, Aichi Japan Denso Co., Ltd. (56) References JP-A-8-162487 (JP, A) JP-A-7- 193166 (JP, A) JP-A-3-91938 (JP, A) JP-A-5-243308 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) H01L 21/60 301

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 ガラス転移温度Ｔｇが１３０〜１５０°
Ｃである有機系樹脂素材プリント基板（１０）を備え、 このプリント基板（１０）にワイヤボンデイングパッド
用Ａｕ電極（１５）を形成し、このＡｕ電極（１５）
と、電子部品（１３）との間をＡｕワイヤ（１８）を用
いて、超音波併用熱圧着方式によりワイヤボンディング
する実装方法において、 前記Ａｕ電極（１５）と前記Ａｕワイヤ（１８）とのワ
イヤボンディングを前記プリント基板（１０）のガラス
転移温度Ｔｇ（１３０〜１５０°Ｃ）より低い加熱温度
にて行い、 その後に、前記プリント基板（１０）のガラス転移温度
Ｔｇと同等以上の加熱温度にて前記Ａｕ電極（１５）部
の接合部を加熱することを特徴とする電子部品の実装方
法。1. A glass transition temperature Tg of 130 to 150 °.
An organic resin material printed board (10) which is C is provided, and an Au electrode (15) for wire bonding pad is formed on this printed board (10).
And an electronic component (13) using an Au wire (18) for wire bonding by an ultrasonic combined thermocompression bonding method, the wire comprising the Au electrode (15) and the Au wire (18). Bonding is performed at a heating temperature lower than the glass transition temperature Tg (130 to 150 ° C.) of the printed board (10), and then at a heating temperature equal to or higher than the glass transition temperature Tg of the printed board (10). A method for mounting an electronic component, comprising heating the joint of the Au electrode (15). 【請求項２】 前記ワイヤボンディング後の加熱を１〜
３時間行うことを特徴とする請求項１に記載の電子部品
の実装方法。2. The heating after the wire bonding is 1 to
The method of mounting an electronic component according to claim 1, wherein the mounting is performed for 3 hours. 【請求項３】 前記ワイヤボンディング後の加熱温度を
１５０°Ｃ〜１７５°Ｃの範囲に設定することを特徴と
する請求項１または２に記載の電子部品の実装方法。3. The mounting method for an electronic component according to claim 1, wherein the heating temperature after the wire bonding is set in the range of 150 ° C. to 175 ° C.
JP03993496A 1996-02-27 1996-02-27 Electronic component mounting method Expired - Fee Related JP3440677B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03993496A JP3440677B2 (en) 1996-02-27 1996-02-27 Electronic component mounting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03993496A JP3440677B2 (en) 1996-02-27 1996-02-27 Electronic component mounting method

Publications (2)

Publication Number Publication Date
JPH09232359A JPH09232359A (en) 1997-09-05
JP3440677B2 true JP3440677B2 (en) 2003-08-25

Family

ID=12566782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03993496A Expired - Fee Related JP3440677B2 (en) 1996-02-27 1996-02-27 Electronic component mounting method

Country Status (1)

Country Link
JP (1) JP3440677B2 (en)

Also Published As

Publication number Publication date
JPH09232359A (en) 1997-09-05

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